CN1767173A - Novel pretreatment method for alumina atom illuvium - Google Patents
Novel pretreatment method for alumina atom illuvium Download PDFInfo
- Publication number
- CN1767173A CN1767173A CN200410067501.8A CN200410067501A CN1767173A CN 1767173 A CN1767173 A CN 1767173A CN 200410067501 A CN200410067501 A CN 200410067501A CN 1767173 A CN1767173 A CN 1767173A
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- Prior art keywords
- layer
- alumina
- aluminum oxide
- atomic layer
- deposition furnace
- Prior art date
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 238000002203 pretreatment Methods 0.000 title claims description 10
- 238000000151 deposition Methods 0.000 claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 27
- 229920005591 polysilicon Polymers 0.000 claims abstract description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 47
- 238000000231 atomic layer deposition Methods 0.000 claims description 33
- 229910004205 SiNX Inorganic materials 0.000 claims description 21
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 21
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 14
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 1
- 238000011221 initial treatment Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 22
- 239000003990 capacitor Substances 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 238000010586 diagram Methods 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention provides a new initial treatment method of alumina atom illurium which comprises the step of depositing silicon nitride layer on the polysilicon hemi-spherical grid surface in the same alumina atom depositing oven and the step of depositing the alumina media layer.
Description
Technical Field
The invention relates to a method for manufacturing a semiconductor device, in particular to a novel pretreatment method of a capacitor dielectric aluminum oxide atom deposition layer in a Dynamic Random Access Memory (DRAM).
Background
As a new type of capacitor dielectric, alumina has been commonly introduced in 0.13 micron and sub-0.13 micron DRAM technology. Atomic deposition (ALD) is the most commonly used method for aluminum oxide deposition.
Typically, the bottom electrode of a capacitor in a Dynamic Random Access Memory (DRAM) is comprised of polysilicon. A dielectric layer and a capacitor top electrode are deposited thereon. The ALD alumina dielectric layer is composed of Trimethylaluminum (TMA) and ozone (O)3) Or water vapor (H)2O) is chemically reacted. Due to ozone (O)3) Or water vapor (H)2O) will form silicon dioxide (SiO) with the polysilicon bottom electrode2) And silicon oxide (SiO)2Has a dielectric constant of 3.8) is smaller than that of aluminum oxide (Al)2O3Dielectric constant of (2) is 10), and in order to increase the capacitance of the capacitor, it is necessary to increase the dielectric constant of the dielectric layer to prevent the formation of silicon dioxide (SiO)2). For this purpose, a pretreatment is formed before forming an alumina dielectric layer, and a silicon nitride (SiNx) protective layer is formed on the surface of the polysilicon hemispherical gate layer.
In the present general method for manufacturing a capacitor in a Dynamic Random Access Memory (DRAM), a pretreatment method before forming an aluminum oxide atom deposition layer dielectric includes the steps of:
Step 4, placing the wafer after the steps 1 to 3 in a reaction chamber, and introducing the reaction chamberTrimethylaluminum (TMA) and ozone (O)3) Or water vapor (H)2O), chemically reacting trimethylaluminum with ozone or water vapor, the specific chemical reaction formula being:
then on silicon nitride (Si)3N4Or SiNx) Alumina (Al) was deposited to a thickness of 50 Å a on the protective layer2O3) A dielectric layer.
The above-mentioned prior pretreatment method can prevent deposition of alumina (Al)2O3) In the process step of the dielectric layer, polysilicon reacts with oxygen to form a silicon oxide layer (SiO)2) However, conventionally, silicon nitride (Si) is formed3N4Or SiNx) The pretreatment method of the protective layer, the pretreatment step and the subsequent alumina dielectric layer forming step are carried out in different equipment, and have the defects of difficult operation, long process flow, easy pollution, more used equipment and high manufacturing cost.
Disclosure of Invention
To overcome the existing formation of silicon nitride (Si)3N4Or SiNx) The present invention is proposed to solve the disadvantages of the pretreatment method of the protective layer.
The DRAM capacitor forming method according to the present invention includes
step 4, performing nitrogen treatment on the surface of the HSG in an Atomic Layer Deposition (ALD) furnace or a reaction chamber to form SiNx;
step 5, ALD Al deposition in the same furnace as the pretreatment2O3；
And 6, depositing a polysilicon top electrode.
The method for pretreating an alumina atom deposition layer according to the present invention comprises the steps of:
step 4, the wafer processed in step 3 is not treated with alumina (Al)2O3) Taking out the atomic layer deposition furnace, and directly introducing Trimethylaluminum (TMA) and ozone (O) into the aluminum oxide atomic layer deposition furnace3) Or water vapor (H)2O), mixing Trimethylaluminum (TMA) and ozone (O)3) Or water vapor (H)2O) and the specific chemical reaction formula is:
in silicon nitride (Si)3N4Or SiNx) Alumina (Al) was deposited to a thickness of 50 Å a on the protective layer2O3) A dielectric layer.
And the step 3 and the step 4 are carried out in the same aluminum oxide atomic layer deposition furnace.
Drawings
The objectives and other advantages of the invention will be better understood from the following description taken in conjunction with the accompanying drawings, which are a part of the specification, illustrate, together with the written description, the principles and features of the invention, and together with the description, show embodiments thereof which are representative of the principles and features of the invention. Like parts are designated by like reference numerals throughout the several views of the drawings, in which:
FIG. 1A is a schematic diagram of a conventional DRAM capacitor formation step 1, a DRAM capacitor hole etch formation step;
FIG. 1B is a schematic diagram of a DRAM capacitor formation step 1, a DRAM capacitor hole etch formation step, in accordance with the present invention;
FIG. 2A shows a conventional DRAM capacitor formation step 2, SiO2Schematic diagram of isolation layer formation step;
FIG. 2B is a DRAM capacitor formation step 2, SiO2Schematic diagram of isolation layer formation step;
FIG. 3A is a schematic diagram of a prior art DRAM capacitor formation step 3, silicon hemispherical grain (HSG) formation step in an oven;
FIG. 3B is a schematic diagram of the formation step 3 of silicon hemispherical grains (HSG) in an oven according to DRAM capacitor formation step of the present invention;
FIG. 4A is a schematic diagram of a prior art DRAM capacitor formation step 4, SiNx formation by nitrogen treatment of HSG surfaces in a furnace or CVD reactor;
FIG. 4B is a schematic diagram of the SiNx formation step of nitrogen treatment of HSG surfaces in an Atomic Layer Deposition (ALD) furnace or chamber in accordance with DRAM capacitor formation step 4 of the present invention;
FIG. 5A shows a prior art DRAM capacitor formation step 5 of depositing Atomic Layer Deposition (ALD) Al in an ALD furnace2O3A schematic diagram of the steps;
FIG. 5B shows a DRAM capacitor formation step 5 of ALD Al deposition in the same furnace as the pretreatment step2O3A schematic diagram of the steps;
FIG. 6A is a schematic diagram of a prior art DRAM capacitor formation step 6, a polysilicon top electrode deposition step;
FIG. 6B is a schematic diagram of the DRAM capacitor formation step 6, the step of depositing the polysilicon top electrode, in accordance with the present invention.
Description of the content indicated by reference numerals in the drawings:
1-SiO2 barrier layer (Isolation SiO 2);
2-storage junction polysilicon contact (Stroage node contact poly)
Detailed Description
[ example 1]
The pretreatment method of the aluminum oxide atom deposition layer according to one technical scheme of the invention comprises the following steps:
step 4, the wafer processed in the step 3 is not taken out of the aluminum oxide atomic layer deposition furnace,depositing aluminum oxide (Al) in the same aluminum oxide atomic layer deposition furnace2O3) Direct introduction of Trimethylaluminum (TMA) and water vapor (H) into an alumina atomic layer deposition furnace2O), and carrying out chemical reaction on trimethyl aluminum and water vapor, wherein the specific chemical reaction formula is as follows:
in silicon nitride (Si)3N4Or SiNx) protective layer with a thickness of 50 Å a of aluminum oxide (Al)2O3)。
According to the method, the step 3 and the step 4 are carried out in the same atomic layer deposition furnace, and a silicon nitride (SiNx) protective layer and aluminum oxide (Al) are sequentially deposited2O3) A dielectric layer.
[ example 2]
The pretreatment method of the alumina atom deposition layer according to another technical scheme of the invention comprises the following steps:
step 4, the wafer processed in the step 3 is not taken out of the aluminum oxide atomic layer deposition furnace, trimethyl aluminum (TMA) and ozone are directly introduced into the atomic layer deposition furnace, so that the trimethyl aluminum and the ozone are subjected to chemical reaction, and the specific chemical reaction formula is as follows:
in silicon nitride (Si)3N4Or SiNx) Alumina (Al) was deposited to a thickness of 50 Å a on the protective layer2O3)。
According to the method, the step 3 and the step 4 are carried out in the same atomic layer deposition furnace, and a silicon nitride (SiNx) protective layer and aluminum oxide (Al) are sequentially deposited2O3) A dielectric layer.
It will be appreciated by those skilled in the art that the present invention can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. Therefore, in accordance with the overall teachings of the present invention, the illustrated examples and embodiments are intended to be illustrative rather than restrictive, and the invention is not to be limited to the details given herein. The scope of the invention is defined by the appended claims.
Claims (3)
1. A novel pretreatment method for an alumina atom deposition layer, comprising the steps of:
step 1 of depositing a polysilicon gate layer having a thickness of 400 Å to 500 Å and then,
step 2: performing heat treatment to form polysilicon hemispherical crystals so as to increase the surface area of the polysilicon gate layer;
and step 3: performing pretreatment, placing the wafer obtained after completing step 1 and step 2 into the deposition chamber for depositing aluminum oxide (Al)2O3) Atomic layer of alumina in an atomic layer deposition furnace, alumina (Al)2O3) Atomic layer deposition furnace introduction of NH3 or N2Treating the mixture of O gas and argon (Ar) or helium (He) or nitrogen (N2) at 500-700 deg.C to form a silicon nitride (SiNx) layer with a thickness of 5 Å -40 Å;
and 4, step 4: the wafer processed in the step 3 is not taken out of the atomic layer deposition furnace, and aluminum oxide (Al) is deposited in the same aluminum oxide atomic layer deposition furnace2O3) Direct introduction of Trimethylaluminum (TMA) and ozone (O) into an alumina atomic layer deposition furnace3) Or water vapor (H)2O), chemically reacting trimethylaluminum with ozone or water vapor, the specific chemical reaction formula being:
in silicon nitride (Si)3N4Or SiNx) Alumina (Al) was deposited to a thickness of 50 Å a on the protective layer2O3)，
The method is characterized in that the step 3 and the step 4 are carried out in the same aluminum oxide atomic layer deposition furnace, and a silicon nitride (SiNx) protective layer and aluminum oxide (Al) are sequentially deposited2O3) A dielectric layer.
2. A process according to claim 1, characterized in that Trimethylaluminum (TMA) and ozone (O) are used in step 43) React to form alumina (Al)2O3) The medium layer is formed by reacting a first metal oxide, 。
3. a process according to claim 1, wherein Trimethylaluminum (TMA) and steam (H) are used in step 42O) reaction to form alumina (Al)2O3) The medium layer is formed by reacting a first metal oxide, 。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100675018A CN1324689C (en) | 2004-10-26 | 2004-10-26 | Novel pretreatment method for alumina atom illuvium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100675018A CN1324689C (en) | 2004-10-26 | 2004-10-26 | Novel pretreatment method for alumina atom illuvium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1767173A true CN1767173A (en) | 2006-05-03 |
| CN1324689C CN1324689C (en) | 2007-07-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100675018A Expired - Fee Related CN1324689C (en) | 2004-10-26 | 2004-10-26 | Novel pretreatment method for alumina atom illuvium |
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157559A (en) * | 2013-05-14 | 2014-11-19 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of control gate and manufacture method of floating gate |
| CN104658894A (en) * | 2015-03-10 | 2015-05-27 | 中国科学院微电子研究所 | Low interface state device and method of making same |
| CN110767757A (en) * | 2019-09-18 | 2020-02-07 | 广东爱旭科技有限公司 | Efficient PERC battery back alumina film and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5705080A (en) * | 1994-07-06 | 1998-01-06 | Applied Materials, Inc. | Plasma-inert cover and plasma cleaning process |
| KR100424705B1 (en) * | 1999-04-02 | 2004-03-27 | 실리콘 밸리 그룹 써어멀 시스템즈, 엘엘씨 | Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth |
| JP2000345319A (en) * | 1999-05-31 | 2000-12-12 | Tokyo Electron Ltd | Manufacture of transmission window, transmission window, and processing device using the same |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157559A (en) * | 2013-05-14 | 2014-11-19 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of control gate and manufacture method of floating gate |
| CN104658894A (en) * | 2015-03-10 | 2015-05-27 | 中国科学院微电子研究所 | Low interface state device and method of making same |
| US10276366B2 (en) | 2015-03-10 | 2019-04-30 | Institute of Microelectronics, Chinese Academy of Sciences | Low interface state device and method for manufacturing the same |
| CN110767757A (en) * | 2019-09-18 | 2020-02-07 | 广东爱旭科技有限公司 | Efficient PERC battery back alumina film and preparation method thereof |
| CN110767757B (en) * | 2019-09-18 | 2022-02-08 | 广东爱旭科技有限公司 | Efficient PERC battery back alumina film and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN1324689C (en) | 2007-07-04 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111123 |
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Effective date of registration: 20111123 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Granted publication date: 20070704 Termination date: 20181026 |