CN1748448A - Multilayer substrate and method for producing same - Google Patents

Abstract

In a multilayered substrate obtained by laminating a plurality of substrates and including plural kinds of functional elements therein, a first functional material film and a second functional material film are provided on the same plane and first and second functional elements are formed by the first and second functional material films, respectively. The functional material film may be formed on a transferring substrate by a thin film method and may be transferred to the substrate.

Description

Multilager base plate and manufacture method thereof

Technical field

The present invention relates to the electronic component of a kind of multilager base plate and this substrate of use, and their manufacture method, relate in particular to a kind of structure and manufacture method that in the organic resin substrate, is provided with such as the multilager base plate of function element such as capacitor or inductor.

Background technology

Recently, along with such as the size of electronic installations such as mobile phone or notebook computer and reducing and the increase of function and the raising of performance of thickness, the performance that is starved of the size that reduces their employed substrates and thickness and improves substrate.For this reason, proposed multiple board structure, wherein, substrate can be multilayer and can be set up within it such as the function element of capacitor, inductor or resistor, thereby realize high-density installation.

The general such formation of organic multilayer substrate: will be distributed to such as the functional material of dielectric ceramic powder or magnetic in the resin substrate that comprises glass cloth, and the electrode that formed by thin metal film and coil and a plurality of substrate will be set simultaneously be laminated to each other by means of the separator that is provided with therebetween.And, as a kind of method that thin-film material is set, directly on organic substrate, form film and it is stacked by sputtering method in substrate.In addition, as for utilizing thick film, for example, known a kind of engineering method, its use has the metal forming of resin.The open text of JP-A-2002-271038 has just illustrated such board structure, and wherein, the function element layer is set in the substrate.

Mixed and be distributed to composite base plate in the organic resin material according to ceramic material wherein, to compare with resin substrate, its electrical characteristic can increase to a certain extent, but the original electrical characteristic of ceramic material can reduce greatly.Therefore, can not obtain high dielectric constant and Q value.For example, be difficult to a capacitor element with high capacitance is put into the substrate with conventional substrate structure.Therefore, in the electronic component modular under existing situation, be necessary to use a kind of like this structure: wherein the capacitor of exhibiting high surface installation elements such as surface installing type is installed on the surface of substrate.

In addition, the problem of existence is: the ceramic dielectric film that forms by membrane process has low degree of crystallinity usually and can not demonstrate fully the original electrical characteristic of material.Therefore, in order to form film, be necessary heated substrates (about 500 ℃ to 600 ℃ or higher) with high-crystallinity and good electrical characteristic.Yet common resin substrate has the heating limit about 200 ℃, and even use the polyimides with high heat resistance, heating at most also is limited in about 400 ℃.Utilize aforesaid directly film forming board structure on organic substrate, be difficult to form the ceramic dielectric film that has the good electrical characteristic with respect to heat resistance.

And, the surface of organic resin substrate has the jog of several microns (μ m) orders of magnitude usually and has poor flatness, and form film (appearing at the lip-deep jog of resin substrate is the hundred times of film thickness) from the teeth outwards with about tens nanometers (nm) thickness, in this case, there is the problem that is easy to generate defective again.

On the other hand, the invention that illustrates among the JP-A-2002-271038 discloses a kind of hybrid multilayer substrate, and it is for the size and the thickness of the multilager base plate that reduces to comprise function element, and comprises different material areas on one deck.Yet for this substrate, needing will be stacked to form piece by the substrate that different materials constitutes, along the vertical direction of the bearing of trend of each substrate this piece is cut with the formation composite layer then, and described composite layer is stacked.Therefore, it is complicated that manufacture process becomes, and, between material area, will be provided with tack coat always.Therefore, with regard to packing density, still do not obtain a kind of structure that is enough to meet the demands.

On the other hand, also can suppose: in order to increase the packing density of substrate inside, and in substrate with forming a plurality of different functional material films (for example, dielectric film and magnetic film) in the one layer surface simply.As shown in figure 15, in the time will on the ceramic post sintering substrate, forming dissimilar material membranes 91 and 92, contact with each other or in lap 94, form conversion zone 95 at material during the substrate sintering, so that in material film 91 and 92, all be difficult to the electrical characteristic that obtains expecting.And, a problem also can appear, that is, because the difference between material 91 and 92 the two the percent thermal shrinkages, and cause easily producing the crack between two kinds of material membranes or rupturing 96.On the other hand, under the situation that these two kinds of functional material films form by organic material (resin), the bond strength of these two kinds of material membrane contact portions will be very little, can produce the gap between these two kinds of films, and the reliability of substrate is reduced.

Summary of the invention

Therefore, an object of the present invention is to obtain a kind of organic multilayer substrate and manufacture method thereof, described organic multilayer substrate can comprise the function element with good electrical characteristic with high density, and has high reliability.

In order to reach this purpose and to address the above problem, multilager base plate according to the present invention is by obtaining a plurality of substrates are stacked, and comprises multiple function element in it.Wherein, multiple functional material film is set on the same plane of at least one substrate, and multiple function element is formed by multiple functional material film, described multiple functional material film comprises the first functional material film and the second functional material film at least, and the described second functional material film is formed by second functional material different with the described first functional material film.

Be included in the step that multiple functional membrane is set in the same plane of internal layer central layer according to the manufacture method of multilager base plate of the present invention, wherein, described multilager base plate is included in the multiple function element of making in the substrate, and described multiple functional membrane comprises first functional membrane at least and is different from second functional membrane of first functional membrane.

In the same plane of the substrate that constitutes multilager base plate, the material membrane of the difference in functionality of expectation can be set, and can on the same plane of multilager base plate, form multiple different function element by the functional material film.Thereby, can increase the packing density of substrate.More particularly, for example, to have the material of low-k and have high dielectric constant materials and be arranged in the same plane of core material, form inductor at the area part that is provided with material, and be provided with area part formation capacitor with high dielectric constant materials with low-k.In addition, for example can in the same plane of substrate, selectable material be set suitably,, thereby in multilager base plate, comprise the function element of expectation such as dielectric material, magnetic material, piezoelectric, thermoelectric material or semi-conducting material.As function element, for example, can form capacitor, inductor, resistor, rheostat or other elements.

As the concrete grammar that the functional material film is set on substrate, can the application of thin embrane method (for example, molten sample method of sputtering method, vapour deposition method, CVD method, laser or sol/gel formed film sintering process) and thick film (for example, form the functional material film and by print process with scrape the skill in using a kitchen knife in cookery with its transfer printing).According to membrane process, in substrate, can form and have good electrical characteristic and high performance function element.On the other hand, according to the thick film of not using vacuum technique, can be with a simple process with the low cost manufacturing according to multilager base plate of the present invention.

And in multilager base plate according to the present invention, at least one capacitor element layer is set in this substrate.This capacitor element layer is formed by dielectric ceramic layer and two lip-deep electrode films being arranged in the dielectric ceramic layer, and by the base plate supports that mainly comprises resin, described dielectric ceramic layer is set up by membrane process and has the degree of crystallinity that is enhanced by heat treatment.

In such multilager base plate of the present invention, the dielectric ceramic layer that forms by membrane process is heat-treated to improve degree of crystallinity and to increase dielectric constant, it is by the base plate supports that mainly comprises resin then, and stacked to form multilager base plate.Therefore, can in substrate, form ceramic layer, and the capacitor with high capacitance can be set in the organic multilayer resin substrate with high-k.Particularly, for example,, as described in the following manufacture method that will illustrate, having formation dielectric ceramic layer on the transfer substrate of high heat resistance, and it is being heat-treated, then it is being transferred to the organic resin substrate for the dielectric ceramic layer is heat-treated.

Description of drawings

Fig. 1 is the horizontal sectional view of expression according to the multilager base plate (forming one deck of different kinds material film) of first embodiment of the invention.

Fig. 2 is the vertical cross-section diagram of expression according to the multilager base plate of first embodiment.

Fig. 3 (a) to 3 (o) be the sectional view of continuous representation according to the manufacture process of the multilager base plate of first embodiment.

Fig. 4 is the vertical cross-section diagram of expression according to the multilager base plate of second embodiment of the invention.

Fig. 5 is the vertical cross-section diagram of expression according to the decomposition of the multilager base plate of second embodiment.

Fig. 6 (a) to 6 (o) be the sectional view of continuous representation according to the manufacture process of the multilager base plate of second embodiment.

Fig. 7 is the horizontal sectional view of expression according to the multilager base plate (forming one deck of different kinds material film) of third embodiment of the invention.

Fig. 8 is the vertical cross-section diagram of expression according to the multilager base plate of the 3rd embodiment.

Fig. 9 is the horizontal sectional view of expression according to the multilager base plate (forming one deck of different kinds material film) of fourth embodiment of the invention.

Figure 10 is the vertical cross-section diagram of expression according to the multilager base plate of the 4th embodiment.

Figure 11 is the horizontal sectional view of expression according to the multilager base plate (forming the ground floor of different kinds material film) of fifth embodiment of the invention.

Figure 12 is the horizontal sectional view of expression according to the multilager base plate (forming the second layer of different kinds material film) of the 5th embodiment.

Figure 13 is the vertical cross-section diagram of expression according to the multilager base plate of the 5th embodiment.

Figure 14 (a) and 14 (b) are the sectional views of one deck of expression different kinds material film formed according to the present invention.

Figure 15 (a) and 15 (b) be the various material membranes of expression in the ceramic post sintering substrate, form on one deck situation the time, form the sectional view of that one deck of various material membranes.State before Figure 15 (a) expression sintering, the state behind Figure 15 (b) expression sintering.

Figure 16 (a) to 16 (k) be the sectional view of continuous representation according to the manufacture process in the multilager base plate manufacture method of sixth embodiment of the invention.

Figure 17 is the sectional view of expression according to an example of multilager base plate of the present invention.

Figure 18 (a) to 18 (n) be the sectional view of continuous representation manufacture process of the multilager base plate of an example according to the present invention.

Figure 19 (a) is the plane graph of expression according to an example of dielectric ceramic layer structure of the present invention, and Figure 19 (b) is a sectional view.

Figure 20 (a) is the plane graph of expression according to another example of dielectric ceramic layer structure of the present invention, and Figure 20 (b) is a sectional view.

Figure 21 is the BaTiO that expression forms by sputtering method ₃Film is at the X-ray diffractogram (not carrying out under the heat treated situation) of the state that takes out immediately after the sputter.

Figure 22 is the BaTiO that expression forms by sputtering method ₃The X-ray diffractogram of film under 300 ℃ of situations of heat-treating.

Figure 23 is the BaTiO that expression forms by sputter ₃The X-ray diffractogram of film under 500 ℃ of situations of heat-treating.

Figure 24 is the BaTiO that expression forms by sputter ₃The X-ray diffractogram of film under 700 ℃ of situations of heat-treating.

Figure 25 is expression BaTiO ₃The X-ray diffractogram of sintered article.

Embodiment

Below, specific embodiments of the invention will be described with reference to the accompanying drawings.

[first embodiment]

Fig. 1 and 2 represents the multilager base plate according to the embodiment of the invention.As illustrated in fig. 1 and 2, multilager base plate has a kind of like this structure: the film 11 and 12 that is formed by different materials is set in the same plane of substrate inside, has different types of function element such as the capacitor 13 of high capacitance and inductor 14 and is arranged on same one deck of substrate by film.

More particularly, in the present embodiment, high dielectric material film 11 forms by having high dielectric constant materials, as the first functional material film; Low k material film 12 is formed by the material with low-k, as the second functional material film.The electric conductor 15 of rectangular patterns and 15a are set on two surfaces of high dielectric material film 11, the capacitor 13 (first function element) that has high capacitance with formation, and have on the electric conductor 17 of spirality pattern and two surfaces that 17a is set at low k material film 12, to form inductor 14 (second function element).

In the high and low dielectric material film 11 and 12 each all is set to the film by using membrane process to form, and be set to have 5 μ m or littler thickness, described membrane process such as sputtering method, vapour deposition method, CVD method, the molten sample method of laser and sol/gel formed film sintering process.Under the situation that film is formed by resin or composite material, its dielectric constant is approximately 1 to 50, and dielectric loss angle tangent (tan δ) value is approximately 0.002 to 0.02, and described composite material obtains by ceramic material is mixed and is distributed in the resin.On the other hand, according to the film of present embodiment, may obtain being about 3～1000 dielectric constant and be about 0.001～0.1 tan δ value.

The example that can be used for forming the concrete material of dielectric material film 11 and 12 comprises barium titanate-type pottery, titanium-barium-neodymium type pottery, titanium-barium-Xi type pottery, lead-calcium type pottery, titanium dioxide ceramic, lead titanates type pottery, strontium titanates type pottery, calcium titanate type pottery, bismuth titanates type pottery, magnesium titanate type pottery, CaWO ₄Type pottery, Ba (Mg, Nb) O ₃Type pottery, Ba (Mg, Ta) O ₃Type pottery, Ba (Co, Mg, Nb) O ₃Type pottery and Ba (Co, Mg, Ta) O ₃The type pottery.

As for the functional material film that will in same plane, form, except aforesaid dielectric material film, various material membranes can be set, as by magnetic material (for example, Fe-Ni-Zn type pottery, Mn-Zn type ferrite, Ni-Zn type ferrite, Mn-Mg-Zn type ferrite, Ba type ferrite, Sr type ferrite, Ni-Cu-Zn type ferrite, iron oxide such as Fe ₂O ₃Or Fe ₃O ₄, Fe or comprise the various magnetic alloys of Fe), piezoelectric (for example, PbTiO _3-PbZrO ₃), thermoelectric material (for example, PbTiO ₃) and semi-conducting material (for example, BaTiO ₃) film that constitutes, can constitute by these films such as various function element such as capacitor, inductor, resistor and rheostats.

Can capacitor 5, grounding electrode 3, other function element and various wiring 4 be set for other layer of substrate.And the electrical connection between each layer of realizing being provided with these elements can suitably form through hole or via hole (not shown).Surface mounted component such as IC1 or various chip component 2 can be installed on the surface of substrate.Therefore, can form the electronic component modular of expectation.

For example, can constitute various electronic components according to the present invention, as coil, capacitor, antenna, BPF, LPF, HPF, synchro-duplexing device, duplexer, coupler, balanced-unbalanced transformer, line of time delay, antenna duplexer module, front-end module, power amplifier, VCO, PLL module, mixer module, IF module, isolator, DC-DC transducer or tuner unit.

Fig. 3 (a) to 3 (o) continuous representation according to the manufacture process of the multilager base plate of first embodiment.Based on these figure, provide explanation according to the multilager base plate manufacture process of present embodiment.

(1) at first, prepare transfer substrate 21 (Fig. 3 (a)), and on the surface of transfer substrate 21, form the metal film 22 (Fig. 3 (b)) that will become electrode for capacitors and inductor by membrane process.For example, SUS (stainless steel) substrate that will have 0.1mm thickness stacks gradually copper (Cu) and the nickel (Ni) that thickness is 0.1 μ m as transfer substrate 21 respectively by sputtering method on the surface of substrate, thereby forms metal film 22.

For transfer substrate 21,, for example can also use such as silicon, aluminium oxide, zirconium dioxide, quartz, sapphire, magnesium oxide or zirconic substrate except the SUS substrate.Preferably using heat resistance is 500 ℃ or the higher formed substrate of inorganic substrate.

On the other hand, for metal film 22, except copper and mickel, for example can also use titanium (Ti), gold (Au), silver (Ag), platinum (Pt), palladium (Pd), tungsten (W) or molybdenum (Mo) or comprise them at least the alloy of one of them, also can utilize various conductive materials with conductivity.

About the method that metal film 22 forms,, can also use vapour deposition method, CVD method, the molten sample method of laser, sol/gel film sintering process, galvanoplastic and above-mentioned additive method except sputtering method.In order to improve the reliability of substrate, preferably use dry method such as sputtering method, vapour deposition method or CVD method, it can form more smooth metal film.According to these dry film forming processes, can prevent to generate such as jogs such as electrolytic metal paper tinsels, especially when forming the comparative electrode of capacitor, it can prevent to produce the electric field concentration of local, thereby improves the reliability of substrate.

(2) next, form high dielectric material film 11 (Fig. 3 (c)) in the zone that will form capacitor of metal film 22 as the first functional material film.By the surface that mask covers the metal film except the zone that will form capacitor is set, carry out the shaping of high dielectric material film 11 by membrane process such as sputtering method.For example, be the barium titanate film of 0.3 μ m can on metal film 22, forming thickness by the RF sputtering method under 600 ℃ the heating condition, thereby can access high dielectric material film 11.

And, after forming film 11, also can heat-treat to improve degree of crystallinity film 11.Preferably, should heat treatment temperature be set to equal 400 ℃ or higher temperature (for example, 500 ℃ to 900 ℃).Thereby, can form dielectric layer with stable crystal structure and good dielectric property.Although crystal habit preferably should have mono-crystalline structures (can obtain better dielectric property by it), also can use polycrystalline structure.Functional material film according to the present invention is not to be defined to the film with crystal structure always, but comprises amorphous film yet.

(3) subsequently, form low k material film 12 (Fig. 3 (d)) in the zone that will form inductor of metal film 22 as the second functional material film.By the surface that mask covers the metal film except the zone that will form inductor is set, carry out the shaping of low k material film 12 by membrane process such as sputtering method.For example, be the Al of 0.3 μ m can on metal film 22, forming thickness by sputtering method under 600 ℃ the heating condition ₂O ₃(aluminium oxide) film, and can it be set to low k material film 12.Before low k material film formed, in order to keep insulation property, for example, can form thickness on metal film 22 by sputtering method was the SiO of 0.2 μ m ₂, and can form low k material film 12 thereon.

(4) after each high and low dielectric material film 11 and 12 forms, on film 11 and 12, be provided for forming the metal film 22a (Fig. 3 (e)) of electrode for capacitors and inductor by membrane process such as sputtering method.

(5) then, make metal film 22a form pattern by etching to form rectangular patterns that will become electrode for capacitors and the spiral pattern (Fig. 3 (f)) that will become inductor.Wet etching and dry ecthing can both be used for pattern-forming.

(6) behind pattern-forming, be inverted transfer substrate 21, and in to prepreg (being in the organic resin substrate of B scalariform attitude) 23 pressurized, heated, impress processing to carry out transfer printing (Fig. 3 (g)).After prepreg 23 solidifies, transfer substrate 21 is peeled off (Fig. 3 (h)).Replace the use of prepreg, also can impress by means of other adhesive films and be in the just resin substrate in solid state, thereby realize transfer printing, described other adhesive films are inserted between a plurality of resin substrates.

For improving the reliability of substrate, preferably, the organic resin substrate (prepreg) that will be transferred should have low water absorption.More particularly, can utilize thermoplastic resin and thermosetting resin, for example can use epoxy resin, phenolic resins, vinyl benzyl ether compound, Bismaleimide Triazine, polyolefin-type resin, polyimides, polyester, polyphenylene oxide, polyphenylene sulfide, liquid crystal polymer, fluorine type resin and comprise one resin in them at least.

(7) peel off transfer substrate 21 after, to initial formation cover high dielectric material film 11 and low k material film 12 lip-deep metal films 22 carry out pattern-forming.More particularly, aim at, form the comparative electrode and the inductor (Fig. 3 (i)) of capacitor respectively with electrode for capacitors that forms by pattern-forming and inductor (metal film 22a) (Fig. 3 (f)).

(8) after metal film 22 formed patterns, the metal forming 24 and 25 with resin was extruded and adheres on two surfaces of substrate (Fig. 3 (j)).

(9) then, Copper Foil 24a on the etch table surface layer is to form in order to generate the hole (Fig. 3 (k)) of laser via hole, laser beam irradiation above it in the resin part 24b of metal forming 24, to form hole (Fig. 3 (l)) with resin, then carry out electroless plating and electrolysis plating so that metal film 27 to be set, form via hole 28 (Fig. 3 (m)) thus.

(10) after via hole 28 forms, make the metal forming 24 and 25 with resin form pattern (Fig. 3 (n)) on two surfaces by etching, then, the metal forming 26 and 29 with resin is extruded and adheres to (Fig. 3 (o)) on two surfaces.

Subsequently, can arrive (10) (Fig. 3 (j) is to 3 (o)), form the multilager base plate according to present embodiment shown in Figure 2 by the step (8) that repeats to be commonly called the addition method.

Shown in Fig. 3 (j), will in stacked step (Fig. 3 (j)), can comprise single membrane material at grade by another stacked substrate.Certainly, can on the formed same plane of Fig. 3 (i) step, kinds of materials be set, and can a plurality of substrates that comprise the kinds of materials film are stacked.

And, for the functional membrane that will form at grade, for example, the material with low-k also can be set and have high dielectric constant materials to form inductor and capacitor at grade; Various materials such as piezoelectric (for example, PbTiO perhaps is set ₃-PbZrO ₃), thermoelectric material (for example, PbTiO ₃) and semi-conducting material (for example, BaTiO ₃), and utilize these materials on layer of surface, to form various function element.In addition, though be provided with two kinds of film formation materials in the present embodiment at grade, also can on conplane zones of different, form three kinds or more kinds of material (functional membrane) in the same manner.

Can be installed in such as the surface mounted component of IC and various chip components etc. on the surface of multilager base plate of such formation.And, in order to realize the electrical connection between each layer in the same substrate, can suitably form through hole or via hole (not shown).

[second embodiment]

Figure 4 and 5 are represented the multilager base plate according to second embodiment of the invention.As shown in these figures, multilager base plate comprises four layers, wherein, core material 31 and another substrate 35 combine with the prepreg 39 that inserts in the middle of them, bare chip 7 can be mounted in the flip-chip on the substrate surface, described core material 31 comprises different kinds material film 11 and 12 on one surface, comprise the electric conductor pattern 32 that is used to install bare chip on another surface; Described substrate 35 comprises wiring pattern 36 on one surface, comprise grounding pattern 37 and welding disk pattern 38 on another surface.

Core material 31 with different kinds material film has in one surface (lower surface) goes up formed high dielectric material film 11 (the first functional material film) and low k material film 12 (the second functional material film), form capacitor 13 by film 11 in the high dielectric material film portion with high capacitance, in addition, partly form capacitor 43 and inductor 14 at low k material film with low electric capacity.In the present embodiment, pay the utmost attention to reducing of thickness, also form by thin film dielectrics so have the capacitor 43 of low electric capacity (low-k).And, on another surface of core material 31 (upper surface), be formed for the electric conductor pattern 32 of the naked installation of little spacing.

To 6 (o), provide specifying based on Fig. 6 (a) according to the manufacture process of the multilager base plate of second embodiment.

(1) at first, prepare transfer substrate 21 (Fig. 6 (a)), and form metal film 22 by membrane process on the surface of transfer substrate 21, this metal film 22 will be as electrode for capacitors or inductor lead (Fig. 6 (b)).For transfer substrate 21, for example use stainless steel substrate, and on substrate surface, form copper (Cu) film and titanium (Ti) film successively by sputtering method with high heat resistance.About the type of transfer substrate 21 and metal film 22 and the membrane process that can use, identical with mode described in first embodiment, can use other all kinds and method.

(2) after metal film 22 forms, high dielectric material film 11 (Fig. 6 (c)) is set in the zone that will form the capacitor with high capacitance of film 22.Cover metallic film surface except the zone that will form capacitor with mask, realize the formation of film by membrane process such as sputtering method with high capacitance.After film forms, for the degree of crystallinity that improves film 11 can be heat-treated.

(3) next, form low k material film 12 (Fig. 6 (d)) in the zone that will form inductor and capacitor of metal film 22 with low electric capacity.Its generation type is identical with the generation type of film 11, covers except forming inductor and having metallic film surface the zone of capacitor of low electric capacity with mask, realizes the formation of film by membrane process such as sputtering method.

(4) then, the formation metal film 22a (Fig. 6 (e)) on film 11 and 12 by membrane process such as sputtering method.Metal film 22a is by stacking gradually Ti and Cu forms.

, by etching make metal film 22a form pattern, to form electrode for capacitors and inductor (Fig. 6 (f)) (5) thereafter.

(6) on the other hand, in order to form the meticulous electric conductor pattern that bare chip is installed that is used on another surface (upper surface) that is arranged on core material 31, preparation transfer substrate 21a (Fig. 6 (g)) forms metal film 32 (Fig. 6 (h)) by membrane process then on the surface of transfer substrate separately.For transfer substrate 21a, for example use stainless steel substrate with high heat resistance, on the surface of substrate 21a, form Cu film and Ti film successively by membrane process such as sputtering method.

(7) after film forms, make metal film form pattern, to be formed for the electric conductor pattern 32 that bare chip is installed by etching (Fig. 6 (i)).

(8) then, transfer substrate 21a and transfer substrate 21 form the so toward each other mode in surface with pattern and are provided with, prepreg 40 is arranged on (Fig. 6 (j)) between transfer substrate 21 and the 21a, heated substrates 21 and 21a and they are stamped in respectively on the upper and lower surface of prepreg 40 (Fig. 6 (k)) then, described transfer substrate 21a is provided with and is used for the electric conductor pattern 32 that bare chip is installed, and described transfer substrate 21 has the metal film 22a (Fig. 6 (f)) that forms pattern.

(9) after prepreg 40 solidified, transfer substrate 21 and 21a all were stripped from, thereby, comprise the kinds of materials film 11 and 12 and be used for the electric conductor 32 that bare chip installs and be transferred to prepreg 40 (Fig. 6 (l)) of electric conductor 22 and 22a.

(10) finish transfer printing after; in order to protect fine pattern 32; the electric conductor that will be used for the bare chip installation forms the surface and scribbles resist layer 55 (Fig. 6 (m)); thereafter, (Fig. 6 (b)) carries out pattern-forming on the lip-deep metal film 22 that forms and cover high and low dielectric material film 11 and 12 at first.More particularly, aim at, form the comparative electrode and the inductor (Fig. 6 (n)) of capacitor respectively with electrode for capacitors that forms by pattern-forming and inductor (electric conductor 22a) (Fig. 6 (f)).

(11) after metal film 22 forms pattern, remove the resist layer 55 (Fig. 6 (o)) that covers on the fine pattern 32, thereby finish the preparation of core material 31.

(12) subsequently, substrate 31 is set to core material so that each substrate is stacked.More particularly, independent another substrate 35 that generates, it comprises wiring pattern 36, grounding pattern 37 and welding disk pattern 38 (see figure 5)s respectively on the surface and the back side, and substrate 35 and completed core material 31 are bonded to each other by means of inserting the prepreg 39 between them.And bare chip 7 is mounted in the flip-chip on the fine pattern electric conductor 32 on core material 31 surfaces.

Present embodiment according to using transfer printing can carry out pattern-forming with very little spacing.Reason is: according to transfer printing, have conductivity (for example, using stainless steel substrate) by making transfer substrate, can use to add fully and handle (fully additive process).Therefore, do not need to use electroless plating or the soft etching just can be with the very fine pattern-forming of done with high accuracy.

For extensive bare chip being installed with the flip-chip method, also need be for real estate with very closely spaced pattern-forming.Reason is: extensive bare chip has a large amount of terminals and these terminals with little spacing arrangement.According to the multilager base plate that comprises very fine conductive pattern of present embodiment, also can adapt with the installation of such extensive bare chip.

[the 3rd embodiment]

Fig. 7 and 8 expressions are according to the multilager base plate of third embodiment of the invention.Though in first and second embodiment, same one deck at substrate is provided with two kinds of kinds of materials films (high dielectric material film and low k material film), but as shown in Figure 7, except high dielectric material film 11 (the first functional material film) and low k material film 12 (the second functional material film),---film of magnetic thin film 61 (the 3rd functional material film) and the ceramic semiconductors material formation---semiconductive thin film 62 (the 4th functional material film) that also is provided with the film that magnetic material constitutes, like this, four kinds of functional material films on according to the same layer of surface in the substrate of present embodiment, have been formed altogether.

Then, adjoin high dielectric material film 11 and low k material film 12 and rectangular patterns electric conductor 15 and spirality pattern electric conductor 17 are set, therefore, form capacitor 13 (first function element) and inductor 14 (second function element) respectively in mode same as the previously described embodiments with high capacitance.And, in the present embodiment, spirality pattern electric conductor 17 is set to form impedor 65 (the 3rd function element) on two surfaces of magnetic thin film 61, in addition, rectangular patterns electric conductor 15 is set on two surfaces of semiconductive thin film 62 to form rheostat 66 (the 4th function element).

About being used to form the material of magnetic thin film 61, for example can use Fe-Ni-Zn type pottery, Mn-Zn type ferrite, Ni-Zn type ferrite, Mn-Mg-Zn type ferrite, Ba type ferrite, Sr type ferrite, Ni-Cu-Zn type ferrite, iron oxide such as Fe ₂O ₃Or Fe ₃O ₄, Fe or comprise the various magnetic alloys of Fe.In addition, BaTiO for example ₃Can be as the material that forms semiconductive thin film 62.

Like this, in the present invention, can be provided with quantity can select () kinds of materials film for example, 3 kinds, 4 kinds or more kinds of, thus form multiple (for example, 3 kinds, 4 kinds or more kinds of) function element.

In the present embodiment, except the one deck that is provided with different types of functional material film, on other layers, can form grounding electrode 3, wiring 4, capacitor 5 and other function element, and, various surface mounted components 1 with 2 can with first embodiment in identical mode be installed on the substrate surface.In addition, for according to each multilager base plate among present embodiment and following the 4th and the 5th embodiment that will illustrate, because its concrete manufacture method (process) is identical with manufacture method (process) according to the multilager base plate of first embodiment, therefore, will omit its explanation.

[the 4th embodiment]

Fig. 9 and 10 expressions are according to the multilager base plate of fourth embodiment of the invention.As shown in figure 10, multilager base plate comprises a plurality of such layers: promptly, be provided with the kinds of materials film at grade.Though have only one deck to be provided with the kinds of materials film in first to three embodiment, as present embodiment, the number of plies that will form the different kinds material film thereon can be two, three or more.

Identical with the mode of the 3rd embodiment, each layer that will form the different kinds material film thereon all has high dielectric material film 11, low k material film 12, magnetic thin film 61 and semiconductive thin film 62, and comprises the rectangular patterns electric conductor 15 that is used for electrode for capacitors, the spirality pattern electric conductor 17 that is used for inductor, the spirality pattern electric conductor 17 that is used for impedor respectively and be used for rheostatic rectangular patterns electric conductor 15 on two surfaces of each film.In addition, Fig. 9 and 10 and below among the Figure 11 to 13 that will illustrate, have identical reference number with identical or corresponding part among each embodiment (Fig. 1 to 8), and will the repetitive description thereof will be omitted.

[the 5th embodiment]

Figure 11 to 13 expression is according to the multilager base plate of fifth embodiment of the invention.Shown in Figure 11 to 13, multilager base plate is equipped with so two-layer: promptly, with the 4th embodiment in identical mode arrange the kinds of materials film in the above.For the ground floor in these layers (Figure 11), each functional material film forms by membrane process.For the second layer (Figure 12), each functional material film forms by thick film.

As shown in figure 11, ground floor is provided with high dielectric material film 11 and semiconductive thin film 62, and rectangular patterns electric conductor 15 is set on two surfaces of film 11 and 62, to form a plurality of capacitor 13 and a plurality of rheostats 66 with high capacitance respectively.On the other hand, as shown in figure 12, the second layer is provided with the thick film that formed by resistor material (promptly, resistor material thick film 71) and the thick film that forms by magnetic material (promptly, magnetic thick film 61a), the spirality pattern electric conductor 17 that is used for the rectangular patterns electric conductor 15 of resistor and is used for impedor is separately positioned on two surfaces of thick film 71 and 61a, to form resistor 72 and impedor 65.

For the formation of thick film 71 and 61a, for example, can utilize the transfer printing of the known traditionally PET film of use.More particularly, magnetic or resistor powder mixed with resin material prepare composite material, again composite material is coated onto and lives through on the PET film that silicon handles by scraping the skill in using a kitchen knife in cookery.Then, film is bonded on the resin substrate, like this heating and pressurizing scheduled time, film is peeled off to carry out transfer printing then.In transfer printing, can and form thick film in the desired region transfer printing by covering resin substrate.

According to multilager base plate, in this substrate, a plurality of different functional material films are set on one layer surface according to the foregoing description.The function element of expectation can be set in substrate with high density subsequently.And, can on organic substrate, form functional material with high-crystallinity and good electrical characteristic, for example dielectric material, magnetic material, piezoelectric and thermoelectric material, and the electrical characteristic that is difficult to realize usually on organic substrate can realize in multilager base plate.In addition, can with can the thick film of one deck attenuation be combined with low cost to form the kinds of materials film at grade.Therefore, can reduce the manufacturing cost of multilager base plate.And, as shown in figure 14, be different from the situation that will form kinds of materials film (Figure 15) on the same one deck in the ceramic post sintering substrate, can prevent that the boundary member 94 between kinds of materials film 91 and 92 from producing crack 96.Therefore, the possibility that does not have the reliability that may reduce substrate.

Among the present invention, multiple functional material film can be formed by inorganic material.In this case, preferably the thickness of film is set to be equal to or less than 5 μ m.

Reason is as follows: in the inorganic material film of thickness greater than 5 μ m, such problem appears easily, that is, the flexible obvious reduction of film self, film can break (crack occurring) in the substrate manufacture process.And, will form at dielectric layer under the situation of functional material film, for the capacitor with high capacitance is set, preferably the thickness of film is set to 5 μ m or littler.Further, in this case, as the lower limit of functional material film (dielectric layer) thickness, preferably, the thickness of film is set to be equal to or greater than 0.1 μ m.This is in order to keep the breakdown voltage characteristics of film.

In addition, multiple functional material film can be to be transferred to film on the substrate by membrane process after forming on the transfer substrate.

Like this,,, just can heat-treat, thereby improve degree of crystallinity this film in case can stand to form film on the transfer substrate of high-temperature heat treatment by utilizing transfer printing.Therefore, for the organic resin substrate that does not have enough heat resistances, the functional material film with good electrical characteristic can be set, and form function element by this film in the same manner.

Among the present invention, have at least a kind of by heat treatment and have degree of crystallinity in the multiple functional material film.

It for example is 500 ℃ to 900 ℃ that heat treatment temperature is set to.Therefore, can form dielectric layer with stable crystal structure and good dielectric property.

Multiple functional material film is formed by aforesaid material, for example dielectric material, magnetic material, piezoelectric, thermoelectric material and semi-conducting material.

And, in multilager base plate according to the present invention, obtain composite material in the resin by functional powders is mixed and is distributed to, and form multiple functional material film by composite material.

For example, any one all can be used as functional powders in dielectric material, magnetic material, piezoelectric, thermoelectric material and the semi-conducting material.

And the substrate that is provided with multiple functional material film mainly comprises resin." substrate that mainly comprises resin " is except the substrate that only is made of resin material, also comprise the substrate that forms by composite material, described composite material is by being mixed into resin with various inorganic material (for example, dielectric material, magnetic material, piezoelectric, thermoelectric material and semi-conducting material) and obtaining.

In addition, in multilager base plate according to the present invention, under some situation, have at least a substrate that comprises multiple function element and another substrate stacked as a whole by means of inserting binding material (comprising prepreg and bonding sheet) between them.

And electronic component according to the present invention is installed in surface mounted component on any at least one surface in the multilager base plate.

The present invention is not limited to illustrated with reference to the accompanying drawings embodiment, but for being familiar with those skilled in the art, it is apparent that, can make various distortion in the illustrated scope of claims.

[the 6th embodiment]

Figure 16 (a) is to the manufacture method of 16 (k) expression according to the multilager base plate of sixth embodiment of the invention.In the embodiment shown in these figure, by using thick film kinds of materials film (magnetic film and dielectric film) is arranged on same one deck of multilager base plate, thereby in same plane, forms different types of function element (impedor and capacitor).

(1) at first, preparation transfer substrate 151 (Figure 16 (a)), and dry film 152 is bonded on the surface of transfer substrate 151 (Figure 16 (b)), in order to form predetermined spiral pattern that is used for impedor and the rectangular patterns that is used for electrode for capacitors, utilize mask to make film 152 carry out pattern-forming, thereby form resist pattern (Figure 16 (c)) by photoengraving.

For example, with thickness is that the SUS304 tension Annealing member with passivated surface of 0.1mm is cut into the size that 100mm is long, 100mm is wide, with preparation transfer substrate 151, and be that the dry film 152 of 29 μ m pastes on it with thickness, and on the whole zone of the long 90mm of film 152, wide 90mm, form a spirality pattern that is used for impedor (with live width and be set to 30 μ m/30 μ m) and a plurality of rectangular patterns (each rectangular patterns has 4.5mm and grows and the wide size of 3.2mm) that is used for electrode for capacitors, form resist pattern 153 thus.

(2) next, for example, on the surface of the transfer substrate 151 that is provided with resist pattern 153, carry out gloss copper sulphate and electroplate, thereby form metallic conductor 155 (Figure 16 (d)).The composition of electroplate liquid can be set to for example have the cupric sulfate pentahydrate of 200g/l and the sulfuric acid of 100g/l during copper sulphate was electroplated.

(3) subsequently, remove resist pattern 153 (Figure 16 (e)).For example, by 5% sodium hydroxide solution is heated to 50 ℃, and with 1.5kg/cm ²Pressure is ejected into it on surface that is formed with pattern one side of transfer substrate 151, just can remove resist pattern 153.After the resist pattern is removed, for example, makes the surface of electric conductor stand blackout with the mixed solution of clorox and NaOH and handle, then by convection formula drying box with substrate 151 100 ℃ dry 30 minutes down.

(4) then, be inverted transfer substrate 151, it is carried out the vacuum impression and is transferred to (Figure 16 (f)) on the prepreg 156, thereafter, peel off transfer substrate 151, to make the core material 157 (Figure 16 (g)) that forms the electric conductor pattern thereon.And, at least also to make the core material 157 that another has the electric conductor that forms pattern, in order to using (Figure 16 (j)) in the stickup step that will illustrate below.For resin substrate (core material) 156, can use the various materials identical with material described in first embodiment as the transfer printing target.For example, the prepreg with cloth of 100 μ m thickness can be used in resin substrate 156.

(5) on the other hand, on core material 157, different kinds material is set with the electric conductor that forms pattern.Therefore, various functional powders sneaked into and be distributed to prepare composite material in the resin material, and with it as functional material.For example, in order to form first functional membrane, the amount (volume ratio) of magnetic (for example, Fe-Ni-Zn type pottery) with 40% is mixed in the resin material to form magnetic composite, and composite material is coated onto on the PET film, thereby has the thickness of 10 μ m by scraping the skill in using a kitchen knife in cookery.Similarly, in order to form second functional membrane, for example, the amount (volume ratio) of dielectric powder (for example, Ba-Ti-Nd type pottery) with 40% is mixed in the resin material, thereby generates dielectric composite material, and by scraping the skill in using a kitchen knife in cookery composite material is coated onto on the PET film, for example be the thickness of 10 μ m to have.In ensuing transfer step (Figure 16 (h) is to 16 (i)),, preferably should make the PET film stand silicon in advance and handle for improving stripping performance.For resin material, it preferably should mainly comprise employed resin in the core material.

As the dielectric powder that generates dielectric composite material, except that Ba-Ti-Nd type pottery, it can use the various ceramic materials described in first embodiment.And, as the magnetic that generates magnetic composite, except that Fe-Ni-Zn type pottery, it can use for example Fe of Mn-Zn type ferrite, Ni-Zn type ferrite, Mn-Mg-Zn type ferrite, Ba type ferrite, Sr type ferrite, Ni-Cu-Zn type ferrite, iron oxide ₂O ₃Or Fe ₃O ₄, Fe and the various magnetic alloy that comprises Fe.

(6) then, cover core material 157, and the PET film that will have a magnetic composite that is applied to wherein adheres on the substrate 157,, thereafter, peel off the PET film their heating and pressurizing scheduled times with the electric conductor that forms pattern with mask.Therefore, magnetic film 161 can be transferred to the first area as first functional membrane, in described first area, will form magnetosphere (Figure 16 (h)) on the surface of core material.

(7) in addition, cover core material 157, and the PET film that will have a dielectric composite material that is applied to wherein adheres on the substrate 157,, thereafter, peel off the PET film their heating and pressurizing scheduled times with the electric conductor that forms pattern with another mask.Therefore, dielectric film 162 can be transferred to second area as second functional membrane, in described second area, will form dielectric layer (Figure 16 (i)) on the surface of core material.

The transfer printing order of magnetic film 161 and dielectric film 162 can be put upside down.As for the material of the functional membrane that will on core material, form, except above-mentioned dielectric material and magnetic material, also can use piezoelectric (for example, by with PbTiO ₃-PbZrO ₃Mix and be distributed in the resin material and the composite material that obtains), thermoelectric material is (for example, by with PbTiO ₃Mix and be distributed in the resin material and the composite material that obtains), semi-conducting material is (for example, by with BaTiO ₃Mix and be distributed in the resin material and the composite material that obtains) and other materials, and can form various functional membranes by these materials.And, also can form three kinds or more kinds of material (functional membrane) in conplane zones of different.

(8) magnetic film 161 and dielectric film 162 are transferred on the core material 157, will have equally above substrate 157a that electric conductor but independently forms is placed on substrate 157 then, and hot pressing is so that two substrates 157 and 157a (Figure 16 (j)) bonded to one another.At this moment, magnetic film 161 and dielectric film 162 have been realized the function of prepreg, and two substrates 157 and 157a combination there.And, when substrate 157 and 157a will overlap each other, the electric conductor of magnetic film 161 and dielectric film two substrates 157 of 162 insertions and 157a is formed between the surface, and further, aim in such a way: promptly, the capacitor comparative electrode can be formed by metallic conductor 155 and 155a, and described metallic conductor is arranged on the formation part of dielectric film 162.

(9) in addition, make the substrate 158 of a plurality of such bondings, and by means of inserting prepreg 166 (or bonding sheet) between them with a plurality of substrate 158 overlapping and extruding, thereby multilager base plate (Figure 16 (k)) formed.At this moment, will stacked substrate be not limited to substrate 158 according to having of present embodiment different types of (multiple) functional membrane, but also can comprise substrate 159 with a kind of functional membrane 165, and by suitably in conjunction with selecting the substrate of number, can constitute various multilager base plates.And, for the formation method of functional membrane, used thick film in a second embodiment, in first embodiment, used membrane process, also thick film and membrane process can be combined the formation film.For example, can first functional membrane be set enough membrane processes at grade, form second functional membrane with thick film.In this case, in order to keep the adhesive property between substrate, prepreg or bonding sheet are set in film portion preferably.

Manufacture method according to according to the multilager base plate of present embodiment can be provided with a plurality of different functional material films on the same plane of substrate, can comprise the function element with good electrical characteristic of expectation in substrate with high density.In addition, do not need complicated step, just can originally when high temperature (500 to 900 ℃), stand the organic film material of film shaping processing and be arranged to the structure identical with the organic material that hangs down heat resistance.And each layer all stood to use the hot-pressing processing in the conventional method of the metal forming with resin.Yet,, can carry out pressing (Figure 16 (j) and 16 (k)) to base component integral body according to present embodiment.Therefore, be possible with less step and low-cost manufacturing multilayer board.

As mentioned above, manufacture method according to the present invention comprises by membrane process and the step of multiple functional membrane is set on transfer substrate and multiple functional membrane is transferred to the step of core material.

Like this, by utilizing transfer printing,, just this film can be transferred on the core material in case can form film having on the transfer substrate of high heat resistance.Therefore, for the organic resin substrate that does not have enough heat resistances, can form functional membrane and form function element by this film with good electrical characteristic.

For in the multiple functional membrane each, multiple functional membrane can be arranged on the transfer substrate carry out mask on the transfer substrate on transfer substrate by repeating so that the step of functional membrane to be set.In the present invention, also multiple functional membrane can be set simultaneously on transfer substrate.

And transfer step comprises: in to the transfer substrate surface heating and pressurizing that is provided with functional membrane, push this surface with respect to prepreg, thereby make the prepreg step of curing; And the step of peeling off transfer substrate.

In addition, following steps are set: before the step of multiple functional membrane is set, metal film is set, or/and after the step of multiple functional membrane is set, metal film is set.

And among the present invention, multiple functional membrane is formed by composite material, and is set on the support membrane, is transferred to then on the core material, and described composite material obtains by various functional powders are mixed and are distributed in the resin material.

In this case, metal film can be arranged on the core material.

And, under functional membrane is set at situation on the core material,, repeat such step: promptly, carrying out mask on the core material on core material so that functional membrane to be set in the multiple functional membrane each.Among the present invention, also can on core material, arrange multiple functional membrane simultaneously.

Functional membrane can be any one in dielectric film, magnetic film, piezoelectric film, pyroelectric film and the semiconductor film.

And, manufacture method according to multilager base plate of the present invention comprises such step: promptly, at least one is comprised that the core material of multiple functional membrane and another core material are stacked as a whole by means of inserting binding material (comprising prepreg) between them.

In addition, according to the manufacture method of electronic component of the present invention further comprise in any method of making multilager base plate each step and at least one surface of multilager base plate the step of installation surface installation elements.

The present invention is not limited to illustrated with reference to the accompanying drawings embodiment, but for being familiar with those skilled in the art, it is apparent that, can make various distortion in the illustrated scope of claims.

[the 7th embodiment]

Below, the Figure 17 to 25 is with reference to the accompanying drawings illustrated one embodiment of the present of invention (hereinafter being referred to as present embodiment).

As shown in figure 17, multilager base plate according to present embodiment comprises dielectric ceramic film 211, the electrode film 212 and 213 that is formed by membrane process, described electrode film is set on two surfaces of dielectric film 211 to form by baseplate material (organic insulating material) 215 and 216 capacitors that supported, and described baseplate material mainly comprises resin.

Particularly, in order in multilager base plate, to form dielectric ceramic layer 211, form dielectric film having on the transfer substrate of heat resistance, and it is heat-treated to improve its degree of crystallinity, then it is transferred to resin substrate.To this process be described in more detail to 18 (n) with reference to Figure 18 (a).

(1) at first, preparation transfer substrate 231 (Figure 18 (a)) forms the metal film 212 (Figure 18 (b) and 18 (c)) that will become electrode on the surface of transfer substrate 231 by membrane process such as sputtering method.At this moment, can be with the substrate that forms by inorganic substrate as transfer substrate 231 with 500 ℃ or higher heat resistance.For example, can use such as silicon, SUS (stainless steel), aluminium oxide, zirconium dioxide, quartz, sapphire, magnesium oxide or zirconic substrate.

For the metal electrode film, can use conductive material with conductivity, for example, copper (Cu), titanium (Ti), nickel (Ni), gold (Au), silver (Ag), platinum (pt), palladium (Pd), tungsten (W), molybdenum (Mo) and the alloy of one of them that comprises them at least, and can use arbitrary type.In the present embodiment, as optimal way, the electrode film that will form is set to have double-decker, at first on the surface of transfer substrate 231, form Pt film 212a, form the Ti film 212b that the dielectric ceramic layer is had high adhesion force more in the above, described Pt film has good heat resistance and can reduce impedance in heat treatment.

As the method that forms electrode film,, can use vapour deposition method, CVD method, the molten sample method of laser, sol/gel formed film sintering process, galvanoplastic and additive method except sputtering method.In order to improve the reliability of substrate/module, preferably use dry method such as sputtering method, vapour deposition method or CVD method, it can form more smooth metal film.Different with the electrolytic metal paper tinsel, according to these dry film forming methods, can prevent to produce jog.Therefore, when electrode film is used as the comparative electrode of capacitor, can prevent to produce the electric field concentration of local.

(2) next, on electrode film 212, form dielectric ceramic layer 211 (Figure 18 (d)) by membrane process such as sputtering method, vapour deposition method, CVD method, the molten sample method of laser or sol/gel formed film sintering process.Material as forming dielectric ceramic layer 211 for example can use the barium titanate-type pottery.In addition, can be by titanium-barium-neodymium type pottery, titanium-barium-Xi type pottery, lead-calcium type pottery, titanium dioxide ceramic, lead titanates type pottery, strontium titanates type pottery, calcium titanate type pottery, bismuth titanates type pottery, magnesium titanate type pottery, CaWO ₄Type pottery, Ba (Mg, Nb) O ₃Type pottery, Ba (Mg, Ta) O ₃Type pottery, Ba (Co, Mg, Nb) O ₃Type pottery or Ba (Co, Mg, Ta) O ₃The type pottery forms dielectric ceramic layer 211.

In order to keep breakdown voltage characteristics, thickness that preferably should dielectric ceramic layer 211 is set to be equal to or greater than 0.1 μ m, and in order to form the capacitor with high capacitance, thickness that preferably should dielectric ceramic layer 211 is set to be equal to or less than 5 μ m.And in the ceramic dielectric film of thickness greater than 5 μ m, easily the problem that occurs is: during the substrate transfer printing, the flexible meeting of film self obviously reduces and film self can break in manufacture process, and this is not preferred.

(3) after dielectric ceramic layer 211 forms, layer 211 by heat treatment to improve its degree of crystallinity.Preferably, heat treatment temperature should be set to 500 ℃ to 900 ℃.Therefore, can form dielectric ceramic layer with stable crystal structure and good dielectric property.About crystal structure, preferably should improve degree of crystallinity in order to obtain better dielectric property, and the amplitude difference of perovskite crest should be clearly seen preferably, shown in Figure 23 and 24.

Dielectric constant under the situation that the barium titanate film that following table 1 expression forms by sputtering method is not heat-treated and the situation of heat-treating with different temperatures, Figure 21 to 25 is its X-ray diffractograms.Can see significantly from table and figure, shown in Figure 21 (not heat treatment) or Figure 22 (heat-treating at 300 ℃), the barium titanate compound has low-down degree of crystallinity, shown in Figure 23 and 24, be enhanced by its degree of crystallinity of heat treatment, and it shows perovskite structure clearly.Owing to improved degree of crystallinity by heat treatment, by 500 ℃ or above heat-treating under the situation that improves degree of crystallinity, the DIELECTRIC CONSTANT of barium titanate film 20 to 30 brings up to 200 or higher suddenly when film forms.

[table 1]

BaTiO by sputtering method formation ₃The dielectric property of film

Sequence number	Heat treatment temperature	Dielectric constant (100KHz)	XRD
				1	There is not (directly measuring after the sputter)	27.8	Figure 21
2	300℃	32.8	Figure 22
				3	400℃	38.2
4	500℃	298.0	Figure 23
				5	700℃	334.5	Figure 24
6	800℃	375.5
				7	900℃	394.1
8	1000℃	Do not measure (because the influence that thermal dilation difference caused causes it to peel off from the electrode of substrate medium)
				Sintered article	1300 ℃ (sintering)		Figure 25

(4) after the heat treatment, on dielectric ceramic layer 211, form electrode film 213 (Figure 18 (e) and 18 (f)).Identical with the mode that forms electrode film 212 among Figure 18 (b) and 18 (c), electrode film 213 has double-decker: at first form Ti film 213b on dielectric ceramic layer 211, form Cu film 213a more in the above.With respect to the Pt electrode film that before provided, Cu has such advantage: promptly, resistance is littler, cost is lower.Yet directly the electrode film that forms on transfer substrate will stand heat treatment step.For this reason, the Pt film that thermal endurance and non-oxidizability are fabulous is more suitable.Therefore, concerning the electrode film that will on two faces that insert dielectric medium therebetween, form, preferably use different materials.Example as another combination, preferably: the electrode film 212a that will directly form on transfer substrate should form by having dystectic electrode material, and electrode film 213a should pick out from the combination with low-resistance cheap electrode material, and described combination for example is Ni-Ti/Ag-Ti (being used as the Ni electrode film 212a of electrode film 212 and Ag electrode film 213a and the Ti electrode film 213b that Ti electrode film 212b/ is used as electrode film 213).

(5) after electrode film 213 forms, make electrode film 213a and 213b form pattern (Figure 18 (g) and 18 (h)) by etching.Wet etching and dry ecthing can both be applied to the pattern-forming of electrode film.

(6) behind the pattern-forming, be inverted transfer substrate 231, when carrying out pressurized, heated, on resin prepreg (being in the organic material of B scalariform attitude) 215, impress processing, and carry out transfer printing like this (Figure 18 (i)).Then, peel off transfer substrate 231 (Figure 18 (j)).In transfer printing, also can just place on the resin substrate of solid state, and need not to use prepreg 215 by dielectric ceramic layer 211 being transferred to via tack coat impression resin substrate, described dielectric ceramic layer 211 has electrode film 212 and 213.

Preferably, the organic resin substrate 215 that will be transferred should have good dielectric property and low water absorbing properties, and thermoplastic resin and thermosetting resin can both be utilized.More particularly, for example can use epoxy resin, phenolic resins, vinyl benzyl ether compound, Bismaleimide Triazine, polyolefin-type resin, polyimides, polyester, polyphenylene oxide, polyphenylene sulfide, liquid crystal polymer, fluorine type resin and the resin of one of them that comprises them at least.And, if desired, also dielectric ceramic powder or magnetic can be sneaked into these resins, thereby give substrate self various electrical characteristics.

And by the pressure in the transfer printing being adjusted to 1 to 3MPa, the capacitor element layer that is easy to will to form film in transfer printing is imbedded prepreg.When capacitor element is embedded in prepreg, in later step, will produce and carry out the stacked step of substrate.Therefore, the space in the capacitor periphery disappears.Thereby, can improve the reliability of the capacitor element protection against the tide that is formed in the multilager base plate.

(7) peel off transfer substrate after, to form and cover dielectric ceramic layer 211 lip-deep electrode film 212 at first and aim at, and carry out pattern-forming (Figure 18 (k) and 18 (l)) in the mode that can form comparative electrode with electrode film 213 (having pattern formed thereon).Therefore, can on organic substrate, form capacitor with big electric capacity, described capacitor can not be set in conventional art on the substrate that uses resin or composite material, and described composite material has the dielectric ceramic material that is dispersed in organic substrate or the resin substrate.

(8) then, a plurality of organic resin substrates of capacitor (dielectric ceramic layer) that comprise such formation are by pressing (Figure 18 (n)) and insert resin prepreg 216 (Figure 18 (m)) stacked together between them.Thereby, can form and comprise a plurality of multilager base plates with capacitor element layer of high capacitance.

In stacked step, can thin film magnetic material layer, resistor layer, the various functional layers that comprise coil pattern and dielectric ceramic layer (capacitor layer) is stacked together.According to the multilager base plate of embodiment shown in Figure 17, except capacitor, also comprise inductor 222, described inductor 222 has adjacent thin film flux material layer 221 and the predetermined coil pattern of formation.And, various chip components can be installed on the surface of the multilager base plate that forms like this.Among Figure 17, reference number 225 and 227 is represented through hole and grounding electrode respectively.

And although dielectric ceramic layer 211 also can form to the whole base plate shown in 18 (n) and Figure 19 (a) and 19 (b) as Figure 18 (a), dielectric ceramic layer 211 also can form in the part of the substrate shown in Figure 20 (a) and 20 (b).Thereby, in order on the part of substrate, to form the dielectric ceramic layer, preferably, on transfer substrate, carry out mask, and on transfer substrate, form dielectric ceramic layer 211, and then they being transferred to resin substrate 215, described dielectric ceramic layer 211 comprises electrode film 212 and 213 on two surfaces.Also can form other functional layers, such as magnetosphere and resistor layer in the part that forms the part except that dielectric ceramic layer 211.

[example]

Below an example of the present invention will be described.

Preparation has the silicon wafer substrate that thickness is 0.4mm, as transfer substrate 231.On silicon wafer substrate, form Pt film and the Ti film that thickness is 0.1 μ m successively by sputtering method, and form electrode film 212.Next, under 600 ℃ heating condition, forming thickness by the RF sputtering method on electrode film 212 is the barium titanate film of 0.3 μ m, and it is set to dielectric ceramic layer 211.Further, on dielectric ceramic layer 211, form Ti film and the Cu film that thickness is 0.1 μ m successively.

Subsequently, be arranged on lip-deep electrode film 213, form predetermined pattern like this can form the such mode etching of capacitor.To its pressurization, heating, be that the vinyl benzyl resin prepreg of 100 μ m pushes with it with respect to thickness with inverted transfer substrate.Then, peel off transfer substrate.Under this situation, metal electrode film 212 covers whole surface.With metal electrode film 212 with aim at for forming the etched pattern of capacitor, and carry out pattern-forming can form the such mode of comparative electrode.

Therefore, can form on organic substrate can not be by the formed capacitor with big electric capacity of organic substrate in the conventional art.

Next, be to form the Cu film on the silicon wafer substrate of 0.4mm at thickness in the same manner, form the Ti film then, then Cu and Ti film are carried out etching and form pattern as coil.Further, in order to keep insulation property, forming thickness by sputtering method is the SiO of 0.2 μ m ₂Film, and form the Ni-Fe film that thickness is 0.3 μ m in the above, form magnetosphere 221 thus.In the mode identical it is transferred on the vinyl benzyl resin prepreg, generates the substrate that comprises magnetic film 221 and have coil 222 with dielectric ceramic layer 211.Temperature in the transfer printing is set to about 200 ℃, and the pressure that will be applied in the transfer printing is set to about 2MPa.Then, substrate and dielectric film are stacked by means of inserting resin prepreg 216 between them, thereby can form laminate shown in Figure 17.

As mentioned above, among the present invention, preferably, the heat treatment temperature of dielectric ceramic layer should be set to 500 ℃ to 900 ℃, and the problem that causes easily is: during transfer substrate, thickness is greater than the flexible obvious reduction of the ceramic dielectric film self of 5 μ m in manufacture process, and film self can break.Therefore, preferably, the thickness of dielectric ceramic layer should be set to be equal to or less than 5 μ m.

And, have at least (one or more) capacitor element layer to be embedded in and to be formed in the substrate that mainly comprises resin, described capacitor element layer is made of dielectric ceramic layer and the electrode film in same plane.

In addition, the pair of electrodes film is provided with the dielectric ceramic layer that inserts between them, and described pair of electrodes film is formed by different materials respectively on the opposite both sides of dielectric ceramic layer.

According to the manufacture method of multilager base plate of the present invention (wherein, have one deck (one or more layers) at least and be set at the multilager base plate of the capacitor element layer in the substrate) comprise the steps: on transfer substrate, to form first electrode film, on first electrode film, form the dielectric ceramic layer by membrane process, the dielectric ceramic layer is heat-treated to improve its degree of crystallinity, on the surface of dielectric ceramic layer, form second electrode film behind the heat treatment step, and will comprise that the dielectric ceramic layer of first and second electrode films is transferred on the resin prepreg.

When transfer step is included in transfer printing the capacitor element layer is imbedded the step of prepreg.

And this manufacture method further comprises the steps: after the step that forms second electrode film, makes second electrode film form pattern; To comprise that second electrode film of such formation pattern and the dielectric ceramic layer of first electrode film are transferred on the resin prepreg, and after transfer step, make first electrode film form pattern.

In addition, this manufacture method comprises the steps: that further the mask transfer substrate forms electrode pattern, on transfer substrate, form first electrode pattern by membrane process, form the dielectric ceramic layer by membrane process, heat treatment dielectric ceramic layer is to improve degree of crystallinity, thereby form electrode pattern by membrane process mask dielectric ceramic layer behind the heat treatment step and form second electrode pattern, and will comprise that the dielectric ceramic layer of first and second electrode patterns is transferred on the resin prepreg.

And in this manufacture method, the heat treatment temperature of dielectric ceramic layer is set to 500 ℃ to 900 ℃.

(industrial usability)

As mentioned above, according to the present invention, can obtain a kind of like this organic multilayer substrate: namely, it comprises the function element with good electrical characteristic that exists with high density, and has high reliability.

And, be transferred on the organic resin substrate by the dielectric ceramic layer that will have the degree of crystallinity that has improved through heat treatment, can in substrate, form the ceramic layer with high-k. Therefore, can provide a kind of comprise have small size, the organic multilayer resin substrate of the capacitor of high function and high reliability.

Claims (30)

1. multilager base plate, it is by obtaining a plurality of substrates are stacked, and comprises multiple function element in it, wherein,

Have at least a substrate to have the first functional material film at grade and by the formed second functional material film of second functional material that is different from the described first functional material film, and form multiple function element by the first and second functional material films.

2. multilager base plate according to claim 1, wherein,

The described first and second functional material films are the films with 5 μ m or littler thickness that formed by inorganic material.

3. multilager base plate according to claim 1, wherein,

The described first and second functional material films are to form the film that is transferred to then on the substrate on the transfer substrate by membrane process.

4. multilager base plate according to claim 1, wherein,

In the described first and second functional material films at least one by heat treatment to improve its degree of crystallinity.

5. according to any described multilager base plate in the claim 1 to 4, wherein,

The described first and second functional material films are by any one formation in dielectric material, magnetic material, piezoelectric, thermoelectric material and the semi-conducting material.

6. multilager base plate according to claim 1, wherein,

In the described first and second functional material films at least one formed by composite material, and described composite material obtains by functional powders is mixed and is distributed in the resin.

7. multilager base plate according to claim 6, wherein,

Described functional powders is any one in dielectric material, magnetic material, piezoelectric, thermoelectric material and the semi-conducting material.

8. multilager base plate according to claim 1, wherein,

The described substrate that is provided with multiple functional material film mainly comprises resin.

9. multilager base plate according to claim 1, wherein,

Have at least a substrate that comprises multiple function element and another substrate stacked as a whole by means of inserting binding material between them.

10. electronic component, it is installed in surface mounted component at least one surface according to any described multilager base plate in the claim 1 to 9.

11. the manufacture method of a multilager base plate comprises multiple function element in the multilager base plate, this manufacture method comprises the following steps:

First functional membrane and second functional membrane are set on the same plane of core material, and described second functional membrane is different with described first functional membrane.

12. the manufacture method of multilager base plate according to claim 11 further comprises the following steps:

By membrane process first and second functional membranes are set on transfer substrate; And

Described first and second functional membranes are transferred on the described core material.

13. the manufacture method of multilager base plate according to claim 12, wherein, described transfer step further comprises the following steps:

The surface that utilizes heating and pressurization will be provided with the described transfer substrate of functional membrane is pushed towards prepreg, thereby described prepreg is solidified; And

Peel off described transfer substrate.

14. the manufacture method of multilager base plate according to claim 12 further comprises following two steps or one of them:

Before the step that described first and second functional membranes are set, metal film is set, and/or

After the step that described first and second functional membranes are set, metal film is set.

15. the manufacture method of multilager base plate according to claim 12, wherein,

For in described first and second functional membranes each, on transfer substrate, be provided with in the step of described functional membrane, all repeat to cover described transfer substrate so that the step of described functional membrane to be set on described transfer substrate.

16. the manufacture method of multilager base plate according to claim 11, wherein,

Have at least one to be formed by composite material in described first and second functional membranes, described composite material obtains by various functional powders are mixed and are distributed in the resin material,

Described method further comprises:

The step of described functional membrane is set on support membrane; And

Described functional membrane is transferred to step on the core material.

17. the manufacture method of multilager base plate according to claim 16 further is included in the step that metal film is set on the described core material.

18. the manufacture method of multilager base plate according to claim 16, wherein,

For in the described multiple functional membrane each, on core material, be provided with in the step of described functional membrane, all repeat to cover described core material so that the step of described functional membrane to be set on described core material.

19. the manufacture method of multilager base plate according to claim 11, wherein,

Described functional membrane is any one in dielectric film, magnetic film, piezoelectric film, pyroelectric film and the semiconductor film.

20. the manufacture method of multilager base plate according to claim 11 further comprises the following steps:

At least one is comprised that the core material of described first and second functional membranes and another core material are stacked as a whole by means of inserting binding material between them.

21. the manufacture method of an electronic component comprises:

Manufacturing is according to each step in the method for any described multilager base plate in the claim 11 to 20, and

Surface mounted component is installed at least one lip-deep step of described multilager base plate.

22. a multilager base plate comprises a capacitor element layer at least in it, wherein,

Described capacitor element layer is by the dielectric ceramic layer and be arranged on two lip-deep electrode film of described dielectric ceramic layer and form, and by the base plate supports that mainly comprises resin, described dielectric ceramic layer is by the membrane process setting and have the degree of crystallinity that has improved by heat treatment.

23. multilager base plate according to claim 22, wherein,

The heat treatment temperature of described dielectric ceramic layer is 500 ℃ to 900 ℃, and described dielectric ceramic layer has 5 μ m or littler thickness.

24. multilager base plate according to claim 22, wherein,

At least one capacitor element layer is embedded in and is formed in the substrate that mainly comprises resin, and described capacitor element layer is formed by dielectric ceramic layer and electrode film at grade.

25. multilager base plate according to claim 22, wherein,

The pair of electrodes film forms by means of inserting the dielectric ceramic layer between them, and described pair of electrodes film is formed by different materials respectively on the opposite side of described dielectric ceramic layer.

26. the manufacture method of a multilager base plate wherein, forms the multilager base plate that comprises at least one capacitor element layer, described method comprises the following steps:

On transfer substrate, form first electrode film,

On described first electrode film, form the dielectric ceramic layer by membrane process,

Described dielectric ceramic layer is heat-treated with raising degree of crystallinity,

On the surface of described dielectric ceramic layer, form second electrode film behind the heat treatment step, and

The dielectric ceramic layer that will comprise described first and second electrode films is transferred on the resin prepreg.

27. the manufacture method of multilager base plate according to claim 26, wherein,

When described transfer step is included in transfer printing described capacitor element layer is imbedded the step of described prepreg.

28. the manufacture method of multilager base plate according to claim 26 further comprises the following steps:

After the step that forms described second electrode film, make described second electrode film form pattern;

To comprise that second electrode film of such formation pattern and the dielectric ceramic layer of first electrode film are transferred on the resin prepreg; And

After described transfer step, make described first electrode film form pattern.

29. the manufacture method of multilager base plate according to claim 26 further comprises the following steps:

Cover transfer substrate and form electrode pattern, on transfer substrate, to form first electrode pattern by membrane process;

Form the dielectric ceramic layer by membrane process;

Described dielectric ceramic layer is heat-treated to improve degree of crystallinity;

Behind described heat treatment step, cover described dielectric ceramic layer and form electrode pattern, to form second electrode pattern by membrane process; And

The described dielectric ceramic layer that will comprise described first and second electrode patterns is transferred on the resin prepreg.

30. the manufacture method of multilager base plate according to claim 26, wherein,

The heat treatment temperature of described dielectric ceramic layer is 500 ℃ to 900 ℃.

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