CN1757083B - Chip solid electrolyte capacitor - Google Patents
Chip solid electrolyte capacitor Download PDFInfo
- Publication number
- CN1757083B CN1757083B CN2004800058350A CN200480005835A CN1757083B CN 1757083 B CN1757083 B CN 1757083B CN 2004800058350 A CN2004800058350 A CN 2004800058350A CN 200480005835 A CN200480005835 A CN 200480005835A CN 1757083 B CN1757083 B CN 1757083B
- Authority
- CN
- China
- Prior art keywords
- electrolytic capacitor
- chip
- solid electrolytic
- type solid
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 133
- 239000007784 solid electrolyte Substances 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 239000011347 resin Substances 0.000 claims abstract description 20
- 239000007787 solid Substances 0.000 claims description 106
- 239000002322 conducting polymer Substances 0.000 claims description 17
- 229920001940 conductive polymer Polymers 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 239000010955 niobium Substances 0.000 claims description 10
- 230000003252 repetitive effect Effects 0.000 claims description 10
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical group O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 claims description 6
- 229910000464 lead oxide Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 229920000128 polypyrrole Polymers 0.000 claims description 5
- 229930192474 thiophene Natural products 0.000 claims description 5
- 241000790917 Dioxys <bee> Species 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- -1 cyanide quinoline bismethanes Chemical class 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 4
- 229920000123 polythiophene Polymers 0.000 claims description 4
- OXHNLMTVIGZXSG-UHFFFAOYSA-N 1-Methylpyrrole Chemical compound CN1C=CC=C1 OXHNLMTVIGZXSG-UHFFFAOYSA-N 0.000 claims description 3
- RPXVPCHYVYRQNW-UHFFFAOYSA-N 1h-indole;quinoline Chemical compound C1=CC=C2NC=CC2=C1.N1=CC=CC2=CC=CC=C21 RPXVPCHYVYRQNW-UHFFFAOYSA-N 0.000 claims description 3
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 238000003763 carbonization Methods 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 238000000866 electrolytic etching Methods 0.000 claims description 3
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 claims description 3
- 150000002240 furans Chemical class 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 3
- 229920000767 polyaniline Polymers 0.000 claims description 3
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 3
- 238000005987 sulfurization reaction Methods 0.000 claims description 3
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 4
- 238000000465 moulding Methods 0.000 abstract description 4
- 239000003792 electrolyte Substances 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 description 10
- 238000005245 sintering Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 150000001721 carbon Chemical group 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 239000006210 lotion Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000006071 cream Substances 0.000 description 3
- 229910052752 metalloid Inorganic materials 0.000 description 3
- 150000002738 metalloids Chemical class 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- JAJIPIAHCFBEPI-UHFFFAOYSA-N 9,10-dioxoanthracene-1-sulfonic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)O JAJIPIAHCFBEPI-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 206010010144 Completed suicide Diseases 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 1
- OOMYACICIIMLQI-UHFFFAOYSA-L lead(2+);diacetate;hydrate Chemical compound O.[Pb+2].CC([O-])=O.CC([O-])=O OOMYACICIIMLQI-UHFFFAOYSA-L 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000004706 metal oxides Chemical group 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
- H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
- H01G2/065—Mountings specially adapted for mounting on a printed-circuit support for surface mounting, e.g. chip capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
Abstract
A chip solid electrolyte capacitor with low ESR and small initial failure ratio comprising a plurality of solid electrolyte capacitor elements each produced by stacking a dielectric oxide film layer, a semiconductor layer and an electrically conducting layer in this order to form a cathode part on a surface of an anode substrate exclusive of the anode part at one end, the anode substrate comprising a sintered body of a valve-acting metal or an electrically conducting oxide or comprising the sintered body connected with a metal wire, which is a chip solid electrolyte capacitor obtained by horizontally laying the plurality of electrolyte capacitor elements in parallel with no space on a pair of oppositely disposed end parts of a lead frame such that the anode part or the metal wire and the cathode part come into contact with the lead frame, joining each element, and molding the entire with a resin while leaving outside the external terminal parts of the lead frame, wherein the volume ratio of one sintered body exclusive of the anode part to the chip volume is from 0.042 to 0.110; and an electronic instrument using the chip solid electrolyte capacitor.
Description
The cross reference of related application
This paper is the application of submitting to according to 35.U.S.C 111 (a), according to 35.U.S.C 119 (e) (1), requires the right in the U.S. Provisional Application 60/453,823 of submission on March 12nd, 2003 according to 35.U.S.C111 (b).
Technical field
The present invention relates to a kind of chip-type solid electrolytic capacitor, have low and leakage current (LC value) excellent specific property that initial disqualification rate is little of equivalent series resistance (ESR).
Background technology
Fig. 3 is the perspective view of chip-type solid electrolytic capacitor structure known to the expression usually, wherein adopt a solid electrolytic capacitor element (2), this element obtains by form insulation oxide layer, semiconductor layer and conductive layer successively on the sintered body surface of metal that comprises valve acting or conductive oxide; And wherein partially conductive layer and the positive wire that is connected with sintered body (4a) (anode part) are placed on the terminal part (1a and 1b) of pair of opposing, this terminal part is a part that constitutes the plate-shape metal making wire frame (1) of external terminal, and each part all is electrically connected or mechanical connection; It is whole resin molded and only the external terminal of lead frame is stayed the outside with chuck, forming chuck part (5), and with the lead frame outside predetermined portions cutting and the bending chuck part.
On the other hand, the nearest progress along with the electronic instrument high frequency is handled also requires solid electrolytic capacitor to have good high frequency performance.The inventor has proposed a kind of chip-type solid electrolytic capacitor that presents good high frequency performance value in JP-A-5-234829 (used term " JP-A " is meant " not examining open Japanese patent application " in the literary composition), wherein adopt a plurality of solid electrolytic capacitor element, each element obtains to form cathode portion on the anode substrate surface by stacking gradually insulation oxide layer, semiconductor layer and conductive layer, and described substrate has anode part and comprises the metal of valve acting; And wherein the part cathode portion is parallel lies on the terminal part of lead frame of the terminal part with pair of opposing every ground continuously, and anode part is placed on another terminal part; Each element all is electrically connected or mechanical connection; It is whole with resin molded and the part terminal part of lead frame is stayed the outside, and with the predetermined portions cutting with bend the lead frame of chuck portion of external.
Chip-type solid electrolytic capacitor is incorporated on the substrate with other electronic component, is assembled to then on the electronic instrument and also uses for many years.The expectation chip-type solid electrolytic capacitor has alap primary fault rate in the stage that is incorporated on the substrate.
Summary of the invention
When producing above-mentioned chip-type solid electrolytic capacitor with excellent high frequency performance, some capacitors are in time on the substrate that is welded defective on the primary fault rate (particularly LC value) a large amount of.
As for addressing these problems the result of the thoroughgoing and painstaking research of carrying out, the inventor has been found that when the sintered body that adopts the designated volume ratio is made chip-type solid electrolytic capacitor, the primary fault rate of made chip-type solid electrolytic capacitor is low and the ESR value is little, and described volume ratio is the volume of a sintered body except that anode part and the ratio of sheet volume.The present invention is based on this result of study realizes.
That is the electronic instrument that the present invention relates to following chip-type solid electrolytic capacitor and adopt this chip-type solid electrolytic capacitor.
1. chip-type solid electrolytic capacitor, comprise a plurality of solid electrolytic capacitor element, each element passes through with the insulation oxide rete, semiconductor layer and conductive layer make to form cathode portion on the anode substrate surface except that the anode part of one end with this sequence stack, anode substrate comprises the sintered body of the metal of valve acting or conductive oxide or comprises the sintered body that is connected with plain conductor, this capacitor is a kind of like this chip-type solid electrolytic capacitor: on the terminal part of its pair of opposing by the parallel first compartment of terrain of a plurality of electrolytic capacitor component level being placed on lead frame, thereby anode part can be contacted with lead frame with cathode portion, connect each element, and with resin molded it is whole but the outside is partly stayed in the external cabling of lead frame and obtained, wherein the volume of a sintered body except that anode part and sheet volume ratio be 0.042-0.110.
As above 1 described in chip-type solid electrolytic capacitor, wherein anode part comprises the end of anode substrate.
As above 1 described in chip-type solid electrolytic capacitor, wherein anode part comprises the plain conductor that is connected with sintered body.
4. as the chip-type solid electrolytic capacitor described in above 3, wherein plain conductor is selected from tantalum, niobium, aluminium, titanium, mainly comprises the alloy of this metalloid and these metals and the alloy of partial oxidation and/or nitrogenize.
5. as the chip-type solid electrolytic capacitor described in above 1, wherein the metal of valve acting or conductive oxide be tantalum, aluminium, niobium, titanium, mainly comprise this class valve acting metal alloy or niobium oxide or be selected from metal, alloy and the conductive oxide of these valve actings two or more mixture.
6. the chip-type solid electrolytic capacitor described in above 4 wherein makes metal, alloy or at least a processing that is selected from carbonization, phosphatization, boronation, nitrogenize and sulfuration of conductive oxide experience of valve acting.
As above 1 described in chip-type solid electrolytic capacitor, wherein sintered body has the surface of chemistry and/or electroetching.
8. the chip-type solid electrolytic capacitor described in above 1 wherein insulate the interface between anode part and the part except that anode part with insulating resin.
9. as the chip-type solid electrolytic capacitor described in above 1, wherein the insulation oxide rete mainly comprises and is selected from Ta
2O
5, Al
2O
3, Zr
2O
3And Nb
2O
5At least a.
As above 1 described in chip-type solid electrolytic capacitor, wherein semiconductor layer is be selected from organic semiconductor layer and inorganic semiconductor layer at least a.
11. as the chip-type solid electrolytic capacitor described in above 10, wherein organic semiconductor be selected from following at least a: comprise the tetramer of benzopyrrole quinoline and the organic semiconductor of chloranil, the organic semiconductor that mainly comprises the organic semiconductor of four sulphur aphthacenes, mainly comprises the organic semiconductor of four cyanide quinoline bismethanes and mainly comprise conducting polymer, this conducting polymer obtains by dopant being doped in the polymer that comprises by the repetitive of following formula (1) or (2) representative:
R wherein
1-R
4Identical or different, represent hydrogen atom independently of one another, have the alkyl of 1-6 carbon atom or have the alkoxyl of 1-6 carbon atom; X represention oxygen atom, sulphur atom or nitrogen-atoms; R
5Only when X is nitrogen-atoms, just exist, and represent hydrogen atom or have the alkyl of 1-6 carbon atom; R
1With R
2And R
3With R
4In the every pair of looping structure that can mutually combine.
12. the chip-type solid electrolytic capacitor described in above 11, the conducting polymer that wherein comprises the repetitive of formula (1) representative are to contain the conducting polymer of the construction unit of following formula (3) representative as repetitive:
R wherein
6And R
7Represent hydrogen atom independently of one another, straight chain or branching, saturated or undersaturated alkyl with 1-6 carbon atom, or a kind of substituting group: when alkyl mutually combines at an arbitrary position, this substituting group is used to form at least one 5-that contains two oxygen atoms, 6-or 7-person's saturated hydrocarbons ring structure, and this loop configuration comprises the structure that can substitutedly have the ethenylidene key and can substituted phenylene structure.
13. the chip-type solid electrolytic capacitor described in above 11, wherein conducting polymer is selected from polyaniline, polyphenylene oxide, polyphenylene sulfide, polythiophene, poly-furans, polypyrrole, poly-methyl pyrrole, and substitutive derivative.
14. the chip-type solid electrolytic capacitor described in above 13, wherein conducting polymer is poly-(3,4-ethylidene dioxy thiophene).
15. the chip-type solid electrolytic capacitor described in above 10, wherein inorganic semiconductor is at least a compound that is selected from molybdenum dioxide, tungsten dioxide, brown lead oxide and manganese dioxide.
16. the chip-type solid electrolytic capacitor described in above 10, wherein semi-conductive conductivity is 10
-2～10
3S/cm.
17. circuit that uses each described chip-type solid electrolytic capacitor among the above 1-16.
18. electronic instrument that uses each described chip-type solid electrolytic capacitor among the above 1-16.
Summary of drawings
Fig. 1 is the perspective view of an example of expression chip-type solid electrolytic capacitor of the present invention, wherein each is had all that three solid electrolytic capacitor element of positive wire (anode part) are parallel to be lain on the terminal part of lead frame every ground continuously.
Fig. 2 is the perspective view of another example of expression chip-type solid electrolytic capacitor of the present invention, wherein lie on the terminal part of lead frame every ground continuously three solid electrolytic capacitor element are parallel, each solid electrolytic capacitor element all has anode part in its sintered body.
Fig. 3 is the perspective view of the conventional example of expression chip-type solid electrolytic capacitor, wherein a solid electrolytic capacitor element is lain on the terminal part of lead frame.
Embodiments of the present invention
Set forth a kind of execution mode of chip-type solid electrolytic capacitor of the present invention with reference to accompanying drawing.
Fig. 1 is the perspective view of an example of chip-type solid electrolytic capacitor of the present invention.In this example, adopt three solid electrolytic capacitor element (2), each element passes through the insulation oxide rete, semiconductor layer and conductive layer are made to form cathode portion (3) on the surface of anode substrate (4) with this sequence stack, anode substrate comprises the metal of valve acting or conductive oxide and is connected with the anode part lead, this chip-type solid electrolytic capacitor has this structure: the part cathode portion is parallel continuously on ground lies in a terminal part (1a) in the terminal part of pair of opposing of lead frame (1), anode part lead (4a) is lain on another terminal part (1b), each part is electrically connected or mechanical connection, with resin molded integral body but the outside is partly stayed in the external cabling of lead frame (1), at predetermined part (not shown) cutting and the lead frame outside the bending resin mold.
Fig. 2 is the perspective view of an example of chip-type solid electrolytic capacitor of the present invention.In this example, adopt three solid electrolytic capacitor element (2), each element is by making insulation oxide rete, semiconductor layer and conductive layer simultaneously anode part (4) to remain on one of this solid electrolytic capacitor element to bring in manufacturing to form cathode portion (3) on the anode substrate surface with this sequence stack, and anode substrate comprises the metal or the conductive oxide of valve acting; This chip-type solid electrolytic capacitor has this structure: cathode portion (3) is parallel to be lain on the terminal part (1a) of terminal part of lead frame (1) pair of opposing every ground continuously, anode part lead (4a) is placed on another terminal part (1b), each part is electrically connected or mechanical connection, with resin molded integral body but with the external cabling of lead frame (1) partly stay the outside, and, similar to the example among Fig. 1, at predetermined part cutting and the lead frame outside the bending resin mold.
The mixture of two or more in metal, alloy and the conductive oxide that the metal of valve acting used in this invention or the example of conductive oxide comprise tantalum, aluminium, niobium, titanium, the alloy (50 quality % or more component) or the niobium oxide that mainly are made of the metal of this class valve acting and be selected from these valve actings.Can make metal, alloy or the conductive oxide of valve acting partly experience at least a processing that is selected from carbonization, phosphatization, boronation, nitrogenize and sulfuration before use.
Anode substrate used in this invention is a kind of sintered body that then its sintering is obtained by the powder forming with the metal of valve acting or conductive oxide.By suitably selecting forming pressure and sintering condition (temperature and time) can change the surface area of sintered body.In order behind sintering, to increase the surface area of sintered body biglyyer, can be with the surface chemistry and/or the electroetching of sintered body.
Among the present invention, the part of anode substrate (4) is as anode part.As shown in Figure 2, can be with the end of anode substrate as anode part, perhaps as shown in fig. 1, metal wire (4a) can be connected with the part of anode substrate and be used as anode part.Can after sintered body forms, connect metal wire, perhaps the part metals line can be imbedded in the formed body sintering then before shaping, connect thus.The example of metal wire comprises tantalum, niobium, aluminium, titanium, the main alloy that is made of this metalloid, and these metals and the alloy of partial oxidation and/or nitrogenize.
Metal wire is 1mm or thinner fine rule normally.Make capacitor short-circuit for the semiconductor layer that prevents to describe after a while is attached to the part of serving as anode part, insulating resin that can be by adhering to similar hair band (hair band) on the interface between it is with the remainder insulation of anode part and anode substrate.
Among the present invention, the example of the insulation oxide rete that forms on the anode substrate surface except that anode part (insulating barrier may reside in the whole or segment anode part) comprises and is selected from for example Ta
2O
5, Al
2O
3, Zr
2O
3And Nb
2O
5Metal oxide at least a.Insulating barrier can form anode substrate by electrochemistry in electrolytic solution and obtain.And, described in the open WO00/75943 of international monopoly that submits to as the applicant, can use this insulating barrier: this insulating barrier mixes with insulating barrier in being used in ceramic capacitor and obtains by will mainly comprising at least a insulating barrier that is selected from metal oxide.
The representative example of the semiconductor layer that forms on insulating barrier of the present invention comprises at least a compound that is selected from organic semiconductor and inorganic semiconductor.The organic semi-conductor object lesson comprises the tetramer that comprises the benzopyrrole quinoline and the organic semiconductor of chloranil, the organic semiconductor that mainly comprises the organic semiconductor of four sulphur aphthacenes, mainly comprises the organic semiconductor of four cyanide quinoline bismethanes and mainly comprise conducting polymer, and this conducting polymer obtains by dopant being doped in the polymer that comprises by the repetitive of following formula (1) or (2) representative:
R wherein
1-R
4Identical or different, represent hydrogen atom independently of one another, have the alkyl of 1-6 carbon atom or have the alkoxyl of 1-6 carbon atom; X represention oxygen atom, sulphur atom or nitrogen-atoms; R
5Only when X is nitrogen-atoms, just exist, and represent hydrogen atom or have the alkyl of 1-6 carbon atom; R
1With R
2And R
3With R
4In the every pair of looping structure that can mutually combine.
The preferred embodiment of conducting polymer that comprises the repetitive of formula (1) representative comprises the construction unit that contains following formula (3) the representative conducting polymer as repetitive:
R wherein
6And R
7Represent hydrogen atom independently of one another, straight chain or branching, saturated or undersaturated alkyl with 1-6 carbon atom, or a kind of substituting group: when alkyl mutually combines at an arbitrary position, this substituting group is used to form at least one 5-that contains two oxygen elements, 6-or 7-person's saturated hydrocarbons ring structure, and this loop configuration comprises the structure that can substitutedly have the ethenylidene key and can substituted phenylene structure.
The conducting polymer that contains this chemical constitution is charged by electricity and dopant is being mixed wherein.For dopant, can use known dopant and unrestricted.
The example of polymer that contains the repetitive of formula (1), (2) or (3) representative comprises polyaniline, polyphenylene oxide, polyphenylene sulfide, polythiophene, poly-furans, polypyrrole, poly-methyl pyrrole, and substitutive derivative and copolymer.In these polymer, preferably polypyrrole, polythiophene and substitutive derivative thereof (for example poly-(3,4-ethylidene dioxy thiophene)).
The object lesson of inorganic semiconductor comprises at least a compound that is selected from molybdenum dioxide, tungsten dioxide, brown lead oxide and manganese dioxide.
When used organic or inorganic semiconductor has 10
-2～10
3During the conductivity of S/cm, made capacitor can have little ESR value, and this is preferred.
Among the present invention, conductive layer is provided on the formed semiconductor layer with said method or similar approach.For example, can form conductive layer by the curing of curing, coating, metallization or heat-resisting electroconductive resin film of conduction lotion.The preferred embodiment of conduction lotion comprises silver paste, copper cream, aluminium cream, carbon paste and nickel cream, can be separately or use these lotions in conjunction with its two or more.In using the situation of two or more lotions, lotion can be mixed or will be stacked mutually as independent layer.Solidify by the conduction lotion that rests in the air or used during heating then.The example of coating comprises nickel plating, copper facing, silver-plated and aluminize.The example of the metal of gas deposition comprises aluminium, nickel, copper and silver.
More specifically, for example carbon paste and silver paste have been formed on the anode substrate of semiconductor layer thereon with this sequence stack.
Like this, just made a kind of solid electrolytic capacitor element, wherein the layer up to conductive layer all is stacked on the anode substrate to form cathode portion.
In the manufacturing of chip-type solid electrolytic capacitor of the present invention, prepare the solid electrolytic capacitor element of a plurality of manufacturings like this; Lie on the terminal part of lead frame of the terminal part of separately making every ground continuously the part cathode portion of each solid electrolytic capacitor element is parallel with pair of opposing; The anode part of anode substrate is lain on another terminal part; Each part is electrically connected or mechanical connection, and for example the former adopts the conduction lotion to solidify and the latter adopts spot welding; With resin molded integral body but the part that will constitute the lead frame external terminal is stayed the outside; Then at predetermined part (not shown) cutting and the lead frame outside the bending resin mold.Particularly, for example as shown in fig. 1, lie on the terminal part of pair of opposing of lead frame and molded every ground continuously three solid electrolytic capacitor element are parallel, to make a kind of polygonal and the chip-type solid electrolytic capacitor of parallelepiped normally.When making this solid electrolytic capacitor, the part that has recess can be placed the position that is configured for holding the lead frame after the cutting on part side and/or the bottom surface, the part that has recess for example can be placed on the end face to distinguish anode and negative electrode, perhaps can end face and/or bottom surface be reduced with at the chip-type solid electrolytic capacitor of being convenient to taking-up manufacturing from metal die when resin molded with certain angle.
Cutting lead frame and the finally external terminal of formation chip-type solid electrolytic capacitor as mentioned above.It is shaped as thin slice or plate-shaped, and its constituent material is iron, copper, aluminium or the main alloy that is made of this metalloid.Lead frame can be plated partially or completely with scolder, tin, titanium or analog.For example nickel of bottom coating can be provided between lead frame and coated metal.Lead frame so is provided with: make two limits of lead frame relative, leave the gap therebetween, this gap is isolated with the anode part and the cathode portion of each solid electrolytic capacitor element.
In chip-type solid electrolytic capacitor of the present invention, when the ratio with the volume of a sintered body except that anode part and the volume of chip capacitor is made as 0.042-0.110, preferred 0.050-0.100, more preferably during 0.070-0.092, can makes the good chip-type solid electrolytic capacitor of the low initiated failure rate with little ESR and LC value.If this volume ratio is less than 0.042, it is big that the initiated failure rate of LC value becomes, and if this volume ratio surpasses 0.110, obtain the ESR (100kHz) of difference.In the conventional solid electrolytic capacitor, know on the experience in pattern capacitor hour, the initiated failure rate is tended to lower.Yet this keeps flat in the chip-type solid electrolytic capacitor of the present invention of a plurality of solid electrolytic capacitor element antithesis every ground continuously parallel.The pressure that this accepts from moulded resin owing to capacitor element, this pressure is difference according to the situation of element placement.On the other hand, ESR is the function of distance between anode substrate center and the conductive layer center, and therefore, the size of capacitor element is proportional in it and the pattern.Thereby, when serving as when instructing the volume of adjusting capacitor element with above-mentioned volume ratio, can obtain all good capacitors of above characteristic.
As for the resin that is used in the molded chip-type solid electrolytic capacitor of the present invention, can use the known resin that is used in the molded chip-type solid electrolytic capacitor, for example epoxy resin, phenol resin and alkyd resins.Be used to implement the resin molded preferred conveyer of production machine.
Capacitor, particularly length and width and height that the present invention can be suitable for chip size commonly used are the chip size of 7.3 * 4.3 * 1.0mm, 7.3 * 4.3 * 1.8mm, 7.3 * 4.3 * 2.8mm, 7.3 * 4.3 * 3.8mm, 6.0 * 3.2 * 1.0mm, 6.0 * 3.2 * 1.8mm, 6.0 * 3.2 * 2.8mm and 6.0 * 3.2 * 3.8mm.
Can preferably chip-type solid electrolytic capacitor of the present invention be used to adopt the circuit of high capacity capacitor, as voltage stabilizing circuit and noise suicide circuit.These circuit can be used for various digital instruments, for example personal computer, server, camera, game machine, DVD, AV equipment and mobile phone, and the electrical equipment of various power supplys for example.The primary failure rate of the chip-type solid electrolytic capacitor of making among the present invention is low, thereby uses this chip-type solid electrolytic capacitor can obtain low electronic circuit of primary failure rate and electronic instrument.
Implement best mode of the present invention
Describe the present invention in more detail with reference to embodiment, yet the invention is not restricted to these embodiment.
In an embodiment, the chip-type solid electrolytic capacitor of manufacturing is welded under the following conditions: make capacitor pass reflow ovens three times, setting this reflow ovens takes at 260 ℃ of temperature curves with peak value (keeping 40 seconds at 150 ℃, after the intensification, 230 ℃ or higher maintenance 30 seconds).After being welded, under 4V, measure LC 30 seconds.Units in each the measurement is n=320, and those capacitors that will have 0.1CV or lower LC value are judged as and can accept.
Embodiment 1-3 and Comparative Examples 1-2:
With CV (product of capacitance and electrochemical voltage) is 50, and the tantalum powder of 000/g prepares the sintered body that is of a size of 4.0 * W * 1.8mm as shown in table 1, and (quality of tantalum and size (W mm) are shown in Table 1; Sintering temperature: 1,420 ℃, sintering time: 20 minutes, sintered density: 6.4g/cm
3, Ta lead-in wire: 0.24mm φ; Part Ta lead-in wire imbedded in the sintered body stretch into 4mm with parallel longitudinal, the lead portion that will be stretched out by sintering is as anode part).The sintered body that will serve as anode immerses in 0.1% phosphate aqueous solution except that lead portion, and is coming electrochemistry to form 3 hours by the voltage that applies 18V between anode and the Ta plate electrode as negative electrode under 80 ℃, to form by Ta
2O
5The insulation oxide rete that constitutes.Then, this sintered body is immersed except that lead-in wire in 20% lead acetate water solution and the solution of 35% ammonium persulfate aqueous solution with mixing in 1: 1, it was left standstill under 40 ℃ 1 hour, extract then, washing and dry this sintered body repeat this and operate 25 times to form the mixture (brown lead oxide: the semiconductor layer of Gou Chenging 96%) by brown lead oxide and lead sulfate on the insulation oxide rete.Sequence stack carbon paste and silver paste are made solid electrolytic capacitor element thus to be made into cathode portion on semiconductor layer.
On a pair of terminal part of the thick copper alloy lead frame with zinc-plated surface of the independent 100 μ m that make, (there are 32 pairs of paired terminal parts, each wide 3.4mm; The terminal part that keeps flat cathode portion on it has the ladder corresponding to the 0.9mm of the ladder among Fig. 1, and the part that the negative pole part branch is put has the length of 4.3mm; During the coplane projection, the gap that has 1mm between two terminal parts), three the parallel no compartment of terrain of solid electrolytic capacitor element levels as above making are connected (with the cathode side of solid electrolytic capacitor, 4.0 * W the face that is sintered body lies on the terminal part with ladder, and the anode-side of solid electrolytic capacitor is lain on another terminal part; Each all is electrically connected or is mechanically connected to last person and is connected to the back by spot welding by silver paste is solidified; In a lead frame, connect three solid electrolytic capacitor element on every pair of terminal part, connect 96 solid electrolytic capacitor element altogether).After this, the part of two terminal parts of lead frame and solid electrolytic capacitor element are all come molded with epoxy resin by transfer moudling, with manufacturing dimension is that the chip-type solid electrolytic capacitor of 7.3 * 4.3 * 2.8mm is (behind the molding, with in outer two terminal parts of pattern each all in the cutting of the position of distance pattern end face 3.4mm, the lead frame of excision is removed, will be connected with chip-type solid electrolytic capacitor and each terminal part of lead frame that will stay the outside all along the bending of the periphery of capacitor and be used as external terminal; 32 chip-type solid electrolytic capacitors have been made from a lead frame).
Embodiment 4-6 and Comparative Examples 3
With with embodiment 1 in identical mode make chip-type solid electrolytic capacitor, except following change: the CV value is 80, and 000/g, sintered body are of a size of 4.0 * W * 1.0mm, and sintering temperature is 1,340 ℃, and sintering time is 30 minutes, and the density of sintered body is 5.6g/cm
3Semiconductor layer be polypyrrole (form by repeating following operation 55 times: alternately immerse sintered body in 5% pyrroles's alcoholic solution and the mixed aqueous solution of 0.1% anthraquinone sulfonic acid and 10% ammonium persulfate in and react at 40 ℃), the ladder of lead frame is 0.5mm, and sheet shape is that the cutting position behind 7.3 * 4.3 * 1.8mm and the molding is 2.9mm.
Embodiment 7-9 and Comparative Examples 4:
With with embodiment 1 in identical mode make chip-type solid electrolytic capacitor, except following change: sintered body is of a size of 4.0 * W * 2.5mm, semiconductor layer (immerses sintered body in the aqueous solution of ethylidene dioxy thiophene and anthraquinone sulfonic acid for poly-ethylidene dioxy thiophene, every kind all dissolves with minute quantity, carried out electrolysis polymerization 170 hours), the ladder of lead frame is 1.3mm, and sheet shape is that the cutting position behind 7.3 * 4.3 * 3.5mm and the molding is 3.8mm.
More than in the capacitor of the ratio of the size W of each chip-type solid electrolytic capacitor of Zhi Zaoing, the volume of a kind of sintered body except that anode part and the volume of chip capacitor, capacitance, unit mass capacitance, the ESR (100kHz) of used integral sintered body and be contained on the substrate after the zero defect rate of LC (judge that 0.1CV or lower LC are for accepting; The voltage of this moment is 4V) be shown in Table 1.Each is the mean value of n=320 unit for capacitance and ESR.
Table 1
From between embodiment 1-3 and Comparative Examples 1 and 2, between embodiment 4-6 and the Comparative Examples 3 and between embodiment 7-9 and the Comparative Examples 4 more as can be seen: when the ratio of the volume of a sintered body except that anode part and the volume of sheet is 0.042-0.110, can makes and compare chip-type solid electrolytic capacitor with capacitor identical except that this volume ratio with low ESR and less failure rate.
Industrial applicibility
The invention provides a kind of chip-type solid electrolytic capacitor, wherein the volume of a sintered body except anode part is 0.042-0.110 with the ratio of the volume of sheet. According to the present invention, can obtain a kind of chip-type solid electrolytic capacitor with low ESR and little primary failure rate.
Claims (18)
1. chip-type solid electrolytic capacitor, comprise a plurality of solid electrolytic capacitor element, each element passes through the insulation oxide rete, semiconductor layer and conductive layer make to form cathode portion on the anode substrate surface except that the anode part of one end with this sequence stack, anode substrate comprises the metal of valve acting or the sintered body of conductive oxide, perhaps comprise the metal of valve acting or conductive oxide, the sintered body that is connected with plain conductor, this capacitor is a kind of like this chip-type solid electrolytic capacitor: on the terminal part of its pair of opposing by the parallel no compartment of terrain of a plurality of electrolytic capacitor component level being placed on lead frame, thereby anode part can contact with lead frame with cathode portion, connect each element, and with resin molded it is whole but the outside is partly stayed in the external cabling of lead frame and obtained, wherein the volume of a sintered body except that anode part and sheet volume ratio be 0.042-0.110.
2. the chip-type solid electrolytic capacitor described in claim 1, wherein anode part comprises the end of anode substrate.
3. the chip-type solid electrolytic capacitor described in claim 1, wherein anode part comprises the plain conductor that is connected with sintered body.
4. the chip-type solid electrolytic capacitor described in claim 3, wherein plain conductor is selected from tantalum, niobium, aluminium, titanium, mainly comprises the alloy of the metal that is selected from the group that tantalum, niobium, aluminium, titanium form and these metals and the alloy of partial oxidation and/or nitrogenize.
5. the chip-type solid electrolytic capacitor described in claim 1, wherein the metal of valve acting or conductive oxide be tantalum, aluminium, niobium, titanium, mainly comprise this class valve acting metal alloy or niobium oxide or be selected from metal, alloy and the conductive oxide of these valve actings two or more mixture.
6. the chip-type solid electrolytic capacitor described in claim 4 wherein makes metal, alloy or at least a processing that is selected from carbonization, phosphatization, boronation, nitrogenize and sulfuration of conductive oxide experience of valve acting.
7. the chip-type solid electrolytic capacitor described in claim 1, wherein sintered body has the surface of chemistry and/or electroetching.
8. the chip-type solid electrolytic capacitor described in claim 1 wherein insulate the interface between anode part and the part except that anode part with insulating resin.
9. the chip-type solid electrolytic capacitor described in claim 1, wherein the insulation oxide rete mainly comprises and is selected from Ta
2O
5, Al
2O
3, Zr
2O
3And Nb
2O
5At least a.
10. the chip-type solid electrolytic capacitor described in claim 1, wherein semiconductor layer is be selected from organic semiconductor layer and inorganic semiconductor layer at least a.
11. the chip-type solid electrolytic capacitor described in claim 10, wherein organic semiconductor be selected from following at least a: comprise the tetramer of benzopyrrole quinoline and the organic semiconductor of chloranil, the organic semiconductor that mainly comprises the organic semiconductor of four sulphur aphthacenes, mainly comprises the organic semiconductor of four cyanide quinoline bismethanes and mainly comprise conducting polymer, this conducting polymer obtains by dopant being doped in the polymer that comprises by the repetitive of following formula (1) or (2) representative:
R wherein
1-R
4Identical or different, represent hydrogen atom independently of one another, have the alkyl of 1-6 carbon atom or have the alkoxyl of 1-6 carbon atom; X represention oxygen atom, sulphur atom or nitrogen-atoms; R
5Only when X is nitrogen-atoms, just exist, and represent hydrogen atom or have the alkyl of 1-6 carbon atom; R
1With R
2And R
3With R
4In the every pair of looping structure that can mutually combine.
12. the chip-type solid electrolytic capacitor described in claim 11, the conducting polymer that wherein comprises the repetitive of formula (1) representative are to contain the conducting polymer of the construction unit of following formula (3) representative as repetitive:
R wherein
6And R
7Represent hydrogen atom independently of one another, straight chain or branching, saturated or undersaturated alkyl with 1-6 carbon atom, or a kind of substituting group: when alkyl mutually combines at an arbitrary position, this substituting group is used to form at least one 5-that contains two oxygen elements, 6-or 7-person's saturated hydrocarbons ring structure, and this loop configuration comprises the structure that can substitutedly have the ethenylidene key and can substituted phenylene structure.
13. the chip-type solid electrolytic capacitor described in claim 11, wherein conducting polymer is selected from polyaniline, polyphenylene oxide, polyphenylene sulfide, polythiophene, poly-furans, polypyrrole, poly-methyl pyrrole, and substitutive derivative.
14. the chip-type solid electrolytic capacitor described in claim 13, wherein conducting polymer is poly-(3,4-ethylidene dioxy thiophene).
15. the chip-type solid electrolytic capacitor described in claim 10, wherein inorganic semiconductor is at least a compound that is selected from molybdenum dioxide, tungsten dioxide, brown lead oxide and manganese dioxide.
16. the chip-type solid electrolytic capacitor described in claim 10, wherein semi-conductive conductivity is 10
-2～10
3S/cm.
17. circuit that uses each described chip-type solid electrolytic capacitor among the claim 1-16.
18. electronic instrument that uses each described chip-type solid electrolytic capacitor among the claim 1-16.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003056237 | 2003-03-03 | ||
| JP56237/2003 | 2003-03-03 | ||
| PCT/JP2004/002573 WO2004079760A1 (en) | 2003-03-03 | 2004-03-02 | Chip solid electrolyte capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1757083A CN1757083A (en) | 2006-04-05 |
| CN1757083B true CN1757083B (en) | 2010-06-09 |
Family
ID=36689409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2004800058350A Expired - Lifetime CN1757083B (en) | 2003-03-03 | 2004-03-02 | Chip solid electrolyte capacitor |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101052215B1 (en) |
| CN (1) | CN1757083B (en) |
| TW (1) | TW200511347A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100778549B1 (en) * | 2006-10-02 | 2007-11-22 | 주식회사 디지털텍 | Carbonization method of polymer condenser |
| CN101174508B (en) * | 2006-10-31 | 2011-11-23 | Nec东金株式会社 | Lead frame, upside-down mounted terminal solid electrolyte capacitor and its manufacturing method using lead frame |
| JP5330191B2 (en) * | 2009-10-27 | 2013-10-30 | サン電子工業株式会社 | Solid electrolytic capacitor and manufacturing method thereof |
| CN104599848A (en) * | 2013-10-30 | 2015-05-06 | 张彩欣 | Hybrid capacitor and manufacturing method thereof |
| CN104599849A (en) * | 2013-10-30 | 2015-05-06 | 张彩欣 | Hybrid capacitor and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1202301A1 (en) * | 1999-06-09 | 2002-05-02 | Showa Denko Kabushiki Kaisha | Electrode material for capacitor and capacitor using the same |
-
2004
- 2004-03-02 CN CN2004800058350A patent/CN1757083B/en not_active Expired - Lifetime
- 2004-03-02 KR KR1020057016249A patent/KR101052215B1/en active IP Right Grant
- 2004-03-02 TW TW093105398A patent/TW200511347A/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1202301A1 (en) * | 1999-06-09 | 2002-05-02 | Showa Denko Kabushiki Kaisha | Electrode material for capacitor and capacitor using the same |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平5-234829A 1993.09.10 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1757083A (en) | 2006-04-05 |
| KR20050113628A (en) | 2005-12-02 |
| TWI327329B (en) | 2010-07-11 |
| TW200511347A (en) | 2005-03-16 |
| KR101052215B1 (en) | 2011-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20090027834A1 (en) | Solid electrolyte capacitor | |
| CN1892938B (en) | Stacked solid electrolytic capacitor | |
| US7265965B2 (en) | Capacitor element and carbon paste | |
| US7837185B2 (en) | Jig for producing capacitors, apparatus for producing capacitors and method for producing capacitors | |
| US11335516B2 (en) | High-capacity micro-supercapacitor, method of manufacturing high-capacity micro-supercapacitor, and method of forming current collector for micro-supercapacitor | |
| EP1768140B1 (en) | Solid electrolytic capacitor element and carbon paste for producing it | |
| CN101015029A (en) | Solid electrolytic capacitor element, solid electrolytic capacitor and production method thereof | |
| KR101098797B1 (en) | Jig for producing capacitor production method for capacitor and capacitor | |
| CN1757083B (en) | Chip solid electrolyte capacitor | |
| US7218505B2 (en) | Chip solid electrolyte capacitor | |
| US7609505B2 (en) | Chip solid electrolyte capacitor and production method of the same | |
| CN100578701C (en) | Production method of capacitor | |
| US9224538B2 (en) | Solid electrolytic capacitor element, method for producing same, and tool for producing said solid electrolytic capacitor element | |
| CN100468586C (en) | Tantalum sintered body | |
| US7355842B2 (en) | Chip solid electrolyte capacitor and production method of the same | |
| CN1860566B (en) | Production method of a capacitor | |
| JP2004289139A (en) | Chip type solid electrolytic capacitor | |
| JPH11274003A (en) | Chip-type laminated solid electrolytic capacitor | |
| CN1823397B (en) | Method for producing solid electrolytic capacitor | |
| KR0148613B1 (en) | Solid electrolytic capacitor & manufacturing method thereof | |
| JPH05304056A (en) | Manufacture of solid electrolytic capacitor | |
| CN1839453A (en) | Chip solid electrolyte capacitor and production method of the same | |
| CN104701021A (en) | Solid electrolytic capacitor | |
| JPH02305428A (en) | Solid electrolytic capacitor and manufacture thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100609 |