CN1783486A - Multi-chip module integrated with RF property - Google Patents

Multi-chip module integrated with RF property Download PDF

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Publication number
CN1783486A
CN1783486A CNA2005101028931A CN200510102893A CN1783486A CN 1783486 A CN1783486 A CN 1783486A CN A2005101028931 A CNA2005101028931 A CN A2005101028931A CN 200510102893 A CN200510102893 A CN 200510102893A CN 1783486 A CN1783486 A CN 1783486A
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CN
China
Prior art keywords
chip module
module according
substrate
chip
active circuit
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Granted
Application number
CNA2005101028931A
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Chinese (zh)
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CN100463170C (en
Inventor
裴孝根
边宇镇
金南兴
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Samsung Electro Mechanics Co Ltd
Renault SamSung Motors Inc
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Samsung Electro Mechanics Co Ltd
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Publication of CN1783486A publication Critical patent/CN1783486A/en
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Publication of CN100463170C publication Critical patent/CN100463170C/en
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

The invention discloses a multi-chip module including plurality of inactive elements and showing better mechanical performance. The multi-chip module includes: A lamination base plate based on the organic material is which inserting high dielectric constant ceramic layer; At least one radio frequency/intermediate frequency active circuit chip which is connected to the base plate and disposed to carrying out two or more radio frequencies/intermediate frequency function; plurality of inactive elements which is connected to the base plate.

Description

Be integrated with the multi-chip module of RF performance
Correlation technique and cross reference thereof
The application based on and require the priority of the korean application submitted on December 3rd, 2004 2004-101410 number, its full content is hereby expressly incorporated by reference.
Technical field
The present invention relates to multi-chip module (module), relate in particular to the multi-chip module comprising large value capacitor, this multi-chip module demonstrates the favorable mechanical performance, for example high flexural modulus, and can carry out two or more different radio frequency functions.
Background technology
Multi-chip module (multiple chip module, be abbreviated as MCM) be the independent electronic packaging, it can comprise a plurality of exposed and/or packaged integrated circuits chip and a plurality of passive components, for example resistor, capacitor and inductor, and all these is connected to interconnect substrates.MCM comprises the multilayer interconnection substrate that is provided with a plurality of exposed active circuit chips and other element.Because when reducing the size of MCM chip component, there is the electric current restriction,, perhaps forms or be embedded in the substrate, to reduce the erection space of element or chip so passive component or active circuit chip use the line attachment to be connected to each other with the form of bare chip.In addition, reducing the quantity that is installed to the element on the substrate makes it possible to the compacter MCM of more low-cost manufacturing.And, comprise that in MCM line attachment (wire bond) and passive component make the minimizing of distribution length and number of connection.Because these reasons obtain improved radio frequency reliability among the MCM.
The traditional MCM that is used for the radio frequency/intermediate frequency application adopts the single interconnect substrates of being made by the homogenous material of or ceramic material organic such as lamination, and one or more active circuit chips are connected with the single interconnect substrates of many passive components and this.In traditional MCM, use the lamination organic material as substrate, because the low-k of baseplate material makes it be difficult to comprise capacity cell (for example, capacitor) in substrate.Simultaneously, use such as LTCC (low temperature cofired ceramic, be abbreviated as LTCC) ceramic material help in substrate, to comprise the capacitive character passive component as substrate, but because the inherent characteristic of baseplate material, substrate is easy to embrittlement, and this has just limited the size of ceramic substrate.
Fig. 1 shows the cross-sectional view strength of parts of traditional MCM.With reference to figure 1, MCM100 comprises the active circuit chip 50 that is fit to be attached on the bare chip attachment pad (die attach pad) 52.Forming a plurality of through hole 54a and 54b by substrate 60 inside of making such as the homogenous material of organic or ceramic inorganic material.Through hole 54a and 54b extend to one or more conductive pad 58a and the 58b that the basal surface at substrate 60 forms from die attach pad.Through hole 54a and 54b are coated with or are filled with metal material, and therefore conduct electricity.In addition, active circuit chip 50 can be electrically connected to two ends and chip connection gasket 56 and 57 of die attach pad 52 by line attachment 59 and 61.Through hole 54a and 54b are as heat through-hole that is used to conduct heat and the electrical connection through hole that is used for radio frequency ground connection.Extra through hole 55a and 55b can be connected respectively on chip connection gasket 56 and 57.Although only show an active circuit chip 50 in the drawings, the other active circuit chip with different radio frequency function can be installed on substrate 60.
Yet,, be difficult to obtain simultaneously in substrate, to comprise large value capacitor and favorable mechanical performance, for example high flexural modulus because the substrate of MCM is to be made by the homogenous material of or ceramic inorganic material organic such as lamination.That is,, can obtain higher flexural modulus, but dielectric constant is low when substrate 60 is to be pressed with the machine material when making by the simple layer such as FR4.Therefore, when capacitive character passive component (for example capacitor) when being embedded in the substrate, baseplate material can not be used as the dielectric substance of element.
Summary of the invention
Therefore, consider that the problems referred to above propose the present invention, and the purpose of this invention is to provide multi-chip module that it has the good mechanical properties such as high flexural modulus, and when can comprise big capacity passive component therein, realize two or more radio-frequency enabled.
In order to realize above-mentioned purpose of the present invention, a kind of multi-chip module is provided, it comprises: based on the laminated substrate of organic material, wherein be inserted with the high-dielectric-constant ceramics layer; At least one radio frequency/intermediate frequency active circuit chip is connected to substrate and is set to carry out a plurality of radio frequency/intermediate frequency functions; And at least one passive component, be connected to substrate.Mode that can integrated two or more radio frequency/intermediate frequency functions with multi-chip module is provided with substrate.
In one embodiment of the invention, multi-chip module comprises two or more active circuit chips, and this active circuit chip has different electrical characteristics, for example, and different radio frequency/intermediate frequency functions.In optional embodiment of the present invention, multi-chip module comprises a single active circuit chip, and this chip has and is suitable for the second portion carrying out the first of the first radio frequency/intermediate frequency function and be suitable for carrying out the second radio frequency/intermediate frequency function.In this embodiment, first and second parts are electrically connected to separately independently ground plane.Ground plane can be separated from each other physically.
In another embodiment of the present invention, substrate surface thereon is provided with die attach pad and its lower surface is provided with the conductive earthing pad, and one of active circuit chip is connected to die attach pad and is electrically connected and is thermally connected to the conductive earthing pad by conductive via.
Passive component can be connected to substrate by surface mounting technology.Under this kind situation, the passive component of mounted on surface can be electrically connected to the mounted on surface pad that forms on substrate.In addition, passive component can be embedded in the substrate.For example, can be set to have the embedding capacitor that is embedded in the substrate by multi-chip module.In this case, insert the dielectric layer of the high-dielectric-constant ceramics layer of substrate as capacitor.Multi-chip module can comprise resistor and the inductor that embeds substrate.
In addition, multi-chip module can comprise the printed inductance element, and its inductance can be conditioned.In this case, the printed inductance element comprises spiral inductance body, conductive pad and the inductance body is electrically connected to the line attachment of pad that wherein, the inductance body can have two or more contact points.Can regulate the inductance of inductance element by changing contact point.
Laminated substrate based on organic material can be made by FR4 or polytetrafluoroethylene.The high-dielectric-constant ceramics layer preferably includes ferroelectric material, for example, and barium titanate (BaTiO 3).In this case, preferably add transition temperature material for transfer (SrTiO for example 3Or BaSnO) to barium titanate.The interpolation of transition temperature material for transfer has improved the thermal stability of high-dielectric-constant ceramics layer.
According to multi-chip module of the present invention, make multi-chip module demonstrate favorable mechanical performance (for example high flexural modulus) based on the laminated substrate of organic material, and having of high-dielectric-constant ceramics layer help comprise big capacity passive component in the substrate.For this reason, multi-chip module of the present invention comprises that insertion is based on the high-dielectric-constant ceramics layer in the laminated substrate of organic material.In addition, single active circuit chip or two or more active circuit chips that is connected to substrate can be carried out different radio frequency/intermediate frequency function.
Description of drawings
In conjunction with the accompanying drawings, from following detailed, can more be expressly understood above and other objects of the present invention, characteristic and other advantage, wherein:
Fig. 1 is the schematic cross sectional views of traditional multi-chip module;
Fig. 2 is the schematic cross sectional views of multi-chip module according to an embodiment of the invention;
Fig. 3 is the perspective schematic view of multi-chip module according to another embodiment of the present invention; And
Fig. 4 is the vertical view of the printed inductance element that uses in can multi-chip module according to another embodiment of the present invention.
Embodiment
Below with reference to the accompanying drawings embodiments of the invention are specifically described.Yet, can easily carry out various modifications, and scope of the present invention is not limited to the following examples to embodiments of the invention.It is in order to make those skilled in the art understand the present invention better that these embodiment are provided.In the accompanying drawings, for the sake of clarity, the shape and size of element have been amplified.
Fig. 2 is the schematic cross sectional views of multi-chip module according to an embodiment of the invention.As shown in Figure 2, multi-chip module 200 comprises two or more active circuit chip 150a and 150b that are installed in based on the laminated substrate 160 of organic material.Two or more active circuit chip 150a and 150b can be the devices of carrying out different radio frequency/intermediate frequency function.Each active circuit chip can adopt the form of bare chip 150b and packaged chip 150a.Be used for based on the material of the laminated substrate 160 of organic material being for example RF4 or polytetrafluoroethylene.
The active circuit chip 150b of bare chip form is attached on the suitable die attach pad 170.For with active circuit chip 150b ground connection, active circuit chip 150b can be connected to the two ends of die attach pad 170 by line attachment 159.The conductive pad 165 that forms on the basal surface of substrate 160 and 166 is used as earthing potential and is connected on the motherboard.Conductive via 154c provides the ground connection passage and the passage of heat from active circuit chip 150b to motherboard.In addition, form the ground plane that separates, to realize the radio frequency insulation in (or between the difference in functionality of single active circuit chip part) between the active circuit chip in the inside of substrate 160.Active circuit chip 150b can be electrically connected to the contact mat that forms by one of line attachment 159 on substrate 160.Contact mat can be connected to another metal wire by via hole.Die attach pad 170 can be connected to passive component by via hole 155.
The active circuit chip 150a of encapsulation can be provided with lead-in wire 151, and it can be electrically connected to the outside.Active circuit chip 150a can 151 be connected to the metal wire that forms by going between on substrate.Lead-in wire 151 is connected to lead-in wire contact mat 162a and the 162b in the upper surface formation of substrate 160, and the contact mat 162a that goes between then can be connected to other metal wire or the via hole that is connected with circuit network with 162b.In addition, penetrating the upper surface of substrate 160 and the through hole 154a and the 154b of lower surface can form below active circuit chip 150a.Through hole can be electrically connected to the passive component of embedding.For example, through hole 154a and 154b can be connected to resistor 162, inductor 163 etc. by the proper metal line.
In the above-described embodiments, use two or more active circuit chip 150a and 150b to realize different radio frequency/intermediate frequency functions.In optional embodiment, can use single active circuit chip to realize different radio frequency/intermediate frequency functions.Especially, single active circuit chip has the second portion that is suitable for carrying out the first of the first radio frequency/intermediate frequency function and is suitable for carrying out the second radio frequency/intermediate frequency function.In this embodiment, first and second parts are electrically connected to separately independently ground plane.Ground plane can be separated from each other physically.
As shown in Figure 2, the laminated substrate 160 that high-dielectric-constant ceramics layer 201 is inserted based on organic material.Ceramic layer 201 can be used to guarantee the capacity of the passive component that embeds.For example, at the upper surface and the lower surface formation conductive layer 156 and 157 of ceramic layer 201, to form the electric capacity that embeds.In this mode, the internal layer of substrate is used as the parts of passive component, has therefore reduced the quantity of surface mounted component, and has made multi-chip module compacter.In addition, use the dielectric layer that is used for capacitor in the inner high-dielectric-constant ceramics layer that forms 201 conduct of substrate, make capacitor have more high power capacity.In addition, because substrate made by organic material, so demonstrate high flexural modulus basically.Therefore, the substrate 160 that a plurality of elements and device be installed on it demonstrates the favorable mechanical performance.
High-dielectric-constant ceramics layer 201 preferably comprises ferroelectric material, for example barium titanate (BaTiO 3).Especially, ceramic layer 201 can be formed by composite material, and this composite material obtains by barium titanate powder is distributed in the epoxy resin.In addition, ceramic layer 201 can be formed by the polymer-ceramic composites that comprises barium titanate and polyimides.Preferably add transition temperature material for transfer, for example SrTiO to the composite material that comprises barium titanate 3Or BaSnO.Can outside the scope of application, change the transition temperature of barium titanate by material for transfer.In addition, add the thermal stability that the transition temperature material for transfer has improved ceramic layer 201.
Fig. 3 is the perspective view of multi-chip module according to another embodiment of the present invention.About Fig. 3, a plurality of elements are installed on the surface of substrate 160.The lip-deep active circuit chip 150a and the 150b that are installed in substrate 160 can be connected to the lead-in wire contact mat by chip lead, or are connected to the lead contact mat 180 that forms by line attachment 159 on the surface of substrate 160.The passive component 220 that can connect mounted on surface by mounted on surface pad 230.Can form a large amount of via holes 190 and 195 on the surface of substrate 160.Via hole 190 and 195 provides electrical connection.The via hole 190 that centers on the periphery formation of substrate 160 can be used to make multi-chip module 200 to avoid radio frequency interference.Multi-chip module 200 can be provided with the metal cap 250 that is used for radio frequency isolation or EMI shielding.The active circuit part that metal cap 250 can use via hole 190 and conducting ring insulation and shielding to form on substrate 160, and make ground plane separate (not shown), wherein via hole and conducting ring all are that the periphery that centers on substrate 160 forms.
Although do not illustrate in the perspective view of Fig. 3, a plurality of passive components can be embedded into substrate 160.As previously mentioned, the high-dielectric-constant ceramics layer is inserted substrate 160.Ceramic layer can be used to make passive component have high-k.In addition, can on substrate, form a plurality of printing passive components.For example, can on substrate 160, form the printed inductance element.
Fig. 4 shows the printed inductance element of the multi-chip module that can be used for according to another embodiment of the present invention.Inductance element 1100 is set to have the controllable impedance value.Especially, spiral inductance body 1060 is connected to conductive pad 1050 by line attachment 1010.Inductance body 1060 has a plurality of line attachment contact points 1061,1062 and 1063.Line attachment 1010 can be connected to suitable line attachment contact point, to regulate the inductance of inductance element.Inductance body 1060 can be electrically connected to conductive via 1020.
Although invention has been described at this with reference to previous embodiment and accompanying drawing, scope of the present invention limits by appended claim.Therefore, it should be appreciated by those skilled in the art that and under the situation that does not break away from the spirit of the present invention that discloses in the claim, can make multiple replacement, modification and change.
As can be seen from the above description, because multi-chip module of the present invention is included in the laminated substrate based on organic material that wherein inserts the high-dielectric-constant ceramics layer, multi-chip module can comprise big capacity passive component therein, and has shown improved mechanical performance.
In addition, because multi-chip module of the present invention comprises single substrate, so it can realize high performance different radio frequency/intermediate frequency function.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (15)

1. multi-chip module comprises:
Based on the laminated substrate of organic material, wherein be inserted with the high-dielectric-constant ceramics layer;
At least one radio frequency/intermediate frequency active circuit chip is connected to described substrate and quilt
Be set to carry out a plurality of radio frequency/intermediate frequency functions; And
At least one passive component is connected to described substrate.
2. multi-chip module according to claim 1, wherein, described multi-chip module comprises that two or more have the active circuit chip of different radio frequency/intermediate frequency function and different electrical characteristics.
3. multi-chip module according to claim 1, wherein, described multi-chip module comprises an active circuit chip, and described active circuit chip has the second portion that is suitable for carrying out the first of the first radio frequency/intermediate frequency function and is suitable for carrying out the second radio frequency/intermediate frequency function.
4. multi-chip module according to claim 3, wherein, described first and second parts are electrically connected to separately independently ground plane.
5. multi-chip module according to claim 1, wherein, described substrate surface thereon is provided with die attach pad and its lower surface is provided with the conductive earthing pad; And one of described active circuit chip is connected to described die attach pad, and is electrically connected and is thermally connected to described conductive earthing pad by conductive via.
6. multi-chip module according to claim 1, wherein, at least one in the described passive component is connected to described substrate by mounted on surface.
7. multi-chip module according to claim 1, wherein, at least one in the described passive component is embedded into described substrate.
8. multi-chip module according to claim 1, wherein, described high-dielectric-constant ceramics layer is used as the dielectric layer of the capacitor of embedding.
9. multi-chip module according to claim 1, wherein, described passive component comprises resistor and the inductor that embeds described substrate.
10. multi-chip module according to claim 1, wherein, described passive component comprises the printed inductance element, the inductance of described inductance element can be conditioned.
11. multi-chip module according to claim 10, wherein, described printed inductance element comprises spiral inductance body, conductive pad and described inductance body is electrically connected to the line attachment of described conductive pad; Described inductance body has two or more line attachment contacts.
12. multi-chip module according to claim 1, wherein, described laminated substrate based on organic material is made by FR4 or polytetrafluoroethylene.
13. multi-chip module according to claim 1, wherein, described high-dielectric-constant ceramics layer comprises ferroelectric material.
14. multi-chip module according to claim 1, wherein, described high-dielectric-constant ceramics layer comprises barium titanate (BaTiO 3).
15. multi-chip module according to claim 14, wherein, described high-dielectric-constant ceramics layer also comprises SrTiO 3Or BaSnO.
CNB2005101028931A 2004-12-03 2005-09-14 Multi-chip module integrated with RF property Expired - Fee Related CN100463170C (en)

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KR1020040101410 2004-12-03
KR1020040101410A KR100638655B1 (en) 2004-12-03 2004-12-03 Multiple chip module having integrated rf capability

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CN100463170C CN100463170C (en) 2009-02-18

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110797616A (en) * 2019-11-12 2020-02-14 扬州海科电子科技有限公司 Multilayer digital-analog mixed pressing plate based on substrate integrated coaxial line structure

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Publication number Priority date Publication date Assignee Title
JP2725637B2 (en) * 1995-05-31 1998-03-11 日本電気株式会社 Electronic circuit device and method of manufacturing the same
WO2002096166A1 (en) * 2001-05-18 2002-11-28 Corporation For National Research Initiatives Radio frequency microelectromechanical systems (mems) devices on low-temperature co-fired ceramic (ltcc) substrates
US6483404B1 (en) * 2001-08-20 2002-11-19 Xytrans, Inc. Millimeter wave filter for surface mount applications
JP3890947B2 (en) * 2001-10-17 2007-03-07 松下電器産業株式会社 High frequency semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110797616A (en) * 2019-11-12 2020-02-14 扬州海科电子科技有限公司 Multilayer digital-analog mixed pressing plate based on substrate integrated coaxial line structure
CN110797616B (en) * 2019-11-12 2021-11-09 扬州海科电子科技有限公司 Multilayer digital-analog mixed pressing plate based on substrate integrated coaxial line structure

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KR100638655B1 (en) 2006-10-30
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