CN100538319C - A kind of method of measuring yield strength of metal membrane at test current - Google Patents
A kind of method of measuring yield strength of metal membrane at test current Download PDFInfo
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- CN100538319C CN100538319C CNB2006101045787A CN200610104578A CN100538319C CN 100538319 C CN100538319 C CN 100538319C CN B2006101045787 A CNB2006101045787 A CN B2006101045787A CN 200610104578 A CN200610104578 A CN 200610104578A CN 100538319 C CN100538319 C CN 100538319C
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- stress
- yield strength
- metallic film
- metal membrane
- metal
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Abstract
The invention discloses a kind of method of measuring yield strength of metal membrane at test current, comprise with deposit metal films that on flexible base, boards such as polyimide its purpose is that the selection of this high resiliency flexible substrate material can realize the deduction of base plate stress at an easy rate.In current load and tensile load coupling loading procedure, certain tensile load will make metallic film produce surrender, combine good flexible base, board with its interface and then still be in the elastic deformation stage, at this moment, the stress that total stress deducts identical deformation infrabasal plate carrying is the interior stress of metallic film, and then can be scaled its intensity level.Metallic film powers on applying of load can be in the realization of directly switching on of two free ends of film.After applying electric load on the metallic film, can determine the yield strength of different current density metal membranes by stress-strain curve.
Description
Technical field
The present invention relates to the method for testing of the metallic film material yield strength in the industries such as microelectronics, particularly a kind of method of measuring yield strength of metal membrane at test current.
Background technology
The metallic film material (as Cu and Al) of metallization wiring is widely used in VLSI (very large scale integrated circuit) and the microelectromechanical systems (MEMS).Under the military service operating mode, these membraneous materials are under the electric loading usually, and its mechanical property will be subjected to current affects, but these membraneous materials must keep enough structural integrity and shapes not change again.Therefore, understand yield strength and the yield deformation behavior of metallic film material under electric load and become the practical problems that guarantees microelectronic material, device and equipment dependability operation and need to be resolved hurrily.
All the time, yield strength to metallic film has all given great concern both at home and abroad, adopt several different methods such as nano impress method, cantilever method, eardrum method that the yield strength of metallic film is tested respectively, but in these method of testings, because applying electric current simultaneously has difficulties, the yield strength of relevant electric load metal membrane is but also never seen report, the measuring technology of relevant up to now electric load metal membrane yield strength also is not resolved, although electric load is the real service condition of metallic film material in the industry such as microelectronics.
Summary of the invention
The objective of the invention is to overcome above-mentioned prior art deficiency, a kind of method of measuring yield strength of metal membrane at test current is provided, this method is simple to operation, measures accurately high.
On two free ends of metallic film, directly apply electric load by current source, can the people current density size for a change, thereby can record different electric load metal membrane YIELD STRENGTH.Because current density is less, its scope only is 1 * 10
3-1 * 10
4A/m
2, so little current density can be avoided metallic film generation oxidation behavior.A kind of new method of testing electric load metal membrane yield strength is provided thus.
Technical scheme of the present invention is achieved in that according to the following steps carries out:
(1) adopt the magnetron sputtering deposition method with deposit metal films on the polyimide flexible base, board, its elastic strain 〉=5%; Thickness of metal film 200 nanometers-20 micron; Deposition process parameters is: sputtering power 120-180W; Sputtering bias-voltage-60--80V; Background air pressure 3.0 * 10
-3-4.5 * 10
-3Pa; Operating air pressure (Ar) 0.5-1.5Pa;
(2) metallic film power on load to apply by range be that the constant current source of 12V acts directly on two free ends of metallic film and realizes that current density range is 1 * 10
3-1 * 10
4A/m
2
(3) adopting range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine the yield strength of electric load metal membrane.
A difficult problem that adopts method of the present invention can't power up during the MEASUREMENTS OF THIN yield strength before can overcoming is implemented in and measures yield strength when powering up on the film, the resistance capacity to deformation of quantitative measurement electricity load military service situation metallic film.
Description of drawings
Fig. 1 (a) is a method of testing structure side view of the present invention;
Fig. 1 (b) is a method of testing structure vertical view of the present invention.
Below in conjunction with embodiment content of the present invention is further elaborated:
Embodiment
With reference to accompanying drawing 1 (a) and (b), metallic film 1 two ends that are deposited on the polyimide matrix are clamped by little puller system dop 2 respectively, and little puller system dop 2 contacts electrical loading apparatus respectively toward external metallic film 1 both sides free end, to apply current load.
Embodiment 1:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt magnetron sputtering technique with metal Cu thin film deposition on effective workspace, thickness of metal film 200 nanometers.Deposition process parameters is: sputtering power 120; Sputtering bias-voltage-60V; Background air pressure 3.0 * 10
-3Operating air pressure (Ar) 0.5Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 1 * 10
3A/m
2The employing range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine 1 * 10
3A/m
2The yield strength of 200 nanometer metallic films is 820MPa under the current density.
Embodiment 2:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt magnetron sputtering technique with metal Cu thin film deposition on effective workspace, 20 microns of thickness of metal film.Deposition process parameters is: sputtering power 180; Sputtering bias-voltage-80V; Background air pressure 4.5 * 10
-3Operating air pressure (Ar) 1.5Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 1 * 10
3A/m
2The employing range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine 1 * 10
3A/m
2The yield strength of 20 micron metal films is 415MPa under the current density.
Embodiment 3:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt magnetron sputtering technique with metal Cu thin film deposition on effective workspace, thickness of metal film 200 nanometers.Deposition process parameters is: sputtering power 180; Sputtering bias-voltage-80V; Background air pressure 4.5 * 10
-3Operating air pressure (Ar) 1.5Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 1 * 10
4A/m
2The employing range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine 1 * 10
3A/m
2The yield strength of 20 micron metal films is 667MPa under the current density.
Embodiment 4:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt magnetron sputtering technique with metal Cu thin film deposition on effective workspace, 20 microns of thickness of metal film.Deposition process parameters is: sputtering power 180; Sputtering bias-voltage-80V; Background air pressure 4.5 * 10
-3Operating air pressure (Ar) 1.5Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 1 * 10
4A/m
2The employing range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine 1 * 10
3A/m
2The yield strength of 20 micron metal films is 241MPa under the current density.
Embodiment 5:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt magnetron sputtering technique with metal Cu thin film deposition on effective workspace, 10 microns of thickness of metal film.Deposition process parameters is: sputtering power 180; Sputtering bias-voltage-80V; Background air pressure 4.5 * 10
-3Operating air pressure (Ar) 1.5Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 1 * 10
3A/m
2The employing range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine 1 * 10
3A/m
2The yield strength of 20 micron metal films is 673MPa under the current density.
Embodiment 6:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt magnetron sputtering technique with metal Cu thin film deposition on effective workspace, 5 microns of thickness of metal film.Deposition process parameters is: sputtering power 150; Sputtering bias-voltage-70V; Background air pressure 3.5 * 10
-3Operating air pressure (Ar) 1.0Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 5 * 10
3A/m
2The employing range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine 1 * 10
3A/m
2The yield strength of 20 micron metal films is 644MPa under the current density.
Embodiment 7:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt magnetron sputtering technique with metal Cu thin film deposition on effective workspace, thickness of metal film 400 nanometers.Deposition process parameters is: sputtering power 130; Sputtering bias-voltage-75V; Background air pressure 3.5 * 10
-3Operating air pressure (Ar) 1.0Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 7 * 10
3A/m
2The employing range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine 1 * 10
3Mm
2The yield strength of 20 micron metal films is 623MPa under the current density.
Embodiment 8:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt magnetron sputtering technique with metal Cu thin film deposition on effective workspace, 15 microns of thickness of metal film.Deposition process parameters is: sputtering power 150; Sputtering bias-voltage-70V; Background air pressure 3.5 * 10
-3Operating air pressure (Ar) 1.0Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 9 * 10
3A/m
2The employing range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine 1 * 10
3A/m
2The yield strength of 20 micron metal films is 315MPa under the current density.
Embodiment 9:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt magnetron sputtering technique with metal A l thin film deposition on effective workspace, 15 microns of thickness of metal film.Deposition process parameters is: sputtering power 150; Sputtering bias-voltage-70V; Background air pressure 3.5 * 10
-3Operating air pressure (Ar) 1.0Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 9 * 10
3A/m
2The employing range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine 1 * 10
3A/m
2The yield strength of 20 micron metal films is 364MPa under the current density.
Embodiment 10:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt magnetron sputtering technique with metal A g thin film deposition on effective workspace, 15 microns of thickness of metal film.Deposition process parameters is: sputtering power 150; Sputtering bias-voltage-70V; Background air pressure 3.5 * 10
-3Operating air pressure (Ar) 1.0Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 9 * 10
3A/m
2The employing range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine 1 * 10
3A/m
2The yield strength of 20 micron metal films is 298MPa under the current density.
Embodiment 11:
The polyimide flexible base, board is processed into traditional tensile sample shape, and (20 * 6mm) is the effective workspace of sample, and the roomy district at two ends is the stretching clamp area in middle long narrow district.Adopt magnetron sputtering technique with metal Fe thin film deposition on effective workspace, 15 microns of thickness of metal film.Deposition process parameters is: sputtering power 150; Sputtering bias-voltage-70V; Background air pressure 3.5 * 10
-3Operating air pressure (Ar) 1.0Pa.Sample is placed horizontally on little pulling experiment machine, and the stretching dop is clamping sample two ends respectively.Electricity is loaded chuck contact with metallic film tightly, constitute current return.Apply electric load and power load simultaneously, wherein current density is 9 * 10
3A/m
2The employing range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine 1 * 10
3A/m
2The yield strength of 20 micron metal films is 377MPa under the current density.
Claims (1)
1, a kind of method of testing electric load metal membrane yield strength is characterized in that, may further comprise the steps:
(1) adopt the magnetron sputtering deposition method with deposit metal films on the polyimide flexible base, board, its elastic strain 〉=5%; Thickness of metal film 200 nanometers-20 micron; Deposition process parameters is: sputtering power 120-180W; Sputtering bias-voltage-60--80V; Background air pressure 3.0 * 10
-3-4.5 * 10
-3Pa; Operating air pressure Ar 0.5-1.5Pa;
(2) metallic film power on load to apply by range be that the constant current source of 12V acts directly on two free ends of metallic film, current density range is 1 * 10
3-1 * 10
4A/m
2
(3) adopting range is the tensile stress-strain curve that little puller system of 250N is measured pure baseplate material, measure the tensile stress-strain curve of galvanization metal membrane/substrate system simultaneously, under the same strain condition, this two curves stress is subtracted each other, obtain the true stress-strain curve of electric load metal membrane, further can determine the yield strength of electric load metal membrane by the method for conventional 0.2% compensation.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101045787A CN100538319C (en) | 2006-09-15 | 2006-09-15 | A kind of method of measuring yield strength of metal membrane at test current |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101045787A CN100538319C (en) | 2006-09-15 | 2006-09-15 | A kind of method of measuring yield strength of metal membrane at test current |
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|---|---|
| CN1924548A CN1924548A (en) | 2007-03-07 |
| CN100538319C true CN100538319C (en) | 2009-09-09 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101236189B (en) * | 2008-01-29 | 2012-01-04 | 西安交通大学 | Device and method for measuring metal film stress evolution when loading current |
| CN102081140B (en) * | 2010-12-03 | 2013-02-06 | 西安交通大学 | Device for testing metallic film failure behaviors under the coupling of force, heat, power and magnetism multi-field |
| CN104502203B (en) * | 2015-01-08 | 2017-04-26 | 哈尔滨工业大学 | Testing device for current auxiliary type micro-stretching mechanical property of metal thin plate |
| CN106769477B (en) * | 2017-01-16 | 2019-04-05 | 重庆大学 | The determination method of axis load lower prestress circular membrane maximum stress |
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2006
- 2006-09-15 CN CNB2006101045787A patent/CN100538319C/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| Evaluation of the mechanical properties of thin metal films. Dejun Ma, Kewei Xu, et al.Surface and Coatings Technology,Vol.116-119 . 1999 |
| Evaluation of the mechanical properties of thin metal films. Dejun Ma, Kewei Xu, et al.Surface and Coatings Technology,Vol.116-119 . 1999 * |
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Effective date of registration: 20160414 Address after: 276017 science and technology innovation center of hi tech Industrial Development Zone, Shandong, Linyi province A317 Patentee after: Shandong cloud Mstar Technology Ltd Address before: 710049 Xianning Road, Shaanxi, China, No. 28, No. Patentee before: Xi'an Jiaotong University |
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