CN1796322A - Formula of a glass ceramic material and preparation method - Google Patents
Formula of a glass ceramic material and preparation method Download PDFInfo
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- CN1796322A CN1796322A CN 200410081644 CN200410081644A CN1796322A CN 1796322 A CN1796322 A CN 1796322A CN 200410081644 CN200410081644 CN 200410081644 CN 200410081644 A CN200410081644 A CN 200410081644A CN 1796322 A CN1796322 A CN 1796322A
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Abstract
The formulation and methods of glass-ceramic Substrate materials, which consisted essentially of the micro-powder SiO2 and the BSG materials containing four kinds of oxides:60-85wt% SiO2, 15-35wt% B2O3, 0.1-2.5wt % K2O, 0.1-2.5wt% Na2O, where the BSG materials occupied 55-90 wt% and SiO2 occupied 10-45wt%. According to formulation, after the chemically pure SiO2, B2O3, K2O, Na2O were ball-milled, desiccated and mixed in the platinum crucible, the mixture was heat-preserved and stirred at a temperature between about 1300 and 1550 DEG C, which made its crystallochemical reaction sufficiently. After pouring the melt-out glass in crucible into the water to quench, offspring of transparent broken glass which had been hydroball-milled is gained as the glass dust to synthesize the BSG materials. In terms of formulation the BSG material and the chemically pure SiO2 were ball-milled, blended and shaped granule finally. When reaction was carried out in a constant-temperature at 850-900 DEG C, the glass-ceramic Substrate materials were prepared as the above-indicated aspect of the invention. The capability index of the glass-ceramic substrate materials was: the dielectric constant Epsilon<4(1MHz), the dielectric losses tan delta<= 0.001(1MHz), the insulation resistivity rho>= 10<-3> omega cm, holdoff voltage Intensity E >= 5x10<7> V/m, the bending resistance intensity is not less than 200 Mpa, the thermal expansion coefficient alpha is approximately equal to 3.6x10<-6>/DEG C, the thermal conductivity k is approximately equal to 1 W/mK. The prepared glass-ceramic Substrate materials can meet the request of the medium/low temperature co-fired industrialization with many layers wirings and the microelectronics assembling techniques of modern integrated circuit techniques.
Description
Technical field
The invention belongs to the glass ceramic material technical field, particularly a kind of prescription of multi-layer wire substrate material and preparation method.
Technical background
Along with developing by leaps and bounds of semiconductor integrated circuit and modern microelectronic mounting technology, research has the multi-layered high-density wiring, high signaling rate, and the baseplate material of low-loss and high reliability more and more is subjected to everybody attention.Low-k low-temperature co-fired glass ceramic baseplate material becomes the research focus in the baseplate material owing to have low-k, low temperature co-fired characteristics.
A kind of baseplate material will satisfy modern integrated circuits technology and microelectronic mounting technology industrialization demands, generally need have following characteristic:
One), has lower specific inductivity
Along with the integrated level and the arithmetic speed of semiconductor integrated circuit improves constantly, how to shorten electrical signal time of lag on the interconnection line (conduction band) in unicircuit, become the key issue of further raising circuit working speed.If establishing the time of lag of electrical signal on interconnection line is T
Pd, T then
PdWith DIELECTRIC CONSTANT, the light velocity C of baseplate material following relation is arranged;
As seen, the baseplate material specific inductivity is big more, and electrical signal is also big more the time of lag on interconnection line.The problem of the time of lag on the interconnection line (conduction band) has in fact also just become how to reduce the problem of baseplate material specific inductivity size how to shorten electrical signal in unicircuit.
Two), has the characteristic of burning altogether with the conduction band slurry
The firing temperature lower (＜1000 ℃) of the high conductivity conduction band slurry of high-density multi-layered wiring usefulness (as Cu, Ag, Au, Pd-Ag etc.) is so the firing temperature of substrate can not be higher than 1000 ℃, so that can be with conduction band and substrate once-firing.
Three), has the thermal expansivity that is complementary with silicon single crystal
Because in the semiconductor integrated circuit, the raising of chip integration, the increase of chip area, the thermal expansivity that requires its substrate as far as possible with silicon single crystal (α=2.33 * 10
-6/ ℃) be complementary.
Four), lower dielectric loss, its dielectric loss tan δ generally should be less than 2.5 * 10
-3(1MHz)
Five), higher insulation resistivity, its insulation resistivity ρ generally should be greater than 10
13Ω cm
Six), higher compressive strength, its compressive strength generally should be greater than 5 * 10
7V/m
Seven), higher folding strength, its folding strength generally should be greater than 150Mpa
Eight), higher heat conductivity
At present, low-k, sintering temperature and low baseplate material commonly used both at home and abroad mainly contain following type: a) crystallized glass system: it is low that this class material has a firing temperature, specific inductivity is little, insulation resistance is than characteristics such as height, but because in sintering process, the easy softening transform of glass causes pattern precision to descend, thereby inapplicable on the very little fine rule technology of conduction band width; B) the compound system of glass: be characterized in (mostly being BSG with the lower stupalith of dielectric coefficient and the glass of suitable proportion, be the abbreviation of pyrex-" Boro Silicate Glass ") mix as baseplate material, its weak point need to be sintering under high temperature (＞1300 ℃) earlier, after obtaining the pottery of low-k, the powder that again it is ground into fine grain size mixes the back preparation with glass powder; C) non-glass system: as BaSnB
2O
6System.
No matter baseplate material is taked the sort of type, wants well to be used in modern integrated circuits technology and microelectronic mounting technology, all should satisfy aforementioned eight performance requriementss.
Summary of the invention
The present invention is mainly by BSG crystallized glass and SiO
2Form the glass-ceramic structured material, thereby be met the baseplate material of stating eight performance requriementss.
Detailed technology scheme of the present invention is:
A kind of glass ceramic material is by BSG material and SiO
2Form, filling a prescription is: BSG material 55-90wt%, SiO
210-45wt%; Wherein, described BSG material is by SiO
2, B
2O
3, K
2O, Na
2O forms, and filling a prescription is: SiO
260～85wt%, B
2O
315～35wt%, K
2O0.1～2.5wt%, Na
2O 0.1～2.5wt%.
A kind of preparation method of glass ceramic material is characterized in that following preparation steps:
(1) takes by weighing chemical pure SiO by the BSG prescription
2, B
2O
3, K
2O, Na
2O is through stand-by behind 4～12 hours ball millings, drying and the batch mixing;
(2) material that will prepare places platinum crucible, 1300～1550 ℃ of insulations 1～4 hour, stirs in insulating process, makes it finish sufficient crystallization;
(3) pour the melten glass in the crucible into quenching-in water, obtain transparent glass cullet body;
(4) the transparent glass cullet body of gained obtains the glass powder that median size is 0.5～1.5 μ m through wet ball grinding, promptly gets BSG material of the present invention;
(5) in the BSG of 55-90wt% material, add the chemical pure SiO of 10～45wt%
2, through ball milling, batch mixing and granulation, be incubated 1-4 hour down at 850～900 ℃, promptly get glass ceramic material of the present invention.
Glass ceramic material according to claim 1 is characterized in that, the performance index of described glass ceramic material are: under the operating frequency of 1MHz, and DIELECTRIC CONSTANT＜4, dielectric loss tan δ≤10
-3Insulation resistivity ρ 〉=10
13Ω cm, compressive strength E 〉=5 * 10
7V/m, folding strength 〉=200Mpa, thermalexpansioncoefficient ≈ 3.6 * 10
-6/ ℃, thermal conductivity k ≈ 1W/mK.
Some explanation about technical solution of the present invention:
(1) the BSG component is to the influence of baseplate material
Glass ceramic material is the three-dimensional compound system of a kind of stupalith in the crystallized glass base-material.The present invention adopts silicon oxide and crystallized glass base-material compound, regulates the material coefficient of thermal expansion coefficient with oxide compound, takes to regulate when temperature raises the viscosity of glass simultaneously, thereby reaches the purpose of its physical strength of raising.
A. the relation of glass and baseplate material specific inductivity
We know that each phase-splitting specific inductivity of the specific inductivity of substrate and baseplate material has following relation to exist:
lnε＝X
1lnε
1+X
2lnε
2+…+X
ilnε
i
ε in the formula
i, X
iBe respectively the specific inductivity and the volume content of i component in the material.Therefore, reduce the specific inductivity of substrate, at first must reduce the specific inductivity of glass, the specific inductivity of glass depends on the composition polarization type of glass again: electron displacement polarization, ion displacement polarization, oriented polarization etc.The silica structure is in the silicate glass: the silicon-oxy tetrahedron structure, because of symmetrical configuration, it is little to polarize.And some glass that contain heavy metal ion (as contain Pb
2+, Ba
2+) structure is asymmetric between its metal and the oxygen, it is bigger to polarize.Thereby the high glass specific inductivity of heavy metal content is big, and the high glass specific inductivity of silica content is little.Do not contain heavy metal ion in the ancient technical solution of the present invention, dioxide-containing silica is higher.
B. the relation of glass and substrate sintering temperature
The different glass of forming, its softening temperature difference, thereby the sintering temperature of substrate is also different.When the design glass formula, preferably make the softening temperature of glass, can play the effect of adjusting the baseplate material firing temperature.
Technical solution of the present invention has been selected BSG-SiO for use
2Compound system.In this system,, affect the specific inductivity of substrate equally as the silicon oxide of filled media.Packing material can make the surface active of material increase through activation treatment, so not only can improve the solid phase mass transfer of sintering process, has also increased the solubleness of filled media in glass simultaneously, reaches the purpose that has reduced sintering temperature.
(2) SiO
2Influence to the substrate physical strength
Generally speaking, the bending strength of glass is about 100Mpa, but as baseplate material, the bending strength that requires to reach should be greater than 150MPa.Be to utilize SiO in this research
2The compound folding strength that improves of crystalline phase.
In material system, the principal element that influences intensity is a pyrex.Pyrex is heated to about 1350 ℃, the SiO in the glass
2Form with cristobalite, tridymite exists, and the existence of tridymite and cristobalite is favourable to the folding strength that improves glass, and slowly cooling will form quartz again, and this will influence the folding strength of glass.Thereby we adopt the method that fused glass chilling is quenched to avoid the formation of quartzy crystalline phase, keep cristobalite, tridymite crystalline phase as far as possible, thereby have improved folding strength.
Control pyrex powder and SiO
2The comparison intensity of the particle size of powder is also influential.As glass powder diameter dimension and SiO
2When size was close, the Partial Liquid Phase that glass forms in sintering process can not be wrapped up SiO fully
2Powder, thus stay the space, reduced intensity.When the glass powder diameter much smaller than SiO
2During the powder diameter, fused glass can wrap up SiO preferably
2Powder granule, thus make the sintered compact densification, and intensity increases.
(3) SiO
2Influence to substrate machine thermal expansivity
The thermal expansivity of stupalith is relevant with the thermal expansivity of each component, make pottery approaching with the thermal expansivity of silicon, can finish by the ratio of taking to adjust each component.
We know that following relation is arranged between the thermal expansivity of stupalith and the thermal expansivity of each component:
α
r＝[α
1ρ
1K
1/d
1+α
2ρ
2K
2/d
2]/[ρ
1K
1/d
1+ρ
2K
2/d
2]
In the formula: α
rBe system mean thermal expansion coefficients, α
iBe the coefficient of expansion of i component, ρ
iBe the weight percent of i component, d
iBe the density of i component, K
iIt is the phantom amount of i component.In this compound system, the thermalexpansioncoefficient of BSG
1=3.1 * 10
-6/ ℃, weight percent ρ
1=70wt%, density d
1=2.13g/cm
3, phantom amount K
1=3.0 * 104Mpa; SiO
2Thermalexpansioncoefficient
2=0.72 * 10
-6/ ℃, weight percent ρ
2=30wt%, density d
2=2.18g/cm
3, phantom amount K
2=3.6 * 10
4MPa.Can calculate thermalexpansioncoefficient=2.29 * 10 of compound system by following formula
-6/ ℃, the actual thermal expansivity that records is 3.6 * 10
-6/ ℃.
(4) SiO
2Content is to the influence of substrate dielectric constant and loss tangent
By discovering, along with SiO in the system
2The difference of adding proportion, its DIELECTRIC CONSTANT, dielectric loss tan δ can change.With SiO
2The increase of adding proportion, specific inductivity and loss tangent reduce.
In addition, need to prove below also having:
1. (that the present invention adopts is K to add micro-basic metal in the technical scheme in the BSG material prescription
2O and Na
2O) purpose is, guarantees that the BSG material has lower specific inductivity on the one hand, and main is to guarantee that the BSG material has lower softening temperature, makes final baseplate material burning till below 900 ℃.Because the firing temperature of baseplate material is complementary with the firing temperature of the conduction band slurry of using always (as Cu, Ag, Au, Pd-Ag etc.), so that can be with conduction band and substrate once-firing.Alkali-metal concrete content is unimportant in the BSG material, as long as satisfy " trace ", and below 2.5% of general position BSG material.
2. in the insulating process of preparation BSG crystallized glass, the purpose that stirs is to make the BSG crystallization more abundant; Stirring fully can make the soaking time of BSG crystallized glass suitably shorten.
Embodiment
Following each embodiment just carries out according to following 5 steps, makes the glass ceramic material of different ingredients ratio.
1. use analytically pure SiO
2, B
2O
3, K
2O, Na
2O puts into the agate jar respectively as raw material, adds an amount of agate ball, and ball milling is 24～72 hours on planetary ball mill, and is standby;
2. press the good raw material of ball milling in the accurate weighing of the BSG material prescription step 1, the material for preparing is placed platinum crucible,, in insulating process, stir, make it finish sufficient crystallization 1300～1550 ℃ of insulations 1～4 hour;
3. pour the melten glass in the crucible into quenching-in water, obtain transparent glass cullet body;
4. the transparent glass cullet body of gained obtains the glass powder that median size is 0.5～1.5 μ m through wet ball grinding, is BSG material of the present invention;
5. add the chemical pure SiO of 10～45wt% at the BSG of 55-90wt% material
2, through 4～16 hours ball millings, batch mixing and granulation, be incubated 1-4 hour down at 850～900 ℃, promptly get glass ceramic material of the present invention.
Embodiment one
SiO in the BSG material
2, B
2O
3, K
2O, Na
2Each component concentration of O is: SiO
262wt%, B
2O
334wt%, K
2O 2wt%, Na
2O 2wt%; Final baseplate material BSG and SiO
2Each component concentration is: BSG55wt%, SiO
245wt%.
By above-mentioned formula rate, and the glass ceramic material that makes by aforementioned preparation process, every performance index are: under the operating frequency of 1MHz, and DIELECTRIC CONSTANT＜3.8, dielectric loss tan δ＜2.5 * 10
-3Insulation resistivity ρ 〉=1.3 * 10
13Ω cm, compressive strength E 〉=7 * 10
7V/m, folding strength 〉=200Mpa, thermalexpansioncoefficient ≈ 3.6 * 10
-6/ ℃, thermal conductivity k 〉=1W/mK.
Embodiment two
SiO in the BSG material
2, B
2O
3, K
2O, Na
2Each component concentration of O is: SiO
262wt%, B
2O
334wt%, K
2O 2wt%, Na
2O 2wt%; Final baseplate material BSG and SiO
2Each component concentration is: BSG70wt%, SiO
230wt%.
By above-mentioned formula rate, and the glass ceramic material that makes by aforementioned preparation process, every performance index are: under the operating frequency of 1MHz, and DIELECTRIC CONSTANT＜3.8, dielectric loss tan δ＜2.5 * 10
-3Insulation resistivity ρ 〉=1.6 * 10
13Ω cm, compressive strength E 〉=7 * 10
7V/m, folding strength 〉=200Mpa, thermalexpansioncoefficient ≈ 3.6 * 10
-6/ ℃, thermal conductivity k 〉=1W/mK.
Embodiment three
SiO in the BSG material
2, B
2O
3, K
2O, Na
2Each component concentration of O is: SiO
262wt%, B
2O
334wt%, K
2O 2wt%, Na
2O 2wt%; Final baseplate material BSG and SiO
2Each component concentration is: BSG90wt%, SiO
210wt%.
By above-mentioned formula rate, and the glass ceramic material that makes by aforementioned preparation process, every performance index are: under the operating frequency of 1MHz, and DIELECTRIC CONSTANT＜3.8, dielectric loss tan δ＜2.5 * 10
-3Insulation resistivity ρ 〉=1.8 * 10
13Ω cm, compressive strength E 〉=7 * 10
7V/m, folding strength 〉=200Mpa, thermalexpansioncoefficient ≈ 3.6 * 10
-6/ ℃, thermal conductivity k 〉=1W/mK.
Embodiment four
SiO in the BSG material
2, B
2O
3, K
2O, Na
2Each component concentration of O is: SiO
272wt%, B
2O
324wt%, K
2O 2wt%, Na
2O 2wt%; Final baseplate material BSG and SiO
2Each component concentration is: BSG55wt%, SiO
245wt%.
By above-mentioned formula rate, and the glass ceramic material that makes by aforementioned preparation process, every performance index are: under the operating frequency of 1MHz, and DIELECTRIC CONSTANT＜3.6, dielectric loss tan δ＜2.3 * 10
-3Insulation resistivity ρ 〉=1.3 * 10
13Ω cm, compressive strength E 〉=7 * 10
7V/m, folding strength 〉=200Mpa, thermalexpansioncoefficient ≈ 3.6 * 10
-6/ ℃, thermal conductivity k 〉=1W/mK.
Embodiment five
SiO in the BSG material
2, B
2O
3, K
2O, Na
2Each component concentration of O is: SiO
272wt%, B
2O
324wt%, K
2O 2wt%, Na
2O 2wt%; Final baseplate material BSG and SiO
2Each component concentration is: BSG70wt%, SiO
230wt%.
By above-mentioned formula rate, and the glass ceramic material that makes by aforementioned preparation process, every performance index are: under the operating frequency of 1MHz, and DIELECTRIC CONSTANT＜3.6, dielectric loss tan δ＜2.3 * 10
-3Insulation resistivity ρ 〉=1.6 * 10
13Ω cm, compressive strength E 〉=7 * 10
7V/m, folding strength 〉=200Mpa, thermalexpansioncoefficient ≈ 3.6 * 10
-6/ ℃, thermal conductivity k 〉=1W/mK.
Embodiment six
SiO in the BSG material
2, B
2O
3, K
2O, Na
2Each component concentration of O is: SiO
272wt%, B
2O
324wt%, K
2O 2wt%, Na
2O 2wt%; Final baseplate material BSG and SiO
2Each component concentration is: BSG90wt%, SiO
210wt%.
By above-mentioned formula rate, and the glass ceramic material that makes by aforementioned preparation process, every performance index are: under the operating frequency of 1MHz, and DIELECTRIC CONSTANT＜3.6, dielectric loss tan δ＜2.3 * 10
-3Insulation resistivity ρ 〉=1.8 * 10
13Ω cm, compressive strength E 〉=7 * 10
7V/m, folding strength 〉=200Mpa, thermalexpansioncoefficient ≈ 3.6 * 10
-6/ ℃, thermal conductivity k 〉=1W/mK.
Embodiment seven
SiO in the BSG material
2, B
2O
3, K
2O, Na
2Each component concentration of O is: SiO
283wt%, B
2O
313wt%, K
2O 2wt%, Na
2O 2wt%; Final baseplate material BSG and SiO
2Each component concentration is: BSG55wt%, SiO
245wt%.
By above-mentioned formula rate, and the glass ceramic material that makes by aforementioned preparation process, every performance index are: under the operating frequency of 1MHz, and DIELECTRIC CONSTANT＜3.5, dielectric loss tan δ＜2.2 * 10
-3Insulation resistivity ρ 〉=1.3 * 10
13Ω cm, compressive strength E 〉=7 * 10
7V/m, folding strength 〉=200Mpa, thermalexpansioncoefficient ≈ 3.6 * 10
-6/ ℃, thermal conductivity k 〉=1W/mK.
Embodiment eight
SiO in the BSG material
2, B
2O
3, K
2O, Na
2Each component concentration of O is: SiO
283wt%, B
2O
313wt%, K
2O 2wt%, Na
2O 2wt%; Final baseplate material BSG and SiO
2Each component concentration is: BSG70wt%, SiO
230wt%.
By above-mentioned formula rate, and the glass ceramic material that makes by aforementioned preparation process, every performance index are: under the operating frequency of 1MHz, and DIELECTRIC CONSTANT＜3.5, dielectric loss tan δ＜2.2 * 10
-3Insulation resistivity ρ 〉=1.6 * 10
13Ω cm, compressive strength E 〉=7 * 10
7V/m, folding strength 〉=200Mpa, thermalexpansioncoefficient ≈ 3.6 * 10
-6/ ℃, thermal conductivity k 〉=1W/mK.
Embodiment nine
SiO in the BSG material
2, B
2O
3, K
2O, Na
2Each component concentration of O is: SiO
283wt%, B
2O
313wt%, K
2O 2wt%, Na
2O 2wt%; Final baseplate material BSG and SiO
2Each component concentration is: BSG90wt%, SiO
210wt%.
By above-mentioned formula rate, and the glass ceramic material that makes by aforementioned preparation process, every performance index are: under the operating frequency of 1MHz, and DIELECTRIC CONSTANT＜3.5, dielectric loss tan δ＜2.2 * 10
-3Insulation resistivity ρ 〉=1.8 * 10
13Ω cm, compressive strength E 〉=7 * 10
7V/m, folding strength 〉=200Mpa, thermalexpansioncoefficient ≈ 3.6 * 10
-6/ ℃, thermal conductivity k 〉=1W/mK.
Claims (4)
1, a kind of glass ceramic material is characterized in that by BSG material and SiO
2Form, filling a prescription is: BSG material 55-90wt%, SiO
210-45wt%.
2, glass ceramic material according to claim 1 is characterized in that, described BSG material is by SiO
2, B
2O
3, K
2O, Na
2O forms, and filling a prescription is: SiO
260～85wt%, B
2O
315～35wt%, K
2O 0.1～2.5wt%, Na
2O 0.1～2.5wt%.
3, glass ceramic material according to claim 1 is characterized in that, the performance index of described glass ceramic material are: under the operating frequency of 1MHz, and DIELECTRIC CONSTANT＜4, dielectric loss tan δ≤10
-3Insulation resistivity ρ 〉=10
13Ω cm, compressive strength E 〉=5 * 10
7V/m, folding strength 〉=200Mpa, thermalexpansioncoefficient ≈ 3.6 * 10
-6/ ℃, thermal conductivity k ≈ 1W/mK.
4, a kind of preparation method of glass ceramic material is characterized in that following preparation steps:
(1) takes by weighing chemical pure SiO by the BSG prescription
2, B
2O
3, K
2O, Na
2O is through stand-by behind 4～12 hours ball millings, drying and the batch mixing;
(2) material that will prepare places platinum crucible, 1300～1550 ℃ of insulations 1～4 hour, stirs in insulating process, makes it finish sufficient crystallization;
(3) pour the melten glass in the crucible into quenching-in water, obtain transparent glass cullet body;
(4) the transparent glass cullet body of gained obtains the glass powder that median size is 0.5～1.5 μ m through wet ball grinding, promptly gets BSG material of the present invention;
(5) add the chemical pure SiO of 10～45wt% at the BSG of 55-90wt% material
2, through ball milling, batch mixing and granulation, be incubated 1-4 hour down at 850～900 ℃, promptly get glass ceramic material of the present invention.
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|---|---|---|---|
| CNB2004100816444A CN100445226C (en) | 2004-12-30 | 2004-12-30 | Formula of a glass ceramic material and preparation method |
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|---|---|---|---|
| CNB2004100816444A CN100445226C (en) | 2004-12-30 | 2004-12-30 | Formula of a glass ceramic material and preparation method |
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| CN100445226C CN100445226C (en) | 2008-12-24 |
Family
ID=36817663
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Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19739242A1 (en) * | 1997-09-08 | 1999-03-11 | Fraunhofer Ges Forschung | Use of crystallizable glass compositions as sealing material for sheathed cables |
-
2004
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| CN102898027A (en) * | 2012-10-17 | 2013-01-30 | 电子科技大学 | Ceramic powder for electronic component packaging material and production method for ceramic powder |
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| CN108996902A (en) * | 2018-09-19 | 2018-12-14 | 深圳市晶特智造科技有限公司 | A kind of low-temperature co-burning ceramic material and preparation method thereof |
| CN110933202A (en) * | 2018-09-19 | 2020-03-27 | 苹果公司 | Ceramic substrate with glass filler for decoration and housing material |
| CN108996902B (en) * | 2018-09-19 | 2021-10-26 | 深圳市晶特智造科技有限公司 | Low-temperature co-fired ceramic material and preparation method thereof |
| CN110933202B (en) * | 2018-09-19 | 2023-03-10 | 苹果公司 | Ceramic substrate with glass filler for decoration and housing material |
| US11667585B2 (en) | 2018-09-19 | 2023-06-06 | Apple, Inc. | Ceramic substrate with glass fill for decoration and housing materials |
| CN110256060A (en) * | 2019-07-09 | 2019-09-20 | 嘉兴佳利电子有限公司 | A kind of high frequency low-k low-temperature co-burning ceramic material and preparation method |
| CN110256060B (en) * | 2019-07-09 | 2021-10-08 | 嘉兴佳利电子有限公司 | High-frequency low-dielectric-constant low-temperature co-fired ceramic material and preparation method thereof |
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