CN1739915A - Prepn process of polishing pad for chemomechanical polishing - Google Patents
Prepn process of polishing pad for chemomechanical polishing Download PDFInfo
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- CN1739915A CN1739915A CN 200510047178 CN200510047178A CN1739915A CN 1739915 A CN1739915 A CN 1739915A CN 200510047178 CN200510047178 CN 200510047178 CN 200510047178 A CN200510047178 A CN 200510047178A CN 1739915 A CN1739915 A CN 1739915A
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- 238000005498 polishing Methods 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title description 19
- 230000008569 process Effects 0.000 title description 14
- 239000003822 epoxy resin Substances 0.000 claims abstract description 39
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 39
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 35
- 239000003085 diluting agent Substances 0.000 claims abstract description 17
- 238000002360 preparation method Methods 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 239000003082 abrasive agent Substances 0.000 claims description 34
- 239000004593 Epoxy Substances 0.000 claims description 20
- 238000003756 stirring Methods 0.000 claims description 10
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 239000004952 Polyamide Substances 0.000 claims description 6
- 229920002647 polyamide Polymers 0.000 claims description 6
- 229920000768 polyamine Polymers 0.000 claims description 6
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 4
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 4
- -1 butyl diglycidyl ether Chemical compound 0.000 claims description 3
- 150000002118 epoxides Chemical class 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 229910015900 BF3 Inorganic materials 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 claims description 2
- 239000006061 abrasive grain Substances 0.000 claims description 2
- 150000008065 acid anhydrides Chemical class 0.000 claims description 2
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 2
- 235000012241 calcium silicate Nutrition 0.000 claims description 2
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 claims description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 235000013312 flour Nutrition 0.000 claims description 2
- 150000004693 imidazolium salts Chemical class 0.000 claims description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 claims description 2
- 239000001095 magnesium carbonate Substances 0.000 claims description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 claims description 2
- 235000014380 magnesium carbonate Nutrition 0.000 claims description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 2
- 239000000347 magnesium hydroxide Substances 0.000 claims description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 2
- 235000012254 magnesium hydroxide Nutrition 0.000 claims description 2
- 235000012245 magnesium oxide Nutrition 0.000 claims description 2
- 239000004843 novolac epoxy resin Substances 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 24
- 238000005516 engineering process Methods 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000010008 shearing Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000007521 mechanical polishing technique Methods 0.000 description 10
- 239000003292 glue Substances 0.000 description 8
- 230000009471 action Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004848 polyfunctional curative Substances 0.000 description 4
- 239000004814 polyurethane Substances 0.000 description 4
- 229920002635 polyurethane Polymers 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- MYEJFUXQJGHEQK-ALRJYLEOSA-N Proscillaridin Chemical compound O[C@@H]1[C@H](O)[C@@H](O)[C@H](C)O[C@H]1O[C@@H]1C=C2CC[C@H]3[C@@]4(O)CC[C@H](C5=COC(=O)C=C5)[C@@]4(C)CC[C@@H]3[C@@]2(C)CC1 MYEJFUXQJGHEQK-ALRJYLEOSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 239000011157 advanced composite material Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000368 destabilizing effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention belongs to the field of chemomechanical polishing technology, and is the preparation process of polishing pad for chemomechanical polishing. The polishing pad is made with epoxy resin 100 weight portions, diluent 100-200 weight portions, grinding material 200-300 weight portions and curing agent 80-300 weight portions, and through curing at certain temperature. In different material composition, hard and soft polishing pads may be made. The prepared polishing pad has high wear resistance, less deformation, high ground material eliminating rate, high elastic modulus and high shearing modulus. The polishing pad is used in polishing semiconductor chip.
Description
Technical field
The invention belongs to the chemical Mechanical Polishing Technique field,, be a kind of preparation method of polishing pad for chemomechanical polishing
Technical field
The present invention is with the polymeric matrix material of epoxy resin cured product as the novel fixed abrasive material polishing pad that is used for the chemical Mechanical Polishing Technique field.The present invention adds 80～300 parts of curing agent in 100 parts epoxy resin, 100～200 parts of epoxy active diluents, 200～300 parts of abrasive material (particle diameters 10～1000nm), evenly after mixing, the vacuum defoamation, place specific mould, thereby and solidify according to certain process conditions and to make.It is good that the novel fixed abrasive material polishing pad that is used for the chemical Mechanical Polishing Technique field that the present invention makes has wearability, deformation is little, the material removing rate height, the characteristics that elastic modelling quantity and modulus of shearing are high, it has remedied domestic and international use epoxy resin cured product prepares the novel fixed abrasive material polishing pad that is used for the chemical Mechanical Polishing Technique field as polymeric matrix material blank, can be used for thick throwing and thin throw of chemically mechanical polishing (CMP) technology to semiconductor wafer surface, and surperficial leveling of each stage that is used for ic manufacturing process, will promote the develop rapidly of integrated circuit.
Technical background
Polishing traditionally can be divided into two classes by the mode of action: chemical polishing and machine glazed finish are mainly used in integrated circuit (integrated circuit, be called for short IC) and make Surface Machining with materials such as the thick throwing of base material silicon and smart throwing and metal, glass.Chemical polishing is the use SiO that nineteen sixty-five Walsh and Herzo propose
2The method that colloidal sol and gel polish refers to take place by the chemical composition in the polishing material and polished material chemical reaction such as corrosion and with the process of material surface roughness reduction; And machine glazed finish is meant by the abrasive media in the polishing material and fully contacts with the material surface coarse part, thereby reduce the process of material surface roughness, before the mid-1960s, machine glazed finish is also mostly continued to use in the semiconductor chip polishing, for example adopts methods such as magnesia, scandium oxide, pure zirconia chromium.Two kinds of finishing methods respectively have pluses and minuses: the precision of chemical polishing is higher, and the collapse dept that polishing produces is more shallow. but polishing velocity is very slow, causes polishing the mist spot easily; The collapse dept that machine glazed finish produces is darker, but the polishing precision is lower, and the specular surface damage is extremely serious, and polishing velocity is also slower.
In recent years, along with the fast rise of memory, hard disk capacity and storage density, magnetic head is forced to read littler, more weak signal, thereby the distance between magnetic head and the disk magnetizing mediums need further reduce to improve the intensity of output signal.At present, the flying height of computer magnetic head is reduced to about 10nm, and further downward trend is arranged.If the harddisk surface waviness is big or have a microprotrusion of several microns, magnetic head will with the magnetic disk substrate surface collision, damage magnetic head or the lip-deep magnetizing mediums of memory, hard disk take place " magnetic head crushing ".Thereby harddisk surface requirement ultra-smooth, and must remove microprotrusion or tiny pit and other blemish fully.Therefore, device is more and more higher to the flatness requirement of disk, and silicon chip requirement local and general planarization has become more and more urgent, and single chemistry or machine glazed finish have been difficult to satisfy technological requirement.For overcoming the shortcoming of chemical polishing and machine glazed finish, absorb their advantage, big quantity research of the eighties people and commercial development a kind of chemical action and mechanism are combined, satisfied the finishing method of the requirement of disk figure processing on processing characteristics and the speed simultaneously, be called chemically mechanical polishing (Chemical MechanicalPolishing is called for short CMP).Chemical Mechanical Polishing Technique over past ten years (CMP) development rapidly, its basic operation is, at certain pressure and polishing fluid (as SiO
2Grind slurry) exist down, polished workpiece is done relative motion with respect to polishing pad, it is the process of chemical action, mechanism, hydrodynamics comprehensive function, by means of the combination between the chemical attack effect of the abrasive action of nano particle, oxidant, form smooth finish surface at polished surface of the work, obtain changing with the low surface topography that other any plane processing can not obtain.
Chemically mechanical polishing (CMP) is the part of whole deposit of disk and etch process, and it forms the monolithic devices plane by particulate grinding-material or slurry with the special-purpose polishing dish on the wafer of making figure; It comprises removes the ILD layer, and to obtain the planarization of height, this is the technology of a non local planarization beyond doubt, and the planarization regions that produces has exceeded the area of step photo-etching machine image field; Oxide layer is removed by the compound action of chemistry and machinery with a kind of abrasive material that is dissolved in the basic solvent; And has an advantage that processing method is simple, processing cost is low.This technology is applied to IC the earliest and makes thick throwing and smart throwing of using base material silicon, the polishing precision and the polishing velocity of silicon chip have been improved greatly, thereby the quality and the production efficiency of silicon wafer polishing have greatly been improved, reduced production cost, become and known now uniquely can make the whole pattern planarization that has low slope after the planarization; And CMP helps to alleviate the configuration of surface of the serious injustice that sandwich construction causes, and plays a significant role to satisfying the requirement of photoetching depth of focus.In June, 1992, in 9th International IEEEVISI Mutilevel Interconnection Conference (VMIC) meeting that the U.S. holds, the CMP technology is as the planarization of semiconductor multi layer film, united by IBM Corporation and Microtechnology company and sells.After this, in having 0.5 μ m device fabrication process of three layers or more multi-layered metal, CMP more becomes indispensable operation together.
Chemically mechanical polishing (CMP) application aborning, early start is in the U.S..The U.S. is the market of CMP maximum, and it lays particular stress on multilayer device.Europe is introduced production line to CMP.And the Japan and the Asian-Pacific area be phenomenal growth, and most semiconductor producers have adopted metal CMP, and have the ability to develop second generation metal CMP technology.It is reported 7 families are arranged when producing 0 35 μ m devices in Japan in 1996 maximum ten tame IC manufacturing firm, used the cmp planarization metallization processes.The submicron technology that comprises CMP has also been developed in Korea S and Taiwan.
Can be divided into according to abrasive material position finishing method: loose and fixed abrasive material polishing.Loose is meant abrasive material is placed in the polishing fluid, polissoir is simple, process conditions are easy to guarantee, but there is shortcoming: at first be that polishing efficiency is low, secondly be difficult to accurate control: can only processing plane or sphere, for the parabola with extensive use, aspherics surfaces such as high order curved surface are powerless; Exist in addition " edge of work passivation effect ", surface figure accuracy is not high, and there are breakable layer and metamorphic layer in the surface.Fixed abrasive material polishing is meant that abrasive material is added in the polishing pad, and abrasive material can not freely-movable, but immediately following the polishing pad motion, the raised area that the bulky grain abrasive material causes will be polished, the abrasive material height unanimity on polishing pad.The abrasive material that participates in polishing like this increases, so fixed abrasive material polishing mode is lacked than the cut of shot polish abrasive mode, destabilizing factor is few, and polish parts are convenient to clean, polishing pad face shape good stability, and surface quality is good, and the efficient height; But the manufacturing expense height, the cycle is long.When adopting fixed abrasive material polishing mode, the abrasive material of 3.5pm can reach the roughness of 2.83nm.Therefore adopt fixed abrasive material polishing mode at present mostly.
Polishing pad is one of critical component in chemically mechanical polishing (CMP) technology, and polishing efficiency and crudy are had material impact.Its major function has: (1) can store polishing fluid, and it is transported to the whole machining area of workpiece, makes polishing evenly; (2) remove the residuals (as polishing chip, polishing pad fragment etc.) that polishing process produces from the workpiece polished surface; (3) transmit material and remove required mechanical load; (4) keep required machinery of polishing process and chemical environment.Pad performance is mainly by the decisions such as material category, material property, surface texture and state of polishing pad.The choose reasonable of polishing pad has significance for control and optimization chemically mechanical polishing (CMP) process.But lack at present polishing pad is familiar with more completely in the effect of chemically mechanical polishing (CMP) process, in most of application scenarios, polishing pad structure, material all are rule of thumb to select.
Polishing pad can be divided into hard and soft (elasticity, viscoplasticity) two kinds usually.The hard polishing pad can guarantee the flatness of surface of the work preferably; Soft polishing pad can obtain affected layer and all very little polished surface of surface roughness.The hard polishing that is used for chemically mechanical polishing (CMP) process is lined with various coarse cloth pads, fabric pad, polyethylene pads etc., and soft polishing pad mainly contains urethane pad, fine, soft fur felt pan, various Villus cloth pads etc.Polishing pad multiselect now is with two-layer stack, as a kind of polishing pad of forming by polyurethane IC1000 and polyurethane SUBAIV stack, harder polyurethane IC1000 polishing pad is selected on the upper strata for use, bear machinery, the chemical action of chemically mechanical polishing (CMP) process, thereby can improve material removing rate and obtain better flatness; Bottom is selected softer resilient polyurethane SUBAIV polishing pad for use, can improve the compressibility of whole polishing pad, makes pad interface and workpiece even contact, guarantees the effectively evenly removal of wafer surface material.
Epoxy resin (EP) is a kind of important thermosetting polymer synthetic material.From nineteen forty-seven epoxy resin after U.S. industrialization, over more than 50 year along with the very fast development of domestic and international petrochemical industry and synthetic resin, great variety has also taken place in the synthetic technology of epoxy resin, new varieties and application thereof, has caused outer in the industry personage's common concern.Epoxy resin has excellent low, easy machine-shaping of adhesive property, anti-wear performance, mechanical performance, electrical insulation capability, chemical stability, high and low temperature resistance and shrinkage factor and advantage such as with low cost, in fields such as adhesive, electronic instrument, light industry, building, machinery, space flight and aviation, coating, electric insulating materials and advanced composite material, play important effect, become indispensable basic material in each industrial circle.
The present invention utilizes the wearability of epoxy resin, chemical stability and use different curing agent can obtain the characteristics of the different material of performance (as: hardness, elastic modelling quantity, modulus of shearing), the preparation that epoxy resin is used for the chemical Mechanical Polishing Technique polishing pad has initiative.
Summary of the invention
The object of the present invention is to provide a kind of preparation method who is used for the novel fixed abrasive material polishing pad of chemically mechanical polishing (CMP) technical field.The present invention is with the polymeric matrix material of epoxy resin cured product as the novel fixed abrasive material polishing pad that is used for the chemical Mechanical Polishing Technique field, and added epoxy active diluent, can be in the wearability that guarantees the curable epoxide thing, increase its pliability, improve the surface smoothness of polished part, make its solidfied material have excellent comprehensive performances, remedied domestic and international use epoxy resin and prepared the blank of chemical Mechanical Polishing Technique with polishing pad; Adopt the fixed abrasive material polishing technology simultaneously, combine with present advanced person's polishing technology and have more epoch making significance.Therefore, the prepared polishing pad of the present invention is applicable to chemically mechanical polishing fixed abrasive material polishing technology field, the thick throwing and thin throwing that can be used for semiconductor wafer surface, and surperficial leveling of each stage that can be used for ic manufacturing process, the develop rapidly that promotes integrated circuit is had great realistic significance.
The specific embodiments of the technology of the present invention is, the preparation method of polishing pad for chemomechanical polishing: at first epoxy resin and epoxy active diluent are mixed, add abrasive material then and curing agent stirs, in temperature is 70 ℃-110 ℃, time is 2-5 hour condition compacted under cured sheets, resulting curable epoxide thing is polishing pad for chemomechanical polishing, epoxy resin, epoxy active diluent, the mass ratio of curing agent and abrasive material is 100: 100～200: 80～300: 200～300, by mass percentage, the releasing agent addition is 1～2% of epoxy resin and a curing agent quality summation, and the abrasive grain diameter is 10～1000nm.
Epoxy resin is the mixture of bisphenol A type epoxy resin, polyacid ethylene oxidic ester, amino polyfunctional epoxy resin, cycloaliphatic epoxy resin, novolac epoxy resin or their any ratios.
Epoxy active diluent is butyl diglycidyl ether, allyl glycidyl ether, phenyl glycidyl ether, to the mixture of isobutyl phenenyl glycidol ether, methyl propenoic acid glycidyl ether or their any ratios.
Curing agent is polyamide polyamine, aliphatic polyamine, aromatic polyamine, acid anhydrides, imidazolium compounds or boron trifluoride complex.
Abrasive material is calcium carbonate, silica flour, magnesia, magnesium hydroxide, magnesium carbonate or calcium silicates.
Releasing agent is inner pattern releasing agent applicable or external release agent.
The useful achievement that the present invention embodied is, it has used epoxy resin cured product as the polymeric matrix material that is used for the novel fixed abrasive material polishing pad in chemical Mechanical Polishing Technique field, has remedied domestic and international use epoxy resin and has prepared the blank of chemical Mechanical Polishing Technique with polishing pad.The prepared polishing pad of the present invention can satisfy the requirement of the surperficial high-flatness in modern semiconductors wafer and the ic manufacturing process, and adopted advanced fixed abrasive material polishing technology, combine closely with modern advanced, be expected in each stage surface leveling process of semiconductor wafer surface processing and ic manufacturing process, to be fully utilized, will make remarkable contribution for the development of modern precision instrument.
The specific embodiment
The present invention is further illustrated below in conjunction with embodiment.
Embodiment one
Epoxy resin E-44 and epoxy active diluent 669 are mixed, add anhydrous CaCo again
3Powder stirs.Treat to add the epoxy hardener polyamide after glue is the homogeneous state, and add a small amount of releasing agent, stirring also casts in glue in the mould of given shape after the vacuum defoamation, and for being 70 ℃, the time is 2 hours condition compacted under cured sheets in temperature.Wherein the mass ratio of epoxy resin, epoxy active diluent, curing agent and abrasive material is 100: 150: 200: 250.By mass percentage, the releasing agent addition is 1% of epoxy resin and a curing agent quality summation.
Embodiment two
Epoxy resin E-44 and epoxy active diluent 669 are mixed, add anhydrous CaCo again
3Powder stirs.Treat to add the epoxy hardener polyamide after glue is the homogeneous state, and add HBT-6 type releasing agent, after the vacuum defoamation that stirs glue is cast in the specific mould, for being 80 ℃, the time is 2.5 hours condition compacted under cured sheets in temperature.Wherein the mass ratio of epoxy resin, epoxy active diluent, curing agent and abrasive material is 100: 150: 250: 250, and by mass percentage, the releasing agent addition is 1.5% of epoxy resin and a curing agent quality summation.
Embodiment three
Epoxy resin E-51 and epoxy active diluent 669 are mixed, add anhydrous CaCo again
3Powder stirs.Treat to add the epoxy hardener polyamide after glue is the homogeneous state, and add HBT-6 type releasing agent, after the vacuum defoamation that stirs glue is cast in the specific mould, for being 85 ℃, the time is 2.5 hours condition compacted under cured sheets in temperature.Wherein the mass ratio of epoxy resin, epoxy active diluent, curing agent and abrasive material is 100: 150: 200: 250, and by mass percentage, the releasing agent addition is 1.8% of epoxy resin and a curing agent quality summation.
Embodiment four
Epoxy resin E-51 and epoxy active diluent 669 are mixed, add anhydrous CaCo again
3Powder stirs.Treat to add the epoxy hardener polyamide after glue is the homogeneous state, and add HBT-6 type releasing agent, after the vacuum defoamation that stirs glue is cast in the specific mould, for being 90 ℃, the time is 3 hours condition compacted under cured sheets in temperature.Wherein the mass ratio of epoxy resin, epoxy active diluent, curing agent and abrasive material is 100: 150: 250: 250, and by mass percentage, the releasing agent addition is 2% of epoxy resin and a curing agent quality summation.
Claims (6)
1, the preparation method of polishing pad for chemomechanical polishing, it is characterized in that, epoxy resin and epoxy active diluent are mixed, add abrasive material then and curing agent stirs, in temperature is 70 ℃-110 ℃, time is under 2-5 hour the condition, the forming and hardening sheet, resulting curable epoxide thing is polishing pad for chemomechanical polishing, epoxy resin, epoxy active diluent, the mass ratio of curing agent and abrasive material is 100: 100～200: 80～300: 200～300, by mass percentage, the releasing agent addition is 1～2% of epoxy resin and a curing agent quality summation, and the abrasive grain diameter is 10～1000nm.
2, the preparation method of polishing pad for chemomechanical polishing according to claim 1, it is characterized in that described epoxy resin is the mixture of bisphenol A type epoxy resin, polyacid ethylene oxidic ester, amino polyfunctional epoxy resin, cycloaliphatic epoxy resin, novolac epoxy resin or their any ratios.
3, the preparation method of polishing pad for chemomechanical polishing according to claim 1, it is characterized in that described epoxy active diluent is butyl diglycidyl ether, allyl glycidyl ether, phenyl glycidyl ether, to the mixture of isobutyl phenenyl glycidol ether, methyl propenoic acid glycidyl ether or their any ratios.
4, the preparation method of polishing pad for chemomechanical polishing according to claim 1 is characterized in that, described curing agent is polyamide polyamine, aliphatic polyamine, aromatic polyamine, acid anhydrides, imidazolium compounds or boron trifluoride complex.
5, the preparation method of polishing pad for chemomechanical polishing according to claim 1 is characterized in that, described abrasive material is calcium carbonate, silica flour, magnesia, magnesium hydroxide, magnesium carbonate or calcium silicates.
6, the preparation method of polishing pad for chemomechanical polishing according to claim 1 is characterized in that, described releasing agent is inner pattern releasing agent applicable or external release agent.
Priority Applications (1)
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|---|---|---|---|
| CN 200510047178 CN1739915A (en) | 2005-09-08 | 2005-09-08 | Prepn process of polishing pad for chemomechanical polishing |
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| CN 200510047178 CN1739915A (en) | 2005-09-08 | 2005-09-08 | Prepn process of polishing pad for chemomechanical polishing |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101577219B (en) * | 2008-05-09 | 2012-07-04 | 株式会社迪思科 | Method and apparatus for preparing wafer and cured resin composition |
| CN102658522A (en) * | 2012-05-16 | 2012-09-12 | 南京英星光学仪器有限公司 | Spherical consolidation abrasive grinding and polishing pad for processing optical element |
| CN101939137B (en) * | 2008-02-07 | 2013-09-18 | 法商圣高拜欧洲实验及研究中心 | Abrasive grain powder |
| CN110052917A (en) * | 2019-04-27 | 2019-07-26 | 安徽工程大学 | A kind of sapphire polishing processing method based on concretion abrasive technology |
| CN114750069A (en) * | 2022-03-17 | 2022-07-15 | 安徽禾臣新材料有限公司 | A meticulous polishing pad for new energy automobile cylinder inner wall |
-
2005
- 2005-09-08 CN CN 200510047178 patent/CN1739915A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101939137B (en) * | 2008-02-07 | 2013-09-18 | 法商圣高拜欧洲实验及研究中心 | Abrasive grain powder |
| CN101577219B (en) * | 2008-05-09 | 2012-07-04 | 株式会社迪思科 | Method and apparatus for preparing wafer and cured resin composition |
| CN102658522A (en) * | 2012-05-16 | 2012-09-12 | 南京英星光学仪器有限公司 | Spherical consolidation abrasive grinding and polishing pad for processing optical element |
| CN110052917A (en) * | 2019-04-27 | 2019-07-26 | 安徽工程大学 | A kind of sapphire polishing processing method based on concretion abrasive technology |
| CN114750069A (en) * | 2022-03-17 | 2022-07-15 | 安徽禾臣新材料有限公司 | A meticulous polishing pad for new energy automobile cylinder inner wall |
| CN114750069B (en) * | 2022-03-17 | 2023-01-24 | 安徽禾臣新材料有限公司 | A meticulous polishing pad for new energy automobile cylinder inner wall |
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