CN1767202A - Display device and its thin film transistor discharging method - Google Patents
Display device and its thin film transistor discharging method Download PDFInfo
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- CN1767202A CN1767202A CNA2005101096604A CN200510109660A CN1767202A CN 1767202 A CN1767202 A CN 1767202A CN A2005101096604 A CNA2005101096604 A CN A2005101096604A CN 200510109660 A CN200510109660 A CN 200510109660A CN 1767202 A CN1767202 A CN 1767202A
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Abstract
The invention relates to a display and discharging method of the thin film transistor which provides a thin film transistor with two grids to drive the electroluminace component. When the thin film transistor discharges, it establishes an electric field between the upper grid and the lower grid. It uses the electric field to improve the discharging ill effect problem of the thin film transistor channel; the intensity is corresponding with the voltage of the image element.
Description
Technical field
The present invention is relevant for a kind of electroluminescent display, and particularly relevant for a kind of charging method of thin-film transistor.
Background technology
The pixel of organic light emitting display (Organic Light Emitting Display) is generally with thin-film transistor (Thin Film Transistor, TFT) cooperate electric capacity to come storage signal, with control Organic Light Emitting Diode (Organic Light Emitting Diode, brightness OLED).
(amorphous silicon when a-Si) making, must add discharge (discharge) program in the process that drives, increasing the useful life of thin-film transistor, and then keep picture quality and above-mentioned thin-film transistor is with amorphous silicon technology.Right traditional discharge procedures gives each thin-film transistor identical operations voltage carrying out discharge procedures, and can not corresponding to each pixel separately the situation of deterioration give different operating voltages.Therefore will cause thin-film transistor partly to produce over-discharge can or the not enough phenomenon of discharge.And traditional charging method also can't discharge effectively for the raceway groove in the thin-film transistor (channel).Therefore, above-mentioned variety of problems all will cause the display quality of organic light emitting display to reduce.
In view of this, how can be in each pixel, the thin-film transistor situation of deterioration separately gives different operating voltages reaching different discharge effect, and then the characteristic of improving the thin-film transistor deterioration is that present industry is badly in need of the problem that solves.
Summary of the invention
Purpose of the present invention is exactly in the discharge that a kind of display unit and thin-film transistor thereof are provided (discharge) method, can at each pixel separately the situation of deterioration give different operating voltages reaching different discharge effect, and then improve the characteristic of thin-film transistor deterioration.
According to purpose of the present invention, a kind of discharge (discharge) method of thin-film transistor is proposed, be used at least one pixel.This pixel comprises thin-film transistor and electroluminescence part.One end of electroluminescence part is electrically connected to the source/drain of thin-film transistor.The charging method of thin-film transistor is described below.Provide first voltage and second voltage first grid and second grid respectively, and first voltage and second voltage has first voltage difference at thin-film transistor.This first voltage difference is crossed the magnitude of current of thin-film transistor in order to control flows.Provide tertiary voltage, the 4th voltage and the 5th voltage second grid, the source/drain of thin-film transistor and the other end of electroluminescence part respectively, and tertiary voltage and first voltage has second voltage difference at thin-film transistor.This second voltage difference, the 4th voltage and the 5th voltage with so that thin-film transistor discharge.
According to another object of the present invention, a kind of display unit is proposed.Display unit comprises pel array, data drive circuit and drive circuit.At least one pixel in the pel array comprises a thin-film transistor, an electroluminescence part and an electric capacity at least.Thin-film transistor has first grid and second grid.One end of electroluminescence part is couple to the source/drain of thin-film transistor.One end of electric capacity is couple to first grid.
Data drive circuit is electrically connected to first grid, in order to provide first voltage or pixel voltage in first grid.Drive circuit is electrically connected to second grid, when providing first voltage to first grid when data drive circuit, provides second voltage to second grid, and second voltage makes thin-film transistor turn-off (ending).And when thin-film transistor will discharge (discharge), provide tertiary voltage to second grid and fixed voltage to arrive this source/drain electrode of this thin-film transistor and the other end of electroluminescence part.Wherein, the voltage difference of the tertiary voltage and first voltage is corresponding to pixel voltage.This voltage difference and fixed voltage discharge this thin-film transistor.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail as follows:
Description of drawings
Fig. 1 is the thin-film transistor charging method flow chart of preferred embodiment of the present invention.
Fig. 2 is the circuit diagram of an example of image element circuit.
Fig. 3 is a film crystal tube discharge schematic diagram.
Fig. 4 is the schematic diagram of an example of the display unit of preferred embodiment of the present invention.
Fig. 5 is the schematic diagram of sequencing control of the present invention.
Fig. 6 is the relation curve schematic diagram between thin-film transistor conducting electric current and grid voltage.
Fig. 7 is another routine circuit diagram of image element circuit.
The primary clustering symbol description
100,100 ': image element circuit
102: electricity causes sends out luminous element
104: thin-film transistor
106: storage capacitance
400: display unit
402: data drive circuit
404: scan drive circuit
406: drive circuit
E1, E2, E3: electric field
G1, G2, G1 ', G2 ': grid
S, S ': source electrode
D, D ': drain electrode
Embodiment
Each pixel separately the situation of deterioration corresponding to the received pixel voltage of each pixel (Vdata) size.The invention provides a thin-film transistor with two grids, to drive electroluminescence part luminous, and promptly thin-film transistor has and independently descends grid and last grid.After pixel-by-pixel basis harvests pixel voltage and shows according to this, set up an electric field between last grid and following grid.This electric field is in order to the problem of the charge discharge poor effect of improving the raceway groove place, and its intensity is proportional to the voltage swing of pixel voltage.In addition, when setting up up and down the electric field between grid, also between source electrode and following grid and drain and following grid between set up two electric fields respectively, with complete thin-film transistor is discharged.And in the pixel procedure for displaying, can be at the different brightness decay degree of each pixel, apply different discharge electric fields, that is to say more can be by adjusting voltage swing on the second grid with the flow through magnitude of current of thin-film transistor of adjustment, and then the luminance compensation that electroluminescence part descends is returned.So the present invention provides the more electroluminescent display of high display quality by providing thin-film transistor with two grids with when the amorphous silicon manufacturing process.
Please refer to Fig. 1, it is for the thin-film transistor charging method flow chart of preferred embodiment of the present invention.Thin-film transistor is used for pixel, and it has two grids.The discharge of thin-film transistor (discharge) method comprises the following steps: at first in step 200, provide second voltage in second grid so that thin-film transistor turn-offs (promptly by).Then in step 202, during thin-film transistor is turned off, provide first voltage at thin-film transistor first grid and make this first store voltages in the storage capacitance of correspondence.The voltage level of this first voltage is corresponding to the voltage level of the last pixel voltage that this pixel received.Then in step 204, when the film crystal tube discharge, changing provides tertiary voltage on second grid, makes and forms an electric field between second grid and first grid.The intensity of this electric field is proportional to the voltage swing of last pixel voltage and the electric charge at raceway groove place is discharged.
Furthermore, please refer to Fig. 2, it is the circuit diagram of an example of image element circuit.The discharge of above-mentioned thin-film transistor (discharge) method for example is applied to image element circuit 100.Image element circuit 100 for example realizes with the amorphous silicon manufacturing process that it comprises an electroluminescence part 102 and at least one thin-film transistor (Thin Film Transistor, TFT) 104.Electroluminescence part 102 for example be Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) or polymer LED (PolymerLight Emitting Diode, PLED).Thin-film transistor 104 for example is a N type thin-film transistor, and it has two grids.Two grids are respectively first grid G1 and second grid G2.Thin-film transistor 104 cooperates at least one electric capacity to come storage control signal with normal, with the intensity gray scale performance of control Organic Light Emitting Diode 102.For example shown in Figure 2, image element circuit 100 also comprises a storage capacitance 106.One end of storage capacitance 106 is couple to first grid G1, and the other end of storage capacitance 104 is couple to a reference voltage Vref.The negative pole of above-mentioned electroluminescence part 102 is couple to the drain D of thin-film transistor 104.
Since each pixel separately the situation of deterioration corresponding to the received pixel voltage size of each pixel, so after pixel 100 is received pixel voltage and has been shown according to this, foundation corresponding to the electric field E3 (being shown in Fig. 3) of pixel voltage between first grid G1 and second grid G2.In other words, behind pixel 100 display images, in step 200, before thin-film transistor 104 will discharge, by the second voltage V2 is provided, for example-15 volt, in second grid G2 to allow thin-film transistor 104 turn-off.In step 202, at thin-film transistor between 104 off periods, provide the first voltage V1 to first grid G1 and be stored in storage capacitance 104.Because the voltage swing of the last pixel voltage that the first voltage V1 is received corresponding to this pixel 100, for example the scope of pixel voltage is approximately 0V to 10V, and received pixel voltage be+10 volts, and then the first voltage V1 that applies of correspondence is 0 volt; Perhaps, pixel voltage is 0 volt, and the then first voltage V1 that correspondence applies is+10 volts.Then, in step 204, when thin-film transistor 104 will discharge, changing provided tertiary voltage V3 to second grid G2, tertiary voltage V3 for example is+30 volts, and provide simultaneously the 4th voltage V4 to the anode of electroluminescence part 102 with the 5th voltage V5 is provided the source electrode to thin-film transistor 104.The 4th voltage V4 is identical voltage level with the 5th voltage V5, for example is+30 volts.
The 4th voltage V4 and the 5th voltage V5 are with so that thin-film transistor 104 forms electric field E1 and E2 respectively with drain D-first grid G1 between source S-first grid G1.Therefore, by third and fourth, five voltage V3, V4, V5 form electric field E3, E1, E2 with the first voltage V1 respectively, so that thin-film transistor 104 discharges.As shown in Figure 3, it is a film crystal tube discharge schematic diagram.The electronic building brick that thin-film transistor 104 is constituted for following grid (Bottom-gate) G1, last grid (Top-gate) G2, source S, drain electrode S, first insulating barrier 30, first insulating barrier 40, amorphous silicon channel layer 50 and heavily doped semiconductor layer 60.According to above-mentioned, from Fig. 3, can learn by forming an electric field E3 between second grid G2 and first grid G1 and discharge with electric charge to raceway groove 50.And simultaneously by between source S and first grid G1 and the electric field E1 between drain D and first grid G1 and E2 reach whole discharge effect.
Please refer to Fig. 4, it is the schematic diagram of an example of the display unit of preferred embodiment of the present invention.Display unit 400 comprises data drive circuit 402, scan drive circuit 404, drive circuit 406 and pel array.Pel array is made up of a plurality of above-mentioned image element circuit 100, is example with an image element circuit 100 in Fig. 4.Image element circuit 100 also comprises a thin-film transistor T1.Data drive circuit 402 for example in order to foundation view data (RGB data) with output pixel voltage or the above-mentioned first voltage V1 to image element circuit 100.Scanning circuit 404 is for example in order to pass through scan line S output scanning signal to thin-film transistor T1, so that pixel 100 receives corresponding pixel voltage.Drive circuit 406 required operating voltage when pixel 100 operation to be provided, for example the 4th voltage V4 of required+12 volt and 0 volt the 5th voltage V5 during display image, and when discharge the voltage level of the required second voltage V2, tertiary voltage V3, the 4th voltage V4 and the 5th voltage V5.Drive circuit 406 for example is electrically connected with the second grid G2 of pixel 100 by another scan line S ' (scanning line) or another power line.
Furthermore, please refer to Fig. 5, it is the schematic diagram of sequencing control of the present invention.Voltage Vout is the output voltage sequential of data drive circuit 402 among the figure.Data drive circuit 402 is imported pixel voltage Vdata to pixel 100 in the period T 1 of display frame.At this moment, the 4th voltage V4 and the 5th voltage V5 are operated under the normal operating voltage, and for example the 4th voltage V4 is 0 volt for+12 volt of the 5th voltage V5.And voltage V
G2Be the voltage level on the second grid.In the period T 1 of display frame, V
G2On voltage level make thin-film transistor 104 conductings.
Then, in the discharge cycle T2 or claim " during the electrical characteristics of replacement thin-film transistor ", drive circuit 406 provide-15 volts the second voltage V2 to second grid G2 so that thin-film transistor 104 end.At thin-film transistor between the off period, i.e. time T4, the pixel voltage Vdata that data drive circuit 402 is received in the period T 1 of a last display frame corresponding to each pixel 100, it provides the first voltage V1 of each pixel 100 correspondence in regular turn.For example a certain first pixel (not being indicated among Fig. 4) receive+10 volts pixel voltage, and second pixel (not being indicated among Fig. 4) receives 0 volt pixel voltage in the period T 3 of display frame.Then at thin-film transistor between the off period in the T4, first pixel-by-pixel basis is received 0 volt the first voltage V1, and second pixel-by-pixel basis is received+and 10 volts the first voltage V1.At thin-film transistor between the off period behind the T4, drive circuit 406 changes to be provided+and 30 volts tertiary voltage V3 is pulled in second grid G2 and with the voltage level of the 4th voltage V4 and the 5th voltage V5+and 30 volts.Therefore, when discharging, the first grid G1 of above-mentioned first pixel and the voltage difference between second grid G2 are greater than the first grid G1 of above-mentioned second pixel and the voltage difference between second grid G2, and promptly the discharge effect of first pixel can be greater than second pixel.In other words, when each pixel 100 receives different pixel voltage Vdata and different degradations can be arranged, by providing the first different voltage V1 to reach different discharge effect, promptly at each pixel 100 separately the situation of deterioration give the first different voltage V1 to reach different discharge effect.
In addition the present invention except can at each pixel 100 separately the situation of deterioration give the first different voltage V1 to reach the different discharge effect, more can be in the pixel procedure for displaying, the brightness decay degree of corresponding each pixel 100, by second grid G2 with the magnitude of current of adjusting its thin-film transistor 104 so that the luminance compensation that descends is returned.Please refer to Fig. 6, it is the relation curve schematic diagram between thin-film transistor conducting electric current and grid voltage.The voltage level V that is indicated on the figure
BGBe the voltage difference between first grid G1 and first grid G2, electric current I
DSFor flowing through the electric current of thin-film transistor 104.In procedure for displaying, promptly period T 1, can be by the brightness of drive circuit 406 corresponding each pixels 100 decline, and the voltage level of output correspondence is to the second grid G2 in each pixel 100, to adjust electric current I in the procedure for displaying
DSSize.
Wherein, thin-film transistor 104 is an example with N type thin-film transistor in the foregoing description, can also P type thin-film transistor be example so, and for example shown in Figure 7, it is another routine circuit diagram of image element circuit.Thin-film transistor 104 ' for example is a P type thin-film transistor, and it also has two grids.Two grids are respectively first grid G1 ' and second grid G2 '.Thin-film transistor 104 ' also cooperates an electric capacity to come storage control signal at least, with the intensity gray scale performance of control Organic Light Emitting Diode 102.One end of storage capacitance 106 ' is couple to first grid G1 ', and its other end is couple to a reference voltage Vref.And the negative pole of above-mentioned electroluminescence part 102 is couple to the source S of thin-film transistor 104.When thin-film transistor 104 was example with P type thin-film transistor, its charging method as above-mentioned just no longer therewith stating more.In addition, image element circuit 100 for example except can the amorphous silicon manufacturing process realizing, can also microcrystal silicon (micro-si) manufacturing process be realized.
Discharge (discharge) method of disclosed display unit of the above embodiment of the present invention and thin-film transistor thereof, can at each pixel separately the situation of deterioration give different operating voltages to reach different discharge effect, and then improve outside the characteristic of thin-film transistor deterioration, more can be in procedure for displaying corresponding to the brightness decay degree of each pixel, by second grid with the magnitude of current of adjusting its thin-film transistor so that the luminance compensation that descends is returned, and then reach the purpose of improving display quality.
Though the present invention with preferred embodiment openly as above; right its is not that any those skilled in the art are under the situation that does not break away from the spirit and scope of the present invention in order to qualification the present invention; can change and modification, so protection scope of the present invention is as the criterion with the claim institute restricted portion that is proposed.
Claims (19)
1. the charging method of a thin-film transistor is used at least one pixel, and this pixel comprises this thin-film transistor and an electroluminescence part, and an end of this electroluminescence part is electrically connected to the source/drain of this thin-film transistor, and this charging method comprises:
Provide one first voltage and one second voltage to a first grid and a second grid of this thin-film transistor respectively, and this first voltage and this second voltage has one first voltage difference, this first voltage difference is crossed the magnitude of current of this thin-film transistor in order to control flows; And
One tertiary voltage, one the 4th voltage and one the 5th voltage this second grid, the source/drain of this thin-film transistor and the other end of this electroluminescence part to this thin-film transistor are provided respectively, and this tertiary voltage and this first voltage have one second voltage difference, this second voltage difference, the 4th voltage and the 5th voltage with so that this thin-film transistor discharge.
2. the method for claim 1, wherein this first voltage corresponds to a pixel voltage of this pixel.
3. the method for claim 1, wherein the 4th voltage is equal to the 5th voltage.
4. the method for claim 1, wherein the 4th voltage is not equal to the 5th voltage.
5. the method for claim 1, wherein this first voltage difference is equal to this second voltage difference.
6. the method for claim 1, wherein this first voltage difference is not equal to this second voltage difference.
7. the method for claim 1, wherein the voltage level of this second grid can be adjusted, and crosses the magnitude of current of this thin-film transistor in order to control flows.
8. method as claimed in claim 2, wherein, this pixel voltage and this first voltage are exported by a data drive circuit.
9. method as claimed in claim 8 wherein, when the pairing voltage level of this pixel voltage is high more, improves this second voltage difference, so that this thin-film transistor produces corresponding discharge effect corresponding to this second voltage difference.
10. display unit comprises:
One pel array, at least one pixel in this pel array comprises at least:
One thin-film transistor has a first grid and a second grid;
One electroluminescence part, an end of this electroluminescence part is couple to the source/drain of this thin-film transistor; And
One electric capacity, an end of this electric capacity is couple to this first grid of this thin-film transistor;
One data drive circuit is electrically connected to this first grid, in order to provide one first voltage or a pixel voltage to this first grid; And
One drive circuit is electrically connected to this second grid.
11. display unit as claimed in claim 10, wherein, when this data drive circuit provides one first voltage to this first grid, this drive circuit provides one second voltage to this second grid, this second voltage turn-offs this thin-film transistor, and when this thin-film transistor will discharge, provide a tertiary voltage to arrive the one source pole of this thin-film transistor or the other end of a drain electrode and this electroluminescence part to this second grid and a fixed voltage;
Wherein, a voltage difference of this tertiary voltage and this first voltage is corresponding to this pixel voltage, and this voltage difference and this fixed voltage discharge this thin-film transistor.
12. display unit as claimed in claim 10, wherein, the voltage level of fine-tuning whole this second grid of this drive circuit is crossed the magnitude of current of this thin-film transistor in order to control flows.
13. a driving method, in order to adjusting the electrical characteristics of the thin-film transistor in the display unit, and this display unit has at least one electroluminescence part, and this method comprises:
Activate this thin-film transistor in a display cycle, comprising:
The first grid of one first voltage to this thin-film transistor is provided;
Provide one second voltage to a second grid of this thin-film transistor, and this first voltage and this second voltage has one first voltage difference, this first voltage difference is crossed the magnitude of current of this thin-film transistor in order to control flows, and this first voltage is corresponding to a pixel voltage; And
Drive this electroluminescence part according to this pixel voltage and produce corresponding brightness; And
The electrical characteristics of this thin-film transistor of resetting comprise:
One tertiary voltage this second grid to this thin-film transistor is provided;
The source of one the 4th this thin-film transistor of voltage is provided; And
Provide one the 5th voltage to the other end of this electroluminescence part, and this tertiary voltage and this first voltage has one second voltage difference, wherein, this second voltage difference, the 4th voltage and the 5th voltage with so that this thin-film transistor reset.
14. method as claimed in claim 13, wherein, the 4th voltage is equal to the 5th voltage.
15. method as claimed in claim 13, wherein, the 4th voltage is not equal to the 5th voltage.
16. method as claimed in claim 13, wherein, this first voltage difference is equal to this second voltage difference.
17. method as claimed in claim 13, wherein, this first voltage difference is not equal to this second voltage difference.
18. method as claimed in claim 13, wherein, the voltage level of this second grid can be adjusted, and crosses the magnitude of current of this thin-film transistor in order to control flows.
19. method as claimed in claim 13, wherein, this pixel voltage and this first voltage are exported by a data drive circuit.
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| CN107424569A (en) * | 2017-08-03 | 2017-12-01 | 京东方科技集团股份有限公司 | Pixel unit circuit, driving method, image element circuit and display device |
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| CN103117042B (en) * | 2013-02-22 | 2015-03-18 | 合肥京东方光电科技有限公司 | Pixel unit drive circuit, pixel unit drive method, pixel unit and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2000214800A (en) * | 1999-01-20 | 2000-08-04 | Sanyo Electric Co Ltd | Electroluminescence display device |
| JP4161454B2 (en) * | 1999-03-16 | 2008-10-08 | カシオ計算機株式会社 | Display element, driving method thereof, and display device |
| US6906344B2 (en) * | 2001-05-24 | 2005-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with plural channels and corresponding plural overlapping electrodes |
| JP2002358031A (en) * | 2001-06-01 | 2002-12-13 | Semiconductor Energy Lab Co Ltd | Light emitting device and its driving method |
| KR100488835B1 (en) * | 2002-04-04 | 2005-05-11 | 산요덴키가부시키가이샤 | Semiconductor device and display device |
| JP4474900B2 (en) * | 2003-10-29 | 2010-06-09 | カシオ計算機株式会社 | Electrostatic protection circuit and electronic circuit having the same |
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| CN107424569A (en) * | 2017-08-03 | 2017-12-01 | 京东方科技集团股份有限公司 | Pixel unit circuit, driving method, image element circuit and display device |
| US11056056B2 (en) | 2017-08-03 | 2021-07-06 | Boe Technology Group Co., Ltd. | Pixel unit circuit, method of driving the same, pixel circuit and display device |
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