CN1784829A - Piezoelectric device - Google Patents
Piezoelectric device Download PDFInfo
- Publication number
- CN1784829A CN1784829A CNA2004800126470A CN200480012647A CN1784829A CN 1784829 A CN1784829 A CN 1784829A CN A2004800126470 A CNA2004800126470 A CN A2004800126470A CN 200480012647 A CN200480012647 A CN 200480012647A CN 1784829 A CN1784829 A CN 1784829A
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- Prior art keywords
- piezoelectric
- next door
- piezoelectric device
- pad
- electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
It is possible to provide a low-cost piezoelectric device of CSP structure and in particular, an elastic surface wave device. Fort this, the piezoelectric device includes: a piezoelectric vibration element having at least an excitation electrode and a bonding pad extending from the excitation electrode on one of the main surfaces; and a plate-shaped printed circuit board having a pad electrode for mounting the piezoelectric vibration element and a grounding pad on the upper surface and an external electrode on the lower surface. The piezoelectric vibration element is fixed at a predetermined gap via a metal bump fixed to the bonding pad on the upper surface of the printed circuit board. The piezoelectric device is characterized in that a metal layer having a thickness greater than the opening dimension of the gap is formed over the entire upper surface of the piezoelectric device.
Description
Technical field
The present invention relates to small-sized, slim, the improvement of the piezoelectric device of CSP structure cheaply, particularly relate to and be used to protect piezoelectric vibration device not to be subjected to the improvement of the seal construction of external environment influence.
Background technology
Piezoelectric device, particularly surface acoustic wave device are widely used in the communications field, and because it has high-performance, small-sized and good characteristics such as production, especially generally are used in the mobile communicating equipment such as mobile phone.
Below, in the past surface acoustic wave device is described.
In surface acoustic wave device in the past, for example have the spy and show the disclosed device of flat 11-510666 communique, Fig. 7 is the sectional arrangement drawing of the structure of this package module of expression.
Surface acoustic wave device in the past comprises flat-shaped substrate (ceramic wiring substrate) 151; Upper surface at this substrate 151 passes through boss, is fixed across predetermined gap, and has the device system (surface acoustic wave chip) 152 of electricity conductive construction (comb electrode) at lower surface; Be configured to ring-type insulation frame 153 around the electricity conductive construction that lower surface had of this device system 152; And be used for from the encirclement frame (resin component) 154 in the gap between this insulation frame 153 of outer side covers and the described substrate 151.Carry out flip-chip and install, make the upper surface of described substrate 151 mutually opposed, and cover the outside in the gap between described insulation frame 153 and the described substrate 151 with described encirclement frame with the lower surface of described device system 152.And, constitute the upper surface and four sides, the surface that surrounds frame 154 and the face that exposes of substrate 151 upper surfaces that utilize metallic film protective layer 155 covering device systems 152.
For by surround frame 154 with it with the inboard of the insulation frame 153 of external environment condition isolation, promptly comprise that the atmosphere (vacuum or inert gas) in the space of electricity conductive construction maintains the state of regulation; hope is protective mulch 155 on the surface of the encirclement frame 154 of sealing effectiveness difference, can improve the reliability of surface acoustic wave device like this.But; in the formation operation of formation operation of surrounding frame 154 and protective layer (in dry process; generally be to use vacuum vapour deposition, sputtering method or CVD method) operation between; under surface acoustic wave device is exposed on situation in the atmosphere, be difficult to comprising that the atmosphere in the space of electricity conductive construction maintains the state of regulation.
In recent years, surface acoustic wave device is required further miniaturization, and the area of plane of substrate 151 is only slightly bigger than device system 152, and the difference between it is more and more littler.In addition, in order to improve production, generally be in the manufacturing of surface acoustic wave device, to implement batch process.Promptly; in batch process; use a plurality of substrates 151 are connected into laminal large-area substrates mother metal with narrow interval; respectively device system 152 being carried out flip-chip on each subregion on this substrate mother metal installs; in the gap between device system 152; by the disposable application of resin parts of silk screen printing (become and surround frame 154); protective mulch 155 on the outside of device system on the substrate mother metal 152 and encirclement frame 154; then by utilizing cutter sweep to cut off to be sandwiched in the protective layer 155 in the gap between the device system 152; surround frame 154 and substrate mother metal (full cutting), and obtain a plurality of surface acoustic wave devices.
But during the interface on the side (becoming the side of the surface acoustic wave device of singualtion) that covers encirclement frame 154 with protective layer 155 and encirclement frame 154 and substrate mother metal; shown in Fig. 8 (a); form groove 161 by cutting off (the 1st cuts off) by the part of the upper surface that is installed in total each other encirclement frame 154 of device system 152 on the substrate mother metal 160 and substrate mother metal 160; upper surface protective mulch 155 at the substrate mother metal 160 of the inner face that comprises this groove 161 (section); on this basis; use the thinner cutting knife 162 of cutting knife that uses than in the 1st cuts off; substantial middle at slot part 161; remaining half disposable cut-out (the 2nd cuts off) with protective layer 155 and substrate mother metal 160; thus; shown in Fig. 8 (b), can obtain to have covered the side of encirclement frame 154 and a plurality of surface acoustic wave devices at the interface between this encirclement frame 154 and the substrate 151 by protective layer 155.Therefore, (be equivalent to above-mentioned full cutting action in described the 2nd cut-out.) and the inter process of the formation operation of described protective layer need the described the 1st to cut off operation, therefore make manufacturing process complicated.
And, because it is narrow by the device system gap each other that flip-chip is installed on the substrate mother metal 160, so, in this gap, filling the resin component that becomes encirclement frame 164 by silk screen printing, and to prevent that resin component is immersed under the situation in the gap between insulation frame 153 and the substrate mother metal 160, be very difficult for the control of such silk screen printing operation.Therefore, productivity is low, is difficult to realize cost degradation.
That is, problem in the past is that the piezoelectric device of CSP structure cheaply can not be provided, and the surface acoustic wave device of CSP structure cheaply especially can not be provided.
Summary of the invention
In order to solve the above problems, the present invention's 1 piezoelectric device comprises: piezoelectric vibration device, it has piezoelectric substrate at least, be formed on the side interarea of this piezoelectric substrate excitation electrode and from the extended solder pad of this excitation electrode; With the tabular printed circuit board (PCB), the surface is provided with pad electrode and the earthy pad that described piezoelectric vibration device is installed usefulness thereon, and has outer electrode at its lower surface, by described solder pad is connected through the metal boss with described pad electrode, upper surface at described printed circuit board (PCB), with this upper surface be separated by the regulation the slit, fixed described piezoelectric vibration device, it is characterized in that, on whole of the outside of described piezoelectric device, formed the metal level that has greater than the thickness of the opening size in described slit.
The present invention's 2 piezoelectric device is based on the present invention's 1 piezoelectric device, it is characterized in that having the next door, and this next door is configured in the described slit, has dwindled the opening size in this slit, and be centered around at least described excitation electrode near.
2 the piezoelectric device that the present invention's 3 piezoelectric device is based on the present invention is characterized in that, described next door is formed on the periphery of a side interarea of described piezoelectric vibration device at least.
The present invention's 4 piezoelectric device is based on the present invention's 2 or 3 piezoelectric device, it is characterized in that, each side of described piezoelectric vibration device is with roughly consistent mutually with the outer face in corresponding described next door, this each side.
The present invention's 5 piezoelectric device is based on the present invention's 2 piezoelectric device, it is characterized in that, described next door is formed on the upper surface of the described printed circuit board (PCB) corresponding with the periphery of a side interarea of described piezoelectric vibration device.
The present invention's 6 piezoelectric device is based on the present invention's 3 or 4 piezoelectric device, it is characterized in that, earthy described solder pad conducts by described next door and described metal level and described earthy pad, and has omitted the described metal bump on the earthy described solder pad.
The present invention's 7 piezoelectric device be based on the present invention 2 to 6 in any one piezoelectric device, it is characterized in that described next door is a photosensitive material.
The present invention's 8 piezoelectric device be based on the present invention 2 to 6 in any one piezoelectric device, it is characterized in that described next door is a metallic object.
The present invention's 9 piezoelectric device be based on the present invention 1 to 8 in any one piezoelectric device, it is characterized in that described metal level is formed by the metal multilayer film lamination.
The present invention's 10 piezoelectric device be based on the present invention 1 to 9 in any one piezoelectric device, it is characterized in that, cover the upper surface of described metal level with resin.
The present invention's 11 piezoelectric device is based on the present invention's 10 piezoelectric device, it is characterized in that, implements mark at the upper surface of described resin.
Description of drawings
Fig. 1 is the sectional arrangement drawing of structure of the surface acoustic wave device of expression the present invention the 1st execution mode.
Fig. 2 is the vertical section key diagram with the formation processing modularity of metal level of the present invention.
Fig. 3 is the sectional arrangement drawing of structure of the surface acoustic wave device of expression the present invention the 2nd execution mode.
Fig. 4 is the partial longitudinal section of structure of the variation of expression the 2nd execution mode.
Fig. 5 is the sectional arrangement drawing of structure of the surface acoustic wave device of expression the present invention the 3rd execution mode.
Fig. 6 is the sectional arrangement drawing of structure of the surface acoustic wave device of expression the present invention the 4th execution mode.
Fig. 7 is a sectional arrangement drawing of representing the structure of surface acoustic wave device in the past.
Fig. 8 (a) and (b) be the key diagram that the manufacture method of surface acoustic wave device in the past is described.
Embodiment
Below, according to illustrated embodiments of the present invention, the present invention is described in detail.
Fig. 1 is the sectional arrangement drawing of expression as the structure of the surface acoustic wave device of the piezoelectric device of the present invention's the 1st execution mode.
The surface acoustic wave device of the 1st execution mode comprises: for example by LiTaO
3The piezoelectric substrate 1 that (lithium tantalate) constitutes; By excitation electrode (comb electrode) 2a on the side interarea (lower surface) that is formed on this piezoelectric substrate 1 and the piezoelectric vibration device (hereinafter referred to as " SAW chip ") 3 that constitutes from the solder pad 2b that this excitation electrode 2a extends; With dispose the SAW chip at upper surface and install with pad electrode 5 and earthy pad 6, and have the tabular printed circuit board (PCB) 4 of outer electrode 7 at lower surface.For the slit 8 of the regulation of being separated by in the gap of the lower surface of SAW chip 3 and the upper surface of printed circuit board (PCB) 4 is electrically connected both and mechanical fixation (flip-chip installation), by being fixed on the metal boss 11 on the solder pad 2b, conduct with pad electrode 5 formations.From the upper surface of SAW chip 3 and four sides to the upper surface of these SAW chip 3 unduplicated printed circuit board (PCB)s 4, formation is than the metal level 9 of the height height (thick) in slit 8, for example be aluminium lamination, and make earthy pad 6 and metal level 9 conductings (having shield effectiveness) on the position of not repeating with the SAW chip that is configured in printed circuit board (PCB) 4 upper surfaces.And,, preferably form the resin component 10 of this face of covering at the upper surface of metal level 9 for mechanical fixation intensity and the protection metal level 9 that strengthens SAW chip 3 and printed circuit board (PCB) 4.In addition, the upper surface of resin component 10 can the labeled surface acoustic wave device the visible mark of outer electrode direction, specification etc.
Fig. 2 is the sectional arrangement drawing with the formation technology patternization of metal level of the present invention.
In order to make metal level 9 sealing off gap 8, promptly, space (opening in slit 8) for the upper surface that makes lower surface periphery that metal level 9 covers SAW chips 3 and the printed circuit board (PCB) 4 relative with it, under the situation of for example vacuum evaporation, be arranged to make roughly quadrature of the upper surface of SAW chip 3 and vapor deposition source.In the early stage, As time goes on the upper surface formation film like (21a) at SAW chip 3 and printed circuit board (PCB) 4 becomes the layer (21b) that thickness increases, and finally becomes the layer (21c) that covers opening.That is, form thick film (thickness is 15 to 40 μ m) with thickness bigger than open height (width) size in slit 8.
Printed circuit board (PCB) 4 for example is made of pottery, have pad electrode 5 and earthy pad 6 that is formed on upper surface and a plurality of outer electrodes that are formed on lower surface (install and use electrode) 7, form the wiring of regulation by pad electrode 5, earthy pad 6 and outer electrode 7.Particularly the outer electrode with earthy pad 6 conductings becomes grounding electrode.
According to the present invention, can implement the installation to the SAW of printed circuit board (PCB) 4 chip 3, the formation of metal level 9 and the formation of resin component 10 by batch process.Promptly, be formed on pad electrode group and earthy pad group on the large-area printed circuit board (PCB) mother metal at subregion, flip-chip is installed SAW chip 3 respectively on each pad electrode, once property formation metal level 9 and resin component on the installed surface of this printed circuit board (PCB) mother metal, promptly, make the assembly substrate that a plurality of surface elasticity wave apparatus are set continuously, form monolithic by cutting then, produce a plurality of surface acoustic wave devices thus.Therefore, can improve the production of surface acoustic wave device.
Fig. 3 is the sectional arrangement drawing of expression as the structure of the surface acoustic wave device of the piezoelectric device of the 2nd execution mode of the present invention.
The difference of the surface acoustic wave device of the 2nd execution mode and the 1st execution mode is, formed to be used for part and to dwindle the next door 31 of the open height (width) in slit 8.By centering on excitation electrode 2a and solder pad 2b, it is desirable on the lower surface periphery of SAW chip 33 (the SAW chip 3 that is equivalent to Fig. 1), form next door 31, the open height (width) of dwindling slit 8 is (when the flip-chip of SAW chip 33 is installed, the upper surface of the lower surface in next door 31 and printed circuit board (PCB) 4 does not form interference, and has the gap of the atmosphere of the inboard (below of excitation electrode) that is used to replace next door 31.), can do the metal level 39 of present embodiment thinlyyer than the metal level 9 of above-mentioned execution mode, help to reduce the formation time of metal level 39 thus and reduce employed filmogen.
The formation method in next door 31 is as follows, at first form respectively the conglomerate that is formed on the next door 31 of excitation electrode on the side interarea of large-scale piezoelectric substrate and solder pad group around subregion, the conglomerate in this next door 31, consider productivity, it is desirable to by making the subregion that comprises excitation electrode and solder pad group carry out the coating of insulative resin or printing with exposing, wait based on the adhering to of the inorganic material (for example silica etc.) of PVD or CVD, based on the formation of the metal film of galvanoplastic or lift method, based on the printing of conductive paste or coating and form.After having formed metal bump 11 on each solder pad group, cut off by assigned position at large-scale piezoelectric substrate, obtain to be provided with SAW chip 33 around the next door 31 of excitation electrode and solder pad.
In addition, using electric conducting material to form under the situation in next door 31, as shown in Figure 4, prolongation to the inside forms next door 41 and cuts off in the position of regulation, so that cover the part of the earthy solder pad 42b that extends to the piezoelectric substrate periphery.Like this, make the next door 41 with solder pad 42b conducting form the state that exposes in the side of SAW chip, when the SAW chip of this state is installed on the printed circuit board (PCB) 44, and after using metal level 49 sealings, metal level 49 and solder pad 42b conducting, and contact with the next door 41 of exposing in the side of SAW chip 43.Therefore, earthy pad 46 conducts by next door 41 formations with solder pad 42b.Expose side if make in this wise the next door 41 that conducts with solder pad 42b at SAW chip 43, and use metal film to seal this sidewall, then no longer need to be used to connect the metal bump 11 of solder pad 42b and the pad electrode 5 bonding with this metal bump, improve the degree of freedom of the circuitous pattern design of SAW chip 43 and printed circuit board (PCB) 4, helped realizing the further miniaturization of surface acoustic wave device.
Fig. 5 is the sectional arrangement drawing of expression as the structure of the surface acoustic wave device of the piezoelectric device of the present invention's the 3rd execution mode.
The difference of the surface acoustic wave device of the 3rd execution mode and the 2nd execution mode is, is formed for part at the upper surface of printed circuit board (PCB) 54 and dwindles the next door 51 of the open height (width) in slit 8.Promptly, form next door 51 by upper surface at the printed circuit board (PCB) 54 relative with the lower surface periphery of SAW chip 3, the open height (width) of dwindling slit 8 is (when the flip-chip of SAW chip 3 is installed, the lower surface in next door 51 and the upper surface of printed circuit board (PCB) 54 are not disturbed, and the gap with atmosphere of the inboard (below of excitation electrode) that is used to replace next door 51), can form the thickness of the metal level 59 of present embodiment thinlyyer, help reducing formation time and employed filmogen than the metal level 9 of the execution mode of Fig. 1.Next door 51 is formed on particularly with pad electrode 5 and earthy pad 6 under the situation on any one electrode position contacting, it is desirable to dispose plating aluminium oxide film or insulative resin, in addition, next door 51 is formed on these discontiguous locational situations under, also can use conductive material.
Fig. 6 is the sectional arrangement drawing of expression as the structure of the surface acoustic wave device of the piezoelectric device of the present invention's the 4th execution mode.
The difference of the surface acoustic wave device of the 4th execution mode and the 2nd and the 3rd execution mode is, formed at the upper surface of the lower surface periphery of SAW chip and the printed circuit board (PCB) relative with this lower surface periphery to be used for part and to dwindle the next door of the open height (width) in slit 8.Promptly, form next door 61a and form next door 61b at the lower surface periphery of SAW chip 63 at the upper surface of the printed circuit board (PCB) 64 relative with next door 61a, open height (width) by dwindling slit 8 is (when flip-chip is installed SAW chip 63, the lower surface of next door 61a and the upper surface of described next door 61b are not disturbed, and have the gap of the atmosphere of the inboard (below of excitation electrode) that is used to replace next door 61a and 61b.), the thickness of metal level 69 can be done thinner than the metal level 9 of Fig. 1, help shortening the formation time of metal level 69 and reduce employed filmogen.Under the situation that has formed next door 61a with electric conducting material, preferably form next door 61b with insulating material.
Employed conductivity and insulative resin can be Thermocurable, thermoplasticity, photosensitive any one resin among next door 31,51,61a, the 61b.
More than, use the piezoelectric substrate constitute by lithium tantalate to describe the present invention, but the present invention equally also go for quartz, the piezoelectric that cubic sour lithium, lithium niobate, LGS etc. can the exciting surface acoustic waves.
Though be in excitation electrode, to use comb electrode to describe the present invention, also can also have the excitation electrode of reflector except having comb electrode.In addition, though be to use so-called SAW filter to describe the present invention, also can be the SAW resonator.
Printed circuit board (PCB) of the present invention not only can be a ceramic circuit board, also can be the resin substrate of expoxy glass, silicon etc.
Piezoelectric device of the present invention is in the piezoelectric device of the encapsulation technology (CSP structure) of pursuing miniaturization, slimming, and it is easy to have a manufacturing process, and can realize keeping the advantage of sealing of the atmosphere of excitation electrode.
Claims (11)
1. piezoelectric device comprises: piezoelectric vibration device, it has piezoelectric substrate at least, be formed on the side interarea of this piezoelectric substrate excitation electrode and from the extended solder pad of this excitation electrode; With the tabular printed circuit board (PCB), the surface is provided with pad electrode and the earthy pad that described piezoelectric vibration device is installed usefulness thereon, and has outer electrode at its lower surface, by described solder pad is connected through the metal boss with described pad electrode, at the upper surface of described printed circuit board (PCB),, fixed described piezoelectric vibration device with the slit that this upper surface is separated by and is stipulated, it is characterized in that
On whole of the outside of described piezoelectric device, formed the metal level that has greater than the thickness of the opening size in described slit.
2. piezoelectric device according to claim 1 is characterized in that having the next door, and this next door is configured in the described slit, has dwindled the opening size in this slit, and be centered around at least described excitation electrode near.
3. piezoelectric device according to claim 2 is characterized in that, described next door is formed on the periphery of a side interarea of described piezoelectric vibration device at least.
4. according to claim 2 or 3 described piezoelectric devices, it is characterized in that each side of described piezoelectric vibration device is with roughly consistent mutually with the outer face in corresponding described next door, this each side.
5. piezoelectric device according to claim 2 is characterized in that, described next door is formed on the upper surface of the described printed circuit board (PCB) corresponding with the periphery of a side interarea of described piezoelectric vibration device.
6. according to claim 3 or 4 described piezoelectric devices, it is characterized in that earthy described solder pad conducts by described next door and described metal level and described earthy pad, and omitted the described metal bump on the earthy described solder pad.
7. according to any described piezoelectric device in the claim 2 to 6, it is characterized in that described next door is a photosensitive material.
8. according to any described piezoelectric device in the claim 2 to 6, it is characterized in that described next door is a metallic object.
9. according to any described piezoelectric device in the claim 1 to 8, it is characterized in that described metal level is formed by the metal multilayer film lamination.
10. according to any described piezoelectric device in the claim 1 to 9, it is characterized in that, cover the upper surface of described metal level with resin.
11. piezoelectric device according to claim 10 is characterized in that, implements mark at the upper surface of described resin.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP152299/2003 | 2003-05-29 | ||
| JP2003152299 | 2003-05-29 | ||
| JP409796/2003 | 2003-12-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1784829A true CN1784829A (en) | 2006-06-07 |
Family
ID=36773876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004800126470A Pending CN1784829A (en) | 2003-05-29 | 2004-05-26 | Piezoelectric device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1784829A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101110579B (en) * | 2006-07-21 | 2010-08-18 | 富士通媒体部品株式会社 | Surface acoustic wave device |
| CN101890605A (en) * | 2010-07-08 | 2010-11-24 | 株洲南车时代电气股份有限公司 | Power semiconductor chip welding device |
| CN102694526A (en) * | 2011-03-22 | 2012-09-26 | 太阳诱电株式会社 | Electronic component, electronic device, and method for manufacturing the electronic component |
| CN113541627A (en) * | 2020-04-13 | 2021-10-22 | 三安日本科技株式会社 | Elastic wave device package and method of manufacturing the same |
| WO2023202724A1 (en) * | 2022-04-18 | 2023-10-26 | 锐石创芯(重庆)科技有限公司 | Chip packaging structure and method |
-
2004
- 2004-05-26 CN CNA2004800126470A patent/CN1784829A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101110579B (en) * | 2006-07-21 | 2010-08-18 | 富士通媒体部品株式会社 | Surface acoustic wave device |
| CN101890605A (en) * | 2010-07-08 | 2010-11-24 | 株洲南车时代电气股份有限公司 | Power semiconductor chip welding device |
| CN101890605B (en) * | 2010-07-08 | 2014-01-08 | 株洲南车时代电气股份有限公司 | Power semiconductor chip welding device |
| CN102694526A (en) * | 2011-03-22 | 2012-09-26 | 太阳诱电株式会社 | Electronic component, electronic device, and method for manufacturing the electronic component |
| CN113541627A (en) * | 2020-04-13 | 2021-10-22 | 三安日本科技株式会社 | Elastic wave device package and method of manufacturing the same |
| WO2023202724A1 (en) * | 2022-04-18 | 2023-10-26 | 锐石创芯(重庆)科技有限公司 | Chip packaging structure and method |
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