CN1752764A - Deep-level transient spectrum measurement device and measurement method with external magnetic field - Google Patents
Deep-level transient spectrum measurement device and measurement method with external magnetic field Download PDFInfo
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- 238000005259 measurement Methods 0.000 title claims abstract description 37
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- 230000001052 transient effect Effects 0.000 title abstract description 46
- 238000001228 spectrum Methods 0.000 title abstract description 32
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- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 230000001681 protective effect Effects 0.000 claims abstract description 27
- 239000012535 impurity Substances 0.000 claims abstract description 19
- 230000003993 interaction Effects 0.000 claims abstract description 13
- 230000008859 change Effects 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
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- -1 polytetrafluoroethylene Polymers 0.000 description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 5
- 239000004810 polytetrafluoroethylene Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000013074 reference sample Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 1
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Abstract
一种具有外加磁场的深能级瞬态谱测量装置，用于观察稀磁半导体材料中由于磁性离子引进的杂质和缺陷深能级与外加磁场相互作用信息，其特征在于，包括：一永久磁铁，该永久磁铁为圆柱形；一底板，该底板置于永久磁铁的下方；两块防护板，该防护板为矩形，该两防护板置于永久磁铁和底板的两侧；一台面，该台面为矩形，该台面置于永久磁铁的上面；使两块防护板的高度与永久磁铁加上底板的高度相同；台面正好覆盖住永久磁铁和两块防护板。
A deep level transient spectrum measurement device with an external magnetic field, used to observe the interaction information between the deep level and the external magnetic field of impurities and defects introduced by magnetic ions in dilute magnetic semiconductor materials, characterized in that it includes: a permanent magnet , the permanent magnet is cylindrical; a bottom plate, the bottom plate is placed under the permanent magnet; two protective plates, the protective plate is rectangular, and the two protective plates are placed on both sides of the permanent magnet and the bottom plate; a table, the table It is rectangular, and the table top is placed on the permanent magnet; the height of the two protective plates is the same as that of the permanent magnet plus the bottom plate; the table top just covers the permanent magnet and the two protective plates.
Description
技术领域technical field
本发明专利涉及半导体(非磁性和磁性)材料及其相关器件的电学特性(材料的杂质和缺陷深能级瞬态谱，样品电容-电压和电流-电压特性曲线)测量装置与测量方法，特别是涉及到用于稀磁半导体深能级瞬态谱测量的外加磁场装置和测量方法以及稀磁半导体材料中由于磁性离子掺杂产生相关的杂质与缺陷深能级与外加磁场的相互作用信息。The patent of the present invention relates to the measurement device and measurement method of the electrical characteristics of semiconductor (non-magnetic and magnetic) materials and related devices (deep energy level transient spectrum of impurities and defects of materials, sample capacitance-voltage and current-voltage characteristic curves), especially It relates to the external magnetic field device and measurement method for the measurement of the transient spectrum of the deep energy level of the diluted magnetic semiconductor, and the interaction information between the deep energy level and the external magnetic field of the impurity and defect related to the magnetic ion doping in the diluted magnetic semiconductor material.
背景技术Background technique
1974年美国Bell实验室D.V.Lang发明了用于测量非磁性半导体材料的杂质和缺陷深能级瞬态谱技术，打开了半导体材料电学特性测量新领域。为研究和应用新型半导体材料和相关电子器件打下了坚实的基础。随着半导体产品的迅猛发展，新型磁性半导体材料出现，但传统的深能级瞬态谱测量装置(无外加磁场)已无法满足材料电学特性测量需要，尤其是磁性半导体材料运用领域——自旋电子器件。因为在无外加磁场条件下获得的磁性半导体材料中的深能级信息已不能全面反映其电学特性和行为。随着自旋电子器件的应用，迫切需要了解在外加磁场下材料中杂质与缺陷的电学行为和它们之间的相互作用信息。但到目前为止，我们查询了国内外相关文献资料，均无具有外加磁场的深能级瞬态谱测量装置和测量方法的报导。我们申请该发明专利，正是满足稀磁半导体材料及其相关自旋电子器件产业发展的需要。In 1974, D.V.Lang of Bell Laboratories in the United States invented the deep-level transient spectrum technology for measuring impurities and defects in non-magnetic semiconductor materials, which opened up a new field of measurement of electrical characteristics of semiconductor materials. It has laid a solid foundation for the research and application of new semiconductor materials and related electronic devices. With the rapid development of semiconductor products, new magnetic semiconductor materials have emerged, but the traditional deep-level transient spectrum measurement device (without external magnetic field) can no longer meet the needs of the measurement of electrical properties of materials, especially in the application field of magnetic semiconductor materials - spin electronic devices. Because the deep energy level information in the magnetic semiconductor material obtained under the condition of no external magnetic field can no longer fully reflect its electrical characteristics and behavior. With the application of spintronic devices, it is urgent to understand the electrical behavior of impurities and defects in materials and the interaction information between them under external magnetic field. But so far, we have searched relevant literature at home and abroad, and there is no report on the deep-level transient spectrum measurement device and measurement method with an external magnetic field. Our application for this invention patent is just to meet the needs of the industry development of dilute magnetic semiconductor materials and related spintronic devices.
发明内容Contents of the invention
本发明的目的在于，提供一种具有外加磁场的深能级瞬态谱测量装置与测量方法，可用于解决目前传统的半导体材料中杂质和缺陷深能级瞬态谱测量无法提供的稀磁半导体材料中磁性离子引进的深能级与外加磁场相互作用的信息，提供半导体(非磁和磁性)材料杂质与缺陷在无磁场和外加磁场条件下深能级瞬态谱测量装置和测量方法。运用该测量装置和测量方法可在较宽的外加磁场强度(300-3000高斯)范围里提供稀磁半导体材料及相关自旋电子器件中杂质与缺陷深能级与外加磁场相互作用信息。本发明具有外加磁场的深能级瞬态谱测量装置和测量方法是在传统的深能级瞬态谱测量基础上发展起来的。The purpose of the present invention is to provide a deep-level transient spectrum measurement device and measurement method with an external magnetic field, which can be used to solve the problems of dilute magnetic semiconductors that cannot be provided by the current deep-level transient spectrum measurement of impurities and defects in traditional semiconductor materials. The information on the interaction between the deep energy level introduced by magnetic ions in the material and the external magnetic field provides a device and method for measuring the deep energy level transient spectrum of semiconductor (non-magnetic and magnetic) material impurities and defects under the condition of no magnetic field and external magnetic field. Using the measurement device and measurement method can provide information on the interaction between deep energy levels of impurities and defects in dilute magnetic semiconductor materials and related spintronic devices and external magnetic fields within a wide range of external magnetic field strength (300-3000 gauss). The deep energy level transient spectrum measurement device and measurement method with external magnetic field of the present invention are developed on the basis of traditional deep energy level transient spectrum measurement.
本发明的其技术方案包括：Its technical scheme of the present invention comprises:
本发明一种具有外加磁场的深能级瞬态谱测量装置，用于观察稀磁半导体材料中由于磁性离子引进的杂质和缺陷深能级与外加磁场相互作用信息，其特征在于，包括：The present invention is a deep level transient spectrum measurement device with an external magnetic field, which is used to observe the interaction information between the deep level and the external magnetic field of impurities and defects introduced by magnetic ions in dilute magnetic semiconductor materials. It is characterized in that it includes:
一永久磁铁，该永久磁铁为圆柱形；A permanent magnet, the permanent magnet is cylindrical;
一底板，该底板置于永久磁铁的下方；a bottom plate, the bottom plate is placed under the permanent magnet;
两块防护板，该防护板为矩形，该两防护板置于永久磁铁和底板的两侧；Two protective plates, the protective plates are rectangular, and the two protective plates are placed on both sides of the permanent magnet and the bottom plate;
一台面，该台面为矩形，该台面置于永久磁铁的上面；a table top, the table top is rectangular, and the table top is placed on the permanent magnet;
使两块防护板的高度与永久磁铁加上底板的高度相同；台面正好复盖住永久磁铁和两块防护板。Make the height of the two protective plates the same as that of the permanent magnet plus the base plate; the table top just covers the permanent magnet and the two protective plates.
其中该防护板的材料为聚四氟乙烯。Wherein the material of the protective plate is polytetrafluoroethylene.
其中该底板的材料为无氧紫铜。Wherein the material of the bottom plate is oxygen-free red copper.
其中该永久磁铁为稀土材料制成，直径为30mm，磁铁强度范围在300-3000高斯，其厚度范围在3.5-6.5mm之间。Wherein the permanent magnet is made of rare earth material, has a diameter of 30 mm, a magnet strength range of 300-3000 gauss, and a thickness range of 3.5-6.5 mm.
其中该台面的材料为聚四氟乙烯。Wherein the material of the table is polytetrafluoroethylene.
本发明一种具有外加磁场的深能级瞬态谱测量方法，用于观察稀磁半导体材料中由于磁性离子引进的杂质和缺陷深能级与外加磁场相互作用信息，其特征在于，包括如下步骤：The present invention is a deep energy level transient spectrum measurement method with an external magnetic field, which is used to observe the interaction information between the deep energy level and the external magnetic field of impurities and defects introduced by magnetic ions in dilute magnetic semiconductor materials. It is characterized in that it includes the following steps :
步骤1：将放置有样品的样品台置于前述的具有外加磁场的深能级瞬态谱测量装置的台面上；Step 1: Place the sample stage with the sample on the stage of the aforementioned deep-level transient spectrum measurement device with an external magnetic field;
步骤2：将放置有样品的样品台和具有外加磁场的深能级瞬态谱测量装置置于真空容器的样品室中，盖好样品室的外罩，抽真空；Step 2: Place the sample stage with the sample and the deep-level transient spectrum measurement device with an external magnetic field in the sample chamber of the vacuum container, cover the outer cover of the sample chamber, and evacuate;
步骤3：有序地改变外加永久磁铁的磁场强度，由于磁场强度的变化，永久磁铁厚度随之改变，与此同时，改变底板厚度，使放在永久磁铁上的台面与放置测量样品的样品台之间的空隙小，以保证通过待测样品中心的磁场强度均匀；Step 3: Change the magnetic field strength of the external permanent magnet in an orderly manner. Due to the change of the magnetic field strength, the thickness of the permanent magnet will change accordingly. The gap between them is small to ensure that the magnetic field intensity passing through the center of the sample to be tested is uniform;
步骤4：随着待测样品温度的升高，从深能级瞬态谱输出可获得在不同外加磁场下样品里的杂质和缺陷深中心信号随外加磁场的增大而发生有序红移的信息。Step 4: With the increase of the temperature of the sample to be tested, from the output of the deep level transient spectrum, the order redshift of the deep center signals of impurities and defects in the sample under different applied magnetic fields can be obtained with the increase of the applied magnetic field information.
其中将待测样品的温度降低到液氮温度77K，在待测样品上施加一反向偏压VR，并在VR上迭加连续的正向脉冲VP，其脉宽为100μs。The temperature of the sample to be tested is lowered to the liquid nitrogen temperature of 77K, a reverse bias voltage VR is applied to the sample to be tested, and a continuous positive pulse V P is superimposed on VR with a pulse width of 100 μs.
其中抽真空到10-1托。The vacuum was evacuated to 10 -1 Torr.
其中有序地改变外加永久磁铁的磁场强度，该磁场强度为300-3000高斯。Wherein the magnetic field strength of the external permanent magnet is changed in an orderly manner, and the magnetic field strength is 300-3000 Gauss.
其中放在永久磁铁上的台面与放置测量样品的样品台之间的空隙小于0.2-0.3mm。Wherein the gap between the table top placed on the permanent magnet and the sample stage on which the measurement sample is placed is less than 0.2-0.3mm.
附图说明Description of drawings
为进一步说明本发明专利的技术内容，以下结合实施例及附图详细说明于后，其中：In order to further illustrate the technical content of the patent of the present invention, the following will be described in detail in conjunction with the embodiments and accompanying drawings, wherein:
图1为本发明剖面图及俯视图。Fig. 1 is a sectional view and a plan view of the present invention.
图2为掺铝和铁的n型ZnS稀磁半导体样品(曲线2，3和4)和掺铝n型ZnS参考样品(曲线1)在传统的深能级瞬态谱仪测量(无外加磁场)下获得的深能级瞬态谱。Figure 2 is the measurement of aluminum and iron-doped n-type ZnS dilute magnetic semiconductor samples (
图3分别为掺铝n型(1-3×1018cm-3)ZnS参考样品在传统的深能级瞬态谱仪(无外加磁场)(曲线1)和本发明专利具有外加磁场深能级瞬态谱仪测量(曲线1a)下获得的深能级瞬态谱。Figure 3 shows the Al-doped n-type (1-3×10 18 cm -3 ) ZnS reference sample in the traditional deep-level transient spectrometer (without external magnetic field) (curve 1) and the patent of the present invention with external magnetic field. The deep level transient spectrum obtained under the level transient spectrometer measurement (curve 1a).
图4分别为掺铝n型(1-3×1018cm-3)和n型掺铝、铁(1×1018cm-3)ZnS稀磁半导体样品在传统的深能级瞬态谱仪(无外加磁场)(曲线1，3a和3f)和本发明专利具有外加磁场深能级瞬态谱仪在不同外加磁场强度下(300-3000高斯)(曲线3b-3e)下获得的深能级瞬态谱。Figure 4 shows the samples of aluminum-doped n-type (1-3×10 18 cm -3 ) and n-type aluminum and iron-doped (1×10 18 cm -3 ) ZnS dilute magnetic semiconductor samples in the traditional deep-level transient spectrometer (no external magnetic field) (
图5分别为掺铝n型(1-3×1018cm-3)和n型掺铝、铁(1×1019cm-3)ZnS稀磁半导体样品在传统的深能级瞬态谱仪(无外加磁场)(曲线1，4a和4f)和本发明专利具有外加磁场深能级瞬态谱仪在不同外加磁场强度下(300-3000高斯)(曲线4b-4e)下获得的深能级瞬态谱。Figure 5 shows the samples of aluminum-doped n-type (1-3×10 18 cm -3 ) and n-type aluminum and iron-doped (1×10 19 cm -3 ) ZnS dilute magnetic semiconductor samples in the traditional deep-level transient spectrometer (no external magnetic field) (
图6为与铁有关的深施主态能量移动与磁场强度的关系。Figure 6 shows the relationship between the iron-related deep donor state energy transfer and the magnetic field strength.
具体实施方式Detailed ways
请参阅图1所示，本发明一种具有外加磁场的深能级瞬态谱测量装置，用于观察稀磁半导体材料中由于磁性离子引进的杂质和缺陷深能级与外加磁场相互作用信息，包括：Please refer to Fig. 1, a deep energy level transient spectrum measurement device with an external magnetic field of the present invention is used to observe the interaction information between the deep energy level and the external magnetic field of impurities and defects introduced by magnetic ions in dilute magnetic semiconductor materials, include:
一永久磁铁C，该永久磁铁C为圆柱形；该永久磁铁C为稀土材料制成，直径为30mm，磁铁强度范围在300-3000高斯，其厚度范围在3.5-6.5mm之间；A permanent magnet C, the permanent magnet C is cylindrical; the permanent magnet C is made of rare earth material, with a diameter of 30 mm, a magnet strength range of 300-3000 gauss, and a thickness range of 3.5-6.5 mm;
一底板B，该底板B置于永久磁铁C的下方；该底板B的材料为无氧紫铜；A bottom plate B, the bottom plate B is placed under the permanent magnet C; the material of the bottom plate B is oxygen-free red copper;
两块防护板A，该防护板A为矩形，该两防护板A置于永久磁铁C和底板B的两侧；该防护板A的材料为聚四氟乙烯；Two protective plates A, the protective plates A are rectangular, and the two protective plates A are placed on both sides of the permanent magnet C and the bottom plate B; the material of the protective plates A is polytetrafluoroethylene;
一台面D，该台面D为矩形，该台面D置于永久磁铁C的上面；该台面D的材料为聚四氟乙烯；A table D, the table D is rectangular, the table D is placed on top of the permanent magnet C; the material of the table D is polytetrafluoroethylene;
使两块防护板A的高度与永久磁铁C加上底板B的高度相同；台面D正好复盖住永久磁铁C和两块防护板A。Make the height of the two protective plates A equal to the height of the permanent magnet C plus the base plate B; the table top D just covers the permanent magnet C and the two protective plates A.
本发明一种具有外加磁场的深能级瞬态谱测量方法(请结合参阅图1)，用于观察稀磁半导体材料中由于磁性离子引进的杂质和缺陷深能级与外加磁场相互作用信息，包括如下步骤：The present invention has a deep-level transient spectrum measurement method with an externally applied magnetic field (please refer to Fig. 1), which is used to observe the interaction information between the deep-level and the externally applied magnetic field due to impurities and defects introduced by magnetic ions in dilute magnetic semiconductor materials, Including the following steps:
步骤1：将放置有样品的样品台置于前述的具有外加磁场的深能级瞬态谱测量装置的台面D上；Step 1: Place the sample stage with the sample on the stage D of the aforementioned deep-level transient spectrum measurement device with an external magnetic field;
步骤2：将放置有样品的样品台和具有外加磁场的深能级瞬态谱测量装置置于真空容器的样品室中，盖好样品室的外罩，抽真空到10-1托；Step 2: Place the sample stage with the sample and the deep-level transient spectrum measurement device with an external magnetic field in the sample chamber of the vacuum container, cover the outer cover of the sample chamber, and evacuate to 10 -1 Torr;
步骤3：有序地改变外加永久磁铁C的磁场强度，该磁场强度为300-3000高斯，由于磁场强度的变化，永久磁铁C厚度随之改变，与此同时，改变底板B厚度，使放在永久磁铁C上的台面D与放置测量样品的样品台之间的空隙小于0.2-0.3mm，以保证通过待测样品中心的磁场强度均匀；Step 3: Change the magnetic field strength of the permanent magnet C in an orderly manner. The magnetic field strength is 300-3000 Gauss. Due to the change of the magnetic field strength, the thickness of the permanent magnet C changes accordingly. At the same time, change the thickness of the bottom plate B so that the The gap between the table D on the permanent magnet C and the sample stage on which the measurement sample is placed is less than 0.2-0.3mm to ensure that the magnetic field strength passing through the center of the sample to be tested is uniform;
步骤4：随着待测样品温度的升高，从深能级瞬态谱输出可获得在不同外加磁场下样品里的杂质和缺陷深中心信号随外加磁场的增大而发生有序红移的信息。Step 4: With the increase of the temperature of the sample to be tested, from the output of the deep level transient spectrum, the order redshift of the deep center signals of impurities and defects in the sample under different applied magnetic fields can be obtained with the increase of the applied magnetic field information.
其中将待测样品的温度降低到液氮温度77K，在待测样品上施加一反向偏压VR，并在VR上迭加连续的正向脉冲Vp，其脉宽为100μs。The temperature of the sample to be tested is lowered to the liquid nitrogen temperature of 77K, a reverse bias voltage V R is applied to the sample to be tested, and a continuous positive pulse V p is superimposed on VR with a pulse width of 100 μs.
其中的防护板A(该防护板长为34mm，宽为35mm，高为13mm)。防护板A作用有二，其一有效地防止样品在测量过程中，由于测量温度升高，热传导和辐射到永久磁铁C，导致永久磁铁C的磁场强度明显降低。其二用于固定永久磁铁C位置，保证永久磁铁C圆心和放置待测样品的样品台中心处于同一垂直线上，提供较均匀的磁场强度穿过待测稀磁半导体材料样品。底板B为无氧紫铜块，长为32mm，宽为30mm，其厚度取决于不同磁场强度的永久磁铁C厚度。底板B的作用有二，其一有效地将传导到永久磁铁C的热量传走，使永久磁铁C温度保持在40℃以下。其二调节永久磁铁C与放置样品的样品台之间的空隙，使其空隙距离尽可能小。在永久磁铁C和样品台之间为防热传导和辐射，放入由聚四氟乙烯加工制成的厚为1mm的台面D。该外加磁场样品架装置使永久磁铁C圆心与样品台中心保持在同一垂直线上且与样品台之间的空隙尽可能小(0.2-0.3mm)。为选择不同的磁场强度，专门制备了一套不同磁场强度的永久磁铁C，其磁场强度范围为300-3000高斯。Wherein the protective plate A (the length of the protective plate is 34mm, the width is 35mm, and the height is 13mm). The protective plate A has two functions, one is to effectively prevent the magnetic field strength of the permanent magnet C from being significantly reduced due to heat conduction and radiation to the permanent magnet C due to the increase in the measurement temperature of the sample during the measurement process. The second is used to fix the position of the permanent magnet C, to ensure that the center of the permanent magnet C and the center of the sample stage where the sample to be tested are placed are on the same vertical line, and a relatively uniform magnetic field strength is provided to pass through the sample of the dilute magnetic semiconductor material to be tested. Bottom plate B is an oxygen-free copper block with a length of 32mm and a width of 30mm, and its thickness depends on the thickness of permanent magnet C with different magnetic field strengths. The bottom plate B has two functions, one is to effectively transfer away the heat conducted to the permanent magnet C, so that the temperature of the permanent magnet C is kept below 40°C. The second is to adjust the gap between the permanent magnet C and the sample stage on which the sample is placed, so that the gap distance is as small as possible. In order to prevent heat conduction and radiation between the permanent magnet C and the sample stage, a 1mm-thick table D made of polytetrafluoroethylene is placed. The applied magnetic field sample holder device keeps the center of the permanent magnet C and the center of the sample stage on the same vertical line and the gap between the permanent magnet C and the sample stage is as small as possible (0.2-0.3mm). In order to select different magnetic field strengths, a set of permanent magnets C with different magnetic field strengths is specially prepared, and the magnetic field strength ranges from 300-3000 Gauss.
将待测的稀磁半导体样品，防护板A，底板B，永久磁铁C和台面D按图1所示的位置装配好，盖好样品室的外罩，抽真空到10-1托。有序地改变外加磁铁的磁场强度(从300到3000高斯)，降低待测样品的温度到液氮温度(77K)。在样品上施加一反向偏压(VR)，并在VR上迭加连续的正向脉冲VP(其脉宽为100μs)。随着样品测量温度的升高，从深能级瞬态谱输出里可以获得在不同的外加磁场下样品里的杂质和缺陷深中心信号与外加磁场相互作用信息。Assemble the diluted magnetic semiconductor sample to be tested, the protective plate A, the bottom plate B, the permanent magnet C and the table D according to the positions shown in Figure 1, cover the outer cover of the sample chamber, and evacuate to 10 -1 Torr. Orderly change the magnetic field strength of the external magnet (from 300 to 3000 Gauss), and reduce the temperature of the sample to be tested to the liquid nitrogen temperature (77K). Apply a reverse bias voltage (V R ) to the sample, and superimpose continuous forward pulse V P ( its pulse width is 100μs) on VR. As the measurement temperature of the sample increases, the interaction information between the deep center signal of impurities and defects in the sample and the external magnetic field can be obtained from the output of the deep level transient spectrum under different external magnetic fields.
非稀磁和稀磁半导体材料样品深能级测量过程中使用该测量装置和测量方法，有序改变外加磁铁的磁场强度(300-3000高斯)可获得相关半导体材料中杂质和缺陷深中心与外加磁场相互作用信息。对于非稀磁半导体材料，其深能级的能级位置不随外加磁场强度改变而改变。对于稀磁半导体材料，可观察到与磁性离子(3d过渡金属和4f稀土元素)相关的深能级能级位置随外加磁场增强发生明显有序的移动。In the process of measuring the deep energy level of non-diluted magnetic and dilute magnetic semiconductor material samples, the measurement device and measurement method are used to orderly change the magnetic field strength (300-3000 Gauss) of the external magnet to obtain the deep center of impurities and defects in the relevant semiconductor material and the externally applied Magnetic field interaction information. For non-diluted magnetic semiconductor materials, the energy level position of its deep energy level does not change with the change of the applied magnetic field strength. For dilute magnetic semiconductor materials, it can be observed that the positions of deep energy levels associated with magnetic ions (3d transition metals and 4f rare earth elements) move in an orderly manner with the increase of the applied magnetic field.
图2为掺铝和铁的n型ZnS稀磁半导体样品(曲线2，3和4)和掺铝n型ZnS参考样品(曲线1)在传统的深能级瞬态谱仪测量(无外加磁场)下获得的深能级瞬态谱。Figure 2 is the measurement of aluminum and iron-doped n-type ZnS dilute magnetic semiconductor samples (
图3分别为掺铝n型(1-3×1018cm-3)ZnS参考样品在传统的深能级瞬态谱仪(无外加磁场)(曲线1)和本发明专利具有外加磁场深能级瞬态谱仪测量(曲线1a)下获得的深能级瞬态谱。Figure 3 shows the Al-doped n-type (1-3×10 18 cm -3 ) ZnS reference sample in the traditional deep-level transient spectrometer (without external magnetic field) (curve 1) and the patent of the present invention with external magnetic field. The deep level transient spectrum obtained under the level transient spectrometer measurement (curve 1a).
图4分别为掺铝n型(1-3×1018cm-3)和n型掺铝、铁(1×1018cm-3)ZnS稀磁半导体样品在传统的深能级瞬态谱仪(无外加磁场)(曲线1，3a和3f)和本发明专利具有外加磁场深能级瞬态谱仪在不同外加磁场强度下(300-3000高斯)(曲线3b-3e)下获得的深能级瞬态谱。Figure 4 shows the samples of aluminum-doped n-type (1-3×10 18 cm -3 ) and n-type aluminum and iron-doped (1×10 18 cm -3 ) ZnS dilute magnetic semiconductor samples in the traditional deep-level transient spectrometer (no external magnetic field) (curves 1, 3a and 3f) and the patent of the present invention have deep energy level transient spectrometer with external magnetic field obtained under different external magnetic field strengths (300-3000 Gauss) (
图5分别为掺铝n型(1-3×1018cm-3)和n型掺铝、铁(1×1019cm-3)ZnS稀磁半导体样品在传统的深能级瞬态谱仪(无外加磁场)(曲线1，4a和4f)和本发明专利具有外加磁场深能级瞬态谱仪在不同外加磁场强度下(300-3000高斯)(曲线4b-4e)下获得的深能级瞬态谱。Figure 5 shows the samples of aluminum-doped n-type (1-3×10 18 cm -3 ) and n-type aluminum and iron-doped (1×10 19 cm -3 ) ZnS dilute magnetic semiconductor samples in the traditional deep-level transient spectrometer (no external magnetic field) (
图6为与铁有关的深施主态能量移动与磁场强度的关系。Figure 6 shows the relationship between the iron-related deep donor state energy transfer and the magnetic field strength.
本发明与现有测量装置和测量方法的比较Comparison between the present invention and existing measuring devices and measuring methods
本发明专利填补了传统的深能级瞬态谱对稀磁半导体材料深能级测量的空白，为研究稀磁半导体材料电学特性及其在自旋电子器件中的应用提供了非常重要的基础性资料。The patent of this invention fills the gap in the traditional deep-level transient spectrum for deep-level measurement of dilute magnetic semiconductor materials, and provides a very important foundation for the study of the electrical properties of dilute magnetic semiconductor materials and their applications in spintronic devices material.
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| CN101349735B (en) * | 2008-06-25 | 2010-09-29 | 安徽大学 | Photoionization cross section measurement method of deep energy level center in wide bandgap semiconductor material |
| CN101383305B (en) * | 2007-09-07 | 2011-08-10 | 中国科学院上海微系统与信息技术研究所 | Method for multi quantum well coupling measurement by diluted magnetic semiconductor material |
| CN106546638A (en) * | 2015-09-23 | 2017-03-29 | 中国科学院宁波材料技术与工程研究所 | Can be with the method for testing of defect concentration distribution |
| CN109342503A (en) * | 2018-11-16 | 2019-02-15 | 中国科学院半导体研究所 | Variable temperature platform and DLTS test system |
| CN110412441A (en) * | 2019-06-24 | 2019-11-05 | 深圳市森美协尔科技有限公司 | Vacuum high/low temperature semiconducter device testing probe station and semiconducter device testing method |
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| CN1003471B (en) * | 1985-04-03 | 1989-03-01 | 南京大学 | Setting method and instrument of high-resolution deep energy level transient spectrometer |
| JP2002033367A (en) * | 2000-07-17 | 2002-01-31 | Mitsubishi Electric Corp | Dlts sample structure, dlts measuring method, and semiconductor device |
| CN2444236Y (en) * | 2000-10-24 | 2001-08-22 | 中国科学院半导体研究所 | Photoelectric testing apparatus for temp. changing high resistance semiconductor material |
| JP3894133B2 (en) * | 2003-02-21 | 2007-03-14 | 株式会社Ｓｕｍｃｏ | Metal impurity evaluation method and evaluation substrate manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101383305B (en) * | 2007-09-07 | 2011-08-10 | 中国科学院上海微系统与信息技术研究所 | Method for multi quantum well coupling measurement by diluted magnetic semiconductor material |
| CN101349735B (en) * | 2008-06-25 | 2010-09-29 | 安徽大学 | Photoionization cross section measurement method of deep energy level center in wide bandgap semiconductor material |
| CN106546638A (en) * | 2015-09-23 | 2017-03-29 | 中国科学院宁波材料技术与工程研究所 | Can be with the method for testing of defect concentration distribution |
| CN106546638B (en) * | 2015-09-23 | 2019-02-26 | 中国科学院宁波材料技术与工程研究所 | Test Method for Band Defect Density Distribution |
| CN109342503A (en) * | 2018-11-16 | 2019-02-15 | 中国科学院半导体研究所 | Variable temperature platform and DLTS test system |
| CN109342503B (en) * | 2018-11-16 | 2020-12-11 | 中国科学院半导体研究所 | Variable temperature platform and DLTS test system |
| CN110412441A (en) * | 2019-06-24 | 2019-11-05 | 深圳市森美协尔科技有限公司 | Vacuum high/low temperature semiconducter device testing probe station and semiconducter device testing method |
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