CN1790724A - Display device and method for manufacturing the same - Google Patents

Display device and method for manufacturing the same Download PDF

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Publication number
CN1790724A
CN1790724A CNA2005101201070A CN200510120107A CN1790724A CN 1790724 A CN1790724 A CN 1790724A CN A2005101201070 A CNA2005101201070 A CN A2005101201070A CN 200510120107 A CN200510120107 A CN 200510120107A CN 1790724 A CN1790724 A CN 1790724A
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mentioned
predetermined pixel
pixel transistor
drive circuit
display unit
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久保田健
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/028—Generation of voltages supplied to electrode drivers in a matrix display other than LCD

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of El Displays (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

The invention aims at obtaining a display device and the manufacturing method thereof in order to effectively utilize the glass substrate and manufacture the width of light beam or a panel with the size above, which ensures the threshold values of thin film transistors to be different in the panel and enables to reduce the manufacturing cost. In order to compensate the difference of the threshold values of the thin film transistors on specific pixel lines, and the threshold values of the thin film transistors on other pixel lines, different driving circuits are arranged on the specific pixel lines and the other pixel lines, or the driving voltage can be individually adjusted.

Description

Display unit with and manufacture method
Technical field
The present invention relates to display unit with and manufacture method.
Background technology
In the past, following method is being carried out in exploitation and manufacturing as low-temperature polysilicon film transistor always: in the thin-film transistor that uses polysilicon, by using excimer laser to make the amorphous silicon fusion, thereby make its crystallization obtain polysilicon when cooling off then with heat.Thus, self is heated substrate hardly, so can make thin-film transistor on the low glass substrate of heat resisting temperature.And then, this thin-film transistor is used exploitation, manufacturing liquid crystal indicator and organic EL display (for example, referring to Patent Document 1) as driving element.
[patent documentation 1] spy opens 2002-341378 communique (the 4th page, Figure 10)
As above-mentioned, about the silicon that carries out crystallization by laser instrument, shine sharp according to sending to of objective table The crystallinity of silicon fiml roughly is homogeneous in the width regions of the laser beam of light. But, because real This width of light beam of Width of the glass substrate that use on the border is big, and substrate can not all be included this laser in In the width regions of bundle. For this reason, in fact certain is finished in the zone of the width of light beam of scan laser After the crystallization in zone, remaining zone is restarted the scanning of laser from the substrate end, carry out The crystallization in the zone of new laser beam width. At this moment, fully not overlapping in new and old zone, Owing to can not further shine laser so that very close to each other, so usually allow certain distance Overlapping and make the substrate surface crystallization. But, near the crystalline state of silicon fiml this lap Difference, therefore, the panel that is designed to goods does not touch this zone, for the display unit of reality, Use the part of the crystalline homogeneous of silicon fiml in this laser width zone.
For this reason, the display floater for making in the mode of including in this zone is manufactured on almost Can both obtain the image of homogeneous, no problem display unit in all situations. But, Instability also can take place in the vibration of laser. The part of shining therebetween is as so-called erroneous transmission, Only has the crystallinity of this regional silicon fiml from different on every side. Obtaining not become this zone is showing On the goods that can clearly visually identify, just brought the yield rate deterioration.
In addition, even the desire manufacturing during than the display unit of the regional big viewing area of the width of laser beam and the display unit that is designed to little viewing area also can be when taking out in the face in the glass substrate that panel is counted to greatest extent, exceed from the zone of the width of laser beam.At this moment, use and above-mentioned crystalline different overlapping part on every side, still on showing, can know identification visually, can't become the goods in the practicality.Thus, in the display unit of using actual low-temperature polysilicon film transistor, can not make the panel of present width of light beam or above size, in addition, become the obstacle of producing cheaply in the face that makes full use of glass substrate.
Summary of the invention
The present invention carries out for eliminating above-mentioned problem, its purpose is to provide a kind of and allows the threshold value of low-temperature polysilicon film transistor different in panel, display unit outstanding aspect production cheaply with and manufacture method.
Display unit of the present invention comprises: the pixel line with a plurality of pixels, the pel array that constitutes by a plurality of above-mentioned pixel lines, drive a plurality of pixel transistors of above-mentioned a plurality of pixels, and the drive circuit that drives above-mentioned a plurality of pixel transistors, it is characterized in that, above-mentioned a plurality of pixel transistor comprises a plurality of predetermined pixel transistors, above-mentioned drive circuit has: drive the 1st drive circuit of above-mentioned predetermined pixel transistor and drive the 2nd drive circuit of the pixel transistor beyond the above-mentioned predetermined pixel transistor, the difference of each threshold voltage of above-mentioned predetermined pixel transistor 0.1V or more than, 0.5V or below, the difference of the threshold voltage of the pixel transistor beyond above-mentioned predetermined pixel transistor and the above-mentioned predetermined pixel transistor 0.5V or more than, 1.5V or below.
This invention can be fabricated onto impossible so far display floater bigger than laser beam width, in addition, can freely not dispose lavishly on glass substrate, so can increase the taking-up number of each substrate.In addition, allow the threshold value of low-temperature polysilicon film transistor different in panel, thereby can make the good display unit of display quality, also can reduce manufacturing cost itself greatly with very high rate of finished products.
Description of drawings
Fig. 1 is the profile of thin-film transistor structure forming process of the liquid crystal indicator of expression embodiments of the present invention 1.
Fig. 2 is the figure of laser anneal method of thin-film transistor of the liquid crystal indicator of expression embodiments of the present invention 1.
Fig. 3 is the figure of the relation of the laser annealing of thin-film transistor of liquid crystal indicator of expression embodiments of the present invention 1 and Vth.
Fig. 4 is the pixel transistor of liquid crystal indicator of expression embodiments of the present invention 1 and the figure of driving circuit structure.
Fig. 5 is laser annealing and the relation of Vth and the figure of driving circuit structure of thin-film transistor of the liquid crystal indicator of expression embodiments of the present invention 2.
Fig. 6 is the schematic diagram of laser anneal device of thin-film transistor that is used to illustrate the liquid crystal indicator of embodiments of the present invention 1 and 2.
Symbol description
107 laser radiations
205 annealing region A
207 annealing region B
209 overlapping portions
301 pixel regions
305 overlapping portions
307 source electrode lines
401 source electrode lines
403 pixel transistors
405 pixel transistors
407 adjust circuit
501 annealing region A
503 annealing region B
506 overlapping portions
507 gate lines
509 adjust circuit
Embodiment
Execution mode 1
Fig. 1 is the generalized section of manufacture method that is used to illustrate the method for manufacturing thin film transistor of the low temperature polycrystalline silicon that uses embodiments of the present invention 1 and uses its liquid crystal indicator.And in the key diagram that uses in each execution mode of following explanation, identical or suitable part is used identical symbol, omits its explanation.
With reference to figure 1 (a), in the liquid crystal indicator in the present embodiment, at first (Plasma Enhanced Chemical Vapor Deposition: plasma enhanced chemical vapor deposition) method etc. is forming the basilar memebrane 103 that is made of the silicon oxide film about thickness 2500 on the glass substrate 101 by for example PECVD.Basilar memebrane 103 also can use the laminated film of silicon nitride film and silicon oxide film etc. etc.Form the amorphous silicon film 105 about thickness 500 on this basilar memebrane 103.By the solid state laser that uses YAG laser etc. amorphous silicon film 105 is annealed, become the polysilicon film of the channel region of p type Thin Film Transistor (TFT) and n type Thin Film Transistor (TFT).
Use the laser of λ=370～710nm, as solid state laser preferably YAG laser, YVO 4Laser uses the crystallization of doping Nd ion and the crystallization of Yb ion.Preferably with second high order harmonic component (wavelength 532nm) of Nd:YAG laser (below be designated as YAG2) and Nd:YVO 4Second high order harmonic component (wavelength 515nm) of second high order harmonic component of laser (wavelength 532nm), Yb:YAG laser etc. is used as pulse laser.With reference to figure 6,,, substrate is all scanned rectangular light beam successively by moving the objective table that carries substrate as illuminating method to glass substrate.
With reference to figure 1 (b), by dry etching polysilicon film 109a, 109b, the 109c of island are processed and formed to the polysilicon film of above-mentioned formation, become the dielectric film 111 of the dielectric film of gate insulating film and capacitance electrode.As this dielectric film 111, for example can use that (TETRAETHOXY SILANE: the silicon oxide film that forms of PECVD tetraethoxy-silicane), at this, thickness is 700 by TEOS.Then, covering with resist film under the state of polysilicon film 109a, 109b,, forming lower electrode phosphorus (P) ion of polysilicon film 109a injection as n type conductive impurities.
With reference to figure 1 (c), use sputtering method on dielectric film 111, to form the molybdenum alloy film, remove the part of molybdenum alloy film by carrying out composition, thereby form common electrode 115a and gate electrode 115b, 115c.Thus, constitute storage capacitance 117 by common electrode 115a, lower electrode 113 and dielectric film 111.To as the phosphonium ion of n type conductive impurities be injected into regions and source 119a, 119b thereafter.In addition, regions and source 121a, 121b inject for example boron (B) ion as p type conductive impurities.Like this, form n type Thin Film Transistor (TFT) 123 and p type field-effect transistor 125.Then, on common electrode 115a and gate electrode 115b, 115c, form the diaphragm 127 that constitutes by the silicon oxide film about thickness 6000 that use TEOS CVD to form.Then, carrying out heating-up temperature is 400 ℃ activate annealing.By be dry-etched in diaphragm 127 and dielectric film 111 on form 1st contact hole 129a～129e thereafter.Then, form 3 tunics of molybdenum film, aluminium film and molybdenum film,, form electrode 131a～131d by this 3 tunic being carried out etching processing.And, on 131a～131d, form the dielectric film 135 that for example constitutes, and then form planar film 137 by silicon nitride film.By using the photoresist phenomenon of exposing on this planar film 137, to form the 2nd contact hole 139.By the inside of the 2nd contact hole 139 to the upper face of planar film 137, form transparent electric conductor film.Come part to remove this transparency electric conductor film by etching, thus, form pixel electrode 141.
At peripheral circuit region, use said method to form p type Thin Film Transistor (TFT) and n type Thin Film Transistor (TFT), these are made up, constitute peripheral circuit.In addition, in display pixel area, form display pixel by the transparency electrode that is electrically connected n type Thin Film Transistor (TFT) and form by other approach.And then the glass substrate that will be formed with as these elements of semiconductor device fits with another glass substrate that is formed with colour filter and opposite electrode.And, inject liquid crystal in the gap that between these glass substrate, forms, seal etc., below, can access liquid crystal indicator by the operation of implementing to be scheduled to.
With reference to Fig. 2, the planar structure of the liquid crystal panel that uses above-mentioned process is described.On glass substrate, dispose the target board of making effectively, so that it is maximum to take out number.At this moment, the position relation of the overlapping region during correct laser annealing of holding the panel finished and above-mentioned explanation.As an example, a certain panel is described.
With reference to figure 2 (a), at first, carry out laser radiation from the silicon of the annealing region A205 of panel end.The irradiation of laser scans along the source electrode line direction in the pel array.The source electrode line direction is the direction vertical with the long side direction of light beam, and annealing region A205 is the width on the long limit of light beam.
With reference to figure 2 (b), permission is overlapping for annealing region A205 slight amount, begins scanning by the panel end, finishes the annealing of the annealing region B207 of width of light beam.According to the size of substrate, need repeat identical several times action, thus, finish the whole crystallization of substrate.There is overlapping 209 in annealing region A205 and annealing region B207.
With reference to figure 3, carry out beam flying to comprising on the panel zone 303 with the pixel region 301 of array-like configuration pixel, finally there are 4 zones of annealing region A～D and 3 overlapping 305.In fact design in the glass of liquid crystal panel before the configuration, estimate with the tested glass that only forms transistor and can measure characteristics of transistor in advance.Thus, in the pixel line of the direction parallel with the scanning direction of laser radiation, any 2 transistorized threshold value Vth keep | the relation of Vth1-Vth2|＜0.5V.In addition, for the transistor that exists among equitant overlapping of annealing region A and the annealing region B, in overlapping apart from the part of 2 lines of an annealing region B pixel line near side, the source electrode line direction with and extended line on transistorized threshold value Vth3 and the transistorized Vth1 of other line between, have | the relation of Vth1-Vth3| 〉=0.5V.In concept, shown in the chart of Fig. 3, the part of having only 2 lines on right side on the figure in 1 overlapping with and the extended line of 2 lines on transistorized Vth lower slightly.Can think,, in same lap, also can reproduce according to such basic data, therefore consistent with 6 lines in 3 overlapping, carry out special-purpose display panels design.In a single day because the laser beam width does not reproduce for the device that uses with changing and glass size does not change,, just can become the good data of reproducibility if obtain above-mentioned basic data.Thus, it is reflected in the design of liquid crystal panel, not difficult.
Then, the example to the method that is used for eliminating the problem in the demonstration that comprises the different transistorized liquid crystal panel of this Vth value describes.
With reference to figure 4, overlapping portion is provided with panel in the parallel mode of relative source electrode line, the Vth step-down of the predetermined pixel transistor of the source electrode line of m, the m+1 of overlapping portion, m+a, m+a+1, m+2a, m+2a+1.Like this, the predetermined pixel line with the different predetermined pixel transistor of Vth has the feature and the length of laser width for determining of many lines that become adjacency, so, become have as above-mentioned can be with the line in certain cycle of ordered series of numbers regulation.Predetermined pixel line is periodic, so it is easy to be used for the design corresponding with it in advance.
For this 6 root polar curve, adopt the different transistor of transistor 405 of source electrode line in the pixel transistor 403 with other.Vth influences charging rate etc. and visually recognizes and shows and go up mistake, and therefore, width by adjusting transistorized raceway groove and length etc. needn't be appended the difference that the circuit that is used to proofread and correct just can be eliminated Vth.In addition, also can access identical effect by changing transistorized shape, material.
And, make and be connected in the different circuit of drive circuit of other line at this drive circuit that will be connected with this predetermined pixel line.Among Fig. 4,1 drive circuit 409 that drives each line is shown, but inner that be connected with the pixel line of being scheduled to be connected with other line be respectively the different drive circuit of output impedance.Concrete, for as the source electrode line beyond 6 source electrode lines of these predetermined pixel lines, the offset distance of internal wiring is made the long resistance value that changes.Resistance value for a change, the method that the material of centre is made different materials is also effective.In the method, by the simple design change that is used to proofread and correct, so can eliminate the difference of Vth.
Even have only above-mentioned correction, also can obtain being difficult to visually recognizing inhomogeneous in the demonstration that the fluctuation by Vth causes, but, deviation a little also takes place in the fluctuation situation of Vth, makes and can be adjusted to further observation illuminating state, can not further find remaining uneven structure.Concrete, to all specific lines install adjust circuit 407 so that link to each other with transistor and simulate adjustment resistance.Using is not the circuit on the liquid-crystalline glasses and be to use 407 pairs of voltages that put on these transistorized grids of simple adjustment circuit of variable resistor on the power supply substrate that is arranged on installation etc. and variable capacitance etc. to control, can observe display image on one side, Yi Bian adjust inhomogeneous for reaching not in-problem in the use level.
At this, the overlapping portion during laser radiation installs the mode of adjusting circuit with the predetermined pixel line that only can predict the fluctuation of Vth and designs.All lines are installed identical adjustment structure independently, even also can be adjusted into the level that can visually do not recognized in the use for the fluctuation of the Vth that takes place in the uncertain line of generation as the erroneous transmission of laser.
In addition, even be not on certain line, in specific zone, reproduce, reproduce under the situation of the different state of Vth, pixel transistor by should the zone becomes shape different with other zone or different materials, according to the effect identical, can reach improvement by the level that can visually do not recognized in the use of reality or be difficult to visually be recognized with above-mentioned explanation.
In addition, in the present embodiment, only the configuration to the predetermined pixel transistor that is configured in overlapping portion is illustrated, and still, for the transistor of the peripheral circuit of drive circuit etc., also can be configured in the different transistorized generation area of Vth of overlapping portion.So long as digital circuit portion does not have the difference of Vth of the level of digital signal counter-rotating just not need to take countermeasure on the circuit, but, for analog circuit portion, with identical in the pixel, can take to install in advance compensation Vth difference circuit or change the countermeasure of transistorized structure etc.But the transistor arrangement of peripheral circuit is compared with pixel transistor, does not need the configuration of rule fully, therefore, has the selection in the zone that is not disposed at this Vth generation fluctuation of prediction.At this moment, do not need unnecessary correcting circuit etc. is set, can reduce the area of circuit region.
In addition, use present embodiment method in addition, the different zone that can access specific Vth is difficult to visually be recognized on showing for the difference in the zone beyond it, have satisfied | during transistorized group of Vth1-Vth2| 〉=0.5V display unit, also can access the effect identical with mode of the present invention.
In the present embodiment, the situation that the YAG laser of the polysilicon by obtaining the bulky grain diameter is easily formed polysilicon is illustrated, but the situation that forms polysilicon with excimer laser also can visually be recognized can obtain identical effect.In addition, as an example, liquid crystal indicator as infiltration type, use the liquid crystal indicator of ITO film to describe with pixel electrode, but, can extensively adapt to the reflecting electrode that uses A1 etc. reflection-type liquid-crystal display device, have both semitransparent type liquid crystal indicator so that use the organic EL display etc. of the thin-film transistor that constitutes by silicon fiml by identical laser crystallization, the situation of organic EL, on the principle, be very easy to visually recognize the deviation of the characteristics of transistor in the pixel, so can produce bigger effect.
As above-mentioned, invention according to design present embodiment 1, with overlapping of the laser radiation in the laser annealing mode configured board parallel with source electrode line, inhomogeneous being difficult to of demonstration that the fluctuation by the threshold value of the thin-film transistor on the source electrode line in overlapping is caused visually recognized.
Execution mode 2
In execution mode 1, with overlapping of the laser radiation in the laser annealing mode configured board parallel with source electrode line, inhomogeneous being difficult to of demonstration that the fluctuation by the threshold value of the thin-film transistor on the source electrode line in overlapping is caused visually recognized.To this, in the present embodiment, with overlapping of the laser radiation mode configured board parallel with gate line, inhomogeneous being difficult to of demonstration that the fluctuation by the threshold value of the thin-film transistor on the gate line in overlapping is caused visually recognized.
Use embodiments of the present invention 2 low temperature polycrystalline silicon method of manufacturing thin film transistor and use its cross-section structure of manufacture method of liquid crystal indicator identical with execution mode 1, so the omission explanation.
In the present embodiment, in the annealing of amorphous silicon film, gas lasers such as use excimer laser are annealed to amorphous silicon film, thus, become the polysilicon film of the channel region of p type Thin Film Transistor (TFT) and n type Thin Film Transistor (TFT).As laser gas, use Xe-Cl gas, be 308nm as wavelength, at 200～500mJ/cm 2Power bracket carry out the supervision of crystalline condition, determine suitable power simultaneously.As the illuminating method to glass substrate, the objective table by move carrying substrate is successively to the whole scanning light beams of substrate.
With reference to figure 5, at first, scan to the substrate other end by substrate one end successively along the direction irradiation vertical with the long limit of rectangular light beam, end is to the annealing of the annealing region A501 of the width on the long limit of light beam.And, allow a little overlapping to annealing region A501, begin scanning by substrate terminal, finish the annealing of the annealing region B503 of width of light beam.According to the size of substrate, need to repeat the identical action of number of times, finish the whole crystallization of substrate thus.
Below, identical with execution mode 1, carry out the manufacturing of liquid crystal indicator.
The planar structure of the liquid crystal panel of execution mode 2 is described then.On glass substrate, dispose the panel of the target of making effectively, thereby obtain maximum taking-up numbers.At this moment, the position relation of the overlapping portion of laser radiation during correct laser annealing of holding the panel finished and above-mentioned explanation.As example, describe for some panels.Note certain panel, as shown in Figure 6, separate annealing region A501 and two area illumination of annealing region B503, identical with execution mode 1, also there be overlapping 505 in present embodiment.In addition, the mode configured board that parallels with gate line with overlapping 505 long side direction.
In the present embodiment, identical with execution mode 1, in the glass of actual design liquid crystal panel, before the configuration, estimate with the tested glass that only forms transistor in advance and can measure transistor characteristic.Thus, on overlapping 505 parallel direction, any 2 transistorized Vth keep | the relation of Vth1-Vth2|＜0.5V.In addition, the transistor that exists among overlapping overlapping 505 of annealing region A and annealing region B, in overlapping 505 near the part of 1 line of the pixel line of the gate line direction of annealing region B503 one side with and prolongation on transistorized threshold value Vth3 and the transistorized Vth1 on other the line between, have | the relation of Vth1-Vth3| 〉=0.5V.In the present embodiment, the scanning direction of laser annealing is parallel with gate line, have only overlapping 505, on the figure 1 line of upside part with and prolongation on transistorized Vth slightly high.According to such basic data, the gate line in conjunction with the predetermined pixel transistor of Vth a great difference that present embodiment is existed carries out special-purpose liquid crystal panel design.
Then, describe comprising the example that the different transistorized liquid crystal panel of this Vth value do not produce the method for the problem in the demonstration being used for.As shown in Figure 5,1 line of the predetermined pixel transistor lift-launch of above-mentioned Vth a great difference is as n number.At this, use with the drive circuit that will be connected and be connected in different circuit on other the line with this predetermined pixel line.Concrete, the material of the part of the drive circuit portion of this line becomes the ITO film that uses the pixel electrode from common metal line, and the part of wiring is become bridge architecture on the ITO film.Thus, the ITO film has higher resistance than common metal line, therefore, has changed resistance value.Resistance value for a change, as the method for using in the enforcement mode 1, elongated to make high-resistance method also effective with the offset distance of wiring.In the method, identical with execution mode 1, change by the simple design that is used to proofread and correct, can eliminate the difference of Vth.
Even have only above-mentioned correction, also can obtain being difficult to visually recognizing the uneven effect in the demonstration that causes by the Vth fluctuation, but, deviation a little also takes place in the fluctuation situation of Vth, makes further observation illuminating state, still can not find the remaining uneven structure that can adjust.Concrete, the adjustment circuit 509 that is connected, can adjusts with simulated mode resistance with transistor is installed for specific line.Using is not the circuit on the liquid-crystalline glasses and be to use the simple adjustment circuit of variable resistor on the power supply substrate that is arranged on installation etc. and variable capacitance etc., the voltage that can impose on these transistorized grids is controlled, thus, can observe display image on one side, with inhomogeneous be adjusted in the use not in-problem level on one side.
At this, the overlapping portion of laser radiation installs the mode of adjusting circuit with the predetermined pixel line that only can predict the fluctuation of Vth and designs.By all lines are independently installed identical adjustment structure, to as fluctuation that the Vth that takes place in the uncertain line of erroneous transmission of laser takes place also can be adjusted into the level that can not visually be recognized in the practicality.
In the present embodiment, the situation that the excimer laser of the polysilicon by obtaining the bulky grain diameter is easily formed polysilicon is illustrated, and still, the situation that forms polysilicon with the YAG laser can be found identical effect.In addition, as an example,, use the liquid crystal indicator of ITO film to describe with pixel electrode as the liquid crystal indicator of infiltration type.Can be widely used in using the reflection-type liquid-crystal display device of the reflecting electrode of A1 etc., liquid crystal indicator with both semitransparent type.And then use the organic EL display etc. of the thin-film transistor that constitutes by silicon fiml by identical laser crystallization, under the situation of organic EL, especially on principle, because the deviation of the characteristics of transistor in the pixel is very easy to visually recognize, therefore, can further produce bigger effect.
As above-mentioned, invention according to present embodiment 2, with overlapping of the laser radiation in the laser annealing mode configured board parallel with gate line, inhomogeneous being difficult to of demonstration that the fluctuation of the transistorized threshold value that is connected with the gate line that exists in overlapping is caused visually recognizes.
In addition,, utilize the overlapping of laser, do not use the CD mask just can dispose the Vth transistor different with driving force if use present embodiment 1,2.

Claims (11)

1. display unit has: has the pixel line of a plurality of pixels, by pel array, a plurality of pixel transistors that drive above-mentioned a plurality of pixels and the drive circuit that drives above-mentioned a plurality of pixel transistors that a plurality of above-mentioned pixel lines constitute, it is characterized in that,
Above-mentioned a plurality of pixel transistor comprises a plurality of predetermined pixel transistors,
Above-mentioned drive circuit has: drives the 1st drive circuit of above-mentioned predetermined pixel transistor and drives the 2nd drive circuit of the pixel transistor beyond the above-mentioned predetermined pixel transistor,
The difference of each threshold voltage of above-mentioned predetermined pixel transistor is at 0.1V or above, 0.5V or following,
The difference of the threshold voltage of the pixel transistor beyond above-mentioned predetermined pixel transistor and the above-mentioned predetermined pixel transistor is at 0.5V or above, 1.5V or following.
2. display unit as claimed in claim 1 is characterized in that,
Above-mentioned a plurality of pixel line comprises: a plurality of predetermined pixel line that is made of the pixel that is driven by above-mentioned predetermined pixel transistor.
3. display unit as claimed in claim 2 is characterized in that,
Above-mentioned predetermined pixel line is parallel with source electrode line.
4. display unit as claimed in claim 2 is characterized in that,
Above-mentioned predetermined pixel line is parallel with gate line.
5. as claim 2 any described display unit to the claim 4, it is characterized in that,
Above-mentioned predetermined pixel line exist 3 or more than, the position of the above-mentioned predetermined pixel line in the above-mentioned pel array is periodic.
6. display unit as claimed in claim 1 is characterized in that,
The output impedance of above-mentioned the 1st drive circuit is different with the output impedance of above-mentioned the 2nd drive circuit.
7. display unit as claimed in claim 6 is characterized in that,
The internal wiring of above-mentioned the 1st drive circuit or from above-mentioned the 1st drive circuit to the internal wiring of the offset distance of the wiring of above-mentioned predetermined pixel transistor and above-mentioned the 2nd drive circuit or different from the offset distance of the wiring of the above-mentioned pixel transistor of above-mentioned the 2nd drive circuit beyond above-mentioned predetermined pixel transistor.
8. display unit as claimed in claim 6 is characterized in that,
To above-mentioned the 1st drive circuit internal wiring or from of the wiring of above-mentioned the 1st drive circuit, use with the internal wiring of above-mentioned the 2nd drive circuit or from the different material of wiring of above-mentioned the 2nd drive circuit to above-mentioned predetermined pixel transistor above-mentioned pixel transistor in addition to above-mentioned predetermined pixel transistor.
9. display unit as claimed in claim 1 is characterized in that,
The driving voltage of above-mentioned predetermined pixel transistor can be adjusted.
10. display unit as claimed in claim 1 is characterized in that,
The shape of above-mentioned predetermined pixel transistor or material are different with the pixel transistor beyond the above-mentioned predetermined pixel transistor.
11. the manufacture method of the manufacture method of a display unit, this method any described display unit that is claim 1 to the claim 10 is characterized in that,
To the substrate illumination laser beam, by the irradiation of moving above-mentioned light beam annealed in the light beam irradiates zone, repeatedly repeat the irradiation of above-mentioned light beam, make that above-mentioned light beam irradiates is interregional to have a lap, to annealing in the substrate surface, form above-mentioned pixel transistor and other thin-film transistor, above-mentioned predetermined pixel transistor is included in the above-mentioned lap.
CNA2005101201070A 2004-11-02 2005-11-02 Display device and method for manufacturing the same Pending CN1790724A (en)

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