CN1752764A - Deep level transient spectroscopy measurement device and measuring method with externally-applied magnetic field - Google Patents
Deep level transient spectroscopy measurement device and measuring method with externally-applied magnetic field Download PDFInfo
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- CN1752764A CN1752764A CN 200410078254 CN200410078254A CN1752764A CN 1752764 A CN1752764 A CN 1752764A CN 200410078254 CN200410078254 CN 200410078254 CN 200410078254 A CN200410078254 A CN 200410078254A CN 1752764 A CN1752764 A CN 1752764A
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Abstract
A kind of deep level transient spectroscopy measurement device with externally-applied magnetic field, be used for observing dilute magnetic semiconductor material because impurity and defective deep level and the externally-applied magnetic field interaction information that magnetic ion is introduced, it is characterized in that, comprising: a permanent magnet, this permanent magnet are cylindrical; One base plate, this base plate places the below of permanent magnet; Two protective shields, this protective shield are rectangle, and this two protective shield places the both sides of permanent magnet and base plate; One table top, this table top are rectangle, this table top place permanent magnet above; Make the height of two protective shields identical with the height that permanent magnet adds upper plate; Table top just in time covers permanent magnet and two protective shields.
Description
Technical field
Patent of the present invention relates to electrology characteristic (impurity of material and the defective deep level transient spectroscopy of semiconductor (non magnetic and magnetic) material and related device thereof, sample capacitance-voltage and current-voltage characteristic curve) measurement mechanism and measuring method, particularly relate to the externally-applied magnetic field device that is used for the dilute magnetic semiconductor deep level transient spectroscopy measurement and produce the relevant impurity and the interaction information of defective deep level and externally-applied magnetic field because magnetic ion mixes with measuring method and dilute magnetic semiconductor material.
Background technology
The .V.Lang of U.S. Bell D. Lab had invented impurity and the defective deep-level transient spectral technology that is used to measure non magnetic semiconductor material in 1974, had opened semiconductor material electricity characteristic measuring frontier.For research with use novel semiconductor material and related electronic devices lays a solid foundation.Fast development along with semiconductor product, the novel magnetic semiconductor material occurs, but traditional deep level transient spectroscopy measurement device (no externally-applied magnetic field) can't satisfy material electricity characteristic measuring needs, especially magnetic semiconductor material utilization field---spin electric device.Because the deep level information in the magnetic semiconductor material that obtains under no externally-applied magnetic field condition can not reflect its electrology characteristic and behavior comprehensively.Along with the application of spin electric device, press for understanding impurity and the electricity behavior of defective and the interaction information between them in the material under externally-applied magnetic field.But up to the present, we have inquired about domestic and international data of literatures, all do not have the deep level transient spectroscopy measurement device with externally-applied magnetic field and the report of measuring method.We apply for this patent of invention, satisfy the needs of dilute magnetic semiconductor material and relevant spin electric device industry development thereof just.
Summary of the invention
The objective of the invention is to, a kind of deep level transient spectroscopy measurement device and measuring method with externally-applied magnetic field is provided, can be used for solving magnetic ion is introduced in the dilute magnetic semiconductor material that at present traditional semiconductor material impurity and defective deep level transient spectroscopy measurement can't provide deep level and the interactional information of externally-applied magnetic field, semiconductor (non-magnetic and magnetic) impurities of materials and defective deep level transient spectroscopy measurement device and measuring method under no magnetic field and externally-applied magnetic field condition are provided.Use this measurement mechanism can in externally-applied magnetic field intensity (300-3000 Gauss) scope of broad, provide impurity and defective deep level and externally-applied magnetic field interaction information in dilute magnetic semiconductor material and the relevant spin electric device with measuring method.Deep level transient spectroscopy measurement device and measuring method that the present invention has externally-applied magnetic field are to grow up on traditional deep level transient spectroscopy measurement basis.
Its technical scheme of the present invention comprises:
A kind of deep level transient spectroscopy measurement device with externally-applied magnetic field of the present invention is used for observing dilute magnetic semiconductor material because impurity and defective deep level and the externally-applied magnetic field interaction information that magnetic ion is introduced is characterized in that, comprising:
One permanent magnet, this permanent magnet are cylindrical;
One base plate, this base plate places the below of permanent magnet;
Two protective shields, this protective shield are rectangle, and this two protective shield places the both sides of permanent magnet and base plate;
One table top, this table top are rectangle, this table top place permanent magnet above;
Make the height of two protective shields identical with the height that permanent magnet adds upper plate; Table top just in time topped firmly permanent magnet and two protective shields.
Wherein the material of this protective shield is a teflon.
Wherein the material of this base plate is the anaerobic red copper.
Wherein this permanent magnet is that rare earth material is made, and diameter is 30mm, and the magnet strength scope is in 300-3000 Gauss, and its thickness range is between 3.5-6.5mm.
Wherein the material of this table top is a teflon.
A kind of deep level transient spectroscopy measurement method with externally-applied magnetic field of the present invention is used for observing dilute magnetic semiconductor material because impurity and defective deep level and the externally-applied magnetic field interaction information that magnetic ion is introduced is characterized in that, comprises the steps:
Step 1: the sample stage that will be placed with sample places on the table top of aforesaid deep level transient spectroscopy measurement device with externally-applied magnetic field;
Step 2: the deep level transient spectroscopy measurement device that will be placed with the sample stage of sample and have an externally-applied magnetic field places the sample chamber of vacuum tank, builds the outer cover of sample chamber, vacuumizes;
Step 3: change the magnetic field intensity that adds permanent magnet in an orderly manner, because the variation of magnetic field intensity, permanent magnet thickness changes thereupon, meanwhile, change base plate thickness, make the space between table top that is placed on the permanent magnet and the sample stage of the placing measuring samples little, even to guarantee by the magnetic field intensity at testing sample center;
Step 4:, can obtain the information that orderly red shift takes place with the increase of externally-applied magnetic field for impurity in sample under the different externally-applied magnetic fields and defective deep centre signal from deep level transient spectroscopy output along with the rising of testing sample temperature.
Wherein the temperature with testing sample is reduced to liquid nitrogen temperature 77K, applies a reverse biased V on testing sample
R, and at V
RThe direct impulse V that last superposition is continuous
P, its pulsewidth is 100 μ s.
Wherein be evacuated down to 10
-1Holder.
Wherein change the magnetic field intensity that adds permanent magnet in an orderly manner, this magnetic field intensity is 300-3000 Gauss.
Wherein be placed on the table top on the permanent magnet and place space between the sample stage of measuring samples less than 0.2-0.3mm.
Description of drawings
For further specifying the technology contents of patent of the present invention, after being described in more detail in below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is sectional view of the present invention and vertical view.
Fig. 2 mixes the n type ZnS dilute magnetic semiconductor sample (curve 2,3 and 4) of aluminium and iron and mixes aluminium n type ZnS reference sample (curve 1) is measured acquisition under (no externally-applied magnetic field) at traditional deep-level transient spectrometer deep level transient spectroscopy.
Fig. 3 is respectively and mixes aluminium n type (1-3 * 10
18Cm
-3) the ZnS reference sample has externally-applied magnetic field deep-level transient spectrometer in traditional deep-level transient spectrometer (no externally-applied magnetic field) (curve 1) and patent of the present invention and measure deep level transient spectroscopy that (curve 1a) obtains down.
Fig. 4 is respectively and mixes aluminium n type (1-3 * 10
18Cm
-3) and the n type mix aluminium, iron (1 * 10
18Cm
-3) ZnS dilute magnetic semiconductor sample has the externally-applied magnetic field deep-level transient spectrometer deep level transient spectroscopy that (300-3000 Gauss) (curve 3b-3e) obtains down under different externally-applied magnetic field intensity in traditional deep-level transient spectrometer (no externally-applied magnetic field) ( curve 1,3a and 3f) and patent of the present invention.
Fig. 5 is respectively and mixes aluminium n type (1-3 * 10
18Cm
-3) and the n type mix aluminium, iron (1 * 10
19Cm
-3) ZnS dilute magnetic semiconductor sample has the externally-applied magnetic field deep-level transient spectrometer deep level transient spectroscopy that (300-3000 Gauss) (curve 4b-4e) obtains down under different externally-applied magnetic field intensity in traditional deep-level transient spectrometer (no externally-applied magnetic field) ( curve 1,4a and 4f) and patent of the present invention.
Fig. 6 moves relation with magnetic field intensity for the deep donor attitude energy relevant with iron.
Embodiment
See also shown in Figure 1ly, a kind of deep level transient spectroscopy measurement device with externally-applied magnetic field of the present invention is used for observing dilute magnetic semiconductor material because impurity and defective deep level and the externally-applied magnetic field interaction information that magnetic ion is introduced comprises:
One permanent magnet C, this permanent magnet C is cylindrical; This permanent magnet C is that rare earth material is made, and diameter is 30mm, and the magnet strength scope is in 300-3000 Gauss, and its thickness range is between 3.5-6.5mm;
One base plate B, this base plate B places the below of permanent magnet C; The material of this base plate B is the anaerobic red copper;
Two protective shield A, this protective shield A is a rectangle, this two protective shield A places the both sides of permanent magnet C and base plate B; The material of this protective shield A is a teflon;
One table top D, this table top D is a rectangle, this table top D place permanent magnet C above; The material of this table top D is a teflon;
Make the height of two protective shield A identical with the height that permanent magnet C adds upper plate B; Table top D just in time topped live in permanent magnet C and two protective shield A.
A kind of deep level transient spectroscopy measurement method (please in conjunction with consulting Fig. 1) with externally-applied magnetic field of the present invention is used for observing dilute magnetic semiconductor material because impurity and defective deep level and the externally-applied magnetic field interaction information that magnetic ion is introduced comprises the steps:
Step 1: the sample stage that will be placed with sample places on the table top D of aforesaid deep level transient spectroscopy measurement device with externally-applied magnetic field;
Step 2: the deep level transient spectroscopy measurement device that will be placed with the sample stage of sample and have an externally-applied magnetic field places the sample chamber of vacuum tank, builds the outer cover of sample chamber, is evacuated down to 10
-1Holder;
Step 3: change the magnetic field intensity that adds permanent magnet C in an orderly manner, this magnetic field intensity is 300-3000 Gauss, because the variation of magnetic field intensity, permanent magnet C thickness changes thereupon, meanwhile, change base plate B thickness, make space between table top D that is placed on the permanent magnet C and the sample stage of placing measuring samples less than 0.2-0.3mm, even with the magnetic field intensity that guarantees to pass through the testing sample center;
Step 4:, can obtain the information that orderly red shift takes place with the increase of externally-applied magnetic field for impurity in sample under the different externally-applied magnetic fields and defective deep centre signal from deep level transient spectroscopy output along with the rising of testing sample temperature.
Wherein the temperature with testing sample is reduced to liquid nitrogen temperature 77K, applies a reverse biased V on testing sample
R, and at V
RThe direct impulse V that last superposition is continuous
p, its pulsewidth is 100 μ s.
Protective shield A wherein (this protective shield is long to be 34mm, and wide is 35mm, and height is 13mm).Protective shield A effect has two, and one prevents sample effectively in measuring process, raises owing to measure temperature, and heat conduction and be radiated permanent magnet C causes the magnetic field intensity of permanent magnet C obviously to reduce.It two is used for fixed permanent magnet C position, and the sample stage center that guarantees the permanent magnet C center of circle and place testing sample is on the same perpendicular line, provides uniformly magnetic field intensity to pass dilute magnetic semiconductor material sample to be measured.Base plate B is an anaerobic red copper piece, and long is 32mm, and wide is 30mm, and its thickness depends on the permanent magnet C thickness of different magnetic field intensity.The effect of base plate B has two, and the heat that one will be transmitted to permanent magnet C effectively passes away, and permanent magnet C temperature is remained on below 40 ℃.Space between the sample stage of its two adjusting permanent magnet C and placement sample makes its space distance as far as possible little.Between permanent magnet C and sample stage, be anti-heat conduction and radiation, put into by what teflon was processed into and thickly be the table top D of 1mm.This externally-applied magnetic field specimen holder device the permanent magnet C center of circle and sample stage center are remained on the same perpendicular line and and sample stage between space as far as possible little (0.2-0.3mm).For selecting different magnetic field intensitys, prepared the permanent magnet C of a cover different magnetic field intensity specially, its magnetic field intensity scope is 300-3000 Gauss.
With dilute magnetic semiconductor sample to be measured, protective shield A, base plate B, permanent magnet C and table top D assemble by position shown in Figure 1, build the outer cover of sample chamber, are evacuated down to 10
-1Holder.Change the magnetic field intensity (from 300 to 3000 Gauss) that adds magnet in an orderly manner, the temperature that reduces testing sample is to liquid nitrogen temperature (77K).On sample, apply a reverse biased (V
R), and at V
RThe direct impulse V that last superposition is continuous
P(its pulsewidth is 100 μ s).Along with the rising of sample measurement temperature, can obtain impurity and defective deep centre signal and externally-applied magnetic field interaction information in sample under the different externally-applied magnetic fields in the deep level transient spectroscopy output.
Use this measurement mechanism and measuring method in non-rare magnetic and the dilute magnetic semiconductor material sample deep energy level measurement process, change the magnetic field intensity (300-3000 Gauss) that adds magnet in order and can obtain impurity and defective deep centre and externally-applied magnetic field interaction information in the related semiconductor material.For non-dilute magnetic semiconductor material, the level of energy of its deep level does not change with externally-applied magnetic field intensity.For dilute magnetic semiconductor material, can be observed the deep level level of energy relevant and strengthen obviously orderly the moving of generation with externally-applied magnetic field with magnetic ion (3d transition metal and 4f rare earth element).
Fig. 2 mixes the n type ZnS dilute magnetic semiconductor sample (curve 2,3 and 4) of aluminium and iron and mixes aluminium n type ZnS reference sample (curve 1) is measured acquisition under (no externally-applied magnetic field) at traditional deep-level transient spectrometer deep level transient spectroscopy.
Fig. 3 is respectively and mixes aluminium n type (1-3 * 10
18Cm
-3) the ZnS reference sample has externally-applied magnetic field deep-level transient spectrometer in traditional deep-level transient spectrometer (no externally-applied magnetic field) (curve 1) and patent of the present invention and measure deep level transient spectroscopy that (curve 1a) obtains down.
Fig. 4 is respectively and mixes aluminium n type (1-3 * 10
18Cm
-3) and the n type mix aluminium, iron (1 * 10
18Cm
-3) ZnS dilute magnetic semiconductor sample has the externally-applied magnetic field deep-level transient spectrometer deep level transient spectroscopy that (300-3000 Gauss) (curve 3b-3e) obtains down under different externally-applied magnetic field intensity in traditional deep-level transient spectrometer (no externally-applied magnetic field) ( curve 1,3a and 3f) and patent of the present invention.
Fig. 5 is respectively and mixes aluminium n type (1-3 * 10
18Cm
-3) and the n type mix aluminium, iron (1 * 10
19Cm
-3) ZnS dilute magnetic semiconductor sample has the externally-applied magnetic field deep-level transient spectrometer deep level transient spectroscopy that (300-3000 Gauss) (curve 4b-4e) obtains down under different externally-applied magnetic field intensity in traditional deep-level transient spectrometer (no externally-applied magnetic field) ( curve 1,4a and 4f) and patent of the present invention.
Fig. 6 moves relation with magnetic field intensity for the deep donor attitude energy relevant with iron.
The comparison of the present invention and existing measurement mechanism and measuring method
Patent of the present invention has been filled up the traditional deep level transient spectroscopy blank to the dilute magnetic semiconductor material deep energy level measurement, for research dilute magnetic semiconductor material electrology characteristic and the application in spin electric device thereof provide very important basic information.
Claims (10)
1. the deep level transient spectroscopy measurement device with externally-applied magnetic field is used for observing dilute magnetic semiconductor material because impurity and defective deep level and the externally-applied magnetic field interaction information that magnetic ion is introduced is characterized in that, comprising:
One permanent magnet, this permanent magnet are cylindrical;
One base plate, this base plate places the below of permanent magnet;
Two protective shields, this protective shield are rectangle, and this two protective shield places the both sides of permanent magnet and base plate;
One table top, this table top are rectangle, this table top place permanent magnet above;
Make the height of two protective shields identical with the height that permanent magnet adds upper plate; Table top just in time topped firmly permanent magnet and two protective shields.
2. according to claims 1 described deep level transient spectroscopy measurement device, it is characterized in that wherein the material of this protective shield is a teflon with externally-applied magnetic field.
3. according to claims 1 described deep level transient spectroscopy measurement device, it is characterized in that wherein the material of this base plate is the anaerobic red copper with externally-applied magnetic field.
4. according to claims 1 described deep level transient spectroscopy measurement device with externally-applied magnetic field, it is characterized in that wherein this permanent magnet is that rare earth material is made, diameter is 30mm, the magnet strength scope is in 300-3000 Gauss, and its thickness range is between 3.5-6.5mm.
5. according to claims 1 described deep level transient spectroscopy measurement device, it is characterized in that wherein the material of this table top is a teflon with externally-applied magnetic field.
6. the deep level transient spectroscopy measurement method with externally-applied magnetic field is used for observing dilute magnetic semiconductor material because impurity and defective deep level and the externally-applied magnetic field interaction information that magnetic ion is introduced is characterized in that, comprises the steps:
Step 1: the sample stage that will be placed with sample places on the table top of aforesaid deep level transient spectroscopy measurement device with externally-applied magnetic field;
Step 2: the deep level transient spectroscopy measurement device that will be placed with the sample stage of sample and have an externally-applied magnetic field places the sample chamber of vacuum tank, builds the outer cover of sample chamber, vacuumizes;
Step 3: change the magnetic field intensity that adds permanent magnet in an orderly manner, because the variation of magnetic field intensity, permanent magnet thickness changes thereupon, meanwhile, change base plate thickness, make the space between table top that is placed on the permanent magnet and the sample stage of the placing measuring samples little, even to guarantee by the magnetic field intensity at testing sample center;
Step 4:, can obtain the information that orderly red shift takes place with the increase of externally-applied magnetic field for impurity in sample under the different externally-applied magnetic fields and defective deep centre signal from deep level transient spectroscopy output along with the rising of testing sample temperature.
7. the deep level transient spectroscopy measurement method with externally-applied magnetic field according to claim 6 is characterized in that wherein the temperature with testing sample is reduced to liquid nitrogen temperature 77K, applies a reverse biased V on testing sample
R, and at V
RThe direct impulse V that last superposition is continuous
P, its pulsewidth is 100 μ s.
8. the deep level transient spectroscopy measurement method with externally-applied magnetic field according to claim 6 is characterized in that, wherein is evacuated down to 10
-1Holder.
9. the deep level transient spectroscopy measurement method with externally-applied magnetic field according to claim 6 is characterized in that, wherein changes the magnetic field intensity that adds permanent magnet in an orderly manner, and this magnetic field intensity is 300-3000 Gauss.
10. the deep level transient spectroscopy measurement method with externally-applied magnetic field according to claim 6 is characterized in that, wherein is placed on the table top on the permanent magnet and places space between the sample stage of measuring samples less than 0.2-0.3mm.
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| CNB2004100782541A CN100354638C (en) | 2004-09-22 | 2004-09-22 | Measuring device of deep energy level transient state spectrum having external magnetic field and measuring method |
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| CN100354638C CN100354638C (en) | 2007-12-12 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101349735B (en) * | 2008-06-25 | 2010-09-29 | 安徽大学 | Method for testing light ionization cross section of deep energy level center in wide band cap semiconductor material |
| CN101383305B (en) * | 2007-09-07 | 2011-08-10 | 中国科学院上海微系统与信息技术研究所 | Method for multi quantum well coupling measurement by diluted magnetic semiconductor material |
| CN106546638A (en) * | 2015-09-23 | 2017-03-29 | 中国科学院宁波材料技术与工程研究所 | Can be with the method for testing of defect concentration distribution |
| CN109342503A (en) * | 2018-11-16 | 2019-02-15 | 中国科学院半导体研究所 | Alternating temperature platform and DLTS test macro |
| CN110412441A (en) * | 2019-06-24 | 2019-11-05 | 深圳市森美协尔科技有限公司 | Vacuum high/low temperature semiconducter device testing probe station and semiconducter device testing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1003471B (en) * | 1985-04-03 | 1989-03-01 | 南京大学 | Setting method and apparatus for deep energy level transient spectrometer with high resolving power |
| JP2002033367A (en) * | 2000-07-17 | 2002-01-31 | Mitsubishi Electric Corp | Dlts sample structure, dlts measuring method, and semiconductor device |
| CN2444236Y (en) * | 2000-10-24 | 2001-08-22 | 中国科学院半导体研究所 | Photoelectric testing apparatus for temp. changing high resistance semiconductor material |
| JP3894133B2 (en) * | 2003-02-21 | 2007-03-14 | 株式会社Ｓｕｍｃｏ | Metal impurity evaluation method and evaluation substrate manufacturing method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101383305B (en) * | 2007-09-07 | 2011-08-10 | 中国科学院上海微系统与信息技术研究所 | Method for multi quantum well coupling measurement by diluted magnetic semiconductor material |
| CN101349735B (en) * | 2008-06-25 | 2010-09-29 | 安徽大学 | Method for testing light ionization cross section of deep energy level center in wide band cap semiconductor material |
| CN106546638A (en) * | 2015-09-23 | 2017-03-29 | 中国科学院宁波材料技术与工程研究所 | Can be with the method for testing of defect concentration distribution |
| CN106546638B (en) * | 2015-09-23 | 2019-02-26 | 中国科学院宁波材料技术与工程研究所 | The test method of energy band defect concentration distribution |
| CN109342503A (en) * | 2018-11-16 | 2019-02-15 | 中国科学院半导体研究所 | Alternating temperature platform and DLTS test macro |
| CN109342503B (en) * | 2018-11-16 | 2020-12-11 | 中国科学院半导体研究所 | Variable-temperature platform and DLTS (digital Living System) testing system |
| CN110412441A (en) * | 2019-06-24 | 2019-11-05 | 深圳市森美协尔科技有限公司 | Vacuum high/low temperature semiconducter device testing probe station and semiconducter device testing method |
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| CN100354638C (en) | 2007-12-12 |
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