CN1772473A - Gas absorbing film element of multilayer film structure and its making process and usage - Google Patents
Gas absorbing film element of multilayer film structure and its making process and usage Download PDFInfo
- Publication number
- CN1772473A CN1772473A CN 200410090635 CN200410090635A CN1772473A CN 1772473 A CN1772473 A CN 1772473A CN 200410090635 CN200410090635 CN 200410090635 CN 200410090635 A CN200410090635 A CN 200410090635A CN 1772473 A CN1772473 A CN 1772473A
- Authority
- CN
- China
- Prior art keywords
- layer
- gas
- film
- absorber element
- film structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The gas absorbing film element of multilayer film structure includes one supporting ceramic substrate, one gas absorbing layer deposited onto the ceramic substrate, one catalyst layer covering the gas absorbing layer and one heating layer inside the supporting ceramic substrate. The gas absorbing layer includes at least two kinds of Ti, Zr, V, La, Y, Ce, Nb, Nd, Hf and Fe; and the catalyst layer is alloy film containing Pd, at least one of Ag, Ni, Cr, Cu and Al, and at least one of La, Y, Ce and Nb, with La and Y being single substance or oxide. The supporting ceramic substrate is sintered and has specific surface area over 1 sq m/g. There are porous ventilating net over the catalyst layer and packing casing in the outmost of the gas absorbing film element. The making process includes sintering to produce the porous ceramic substrate, co-evaporating to deposit the gas absorbing layer, and co-sputtering to form the catalyst layer. The gas absorbing film element may be low temperature activated and has stable performance.
Description
Technical field
The invention belongs to sensing element and and manufacture method thereof.Specifically, the present invention relates to a kind of on porous semi-conductor oxide ceramics body the gas absorption cell and production and preparation method thereof of deposition gases absorbing membrane and catalytic film.
Background technology
The getter element is widely used in high-vacuum apparatus and the gas purification apparatus, and these elements adopt some to have the GAS ABSORPTION materials with function usually, and the active gases molecule in the absorption environment is kept vacuum atmosphere or purified inert gas.Getter material is divided into two big classes: evaporable air-absorbing agent and nonevaporable getter (NEG (non-evaporable getter)).Evaporable air-absorbing agent mainly comprises alkaline-earth metal Ca, Sr, Ba etc.NEG comprises Ti, Zr, V or adds the binary or the ternary alloy three-partalloy of Al, rare earth metal.All getters all need to activate before work, and to eliminate oxide on surface, nitride and C, these surface impurities can hinder the absorption of active gases molecule on the getter surface greatly.In fact, because gettering material all has very high activity, thus generally need under inert atmosphere, produce, and with a kind of inactive state storage, this just requires to need to activate before using, and removes the surface inertness layer.
Evaporable getter material generally is used for cathode-ray tube (CRTs), and Ba class evaporable material evapotranspires and is deposited on the inner surface of ray tube.For evaporable air-absorbing agent, activation can adopt radio frequency directly to heat Ba class material, also can toast ray tube.The process that activates and the process of nonevaporable getter are followed mutually.Generally need add some Ni, Al powder in Ba, in the process of baking, Ni, Al exothermic heat of reaction impel Ba to evapotranspire, and this process is very fast usually, is become " flash " phenomenon.
NEG usually is used in following several aspects: in high-vacuum pump, vacuum heat-insulating pipe, fluorescent lamp, the electron tube.Usually, NEG is pressed or sintering adult shape, is placed in the vacuum chamber, also can be coated in and form banded asepwirator pump on the sheet metal.As noted earlier, there was one deck passivation layer in NEG in the surface before using, and needed to eliminate passivation layer through hot activation, exposed unsalted surface.Generally speaking, getter was placed in the vacuum chamber before activating, and environment vacuumizes.Hot activation can make on the one hand O, the N molecular migration inside to getter particles, also can remove remained on surface C on the other hand, getter is exposed have the surface of chemical adsorption capacity.Have research to think that the activationary temperature of getter largely relies on the composition of getter, the St707 composition of SAES company is: Zr70V24.6Fe5.4, and activationary temperature is about 350 ℃; The St101 composition is: ZrA116, activationary temperature is at 900 ℃.
The activationary temperature of getter has not only determined inspiratory capacity and the gettering rate of itself, and also the design of the vacuum chamber of getter is placed in influence.No matter be evaporable air-absorbing agent or nonevaporable getter, vacuum chamber all needs to adopt the good conductor material of heat, is beneficial to activate.What employing was more now is the vacuum chamber that the steel material is made, and quality is heavy, and especially in activation, temperature surpasses 300 ℃, and the easy oxidation of vacuum chamber inwall for fear of oxidation, just need be adopted the lower gettering material of some activationary temperatures.In addition, the reduction of getter activationary temperature also is beneficial to and enlarges electron tube material therefor scope, and reduces whole energy consumption.European Center for Nuclear Research, adopted the getter that ultralow temperature activates after, the vacuum chamber material has changed light weight, Al and Cu that thermal conductivity is good into.
Kokai has introduced a kind of NEG structural scheme of low-temp activation in Japan Patent 8-196899.This NEG system adopts Ti and TiO
2, BaO
2As getter, when when heating, these two kinds of oxides can oxidized metal Ti, generates TiO in mixture
3, and emit heat and activate remaining metal Ti.In this individual system, also add 3%～5% Ag and come compensation temperature.Report that the activationary temperature of the getter of this prescription has only 300～400 ℃.In addition, 1997, people such as Corazza also mentioned adopting in United States Patent (USP) 6013195 and have added oxide to reduce the scheme of activationary temperature.
Research for the non-evaporable gas absorption cell has continued many years.Original adoption mechanical alloy alloying prepares the GAS ABSORPTION powder, utilizes the method for cold compaction to make the body air suction element then.In order to reduce activationary temperature, improve gettering rate and inspiratory capacity subsequently, extensively adopted high-energy ball milling to prepare the getter power of nanocrystalline structure, and added alloying element to realize low activationary temperature.Aspect the GAS ABSORPTION amount that reduces activationary temperature and raising material, the researcher has carried out many fruitful work.For example, 1994, Boffito introduced the scheme that oxide reduces activationary temperature of introducing in United States Patent (USP) 5312606; Corazza mentions adopting at United States Patent (USP) 6514430 in 2000 and adds oxide M gO, CuO, Ag
2O and CoO
3To reduce activationary temperature; 1998, Benvenuti mentioned employing Pd, Ru, Rh, the Os film covers on the NEG film as catalytic film in United States Patent (USP) 6554970, reducing activationary temperature, and improved gettering rate; 2002, Toia introduced interpolation Y, La to reduce activationary temperature in United States Patent (USP) 6521014; 2000, Arai described a kind of TiZr low-temp activation air suction element of the Zr of coating film in United States Patent (USP) 6559596; 1997, Conte introduced a kind of method that adopts getter and organic material co-sintering to prepare porous getter, and it is long-pending effectively to improve getter surface.
From the air suction element configuration aspects, nonevaporable getter can be divided into bulk, band shape, body shape and membrane structure.Can divide from active mode and to activate and interior activation dual mode outside doing.Air suction element generally is placed on electronic device inside and keeps vacuum, requires air suction element not produce particle contamination, can keep inner vacuum after lower temperature activates.Modern electron tube has microminiaturized trend, and the air suction element form of film class meets this requirement very much.In the research of non-evaporable getter element, film-type is used more and more widely in high-precision electronic equipment, this specific area that mainly has benefited from thin-film material is big, can overcome the dry linting of common air suction element fully and peel off defective after having adopted certain technology of preparing, and under the condition that volume significantly dwindles, can also guarantee higher inspiratory capacity and gettering rate.
For adopting cold compaction or low sintering getter element, prevent that dry linting from being a technology that is difficult to overcome.This air suction element generally is applicable to the working environment that does not have vibration, as vacuum heat collection pipe, bulb, vacuum glass etc.At Chinese patent 01275879.5,99225694.1,02128829.1,88102907,00135429.9,01118394.2 has all reported the application of similar air suction element.
Summary of the invention
The film gas absorber element that the purpose of this invention is to provide a kind of multi-layer film structure, be a kind of can be at low-temp activation, the miniature getter component structure of stable performance.
Another object of the present invention provides a kind of method of making the film gas absorber element of multi-layer film structure.
A further object of the present invention provides a kind of using method of film gas absorber element of multi-layer film structure.
For achieving the above object, the present invention takes following technical scheme:
A kind of film gas absorber element of multi-layer film structure, it is deposition one deck gas-absorbing layer on ceramic supporting body, on gas-absorbing layer, cover one deck Catalytic Layer, zone of heating is contained in ceramic supporting body inside, the composition of described gas-absorbing layer includes Ti, Zr, V, La, Y, Ce, Nd, Nb, at least two kinds of materials among Hf and the Fe, described Catalytic Layer is the alloy firm of catalytic metal, it contains Pd, and Ag, Ni, Cr, at least a among Cu and the Al, and La, Y, a kind of rare earth element among Ce and the Nb or their mixture, wherein, La, Y can be simple substance or its oxide.
In the film gas absorber element of multi-layer film structure of the present invention, gas-absorbing layer is the main part of element; Catalytic Layer can increase the pumping property of gettering material and reduce activationary temperature; Ceramic support is used to support gas-absorbing layer; Zone of heating is a heating electrode, is in ceramic supporting body inside, is used for activating heating, and adopts the external electrode lead-in wire to be communicated with heating power supply.
In the film gas absorber element of multi-layer film structure of the present invention, be provided with porous gas above the described Catalytic Layer and see through net, periphery at this absorber element is provided with package casing, and with porous gas see through net, Catalytic Layer, gas-absorbing layer and ceramic supporting body around the side, and the bottom surface of ceramic supporting body is connected as a single entity.To keep the integrality of air suction element, also have, it is to be used to prevent the damage of foreign substance to the film surface that porous gas sees through net.
In the film gas absorber element of multi-layer film structure of the present invention, in described GAS ABSORPTION layer material, its preferred content consists of, and Zr is 65wt%～71wt%, V is 28wt%～32wt%, and surplus is at least a among Ti, La, Y, Ce, Nd, Nb, Hf and the Fe.
In the film gas absorber element of multi-layer film structure of the present invention, in described GAS ABSORPTION layer material, also include Ni, Cr, Al, Sn and Si, the another kind of preferred content of this GAS ABSORPTION layer material consists of, and Ni, Cr, Al, Sn, Si and Fe content are 15wt%; At least a among V, La, Y, Ce, Nd, Nb and the Hf is 85wt%.
In the film gas absorber element of multi-layer film structure of the present invention, preferably the consisting of of described Catalytic Layer: contain Pd and Ag, and a kind of rare earth element among La, Y, Ce and the Nd or their mixture.
In the film gas absorber element of multi-layer film structure of the present invention, in above-mentioned preferred Catalytic Layer was formed, the atomic ratio of Pd/Ag was between 25/1～2/1; A kind of rare earth element or their mixture shared ratio in Catalytic Layer is no more than 5 quality % among La, Y, Ce and the Nd.
In the film gas absorber element of multi-layer film structure of the present invention, described gettering layer thickness is 1 μ m～10 μ m.
In the film gas absorber element of multi-layer film structure of the present invention, described Catalytic Layer thickness is 0.1 μ m～1 μ m.
In the film gas absorber element of multi-layer film structure of the present invention, described ceramic supporting body is ceramic porous supporter, and it contains Al at least
2O
3, SnO
2, a kind of material among SiC, ZrO and the ZnO.
In the film gas absorber element of multi-layer film structure of the present invention, described ceramic supporting body is a ceramic porous supporter behind the sintering, and its specific area is greater than 1m
2/ g.And ceramic porous support body material is a kind of semi-conducting material with GAS ABSORPTION function.
In the film gas absorber element of multi-layer film structure of the present invention, described zone of heating is for being zigzag or single layer structure, have two external heating terminations, these two heating terminations expose downside at ceramic supporting body, and these two heating terminations and the sealing-in of ceramic support body interface employing corundum material.To prevent to become flexible slag.
In the film gas absorber element of multi-layer film structure of the present invention, the Ni-Cr alloy resistance wire that described zone of heating material is diameter 0.4mm.
In the film gas absorber element of multi-layer film structure of the present invention, described Fe Getter Films Prepared coats whole porous ceramic support.
In the film gas absorber element of multi-layer film structure of the present invention, it is metal matter that described porous gas sees through net, or has the organic film that gas is selected permeability.
A kind of method for preparing the film gas absorber element of multi-layer film structure, this method comprises the steps:
(1), at Al
2O
3, SnO
2, in a kind of material among SiC, ZrO and the ZnO, pre-buried resistance wire, its two ends is exposed at the homonymy of above-mentioned material outward, and adopts vacuum sintering method to prepare ceramic porous supporter;
(2), on the porous ceramic support that in step (1), obtains, adopt at least two kinds of materials among coevaporation method depositing Ti, Zr, V, La, Y, Ce, Nd, Nb, Hf and the Fe, form the GAS ABSORPTION layer film;
(3), adopt the cosputtering sedimentation to make and cover one deck Catalytic Layer alloy firm on the above-mentioned gas absorbed layer film; This Catalytic Layer alloy firm contains at least a among Pd and Ag, Ni, Cr, Cu and the Al, and a kind of rare earth element among La, Y, Ce and the Nd or their mixture, and wherein, Ni, Y can be simple substance or its oxide.
(4), at the Catalytic Layer alloy firm porous gas is installed and is seen through net, and, promptly make the film gas absorber element of multi-layer film structure at the side package casing all around of porous gas through net, Catalytic Layer alloy firm, GAS ABSORPTION layer film and ceramic porous supporter.
In the method for the film gas absorber element of preparation multi-layer film structure of the present invention, in described step (1), described sintering method is not for there being the vacuum sintering method of pressure.
In the method for the film gas absorber element of preparation multi-layer film structure of the present invention, in described step (1), in described sintering process, add graphite, phenolic resins, SiO at least
2With a kind of material in the carbon fiber.
In the method for the film gas absorber element of preparation multi-layer film structure of the present invention, in described step (1), in described coevaporation process, the two ends that exposes of resistance wire adopts mask to protect, and the material of mask is a metal material, or ceramic sleeve.
A kind of using method of film gas absorber element of multi-layer film structure, the film gas absorber element of this multi-layer film structure need to carry out electrical heating in the course of the work and activate, and the work activationary temperature is between 300～450 ℃, and activationary time is 10～30 minutes.
Advantage of the present invention is:
The present invention has adopted plural layers to be deposited on structure on the porous ceramic support, and has improved the getter performance from material and configuration aspects.On structure, ground floor is a kind of alloy as catalyst layer, can effectively stop the getter film surface oxidation, and has outstanding selectivity and adsorptivity for hydrogen and isotope thereof.Catalytic Layer adopts the method preparation of cosputtering deposition.The existence of Catalytic Layer makes that the storage of air suction element is convenient, reduces activationary temperature simultaneously greatly.Gas-absorbing layer has adopted the complex alloy thin film of interpolation rare earth element (La, Y, Ce, Nd), from the composition proportion aspect control activationary temperature of material, adjusts film and forms minimum activationary temperature.In addition, in order to increase the gas absorption area, and improve component life, supporter has adopted the ceramic material of porous surface.GAS ABSORPTION is deposited upon on the porous body, forms firm combining with supporter, and this structure has not only increased the surface area of getter, also is beneficial to improve inspiratory capacity and gettering rate.In order in vibration environment, to prevent the air suction element dry linting, improve from the structural design aspect of element, therefore the supporter of plural layers has good intensity through sintering processes.In addition at the membrane structure design aspect, taken all factors into consideration combining of film and supporter, adopt the porous substrate, select and ceramic material that the getter film lattice mates as far as possible as substrate, make it to interpenetrate the formation one.External heating electrode termination is cured handles, and makes whole element have excellent anti-vibration performance.At last, because this element adopted membrane structure, at overall dimensions be less than general air suction element qualitatively, meet the development trend of modern electron tube.
Description of drawings
Fig. 1 is the film gas absorber element structural representation of multi-layer film structure of the present invention
Fig. 2 is activationary time and a gettering rate curve map under the heterogeneity
Fig. 3 is activationary temperature and a gettering rate curve map under the heterogeneity
The specific embodiment
The film gas absorber element structure of multi-layer film structure of the present invention as shown in Figure 1, it is deposition one deck gas-absorbing layer 3 on ceramic supporting body 4, on gas-absorbing layer 3, cover one deck Catalytic Layer 2, it is heating electrode 6 that zone of heating is contained in ceramic supporting body inside, the external heating electrode lead-in wire 5 of this heating electrode, package casing 7 and all around side of porous gas through net 1, Catalytic Layer 2, gas-absorbing layer 3 and ceramic supporting body 4, and the bottom surface of ceramic supporting body 4 is connected as a single entity, to keep the integrality of air suction element.
Embodiment 1
At Al
2O
3In the material, pre-buried resistance wire, its two ends is exposed at the homonymy of above-mentioned material outward, and adopts vacuum sintering method to prepare the ceramic porous supporter that has heating electrode, size φ 10 * 5mm.
With being mixed with the Zr powder and the V powder of the rare earth elements RE of table 1 content, on above-mentioned porous ceramic support, carry out coevaporation, form the GAS ABSORPTION layer film, film thickness is 7 μ m.The content composition of employed Zr, V and RE sees Table 1, and wherein, RE is a kind of among rare-earth elements La, Y, Ce, the Nd, or its mixture.
In multi-target magnetic control sputtering equipment, carry out the sputter of gas sensitization layer (being Catalytic Layer) then, adjust the ratio of Pd, Ag alloy by the control sputtering power.Y is added in the Ag target as additive, and thick the reading of Catalytic Layer film is 0.5 μ m.The content composition of employed Pd, Ag and M sees Table 1, and wherein, M is Y or its oxide.
In the film sample external welding one stainless steel outer ring for preparing as the external reinforcement layer.For prevent that film from coming off or foreign object to the physical damnification of film, on ring dress external reinforcement layer, adopt the laser weld porous gas to see through net.And, promptly make the film gas absorber element of multi-layer film structure at the side package casing all around of porous gas through net, Catalytic Layer alloy firm, GAS ABSORPTION layer film and ceramic porous supporter.
After the film air suction element assembling of embodiment 1,2,3 finishes, its hydrogen absorbent properties are tested.The activationary time of embodiment 1,2,3 and gettering rate curve as shown in Figure 2, activationary temperature and gettering rate curve are as shown in Figure 3.
In Fig. 2, Fig. 3, represent the curve of embodiment 1,2,3 to be respectively A, B, C curve.
Activationary temperature under A (embodiment 1), B (embodiment 2), C (embodiment 3) proportioning and gettering rate curve are as shown in Figure 2, under different proportionings, addition increase along with RE, activationary time reduces, and proportioning C has an activationary time under the highest gettering rate in (embodiment 3)--and 589 seconds.Guaranteeing that activationary time is: proportioning A (embodiment 1) 1800 seconds, proportioning B (embodiment 2) 800 seconds, proportioning C (embodiment 3) 589 seconds under the situation of enough high gettering rates.Activationary temperature and gettering rate curve are as shown in Figure 3, activationary temperature under the different proportionings is between 300～400 ℃, along with the increase of absorbed layer and Catalytic Layer middle rare earth content, and the increase of V, Ag content, keep under the prerequisite of high gettering rate, activationary temperature is decremented to about 300 ℃ from 400 ℃.This shows that the change of proportioning has certain influence for activationary temperature and gettering rate.
The gas-absorbing layer of embodiment 1,2,3 and gas sensitive layer (being Catalytic Layer) adopt the composition of following table 1
| Gettering layer (wt%) | Catalytic Layer (wt%) | |||||
| Embodiment 1 | Zr 70.2 66.8 65.7 | V 28.6 30.0 31.3 | RE 1.2 3.2 3.0 | Pd 80 78 75 | Ag 19 20.5 22.8 | M 1 1.5 2.2 |
Claims (18)
1, a kind of film gas absorber element of multi-layer film structure, it is characterized in that: be deposition one deck gas-absorbing layer on ceramic supporting body, on gas-absorbing layer, cover one deck Catalytic Layer, zone of heating is contained in ceramic supporting body inside, the composition of described gas-absorbing layer includes Ti, Zr, V, La, Y, Ce, Nd, Nb, at least two kinds of materials among Hf and the Fe, described Catalytic Layer is the alloy firm of catalytic metal, it contains Pd, and Ag, Ni, Cr, at least a among Cu and the Al, and La, Y, a kind of rare earth element among Ce and the Nb or their mixture, wherein, La, Y can be simple substance or its oxide.
2, the film gas absorber element of multi-layer film structure according to claim 1, it is characterized in that: be provided with porous gas above the described Catalytic Layer and see through net, periphery at this absorber element is provided with package casing, and with porous gas see through net, Catalytic Layer, gas-absorbing layer and ceramic supporting body around the side, and the bottom surface of ceramic supporting body is connected as a single entity.3, the film gas absorber element of multi-layer film structure according to claim 1, it is characterized in that: in described GAS ABSORPTION layer material, its content consists of, Zr is 65wt%～71wt%, V is 28wt%～32wt%, and surplus is at least a among Ti, La, Y, Ce, Nd, Nb, Hf and the Fe.
4, the film gas absorber element of multi-layer film structure according to claim 1, it is characterized in that: in described GAS ABSORPTION layer material, also include Ni, Cr, Al, Sn and Si, the content of this GAS ABSORPTION layer material consists of, and Ni, Cr, Al, Sn, Si and Fe content are 15wt%; At least a among V, La, Y, Ce, Nd, Nb and the Hf is 85wt%.
5, the film gas absorber element of multi-layer film structure according to claim 1, it is characterized in that: described Catalytic Layer contains Pd and Ag, and a kind of rare earth element among La, Y, Ce and the Nd or their mixture.
6, the film gas absorber element of multi-layer film structure according to claim 5 is characterized in that: in described Catalytic Layer, the atomic ratio of Pd/Ag is between 25/1～2/1.A kind of rare earth element or their mixture shared ratio in Catalytic Layer is no more than 5% (mass percent) among La, Y, Ce and the Nd.
7, the film gas absorber element of multi-layer film structure according to claim 1 and 2 is characterized in that: described gettering layer thickness is 1 μ m～10 μ m.
8, the film gas absorber element of multi-layer film structure according to claim 1 and 2 is characterized in that: described Catalytic Layer thickness is 0.1 μ m～1 μ m.
9, the film gas absorber element of multi-layer film structure according to claim 1 and 2 is characterized in that: described ceramic supporting body is ceramic porous supporter, and it contains Al at least
2O
3, SnO
2, a kind of material among SiC, ZrO and the ZnO.
10, the film gas absorber element of multi-layer film structure according to claim 1 and 2 is characterized in that: described ceramic supporting body is a ceramic porous supporter behind the sintering, and its specific area is greater than 1m
2/ g.
11, the film gas absorber element of multi-layer film structure according to claim 1 and 2, it is characterized in that: described zone of heating is for being zigzag or single layer structure, have two external heating terminations, these two heating terminations expose downside at ceramic supporting body, and these two heating terminations and the sealing-in of ceramic support body interface employing corundum material.
12, the film gas absorber element of multi-layer film structure according to claim 6 is characterized in that: the Ni-Cr alloy resistance wire that described zone of heating material is diameter 0.4mm.
13, the film gas absorber element of multi-layer film structure according to claim 1 and 2, it is characterized in that: described Fe Getter Films Prepared coats whole porous ceramic support.
14, the film gas absorber element of multi-layer film structure according to claim 2 is characterized in that: it is metal matter that described porous gas sees through net, or has the organic film that gas is selected permeability.
15, a kind of method for preparing the film gas absorber element of multi-layer film structure, it is characterized in that: this method comprises the steps:
(1), at Al
2O
3, SnO
2, in a kind of material among SiC, ZrO and the ZnO, pre-buried resistance wire, its two ends is exposed at the homonymy of above-mentioned material outward, and adopts vacuum sintering method to prepare ceramic porous supporter;
(2), on the porous ceramic support that in step (1), obtains, adopt at least two kinds of materials among coevaporation method depositing Ti, Zr, V, La, Y, Ce, Nd, Nb, Hf and the Fe, form the GAS ABSORPTION layer film;
(3), adopt the cosputtering sedimentation to make and cover one deck Catalytic Layer alloy firm on the above-mentioned gas absorbed layer film; This Catalytic Layer alloy firm contains at least a among Pd and Ag, Ni, Cr, Cu and the Al, and a kind of rare earth element among La, Y, Ce and the Nd or their mixture, and wherein, Ni, Y can be simple substance or its oxide.
(4), at the Catalytic Layer alloy firm porous gas is installed and is seen through net, and, promptly make the film gas absorber element of multi-layer film structure at the side package casing all around of porous gas through net, Catalytic Layer alloy firm, GAS ABSORPTION layer film and ceramic porous supporter.
16, the method for the film gas absorber element of preparation multi-layer film structure according to claim 15 is characterized in that: in described step (1), described sintering method is not for there being the vacuum sintering method of pressure.
17, the method for the film gas absorber element of preparation multi-layer film structure according to claim 15 is characterized in that: in described step (1), add graphite, phenolic resins, SiO at least in described sintering process
2With a kind of material in the carbon fiber.
18, the method for the film gas absorber element of preparation multi-layer film structure according to claim 15; it is characterized in that: in described step (1); in described coevaporation process; the two ends that exposes of resistance wire adopts mask to protect; the material of mask is a metal material, or ceramic sleeve.
19, the using method of the film gas absorber element of the described multi-layer film structure of a kind of claim 1, it is characterized in that: the film gas absorber element of this multi-layer film structure needs to carry out electrical heating in the course of the work and activates, the work activationary temperature is between 300～450 ℃, and activationary time is 10～30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100906351A CN100544950C (en) | 2004-11-10 | 2004-11-10 | Film gas absorber element of multi-layer film structure and production and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100906351A CN100544950C (en) | 2004-11-10 | 2004-11-10 | Film gas absorber element of multi-layer film structure and production and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1772473A true CN1772473A (en) | 2006-05-17 |
| CN100544950C CN100544950C (en) | 2009-09-30 |
Family
ID=36759700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100906351A Active CN100544950C (en) | 2004-11-10 | 2004-11-10 | Film gas absorber element of multi-layer film structure and production and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100544950C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101318808B (en) * | 2007-08-07 | 2012-05-30 | 江苏省宜兴非金属化工机械厂 | Porous ceramic supporting body for high-strength inorganic separation film |
| CN102492865A (en) * | 2011-12-01 | 2012-06-13 | 西北有色金属研究院 | Porous material for purifying high-temperature gas and preparation method thereof |
| CN102543624A (en) * | 2010-12-10 | 2012-07-04 | 北京有色金属研究总院 | Pressing suction element with powder falling prevention device and preparation method for suction element |
| CN102557411A (en) * | 2010-12-27 | 2012-07-11 | 上海镭立激光科技有限公司 | Film-getter sealing and unsealing method for ultrathin vacuum glass |
| CN103044013A (en) * | 2011-10-13 | 2013-04-17 | 沈阳黎明航空发动机(集团)有限责任公司 | Preparation method of alumina ceramic shell for monocrystal blades |
| CN104307461A (en) * | 2014-10-24 | 2015-01-28 | 武汉钢铁(集团)公司 | Getter for purifying krypton and xenon, and preparation method of getter |
| CN105692545A (en) * | 2016-04-06 | 2016-06-22 | 合肥芯福传感器技术有限公司 | Electric heating activating device of getter |
| CN107760927A (en) * | 2017-10-20 | 2018-03-06 | 湘潭大学 | Ni Cr Fe structure of film metal polyporous materials and preparation method thereof |
-
2004
- 2004-11-10 CN CNB2004100906351A patent/CN100544950C/en active Active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101318808B (en) * | 2007-08-07 | 2012-05-30 | 江苏省宜兴非金属化工机械厂 | Porous ceramic supporting body for high-strength inorganic separation film |
| CN102543624A (en) * | 2010-12-10 | 2012-07-04 | 北京有色金属研究总院 | Pressing suction element with powder falling prevention device and preparation method for suction element |
| CN102543624B (en) * | 2010-12-10 | 2015-07-22 | 北京有色金属研究总院 | Pressing suction element with powder falling prevention device and preparation method for suction element |
| CN102557411A (en) * | 2010-12-27 | 2012-07-11 | 上海镭立激光科技有限公司 | Film-getter sealing and unsealing method for ultrathin vacuum glass |
| CN103044013A (en) * | 2011-10-13 | 2013-04-17 | 沈阳黎明航空发动机(集团)有限责任公司 | Preparation method of alumina ceramic shell for monocrystal blades |
| CN103044013B (en) * | 2011-10-13 | 2014-08-06 | 沈阳黎明航空发动机(集团)有限责任公司 | Preparation method of alumina ceramic shell for monocrystal blades |
| CN102492865A (en) * | 2011-12-01 | 2012-06-13 | 西北有色金属研究院 | Porous material for purifying high-temperature gas and preparation method thereof |
| CN104307461A (en) * | 2014-10-24 | 2015-01-28 | 武汉钢铁(集团)公司 | Getter for purifying krypton and xenon, and preparation method of getter |
| CN105692545A (en) * | 2016-04-06 | 2016-06-22 | 合肥芯福传感器技术有限公司 | Electric heating activating device of getter |
| CN107760927A (en) * | 2017-10-20 | 2018-03-06 | 湘潭大学 | Ni Cr Fe structure of film metal polyporous materials and preparation method thereof |
| CN107760927B (en) * | 2017-10-20 | 2020-01-07 | 湘潭大学 | Ni-Cr-Fe film-coated metal porous material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100544950C (en) | 2009-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1123036C (en) | Comibination of materials for low temperature triggering of activation of getter materials and getter devices containing the same | |
| JP3151033B2 (en) | Apparatus and method for removing hydrogen from vacuum envelopes, especially high energy accelerators, at cryogenic temperatures | |
| RU2277609C2 (en) | Multilayer coatings out of the non-evaporating getter produced by the cathodic deposition and the method of their manufacture | |
| CN1149609C (en) | Composite materials capable of hydrogen sorption independently from activating treatments and methods for the production thereof | |
| CN100544950C (en) | Film gas absorber element of multi-layer film structure and production and preparation method thereof | |
| GB2077487A (en) | A gettering composition and structure | |
| US2368060A (en) | Coating of electron discharge device parts | |
| TWI445620B (en) | Air-stable alkali or alkaline-earth metal dispensers | |
| CN1681952A (en) | Non-evaporable getter compositions which can be reactivated at low temperature after exposure to reactive gases at a higher temperature | |
| KR100844606B1 (en) | Composition and devices for gas sorption and process for their manufacturing | |
| EP2774166B1 (en) | Improved composite getters | |
| WO2004092440A1 (en) | Method for forming porous thin film | |
| CN1227700C (en) | Cathode ray tube comprising cathode of composite material | |
| JP7342374B2 (en) | Core-shell composite and its manufacturing method | |
| WO2010010563A2 (en) | Lithium or barium based film getters | |
| EP1891655A2 (en) | Light emitting device with electrode comprising a ceramic material | |
| CN116121706A (en) | Getter film for improving getter capacity of carbon-containing gas | |
| CN1088995A (en) | High firmness is inhaled hydrogen and isotropic substance getter thereof | |
| RU2513563C2 (en) | Sintered non-evaporating getter | |
| CN85102889A (en) | A kind of getter of wide activating temperature range and air suction element | |
| JPH0790434A (en) | Getter substance and method for cleaning and controlling reducive hydrogen atmosphere, and production of getter substance | |
| JP2004075908A (en) | Red phosphor for low-speed electron beam and fluorescent indication tube | |
| JP2004075907A (en) | Red phosphor for low-speed electron beam, its manufacturing method and fluorescent indication tube | |
| JPS6273536A (en) | Getter device | |
| CN1116246A (en) | High firmness hydrogen absorption and other isotope absorption agent |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190703 Address after: 101407 No. 11 Xingke East Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Research Institute of engineering and Technology Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: General Research Institute for Nonferrous Metals |