CN1776442A - Method for detecting gallium nitride base LED quality good or not - Google Patents
Method for detecting gallium nitride base LED quality good or not Download PDFInfo
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- CN1776442A CN1776442A CN 200510110630 CN200510110630A CN1776442A CN 1776442 A CN1776442 A CN 1776442A CN 200510110630 CN200510110630 CN 200510110630 CN 200510110630 A CN200510110630 A CN 200510110630A CN 1776442 A CN1776442 A CN 1776442A
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Abstract
Based on piezo effect and quanta points structure in InN class existed in semiconductor LED in GaN substrate, through measurement under different injected current, the invention determines good or bad performance of LED from quantity of blue shift of radiation peak position. Under same injected current, larger blue shift of radiation peak position means higher efficiency of injecting current, and smaller loss of current at chip, electrodes, bracket and leading out wires. Larger blue shift of radiation peak position also indicates better technical procedures for fabricating LED including substance development, manufacture of electrodes, and encapsulation control etc. and higher quality of products. Features are: easy of operation and easy of batch use.
Description
Technical field
The present invention relates to the detection method of semiconductor light-emitting-diode (LED), be meant the method for the basic LED quality good or not of a kind of detection gallium nitride (GaN) especially.
Background technology
Efficient indigo plant, green glow and the white light emitting diode of being made by the GaN base semiconductor material has distinguishing features such as long, energy-conservation, environmental protection of life-span, be widely used in fields such as large-sized solor demonstration, automotive lighting, traffic signals, multimedia display and optical communication, particularly had wide development potentiality at lighting field.
High-quality semiconductor light-emitting-diode is the precondition that it is used widely.At present, the parameter that is used for weighing a LED quality good or not is a lot, comprise electricity conversion, interior external quantum efficiency, light output efficiency, luminous intensity, power consumption, maximum forward and inverse current voltage, spectral half width, visual angle, luminous efficiency etc., and wherein the most important thing is external quantum efficiency, it has directly reflected the quality of light emitting diode performance.The external quantum efficiency of light emitting diode can be expressed as the product of internal quantum efficiency and electric current injection efficiency and light output efficiency.Internal quantum efficiency has reflected the height of device material growth quality; Light output efficiency and device geometric configuration are closely related; The electric current injection efficiency has been reacted PN junction material layer, support, electrode, the caused current loss situation of lead-in wire for by the electronic current of LED P N knot and the ratio of total current, is directly connected to the height of external quantum efficiency.Electric current injection efficiency height, the charge carrier that is injected in the PN junction quantum well is just many, and the probability that radiation recombination takes place is just high, and internal quantum efficiency is relatively just high.In suitability for industrialized production, have essentially identical growth course, geometric configuration and encapsulating material with series-produced LED device, the quality of LED device depends on the quality of the process that chip, electrode, support, lead-in wire etc. are relevant with current loss to a great extent, can be reflected by the injection efficiency of electric current.Therefore, for series-produced LED device, can electricity consumption flow the quality that the size of injecting efficient is tentatively weighed device quality.Can avoid the not only loaded down with trivial details but also complicated testing process of multinomial electricity optical parameter measurement.Any for this reason method that the electric current injection efficiency is effectively measured all is of great value, does not directly measure but still there is a kind of effective method at present.
Summary of the invention
Purpose of the present invention is exactly to propose a kind of direct measurement of passing through GaN base LED electric current injection efficiency, reaches the method for its quality good or not of fast detecting.
The present invention is by measuring GaN base LED under different injection currents, and the blue shift amount of luminous peak position is judged the quality of its performance.
Concrete technical scheme of the present invention is as follows:
1. sample GaN base LED is placed under the object lens of micro--Raman fluorescence spectrophotometer, energized makes LED luminous, and the mobile example platform makes the LED luminous beam aim at object lens, transfers to injection current minimum but still can be luminous, focus, object focal point is gathered on the LED light-emitting area.
2. the adjusting injection current increases gradually since 0, and every interval 500uA or 1mA gather a width of cloth electroluminescent spectrum by the ccd detector of spectrometer.
3. adopt Gaussian line shape to carry out match to the spectrum segment more than 2/3 numerical values recited that is positioned at peak value in each width of cloth spectrum of gathering then, read error, obtain its luminous accurately peak position so that reduce the peak position that noise brings effectively.
4. the injection current of a width of cloth electroluminescent spectrum of blue shift is taken place as the minimum detection electric current in luminous peak position for the first time, along with the increase gradually of injection current, when luminous peak position turns to the injection current of a width of cloth electroluminescent spectrum of red shift to be decided to be the maximum electric current that detects by blue shift.
5. blue shift amount Δ λ=maximum detects the luminous peak position of the luminous peak position one minimum detection electric current of electric current, and Δ λ is as the numerical value of judging GaN base LED quality good or not, and blue shift amount Δ λ is big more, and the luminescent properties of LED is good more, and the definite of its numerical value can decide as required.
The present invention is according to piezoelectric effect that exists in the GaN base semiconductor LED and InN class quantum-dot structure, reflects the quality of device quality by the height that detects the electric current injection efficiency.Because GaN base semiconductor material crystal structure symmetry is low and potential barrier and potential well material lattice constant do not match the piezoelectric polarization that exists spontaneous polarization and caused by stress in multi-quantum pit structure.The polarization charge that these two kinds of polarization effects produce is collected at the quantum well both sides, forms the powerful polarized electric field (about 3～4MV/cm) that points to the substrate direction.Under the effect of polarized electric field, the quantum well band structure changes triangle into as shown in Figure 1 by square, makes the luminous peak position red shift of LED, and radiation efficiency reduces, the Stark effect of so-called quantum limit that Here it is.When injection current, the charge carrier that is injected in the quantum well can form the direction electric field shielding opposite with polarized electric field, thereby weakens polarized electric field, makes the first intersubband transitions energy (E between conduction band and valence band in the quantum well
00) increase, the radiation transistion energy increases, luminous peak position blue shift, and radiation efficiency improves.Injection current varies in size, E in the quantum well
00Different (as shown in Figure 1), transition energy difference, the degree of luminous peak position blue shift are also just different.For the multi-quantum pit structure that has InN class quantum dot, when injection current increased, electronics can add to higher energy level after filling up low-lying level, radiation transistion can be increased, luminous peak position blue shift.Therefore, luminous peak position blue shift amount has reflected the size that is injected into electric current in the PN junction quantum well, just the size of injection efficiency.Injection efficiency is high more, the charge carrier that enters into quantum well is just many more, and the probability that radiation recombination takes place is also just big more, helps the raising of luminescence efficiency, illustrate also simultaneously that parts such as luminescence chip, support, lead-in wire are little to the loss of electric current, reflected that device has higher quality.
The present invention has simple to operate, and fireballing characteristics extremely are suitable for the GaN base semiconductor LED with batch large-scale production is carried out quality testing.
Description of drawings
Fig. 1 is the influence that injection current can be with quantum well;
Fig. 2 increases the spectrogram of blue shift with injection current for the luminous peak position of GaN base LED.
Embodiment
The present invention is described in further detail below by embodiment and accompanying drawing.
Select for use micro--Raman fluorescence spectrophotometer to measure the variation of luminous peak position.The ccd detector in the spectrometer and the object lens of different amplification help measuring the electroluminescent spectrum of LED under very low injection current.
Concrete measuring process is as follows:
1. the GaN base LED sample with present embodiment is positioned under the object lens, energized makes LED luminous, the mobile example platform is aimed at object lens with the LED luminous beam, transfer to injection current minimum but still can be luminous, select the object lens of different amplification for use, focus, object focal point is gathered on the LED light-emitting area, measure luminescent spectrum, the object lens that can obtain obvious luminous signal are as detecting the object lens that GaN base LED luminescent spectrum peak position changes.
2. injection current is increased gradually from 0, every interval 1mA gathers a width of cloth electroluminescent spectrum.
3. adopt Gaussian line shape to carry out match to the spectrum segment more than 2/3 numerical values recited that is positioned at peak value in the spectrum of being gathered, read error, obtain its luminous accurately peak position so that reduce the peak position that noise brings effectively.See the Gaussian line shape match spectrogram among Fig. 2, among the figure be present embodiment respectively at 5mA, 10mA, 20mA, the spectrogram when 30mA and 40mA injection current, their luminous peak position is respectively 470.46nm, 469.60nm, 468.78nm, 468.54nm and 468.68nm.
4. the injection current that luminous peak position is taken place blue shift at first is as the lowest detection electric current, and as can be seen from Figure 2 the minimum detection electric current is 5mA; Turn to the injection current of red shift to be decided to be the maximum electric current that detects by blue shift luminous peak position, maximum detection electric current is 30mA among Fig. 2, and then its detection range of current is 0～30mA.
5. determine the blue shift amount Δ λ of luminous peak position in detecting range of current.The peak position blue shift amount of GaN base LED in the injection current scope is 5～30mA is Δ λ=1.9nm among Fig. 2.
6. according to above 2-5 step, measure Δ λ respectively with series-produced GaN base LED.Determine that in the present embodiment Δ λ＞1.5nm is the product of function admirable, otherwise be substandard products.The blue shift amount of sample shown in Fig. 2 is 1.9nm, illustrates that these properties of product are relatively good.
The present invention be directed to the GaN base semiconductor LED.Measure the variation of its main light emission peak position for green glow, blue light-emitting diode; For white light emitting diode,, only need to measure the variation of its chip institute blue light-emitting peak position owing to be to use the blue chip excitated fluorescent powder luminous.
Above-described embodiment is only in order to illustrate technological thought of the present invention and characteristics; its purpose is to make those of ordinary skill in the art can understand content of the present invention and implements according to this; scope of the present invention also not only is confined to above-mentioned specific embodiment; be all equal variation or modifications of doing according to disclosed spirit, still be encompassed in protection scope of the present invention.
Claims (1)
1. method that detects gallium nitride base LED quality good or not is characterized in that concrete steps are as follows:
A. sample GaN base LED is placed under the object lens of micro--Raman fluorescence spectrophotometer, energized makes LED luminous, and the mobile example platform makes the LED luminous beam aim at object lens, transfers to injection current minimum but still can be luminous, focus, object focal point is gathered on the LED light-emitting area;
B. regulate injection current, increase gradually since 0, every interval 500uA or 1mA gather a width of cloth electroluminescent spectrum by the ccd detector of spectrometer;
C. adopt Gaussian line shape to carry out match to the spectrum segment more than 2/3 numerical values recited that is positioned at peak value in each width of cloth spectrum of gathering then, read error, obtain its luminous accurately peak position so that reduce the peak position that noise brings effectively;
D. the injection current of a width of cloth electroluminescent spectrum of blue shift is taken place as the minimum detection electric current in luminous peak position for the first time, along with the increase gradually of injection current, when luminous peak position turns to the injection current of a width of cloth electroluminescent spectrum of red shift to be decided to be the maximum electric current that detects by blue shift;
E. blue shift amount Δ λ=maximum detects the luminous peak position of the luminous peak position one minimum detection electric current of electric current, and Δ λ is as the numerical value of judging GaN base LED quality good or not, and blue shift amount Δ λ is big more, and the luminescent properties of LED is good more, and the definite of its numerical value can decide as required.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101109724B (en) * | 2007-08-16 | 2010-05-19 | 中国科学院上海技术物理研究所 | Method for detecting quantum dot density inside multiple quantum well light emitting diode |
| CN101196552B (en) * | 2007-12-07 | 2010-08-25 | 中国科学院上海技术物理研究所 | Method for judging existence of high-efficiency quantum structure in multi-quantum well LED materials |
| CN102721913A (en) * | 2012-06-13 | 2012-10-10 | 中国电子科技集团公司第五十五研究所 | In-wafer reliability screening method for GaN HEMT (High Electron Mobility Transistor) device |
| CN103529310A (en) * | 2013-09-25 | 2014-01-22 | 中国科学院半导体研究所 | Method for measuring GaN-based LED (light emitting diode) polarization electric field by utilizing photoluminescence spectra |
| CN103926519A (en) * | 2014-04-26 | 2014-07-16 | 中国科学院新疆理化技术研究所 | Quantitative test method used for cross NPN transistor ionizing radiation damage |
| CN106323936A (en) * | 2015-07-07 | 2017-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for detecting GaN material by ultraviolet laser Raman spectroscopy |
| CN106707044A (en) * | 2015-11-16 | 2017-05-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for testing piezoelectric effect based on ultraviolet Raman spectrum |
| CN113237639A (en) * | 2021-06-29 | 2021-08-10 | 苏州大学 | Testing device for light diode |
| CN113791326A (en) * | 2021-09-08 | 2021-12-14 | 严群 | Equipment for realizing photoelectric performance test of LED device by injecting current into dielectric layer |
| CN115639456A (en) * | 2022-12-08 | 2023-01-24 | 深圳市粉紫实业有限公司 | Method, system and medium for predicting service life of light emitting diode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5856869A (en) * | 1995-05-01 | 1999-01-05 | Ashland Inc | Distributed bragg reflector diode laser for Raman excitation and method for use |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101109724B (en) * | 2007-08-16 | 2010-05-19 | 中国科学院上海技术物理研究所 | Method for detecting quantum dot density inside multiple quantum well light emitting diode |
| CN101196552B (en) * | 2007-12-07 | 2010-08-25 | 中国科学院上海技术物理研究所 | Method for judging existence of high-efficiency quantum structure in multi-quantum well LED materials |
| CN102721913B (en) * | 2012-06-13 | 2014-12-10 | 中国电子科技集团公司第五十五研究所 | In-wafer reliability screening method for GaN HEMT (High Electron Mobility Transistor) device |
| CN102721913A (en) * | 2012-06-13 | 2012-10-10 | 中国电子科技集团公司第五十五研究所 | In-wafer reliability screening method for GaN HEMT (High Electron Mobility Transistor) device |
| CN103529310B (en) * | 2013-09-25 | 2015-12-23 | 中国科学院半导体研究所 | A kind of method utilizing the polarized electric field of photoluminescence spectrometry GaN base LED |
| CN103529310A (en) * | 2013-09-25 | 2014-01-22 | 中国科学院半导体研究所 | Method for measuring GaN-based LED (light emitting diode) polarization electric field by utilizing photoluminescence spectra |
| CN103926519A (en) * | 2014-04-26 | 2014-07-16 | 中国科学院新疆理化技术研究所 | Quantitative test method used for cross NPN transistor ionizing radiation damage |
| CN106323936A (en) * | 2015-07-07 | 2017-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for detecting GaN material by ultraviolet laser Raman spectroscopy |
| CN106323936B (en) * | 2015-07-07 | 2019-09-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | A method of using ultraviolet laser Raman spectral detection GaN material |
| CN106707044A (en) * | 2015-11-16 | 2017-05-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for testing piezoelectric effect based on ultraviolet Raman spectrum |
| CN106707044B (en) * | 2015-11-16 | 2019-05-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | A method of the test piezoelectric effect based on uv raman spectroscopy |
| CN113237639A (en) * | 2021-06-29 | 2021-08-10 | 苏州大学 | Testing device for light diode |
| CN113791326A (en) * | 2021-09-08 | 2021-12-14 | 严群 | Equipment for realizing photoelectric performance test of LED device by injecting current into dielectric layer |
| CN115639456A (en) * | 2022-12-08 | 2023-01-24 | 深圳市粉紫实业有限公司 | Method, system and medium for predicting service life of light emitting diode |
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