CN1670240A - Physical vapor deposition method and device therefor - Google Patents
Physical vapor deposition method and device therefor Download PDFInfo
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- CN1670240A CN1670240A CN 200410039679 CN200410039679A CN1670240A CN 1670240 A CN1670240 A CN 1670240A CN 200410039679 CN200410039679 CN 200410039679 CN 200410039679 A CN200410039679 A CN 200410039679A CN 1670240 A CN1670240 A CN 1670240A
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Abstract
Physical vapor deposition equipment includes a reaction room, a target notum, a chip bearing base, a target and a mobile magnetic control means, wherein the target notum is equipped on the top of the reaction room, and the chip bearing base at the bottoms. Moreover, the target settles on the surface of the target notum, which is corresponding to the chip bearing base. And the mobile magnetic control means position outside the reaction room and upward to the target. By means of adjusting the position of mobile magnetic control means in the physical vapor deposition manufacturing technique via this equipment, the distance between the polar of the control means and target bombarding plane can be sustained consistently, so the magnetic density inducted by the target bombarding plane can be kept consistently.
Description
Technical field
The present invention relates to a kind of semiconductor fabrication process and equipment thereof, particularly relate to a kind of physical vapor deposition (Physical Vapor Deposition is called for short PVD) manufacturing process and equipment thereof.
Background technology
In semiconductor fabrication process, the formation method of film includes methods such as physical vaporous deposition or chemical Vapor deposition process, and physical vaporous deposition can be divided into vapour deposition method (Evaporation) and two kinds of forms of sputtering method (Sputtering).Wherein, evaporation heats vapor deposition source, and the saturation vapour pressure that utilizes vapor deposition source to be possessed when high temperature carries out depositing of thin film.Sputter then is ion bombardment (Ion Bombardment) target (Target) that utilizes in the plasma body to be produced, and makes the atom on the target be splashed out, and then can be deposited into after these atoms that splashed out and form film in the substrate.
It should be noted that, in sputter procedure, (for example: the argon gas ion) how much generation has a confidential relation because the generation of plasma body and plasma gas ion, just have what of high-octane electronics and plasma gas atomic collision probability, obviously influence the carrying out of sputter behavior.So for the probability that improves the plasma gas atomizing/ionizing (also claiming to splash rate (Sputtering Yield)), preferred mode is exactly that the distance that allows electronics be passed through before the plasma disappearance is elongated.The method of general normal employing at present is magnetron sputtering (Magnetron Sputtering) method, its target top in plasma-reaction-chamber, additional configuration one rotary magnetron (Rotatable Magnetron) device, so can influence moving of charged particle by the magnetic field that this magnetic control means produced, and then move it path generation deviation, and present screw type moving.So, can significantly improve plasma gas atomic collision free probability by the configuration of this magnetic control means, and then improve it and splash rate.And the lifting that splashes rate can be so that operation magnetic controlled plasma required vacuum tightness can maintain the scope lower than traditional direct-current plasma, and then more can control itself characteristic of deposit film.
Yet, because this magnetic control means is to be fixed on the target, and along with the deposition manufacturing process is constantly carried out, the thickness of target is with attenuation gradually, therefore target material surface therewith the distance between the magnetic control means will little by little shorten, so will cause its magneticstrength of being sensed of target bombardment face enhanced problem gradually, and then cause asymmetric (Asymmetry) deposition degree aggravation as shown in Figure 1.Shown in Figure 1, be to illustrate existing a kind of magnetic control d.c. sputtering that utilizes in the lithography alignment of wafer or the synoptic diagram of the part of the groove in superimposition marker deposit film.As shown in Figure 1, because its magneticstrength of being sensed of target bombardment face can't be consistent, so can influence the splash angle of plasma gas ion for target, and then make sedimentary film 102 on wafer 100, it produces asymmetric sedimentary problem being positioned at opening 104 sidewalls.And, the film skew (Shift) that this asymmetric deposition caused, for the different positions thin film deposition on the wafer 100, its offset direction also is not quite similar.Just, the problem that its magneticstrength of being sensed of this target bombardment face can't be consistent can influence plasma gas ionic mobile route, and then the problem that makes the skew (RotationShift) (shown in label 106) of the sedimentary film 102 generation sense of rotation of institute on the wafer 100.
In addition, the aluminium conductor manufacturing process in the interconnect manufacturing process also can utilize the magnetic control d.c. sputtering to finish.And; can accurately aim in order to ensure formed aluminium conductor with contact hole; therefore after the aluminium conductor material layer is deposited on wafer comprehensively; usually can be to carrying out the measurement and the comparison of the alignment mark position and the mark that coincides after photoresist layer after the definition aluminium conductor exposure and the etching, coincide with the contact hole or the connector (Plug) of lower floor accurately to determine aluminium conductor.If skew to some extent compensates correction in the time of can exposing to the photoresist layer that defines aluminium conductor next time.Because the measurement of the aligning or the mark that coincides is to locate according to the interface of the different brightness that difference of height presents of mark, when metal after asymmetric deposition as the recess sidewall both sides, just can be offset to some extent according to the resulting center position of groove difference of height again, because this asymmetric deposition can be along with the consumption of target, side-play amount is increasing.Certainly, though industry produces the problem of skew for lithographic fabrication processes at present, can solve by some set-up procedures, but since each deposition machine and each time drift condition all be not quite similar, so this method is not to be an effective solution.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of physical vapor deposition manufacturing process and equipment thereof exactly, with when carrying out the physical vapor deposition manufacturing process, the magneticstrength that target bombardment face is sensed can be consistent, so that sedimentary film has identical asymmetric sedimentary degree.
Another object of the present invention is providing a kind of physical vapor deposition manufacturing process and equipment thereof exactly so that sedimentary film keep identical sedimentary asymmetry being positioned at the opening sidewalls place.
The present invention proposes a kind of Pvd equipment, and this depositing device is made of a reaction chamber, a target backboard, a crystal chip bearing pedestal, a target and a portable magnetic control (Magnetron) device.Wherein, the target backboard is disposed at the top of reaction chamber.In addition, the crystal chip bearing base configuration is in the bottom of reaction chamber.In addition, target is disposed on the surface of target backboard, and relative with the crystal chip bearing pedestal.In addition, portable magnetic control means is disposed at outside the reaction chamber, and be positioned at the target top, and when carrying out the physical vapor deposition manufacturing process, can be by the position of adjusting this portable magnetic control means, and the magnetic pole of this portable magnetic control means and the distance that target bombards between (Bombardment) face are consistent.
The present invention proposes another Pvd equipment, and this depositing device is made of a reaction chamber, a target backboard, a crystal chip bearing pedestal, a target and an electromagnet type magnetic control means.Wherein, the target backboard is disposed at the top of reaction chamber.In addition, the crystal chip bearing base configuration is in the bottom of reaction chamber.In addition, target is disposed on the surface of target backboard, and relative with the crystal chip bearing pedestal.In addition, the electromagnet type magnetic control means is disposed at outside the reaction chamber, and is positioned at the target top, and when carrying out the physical vapor deposition manufacturing process, can be by the strength of current of adjusting the electromagnet type magnetic control means, and the magneticstrength that target bombardment face is sensed is consistent.
The present invention proposes a kind of physical gas-phase deposite method, and this method provides a plasma body reaction chamber earlier, and this plasma body reaction chamber comprises and disposes portable magnetic control means, target, target backboard, crystal chip bearing pedestal and power supply unit.Wherein, target is positioned on the surface of target backboard, and with the crystal chip bearing pedestal, and portable magnetic control means is positioned at outside the reaction chamber, and is positioned at the target top, and target backboard and power supply unit electric connection.Then, on the crystal chip bearing pedestal, place wafer.Then, start this power supply unit, and start portable magnetic control means, with deposit film on wafer.And, in the process of deposit film,, and make the magnetic pole of portable magnetic control means and the distance between the target bombardment face be consistent by the position of adjusting portable magnetic control means.
The present invention proposes another physical gas-phase deposite method, and this method provides a plasma body reaction chamber earlier, and this plasma body reaction chamber comprises and disposes electromagnet type magnetic control means, target, target backboard, crystal chip bearing pedestal and power supply unit.Wherein, target is positioned on the surface of target backboard, and with the crystal chip bearing pedestal, and the electromagnet type magnetic control means is positioned at outside the reaction chamber, and is positioned at the target top, and target backboard and power supply unit electric connection.Then, on the crystal chip bearing pedestal, place wafer.Then, start this power supply unit, and start the electromagnet type magnetic control means, with deposit film on wafer.And in the process of deposit film, by the strength of current of adjusting the electromagnet type magnetic control means, and the magneticstrength that target bombardment face is sensed is consistent.
The present invention proposes another kind of physical gas-phase deposite method, and this method produces an electric field and a magnetic field in a plasma body reaction chamber, to carry out depositing operation.Wherein, when carrying out this depositing operation, strength of electric field in this plasma body reaction chamber is E, the magneticstrength that its bombardment face of target in this plasma body reaction chamber is sensed is B, and this deposition plasma gas ionic carried charge that manufacturing process produced is q, quality is m, and translational speed is v, and its relational expression is as follows:
Wherein, F is the Lorentz power at target bombardment face place, and when carrying out this deposition manufacturing process, the Lorentz power (F) that the plasma gas ion at this target bombardment face place is experienced is consistent.
Because Pvd equipment of the present invention has portable magnetic control means or electromagnet type magnetic control means, so when utilizing this depositing device to carry out physical gas-phase deposition, can be by the position of adjusting portable magnetic control means or the strength of current of adjustment electro-magnet magnetic control means, and the magneticstrength that makes target bombardment face sense can be consistent, and then the Lorentz that can make the plasma gas ion at target bombardment face place be experienced tries hard to keep and holds unanimity.Therefore, utilize method of the present invention and equipment thereof can make in the asymmetric process that is deposited on whole target consumption and keep the asymmetric deposition degree of fixed, make in follow-up lithographic fabrication processes, because of the aligning that asymmetric sputter produced and the marking bias that coincides remain fixed value.
Description of drawings
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. elaborate.In the accompanying drawing:
Fig. 1 is that existing a kind of magnetic control d.c. sputtering that utilizes is in the lithography alignment of wafer or the synoptic diagram of the part of the groove in superimposition marker deposit film.
Fig. 2 is the diagrammatic cross-section according to a kind of Pvd equipment of one embodiment of the present invention.
When Fig. 3 utilizes the Pvd equipment of Fig. 2 to carry out the physical vapor deposition manufacturing process, the diagrammatic cross-section of this Pvd equipment.
Fig. 4 is according to the aligning of a preferred embodiment of the present invention on wafer or the diagrammatic cross-section of the groove deposit film that coincides.
The simple symbol explanation
100,220: wafer
102,306: film
104,304: opening
106: the rotation skew
200: reaction chamber
201: target bombardment face
202: the target backboard
204: the crystal chip bearing pedestal
206: target
208: magnetic control means
210: power supply unit
212: shadow shield
214: gas supply device
216: magnet
218: magnetic axis
300: substrate
302: dielectric layer
D: distance
Embodiment
Shown in Figure 2, it illustrates the diagrammatic cross-section according to a kind of Pvd equipment of one embodiment of the present invention.
Please refer to Fig. 2, Pvd equipment of the present invention is made of with gas supply device 214 reaction chamber 200, target backboard 202, crystal chip bearing pedestal 204, target 206, magnetic control (Magnetron) device 208, power supply device 210, shadow shield 212, and magnetic control means 208 is by several magnet 216 and 218 formations of magnetic axis (Magnet Axle).
Wherein, shadow shield 212 is disposed at the sidewall and the bottom of reaction chamber 200, and does not join with crystal chip bearing pedestal 204.In a preferred embodiment, this shadow shield 212 is as the usefulness of anode, and ground connection.In addition, target backboard 202 is disposed at the top of reaction chamber 200, and electrically connects with power supply unit 210.In a preferred embodiment, target backboard 202 is as the usefulness of negative electrode.In addition, crystal chip bearing pedestal 204 is disposed at the bottom of reaction chamber 200, so that the placement of wafer 220 to be provided.
In addition, target 206 is disposed on the surface of target backboard 202, and relative with crystal chip bearing pedestal 204.Wherein, the material of target 206 for example is a metal targets, and it is metal materials such as titanium, cobalt, nickel, tantalum, tungsten, aluminium, copper for example.
In addition, magnetic control means 208 is disposed at outside the reaction chamber 200, and is positioned at target 206 tops.What deserves to be mentioned is, in a preferred embodiment, this magnetic control means 208 is one to move up and down formula rotary magnetron device, therefore when utilizing this Pvd equipment to carry out the physical vapor deposition manufacturing process, can adjust the position of magnetic control means 208 along magnetic axis 218 up and down, and make being consistent apart from d between bombardment (Bombardment) face 201 of the magnetic pole of magnetic control means 208 and target 206, and then the magneticstrength that makes target bombardment face 201 be sensed can be consistent.In addition, in another preferred embodiment, this magnetic control means 208 is an electromagnet type rotary magnetron device, therefore when utilizing this Pvd equipment to carry out the physical vapor deposition manufacturing process, can be by the strength of current of adjusting magnetic control means 208, and the magneticstrength that target bombardment face 201 is sensed is consistent.
In addition, gas supply device 214 is connected on the sidewall of reaction chamber 200, enters in the reaction chamber 200 so that plasma gas to be provided, and wherein plasma gas for example is a rare gas element, and it for example is an argon gas.In another preferred embodiment, reaction chamber 200 also comprises with another gas supply device (not illustrating) and linking, enter in the reaction chamber 200 so that reactant gas to be provided, and the reactant gas that is fed is different according to required method.For example, if desire the depositing titanium nitride film, then target 206 can adopt titanium metal, and reactant gases then can adopt nitrogen.
Utilize above-mentioned Pvd equipment to carry out being described in detail as follows of physical vapor deposition manufacturing process.
Please refer to Fig. 2, at first wafer 220 is placed on the crystal chip bearing pedestal 204 in the reaction chamber 200, be ready for wafer 220 surfaces and go up deposit film.And the diagrammatic cross-section of aligning on the wafer 220 or the groove that coincides as shown in Figure 4, and it comprises silicon base 300, and is formed on the dielectric layer 302 in the substrate 300, and has an opening 304 in the dielectric layer 302.
Afterwards, on wafer 220, carry out the thin film deposition manufacturing process.Detailed description is, power-on supply 210, bestow a negative voltage with counter electrode 202, and make shadow shield 212 ground connection, and make in the reaction chamber 200 the plasma gas ionization (for example: argon gas), and bombard target 206 by Ionized gas (plasma body), and make that the atom on the target 206 is splashed out.In addition, rotary magnetron device 208 will be promoted the Ionized rate that splashes of plasma gas, and then increase plasma density.
What deserves to be mentioned is, in a preferred embodiment, if this magnetic control means 208 1 moves up and down formula rotary magnetron device, then when carrying out the thin film deposition manufacturing process, can adjust the position of magnetic control means 208 along magnetic axis 218 up and down at any time, and make being consistent between the pole surface of magnetic control means 208 and the target bombardment face 201 apart from d, to solve the problem that magneticstrength that existing target bombardment face 201 sensed can't be consistent, its detailed description please be as follows.
Please refer to Fig. 3, along with on the wafer 220 the thickness of sedimentary film more and more thick and the sedimentary wafer sheet number of institute is more and more, the thickness of target 206 can be relatively more and more thin, the magneticstrength that so can make target bombardment face 201 be sensed is more and more strong.Yet, in the present invention, can adjust the position of magnetic control means 208 at any time up and down along magnetic axis 218, and make magnetic control means 208 and target bombard being consistent between the face 201, and then the magneticstrength that makes target bombardment face 201 be sensed is consistent apart from d.And when carrying out the thin film deposition manufacturing process, the magneticstrength that target bombardment face 201 is sensed is consistent, and the Lorentz lorentz (Lorentz) who also represents target bombardment face place simultaneously tries hard to keep and holds unanimity, and its relational expression is as follows:
Wherein, F is the Lorentz power that the plasma gas ion at target bombardment face place is experienced, and q is the plasma gas ionic carried charge that is produced, and m is its quality, and v is its translational speed,
And B is the magneticstrength that target bombardment face 201 is sensed, and E represents the electric field between two electrodes (202 and 212).
Please refer to Fig. 4, owing to, can adjust the position of magnetic control means 208 up and down, and the magneticstrength that makes target bombardment face 201 be sensed is consistent in the Cheng Qian of crossing of carrying out thin film deposition.Therefore, the deposition of the sedimentary film 306 asymmetric degree that can be maintained fixed at the sidewall that is positioned at opening 304, can not consume and not make asymmetric deposition aggravation along with target 206.
In another preferred embodiment, if this magnetic control means 208 is an electromagnet type rotary magnetron device, then can be by the strength of current of adjusting magnetic control means 208, solve the problem that magneticstrength that existing target bombardment face 201 sensed can't be consistent.In other words, though along with on the wafer 220 the thickness of sedimentary film more and more thick and the sedimentary wafer sheet number of institute is more and more, the thickness of target 206 can be relatively more and more thin, but in the present invention, can be by the adjustment of the strength of current of magnetic control means 208, and magneticstrength is changed, and then the magneticstrength that makes target bombardment face 201 be sensed is consistent at any time, so can make Lorentz try hard to keep and hold unanimity.Therefore, the deposition of the sedimentary film 306 asymmetric degree that also can be maintained fixed at the sidewall that is positioned at opening 304, can not make asymmetric deposition aggravation along with the consumption of target 206.
In sum, physical vapor deposition of the present invention and equipment thereof have following advantage at least:
1. because Pvd equipment of the present invention has movable type or electromagnet type magnetic control means, so when utilizing this depositing device to carry out the physical vapor deposition manufacturing process, can be by the position of adjusting portable magnetic control means or the strength of current of electromagnet type magnetic control means, and the magneticstrength that makes target bombardment face sense can be consistent, and then the Lorentz that can make the plasma gas ion at target bombardment face place be experienced tries hard to keep and holds unanimity.Therefore, utilize method of the present invention and equipment thereof promptly can not produce existing asymmetric deposition makes asymmetric deposition degree aggravation along with target consumption problem.
2. owing to the magneticstrength of utilizing its target bombardment face of physical vapor deposition of the present invention and equipment thereof to sense can be consistent, so asymmetric sedimentary degree can keep certain in the process that target consumes.Therefore, for plain conductor definition manufacturing process, can guarantee when the definition lead, to have the preferred alignment tolerance range.And, utilize the present invention to carry out plain conductor definition manufacturing process, do not need as existing, for remedy because of in the lithographic fabrication processes because of the skew of the alignment mark and the mark that coincides, and in taking indivedual compensation correction values of adjusting the skew that coincides to solve the problem that this skew is caused, therefore can be so that manufacturing process is more easy.
3. Pvd equipment of the present invention and method thereof are not limited to above-mentioned disclosed content.In other words, in the physical vapor deposition manufacturing process, if the strength of electric field (B) that the strength of electric field (E) of reaction chamber, target bombardment face are sensed and plasma gas ionic correlation parameter (q, m and the v) target of gained bombard the Lorentz power that the plasma gas ion at face place experienced can maintain definite value, then sedimentary film have sedimentary asymmetry too and in the target consumption process, keep certain advantage.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (19)
1. Pvd equipment comprises:
One reaction chamber;
One target backboard is disposed at the top of this reaction chamber;
One crystal chip bearing pedestal is disposed at the bottom of this reaction chamber;
One target is disposed on the surface of this target backboard, and relative with this crystal chip bearing pedestal; And
One portable magnetic control means, be disposed at outside this reaction chamber, and be positioned at this target top, and when carrying out a physical vapor deposition manufacturing process, can be by the position of adjusting this movable type magnetic control means, and the magnetic pole of this movable type magnetic control means and the distance between the target bombardment face are consistent.
2. Pvd equipment as claimed in claim 1 also comprises a power supply device, and it is electrically connected with this target backboard.
3. Pvd equipment as claimed in claim 1 should the movable type magnetic control means be a portable rotary magnetron device wherein.
4. Pvd equipment as claimed in claim 1 also comprises a gas supply device.
5. Pvd equipment comprises:
One reaction chamber;
One target backboard is disposed at the top of this reaction chamber;
One crystal chip bearing pedestal is disposed at the bottom of this reaction chamber;
One target is disposed on the surface of this target backboard, and relative with this crystal chip bearing pedestal; And
One electromagnet type magnetic control means, be disposed at outside this reaction chamber, and be positioned at this target top, and when carrying out a physical vapor deposition manufacturing process, can be by the strength of current of adjusting this electromagnet type magnetic control means, and the magneticstrength that this target bombardment face is sensed is consistent.
6. Pvd equipment as claimed in claim 5 also comprises a power supply device, and itself and this target backboard electrically connects.
7. Pvd equipment as claimed in claim 5, wherein this electromagnet type magnetic control means is an electromagnet type rotary magnetron device.
8. Pvd equipment as claimed in claim 5 also comprises a gas supply device.
9. physical gas-phase deposite method comprises:
One plasma body reaction chamber is provided, this plasma body reaction chamber comprises and disposes a portable magnetic control means, a target, a target backboard, a crystal chip bearing pedestal and a power supply unit, wherein this target is positioned on the surface of this target backboard, and it is relative with this crystal chip bearing pedestal, and should be positioned at outside this reaction chamber by the movable type magnetic control means, and be positioned at this target top, and this target backboard and this power supply unit electrically connect;
On this crystal chip bearing pedestal, place a wafer; And
Start this power supply unit, and start this movable type magnetic drawing device, with deposition one film on this wafer, and in the Cheng Qian of crossing that deposits this film, by the position of adjusting this movable type magnetic control means, and make the magnetic pole of this movable type magnetic control means and the distance between the target bombardment face be consistent.
10. physical gas-phase deposite method as claimed in claim 9, wherein in the process of this film of deposition, its carried charge of plasma gas ion that is produced is q, quality is m, translational speed is v, and the magneticstrength that this target bombardment face is sensed is B, and the strength of electric field of this plasma body reaction chamber is E, and its relational expression is as follows:
Wherein, F is a Lorentz power, and in the process of this film of deposition, the Lorentz that the plasma gas ion at this target bombardment face place is experienced tries hard to keep and holds unanimity.
11. physical gas-phase deposite method as claimed in claim 10, the plasma gas ion that wherein this deposition method produced comprises an inert gas ion.
12. physical gas-phase deposite method as claimed in claim 11, wherein this inert gas ion comprises argon gas ion.
13. a physical gas-phase deposite method comprises:
One plasma body reaction chamber is provided, this plasma body reaction chamber comprises and disposes an electromagnet type magnetic control means, a target, a target backboard, a crystal chip bearing pedestal and a power supply unit, wherein this target is positioned on the surface of this target backboard, and it is relative with this crystal chip bearing pedestal, and this electromagnet type magnetic control means is positioned at outside this reaction chamber, and be positioned at this target top, and this target backboard and this power supply unit electrically connect;
On this crystal chip bearing pedestal, place a wafer; And
Start this power supply unit, and start this electromagnet type magnetic control means, with deposition one film on this wafer, and in the Cheng Qian of crossing that deposits this film, by the strength of current of adjusting this electromagnet type magnetic control means, and the magneticstrength that this target bombardment face is sensed is consistent.
14. physical gas-phase deposite method as claimed in claim 13, wherein in the process of this film of deposition, its carried charge of plasma gas ion that is produced is q, quality is m, translational speed is v, and the magneticstrength that this target bombardment face is sensed is B, and the strength of electric field of this plasma body reaction chamber is E, and its relational expression is as follows:
Wherein, F is a Lorentz power, and in the process of this film of deposition, the Lorentz that the plasma gas ion at this target bombardment face place is experienced tries hard to keep and holds unanimity.
15. physical gas-phase deposite method as claimed in claim 14, the plasma gas ion that wherein this deposition method produced comprises an inert gas ion.
16. physical gas-phase deposite method as claimed in claim 15, wherein this inert gas ion comprises argon gas ion.
17. a physical gas-phase deposite method comprises:
In a plasma body reaction chamber, produce an electric field and a magnetic field, to carry out a depositing operation, wherein when carrying out this depositing operation, strength of electric field in this plasma body reaction chamber is E, the magneticstrength that its bombardment face of target in this plasma body reaction chamber is sensed is B, and the plasma gas ionic carried charge that this depositing operation produced is q, and quality is m, translational speed is v, and its relational expression is as follows:
Wherein, F is a Lorentz power, and when carrying out this depositing operation, the Lorentz that the plasma gas ion at this target bombardment face place is experienced tries hard to keep and holds unanimity.
18. physical gas-phase deposite method as claimed in claim 17, the plasma gas ion that wherein this depositing operation produced comprises an inert gas ion.
19. physical gas-phase deposite method as claimed in claim 18, wherein this inert gas ion comprises argon gas ion.
Wherein, F is a Lorentz power, and when carrying out this depositing operation, the Lorentz that the plasma gas ion at this target bombardment face place is experienced tries hard to keep and holds unanimity.
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| CNB2004100396791A CN100447291C (en) | 2004-03-16 | 2004-03-16 | Physical vapor deposition method and device therefor |
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| CNB2004100396791A CN100447291C (en) | 2004-03-16 | 2004-03-16 | Physical vapor deposition method and device therefor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104213089A (en) * | 2014-08-22 | 2014-12-17 | 京东方科技集团股份有限公司 | Magnetron sputtering equipment and magnetron sputtering method |
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| CN102965636A (en) * | 2011-09-01 | 2013-03-13 | 上海华力微电子有限公司 | Device and method for stabilizing thickness of physical vapor deposition film |
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| US6444103B1 (en) * | 2000-09-15 | 2002-09-03 | Cvc Products, Inc. | Method and apparatus for thin film deposition using an active shutter |
| CN1155734C (en) * | 2002-05-27 | 2004-06-30 | 长沙力元新材料股份有限公司 | Process and apparatus for preparing porous metal by combined physical gas-phase deposition techinque |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104213089A (en) * | 2014-08-22 | 2014-12-17 | 京东方科技集团股份有限公司 | Magnetron sputtering equipment and magnetron sputtering method |
| CN104213089B (en) * | 2014-08-22 | 2016-06-29 | 京东方科技集团股份有限公司 | Magnetron sputtering apparatus and magnetically controlled sputter method |
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