CN1744300A - Manufacturing method of film transistor base plate and stripping composition - Google Patents
Manufacturing method of film transistor base plate and stripping composition Download PDFInfo
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- CN1744300A CN1744300A CNA2005100996244A CN200510099624A CN1744300A CN 1744300 A CN1744300 A CN 1744300A CN A2005100996244 A CNA2005100996244 A CN A2005100996244A CN 200510099624 A CN200510099624 A CN 200510099624A CN 1744300 A CN1744300 A CN 1744300A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
Abstract
A kind of method of making thin film transistor base plate; comprise forming transistor thin layer pattern, form protective layer, form photoresist film; pixel electrode that formation is spaced apart from each other and conductive layer divest the photoresist pattern and remove conductive layer and dissolve conductive layer to use stripping composition.The method of this manufacturing thin film transistor base plate can improve the efficient of the manufacturing process of thin film transistor base plate.In addition, stripping composition can be reused.
Description
Technical field
The present invention relates to a kind of manufacturing method of film transistor base plate and stripping composition (strippingcomposition).More specifically, the present invention relates to a kind of manufacturing method of film transistor base plate that can simplify the thin film transistor base plate manufacturing process, and the stripping composition that is used for the manufacturing process of thin film transistor base plate.
Background technology
Usually, display unit comprises cathode ray tube (CRT) display unit, liquid crystal display (LCD) device, plasma display panel (PDP) (PDP) device and organic light emitting display (OLED) device.
Except the CRT device, most of display unit all comprises the thin film transistor base plate with thin-film transistor, so that display image.
In order to simplify the manufacturing process of thin film transistor base plate,, many new technology have been developed rapidly to reduce manufacturing cost.
Summary of the invention
The invention provides a kind of one exemplary embodiment of manufacturing method of film transistor base plate of the manufacturing process that can simplify thin film transistor base plate.
The present invention also provides a kind of and has been used for the thin film transistor base plate manufacturing process and one exemplary embodiment can reusable stripping composition.
In the one exemplary embodiment of manufacturing method of film transistor base plate, deposited crystal pipe thin layer pattern on substrate.On transistor thin layer pattern, protective layer is set.Photoresist film is set on protective layer.By photoetching process, photoresist film forms the photoresist pattern on substrate.Produce undercutting (undercut) by photoetching process in the office, bottom of photoresist pattern.On the part of substrate, form pixel region by removing photoresist film.Deposits conductive material on the photoresist pattern.Deposits conductive material to be forming conductive layer on the photoresist pattern, and on pixel region deposits conductive material to form pixel electrode.On pixel electrode and photoresist pattern, apply stripping composition to divest the photoresist pattern, make the conductive layer that is formed on the photoresist pattern separate from substrate.Collect with cross and contain from the stripping composition of the conductive layer of substrate separation and be stored in the holding tank.The conductive layer that separates from substrate is dissolved in the stripping composition of using fully.
In another one exemplary embodiment, stripping composition comprises the additive that divests that is used to divest the stripper of photoresist and is used to dissolve conductive layer.
In another one exemplary embodiment, stripping composition comprises the additive that divests that is used to divest the stripper of photoresist and is used to divest conductive layer.The stripper that is used to divest photoresist comprise about 20% weight ratio to amido (amine-based) compound of about 40% weight ratio, about 20% weight ratio to about 50% weight ratio protonated glycol-based (protonated glycol-based) compound and about 20% weight ratio to deprotonation multipolarity (deprotonated multipolar) compound of about 40% weight ratio.The additive that divests that is used to divest conductive layer comprises mercapto (thiol-based) compound of about 0.5% weight ratio to about 3% weight ratio.
In another one exemplary embodiment, the mercapto compound can comprise thiobenzoate (thiobenzoic acid) or thiolic acid.
In another one exemplary embodiment of manufacturing method of film transistor base plate, can reduce the quantity of mask, therefore can simplify the manufacturing process of thin film transistor base plate.In addition, the stripping composition that is used to make thin film transistor base plate can dissolve photoresist film, and in addition, stripping composition can dissolve conductive layer fully in photoresist film dissolving back.Advantageously, can reuse according to stripping composition of the present invention.
In another one exemplary embodiment of manufacturing method of film transistor base plate, on substrate, substantially form gate line and gate electrode with being perpendicular to one another.On substrate, form gate insulator, covering gate polar curve and gate electrode.On gate insulator, form amorphous silicon pattern and n
+Amorphous silicon pattern.On substrate, form data wire, source electrode and drain electrode.Source electrode and drain electrode are electrically connected to n
+Amorphous silicon pattern.Form gate line, gate electrode, amorphous silicon pattern, n
+Amorphous silicon pattern, data wire, source electrode and drain electrode use the multiple tracks mask.
Description of drawings
When in conjunction with the accompanying drawings with reference to following detailed description, above-mentioned will becoming with other advantages of the present invention understood easily, in the accompanying drawing:
Fig. 1 is a plane graph, shows the one exemplary embodiment of the gate line that the one exemplary embodiment by the membrane according to the invention transistor fabrication process forms on substrate;
Fig. 2 is a sectional view of taking from the line I-I ' of Fig. 1;
Fig. 3 is the plane graph that is formed at the one exemplary embodiment of the raceway groove on the one exemplary embodiment of the gate line among Fig. 1;
Fig. 4 is a sectional view of taking from the line II-II` of Fig. 3;
Fig. 5 is the n that is electrically connected among Fig. 3
+The plane graph of the source electrode of the one exemplary embodiment of amorphous silicon pattern and the one exemplary embodiment of drain electrode;
Fig. 6 is a sectional view of taking from the line III-III` of Fig. 5;
Fig. 7 is the plane graph that is formed at the one exemplary embodiment of the photoresist pattern on the one exemplary embodiment of protective layer;
Fig. 8 is a sectional view of taking from the line IV-IV` of Fig. 7;
Fig. 9 is the enlarged drawing of one exemplary embodiment of the part ' A ' of Fig. 8;
Figure 10 is the sectional view that is formed at the one exemplary embodiment of the electrically conducting transparent thin layer on the substrate one exemplary embodiment of Fig. 9;
Figure 11 is the sectional view of the substrate one exemplary embodiment of Figure 10, and the part of its photoresist and conductive layer is removed according to the exemplary method of the embodiment of the invention;
Figure 12 is the sectional view that does not have the one exemplary embodiment of the film substrate among Figure 11 of photoresist pattern and conductive layer;
Figure 13 A is by the photo of the conductive layer surface of the one exemplary embodiment of the stripping composition of example 1 dissolving;
Figure 13 B is by the photo of the conductive layer surface of the one exemplary embodiment of the stripping composition of example 2 dissolving; And
Figure 13 C is by the photo of the conductive layer surface of the one exemplary embodiment of the stripping composition of example 3 dissolving.
Embodiment
Describe the present invention in further detail below with reference to accompanying drawing, one exemplary embodiment of the present invention has been shown in the accompanying drawing.But, the present invention can should not be construed as limited to one exemplary embodiment described here with many multi-form enforcements.On the contrary, it is in order to make the disclosure thorough and fully that these embodiment are provided, and passes on complete invention scope to those skilled in the art.In the accompanying drawings, for clarity may amplification layer and regional size and relative size.
Should be understood that: claim element or layer be positioned at another element or layer " on ", when " being connected to " or " being coupled to " another element or layer, it may be located immediately on another element or the layer, directly connect or be coupled to another element or the layer, also may there be insertion element, perhaps be positioned on intermediary element or the layer, or connect or be coupled to intermediary element or layer.On the contrary, claim an element " directly " be positioned at another element or layer " on ", " directly connecting " or " coupling " to another element or layer time, do not exist insertion element or layer.Similarly numeral refers to similar elements from start to finish.As used herein, term " and/or " comprise one or more any and all combinations in the relevant Listed Items.
Although should be appreciated that and may use the term first, second, third, etc. to describe various elements, assembly, zone, layer and/or part herein, these elements, assembly, zone, layer and/or part should not be subject to these terms.Using these terms only is in order to distinguish an element, assembly, zone, layer or part and another element, assembly, zone, layer or part.So, under situation without departing the teaching of the invention, below first element, assembly, zone, layer or the part discussed can be called as second element, assembly, zone, layer or part.
For ease of describing, for example can use " ... down ", " ... following ", D score, " top ", " on " wait the space relative terms to describe the relation of an element or parts and another element or parts, as shown in the figure.Should be appreciated that relative terms intention in space contains different direction except that direction shown in the accompanying drawing, use or operating device.For example, if the device reverse turn among the figure is come, the element that is described as be in other elements or parts below so will be positioned at the top of another element or parts.Like this, exemplary term " ... following " can contain the above and below both direction.Device can be taked other orientations (revolve and turn 90 degrees or other directions), and corresponding the making an explanation of language described in space then used herein relatively.
Here, adopt the purpose of these specialized vocabularies only to be embodiment is given detailed explanation, rather than be used to limit the invention.Just as used herein, singulative " ", " being somebody's turn to do " also are intended to comprise most forms, unless context spells out other situations.Should further be understood that, when being used for this specification, term " comprises " existence of having specified described parts, integral body, step, operation, element and/or assembly, but does not get rid of the existence or the increase of one or more miscellaneous parts, integral body, step, operation, element, assembly and/or its combination.
Here describe embodiments of the invention with reference to sectional view, sectional view is the schematic diagram of the idealized embodiment (and intermediate structure) of the present invention.Like this, may because of, for example manufacturing technology and/or tolerance limit are brought the variation of view shape.Like this, embodiments of the invention just should not be construed as limited to given shape shown here, but comprise because of for example making the shape that causes and departing from.
For example, be shown the implantation concentration that the injection zone of rectangle generally has circle or curve and/or gradient at its edge, rather than the binary from the injection region to non-injection region changes.Similarly, may cause some injections in the zone between the surface that buried regions and injection are taken place by the buried regions that inject to form.Like this, illustrated zone is that schematically their shape is not intended to show the true form of device area, and is not intended to limit the scope of the invention in essence.
Unless otherwise defined, used here all terms (comprising technical term and scientific terminology) all have the common identical meanings of understanding of those of ordinary skill in the field under the present invention.It will also be appreciated that such as defined term in universaling dictionary to be interpreted as the having implication consistent, should not be interpreted as the meaning of Utopian or undue form, unless clearly definition herein with its implication in association area.
The one exemplary embodiment of manufacturing method of film transistor base plate
Fig. 1 is for being formed at the plane graph of the one exemplary embodiment of the gate line on the substrate by the one exemplary embodiment according to the method for fabricating thin film transistor of the embodiment of the invention.Fig. 2 is the sectional view of one exemplary embodiment of taking from the gate line of the line I-I` among Fig. 1.
With reference to figure 1 and Fig. 2, on substrate 100, form gate line 110 along first direction, and on gate line 110, form the gate electrode 112 that extends along the second direction that is basically perpendicular to first direction.In an exemplary embodiment, use mask composition integral body is formed at the conductive grid thin layer on the substrate 100, to form gate line 110 and gate electrode 112.In optional embodiment, the conductive grid thin layer can include, but are not limited to aluminium, aluminium alloy etc., and at least a combination that comprises previous materials.
Shown in the one exemplary embodiment of Fig. 2, can on substrate 100, form gate insulator 114 with covering gate polar curve 110 and gate electrode 112.
Fig. 3 is the plane graph that is formed at the one exemplary embodiment of the channel layer on the gate line of Fig. 1.Fig. 4 is a sectional view of taking from the line II-II of Fig. 3.
With reference to figure 3 and Fig. 4, can on the upper surface of gate insulator 114, form amorphous silicon thin layer and n successively
+Amorphous silicon thin layer 120.Can use mask to pass through photoetching process composition amorphous silicon thin layer and n
+Amorphous silicon thin layer 120 is to form amorphous silicon pattern 122 and n on gate electrode 112
+Amorphous silicon pattern 124.Amorphous silicon pattern 122 can be formed on the gate insulator 114 corresponding to gate electrode 112.Can on the upper surface of amorphous silicon pattern 122, form a pair of n
+Amorphous silicon pattern 124.In the one exemplary embodiment of Fig. 4, n
+ Amorphous silicon pattern 124 can be spaced from each other.
Fig. 5 is the n that is electrically connected to Fig. 3
+The plane graph of the source electrode of amorphous silicon pattern and the one exemplary embodiment of drain electrode.Fig. 6 is a sectional view of taking from the line III-III` of Fig. 5.
With reference to figure 5 and Fig. 6, on substrate 100, form amorphous silicon pattern 122 and n
+After the amorphous silicon pattern 124, the source/drain thin layer can integral body be formed on the substrate 100.In optional embodiment, can use mask to pass through photoetching process composition source/drain thin layer.As a result, can on substrate 100, form data wire 130, source electrode 132 and drain electrode 134.
As shown in Figure 5, data wire 130 can extend along second direction, and source electrode 132 can extend from data wire 130 along first direction.Data wire 130 can be vertical substantially each other with source electrode 132.
In an exemplary embodiment, the source electrode 132 that extends from data wire 130 can be electrically connected to n
+One side of amorphous silicon pattern 124.In optional embodiment, drain electrode 134 can be electrically connected to n
+The opposite side of amorphous silicon pattern 124.
With reference to figure 6, protective layer 140 can be formed on the substrate 100, with cover data line 130, source electrode 132 and drain electrode 134.
As mentioned above, can use the multiple tracks mask on substrate 100, to form gate line 110, gate electrode 112, n
+ Amorphous silicon pattern 124, amorphous silicon pattern 122, data wire 130, source electrode 132 and drain electrode 134.In optional embodiment, can use one mask to form gate line 110 and gate electrode 112.In other optional embodiment, can use one mask to form n
+ Amorphous silicon pattern 124, amorphous silicon pattern 122, data wire 130, source electrode 132 and drain electrode 134.
Fig. 7 is the plane graph that is formed at the one exemplary embodiment of the photoresist pattern on the protective layer.Fig. 8 is a sectional view of taking from the line IV-IV` of Fig. 7.Fig. 9 is for illustrating the enlarged drawing of the one exemplary embodiment of part ' A ' among Fig. 8.
With reference to figure 7 to Fig. 9, on substrate 100, integrally form the photoresist thin layer.Can use mask composition photoresist thin layer on the upper surface of substrate 100, to form photoresist pattern 150.Reference numeral 150a remarked pixel zone among Fig. 7 and Fig. 8, it can expose by the zone of removing photoresist pattern 150.
Can use photoresist pattern 150 as mask composition protective layer 140, on substrate 100, to form protective layer pattern 142.In an exemplary embodiment, when protective layer pattern 142 by opening partly or when all removing, just can expose drain electrode 134, as shown in Figure 8 by protective layer 140 coverings.
When using photoresist pattern 150 as mask composition protective layer 140, can be by wet etching etch protection layer 140 isotropically.For example, by isotropically etching, protective layer pattern 142 gets more protective layer 140 than the marginal portion etching of photoresist pattern 150, produce undercutting (undercut) at protective layer pattern 142 places by wet etching.As Fig. 9 institute best image, Reference numeral 142a has represented undercutting.
In optional embodiment, when using photoresist pattern 150, can pass through anisotropically etch protection layer 140 of dry etching as mask composition protective layer 140.For example, at protective layer 140 by dry etching anisotropically after the etching, can be by wet etching etch protection layer 140 isotropically, to produce undercutting 142a at protective layer pattern 142 places.
Figure 10 is the sectional view that is formed at the one exemplary embodiment of the electrically conducting transparent thin layer on the substrate of Fig. 9.
With reference to Figure 10, transparent conductive material is deposited on the substrate 100.Transparent conductive material can include, but are not limited to indium zinc oxide (IZO).In optional embodiment, transparent conductive material can comprise amorphous tin indium oxide (a-ITO), tin indium oxide (ITO) etc. and at least a combination that comprises previous materials.
In an exemplary embodiment, because transparent conductive material is formed on the substrate 100, can on photoresist pattern 150, form conductive layer 160.Shown in the one exemplary embodiment of Figure 10, pixel electrode 170 is formed on the gate insulator 114, and pixel electrode 170 and conductive layer 160 electricity isolation, because be formed with undercutting 142a between conductive layer 160 and pixel electrode 170.
Figure 11 is the sectional view of one exemplary embodiment of the substrate of Figure 10, and the part of its photoresist pattern and conductive layer is removed.
With reference to Figure 11, on substrate 100, form after conductive layer 160 and the pixel electrode 170, can pass through, for example sprinkler (dispenser) 182 sprays stripping composition 184 on substrate 100.
What in an exemplary embodiment, stripping composition 184 can comprise the stripper (stripping agent) that is used for the photoresist layer and be used for conductive layer divests additive (stripping additive).For example, the stripper that is used for the photoresist layer can be reacted with photoresist pattern 150, to remove photoresist pattern 150.In optional embodiment, the additive that divests that is used for conductive layer can etching conductive layer 160.
This stripping composition can comprise amine compound, protonated glycol-based compound, deprotonation multipolarity compound etc. and comprise the stripper of at least a combination of previous materials as the photoresist layer.Be used for divesting additive and can including, but are not limited to mercapto compound, oxalic acid derivative of conductive layer.
This stripping composition will be described in more detail below.
In an exemplary embodiment, stripping composition can divest photoresist pattern 150, remove conductive layer 160 and etching pixel electrode 170, because stripping composition can comprise stripper that is used for the photoresist layer and the additive that divests that is used for conductive layer.
With reference to Figure 11, when stripping composition 184 be sprayed to photoresist pattern 150, when being formed on conductive layer 160 on the photoresist pattern 150 and the pixel electrode 170, even conductive layer 160 and pixel electrode 170 also can be by the stripping composition etchings when divesting photoresist pattern 150.
Can will use stripping composition 184 to remove the conductive layer 160 required timing definitions that are formed on the photoresist pattern 150 from substrate 100 and be the very first time by divesting.With using stripping composition 184 complete etching conductive layers 160 and pixel electrode 170 required timing definitions was second time.The very first time and second time can be defined by formula 1 represented relation.
[formula 1]
The very first time＜the second time
Stripping composition 184 is sprayed on the substrate 100 so as in the very first time from substrate 100 separate conductive layers 160, thereby prevented that basically pixel electrode 170 from being damaged by stripping composition 184.In an exemplary embodiment, when using above-mentioned stripping composition, the very first time can be at about 2 minutes in about 4 minutes scope.In optional embodiment, the very first time can preferably arrive in about 3 minutes scope at about 2.5 minutes.
The part of the conductive layer 160 that separates from substrate 100 after applying stripping composition 184 flows into the holding tank 186 that fills residue stripping composition 184.The separate conductive layers 160 that inflow fills in the holding tank 186 that remains stripping composition 184 can be dissolved in second time fully.In an exemplary embodiment, when using above-mentioned stripping composition 184, second time can be in about 10 minutes in about 30 minutes scope.
In optional embodiment, after the conductive layer 160 that separates is dissolved in the holding tank 186 fully, stripping composition 184 recirculation can be provided to sprinkler 182.For example, stripping composition 184 can be reused in subsequent technique.
In an exemplary embodiment, photoresist pattern 150 can be divested in about 80 ℃ temperature range at about 60 ℃, and conductive layer 160 can arrive in about 80 ℃ temperature range dissolved at about 60 ℃.
Figure 12 is the sectional view of one exemplary embodiment that does not have the film substrate of the photoresist pattern of Figure 11 and conductive layer.
With reference to Figure 12, photoresist pattern 150 can be divested by stripping composition 184, and the conductive layer 160 of part can be separated from substrate 100, flows in the holding tank 186.Advantageously, thin-film transistor and pixel electrode 170 have been retained on the substrate 100.In an exemplary embodiment, preferably clean substrate 100, are left in stripping composition 184 damages on the substrate 100 effectively to prevent pixel electrode 170.
Stripping compositionOne exemplary embodiment
To describe the one exemplary embodiment of stripping composition below in detail.
As mentioned above, stripping composition can comprise stripper that is used for the photoresist layer and the additive that divests that is used for conductive layer.In an exemplary embodiment, the stripper that is used for the photoresist layer can divest the photoresist pattern, can the etching conductive layer and be used for the additive that divests of conductive layer.The stripper that is used for the photoresist layer can comprise amine compound, protonated glycol-based compound, deprotonation multipolarity compound etc. and comprise aforementioned at least a any combination.Be used for divesting additive and can comprising the mercapto compound of conductive layer.
The example of amine compound can include, but are not limited to monoethanolamine, monoisopropanolamine, carbinol methine amine, ehtylethanolamine, dimethanolamine (dimethanol amine), amino ethoxy monoethanolamine etc.These compounds can use or mix use separately.
In an exemplary embodiment, when the content of amine compound during, in a period of time, possibly can't fully divest the photoresist pattern less than about 20% weight ratio.In other one exemplary embodiment, when the content of amine compound surpassed about 40% weight ratio, pixel electrode may be by over etching and/or damage when divesting the photoresist pattern.In addition, when the content of amine compound surpassed about 40% weight ratio, the stripping composition 184 of some evaporations may change components contents in the stripping composition 184.
In optional embodiment, wherein the photoresist pattern can fully be divested and/or pixel electrode can be by over etching or damage, the content of stripping composition in about 20% weight ratio in the scope of about 40% weight ratio.In other optional embodiment, the content of stripping composition can preferably be in about 25% weight ratio in the scope of about 35% weight ratio.
The example of protonated compounds can include, but are not limited to butyldiglycol, diethylene glycol dimethyl ether, diethylene glycol ether, diethylene glycol propyl ether, diethylene glycol butyl ether, ethylene glycol etc.These compounds can use or mix use separately.
In an exemplary embodiment, when the content of protonated glycol-based compound during less than about 20% weight ratio, the dissolving of photoresist layer may excessively reduce.In other one exemplary embodiment, when the content of protonated glycol-based compound surpasses about 50% weight ratio, may produce deposit.In optional embodiment, wherein the dissolving of photoresist layer can excessively not reduce substantially and/or not effectively real estate give birth to deposit, the content of protonated glycol-based compound can be in about 20% weight ratio in the scope of about 50% weight ratio.
The example of deprotonation multipolarity compound can include, but are not limited to N-N-methyl-2-2-pyrrolidone N-, N, N-dimethylacetylamide, N, dinethylformamide, N, N-methylimidazole etc.These compounds can use or mix use separately.
In an exemplary embodiment, when the content of deprotonation multipolarity compound during less than about 20% weight ratio, the time that divests of photoresist pattern may increase, and causes the damage to conductive layer thus.Here, damage may be caused by the mercapto compound.In other one exemplary embodiment, when the content of deprotonation multipolarity compound surpasses about 40% weight ratio, may the etching conductive layer when etching photoresist pattern.In optional embodiment, when the time that divests of photoresist pattern can effectively not increase and/or conductive layer can not be damaged substantially and/or when not etched, the content of deprotonation multipolarity compound can be in about 20% weight ratio in the scope of about 40% weight ratio.In optional embodiment, the content of deprotonation multipolarity compound can preferably be in about 25% weight ratio in the scope of about 35% weight ratio.
In optional embodiment, divest additive and can comprise mercapto compound or oxalic acid derivative.In other optional embodiment, the mercapto compound can be better than the oxalic acid derivative and select for use.The example of mercapto compound can include, but are not limited to thiobenzoate, thiolic acid etc.These compounds can use or mix use separately.
In an exemplary embodiment, when the content of mercapto compound during less than about 0.5% weight ratio, conductive layer may not can be dissolved in the stripping composition fully, thereby the recycling of stripping composition may difficulty.In other one exemplary embodiment, the content of mercapto compound surpasses about 3% weight ratio, may produce deposit in stripping composition.In optional embodiment, the content of mercapto compound can be in about 0.5% weight ratio in the scope of about 3% weight ratio.In other optional embodiment, when conductive layer dissolved substantially and/or do not produce deposit effectively, the content of mercapto compound can preferably be in about 1.5% weight ratio in the scope of about 2% weight ratio.
Below, will describe one exemplary embodiment of the present invention in detail with reference to following example.Example only provides for the purpose of displaying, should not be interpreted as restriction of the present invention, because many variations all are possible under the situation that does not deviate from scope of the present invention.
Example 1 to 3
Obtained the stripping composition of about 100ml according to the composition of table 1.
Table 1
| Example | Form (percentage by weight) | ||||
| Amine compound | Protonated glycol-based compound | Deprotonation multipolarity compound | The mercapto compound | ||
| Monoethanolamine | Butyldiglycol | Ethylene glycol | The N-N-methyl-2-2-pyrrolidone N- | Thiolic acid | |
| Example 1 | 30 | 25 | 14 | 30 | 1 |
| Example 2 | 30 | 25 | 13.5 | 30 | 1.5 |
| Example 3 | 30 | 25 | 13 | 30 | 2 |
The estimation of the solvability (solvating power) of experiment 1:IZO conductive layer
Every kind of stripping composition of example 1,2 and 3 is heated to about 70 ℃ temperature, and the stripping composition after will heating then is added to indium zinc oxide (IZO) layer (550 ) and kept about 30 minutes.Observe the dissolving of conductive layer then.
Figure 13 A is by the photo of the conductive layer surface of the one exemplary embodiment of the stripping composition of example 1 dissolving.Figure 13 B is by the photo of the conductive layer surface of the one exemplary embodiment of the stripping composition of example 2 dissolving.Figure 13 C is by the photo of the conductive layer surface of the one exemplary embodiment of the stripping composition of example 3 dissolving.
,, within about 30 minutes of the heated stripping composition of adding, demonstrate the IZO layer and dissolved fully to 13C with reference to figure 13A.Advantageously, stripping composition can dissolve conductive layer fully within about 30 minutes processing time.
Experiment 2: elution (eluted) amount of measuring indium and zinc
After divesting the photoresist pattern fully, every kind of stripping composition of example 1 and 3 is sprayed on the thin film transistor base plate.Measure the elution amount of indium and zinc respectively.The result is shown in the table 2.The stripping composition of example 3 was sprayed onto on the thin film transistor base plate before divesting the photoresist pattern, measured the elution amount of indium and zinc then respectively.The result is shown in the table 3.
Table 2
After PR divests
| Metal | Example | 3 minutes (ppb) | 10 minutes (ppb) | 30 minutes (ppb) |
| Indium | Example 1 | 16.2 | 68.9 | 230.1 |
| Example 3 | 20.7 | 95.2 | 291.5 | |
| Zinc | Example 1 | 2.4 | 4.6 | 9.8 |
| Example 3 | 3.4 | 4.2 | 15.7 |
Table 3
Before PR divests
| Metal | Example | 3 minutes (ppb) | 10 minutes (ppb) | 30 minutes (ppb) |
| Indium | Example 3 | 125.2 | 206.8 | 358.2 |
| Zinc | Example 3 | 11.9 | 16.4 | 20.7 |
Metal elution scale before metal elution amount after reference table 3 and table 4, PR divest and PR divest reveals the difference of about 100ppb.Advantageously, the conductive layer on the photoresist pattern has been removed during PR divests.
Experiment 3: the variation of amine content
(forced exhaust, FE) the about 1000ml of type consumption PR as a comparison case divests the stripping composition of liquid (can buy from Korea S Dong-woo finechem Co. company, commodity are called PRS-2000) and about 1000ml example 2 by forcing consumption.In consumption process, measure the content of amine.The result is shown in the table 4.
Table 4
| 10 minutes (ml) | 20 minutes (ml) | 30 minutes (ml) | 40 minutes (ml) | |
| Comparative Examples | 10 | 20 | 30 | 40.5 |
| Example 4 | 7 | 10.5 | 14 | 15 |
Reference table 4, the variation of amine content is lower than the variation that divests amine content in the liquid of Comparative Examples in the stripping composition of example 4.Advantageously, the stripping composition according to one exemplary embodiment of the present invention can have excellent stability.
As mentioned above, the one exemplary embodiment of manufacturing method of film transistor base plate can improve the efficient of the manufacturing process of thin film transistor base plate.
In addition, the one exemplary embodiment of stripping composition that is used for the manufacturing process of above-mentioned thin film transistor base plate can be dissolved photoresist and/or conductive layer.Advantageously, can the residual solids composition in the stripping composition of using, the stripping composition of using so just can recycle and reuse in the technology of making follow-up thin film transistor base plate.Another advantage is that stripping composition has excellent stability.
Claims (27)
1. method of making thin film transistor base plate comprises:
On substrate, form transistor thin layer pattern;
On described transistor thin layer pattern, form protective layer;
On described protective layer, photoresist film is set;
On described substrate, form photoresist pattern and pixel region by photoetching process, produce undercutting with office, bottom at described photoresist pattern;
Deposits conductive material is to form conductive layer and pixel electrode on substrate on described photoresist pattern and described pixel region, and described conductive layer separates from described pixel electrode;
On described substrate, apply stripping composition, to divest described photoresist pattern from described substrate and/or to remove the described conductive layer that is formed on the described photoresist pattern; And
Collect the stripping composition use, described stripping composition with mistake comprises from described substrate and is removed and is dissolved in fully conductive layer the described stripping composition of using.
2. the method for claim 1 also comprises and cleans the described stripping composition that remains on the described substrate.
3. the method for claim 1 wherein saidly is stored in the holding tank with the stripping composition of crossing.
4. the method for claim 1, wherein said stripping composition comprise the stripper that is used for the photoresist layer and be used for the additive that divests of conductive layer,
The described stripper that is used for photoresist comprises:
About 20% weight ratio is to the amine compound of about 40% weight ratio;
About 20% weight ratio is to the protonated glycol-based compound of about 50% weight ratio; And
About 20% weight ratio arrives the deprotonation multipolarity compound of about 40% weight ratio, and
The described additive that divests that is used for conductive layer comprises the mercapto compound of about 0.5% weight ratio to about 3% weight ratio.
5. method as claimed in claim 4, wherein said amine compound account for about 25% to about 35% weight ratio.
6. method as claimed in claim 4, wherein said deprotonation multipolarity compound account for about 25% to about 35% weight ratio.
7. method as claimed in claim 4, wherein said mercapto compound account for about 1.5% to about 2% weight ratio.
8. method as claimed in claim 4, wherein said amine compound comprise monoethanolamine, monoisopropanolamine, carbinol methine amine, ehtylethanolamine, dimethanolamine, amino ethoxy monoethanolamine or comprise aforementioned at least a any combination.
9. method as claimed in claim 4, wherein said protonated glycol-based compound comprise butyldiglycol, diethylene glycol dimethyl ether, diethylene glycol ether, diethylene glycol propyl ether, diethylene glycol butyl ether, ethylene glycol or comprise aforementioned at least a kind of any combination.
10. method as claimed in claim 4, wherein said deprotonation multipolarity compound comprises N-N-methyl-2-2-pyrrolidone N-, N, N-dimethylacetylamide, N, dinethylformamide, N, N-methylimidazole or comprise aforementioned at least a kind of any combination.
11. method as claimed in claim 4, wherein said mercapto compound comprise thiobenzoate, thiolic acid or comprise aforementioned at least a kind of any combination.
12. method as claimed in claim 4, wherein said photoresist pattern and/or described conductive layer are divested under about 80 ℃ temperature at about 60 ℃.
13. method as claimed in claim 4, wherein said photoresist pattern are divested about 2 minutes to about 4 minutes.
14. method as claimed in claim 4, wherein said photoresist pattern are divested about 2.5 minutes to about 3 minutes.
15. method as claimed in claim 4, dissolved about 10 minutes to about 30 minutes of wherein said conductive layer.
16. the method for claim 1, wherein said stripping composition is sprayed on the described substrate.
17. the method for claim 1, wherein said pixel electrode and described conductive layer comprise indium zinc oxide, tin indium oxide, amorphous tin indium oxide or comprise aforementioned at least a kind of any combination.
18. the method for claim 1, wherein said stripping composition with mistake is recovered and continues on for to make follow-up thin film transistor base plate.
19. the method for claim 1, wherein said tft layer forms as follows:
Form gate line and gate electrode on described substrate, described gate line and described gate electrode are perpendicular to one another substantially;
Form gate insulator on described substrate, described gate insulator covers described gate line and described gate electrode;
On described gate insulator, form amorphous silicon pattern and n
+Amorphous silicon pattern; And
Form data wire, source electrode and drain electrode on described substrate, described source electrode and described drain electrode are electrically connected to described n
+Amorphous silicon pattern,
Wherein form described gate line, described gate electrode, described amorphous silicon pattern, described n
+Amorphous silicon pattern, described data wire, described source electrode and described drain electrode use the multiple tracks mask.
20. method as claimed in claim 19 wherein forms described gate line and uses mask with described gate electrode.
21. method as claimed in claim 19 wherein forms described n
+Amorphous silicon pattern, described data wire, described source electrode use mask with described drain electrode.
22. a stripping composition comprises:
Be used to divest the stripper of photoresist layer; And
Be used to divest the additive that divests of conductive layer.
23. stripping composition as claimed in claim 22, the wherein said stripper that is used to divest photoresist comprises:
About 20% weight ratio is to the amine compound of about 40% weight ratio;
About 20% weight ratio is to the protonated glycol-based compound of about 50% weight ratio; And
About 20% weight ratio arrives the deprotonation multipolarity compound of about 40% weight ratio, and
The described additive that divests that is used for conductive layer comprises the mercapto compound of about 0.5% weight ratio to about 3% weight ratio.
24. stripping composition as claimed in claim 23, wherein said amine compound comprise monoethanolamine, monoisopropanolamine, carbinol methine amine, ehtylethanolamine, dimethanolamine, amino ethoxy monoethanolamine or comprise aforementioned at least a any combination.
25. stripping composition as claimed in claim 23, wherein said protonated glycol-based compound comprise butyldiglycol, diethylene glycol dimethyl ether, diethylene glycol ether, diethylene glycol propyl ether, diethylene glycol butyl ether, ethylene glycol or comprise aforementioned at least a kind of any combination.
26. stripping composition as claimed in claim 23, wherein said deprotonation multipolarity compound comprises N-N-methyl-2-2-pyrrolidone N-, N, N-dimethylacetylamide, N, dinethylformamide, N, N-methylimidazole or comprise aforementioned at least a kind of any combination.
27. stripping composition as claimed in claim 23, wherein said mercapto compound comprise thiobenzoate, thiolic acid or comprise aforementioned at least a kind of any combination.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR68791/04 | 2004-08-30 | ||
| KR20040068791 | 2004-08-30 | ||
| KR44153/05 | 2005-05-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100029992A Division CN101477969B (en) | 2004-08-30 | 2005-08-30 | Method of manufacturing a thin film transistor substrate and stripping composition |
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| Publication Number | Publication Date |
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| CN1744300A true CN1744300A (en) | 2006-03-08 |
| CN100533710C CN100533710C (en) | 2009-08-26 |
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| CNB2005100996244A Active CN100533710C (en) | 2004-08-30 | 2005-08-30 | Method of manufacturing a thin film transistor substrate and stripping composition |
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| CN2009100029992A Active CN101477969B (en) | 2004-08-30 | 2005-08-30 | Method of manufacturing a thin film transistor substrate and stripping composition |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101129433B1 (en) |
| CN (2) | CN101477969B (en) |
| TW (1) | TWI430400B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7824972B2 (en) | 2006-11-20 | 2010-11-02 | Samsung Electronics Co., Ltd. | Producing a thin film transistor substrate by using a photoresist pattern having regions of different thicknesses |
| TWI427439B (en) * | 2006-06-21 | 2014-02-21 | Idemitsu Kosan Co | A method for producing a TFT substrate, and a method for recovering the film-stripping composition |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102009545B1 (en) | 2015-03-05 | 2019-10-21 | 동우 화인켐 주식회사 | Resist stripper composition |
| KR102269328B1 (en) * | 2015-03-12 | 2021-06-25 | 동우 화인켐 주식회사 | Etchant composition and method for fabricating metal pattern |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6326130B1 (en) * | 1993-10-07 | 2001-12-04 | Mallinckrodt Baker, Inc. | Photoresist strippers containing reducing agents to reduce metal corrosion |
| KR100249387B1 (en) * | 1997-12-02 | 2000-03-15 | 김영환 | Foreign substance removal method for dry etching apparatus for semiconductor manufacturing |
| JP2000284506A (en) * | 1999-03-31 | 2000-10-13 | Sharp Corp | Photoresist stripper composition and stripping method |
| JP4456330B2 (en) * | 2001-03-27 | 2010-04-28 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrates |
| KR20040009100A (en) * | 2002-07-22 | 2004-01-31 | 삼성전자주식회사 | Photoresist stripper recycling method |
| US8236485B2 (en) * | 2002-12-20 | 2012-08-07 | Advanced Technology Materials, Inc. | Photoresist removal |
-
2005
- 2005-05-25 KR KR1020050044153A patent/KR101129433B1/en active IP Right Grant
- 2005-08-30 CN CN2009100029992A patent/CN101477969B/en active Active
- 2005-08-30 CN CNB2005100996244A patent/CN100533710C/en active Active
- 2005-08-30 TW TW094129706A patent/TWI430400B/en active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI427439B (en) * | 2006-06-21 | 2014-02-21 | Idemitsu Kosan Co | A method for producing a TFT substrate, and a method for recovering the film-stripping composition |
| US7824972B2 (en) | 2006-11-20 | 2010-11-02 | Samsung Electronics Co., Ltd. | Producing a thin film transistor substrate by using a photoresist pattern having regions of different thicknesses |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060048092A (en) | 2006-05-18 |
| CN101477969B (en) | 2010-12-22 |
| CN100533710C (en) | 2009-08-26 |
| TWI430400B (en) | 2014-03-11 |
| KR101129433B1 (en) | 2012-03-26 |
| TW200620555A (en) | 2006-06-16 |
| CN101477969A (en) | 2009-07-08 |
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