CN1741713A - Manufacturing methods and electroless plating apparatus for manufacturing wiring circuit boards - Google Patents

Abstract

A manufacturing method for wiring circuit boards enhances product yield and promotes uniform electrical characteristics among the products by reducing fluctuations in the thickness of the electroless Cu plating film. In a plating bath ( 53 ) containing an electroless Cu plating liquid (EPL), wiring circuit board workpieces ( 100 ) are held in an upright position so as to leave gaps permitting distribution of the EPL. A bubble generator ( 57 ), which produces bubbles in the installation area of the workpieces ( 100 ), is disposed between the bottom of the bath ( 53 ) and the workpieces so as to help form an electroless Cu plating film ( 40 ) on each workpiece ( 100 ) and so that bubbles from the bubble generator ( 57 ) rise up along both sides of each workpiece.

Description

The chemical plating appts of the manufacture method of wiring circuit and manufacturing wiring circuit

Technical field

The present invention relates to the manufacture method of wiring circuit, more specifically relate to, form the wiring circuit of circuit by chemical Cu plating.The present invention also relates to make the chemical plating appts of wiring circuit.

Background technology

Organic wiring circuit of mutual laminated construction with conductor layer of dielectric layer and macromolecular material is known as and is used for IC, the multi-layer wire circuit board that is connected of LSI and other chips.Now, the organic wiring circuit that has ultra-thin circuit by the constructive method manufacturing great majority that on core substrate, replace stacked conductive layer and dielectric layer singly.At first, in the constructive method of typical technology, plate by chemical Cu and to form thin base material, and use this thin substrate conductor dbus to cross electrolysis Cu plating to form circuit.

In order to utilize electrolysis/chemical Cu electroplating method to form good circuit element (wiring and via conductor), known following technology.(patent documentation 1) keeping the technology that electrolysis Cu plates under bubble and the situation that surface of the work contacts.

[patent documentation 1] Japanese unexamined patent publication No.2003-133698

For making this organic wiring circuit, in order to boost productivity, make in batch from a plate Make a plurality of products. Although obtain a plurality of products (wiring circuit) from a plate (workpiece). But in fact only those products that are used as that passed through the outgoing inspection of electrical characteristics checks etc. are sent out Fortune.

Here, the present inventor notices that the faulty goods that fails inspection can be concentrated In the specific region of plate. Found that of Investigation on intensification is at the thickness ripple of chemical Cu plated film There is certain relation between the occurrence positions of moving and faulty goods. That is, as shown in figure 10, In the upper part near plate 90, form chemical Cu plated film with the thickness that designs, but leaning on The part of the lower end of nearly plate 90, chemical Cu plated film tends to deficiency. Here, upper and lower position Put corresponding to the upper and lower relation when plate 90 is immersed in chemical Cu plating bath.

During less than design load, following problem may appear at the film thickness of chemical Cu plating. Such as figure Shown in the 11A, if very thin, near the opening of path 92, form chemical Cu plated film 94. But the boundary vicinity in bottom and the side of path 92 depends on its position, very The difficult chemical Cu plated film 94 (dotted portion of Figure 11 A) that forms. In this state, carry out electrolysis The Cu plating, shown in Figure 11 B, the formation of via conductor is not enough, and leads at path May connect fault between body 96 and the via pad 98.

In view of these problems, therefore, the purpose of this invention is to provide a kind of manufacture method of wiring circuit, it can be by reducing the thickness fluctuation of chemical Cu plated film, improves the qualification rate of product and make the electrical characteristics uniformity of product.Another purpose of the present invention provides the device of the chemical plating of carrying out this manufacture method.

Summary of the invention

For addressing these problems, the method of manufacturing wiring circuit of the present invention comprises chemical Cu plating processing, it is characterized in that: in being full of the plating pond of chemical Cu plating bath, mode with the gap that allows step chemical Cu plating bath, in the middle of the wired circuit board manufacturing process, will be arranged in stand up position as a plurality of wiring circuit workpiece of intermediate products, in the plating pond of chemical Cu plating bath, bubble generator is set, this bubble generator is between bottom, plating pond and wiring circuit workpiece, have enough expansions on the horizontal direction of all perspective views that when comprising a plurality of wiring circuit workpiece of vertical downward direction projection, form, spray bubble from bubble generator, make bubble to float, and on each wiring circuit workpiece, apply chemical Cu plated film along the surface of all wiring circuit workpiece.

According to the present invention, all wiring circuit workpiece and bubble even contact, fresh chemical Cu plating bath is penetrated in the entire portion, thereby has reduced the thickness fluctuation of chemical Cu plated film.In addition, owing in path, form chemical Cu plated film securely, improve the conductivity and the connection reliability of path.As a result, the number of the wiring circuit of eliminating in exfactory inspection reduces.In addition, can be desirably in the central electrical characteristics unanimity of product.

In the situation of using Rochelle salt (Rochelle salt) as the chemical Cu plating bath of complexing agent, method of the present invention is effective especially.After forming thickness and be 0.3 μ m or handling to the chemical Cu plating of 3 μ m or smaller chemical Cu plated film greatly, use chemical Cu plated film to carry out electrolysis Cu plating and handle as the basic conductor that is used for current feed.

As the complexing agent of chemical Cu plating bath, use Rochelle salt (potassium sodium tartrate) or EDTA (ethylenediamine tetra-acetic acid) usually.Using the chemical Cu plating bath of EDTA is good on the plated film spreadability, but it is big to be easy to residual stress.On the other hand, use the chemical Cu plating bath residual stress of Rochelle salt little, but spreadability is poor slightly.Consider as weld the processing subsequently of adverse current (solder reflow), preferably the residual stress of plated film is as far as possible little.Stood fracture or crackle to occur when hot at the plated film of big residual stress.

In fact, use the chemical Cu plating bath of EDTA to be suitable for forming thick chemical Cu plated film.But except only forming the complete addition (full additivemethod) of circuit by chemical Cu plating, the chemical Du plated film that applies is the stock of electrolysis Cu plating.Therefore,, wish to form 0.3 μ m in order to remove easily, or big to 3 μ m or less thickness.From the angle of taking all factors into consideration, when combining the formation circuit, wish to use the chemical Cu plating bath that utilizes Rochelle salt with electrolysis Cu plating processing.By only using Rochelle salt, can not solve the problem of covering performance, and solve this problem by method of the present invention.Use another advantage of the chemical Cu plating bath of Rochelle salt to be, in room temperature generation deposit.

Uniformly-spaced to hang a plurality of wiring circuit workpiece, described support is immersed in the described plating pond on support, makes the interval of these wiring circuit workpiece and bubble generator to be maintained fixed.Therefore, the distance between bubble generator and wiring circuit workpiece can easily be kept, and makes bubble to contact with the wiring circuit workpiece equably.

Described bubble generator can have the bubble jet hole that is arranged in rows, and makes to spray bubble with the angle that tilts with respect to horizontal direction.Preferably, by regulating the relative position between bubble generator and the wiring circuit, the bubble that sprays from adjacent lines intersects in the position lower than the lower end of described wiring circuit workpiece, and moves along the two sides of wiring circuit workpiece.By intersecting once, can impel the generation of tiny bubble, and creep upwards along the both sides of wiring circuit workpiece in bubble stabilizes ground with the bubble that sprays from bubble generator.

More particularly, the bubble jet hole of bubble generator preferably is arranged in zigzag.Like this, the bubble that sprays from adjacent lines can easily intersect.

Alternatively, form bubble generators by linking a plurality of bubble generator tubes, and along two or more row in the vertical formation bubble jet hole in the bubble generator tube.Constitute bubble generator tube vertically preferably parallel of bubble generator with the internal direction (vertical direction of thickness direction) of wired circuit workpiece.Its result, bubble can contact the both sides of all wiring circuits more equably.That is, help forming more uniform plated film.

The pattern that can be applicable to the wiring circuit of method of the present invention is not particularly limited, yet in the middle of each layer of the completion status of product, the path base diameter that conduction connects is that 55 μ m or littler smaller-diameter path product are expected to obtain good especially effect.At this moment, integrated (link) each wiring circuit workpiece in as a plurality of unit workpiece of single wiring circuit.Fresh plating bath can be penetrated into all parts of the via hole of minor diameter hardly, and the coverage property of plated film is bad, exemplary application method of the present invention in the wiring circuit of the via hole with such minor diameter.

On the other hand, in order to address the above problem, the chemical plating appts of manufacturing wiring circuit of the present invention comprises: the plating pond that chemical plating fluid is housed; Support, it is used for a plurality of wiring circuit workpiece of asking product as the wiring circuit that will obtain, and the mode in the gap by allowing the step chemical plating bath is arranged in the stand up position, and keeps and be immersed in the plating pond; And bubble generator, it is set at the wiring circuit workpiece of support maintenance and plates between the bottom in pond, it has enough expansions in the horizontal direction that comprises all perspective views that the described a plurality of wiring circuit workpiece of vertical downward direction projection form, and have the bubble jet hole, the density that described bubble jet hole is set up allows bubble to contact the surface of all wiring circuit workpiece.

Chemical plating appts of the present invention has bubble generator, and the density that is provided with in the bubble jet hole that it has makes bubble to contact with the surface of all wiring circuit workpiece, and bubble can all wiring circuit workpiece of even contact shown in making.Because fresh chemical plating fluid can be penetrated into all little parts, can be reduced in the fluctuation of the thickness of the plated film that forms on the wiring circuit workpiece.

Description of drawings

Fig. 1 is the example schematic diagram of the cross section structure of wiring circuit;

Fig. 2 is the schematic diagram of wiring circuit workpiece;

Fig. 3 is that schematic diagram is handled in the manufacturing of wiring circuit;

Fig. 4 is the process schematic diagram that chemical Cu plating is handled;

Fig. 5 is the positioned opposite schematic diagram of wiring circuit workpiece and bubble generator;

Fig. 6 is the schematic diagram of bubble jet pattern;

Fig. 7 is the schematic plan view of bubble generator;

Fig. 8 is the amplification view of the formation pattern in bubble jet hole;

Fig. 9 is the A-A sectional view of Fig. 8;

Figure 10 is the schematic diagram of the thickness distribution of chemical Cu plated film;

Figure 11 A and 11B are the defective schematic diagrames that the thickness fluctuation of chemical Cu plated film causes;

Figure 12 is the vertical projection figure of chemical plating appts;

Figure 13 is the schematic diagram of the measuring position of chemical Cu coating film thickness;

Figure 14 is the graph of measured results of the chemical Cu coating film thickness of the inventive method formation; With

Figure 15 is the graph of measured results of comparative example.

Reference numeral

1 wiring circuit

1a unit workpiece

The 34h via conductor

40 chemical Cu plated films

51 supports

53 plating ponds

55 bubble generator tubes

55a, 55b bubble jet hole

57 bubble generators

100 wiring circuit workpiece

200 chemical plating appts

EPL chemistry Cu plating bath

Embodiment

The preferred embodiments of the present invention are described with reference to the accompanying drawings.

The cross section structure of the wiring circuit 1 that the schematically illustrated the present invention of Fig. 1 obtains.Wiring circuit 1 comprises that conduct is at heat stable resin plate (as bismaleimides-triazine plate), fibre reinforcement plate (for example, glass fiber reinforced epoxy resin) etc. the core conductor layer M1 of the wiring metal layer in the special pattern that forms on the both sides of the plate core of making 2, M11 (or so-called conductor layer).These core conductor layers M1, M11 form the most surface conductor figure on the surface of overlay core 2, and as bus plane or ground plane.On the other hand, in plate core 2, form through hole 12, and be formed at core conductor layer M1 the via conductors 30 that communicates between the M11 in the wall within it by boring or perforation.Resin extender 31 filling vias 12 with epoxy resin etc.

At core conductor layer M1, form first dielectric layer (the setting up layer) V1 that makes by thermosetting resin composition 6 on the upper strata of M11, V11.On their surface, further form the first conductor layer M2 with metal line 7, M12 by the Cu plating.Core conductor layer M1, the M11 and the first conductor layer M2, M12 connects by path 34.Similarly, at the first conductor layer M2, form second dielectric layer (the setting up layer) V2 that makes by thermosetting resin composition 6 on the upper strata of M12, V12.Surface at them further forms the second conductor layer M3 with metal end pad 10,17, M13.The first conductor layer M2, the M12 and the second conductor layer M3, M13 connects by path 34.Path 34 comprises via hole 34h, the via conductor 34s that forms at its inwall, form in the bottom side with the via pad 34p that communicates with via conductor 34s and on the opposition side of via pad 34p from the outwardly directed path platform of the open circumferential of via conductor 34h 34I.

On the first first type surface MP1 of plate core 34p, form core conductor layer M1, the first dielectric layer V1, the first conductor layer M2, the first wiring lamination L1 of the second dielectric layer V2 and the second conductor layer M3.On the second first type surface MP2 of plate core 2, form core conductor layer M11, the first dielectric layer V11, the first conductor layer M12, the second wiring lamination L2 of the second dielectric layer V12 and the second conductor layer M13.In these laminations, alternately laminated dielectric layer and conductor layer, the feasible first first type surface CP that can form dielectric layer 6, and on the first first type surface CP, form a plurality of metal end pads 10,17.Metal end pad 10 on the side of the first wiring lamination L1 comprises the soldering platform 10 that the flip chip of integrated circuit (IC) chip etc. connects.Metallic terminations pad 17 on the side of the second wiring lamination L2 is as the reverse platform (PGA pad, EGA pad) that wiring circuit is connected to motherboard etc. by pin grid array (PGA) or ball grid array (BGA).

Near the center of first first type surface of wiring circuit 1, soldering platform 10 is listed as into grid, and forms the chip installation portion thereon with the tin solder ridge 11 that forms.Reverse platform 17 in the second conductor layer M13 also is listed as being grid.At the second conductor layer M3, and the solder mask 8,18 that the last formation of M13 is photosensitive or thermosetting resin composition is made (SR1, SR11).In order to expose soldering platform 10 or reverse platform 17, form opening 8a, 18a, with one to one corresponding each.The bump 11 of the solder mask 8 that forms on the side of the first wiring lamination L1 can be made of the scolder that does not contain Pb substantially, as Sn-Ag, and Sn-Cu, Sn-Ag-Cu or Sn-Sb constitute.On the other hand, the metal end pad 17 of the side of the formation second wiring lamination L2 is with among the opening 18a that is exposed to solder mask 18.

The following describes the manufacture method of wiring circuit 1.

At first, form through hole 12 by boring or perforation in refractory plate that forms plate core 2 (coming acyl to press amine-cyanate resin plate as, span) or fiber-reinforced resin plate (epoxy resin that strengthens as glass fibre).By the figure plating, form core conductor layer M1, M11 and via conductors 30 are with resin extender 31 filling vias 12.

Make core conductor layer M1, after the M11 roughening, lamination and cured resin film, thus cover core conductor layer M1, M11, and form (dielectric layer forms and handles) first dielectric layer V1, V11.Form the resin molding of the thermosetting resin composition that mixes with silica filler etc.On plate core 2, sequential cascade core conductor layer M1, the M11 and the first dielectric layer V1, V11, with the laser radiation first dielectric layer V1, V11 forms (laser beam perforation processing) via hole 34h in special pattern on first type surface.Use photoetching technique to come to handle, in via hole 34h, form the first conductor layer M1, M12 with via conductor 34s by the figure plating.

By repeating this processing, form the first wiring lamination L1 and the second wiring lamination L2.Form other solder mask SR1, SR11 with Ni/Au plating solder mask SR1, the opening 8a of SR11, the conductor layer M3 that exposes among the 18a, M13, and obtains terminal pads 10,17.After Ni/Au plating is handled, with as the lead-free solder paste of Sn-Ag-Cu etc. fill the opening 8a of solder mask SR1, and carry out adverse current (reflow) processing.As a result, on terminal pads 10, form bump 11.

Then form core conductor layer M1, M11, the first conductor layer M2, M12, the figure plating of the second conductor layer M3, M13 and via conductors 30 and via conductor 34s is handled.As shown in Figure 3, the plating of the figure of embodiment is handled and is comprised chemical Cu plating processing, and the resistance plating forms to be handled, and electrolysis Cu plates processing, hinders plating lift-off processing and etch processes.By forming path 34 explanations at the example shown in Fig. 3.

As shown in Figure 3, resin molding is attached on the first type surface of core substrate, and forms dielectric layer 6, and with laser radiation dielectric layer 6, to form via hole 34h.Then carry out removing from via hole 34h the processing of erasing of resin remnants, washing is handled or other preliminary treatment are handled and chemical Cu plating is handled.

Generally speaking, as shown in Figure 1, wiring circuit 1 is manufactured the wiring circuit of the link of a plurality of wiring circuits 1 of link.Therefore, as shown in Figure 2, in the middle of making, handle in the manufacturing of the wiring circuit workpiece 100 enterprising row wiring circuit boards 1 that link a plurality of wiring circuit 1a.Handle by using chemical plating appts shown in Figure 4 to form as the chemical Cu plating of the circuit element of path 34.

As shown in Figure 4, chemical plating appts 200 comprises plating pond 53, and it contains chemical Du plating bath EPL; A plurality of wiring circuit workpiece 100 are remained on the support 51 of stand up position; And the bubble generator 57 between the bottom in wiring circuit workpiece 100 and plating pond.Support 51 keeps wiring circuit workpiece 100.Wiring circuit workpiece 100 is with correct interval, in the support 51 of stainless steel metal or ceramic material, be arranged in the stand up position, make to allow chemical Cu plating bath EPL to be distributed, and wiring circuit workpiece and support 51 are placed together the identical stand up position in plating pond 53.As a result, a plurality of wiring circuit workpiece 100 are immersed in the plating pond 53 that is full of chemical Cu plating bath EPL.

Bottom in plating pond 53, or rather, bubble generator 57 below the wiring circuit workpiece 100 that support 51 keeps, fully expansion on the horizontal direction of the whole picture of the perspective view that on comprising vertical downward direction, forms during all wiring circuit workpiece 100 of projection.Bubble generator 57 sprays bubble makes bubble float by creeping on the both sides of each wiring circuit workpiece 100.Because wiring circuit workpiece 100 and the comprehensive even contact of bubble have improved the cycle performance of chemical Cu plating bath EPL, and can suppress the fluctuation of the thickness of chemical Cu plated film 40.

Chemistry Cu plating bath EPL contains mantoquita (CuSO ₄Deng), reducing agent (HCHO etc.), complexing agent (Rochelle salt, EDTA etc.), pH conditioning agent (NaOH, KOH etc.) and other additives (polyethylene glycol, bipyridine etc.).In this embodiment, owing to combine the formation circuit with electrolysis Cu plating (being known as half additive method), the thickness that chemical copper Cu plated film 40 forms is 0.3 μ m, or greatly to 3 μ m or littler, so be removed easily afterwards.As the complexing agent of film forming chemical Cu plating bath EPL, recommend to use Rochelle salt.Use the chemical Cu plating bath RPL of Rochelle salt to have lot of advantages, for example, the processing that can plate in room temperature, the residual tensions of the chemical Cu plated film 40 of formation is little.

Specify bubble generator 57 below.As shown in Figure 4, bubble generator 57 is located at the outer peripheral inboard of the support 51 of a plurality of wiring circuit workpiece 100 that uniformly-spaced hang.Bubble generator 57 comprises the bubble jet hole 55a of sufficient density, and the 55b (see figure 8) makes to contact between the surface of bubble and all wiring circuit workpiece 100, so that bubble is penetrated into all wiring circuit workpiece 100 that support 51 keeps fully.In addition, between wiring circuit workpiece 100 and bubble generator 57, provide sufficient distance.Therefore, the bubble group of spraying from the bubble generator tube 55 of bubble generator 57 is upwards floated along the both sides of wiring circuit workpiece 100 then in the horizontal direction in case fully launch.

Shown in the schematic plan view of Fig. 7, bubble generator 57 has a plurality of (five) the bubble generator tube 55 that is arranged in parallel, and two ends are by 56,58 links of two compound tubes.In addition, when carrying out chemical Cu plating and handle, as shown in Figure 5, the bubble generator tube 55 of bubble generator 57 vertically parallel with the first type surface (face and the face of tossing about) of wiring circuit workpiece 100.As a result, bubble is delivered to reposefully in the gap between the wiring circuit workpiece 100,100 adjacent each other.Except the bubble generator 57 that uses bubble generator tube 55 as shown in Figure 7, also can use the bubble generator of hollow sheeting shape with a plurality of pores that on a main surface side, are provided with.In addition, the structure of gassing also can form as one with plating pond 53 in the bottom in plating pond 53.

Shown in the enlarged drawing of Fig. 8, in each the bubble generator tube 55 that constitutes bubble generator 57, longitudinally serrated topography becomes two promoting the circulation of qi bubble spray-hole 55a, 55b.The cross section of bubble generator tube 55a is circular.Therefore, the position of the peripheral angle of the peripheral angle position of delegation's bubble jet hole 55a and another promoting the circulation of qi bubble spray-hole 55b is offset each other.

More particularly, shown in Fig. 9 sectional view, the link direction of the center ο of bubble jet hole 55a and bubble generator tube 55 is and vertical direction cant angle theta angle.Similarly, the link direction of the center ο of another bubble jet hole 55b and bubble generator tube 55 is with respect to vertical direction cant angle theta angle.This θ angle is set to about 45 degree.As a result, bubble generator 57 sprays bubble with the angle that tilts to horizontal direction.

Like this, by being adjusted to greater than particular value at the interval of vertical direction with bubble generator 57 and wiring circuit workpiece 100, shown in Fig. 4 and 6, so must you below the lower end of wiring circuit workpiece 100 intersects for the bubble that sprays from bubble generator tube adjacent each other 55.As a result, because the quantity of bubble generator tube 55 is lacked than the number that is arranged in the wiring circuit workpiece 100 in the support 51, can under the situation that keeps all wiring circuit workpiece 100 and bubble even contact, carry out chemical Cu plating and handle.Preferably, between each adjacent wire circuit board workpiece 100,100, a bubble generator tube 55 is set, or the bubble jet hole is set with the same number of number with the row of wiring circuit workpiece 100.But, consider productivity ratio, installing space and installation cost preferably, as in the present invention, are provided with the space of adjacent bubble generator tube 55,55 wideer at interval than being provided with of wiring circuit workpiece 100.

Simultaneously, in this embodiment, the gas that is sent to bubble generator 57 is air, if but because the stirring of air, the oxygen concentration of dissolving too raises and is called problem, also can use other gases, as stirring with nitrogen, or, can stir with the diluent gas that reduces oxygen concentration with the air nitrogen dilution.Perhaps, under the situation of the oxygen concentration that monitoring is dissolved, spray bubble off and on.

Get back to Fig. 3.After chemical Cu plating is handled, will hinder and plate agent 42 formation figures (hinder plating and form processing), feasible exposing is used to form the thick formation zone of plating than chemical Cu plated film 40 thicker Cu.After formation resistance plating 42, use is carried out electrolysis Cu plating processing as the chemical Cu plated film 40 of the stock of current feed.As a result, in via hole 34h, form via conductor 34s.After electrolysis Cu plating is handled, remove resistance plating 42 (resistance plating lift-off processing).Removing resistance plating 42 o'clock, expose chemical Cu plated film 40 in the non-formation zone of electrolysis Cu plating, and, remove chemical Cu plated film 40 by soft etching (short time etching).As a result, with regard to direct current, wiring is separated from each other.

Experiment

Carry out following experiment in order to confirm effect of the present invention.

(chemical plating appts)

Chemical plating appts 200 shown in the vertical projection diagram of use in Figure 12 carry out this experiment.The part that thick line in plating pond 53 is represented is the bubble generator 57 shown in Fig. 7.When plating processing, regulate the air feed speed that enters bubble generator 57 by the mass flow controller (not shown).

(wiring circuit workpiece)

Shown in Figure 12 perspective view, support 51 be set at bubble generator 57 directly over.Wiring circuit workpiece 100 is suspended on the position that fine rule is represented in the support 51.In all wiring circuit workpiece 100, substrate main surface is parallel to the vertical and vertical direction of bubble generator 57.In a bubble generator 57, two supports 51,51 are arranged side by side.In a support 51,16 wiring circuit workpiece 100 are set.Wiring circuit workpiece 100 is the workpiece in the processing procedure before forming path, only is being of a size of the resin molding of pasting wiring circuit on the blank substrate of 450mm * 430mm (the assembling film of being produced by Ajinomoto).

(state of plating)

The composition of chemistry Cu plating bath is as follows:

Cu concentration 2.5 ± 0.3 (g/ litre)

HCHO concentration 2.0 ± 0.5 (g/ litre)

NaOH concentration 1.5 ± 0.5 (g/ litre)

Proportion maximum 1.08

Use Rochelle salt as complexing agent.During chemical Cu plating process, bath temperature is remained on 36 ℃ by using heater.In chemical Cu plating was handled, the thickness of chemical Cu plated film was adjusted to about 1.0 μ m.During carrying out chemical Cu plating processing, confirm all wiring circuit workpiece 100 and bubble even contact by eye-observation.

(the thickness measure result of chemical Cu plated film)

After chemical Cu plating is handled,, and in water, clean wiring circuit workpiece 100 from plating pond 53 fast lifting supports 51.In each wiring circuit workpiece 100, at five specific position measurement coating film thicknesses of Figure 13, and the distribution of research thickness.The results are shown in Figure 14.Curve at Figure 14 illustrates, and all results that measure on all positions are included in the scope of square expression.

As shown in figure 14, the method according to this invention is all very little at the thickness fluctuation of same position or diverse location chemistry Cu plated film.Standard deviation is 0.026.As shown in figure 14, the vertical direction media thickness at wiring circuit workpiece 100 does not have significant difference.

(comparison example)

Plating appts 200 from Figure 12 takes out all bubble generators 57, replaces the blender of screw as plating bath is installed.Except slowly stir with these screws the plating bath with the identical state of the foregoing description process, on wiring circuit workpiece 100, form chemical Cu plated film.After forming chemical Cu plated film, with the thickness of the process measurement film identical with embodiment.The results are shown in Figure 15.

As shown in figure 15, by only stirring the comparison example method of plating bath, the thickness fluctuation of chemical Cu plated film is big.Standard deviation is 0.086.As shown in figure 15, on position 1 and 2, have the big obvious tendency of film thickness near the upper end of wiring circuit workpiece 100, little at position 5 thickness near the lower end.

Claims (8)

1. the manufacture method of a wiring circuit (1), it comprises chemical Cu plating processing, it is characterized in that: in being full of the plating pond (53) of chemical Cu plating bath (EPL), mode with the gap that allows step chemical Cu plating bath will be arranged in stand up position as a plurality of wiring circuit workpiece (100) of the intermediate products in the middle of the manufacturing of wiring circuit (1); Between bottom, plating pond (53) and wiring circuit workpiece (100) bubble generator (57) is being set, wherein the horizontal direction of all perspective views of this bubble generator (57) a plurality of wiring circuit workpiece of projection on the direction that is included in vertically downward (100) time formation has enough expansions; Spray bubble from bubble generator (57), make that bubble can be along surface (40) come-up of all wiring circuit workpiece (100); With on each wiring circuit workpiece (100), apply chemical Cu plated film.

2. the manufacture method of wiring circuit as claimed in claim 1 (1), wherein, this chemistry Cu plating bath (EPL) contains the Rochelle salt as complexing agent, and form thickness be 0.3 μ m or handle to the chemical Cu plating of 3 μ m or littler chemical Cu plated film (40) greatly after, use chemical Cu plated film (40) to carry out electrolysis Cu plating and handle as the basic conductor that is used for current feed.

3. the manufacture method of wiring circuit as claimed in claim 1 or 2 (1), wherein, these a plurality of wiring circuit workpiece (100) are gone up at support (51) uniformly-spaced to hang, and described support (51) is immersed in the described plating pond (53), makes the interval of these wiring circuit workpiece (100) and bubble generator (57) to be maintained fixed.

4. the manufacture method of any one described wiring circuit as in the above-mentioned claim 1 to 3, wherein, described bubble generator (57) has the bubble jet hole (55a that arranges with row, 55b), make and spray bubble with the angle that tilts with respect to horizontal direction, and by regulating the relative position of bubble generator (57) and wiring circuit workpiece (100), make the bubble that sprays from adjacent lines intersect, and move along the two sides of wiring circuit workpiece (100) in the position lower than the lower end of described wiring circuit workpiece (100).

5. the manufacture method of wiring circuit as claimed in claim 4 (1), wherein, (55a 55b) is arranged in zigzag in this bubble jet hole.

6. the manufacture method of any one described wiring circuit (1) as in the above-mentioned claim 1 to 5, wherein, this bubble generator is formed by a plurality of bubble generator tubes of link (55), and in a bubble generator tube (55), longitudinally form two row or multirow bubble jet hole (55a, 55b), and constitute bubble generator tube (55) vertically parallel of bubble generator (57) with the internal direction of wiring circuit workpiece (100).

7. the manufacture method of any one described wiring circuit (1) as in the above-mentioned claim 1 to 6, wherein, this wiring circuit (1) is the parts of cat walk diameter with base diameter of 55 μ m or following path (34).

8. chemical plating appts (200) of making wiring circuit comprising:

Plating pond (53), it is used to be equipped with chemical plating fluid (EPL);

Support (51), it is used for the mode with the gap that allows step chemical plating bath (EPL), will be arranged in the stand up position as a plurality of wiring circuit workpiece (100) of the intermediate products of the wiring circuit that obtains, and keeps and immerse in the plating pond (53); With

Bubble generator (57), it is set at the wiring circuit workpiece (100) of support (51) maintenance and plates between the bottom in pond (53), it has enough distribution expansions in a horizontal direction, to comprise all perspective views that form when with the described a plurality of wiring circuit workpiece of direction projection vertically downward (100), and has bubble jet hole (55a, 55b), the density that is provided with in described bubble jet hole allows bubble to contact the surface of all wiring circuit workpiece (100).

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