CN1743878A - The method of preparing Bragg grating by ultraviolet writing on SiO 2 waveguide - Google Patents
The method of preparing Bragg grating by ultraviolet writing on SiO 2 waveguide Download PDFInfo
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- CN1743878A CN1743878A CN 200410074149 CN200410074149A CN1743878A CN 1743878 A CN1743878 A CN 1743878A CN 200410074149 CN200410074149 CN 200410074149 CN 200410074149 A CN200410074149 A CN 200410074149A CN 1743878 A CN1743878 A CN 1743878A
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Abstract
A kind of method at preparing Bragg grating by ultraviolet writing on SiO 2 waveguide is characterized in that, comprises the steps: that (1) forms under-clad layer, ducting layer and top covering successively on silicon substrate or silicon dioxide substrates; (2) in ducting layer, form waveguide by the ultraviolet wrting method; (3) ultraviolet is write waveguide and carry hydrogen; (4) in waveguide, write Bragg grating then; (5) annealing, the stationary raster performance.
Description
Technical field
The present invention is used for writing in ultraviolet and prepares Bragg grating in the waveguide, particularly a kind of method of preparing Bragg grating by ultraviolet writing on SiO 2 waveguide.
Background technology
SiO 2 waveguide adopts the method preparation of etching usually at present, this method complex process, and cost is very high, is unfavorable for suitability for industrialized production.Can make the earth silicon material refraction index changing of mixing germanium since K.O.Hill finds the Ultra-Violet Laser exposure, just produce a kind of new SiO 2 waveguide method for making---ultraviolet wrting method.The ultraviolet wrting method has dual mode: the one, carry out the Ultra-Violet Laser exposure by the zone that desire is formed waveguide, and this regional refractive index is risen, form light guide structure; Another kind method is desire to be formed wave guide zone zone in addition carry out the exposure of high-energy-density and high cumlative energy, and the refractive index of exposure area is descended, and has also formed light guide structure.The saturated index change that present this dual mode can be realized all is 10
-4～10
-3Magnitude.The variations in refractive index of material value of reaching capacity when forming ultraviolet and writing waveguide, it is very difficult to form I type grating more in the above.But in waveguide device, waveguide optical grating is a kind of structure that often adopts, and writes the method for preparing Bragg grating in the waveguide so press for to find in ultraviolet.
Summary of the invention
The purpose of this invention is to provide a kind of method for preparing Bragg grating in the waveguide that writes in ultraviolet, what key was this method formation is II type Bragg grating, by the waveguide specific region being carried out the long time period exposure of high-energy-density, make the refractive index of exposure region descend refractive index until exposure region, form II type Bragg grating less than original refractive index.
The present invention realizes by the following method:
A kind of method at preparing Bragg grating by ultraviolet writing on SiO 2 waveguide of the present invention is characterized in that, comprises the steps:
(1) on silicon substrate or silicon dioxide substrates 1, forms under-clad layer successively, ducting layer and top covering;
(2) in ducting layer, form waveguide by the ultraviolet wrting method;
(3) ultraviolet is write waveguide and carry hydrogen;
(4) in waveguide, write Bragg grating then;
(5) annealing, the stationary raster performance.
Wherein the formation method of under-clad layer, ducting layer and top covering is the combination of flame hydrolysis or plasma vapor phase deposition or thermal oxidation method or anodizing or above method.
Wherein top covering, ducting layer and under-clad layer are and mix or unadulterated silica glass, wherein Wave guide layer-doped photosensitizer germanium or tin and refractive index depressant boron or fluorine in right amount, under-clad layer is pure silica glass and is the silica glass of refractive index depressant boron or fluorine of having mixed that the adulterant of top covering 4 is boron, fluorine or phosphorus or its combination.
It is method of writing direct or mask wrting method that its medium ultraviolet writes the method that forms waveguide.
Wherein the writing mode of grating is any method that can form grating, as double-beam holographic coherent method or phase mask method or amplitude mask method or point-to-point writing method.
Wherein the type of Bragg grating is an II type Bragg grating.
The employed optical maser wavelength of its medium ultraviolet wrting method is Ultra-Violet Laser, and wavelength coverage is 100-400nm.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 double-beam holographic coherent method writes the synoptic diagram that writes grating in the waveguide in ultraviolet;
Fig. 2 phase mask method writes the synoptic diagram that writes grating in the waveguide in ultraviolet;
Fig. 3 amplitude mask method writes the synoptic diagram that writes grating in the waveguide in ultraviolet.
Embodiment
See also shown in Figure 1ly, a kind of method at preparing Bragg grating by ultraviolet writing on SiO 2 waveguide of the present invention comprises the steps:
(1) on silicon substrate or silicon dioxide substrates 1, forms under-clad layer 2 successively, ducting layer 3 and top covering 4, wherein the formation method of under-clad layer 2, ducting layer 3 and top covering 4 is combinations of flame hydrolysis or plasma vapor phase deposition or thermal oxidation method or anodizing or above method; Wherein top covering 4, ducting layer 3 and under-clad layer 2 are and mix or unadulterated silica glass, wherein not germanic in under-clad layer 2 and the top covering 4, contain 8% germanium and a spot of boron in the ducting layer 3, germanium is as photosensitizer, boron is as the refractive index depressant, under-clad layer 2, the thickness of ducting layer 3 and top covering 4 is respectively 15/8/20 micron.In ducting layer 3, form waveguide 5 by the ultraviolet wrting method then.
(2) form waveguide 5 by the ultraviolet wrting method in ducting layer 3, it is the mask wrting method that its medium ultraviolet writes the method that forms waveguide 5.Used optical maser wavelength is 193nm when writing waveguide, energy density 150mj/cm
2/ pulse, frequency 20Hz, 15 minutes time shutter.
(3) ultraviolet is write waveguide 5 and carry hydrogen, be about to chip with waveguide under hydrogen atmosphere, 600 ℃ of insulations 72 hours.
(4) write Bragg grating then in waveguide 5, wherein the writing mode of grating is to appoint the double-beam holographic coherent method.The double-beam holographic coherent method is divided into two light beams to beam of laser 6 by beam splitter 7 exactly, article two, light beam forms periodically interference fringe 9 after catoptron 8 reflections, thereby wave guide zone has been carried out periodic exposure, the refractive index of exposure region in the waveguide is descended, formed II type Bragg grating.Used Ultra-Violet Laser 6 is 248nm, 400mj/cm
2/ pulse, 20Hz, the time shutter is 40 minutes.
(5) annealing is in 120 ℃ of insulations 10 hours, stationary raster performance.
Embodiment 2 (as shown in Figure 2)
At first on silicon substrate 1, use plasma enhanced chemical vapor deposition method (PECVD) growthing silica under-clad layer 2 successively, ducting layer 3 and top covering 4, wherein not germanic in under-clad layer 2 and the top covering 4, contain 15% germanium and a spot of B in the ducting layer 3, under-clad layer 2, the thickness of ducting layer 3 and top covering 4 is respectively 15/6/20 micron.In ducting layer 3, form waveguide 5 by the ultraviolet wrting method then.Used optical maser wavelength is 248nm when writing waveguide, energy density 100mj/cm
2/ pulse, frequency 20Hz, 20 minutes time shutter.To put into the high pressure vessel that is full of hydrogen with the chip of waveguide, pressure is 20MPa, at room temperature places a week, carries hydrogen.Write II type Bragg grating by the phase mask method then, be about to phase mask, and expose with 6 pairs of phase masks of Ultra-Violet Laser 10 as for the waveguide top.Used Ultra-Violet Laser 6 wavelength are 193nm, energy density 300mj/cm
2/ pulse, 20Hz, the time shutter is 25 minutes.Then 120 ℃ of annealing 10 hours.
Embodiment 3 (as shown in Figure 3)
At first on silicon substrate 1, use plasma enhanced chemical vapor deposition method (PECVD) growthing silica under-clad layer 2 successively, ducting layer 3 and top covering 4, wherein not germanic in under-clad layer 2 and the top covering 4, contain 15% germanium and a spot of B in the ducting layer 3, under-clad layer 2, the thickness of ducting layer 3 and top covering 4 is respectively 15/6/20 micron.In ducting layer 3, form waveguide 5 by the ultraviolet wrting method then.Used optical maser wavelength is 244nm when writing waveguide, energy density 100mj/cm
2/ pulse, frequency 20Hz, 20 minutes time shutter.To put into the high pressure vessel that is full of hydrogen with the chip of waveguide, pressure is 12MPa, at room temperature places for two weeks, carries hydrogen.Then with amplitude mask as for waveguide top, and expose with 6 pairs of amplitude masks of Ultra-Violet Laser 11.Used Ultra-Violet Laser 6 wavelength are 244nm, energy density 400mj/cm
2/ pulse, 20Hz, the time shutter is 45 minutes.Then 120 ℃ of annealing 10 hours.
Claims (7)
1, a kind of method at preparing Bragg grating by ultraviolet writing on SiO 2 waveguide is characterized in that, comprises the steps:
(1) on silicon substrate or silicon dioxide substrates, forms under-clad layer, ducting layer and top covering successively;
(2) in ducting layer, form waveguide by the ultraviolet wrting method;
(3) ultraviolet is write waveguide and carry hydrogen;
(4) in waveguide, write Bragg grating then;
(5) annealing, the stationary raster performance.
2, write the method for preparing Bragg grating on the SiO 2 waveguide according to right 1 described Ultra-Violet Laser, it is characterized in that wherein the formation method of under-clad layer, ducting layer and top covering is the combination of flame hydrolysis or plasma vapor phase deposition or thermal oxidation method or anodizing or above method.
3, write the method for preparing Bragg grating on the SiO 2 waveguide according to right 1 described Ultra-Violet Laser, it is characterized in that, wherein top covering, ducting layer and under-clad layer are and mix or unadulterated silica glass, wherein Wave guide layer-doped photosensitizer germanium or tin and refractive index depressant boron or fluorine in right amount, under-clad layer is pure silica glass and is the silica glass of refractive index depressant boron or fluorine of having mixed that the adulterant of top covering is boron, fluorine or phosphorus or its combination.
4, write the method for preparing Bragg grating on the SiO 2 waveguide according to right 1 described Ultra-Violet Laser, it is characterized in that, it is method of writing direct or mask wrting method that its medium ultraviolet writes the method that forms waveguide.
5, write the method for preparing Bragg grating on the SiO 2 waveguide according to right 1 described Ultra-Violet Laser, it is characterized in that, wherein the writing mode of grating is any method that can form grating, as double-beam holographic coherent method or phase mask method or amplitude mask method or point-to-point writing method.
6, write the method for preparing Bragg grating on the SiO 2 waveguide according to right 1 described Ultra-Violet Laser, it is characterized in that, wherein the type of Bragg grating is an II type Bragg grating.
7, write the method for preparing Bragg grating on the SiO 2 waveguide according to right 1 described Ultra-Violet Laser, it is characterized in that, the employed optical maser wavelength of its medium ultraviolet wrting method is Ultra-Violet Laser, and wavelength coverage is 100-400nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100741490A CN100363764C (en) | 2004-09-03 | 2004-09-03 | Method for preparing Bragg grating by ultraviolet writing on SiO2 waveguide |
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|---|---|---|---|
| CNB2004100741490A CN100363764C (en) | 2004-09-03 | 2004-09-03 | Method for preparing Bragg grating by ultraviolet writing on SiO2 waveguide |
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| CN1743878A true CN1743878A (en) | 2006-03-08 |
| CN100363764C CN100363764C (en) | 2008-01-23 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103513324A (en) * | 2012-06-25 | 2014-01-15 | 鸿富锦精密工业（深圳）有限公司 | Fiber device |
| CN104133267B (en) * | 2014-08-19 | 2017-12-26 | 林安英 | The method for making multi-wavelength Volume Bragg grating |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1265221C (en) * | 1994-02-17 | 2006-07-19 | 住友电气工业株式会社 | Light wave guide and its producing method |
| US5745617A (en) * | 1996-12-30 | 1998-04-28 | D-Star Technologies, Llc | Near-ultra-violet formation of refractive-index grating using reflective phase mask |
| US6528239B1 (en) * | 1999-01-15 | 2003-03-04 | Sabeus Photonics, Inc. | Method of forming a grating in a waveguide |
| CN1372149A (en) * | 2002-02-07 | 2002-10-02 | 吉林大学 | Method for making array waveguiding grating by ultraviolet writing in |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103513324A (en) * | 2012-06-25 | 2014-01-15 | 鸿富锦精密工业（深圳）有限公司 | Fiber device |
| CN104133267B (en) * | 2014-08-19 | 2017-12-26 | 林安英 | The method for making multi-wavelength Volume Bragg grating |
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| CN100363764C (en) | 2008-01-23 |
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