CN1750181A - Semimetal magnetic material with high spinning polarizability - Google Patents
Semimetal magnetic material with high spinning polarizability Download PDFInfo
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Abstract
The present invention relates to a series of metallicl magnetic materials with high spinning polarizability, this series material has chemical formula: Mn
xCo
yN
zM
w, wherein, N is an III-V family element, as: Al, Ga, In, Si, Ge, Sn, one or more of Sb etc., M are transition element, as: V, Cr, Fe, one or more of Ni etc.; 2.2 〉=x 〉=1.8,1.2 〉=y＞0,1.2 〉=z＞0,0.99 〉=w 〉=0, x+y+z+w=4.Described Mn
xCo
yN
zM
wSeries material: what spin polarizability was the highest is 100%, is typical semimetal magnetic material, and minimum spin polarizability is 80%.
Description
Technical field
The present invention relates generally to the high spinning polarizability material, particularly relate to and have spin polarizability near hundred-percent semimetal magnetic material.
Background technology
Electronics is the unified carrier of electric charge and spin, electronics with spin attribute is in conductive process, when the characteristic length of material yardstick and physics is suitable, can show unique physical effect, for example giant magnetoresistance (GMR), tunneling magnetic resistance, super large magneto-resistance effect and spin transfer etc.In in the past 100 years, transport process with the electric field controls electron charge is the microelectronics of basic principle, changed daily life all sidedly, so, whether can be by another attribute one spin of control electronics, realize the manipulation of behavior that it is transported, thereby create the new information age? the many scientific achievements and the commercial Application fact that have obtained in the spintronics field show, a kind of like this hope is unusual reality, and will be 21 century one of high-tech area such as information science the crux place of important breakthrough is arranged.The application meeting of high spinning polarizability material greatly promotes the development of computer storage aspect.Giant magnetoresistance is the example of spintronics, and it is found to material preparation from physics rapidly, and until last device industrialization: since 1988 found this new material, computer information storage technology had entered the GNR epoch (IBM Corporation's language).For example, hard disc of computer is after using the GMR playback head, and its packing density improves nearly 500 times.But these spintronics function elements all require material to have respectively near the Fermi energy level from the number of electrons imbalance that spins up and spin is downward, and this imbalance is serious more favourable more, also promptly requires the spin polarizability of material high more good more.
Electron spin is relevant with the magnetic of material.An electronic spin can be regarded as the small magnet that some have polarity.Electronic spin can spin up (↑) and spin downward (↓) certainly.Utilize and have up and down the percentage of number of electrons in the material and can describe spin polarizability P.For example: the spin polarizability of Cu is 0, and the P of common magnetic material is about 40%.
In the eighties in last century, Dutch scholar Groot etc. have found a kind of novel magnetic material through Theoretical Calculation, and they are referred to as " semimetal ".This new material unique distinction is that it has only a kind of spin direction is metal, that is to say that all electronics that show metalline all have identical spin orientation, and another kind of opposite spin orientation then shows insulation or semiconductor property.In theory, this semi-metallic can have 100% high spinning polarizability.Have that all electronics have identical spin orientation in the material of 100%P, all make progress or all downward, according to band theory, this means only there is a kind of spin probability in this material just only have a kind of spin energy band, and another kind of spin energy band is empty.And be simultaneous for two kinds of spin energy bands of common metal, this also is that this material is called as semimetallic reason.Thereby energy state density becomes the semi-metallic criterion in normal circumstances.For Heusler type semimetal, when T=OK, its spin magnetic moment just in time is the Bohr magneton of integral multiple.This is because in this material, total spin number N=N ↑+N ↓ be integer; And under the situation that counts the energy gap district, each spin orientation, i.e. N ↑ and N ↓ also all be integer; So N ↑-N ↓ also must be an integer, if ignore the additional magnetic moment that spin-orbit coupling causes this moment, will measure an integer so or very near the spin magnetic moment of integer.But it is be noted that utilizing this is necessary with the integer spin magnetic moment as the semimetal criterion, but and insufficient.
Summary of the invention
To the objective of the invention is the new function material that has high spinning polarizability in order seeking, particularly to seek and new have spin polarizability, thereby a series of new magnetic materials with high spinning polarizability are provided up to hundred-percent semimetal magnetic material.
The invention provides semimetal magnetic material, have following chemical formula Mn with high spinning polarizability
xCo
yN
zM
w, wherein,
N is an III-V family element, as: Al, Ga, In, Si, Ge, Sn, one or more of Sb etc., M are transition element, as: V, Cr, Fe, one or more of Ni etc.;
2.2≥x≥1.8，1.2≥y＞0，1.2≥z＞0，0.99≥w≥0，x+y+z+w＝4。
Described Mn
xCo
yN
zM
wSeries alloy is a collection of alloy magnetic material with high spinning polarizability, and Theoretical Calculation spin polarizability the highest in this series material reaches 100%, is typical semimetal magnetic material, and minimum spin polarizability is 90%.Its measured data of experiment is up to 97%, and minimum is 80%.
Description of drawings
Fig. 1 is Mn
2Calculating energy state density (DOS) curve of CoAl alloy.
Fig. 2 is Mn
2Calculating energy state density (DOS) curve of CoSb alloy.
Fig. 3 is Mn
2Co
0.9Fe
0.1Calculating energy state density (DOS) curve of Ga alloy.
Embodiment
Embodiment 1:
According to chemical formula Mn
2CoAl takes by weighing Mn, Co and Al, utilizes the method for conventional electric arc melting to carry out melt back after then it being mixed, and makes sample even.Its preparation condition is: be evacuated down to 1 * 10
-1-1 * 10
-6Charge into argon gas behind the Pa, under the protection of 0.01 to 1MPa normal pressure or mobile argon gas, carry out electric arc melting.
The materials chemistry formula is Mn
2The magnetic alloy of CoAl; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 1.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 2:
According to chemical formula Mn
2CoGa takes by weighing Mn, Co and Ga, and preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2The magnetic alloy of CoGa; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 1.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 3:
According to chemical formula Mn
2CoSi takes by weighing Mn, Co and Si, and preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2The magnetic alloy of CoSi; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 2.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 4:
According to chemical formula Mn
2CoIn takes by weighing Mn, Co and In, and preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2The magnetic alloy of CoIn; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 1.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 5:
According to chemical formula Mn
2CoGe takes by weighing Mn, Co and Ge, and preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2The magnetic alloy of CoGe; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 1.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 2.
Embodiment 6:
According to chemical formula Mn
2CoSn takes by weighing Mn, Co and Sn, and preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2The magnetic alloy of CoSn; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 2.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 7:
According to chemical formula Mn
2CoSb takes by weighing Mn, Co and Sb, and preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2The magnetic alloy of CoSb; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 2.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 8:
According to chemical formula Mn
2.2Co
0.8Sb takes by weighing Mn, Co and Sb, and preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2.2Co
0.8The magnetic alloy of Sb; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 2.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 9:
According to chemical formula Mn
2Co
0.8Cr
0.2Al takes by weighing Mn, Co, Cr and Al, and preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2Co
0.8Cr
0.2The magnetic alloy of Al; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 1.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 10:
According to chemical formula Mn
2Co
0.9Fe
0.1Ga takes by weighing Mn, Co, Fe and Ga, and preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2Co
0.9Fe
0.1The magnetic alloy of Ga; Calculate the spin polarizability 93% that obtains.It calculates gained energy state density curve shape and sees Fig. 3.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 11:
According to chemical formula Mn
2Co
0.5V
0.5Al takes by weighing Mn, Co, V and Al, and preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2Co
0.5V
0.5The magnetic alloy of Al; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 1.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 12:
According to chemical formula Mn
2Co
0.8Ni
0.2Sb takes by weighing Mn, Co, Ni and Sb, and preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2Co
0.8Ni
0.2The magnetic alloy of Sb; Calculating the spin polarizability that obtains is 92%.It calculates gained energy state density curve shape and sees Fig. 3.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 13:
According to chemical formula Mn
2CoSb
0.8In
0.2Take by weighing Mn, Co, Sb and In, preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2CoSb
0.8In
0.2Magnetic alloy; Calculating the spin polarizability that obtains is 91%.It calculates gained energy state density curve shape and sees Fig. 3.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 14:
According to chemical formula Mn
2CoSb
0.3Al
0.7Take by weighing Mn, Co, Sb and Al, preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2CoSb
0.3Al
0.7Magnetic alloy; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 1.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 15:
According to chemical formula Mn
1.8CoGe
1.2Take by weighing Mn, Co and Ge, preparation technology is with embodiment 1.
The materials chemistry formula is Mn
1.8CoGe
1.2Magnetic alloy; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 1.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 16:
According to chemical formula Mn
2Co
1.1Si
0.9Take by weighing Mn, Co and Si, preparation technology is with embodiment 1.
The materials chemistry formula is Mn
2Co
1.1Si
0.9Magnetic alloy; Calculating the spin polarizability that obtains is 100%, is typical semi-metallic.It calculates gained energy state density curve shape and sees Fig. 1.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
Embodiment 17
According to chemical formula Mn
1.8Co
1.1Si
0.9Sb
0.2Take by weighing Mn, Co, Si and Sb, preparation technology together
Embodiment 1.
The materials chemistry formula is Mn
1.8Co
1.1Si
0.9Sb
0.2Magnetic alloy; Calculating the spin polarizability that obtains is 90%.It calculates gained energy state density curve shape and sees Fig. 3.Measure its spin polarizability and saturation magnetization, obtain numerical value and see Table 1.
| Sample | Composition | Calculate the P value | Measure the P value | Measure saturation magnetization (μ B) |
| 1 | Mn2CoAl | 100％ | 96.2％ | 1.98 |
| 2 | Mn2CoGa | 100％ | 95.1％ | 2.01 |
| 3 | Mn2CoSi | 100％ | 94.6％ | 1.98 |
| 4 | Mn2CoIn | 100％ | 95％ | 2.99 |
| 5 | Mn2CoGe | 100％ | 95.3％ | 2.99 |
| 6 | Mn2CoSn | 100％ | 94.9％ | 3.01 |
| 7 | Mn2CoSb | 100％ | 96.1％ | 3.98 |
| 8 | Mn 2.2Co 0.8Sb | 100％ | 96％ | 3.97 |
| 9 | Mn 2Co 0.8Cr 0.2Al | 100％ | 94.1％ | 1.99 |
| 10 | Mn 2Co 0.9Fe 0.1Ga | 93％ | 85％ | 1.95 |
| 11 | Mn 2Co 0.5V 0.5Al | 100％ | 93％ | 1.99 |
| 12 | Mn 2Co 0.8Ni 0.2Sb | 92％ | 89％ | 3.99 |
| 13 | Mn 2CoSb 0.8In 0.2 | 91％ | 85％ | 3.90 |
| 14 | Mn 2CoSb 0.3Al 0.7 | 100％ | 94％ | 2.98 |
| 15 | Mn 1.8CoGe 1.2 | 100％ | 95％ | 2.99 |
| 16 | Mn 2Co 1.1Si 0.9 | 100％ | 95％ | 2.99 |
| 17 | Mn 18Co 1.1Si 0.9Sb 0.2 | 90％ | 80％ | 2.96 |
Table 1
Claims (1)
1, a kind of metallicl magnetic material with high spinning polarizability is characterized in that: have following composition: Mn
xCo
yN
zM
w, wherein,
N is an III-V family element, as: Al, Ga, In, Si, Ge, Sn, one or more of Sb etc., M are transition elements, as: V, Cr, Fe, one or more of Ni etc.;
2.2≥x≥1.8，1.2≥y＞0，1.2≥z＞0，0.99≥w≥0，x+y+z+w＝4。
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| CN100392774C CN100392774C (en) | 2008-06-04 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102129905A (en) * | 2010-12-21 | 2011-07-20 | 河北工业大学 | Semimetal magnetic material with high spin polarization |
| CN102094145B (en) * | 2009-12-14 | 2013-04-03 | 中国科学院物理研究所 | Method for regulating martensite phase transformation and magnetoresistance effect of Ni-Co-Mn-In alloy |
| CN103334043A (en) * | 2013-03-22 | 2013-10-02 | 中国科学院物理研究所 | Magnetic alloy serving as magnetic refrigeration material |
| CN105390223A (en) * | 2015-10-28 | 2016-03-09 | 上海电力学院 | Room temperature magnetic refrigeration alloy material and preparation method therefor |
| CN109576530A (en) * | 2018-12-27 | 2019-04-05 | 江西理工大学 | Huge exchange biased Mn based alloy of one kind and its preparation method and application |
| CN112899543A (en) * | 2021-01-18 | 2021-06-04 | 河北工业大学 | Resistivity-adjustable spinning bandgap-free semiconductor material and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6937447B2 (en) * | 2001-09-19 | 2005-08-30 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory |
| JP4487472B2 (en) * | 2002-07-05 | 2010-06-23 | 株式会社日立製作所 | Magnetoresistive element, magnetic head including the same, magnetic recording apparatus, and magnetic memory |
| JP4128938B2 (en) * | 2003-10-28 | 2008-07-30 | 株式会社日立製作所 | Magnetic head and magnetic recording / reproducing apparatus |
-
2005
- 2005-10-20 CN CNB2005101091668A patent/CN100392774C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102094145B (en) * | 2009-12-14 | 2013-04-03 | 中国科学院物理研究所 | Method for regulating martensite phase transformation and magnetoresistance effect of Ni-Co-Mn-In alloy |
| CN102129905A (en) * | 2010-12-21 | 2011-07-20 | 河北工业大学 | Semimetal magnetic material with high spin polarization |
| CN103334043A (en) * | 2013-03-22 | 2013-10-02 | 中国科学院物理研究所 | Magnetic alloy serving as magnetic refrigeration material |
| CN103334043B (en) * | 2013-03-22 | 2015-07-08 | 中国科学院物理研究所 | Magnetic alloy serving as magnetic refrigeration material |
| CN105390223A (en) * | 2015-10-28 | 2016-03-09 | 上海电力学院 | Room temperature magnetic refrigeration alloy material and preparation method therefor |
| CN105390223B (en) * | 2015-10-28 | 2018-08-28 | 上海电力学院 | A kind of room temperature magnetic refrigerating alloy material and preparation method |
| CN109576530A (en) * | 2018-12-27 | 2019-04-05 | 江西理工大学 | Huge exchange biased Mn based alloy of one kind and its preparation method and application |
| CN112899543A (en) * | 2021-01-18 | 2021-06-04 | 河北工业大学 | Resistivity-adjustable spinning bandgap-free semiconductor material and preparation method thereof |
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|---|---|
| CN100392774C (en) | 2008-06-04 |
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