CN1740381A - Physical vapor deposition process and apparatus - Google Patents
Physical vapor deposition process and apparatus Download PDFInfo
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- CN1740381A CN1740381A CN 200410068273 CN200410068273A CN1740381A CN 1740381 A CN1740381 A CN 1740381A CN 200410068273 CN200410068273 CN 200410068273 CN 200410068273 A CN200410068273 A CN 200410068273A CN 1740381 A CN1740381 A CN 1740381A
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- magnetron device
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- 238000005240 physical vapour deposition Methods 0.000 title abstract description 6
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 11
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- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
One kind of physical vapor deposition apparatus consists of one reaction chamber and one electromagnetic controller configured onto the reaction chamber. During physical vapor deposition, the magnetic poles of the electromagnetic controller are turned inversely to solve the problem of asymmetrical deposition in the side walls of opening.
Description
Technical field
The present invention relates to a kind of semiconductor technology and equipment thereof, particularly relate to a kind of physical vapor deposition (Physical Vapor Deposition is called for short PVD) technology and equipment thereof.
Background technology
In semiconductor technology, the formation method of film includes methods such as physical vaporous deposition or chemical Vapor deposition process, and physical vaporous deposition can be divided into vapour deposition method (Evaporation) and two kinds of forms of sputtering method (Sputtering).Wherein, evaporation is that the saturation vapour pressure that utilizes vapor deposition source to be possessed when high temperature carries out depositing of thin film to the vapor deposition source heating.Sputter then is ion bombardment (Ion Bombardment) target (Target) that utilizes in the plasma body to be produced, and makes the atom on the target be splashed out, and then can be deposited into after these atoms that splashed out and form film in the substrate.
It should be noted that, in sputter procedure, (for example: the argon gas ion) how much generation has a confidential relation because the generation of plasma body and plasma gas ion, that is have what of high-octane electronics and plasma gas atomic collision probability, obviously influence the carrying out of sputter behavior.So for the probability that improves the plasma gas atomizing/ionizing (also claiming to splash rate (Sputtering Yield)), preferred mode is exactly that the distance that allows electronics be passed through before the plasma disappearance is elongated.The method of general normal employing at present is magnetron sputtering (Magnetron Sputtering) method, its target top in plasma-reaction-chamber, additional configuration one magnetic control (Magnetron) device, so can influence moving of charged particle by the magnetic field that this magnetic control means produced, and then move it path generation deviation, and present screw type moving.So, can significantly improve plasma gas atomic collision free probability by the configuration of this magnetic control means, and then improve it and splash rate.And the lifting that splashes rate can be so that operation magnetic controlled plasma required vacuum tightness can maintain the scope lower than traditional direct-current plasma, and then more can control itself characteristic of deposit film.
Yet, though the configuration of this magnetic control means has improved the Ionized probability of plasma gas, but the influence in the magnetic field that path of its bombardment target of these ionizable plasma gass but is subjected to this magnetic control means and is produced, and cause as shown in Figure 1 asymmetric (Asymmetry) sedimentary problem.Shown in Figure 1, be to illustrate existing a kind of magnetic control d.c. sputtering that utilizes in the lithography alignment of wafer or the synoptic diagram of the part of the groove in superimposed mark deposit film.As shown in Figure 1, because the magnetic field that magnetic control means produced can make the plasma gas ion move in a spiral manner, and then influence the splash angle of plasma gas ion for target, therefore the sedimentary film 102 of institute produces asymmetric sedimentary problem being positioned at opening 104 sidewalls on wafer 100.And, the film skew (Shift) that this asymmetric deposition caused, for the thin film deposition of the different positions on the wafer 100, its offset direction also is not quite similar.That is, the plasma gas ion that spiral way moves can make on the wafer 100 sedimentary film 102 produce the problem of rotation skew (Rotation Shift) (shown in labels 106).
In addition, the aluminium conductor technology in the interconnect technology also can utilize the magnetic control d.c. sputtering to finish.And; can accurately aim in order to ensure formed aluminium conductor with contact hole; therefore after the aluminium conductor material layer is deposited on wafer comprehensively; usually carry out the measurement and the comparison of alignment mark position and superimposed mark after photo-resist layer after can exposing to the definition aluminium conductor and the etching, superimposed with the contact hole or the connector (Plug) of lower floor accurately to determine aluminium conductor.If skew to some extent compensates correction in the time of can exposing to the photo-resist layer that defines aluminium conductor next time.Owing to aim at or the measurement of superimposed mark is to locate according to the interface of the different brightness that difference of height presents of mark, when metal after asymmetric deposition, just can be offset to some extent according to the resulting center position of groove difference of height again as the recess sidewall both sides.Yet, owing to this asymmetric deposition is caused by the magnetic field that magnetic control means produced, and being subject to the advantage that magnetic control means has the rate that splashes that improves the plasma gas atom, therefore on the means that this asymmetric deposition problems of solution is taked, can be limited to.At present industry produces the problem of skew for photoetching process, though can solve by some set-up procedures, owing to drift condition in each gravity pouring machine and each time all is not quite similar, so this method is not to be an effective solution.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of Pvd equipment exactly, so that utilize the sedimentary film of this equipment institute to have symmetry being positioned at opening sidewalls.
Another object of the present invention is providing a kind of physical gas-phase deposition exactly, with when carrying out physical gas-phase deposition, by the magnetic pole of the magnetic control means that reverses when participating in the cintest so that sedimentary film has symmetry.
A further object of the present invention provides a kind of Pvd equipment, so that utilize the sedimentary film of this equipment institute to have symmetry being positioned at opening sidewalls.
Another purpose of the present invention provides a kind of physical gas-phase deposition, with when carrying out physical gas-phase deposition, by lasting rotary magnetron device so that sedimentary film has symmetry.
The present invention proposes a kind of Pvd equipment, and this Pvd equipment is made of a reaction chamber and an electro-magnet magnetic control means.This electro-magnet magnetic control means is disposed at the outside top of reaction chamber, wherein when when carrying out physical gas-phase deposition, and come personally (In-Situ) reverse magnetic pole of this electro-magnet magnetic control means.
The present invention proposes a kind of physical gas-phase deposition, and this physical gas-phase deposition at first provides a reaction chamber, and the outside top of this reaction chamber disposes the electro-magnet magnetic control means.Then, start the electro-magnet magnetic control means, carry out first deposition step.Then, the magnetic pole of this electro-magnet magnetic control means that reverses carries out second deposition step, and finishing a depositing of thin film, or the magnetic pole of periodic inversion electro-magnet has been finished this thin film deposition steps.
Since in second deposition step, can be by the magnetic pole of this electro-magnet magnetic control means of counter-rotating, with the asymmetric sedimentary offset direction of reversible film.Therefore utilize this Pvd equipment, can solve the asymmetric sedimentary problem of film in opening sidewalls with electro-magnet magnetic control means.
The present invention proposes a kind of Pvd equipment, and this Pvd equipment is made of a reaction chamber and a rotary magnetron device.Wherein this rotary magnetron device is disposed at the outside top of reaction chamber, and this rotary magnetron device comprises at least two magnet set, and these magnet set are with rotational symmetry or in the face of claiming but the opposite mode of magnetic pole disposes.
The present invention proposes a kind of physical gas-phase deposition, this physical gas-phase deposition at first provides a reaction chamber, and the outside top of this reaction chamber disposes the rotary magnetron device, wherein this rotary magnetron device comprises at least two magnet set, and these magnet set with rotational symmetry or in the face of claiming but the opposite mode of magnetic pole dispose.Then, start this rotary magnetron device, to carry out a depositing operation, wherein in the process of depositing operation, this rotary magnetron device is rotated simultaneously.
Since in the process of carrying out thin film deposition, can be by rotating this rotary magnetron device simultaneously, with the asymmetric sedimentary offset direction of rotating thin film.Therefore utilize this Pvd equipment, can solve the asymmetric sedimentary problem of film in opening sidewalls with rotary magnetron device.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. elaborates.
Description of drawings
Fig. 1 is that existing a kind of magnetic control d.c. sputtering that utilizes is in the lithography alignment of wafer or the synoptic diagram of the part of the groove in superimposed mark deposit film.
Fig. 2 A is the diagrammatic cross-section according to a kind of Pvd equipment of the first embodiment of the present invention.
Fig. 2 B is when utilizing the Pvd equipment of Fig. 2 A to carry out physical gas-phase deposition, the diagrammatic cross-section of this Pvd equipment.
Fig. 3 A to Fig. 3 B is according to the aligning of the first embodiment of the present invention on wafer or the flow process diagrammatic cross-section of superimposed groove deposit film.
Fig. 4 be among Fig. 2 A the electro-magnet magnetic control means on look synoptic diagram.
Fig. 5 is the diagrammatic cross-section according to a kind of Pvd equipment of the second embodiment of the present invention.
Fig. 6 A to Fig. 6 B is according to the aligning of the second embodiment of the present invention on wafer or the flow process diagrammatic cross-section of superimposed groove deposit film.
Fig. 7 A is the diagrammatic cross-section according to a kind of Pvd equipment of the third embodiment of the present invention.
Fig. 7 B is when utilizing the Pvd equipment of Fig. 7 A to carry out physical gas-phase deposition, the diagrammatic cross-section of this Pvd equipment.
Fig. 8 A to Fig. 8 B is according to the aligning of the first embodiment of the present invention on wafer or the flow process diagrammatic cross-section of superimposed groove deposit film.
Look synoptic diagram on Fig. 9 A to Fig. 9 D rotary magnetron device, wherein Fig. 9 A be among Fig. 5 the rotary magnetron device on look synoptic diagram, Fig. 9 B be among Fig. 7 A the rotary magnetron device on look synoptic diagram.
The simple symbol explanation
100,212: wafer
102,306,306a, 306b, 600a, 600b, 800a, 800b: film
104,304: opening
106: the rotation skew
200: reaction chamber
201: the electro-magnet magnetic control means
202: the target backboard
204: the crystal chip bearing pedestal
206: power supply unit
208: shadow shield
210: gas supply device
214: target
216,218: electromagnet group
216a, 216b, 218a, 218b: electro-magnet
300: substrate
301,303: the film offset direction
302: dielectric layer
500,700: the rotary magnetron device
502,504,702,704: magnet set
502a, 502b, 504a, 504b, 702a, 702b, 704a, 704b: electro-magnet
506,706: central shaft (symmetry axis)
Embodiment
In the following embodiments, be the N utmost point with first magnetic pole, and second magnetic pole is the S utmost point, be illustrated the present invention.Only those skilled in the art can know by inference easily, first magnetic pole and the second polar N utmost point and S extremely can exchange each other, so other embodiment opposite with the magnetic pole of following these embodiment omits explanation.
[first embodiment]
Shown in Fig. 2 A, it illustrates the diagrammatic cross-section according to a kind of Pvd equipment of the first embodiment of the present invention.
Please refer to Fig. 2 A, Pvd equipment of the present invention is made of reaction chamber and electro-magnet magnetic control means 201, and reaction chamber is made of with gas supply device 210 chamber 200, target backboard 202, crystal chip bearing pedestal 204, power supply device 206, shadow shield 208.
Wherein, shadow shield 208 is disposed at the sidewall and the bottom of chamber 200, and does not join with crystal chip bearing pedestal 204.In a preferred embodiment, this shadow shield 208 is as the usefulness of anode, and ground connection.In addition, crystal chip bearing pedestal 204 is disposed at the bottom of chamber 200, so that the placement of wafer 212 to be provided.
In addition, target backboard 202 is disposed at the top of chamber 200, and so that the placement of target 214 to be provided, and target backboard 202 is electrically connected with power supply unit 206.In a preferred embodiment, target backboard 202 is as the usefulness of negative electrode.In addition, target 214 its materials that are positioned over target backboard 20 for example are metals, and it is metallic substance such as titanium, cobalt, nickel, tantalum, tungsten, aluminium, copper for example.
In addition, gas supply device 210 is connected on the sidewall of chamber 200, enters in the chamber 200 so that plasma gas to be provided, and wherein plasma gas for example is a rare gas element, and it for example is an argon gas.In another preferred embodiment, chamber 200 also comprises with another gas supply device (not illustrating) and linking, enter in the chamber 200 so that reactant gas to be provided, and the reactant gas that is fed is different according to required technology.For example, if desire the depositing titanium nitride film, then target 214 can adopt titanium metal, and reactant gases then can adopt nitrogen.
In addition, electro-magnet magnetic control means 201 is disposed at outside the chamber 200, and is positioned on the target backboard 202.Look synoptic diagram as shown in Figure 4 on this electro-magnet magnetic control means 201, and the electro-magnet magnetic control means 201 shown in Fig. 2 A is the diagrammatic cross-section of Fig. 4 by I-I ' section gained.In the present embodiment, electro-magnet magnetic control means 201 comprises electromagnet group 216 and 218, wherein electromagnet group 216 for example is that electro-magnet 216a and 216b by two semicircular arcs constituted, and electromagnet group 218 also equally for example is that electro-magnet 218a and 218b by two semicircular arcs constituted.In addition, in the present embodiment, when a forward current was imported this electro-magnet magnetic control means 201, the N utmost point of electro-magnet 216a and 218b for example was to dispose up, and the N utmost point of electro-magnet 216b and 218a for example is to dispose down, and promptly the S utmost point up.What deserves to be mentioned is, because the magnetic pole of this electro-magnet magnetic control means 201 is decided by the sense of current of being imported, therefore when when carrying out physical gas-phase deposition, the sense of current of this electro-magnet magnetic control means 201 of counter-rotating input when participating in the cintest is so that it becomes a reversible circulation, and make the magnetic polarity reversal of electro-magnet magnetic control means 201, and then make the film offset direction that is present in physical gas-phase deposition originally reverse, be positioned at the asymmetric sedimentary problem of opening sidewalls with solution.
Utilize above-mentioned Pvd equipment to carry out being described in detail as follows of physical gas-phase deposition.
Please refer to Fig. 2 A, at first wafer 212 is placed on the crystal chip bearing pedestal 204 in the chamber 200, be ready for wafer 212 surfaces and go up deposit film.And the diagrammatic cross-section of aligning on the wafer 212 or superimposed groove as shown in Figure 3A, and it comprises silicon base 300, and is formed on the dielectric layer 302 in the substrate 300, and has an opening 304 in the dielectric layer 302.
Afterwards, on wafer 212, carry out first deposition step.Detailed description is to open electro-magnet magnetic control means 201 and power supply unit 210, and target backboard (electrode) 202 is bestowed a negative voltage, and make shadow shield 208 ground connection.Plasma gas in the chamber 200 (for example: argon gas) understand ionization, and bombard target 214 by Ionized gas (plasma body), and make that the atom on the target 214 is splashed out at this moment.The magnetic field that is produced owing to electro-magnet magnetic control means 201 is moved the plasma gas ion in a spiral manner, therefore at the beginning in a sedimentary film 306a direction 301 skews of opening 304 sidewalls institute, and formation asymmetric film as shown in Figure 3A.
Afterwards, please refer to Fig. 2 B, the magnetic pole of this electro-magnet magnetic control means 201 that reverses when participating in the cintest, carry out second deposition step, to finish the deposition of film 306, wherein film 306 is made of film 306a and film 306b, and the material of film 306b is identical with the material of film 306a.Detailed description is that counter-rotating is imported the sense of current of electro-magnet magnetic control means 201 so that it becomes a reversible circulation, and makes the N utmost point and the S umpolung of electro-magnet 216a, 216b, 218a and 218b.That is originally N utmost point electro-magnet 216a up and 218b are through behind the magnetic polarity reversal, and its S utmost point can be up, and originally the S utmost point up electro-magnet 216b and after 218a passed through magnetic polarity reversal, its N utmost point can be up.So can be so that electro-magnet magnetic control means 201 produce rightabout magnetic field, and then make the sedimentary film 306b of second deposition step institute towards reverse direction 303 skews, and form another the asymmetric film shown in Fig. 3 B.Because this two deposition steps institute its offset direction of sedimentary film is opposite, therefore can compensate the skew of film 306a originally towards the film 306b of other direction skew.So the film 306 that is made of film 306a and 306b is a symmetrical film being positioned at opening 304 sidewalls.
What deserves to be mentioned is that the first above-mentioned deposition step and second deposition step are the primary depositing circulation, and in another preferred embodiment, film 306 is formed with once above deposition cycle.
In addition, owing to film can have a skew along with the target life (Target Life) of physical gas-phase deposition, so in depositing operation, more can be by changing size of current to adjust the magneticstrength of electro-magnet magnetic control means, to reduce this side-play amount.
[second embodiment]
Shown in Figure 5, it illustrates the diagrammatic cross-section according to a kind of Pvd equipment of the second embodiment of the present invention.
Please refer to Fig. 5, Pvd equipment of the present invention is made of reaction chamber and rotary magnetron device 500, and reaction chamber is made of with gas supply device 210 chamber 200, target backboard 202, crystal chip bearing pedestal 204, power supply device 206, shadow shield 208.And for example identical about the configuration of each member in the reaction chamber with each member configuration among first embodiment, repeat no more in this.
In addition, rotary magnetron device 500 is disposed at outside the chamber 200, and is positioned on the target backboard 202.Look synoptic diagram on this rotary magnetron device 500 shown in Fig. 9 A, and rotary magnetron device 500 shown in Figure 5 is the diagrammatic cross-section of Fig. 9 A by II-II ' section gained.In the present embodiment, rotary magnetron device 500 comprises magnet set 502 and 504 formations, wherein magnet set 502 for example is that magnet 502a and 502b by two semicircular arcs constituted, and magnet set 504 also equally for example is that magnet 504a and 504b by two semicircular arcs constituted.In addition, magnet 502a and 504a dispose with the face symmetrical manner, and in the present embodiment, the symmetric plane of symmetry of this face is the central shaft 506 by target backboard 202 vertically, that is with section line II-II ' gained perpendicular to the plane of target backboard 202 as the plane of symmetry.Similarly, magnet 502b and 504b also dispose with the face symmetrical manner.In addition, in the present embodiment, the N utmost point of magnet 502a and 504b for example is to dispose up, and the N utmost point of magnet 502b and magnet 504a for example is to dispose down, and promptly the S utmost point up.What deserves to be mentioned is, because when carrying out physical gas-phase deposition, this rotary magnetron device 500 can carry out the rotation of 360n degree (this n value is a positive integer) along the central shaft 506 of target backboard 202.So the field direction that rotary magnetron device 500 is produced also can rotate simultaneously, and then making the offset direction of thin film deposition rotate, this magnetic control means whenever revolves this asymmetric sedimentary phenomenon of three-sixth turn and just can offset therefore and can obtain having symmetric film in opening sidewalls.
Utilize above-mentioned Pvd equipment to carry out being described in detail as follows of physical gas-phase deposition.
Please refer to Fig. 5, at first wafer 212 is placed on the crystal chip bearing pedestal 204 in the chamber 200, be ready for wafer 212 surfaces and go up deposit film.And the diagrammatic cross-section of aligning on the wafer 212 or superimposed groove as shown in Figure 6A, and it comprises silicon base 300, and is formed on the dielectric layer 302 in the substrate 300, and has an opening 304 in the dielectric layer 302.
Afterwards, on wafer 212, carry out depositing operation.Detailed description is, opens rotary magnetron device 500 and power supply unit 210, so that plasma gas ionization (plasma body), and these Ionized plasma gass can bombard target 214, and make that the atom on the target 214 is splashed out.Because the magnetic field that rotary magnetron device 500 is produced is moved the plasma gas ion in a spiral manner, therefore can produce skew in the sedimentary film 600a of opening 304 sidewalls at the beginning, and forms asymmetric film as shown in Figure 6A.But, because this rotary magnetron device 500 can be the rotation that rotation center carries out 360n degree (this n value is a positive integer) simultaneously with the central shaft 506 of target backboard 202 in the process of depositing operation, be this rotary magnetron device 500 after depositing operation is finished, can get back to original position.Therefore, the field direction that rotary magnetron device 500 is produced can be simultaneously in the process of depositing operation rotation, and then make the offset direction rotation of thin film deposition, so can obtain the symmetric film 600b that has shown in Fig. 6 B in opening 304 sidewalls.
What deserves to be mentioned is that though only be illustrated the present invention with the rotary magnetron device 500 of Fig. 9 A in a second embodiment, only the present invention is not limited to this.That is, then all can obtain the symmetric film 600b that has shown in Fig. 6 B in opening 304 sidewalls as long as the magnet set of rotary magnetron device 500 is disposed on the target backboard 202 with the face symmetrical manner.
[the 3rd embodiment]
Shown in Fig. 7 A, it illustrates the diagrammatic cross-section according to a kind of Pvd equipment of the third embodiment of the present invention.
Please refer to Fig. 7 A, Pvd equipment of the present invention is made of reaction chamber and rotary magnetron device 700, and reaction chamber is made of with gas supply device 210 chamber 200, target backboard 202, crystal chip bearing pedestal 204, power supply device 206, shadow shield 208.And for example identical about the configuration of each member in the reaction chamber with the configuration of each member among first embodiment, repeat no more in this.
In addition, rotary magnetron device 700 is disposed at outside the chamber 200, and is positioned on the target backboard 202.Look synoptic diagram on this rotary magnetron device 700 shown in Fig. 9 B, and the rotary magnetron device 700 shown in Fig. 7 A is the diagrammatic cross-section of Fig. 9 B by III-III ' section gained.In the present embodiment, rotary magnetron device 700 comprises magnet set 702 and 704 formations, wherein magnet set 702 for example is that magnet 702a and 702b by two semicircular arcs constituted, and magnet set 704 is made of arcual magnet 704a of two hemicycles and 704b.In addition, magnet 702a and 704a dispose in axisymmetric mode, and in the present embodiment, are symmetry axis with vertical central shaft 706 by target backboard 202.Similarly, magnet 702b and 704b also dispose in axisymmetric mode.In addition, in the present embodiment, the N utmost point of magnet 702a and 704b for example is to dispose up, and the N utmost point of magnet 702b and magnet 704a for example is to dispose down, and promptly the S utmost point up.What deserves to be mentioned is, because when carrying out physical gas-phase deposition, this rotary magnetron device 700 can carry out the rotation of 180n degree (this n value is a positive integer) along the central shaft 706 of target backboard 202.Therefore the field direction that produced of rotary magnetron device 700 also can rotate simultaneously, and then makes and the offset direction rotation of thin film deposition therefore can obtain having symmetric film in opening sidewalls.
What deserves to be mentioned is that the magnet set 702 of this rotary magnetron device 700 and 704 distributing style also can use horseshoe-shaped magnet 702a, 702b, 704a and 704b except the distributing style as Fig. 9 B, and constitute configuration as Fig. 9 C or Fig. 9 D.Certainly, other suitable distributing style is also arranged, that is as long as magnet set is disposed on the target backboard 202 and can obtains having symmetric film in opening sidewalls in axisymmetric mode.
Utilize above-mentioned Pvd equipment to carry out being described in detail as follows of physical gas-phase deposition.
Please refer to Fig. 7 A, at first wafer 212 is placed on the crystal chip bearing pedestal 204 in the chamber 200, be ready for wafer 212 surfaces and go up deposit film.And the diagrammatic cross-section of aligning on the wafer 212 or superimposed groove is shown in Fig. 8 A, and it comprises silicon base 300, and is formed on the dielectric layer 302 in the substrate 300, and has an opening 304 in the dielectric layer 302.
Afterwards, on wafer 212, carry out depositing operation.Detailed description is, opens rotary magnetron device 600 and power supply unit 210, so that plasma gas ionization (plasma body), and these Ionized plasma gass can bombard target 214, and make that the atom on the target 214 is splashed out.Because the magnetic field that rotary magnetron device 700 is produced makes plasma gas ion mobile route in a spiral manner, therefore can produce skew in the sedimentary film 800a of opening 304 sidewalls at the beginning, and form the asymmetric film shown in Fig. 8 A.But, because this rotary magnetron device 700 can be the rotation that rotation center carries out 180n degree (this n value is a positive integer) simultaneously with the central shaft 706 of target backboard 202 in the process of depositing operation, the magnet set 702 that is this rotary magnetron device 700 is after depositing operation is finished, can get back to the position of magnet set 704 originally, and magnet set 704 can be got back to the position (shown in Fig. 7 B) of magnet set 702 originally.Therefore, the field direction that is produced behind rotary magnetron device 700 every Rotate 180 degree is rotation simultaneously in the process of depositing operation, and then make the offset direction rotation of thin film deposition, so can obtain the symmetric film 800b that has shown in Fig. 8 B in opening 304 sidewalls.
What deserves to be mentioned is, though in the 3rd embodiment only the rotary magnetron device 700 with Fig. 9 B be illustrated the present invention, only the present invention is not limited to this.That is, then all can obtain the symmetric film 800b that has shown in Fig. 8 B in opening 304 sidewalls as long as the magnet set of rotary magnetron device 700 is disposed on the target backboard 202 in axisymmetric mode.
In sum, the present invention has following advantage at least:
1, when when carrying out physical gas-phase deposition, utilize the Pvd equipment with electro-magnet magnetic control means of the present invention, can be in the process of depositing operation, the magnetic pole of this electro-magnet magnetic control means when participating in the cintest reverses, and then the asymmetric sedimentary offset direction of reversible film, therefore can solve the asymmetric sedimentary problem of film in the opening sidewalls place.
2, when carrying out physical gas-phase deposition, utilize the Pvd equipment with rotary magnetron device of the present invention, can be in the process of depositing operation, rotate the magnetic pole of this magnet magnetic control means simultaneously, and then the asymmetric sedimentary offset direction of rotating thin film, therefore can solve the asymmetric sedimentary problem of film in the opening sidewalls place.
3, utilize the present invention to carry out the plain conductor definition process, do not need as prior art, for remedy because of in the photoetching process because of the skew of alignment mark and superimposed mark, and solve the problem that this skew is caused in the compensation correction value of taking to adjust superimposed skew individually, therefore can be so that technology is more easy.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (15)
1, a kind of Pvd equipment comprises:
One reaction chamber; And
One electro-magnet magnetic control means is disposed at above the outside of this reaction chamber, wherein when when carrying out a physical gas-phase deposition, and the magnetic pole of this electro-magnet magnetic control means that reverses when participating in the cintest.
2, Pvd equipment as claimed in claim 1, wherein this electro-magnet magnetic control means comprises a plurality of electromagnet group.
3, Pvd equipment as claimed in claim 1, wherein this reaction chamber comprises:
One chamber;
One target backboard is disposed at the top of this chamber; And
One crystal chip bearing pedestal is disposed at the bottom of this reaction chamber.
4, a kind of physical gas-phase deposition comprises:
One reaction chamber is provided, and the outside top of this reaction chamber disposes an electro-magnet magnetic control means;
Start this electro-magnet magnetic control means, carry out one first deposition step; And
The reverse magnetic pole of this electro-magnet magnetic control means carries out one second deposition step, to finish a depositing of thin film.
5, physical gas-phase deposition as claimed in claim 4, wherein this first deposition step and this second deposition step are the primary depositing circulation, and this film is formed with this once above deposition cycle.
6, physical gas-phase deposition as claimed in claim 4 also comprises by changing size of current to adjust the magneticstrength of this electro-magnet magnetic control means, to reduce this film along with the existing side-play amount of the target life of this physical gas-phase deposition.
7, physical gas-phase deposition as claimed in claim 4, wherein this electro-magnet magnetic control means comprises a plurality of electromagnet group.
8, a kind of Pvd equipment comprises:
One reaction chamber; And
One rotary magnetron device is disposed at the outside top of this reaction chamber, and wherein this rotary magnetron device comprises at least two magnet set, and those magnet set are with rotational symmetry or the configuration of face symmetrical manner, but magnetic pole is opposite.
9, Pvd equipment as claimed in claim 8, wherein this reaction chamber comprises:
One chamber;
One target backboard is disposed at the top of this chamber; And
One crystal chip bearing pedestal is disposed at the bottom of this reaction chamber.
10, Pvd equipment as claimed in claim 9, wherein this axisymmetric symmetry axis or the symmetric plane of symmetry of this face are by the central shaft of this target backboard, and when carrying out a physical gas-phase deposition, this rotary magnetron device can be along this central shaft rotation.
11, Pvd equipment as claimed in claim 8, wherein a wherein magnet set of this two magnet set comprises one first magnet and one second magnet, and another magnet set comprises one the 3rd magnet and one the 4th magnet, and this first magnet and the 3rd magnet dispose in axisymmetric mode, this second magnet and the 4th magnet dispose in axisymmetric mode, and first magnetic pole of this first magnet and the 4th magnet is opposite with the first polar configuration direction of this second magnet and the 3rd magnet.
12, Pvd equipment as claimed in claim 8, wherein a wherein magnet set of this two magnet set comprises one first magnet and one second magnet, and another magnet set comprises one the 3rd magnet and one the 4th magnet, and this first magnet and the 3rd magnet dispose with the face symmetrical manner, this second magnet and the 4th magnet are with the configuration of face symmetrical manner, and first magnetic pole of this first magnet and the 4th magnet is opposite with the first polar configuration direction of this second magnet and the 3rd magnet.
13, a kind of physical gas-phase deposition comprises:
One reaction chamber is provided, and the outside top of this reaction chamber disposes a rotary magnetron device, and wherein this rotary magnetron device comprises at least two magnet set, and those magnet set are with rotational symmetry or the configuration of face symmetrical manner; And
Start this rotary magnetron device, to carry out a depositing operation, wherein in the process of this depositing operation, this rotary magnetron device is rotated simultaneously.
14, physical gas-phase deposition as claimed in claim 13, wherein those magnet set dispose in the rotational symmetry mode, and also in the process of depositing operation, this rotary magnetron device Rotate 180 n degree, this n is a positive integer.
15, physical gas-phase deposition as claimed in claim 13, wherein those magnet set are with the face symmetrical arrangement, and also in the process of depositing operation, this rotary magnetron device rotation 360n degree, this n is a positive integer.
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| CNB2004100682736A CN100392146C (en) | 2004-08-27 | 2004-08-27 | Physical vapor deposition process and apparatus |
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| CNB2004100682736A CN100392146C (en) | 2004-08-27 | 2004-08-27 | Physical vapor deposition process and apparatus |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102094173A (en) * | 2009-12-11 | 2011-06-15 | 核工业西南物理研究院 | In-situ plasma Ti/Cu composite coating plating process |
| CN114921764A (en) * | 2022-06-28 | 2022-08-19 | 松山湖材料实验室 | Device and method for high-power pulse magnetron sputtering |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100855512B1 (en) * | 2001-04-24 | 2008-09-02 | 토소우 에스엠디, 인크 | Target and method of optimizing target profile |
| CN1155734C (en) * | 2002-05-27 | 2004-06-30 | 长沙力元新材料股份有限公司 | Process and apparatus for preparing porous metal by combined physical gas-phase deposition techinque |
| DE10232179B4 (en) * | 2002-07-16 | 2009-01-08 | Qimonda Ag | PVD |
| KR20040026733A (en) * | 2002-09-25 | 2004-04-01 | 주식회사 피앤아이 | Method and Apparatus for Formation of Thick Layer on the Surface Modified Substrate |
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2004
- 2004-08-27 CN CNB2004100682736A patent/CN100392146C/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102094173A (en) * | 2009-12-11 | 2011-06-15 | 核工业西南物理研究院 | In-situ plasma Ti/Cu composite coating plating process |
| CN114921764A (en) * | 2022-06-28 | 2022-08-19 | 松山湖材料实验室 | Device and method for high-power pulse magnetron sputtering |
| CN114921764B (en) * | 2022-06-28 | 2023-09-22 | 松山湖材料实验室 | Device and method for high-power pulse magnetron sputtering |
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| CN100392146C (en) | 2008-06-04 |
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