CN1766596A - Method for determining metal film/substrate interface fatigue performance by Ampere's force - Google Patents

Method for determining metal film/substrate interface fatigue performance by Ampere's force Download PDF

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Publication number
CN1766596A
CN1766596A CN 200510096108 CN200510096108A CN1766596A CN 1766596 A CN1766596 A CN 1766596A CN 200510096108 CN200510096108 CN 200510096108 CN 200510096108 A CN200510096108 A CN 200510096108A CN 1766596 A CN1766596 A CN 1766596A
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metallic film
film
font
worker
mental
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CN 200510096108
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CN100370244C (en
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孙军
刘刚
胡巍
宋忠孝
徐可为
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Xian Jiaotong University
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Xian Jiaotong University
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Abstract

The invention discloses a method for using ampere force to measure mental foil/base plate interface fatigue capacity, which adopts etch technology to repeat the needed word graph on the base plate material with photo-resist with the line width 1-10 micron; the thickness of the mental foil is 200 nanometer to 5 micron; it obtains the word mental foil material on the base plate material; the mental foil part of the two ends are used to connect the out power when adding the current; it parallel dispositions the mental foil part of the 'I' character on the externally-applied magnetic field with 0-6T measured rage on the impact of the AC to generate 5-20MPa ampere force. It adopts optical microscope to observe the strip of mental foil and dynamically monitors the fatigue ineffective of the mental foil.

Description

Utilize Amp to measure the method for metallic film/substrate interface fatigue performance
Technical field
The present invention relates to a kind of assay method of fatigue of materials performance, specially refer to a kind of method of testing metallic film/substrate interface fatigue performance.
Background technology
The topmost failure mode of attached type membraneous material is the fatigure failure or the unsticking at interface between film and the substrate, for the attached type membraneous material that is used for industry in a large number, studies its interface fatigue performance and has epochmaking practical significance.
Because film dimensions is very little, therefore in the test of film base combination, there is very big difficulty.Quantitative Assessment Method commonly used at present has scarification, plunging etc., but influence factor is a lot of when measuring with these methods, comprises that non-interface factors such as film and substrate hardness, thicknesses of layers, film toughness, loading velocity, pressure head or scriber geometric configuration all may produce very big influence to measurement result.In addition, these methods all are disposable loadings, and under actual condition, workpiece is on active service under alterante stress mostly, and peeling off of film is the engineering of a long-time high cycle, and failure procedure belongs to fatigue failure.So present method is difficult to record more accurate interface fatigue performance.
The performance of measuring film base interface by applied stress load can be because the uncertainty and the nonrepeatability of stress state make measured value far depart from actual value, Comparatively speaking, if in film, produce the especially inner alterante stress of internal stress, just can reduce the influence of each non-interface factor widely, record the film base interface fatigue performance more identical with actual value.
Summary of the invention
The purpose of this invention is to provide a kind of method of utilizing Amp to measure metallic film/substrate interface fatigue performance, by in film, producing controlled inside alterante stress, be subjected to test membrane base interface fatigue performance under the minimum situation of non-interface factor affecting, having simple, accurate advantage.
Technical scheme of the present invention is achieved in that and may further comprise the steps:
(1) adopt photoetching technique with needed " worker " font graph copying on the baseplate material that scribbles the anti-glue of photoetching, live width 1-10 micron;
(2) by evaporation coating technique metallic film is deposited on the substrate that duplicates " worker " font figure equably, thickness of metal film is controlled, and scope is 200 nanometers to 5 micron;
(3) after the process second development is peeled off, what obtain on baseplate material is protruding " worker " font metallic film material, " I " font metallic film in the middle of it partly is the Validity Test part, is connected with external power source when the metallic film part at two ends then is used to add electric current;
(4) power supply of connection 0-12A on the metallic film two ends partly is in the extrinsic current loop metallic film of " I " font;
(5) will be in " I " font under the alternating current effect the metallic film partial parallel to place range be the externally-applied magnetic field of 0-6T, produce the Amp of 5-20MPa, the effect meeting of Amp partly produces alterante stress perpendicular to the metallic film plane at the test metallic film of " I " font, it is tired that metallic film is produced, and is defined as fatigue failure when metallic film/substrate interface destruction or unsticking;
(6) employing optical microscope home position observation metallic film peels off the fatigue failure of dynamic monitoring metallic film.
Metallic film material can be any conducting metal, and baseplate material is any electrically non-conductive material, if baseplate material has certain electric conductivity, must adopt the titanium nitride TiN transition bed of magnetron sputtering method deposition 0.2-2.0 micron thickness earlier between metallic film and baseplate material.
The present invention can directly measure the fatigue behaviour at film base interface, various tests such as the too many shortcoming of external influence factors such as scarification, plunging before having avoided, the present invention simultaneously need not draw fatigue behaviour under the prerequisite of computation model, overcome with the deficiency on the Pretesting.
Description of drawings
Fig. 1 is the structure vertical view of metallic film/substrate interface of the present invention;
Fig. 2 is the structural side view of metallic film/substrate interface of the present invention.
Embodiment
Below in conjunction with embodiment content of the present invention is further elaborated:
Shown in Fig. 1,2, " worker " font metallic film sample 1 is deposited on the substrate 2, and wherein Zhong Jian " I " font metallic film partly is the Validity Test part, is connected with external power source 4 when the metallic film part at two ends then is used to add electric current.After feeding exchange current, with the metallic film partial parallel of " I " font place and add steady magnetic field 3 and can produce alternation ampere stress 5 perpendicular to thin film planar.
Feed in metallic film and exchange (direct current) electric current, and place under stable state (pulse) magnetic field, will produce the alternation Amp in the film, film takes place tired under the effect of this alternation internal stress.The big or small P of known unit area Amp or interior pressure and strength of current I, magnetic induction density B are relevant with thin-film width b:
P = Σf a × b = I × B b
∑ f is an Amp in the formula, and a is a film thickness, can regulate strength of current or induction level artificially, in film, obtain a series of in pressure width of cloth Δ P.Record different under the pressure width of cloth Δ P film to the circulation cycle N that interface peel experienced, paint Δ P-N curve, the interior pressure width of cloth Δ P at d in the curve (Δ P)/dN absolute value place of uprushing is the fatigue strength of film/substrate interface.
Embodiment 1:
Adopt photoetching technique with needed " worker " font graph copying scribble the anti-glue of photoetching on the Si of oxidation processes substrate, live width is 1 micron.Metal Cu film is deposited to equably on the substrate that duplicates " worker " font figure by vapour deposition method, thickness of metal film is 5 microns.After the process second development is peeled off, on baseplate material, obtain " worker " font metallic film material of projection.Indirect current source in metallic film, maximum current intensity are 12A, metallic film are placed abreast add steady magnetic field, and induction level is respectively 0.5,1.0,1.5,2.0,2.5,3.0,3.5,4.0 4.5 and 6.0 T are to obtain different interior pressure width of cloth Δ P.Adopt peeling off of optical microscope home position observation film, the fatigue failure of dynamic monitoring film, the circulation cycle N when obtaining the inefficacy critical conditions.Draw Δ P-N curve, the fatigue strength that obtains film/substrate interface is 10MPa.
Embodiment 2:
Adopt photoetching technique with needed " worker " font graph copying scribble the anti-glue of photoetching on the Si of oxidation processes substrate, live width is 5 microns.Metal Cu film is deposited to equably on the substrate that duplicates " worker " font figure by vapour deposition method, thickness of metal film is 200 nanometers.After the process second development is peeled off, on baseplate material, obtain " worker " font metallic film material of projection.Indirect current source in metallic film, maximum current intensity is respectively 1.0,2.0, and 3.0,4.0,5.0,6.0,7.0,8.0,9.0, and 10.0A, metallic film being placed abreast add steady magnetic field, induction level is 6.0T, to obtain different interior pressure width of cloth Δ P.Adopt peeling off of optical microscope home position observation film, the fatigue failure of dynamic monitoring film, the circulation cycle N when obtaining the inefficacy critical conditions.Draw Δ P-N curve, the fatigue strength that obtains film/substrate interface is 8.7MPa.
Embodiment 3:
Adopt photoetching technique with needed " worker " font graph copying scribble the anti-glue of photoetching on the Si of oxidation processes substrate, live width is 5 microns.Metal Cu film is deposited to equably on the substrate that duplicates " worker " font figure by vapour deposition method, thickness of metal film is 1 micron.After the process second development was peeled off, what obtain on baseplate material was protruding " worker " font metallic film material.Perfectly straight stream power supply in metallic film, strength of current is 10A, and metallic film is placed applying pulse magnetic field abreast, induction level is respectively 0.5,1.0,1.5,2.0,2.5,3.0,3.5,4.0 4.5 and 5.9 T are to obtain different interior pressure width of cloth Δ P.Adopt peeling off of optical microscope home position observation metallic film, the fatigue failure of dynamic monitoring film, the circulation cycle N when obtaining the inefficacy critical conditions.Draw Δ P-N curve, the fatigue strength that obtains film/substrate interface is 12.4MPa.
Embodiment 4:
Adopt photoetching technique with needed " worker " font graph copying scribble the anti-glue of photoetching on the Si of oxidation processes substrate, live width is 10 microns.Metal Cu film is deposited to equably on the substrate that duplicates " worker " font figure by vapour deposition method, thickness of metal film is 5 microns.After the process second development was peeled off, what obtain on baseplate material was protruding " worker " font metallic film material.Perfectly straight stream power supply in metallic film, strength of current is respectively 1.0,2.0, and 3.0,4.0,5.0,6.0,7.0,8.0,9.0, and 10.0A, metallic film is placed applying pulse magnetic field abreast, induction level is 5.0T, to obtain different interior pressure width of cloth Δ P.Adopt peeling off of optical microscope home position observation film, the fatigue failure of dynamic monitoring film, the circulation cycle N when obtaining the inefficacy critical conditions.Draw Δ P-N curve, the fatigue strength that obtains film/substrate interface is 13.5MPa.
Embodiment 5:
Adopt photoetching technique with needed " worker " font graph copying scribble the anti-glue of photoetching on the Si of oxidation processes substrate, live width is 8 microns.Metal Cu film is deposited to equably on the substrate that duplicates " worker " font figure by vapour deposition method, thickness of metal film is 1 micron.After the process second development was peeled off, what obtain on baseplate material was protruding " worker " font metallic film material.Indirect current source in metallic film, maximum current intensity are 10A, metallic film are placed abreast add steady magnetic field, and induction level is respectively 0.5,1.0,1.5,2.0,2.5,3.0,3.5,4.0 4.5 and 5.9 T are to obtain different interior pressure width of cloth Δ P.Adopt peeling off of optical microscope home position observation film, the fatigue failure of dynamic monitoring film, the circulation cycle N when obtaining the inefficacy critical conditions.Draw Δ P-N curve, the fatigue strength that obtains film/substrate interface is 12.9MPa.
Embodiment 6:
Adopt photoetching technique with needed " worker " font graph copying scribble the anti-glue of photoetching on the Si of oxidation processes substrate, live width is 8 microns.Metal Cu film is deposited to equably on the substrate that duplicates " worker " font figure by vapour deposition method, thickness of metal film is 2 microns.After the process second development is peeled off, on baseplate material, obtain " worker " font metallic film material of projection.Perfectly straight stream power supply in metallic film, strength of current is 10A, and metallic film is placed applying pulse magnetic field abreast, induction level is respectively 0.5,1.0,1.5,2.0,2.5,3.0,3.5,4.0 4.5 and 5.9 T are to obtain different interior pressure width of cloth Δ P.Adopt peeling off of optical microscope home position observation film, the fatigue failure of dynamic monitoring film, the circulation cycle N when obtaining the inefficacy critical conditions.Draw Δ P-N curve, the fatigue strength that obtains film/substrate interface is 11.1MPa.
Embodiment 7:
Adopt photoetching technique with needed " worker " font graph copying scribble the anti-glue of photoetching on the Si of oxidation processes substrate, live width is 5 microns.Metal Cu film is deposited to equably on the substrate that duplicates " worker " font figure by vapour deposition method, thickness of metal film is 5 microns.After the process second development was peeled off, what obtain on baseplate material was protruding " worker " font metallic film material.Indirect current source in metallic film, maximum current intensity are 3A, metallic film are placed abreast add steady magnetic field, and induction level is respectively 0.5,1.0,1.5,2.0,2.5,3.0,3.5,4.0 4.5 and 5.9 T are to obtain different interior pressure width of cloth Δ P.Adopt peeling off of optical microscope home position observation metallic film, the fatigue failure of dynamic monitoring film, the circulation cycle N when obtaining the inefficacy critical conditions.Draw Δ P-N curve, the fatigue strength that obtains film/substrate interface is 6MPa.
Embodiment 8:
Adopt photoetching technique with needed " worker " font graph copying scribble the anti-glue of photoetching on the Si of oxidation processes substrate, live width is 8 microns.Metal Cu film is deposited to equably on the substrate that duplicates " worker " font figure by vapour deposition method, thickness of metal film is 2 microns.After the process second development was peeled off, what obtain on baseplate material was protruding " worker " font metallic film material.Perfectly straight stream power supply in metallic film, strength of current is 7A, and metallic film is placed applying pulse magnetic field abreast, induction level is respectively 0.5,1.0,1.5,2.0,2.5,3.0,3.5,4.0 4.5 and 5.9 T are to obtain different interior pressure width of cloth Δ P.Adopt peeling off of optical microscope home position observation film, the fatigue failure of dynamic monitoring film, the circulation cycle N when obtaining the inefficacy critical conditions.Draw Δ P-N curve, the fatigue strength that obtains film/substrate interface is 9.2MPa.

Claims (2)

1. utilize Amp to measure the method for metallic film/substrate interface fatigue performance, it is characterized in that, may further comprise the steps:
(1) adopt photoetching technique with needed " worker " font graph copying on the baseplate material that scribbles the anti-glue of photoetching, live width 1-10 micron;
(2) by evaporation coating technique metallic film is deposited on the baseplate material that duplicates " worker " font figure equably, thickness of metal film is controlled, and scope is 200 nanometers to 5 micron;
(3) after the process second development is peeled off, on baseplate material, obtain " worker " font metallic film material of projection, " I " font metallic film in the middle of it partly is the Validity Test part, is connected with external power source when the metallic film part at two ends then is used to add electric current;
(4) at the power supply of metallic film two ends connection 0-12A, the metallic film of " I " font partly is in the extrinsic current loop;
(5) will be in " I " font under the alternating current effect the metallic film partial parallel to place range be the externally-applied magnetic field of 0-6T, produce the Amp of 5-20MPa, the effect meeting of Amp partly produces alterante stress perpendicular to the metallic film plane at the test metallic film of " I " font, it is tired that metallic film is produced, and is defined as fatigue failure when metallic film/substrate interface destruction or unsticking;
(6) employing optical microscope home position observation metallic film peels off the fatigue failure of dynamic monitoring metallic film.
2. the method for utilizing Amp to measure metallic film/substrate interface fatigue performance according to claim 1, it is characterized in that, metallic film material can be any conducting metal, baseplate material is any electrically non-conductive material, if baseplate material has certain electric conductivity, between metallic film and baseplate material, must deposit the titanium nitride TiN transition bed of 0.2-2.0 micron thickness earlier with magnetron sputtering method.
CNB2005100961086A 2005-09-30 2005-09-30 Method for determining metal film/substrate interface fatigue performance by Ampere's force Expired - Fee Related CN100370244C (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101131382B (en) * 2006-08-25 2010-12-01 中国科学院金属研究所 System and method for testing performance of thin-film material under electricity/heat/force coupling action
CN102081140A (en) * 2010-12-03 2011-06-01 西安交通大学 Device for testing metallic film failure behaviors under the coupling of force, heat, power and magnetism multi-field
CN101236189B (en) * 2008-01-29 2012-01-04 西安交通大学 Device and method for measuring metal film stress evolution when loading current
CN105181476A (en) * 2015-08-05 2015-12-23 哈尔滨工业大学 Method and device for testing high temperature fatigue performance of thermal protection material
CN110161081A (en) * 2019-04-11 2019-08-23 浙江清华柔性电子技术研究院 Conductive film bend resistance performance measurement method and measuring device
CN112393987A (en) * 2020-05-29 2021-02-23 中国人民解放军陆军装甲兵学院 Method for analyzing influence of pulse magnetic field treatment on fatigue performance of transmission gear
CN114354413A (en) * 2021-12-16 2022-04-15 惠州市金山电子有限公司 Lead wire life tester, lead wire life testing system and lead wire life testing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6073493A (en) * 1997-01-10 2000-06-13 Nippon Steel Corporation Method of diagnosing fatigue life of structural steelwork and a member of steelwork having life diagnostic function
CN1598557A (en) * 2003-09-19 2005-03-23 中国科学院金属研究所 Method for detecting fatigue damage of metal structure

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101131382B (en) * 2006-08-25 2010-12-01 中国科学院金属研究所 System and method for testing performance of thin-film material under electricity/heat/force coupling action
CN101236189B (en) * 2008-01-29 2012-01-04 西安交通大学 Device and method for measuring metal film stress evolution when loading current
CN102081140A (en) * 2010-12-03 2011-06-01 西安交通大学 Device for testing metallic film failure behaviors under the coupling of force, heat, power and magnetism multi-field
CN102081140B (en) * 2010-12-03 2013-02-06 西安交通大学 Device for testing metallic film failure behaviors under the coupling of force, heat, power and magnetism multi-field
CN105181476A (en) * 2015-08-05 2015-12-23 哈尔滨工业大学 Method and device for testing high temperature fatigue performance of thermal protection material
CN110161081A (en) * 2019-04-11 2019-08-23 浙江清华柔性电子技术研究院 Conductive film bend resistance performance measurement method and measuring device
CN112393987A (en) * 2020-05-29 2021-02-23 中国人民解放军陆军装甲兵学院 Method for analyzing influence of pulse magnetic field treatment on fatigue performance of transmission gear
CN114354413A (en) * 2021-12-16 2022-04-15 惠州市金山电子有限公司 Lead wire life tester, lead wire life testing system and lead wire life testing method

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