CN1792475A - Dry cleaning apparatus used to manufacture semiconductor devices - Google Patents
Dry cleaning apparatus used to manufacture semiconductor devices Download PDFInfo
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- CN1792475A CN1792475A CNA2005101203678A CN200510120367A CN1792475A CN 1792475 A CN1792475 A CN 1792475A CN A2005101203678 A CNA2005101203678 A CN A2005101203678A CN 200510120367 A CN200510120367 A CN 200510120367A CN 1792475 A CN1792475 A CN 1792475A
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- 238000005108 dry cleaning Methods 0.000 title claims abstract description 71
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000012159 carrier gas Substances 0.000 claims abstract description 85
- 239000002245 particle Substances 0.000 claims abstract description 48
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- 239000007789 gas Substances 0.000 claims description 92
- 238000005516 engineering process Methods 0.000 claims description 37
- 238000000746 purification Methods 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
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- 238000010926 purge Methods 0.000 claims description 8
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- 238000004140 cleaning Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 12
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/356—Working by laser beam, e.g. welding, cutting or boring for surface treatment by shock processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A dry cleaning apparatus for cleaning a surface of a semiconductor substrate comprises a chamber comprising a first wall and a second wall, a supporting member including a wafer receiving surface, a cleaning member for removing particles from the surface of the substrate placed on the supporting member, and a carrier gas supplying member for supplying a carrier gas and for transporting the particles separated from the surface of the substrate to the outside of the chamber, wherein the first wall of the chamber including a first portion disposed to face the wafer receiving surface and a second portion formed adjacent to the first portion and disposed to receive a part of the carrier gas supplying member.
Description
Technical field
The disclosure relates to a kind of device that is used for producing the semiconductor devices, and more specifically, relates to a kind of dry cleaning apparatus that is used to purify the surface of semiconductor wafer.
Background technology
The process for purifying that is used for semiconductor wafer surface is removed residual chemical, granule and the pollutant of the common generation of institute when integrated circuit is formed on the semiconductor wafer.Use the wet purification method of chemical solvent can be used to purify wafer.Thereby the wet purification method for example comprise by chemical reaction etching on the wafer or peel off pollutant chemical treatment technology, use deionization (DI) water to clean the cleaning of wafer of chemical treatment and the drying process of the wafer after dry the cleaning.
Conventional wet purification method causes the watermark that produces usually on wafer when drying process is poorly carried out.In the wet purification of routine consuming time, employed chemicals may contaminated environment.
Fig. 1 has shown conventional dry cleaning apparatus 9.Dry cleaning apparatus 9 comprises and is arranged at the gripper shoe 920 that is used for supporting wafers W in the chamber 900.Purify the member (not shown) and be arranged in the chamber 900, to be used for surface removal foreign substance, such as particle from wafer W.Purifying member can be for being used for that high pressure nitrogen is expelled to the nozzle of wafer W or being used for producing the laser instrument of shock wave above wafer surface.
Fig. 3 has shown particle P1 and the P2 that attaches to wafer W before process for purifying and afterwards.Particle P1 by the dotted line representative is the particle that attached to wafer W before process for purifying.Particle P2 by the solid line representative is the particle that attaches to wafer W after process for purifying.
Summary of the invention
One exemplary embodiment of the present invention discloses a kind of minimizing from the dry cleaning apparatus that sticks once more of the particle of wafer removal.
In one exemplary embodiment of the present invention, the dry cleaning apparatus that is used to purify the surface of Semiconductor substrate comprises: the chamber comprises the first wall and second wall; Supporting member comprises the wafer receiving surface; Purify member, be used for from being placed on the surface removal particle of the substrate on the supporting member; With the carrier gas supply member, the particle that is used to supply with carrier gas and will separates from the surface of substrate is transferred to the outside of chamber, and wherein first wall comprises and is provided with in the face of the first of wafer receiving surface and adjacent formation with first and is provided with the second portion of the carrier gas supply member of receiving unit.
In another one exemplary embodiment of the present invention, the dry cleaning apparatus that is used to purify the surface of Semiconductor substrate comprises the chamber, described chamber has the gas that is used to receive carrier gas and flows into part, flows into part from gas and extend and be used for extending and being used for that carrier gas is transferred to outdoor gas from the technology operating part of the surface removal particle that is placed on the substrate on the supporting member with from the technology operating part flowing out part, and the area of section of technology operating part flows into the area of section of part less than gas.
In another embodiment of the present invention, the dry cleaning apparatus that is used to purify the surface of Semiconductor substrate comprises: the chamber; The supporting member that is used for the vertical placement of supporting wafers; Be used for from the purification member of the surface removal particle that is placed on the wafer on the supporting member; With the carrier gas supply member that is used for carrier gas is supplied to the chamber.
Description of drawings
In conjunction with the accompanying drawings, from following description, can understand the preferred embodiments of the present invention in further detail.
Fig. 1 has shown conventional dry cleaning apparatus.
Fig. 2 has shown that the particle that takes place shown in Figure 1 absorbs once more on wafer.
Fig. 3 has shown when using device shown in Figure 1 before carrying out clean technology and the particle on wafer surface afterwards.
Fig. 4 is the cross-sectional view of dry cleaning apparatus according to an embodiment of the invention.
Fig. 5 is the cross-sectional view of dry cleaning apparatus according to another embodiment of the present invention.
Fig. 6 is the cross-sectional view of dry cleaning apparatus according to still another embodiment of the invention.
Fig. 7 has shown the direction and the speed of air-flow and foreign substance flow path in the chamber of dry cleaning apparatus shown in Figure 4.
Fig. 8 is according to the cross-sectional view of the dry cleaning apparatus of an embodiment more of the present invention.
Fig. 9 has shown the process of removing foreign substance from wafer surface.
Figure 10 is according to the cross-sectional view of the dry cleaning apparatus of an embodiment more of the present invention.
Figure 11 is according to the cross-sectional view of the dry cleaning apparatus of an embodiment more of the present invention.
Figure 12 is according to the cross-sectional view of the dry cleaning apparatus of an embodiment more of the present invention.
Figure 13 is the cross-sectional view of internal configurations that shows the chamber of dry cleaning apparatus shown in Figure 12.
Figure 14 has shown the airflow direction of carrier gas in the chamber and from the flow path of the foreign particle of wafer-separate.
Figure 15 is according to the cross-sectional view of the dry cleaning apparatus of an embodiment more of the present invention.
Figure 16 is according to the cross-sectional view of the dry cleaning apparatus of an embodiment more of the present invention.
Figure 17 is according to the cross-sectional view of the dry cleaning apparatus of an embodiment more of the present invention.
Figure 18 has shown the direction and the speed of air-flow and foreign substance flow path in the chamber of dry cleaning apparatus.
Figure 19 is according to the cross-sectional view of the dry cleaning apparatus of an embodiment more of the present invention.
Figure 20 is according to the cross-sectional view of the dry cleaning apparatus of an embodiment more of the present invention.
Figure 21 is the perspective view of supporting member according to an embodiment of the invention.
Figure 22 is the side view of supporting member shown in Figure 21.
Figure 23 is the perspective view that comprises the semiconductor manufacturing facility of a plurality of purifiers.
The specific embodiment
Will be with reference to the accompanying drawings in following detailed description the preferred embodiments of the present invention.The present invention can realize and should not be construed as being limited to the embodiment of explaination here with many different forms.
Fig. 4 has shown dry cleaning apparatus 1 according to an embodiment of the invention.This dry cleaning apparatus 1 comprises chamber 100, supporting member 200, purifies member 300 and carrier gas supply member 400.In chamber 100, carried out clean technology.Wafer W is arranged on the supporting member 200 in the chamber 100.Purifying member 300 is used for from the surface removal of the wafer W pollutant such as particle P, residue or foreign substance.Be discharged to the outside of chamber 100 by the carrier gas of supplying with from carrier gas supply member 400 from the particle P of the surface isolation of wafer W.
Supporting member 200 is arranged at or near the center of chamber 100, and comprises the drive member 240 that is used to hold the gripper shoe 220 of wafer W and is used to rotate and/or promote gripper shoe 220.Gripper shoe 220 comprises plane surface and for toroidal.Gripper shoe 220 for example utilizes vacuum suction or mechanical grip to fix wafer W.Perhaps, gripper shoe 220 is utilized electrostatic force fixed wafer W.
Carrier gas supply member 400 is arranged at a sidewall of chamber 100.Exhaust component 500 is arranged at another sidewall of chamber 100.In an exemplary embodiment, carrier gas supply member 400 can be for comprising for example fan filter element of fan 420 and filter 440.Utilize fan 420, carrier gas is supplied to the chamber 100 from the outside.The carrier gas of being supplied with is filtered device 440 and filters.In chamber 100, carrier gas along the top surface of wafer W from an effluent to opposite side.That is carrier gas bottom horizontal flow sheet in chamber 100.Carrier gas can be dry air, nitrogen, inert gas or dry ice.
A plurality of injection orifices 302 are formed at purification member 300 and separate at regular intervals.Purify the madial wall that member 300 is arranged at chamber 100 securely, and drive member 240 upwards promotes gripper shoe 220 near purifying nozzle 300.Drive member 240 can comprise for example cylinder or motor (not shown).According to embodiments of the invention, gripper shoe 220 can be fixed, and purification member 300 can move at the carrier gas flow direction.
According to embodiments of the invention, purifying member can be laser member 300 ' shown in Figure 5.Laser member 300 ' produces the particle P that shock wave removes the surface that attaches to wafer W with bombardment with laser beams to the surface of wafer W.Perhaps, laser member 300 ' can be directly removes particle P with bombardment with laser beams to the surface of wafer W.When directly being radiated laser beam on the wafer W, drive member 240 upwards promotes supporting member 220 and rotation gripper shoe 220.
With reference to figure 5, chamber 100 comprises that gas flows into part 124, technology operating part 122 and gas and flows out part 126.Technology operating part 122 is arranged at or near the center of chamber 100, is provided with supporting member 220 there.Gas inflow part 124 is the spaces between the sidewall of technology operating part 122 and chamber 100, is provided with gas supply member 400 there.Gas flows out the space between the sidewall that part 126 is technology operating part 122 and chamber 100, is provided with exhaust component 500 there.According to embodiments of the invention, carrier gas flows into part 124 from gas and flows to technology operating part 122, flows to gas again and flows out part 126.
Particle P from the surface isolation of wafer W is transmitted to exhaust component 500 by carrier gas by purification member 300.Floating particle P is subjected to influence by the horizontal force of the mobile generation of carrier gas with by the vertical force that gravity produces.
If horizontal force is not enough to overcome gravity, foreign substance P may fall on the wafer before the surface of the wafer W of escaping fully.Can improve the flow velocity of carrier gas by the speed that increases fan, it may cause the generation of eddy current.Eddy current may increase power consumption.
According to embodiments of the invention, the shape that forms chamber 100 improves the flow velocity of the carrier gas on the wafer W.For example, the area of section (aisle spare) that forms the passage of gas to have different shapes in gas inflow part 124, technology operating part 122 and gas outflow part 126.As the result of the different shape of each part, can change the flow velocity of carrier gas.
According to Bernoulli theory (Bernoulli ' s Theorem), the area of section of the passage of flow rate of fluid and fluid is inversely proportional to.For example, if reduced the aisle spare of fluid, then flow rate of fluid increases.According to embodiments of the invention, the aisle spare of technology operating part 122 flows into the aisle spare of part 124 less than gas.If sharply or suddenly reduce aisle spare, can produce vortex in the zone that reduces aisle spare so.Flow into the zone of part 124 at the gas adjacent with technology operating part 122, aisle spare reduces to minimize the generation of vortex in a scope.
According to embodiments of the invention, gas flows out the aisle spare of the aisle spare of part 126 greater than technology operating part 122.The passage of gas upwards is broadened, and allows to pass through the carrier gas of technology operating part 122 in level or upwards mobile.Like this, the flow direction of carrier gas forms away from wafer W, thereby can prevent that particle P floating above wafer W from attaching to wafer W again.The aisle spare that gas flows out part 126 can sharply or little by little increase.Perhaps, the aisle spare of gas inflow part 126 can be equal to or less than the aisle spare of technology operating part 122, as shown in Figure 6.
Turn back to Fig. 4, upper wall 140 comprises the first 142 that is arranged at PROCESS FOR TREATMENT part 122 tops, be arranged at gas flows into the second portion 144 of part 124 tops and is arranged at the third part 146 that gas flows out part 126 tops.First 142 is lower than second portion 144 and third part 146.First 142 is horizontally disposed with.Second portion 144 comprises: horizontal component 144a is horizontally placed on the zone adjacent to carrier gas supply member 400; Sloping portion 144b is arranged between first 142 and the horizontal component 144a.Form sloping portion 144b to wafer W downwards.Third part 146 comprises: horizontal component 146a is horizontally placed on the zone adjacent to exhaust component 500; Sloping portion 146b is arranged between first 142 and the horizontal component 146a.Upwards leave wafer W and form sloping portion 146b.
Fig. 7 has shown the direction of the air-flow that is produced by carrier gas in the different piece of chamber 100.Fig. 7 has also shown the speed of the air-flow of the various piece in chamber 100.Fig. 7 has also shown from the flow path of the particle P of wafer W separation.In Fig. 7, the velocity magnitude of the Length Indication air-flow of arrow.
With reference to figure 7, utilize carrier gas supply member 400, make carrier gas flow into part 124 with predetermined speed inflow gas.Carrier gas is accelerated when the sloping portion 144b by upper wall 140.When by technology operating part 122, flow with constant speed above the top surface of carrier gas in wafer W.Then, carrier gas is flowed out part 126 and is discharged to the outside through exhaust component 500 by gas.When carrier gas was flowed out the sloping portion 146b of part 126 by gas, carrier gas was flowed along sloping portion 146b.
Since by the air-flow of technology operating part 122, can be from the surface removal particle P of wafer W.In technology operating part 122, particle P can from wafer W be removed and along the air-flow of carrier gas from wafer W transmission leave.
When the air current flow of particle P in technology operating part 122, particle P since gravity reduce gradually.Therefore, the particle of removing from wafer W may be fallen on the surface of wafer W.
According to embodiments of the invention, flowing gas supply member 600 can be included in the chamber 100, as shown in Figure 8.
With reference to figure 8, flowing gas supply member 600 is configured as nozzle, it disposes the surface that is used for flowing gas is expelled to wafer W.The shape of flowing gas supply member 600 is used to inject the purification member 300 of Purge gas similar in appearance to configuration.Flowing gas supply member 600 can be provided with near purifying member 300.For example, flowing gas supply member 600 can be arranged on and purify member 300 times.
With reference to figure 9, flowing gas supply member 600 is expelled to flowing gas with lower injection pressure the surface of wafer W.The angle of the injection of flowing gas supply member 600 is less than the injection angles that purifies member 300.With the surface collision of wafer W after, flowing gas upwards flows out part 126 to gas and flows.
As shown in Figure 9, by Purge gas after wafer W separating particles P, can remove particle P by the air-flow along carrier gas from the surface of wafer W.
According to embodiments of the invention, can use the shaft-like or tabular pouring member 460 that is formed with a plurality of injection orifices that carrier gas is supplied in the chamber 100, as shown in figure 10.Shaft-like or tabular pouring member 460 can increase the flow velocity of carrier gas.Can provide difform upper wall 140 according to embodiments of the invention.
According to embodiments of the invention, as shown in figure 11, upper wall can have flat substrate surface 140a and the acceleration means 140b below that is connected with flat substrate surface 140a.Acceleration means 140b comprises basal surface 147b and sloping portion 148b and 149b.Basal surface 147b be flat and, be arranged at the top of technology operating part 122.
Sloping portion 148b and 149b are arranged at that gas flows into part 124 and gas flows out part 126, and the extension that is inclined upwardly from the both sides of basal surface 147b respectively.The sloping portion 148b that is arranged at gas inflow part 124 can have identical inclination angle or different inclinations angle with the sloping portion 149b that is arranged at gas outflow part 126.According to embodiments of the invention, acceleration means 140b can couple removedly with basal surface 140a.
Figure 12 and Figure 13 show dry cleaning apparatus 2 according to another embodiment of the present invention.The opening 109 of chamber 100 is arranged in the wall of chamber 100.Dry cleaning apparatus 2 comprises chamber 100, supporting member 200, purifies member 300 and carrier gas supply member 400.Supporting member 200 is arranged in the chamber 100, is used for supporting wafers W.Be discharged to the outside from the particle P of the surface isolation of wafer W by the carrier gas of supplying with from carrier gas supply member 400.
With reference to Figure 12, supporting member 200 is installed on the swivel plate 100b.The back shaft 260 that supporting member 200 comprises gripper shoe 220 and is used for gripper shoe 220 is supported.Back shaft 260 moves up or down, or utilizes drive member 240 rotations.Back shaft 260 projects upwards and is fixed in the basal surface of gripper shoe 220 from swivel plate 100b.Gripper shoe 220 is dished plates.The top surface of gripper shoe 220 is flat substantially.
Transmission automation 30 is installed on the base plate 20.Transmission automation 30 is provided with near chamber 100 and comprises vertical rod 32 and horizontal arm 34.Vertical rod 32 can move up and down and rotate, and horizontal arm 34 extends also and can flatly move from vertical rod 32.When swivel plate 100b was positioned wait state, transmission automation 30 received wafer W and wafer W is transferred to gripper shoe 220 from container.The surface of wafer W of transmission is located to such an extent that be parallel to base plate 20.Gripper shoe 220 can utilize vacuum suction, mechanical grip or electrostatic force to fix wafer W.
When wafer W was placed on the gripper shoe 220, gripper shoe 220 rotations were positioned duty.In body 100a, wafer W is erect and is supported by gripper shoe 220.That is, the surface of wafer W is in the face of the rear wall of body 100a.
According to embodiments of the invention, carrier gas supply member 400 is arranged at the upper wall of chamber 100.Exhaust component 500 is arranged at the lower wall of chamber 100.In an exemplary embodiment, carrier gas supply member 400 can comprise the fan filter element, and this fan filter element comprises fan 420 and filter 440.The carrier gas that is fed in the chamber 100 by fan 420 can be filtered device 440 filtrations.According to embodiments of the invention, the air-flow of carrier gas surface along wafer W in chamber 100 moves to the bottom from top.That is carrier gas vertical moving in chamber 100.Carrier gas can be dry air, nitrogen, inert gas or dry ice.
Purify member 300 and comprise that configuration is used for high pressure purge gas is expelled to nozzle on the wafer W.Purge gas can for example be nitrogen or inert gas, and it is to the influence of the pattern generating minimum that forms on wafer W.Purifying member 300 is rod-shaped nozzle, its diameter similar in appearance to or greater than the diameter of wafer W.Purify member and be arranged at the flow direction that is basically perpendicular to carrier gas in the chamber 100.A plurality of injection orifices 302 are formed at purification member 300 and separate at regular intervals.Purify the madial wall that member 300 can be arranged at chamber 100 securely, drive member 240 can upwards move gripper shoe 220 to purifying nozzle 300.Drive member 240 can comprise for example cylinder or motor.Gripper shoe 220 can be fixed, and purifying member 300 can move at the carrier gas flow direction.
Perhaps, according to another embodiment of the present invention, laser member 300 ' shown in Figure 15 can be used as the purification member.Laser member 300 ' is connected to the outside of the rear wall 160 of chamber 100.Laser member 300 ' laser beam radiation between the rear wall 160 of the surface of wafer W and chamber 100 produces shock wave, thereby removes the particle P on the surface that attaches to wafer W from wafer W.Perhaps, laser member 300 ' can be directly removes particle P with bombardment with laser beams to the surface of wafer W.By drive member 240, gripper shoe 220 can be moved and rotation up and down.
Can move down by the air-flow and the gravity of carrier gas from the particle P of the surface isolation of wafer W.When wafer W is erect, can not be attached to the surface of wafer W once more from the particle P of wafer W removal.
Because the various technologies of carrying out before process for purifying can produce static from the wafer W that is positioned on the gripper shoe 220.The particle P that separates from wafer W may be absorbed wafer W once more by static.The ion generator (not shown) that is applied with voltage can be arranged in the chamber 100 and remove static.
With reference to Figure 16, flowing gas supply member 600 is arranged at the surface that makes foreign substance P can fully leave wafer W in the chamber 100 and falls.Flowing gas supply member 600 comprises nozzle, and this nozzle arrangement is used for flowing gas is expelled to the surface of wafer W.Flowing gas supply member 600 shapes are used to inject the purification member 300 of Purge gas and approaching purification nozzle 300 can be set in parallel similar in appearance to configuration, as shown in figure 16.Flowing gas supply member 600 is with low injection pressure and flowing gas is expelled to the surface of wafer W less than the injection angles of the injection angles that purifies member 300.With the surface collision of wafer W after, flowing gas flows to rear wall 160.Can be by the air-flow of carrier gas with by gravity 100 discharges by Purge gas from the chamber from wafer W separating particles P.
Figure 17 shows the chamber 100 of dry cleaning apparatus 1 according to another embodiment of the present invention.Wafer W may be absorbed once more from the particle P of the surface isolation of wafer W.Quick carrier gas air-flow in the space between the rear wall 160 of the surface of wafer W and chamber can minimum particle P absorption once more.When using the wafer W of larger diameter, may produce more absorption once more.Can improve the flow velocity of carrier gas by the speed that increases fan 420.The speed of the increase of fan 420 can produce eddy current, and it increases for example power consumption.
In one exemplary embodiment of the present invention, can change the aisle spare that gas flows into part 124, technology operating part 122 and gas outflow part 126 by in chamber 100, forming upper wall 160 '.With reference to Figure 17, upper wall 160 ' comprises the first 162 that is arranged at PROCESS FOR TREATMENT part 122, be arranged at gas flows into the second portion 164 of part 124 and is arranged at the third part 166 that gas flows out part 126.First 162 is lower than second portion 164 and third part 166.First 162 is horizontally disposed with.Second portion 164 comprises: vertical component 164a is vertically installed in the zone adjacent to carrier gas supply member 400; Sloping portion 164b is arranged between first 162 and the vertical component 164a.Form sloping portion 164b to wafer W downwards.Third part 166 comprises: vertical component 166a is vertically installed in the zone adjacent to exhaust component 500; Sloping portion 166b is arranged between first 162 and the vertical component 166a.Upwards leave wafer W and form sloping portion 166b.
Figure 18 has shown the direction and the speed of the air-flow that the various piece in chamber 100 is produced by carrier gas in chamber 100.The speed of the Length Indication air-flow of arrow.Also shown from the runner of the foreign substance P of wafer W separation.
With reference to Figure 18, utilize carrier gas supply member 400, carrier gas is flowed into part 124 with predetermined speed inflow gas.Carrier gas is accelerated when the sloping portion 164b by upper wall 160 '.Move soon in the carrier gas of flowing in the surface of wafer W than the carrier gas that inflow gas flows into part 124.Then, carrier gas is flowed out part 126 at gas coming through, and is discharged to the outside by exhaust component 500.When carrier gas was passed through below the sloping portion 166b of gas outflow part 126, carrier gas was flowed along sloping portion 166b.
With reference to Figure 17, by purify member 300 from the surface isolation of wafer W particle P.Because the air-flow that produces in technology operating part 122, the particle P that separates from wafer W can be transferred to gas outflow part 126.
According to embodiments of the invention, carrier gas can be fed in the chamber 100 by shaft-like or tabular pouring member 460, is formed with the flow velocity that a plurality of injection orifices improve carrier gas in pouring member 460.
Figure 20 shows the chamber 100 of dry cleaning apparatus 2 according to another embodiment of the present invention ".When using dry cleaning apparatus 2 shown in Figure 12 to carry out process for purifying, the gripper shoe 220 of vacuum suction supports the wafer W of setting by for example using.When carrying out technology, thereby wafer W can slide damage wafers W from gripper shoe 220.Fixed component 700 is set to receive wafer W to prevent the damage of wafer W when wafer when gripper shoe slides.Fixed component 700 is installed on swivel plate 100b and goes up and be arranged at gripper shoe 220 belows.Perhaps, supporting member 700 can be arranged at different positions, such as the sidewall or the lower wall of body.
Figure 21 is the perspective view of fixed component 700, and Figure 22 is the side view of fixed component 700 shown in Figure 21 according to an embodiment of the invention.
With reference to Figure 21 and Figure 22, fixed component 700 comprises the receiving unit 730 that is used to receive wafer W.Fixed component 700 comprises first member 720, second member 740 and the 3rd member 760.First and second members 720 and 740 and connect by the 3rd member 760 toward each other and divide and to be arranged.First and second members 720 and 740 are for example bow, and the 3rd member 760 comprises a plurality of bars perpendicular to first and second members 720 and 740.
Second member 740 couples with the support column 710 that is arranged at swivel plate 100b.Receiving unit 730 comprises the space that is formed by first member 720, second member 740 and the 3rd member 760.Can be stopped by the 3rd member 760 from the wafer W of gripper shoe 220 landings.Perhaps, first and second members 720 and 740 are plates, and the 3rd member 760 is twisted plates.Fixed component 700 can comprise the material softer than wafer W.For example, fixed component 700 can comprise polyether-ketone (polyetheretherketone) or polytetrafluoroethylene (PTFE) (Teflon).
Whether be fixed member 700 of sensing member 780 sensing wafer W receives.Sensing member 780 comprises luminescence sensor 782 that is used for radiant light and the optical receiving sensor 784 that is used for the light of receiver radiation.Luminescence sensor 782 and optical receiving sensor 784 are positioned opposite to each other.Luminescence sensor 782 can be arranged at a side of first member 720, and optical receiving sensor 784 can be arranged at a side of second member 740.If optical receiving sensor 784 does not receive light, judge that then wafer W is from gripper shoe 220 landings.The operator can receive from gripper shoe 220 landings and the member 700 that is fixed by siren or the notified wafer W of monitor.When wafer W during from gripper shoe 220 landings, technology can be interrupted.Perhaps, sensing member 780 can be for being arranged at the pressure sensor of the 3rd member 760 1 sides.
Figure 23 shows the equipment that comprises a plurality of dry cleaning apparatus according to an embodiment of the invention.A plurality of dry cleaning apparatus are arranged as delegation.Before chamber 100, it is parallel with a plurality of chamber 100 that rail 36 is set above substrate plate 20.End parts at rail 36 is provided with transmission automation 30.
Though described preferred embodiment with reference to the accompanying drawings, yet it will be appreciated by those skilled in the art that and the invention is not restricted to these clear and definite embodiment, but can make various variations and modification without departing from the spirit and scope of the present invention.All these changes and modifications are intended to be included in the scope of the present invention that is defined by claim.
The application requires the korean patent application No.2004-99454 that submits on November 30th, 2004 and the priority of the korean patent application No.2004-92020 that submits on November 11st, 2004, and its full content is incorporated in this as a reference.
Claims (36)
1, a kind of dry cleaning apparatus that is used to purify the surface of Semiconductor substrate comprises:
The chamber comprises the first wall and second wall;
Supporting member comprises the wafer receiving surface;
Purify member, be used for from being placed on the surface removal particle of the substrate on the described supporting member; With
The carrier gas supply member, be used to supply with carrier gas and will be transferred to the outside of described chamber from the particle of the surface isolation of described substrate, wherein, the first wall of described chamber comprises and is provided with in the face of the first of described wafer receiving surface and adjacent formation with described first and is provided with the second portion of the described carrier gas supply member of receiving unit.
2, dry cleaning apparatus as claimed in claim 1, wherein, the gap between described first and the described wafer receiving surface is less than the gap between described second portion and described second wall.
3, dry cleaning apparatus as claimed in claim 1, wherein, the second portion of described first wall comprises sloping portion.
4, dry cleaning apparatus as claimed in claim 1, wherein, the first of described first wall is horizontally disposed with.
5, dry cleaning apparatus as claimed in claim 1, wherein, the first wall of described chamber also comprises third part, and wherein, the gap between described first and the described wafer receiving surface is less than the gap between described third part and described second wall.
6, dry cleaning apparatus as claimed in claim 5, wherein, described third part comprises sloping portion.
7, dry cleaning apparatus as claimed in claim 1 also comprises:
The flowing gas supply member is used for flowing gas is expelled to the surface of the substrate that is positioned over described supporting member.
8, dry cleaning apparatus as claimed in claim 7, wherein, the flowing gas supply member comprises flow nozzle, described nozzle arrangement is used for flowing gas downwards to the surperficial injection flow gas that is positioned over the substrate on the described supporting member.
9, dry cleaning apparatus as claimed in claim 1 also comprises the drive member that is used for mobile supporting member.
10, dry cleaning apparatus as claimed in claim 9, wherein, described purification member comprises the purification nozzle, and described nozzle has a plurality of injection orifices, and described nozzle arrangement is used for Purge gas is expelled to the surface that is positioned over described supporting member.
11, dry cleaning apparatus as claimed in claim 9, wherein, described purification member also comprises laser member, described laser member is used at the surface of described substrate laser beam radiation.
12, dry cleaning apparatus as claimed in claim 1, wherein, described carrier gas supply member comprises:
Blower fan; With
Filter element is used to filter carrier gas.
13, dry cleaning apparatus as claimed in claim 1, wherein, described upper wall comprises:
Substrate surface; With
Acceleration means is coupling with respect to the position of described wafer receiving surface and the bottom of described substrate surface.
14, a kind of dry cleaning apparatus that is used to purify the surface of Semiconductor substrate comprises:
Chamber, described chamber have the gas inflow part that is used to receive carrier gas;
Technology operating part, described technology operating part flow into part from described gas and extend and be used for from being placed on the surface removal particle of the substrate on the supporting member; With
Gas flows out part, described gas flow out part from described technology operating part extend and be used for carrier gas is transferred to described outdoor, wherein,
The area of section of described technology operating part flows into the area of section of part less than described gas.
15, dry cleaning apparatus as claimed in claim 14 wherein, flows into part near described technology operating part with described gas, and the area of section that described gas flows into part reduces gradually.
16, dry cleaning apparatus as claimed in claim 14, wherein, described gas flows out the area of section of the area of section of part greater than described technology operating part, and flows out part away from described technology operating part with described gas, and the area of section that described gas flows out part increases.
17, dry cleaning apparatus as claimed in claim 14 wherein, forms described gas by curved upper wall and flows into part, technology operating part and gas outflow part.
18, dry cleaning apparatus as claimed in claim 17, wherein, the upper wall of described chamber comprises:
Substrate surface; With
The acceleration means that the bottom of described substrate surface couples.
19, dry cleaning apparatus as claimed in claim 14, wherein, described gas flows into part and receives the flowing gas supply member that is used for flowing gas is expelled to the substrate that is positioned over described supporting member.
20, a kind of dry cleaning apparatus that is used to purify wafer surface comprises:
The chamber;
The supporting member that is used for the vertical placement of supporting wafers;
Be used for from the purification member of the surface removal particle that is placed on the wafer on the described supporting member; With
Be used for carrier gas is supplied to the carrier gas supply member of described chamber.
21, dry cleaning apparatus as claimed in claim 20, wherein, described chamber comprises:
Body has the sidewall that is formed with opening; With
Swivel plate is used to open and close described opening,
Wherein, described supporting member is arranged at described swivel plate, and when described swivel plate setting was opened described opening, described wafer flatly was positioned on the described supporting member.
22, dry cleaning apparatus as claimed in claim 21 also comprises:
Drive member is arranged at described swivel plate, is used for moving and rotates wafer on the described swivel plate.
23, dry cleaning apparatus as claimed in claim 21 also comprises:
Supporting member is used for receiving described wafer downwards when wafer when described supporting member separates.
24, dry cleaning apparatus as claimed in claim 23, wherein, the surface of described fixed component comprises the material softer than described substrate.
25, dry cleaning apparatus as claimed in claim 23, described fixed component also comprise and are used for the sensing the member whether described wafer of sensing is received by described fixed component.
26, dry cleaning apparatus as claimed in claim 23, wherein, described fixed component comprises:
First member;
Second member separates and setting in parallel from described first member; With
The 3rd member connects described first member and described second member and fixing described wafer.
27, dry cleaning apparatus as claimed in claim 26, wherein, described fixed component also comprises:
Luminescence sensor is arranged at described first member; With
Optical receiving sensor is arranged at described second member, and wherein, described luminescence sensor and optical receiving sensor are positioned opposite to each other.
28, dry cleaning apparatus as claimed in claim 20, wherein, the sidewall of described chamber comprises first and second portion, described first is provided with respect to the surface that is placed on the wafer on the described supporting member, described second portion setting flows into described carrier gas, and described first is than the flow velocity of the carrier gas of described second portion between the surperficial and described first of the described wafer of the outstanding increase of the described body of introversion.
29, dry cleaning apparatus as claimed in claim 28, wherein, described second portion comprises sloping portion.
30, dry cleaning apparatus as claimed in claim 28, wherein, described first level forms.
31, dry cleaning apparatus as claimed in claim 28, wherein, described sidewall also comprises: third part, be arranged at the position that carrier gas is flowed out in the described chamber, described third part comprises sloping portion.
32, dry cleaning apparatus as claimed in claim 28 also comprises:
The flowing gas supply member is used for flowing gas is expelled to the surface of the substrate that is positioned over described supporting member.
33, dry cleaning apparatus as claimed in claim 28, wherein, described purification member comprises the purification nozzle, and described nozzle arrangement is used for Purge gas is expelled to the surface that described chamber is positioned over the substrate on the described supporting member, and a plurality of injection orifice is formed at the purification nozzle.
34, dry cleaning apparatus as claimed in claim 28 wherein, purifies member and also comprises laser member, and described laser member is used for laser beam radiation above described wafer surface.
35, dry cleaning apparatus as claimed in claim 28, wherein, described carrier gas supply member comprises:
Blower fan; With
Filter element is used to filter carrier gas.
36, dry cleaning apparatus as claimed in claim 28, wherein, described upper wall comprises:
Substrate surface; With
Acceleration means couples with the bottom of described substrate surface.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR92020/04 | 2004-11-11 | ||
| KR1020040092020A KR100706236B1 (en) | 2004-11-11 | 2004-11-11 | Dry cleaning apparatus used in manufacturing semiconductor devices |
| KR99454/04 | 2004-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1792475A true CN1792475A (en) | 2006-06-28 |
Family
ID=36804238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005101203678A Pending CN1792475A (en) | 2004-11-11 | 2005-11-11 | Dry cleaning apparatus used to manufacture semiconductor devices |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100706236B1 (en) |
| CN (1) | CN1792475A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108856153A (en) * | 2018-06-27 | 2018-11-23 | 南京汽轮电力控制有限公司 | The positive and negative wind pressure automatic cleaning method of optical device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010039752A1 (en) * | 2010-08-25 | 2012-03-01 | Wacker Chemie Ag | Polycrystalline silicon and process for its preparation |
| JP5856890B2 (en) | 2012-03-29 | 2016-02-10 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment equipment |
| KR102291883B1 (en) * | 2014-12-22 | 2021-08-20 | 주식회사 케이씨텍 | Wafer treating apparatus for wafer polished by chemical mechanical polishing process |
| CN112512195B (en) * | 2020-11-18 | 2024-02-27 | 深圳市中明科技股份有限公司 | Device for eliminating chip static electricity |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61152021A (en) | 1984-12-26 | 1986-07-10 | Hitachi Ltd | Drier |
| KR950010199B1 (en) * | 1992-06-05 | 1995-09-11 | 현대전자산업주식회사 | Chemical vapor deposition tube |
| JPH10312983A (en) | 1997-05-12 | 1998-11-24 | Dainippon Screen Mfg Co Ltd | Substrate-cleaning device |
| JP2002113431A (en) * | 2000-10-10 | 2002-04-16 | Tokyo Electron Ltd | Cleaning method |
-
2004
- 2004-11-11 KR KR1020040092020A patent/KR100706236B1/en not_active IP Right Cessation
-
2005
- 2005-11-11 CN CNA2005101203678A patent/CN1792475A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108856153A (en) * | 2018-06-27 | 2018-11-23 | 南京汽轮电力控制有限公司 | The positive and negative wind pressure automatic cleaning method of optical device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100706236B1 (en) | 2007-04-11 |
| KR20060044186A (en) | 2006-05-16 |
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Open date: 20060628 |