CN1737677A - Semiconductor full optical wavelength converter - Google Patents
Semiconductor full optical wavelength converter Download PDFInfo
- Publication number
- CN1737677A CN1737677A CN 200510019270 CN200510019270A CN1737677A CN 1737677 A CN1737677 A CN 1737677A CN 200510019270 CN200510019270 CN 200510019270 CN 200510019270 A CN200510019270 A CN 200510019270A CN 1737677 A CN1737677 A CN 1737677A
- Authority
- CN
- China
- Prior art keywords
- wavelength
- port
- wave filters
- semiconductor
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Communication System (AREA)
Abstract
This invention relates to one semi-conductor complete wavelength converter in semi-conductor photoelectrical parts, wherein, the wavelength is the optical signals of W1 from three-end filter input terminal to reflection terminal, reflection filter into semi-conductor amplifier to modulate direct detecting light and to form the conversion signals with W2 wavelength; the conversion signals go through reflection filter and three-end filter reflection terminal into three-end filter to convert into modulation signal.
Description
Technical field
The invention belongs to semiconductor photoelectric device, be specifically related to a kind of semiconductor wavelength converter, have from surveying and filter function.
Background technology
All Optical Wave Converter is the critical component in optical fiber telecommunications system and the all-optical network.Semiconductor full optical wavelength converter utilizes the nonlinear effects such as cross-gain modulation, cross-phase modulation and four-wave mixing of semiconductor material to realize the function of wavelength variations, can solve problems such as wavelength blocker effectively.The employed separating component of semiconductor full optical wavelength converter is more at present, just used a plurality of auxiliary elements such as wavelength division multiplexer, circulator and tunable optic filter to realize corresponding function as the semiconductor full optical wavelength converter in the Chinese patent application number 03128385, in application, also need to add detecting laser and wave filter, the structure more complicated causes application and maintenance cost higher.
Summary of the invention
The present invention proposes a kind of semiconductor full optical wavelength converter, and at existing semiconductor full optical wavelength converter complex structure, the higher present situation of application cost, effectively simplified structure reduces application cost.
A kind of semiconductor full optical wavelength converter of the present invention, comprise the semiconductor optical amplifier chip that constitutes successively by substrate, cushion, top covering, active area, under-clad layer, ohmic contact layer, the top layer of chip and bottom are respectively upper and lower metal electrode layer, and have upper and lower electrode respectively; It is characterized in that:
(1) wavelength is the input port incident of the modulated light signal to be converted of W1 by three port wave filters, reflector port, reflective filter via three port wave filters enter the semiconductor optical amplifier chip and modulate direct current detection light, forming wavelength is the transmitting photo-signal of W2, this transmitting photo-signal enters three port wave filters via the reflector port of reflective filter and three port wave filters again, by the modulated light signal of the transmission port output wavelength of three port wave filters conversion;
(2) described three port wave filters and reflective filter centre wavelength are that W2, described semiconductor optical amplifier chip front/rear end have been coated with anti-reflection film respectively and have increased anti-film; Anti-reflection film has and is approximately equal to 1 transmissivity, increase anti-film and have suitable reflectivity greater than 32%, and the gain spectral wavelength coverage comprises W1 and W2, and the centre wavelength of gain spectral is positioned at optical fiber communication 850nm, and 1310nm is in any one in three windows of 1550nm;
(3) described anti-film, semiconductor optical amplifier chip and the reflective filter of increasing constitutes active resonant cavity, forms wavelength and surveys light for the W2 direct current;
W1 is a modulated light signal wavelength to be converted, and W2 is that direct current is surveyed optical wavelength, three optical fiber communication window 850nm that their span coexists common, and 1310nm, in any one among the 1550nm, W1 is not equal to W2.
Described semiconductor full optical wavelength converter is characterized in that described three port wave filters are that centre wavelength is the logical optical filter of arrowband band of W2, and for the light wave by the input port input, wavelength is that the light of W1 will be reflected, and is exported by reflector port; For the light wave by the reflector port input, wavelength is that the light of W2 will be exported by the transmission port by transmission; Described reflective filter has at wavelength W1 place and is approximately equal to 1 transmissivity; Have at wavelength W2 place and to be not equal to 1 suitable reflectivity.
Described semiconductor full optical wavelength converter, described three port wave filters can be that core constitutes by interference filter, described reflective filter can be made of fiber grating.
The present invention adopts the semiconductor optical amplifier and the three port filter unit structure combining of single-ended coupling input and output, has the following advantages: 1, device self produces direct current and surveys light, does not need to add in addition detecting laser.2, three port wave filters have input and output coupling and effective filtering amplified spont-aneous emission light function concurrently, do not need to add in addition optical circulator and wave filter.3, integrate and survey light generation, light wavelength conversion and filtering, process procedure reduces, and volume reduces, production cost can reduce greatly, can constitute a kind of compact conformation, conversion efficiency height, the fixing All Optical Wave Converter of output wavelength.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is one of the present invention and uses exemplary plot.
Embodiment
Below in conjunction with accompanying drawing to the detailed description of the invention.
Fig. 1 is a kind of structural representation of the present invention.It is that the three port wave filters 2 of W2, reflective filter 4, semiconductor optical amplifier chip 6 that centre wavelength is W2 and the anti-film 7 that increases of anti-reflection film 5 that is coated on semiconductor optical amplifier chip 6 front end faces and rear end face constitute by centre wavelength.Three port wave filters 2 are that a centre wavelength is the logical optical filter of W2 arrowband band, and for the light wave by input port 1 input, wavelength is that the light of W1 will be reflected, by reflector port 3 outputs; For the light wave by reflector port 3 inputs, wavelength is that the light of W2 will be by transmission, by 8 outputs of transmission port.Reflective filter 4 is at wavelength W1 place, has to be approximately equal to 1 transmissivity; Have at wavelength W2 place and to be not equal to 1 suitable reflectivity.Semiconductor optical amplifier chip 2 gain spectral wavelength coverages comprise W1 and W2.
In concrete the application, wavelength of optical signal W1 to be converted should be not equal to by increasing anti-film 7, semiconductor optical amplifier chip 6 and reflective filter 4 and constitutes the direct current that active resonant cavity produces and survey light wavelength W2.Be that the modulated light signal to be converted of W1 enters semiconductor optical amplifier chip 5 via the reflector port 3 of three port wave filters 2 and reflective filter 4 and modulates direct current and survey light by the wavelength of input port 1 incident of three port wave filters 2, forming wavelength is the transmitting photo-signal of W2, this transmitting photo-signal enters three port wave filters 2 via reflective filter 4 and reflector port 3 more then, by the modulated light signal of transmission port 8 output wavelengths conversion.Three port wave filters 2 are for the then effectively filtering of amplified spont-aneous emission light by 8 outputs of transmission port.
Fig. 2 is one of the present invention and uses exemplary plot.The All Optical Wavelength Conversion module that it is made up of semiconductor full optical wavelength converter WC of the present invention and input optoisolator 9, output optoisolator 10, current driving circuit 11 and temperature-control circuit 12 etc.Wherein, input optoisolator 9 is used for direct current detection light and the amplified spont-aneous emission light that isolation of semiconductor All Optical Wave Converter WC produces, and makes it can not produce disadvantageous interference for the optical transmitter of front end; Output optoisolator 10 is used to isolate the interference of rear end feedback light for semiconductor full optical wavelength converter WC; Current driving circuit 11 provides stable drive current for semiconductor full optical wavelength converter WC; Temperature-control circuit 12 provides stable working temperature for semiconductor full optical wavelength converter WC.
Fig. 1, Fig. 2 are descriptive rather than determinate to the explanation that the present invention did, and can utilize fiber grating to realize such as reflective filter among Fig. 1; And for example can adopt one or two optoisolators as required among Fig. 2.
Claims (3)
1. semiconductor full optical wavelength converter, comprise the semiconductor optical amplifier chip that constitutes successively by substrate, cushion, top covering, active area, under-clad layer, ohmic contact layer, the top layer of chip and bottom are respectively upper and lower metal electrode layer, and have upper and lower electrode respectively; It is characterized in that:
(1) wavelength is the input port incident of the modulated light signal to be converted of W1 by three port wave filters, reflector port, reflective filter via three port wave filters enter the semiconductor optical amplifier chip and modulate direct current detection light, forming wavelength is the transmitting photo-signal of W2, this transmitting photo-signal enters three port wave filters via the reflector port of reflective filter and three port wave filters again, by the modulated light signal of the transmission port output wavelength of three port wave filters conversion;
(2) described three port wave filters and reflective filter centre wavelength are that W2, described semiconductor optical amplifier chip front/rear end have been coated with anti-reflection film respectively and have increased anti-film; Anti-reflection film has and is approximately equal to 1 transmissivity, increase anti-film and have suitable reflectivity greater than 32%, and the gain spectral wavelength coverage comprises W1 and W2, and the centre wavelength of gain spectral is positioned at optical fiber communication 850nm, and 1310nm is in any one in three windows of 1550nm;
(3) described anti-film, semiconductor optical amplifier chip and the reflective filter of increasing constitutes active resonant cavity, forms wavelength and surveys light for the W2 direct current;
W1 is a modulated light signal wavelength to be converted, and W2 is that direct current is surveyed optical wavelength, three optical fiber communication window 850nm that their span coexists common, and 1310nm, in any one among the 1550nm, W1 is not equal to W2.
2. semiconductor full optical wavelength converter as claimed in claim 1, it is characterized in that described three port wave filters are that centre wavelength is the logical optical filter of arrowband band of W2, for the light wave by the input port input, wavelength is that the light of W1 will be reflected, and is exported by reflector port; For the light wave by the reflector port input, wavelength is that the light of W2 will be exported by the transmission port by transmission; Described reflective filter has at wavelength W1 place and is approximately equal to 1 transmissivity; Have at wavelength W2 place and to be not equal to 1 suitable reflectivity.
3. semiconductor full optical wavelength converter as claimed in claim 1 or 2 is characterized in that described three port wave filters are that core constitutes by interference filter, and described reflective filter is made of fiber grating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100192708A CN100367104C (en) | 2005-08-10 | 2005-08-10 | Semiconductor full optical wavelength converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100192708A CN100367104C (en) | 2005-08-10 | 2005-08-10 | Semiconductor full optical wavelength converter |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1737677A true CN1737677A (en) | 2006-02-22 |
CN100367104C CN100367104C (en) | 2008-02-06 |
Family
ID=36080511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100192708A Expired - Fee Related CN100367104C (en) | 2005-08-10 | 2005-08-10 | Semiconductor full optical wavelength converter |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100367104C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107289977A (en) * | 2017-05-09 | 2017-10-24 | 上海大学 | The Distributed optical fiber sensor system and localization method of semiconductor optical amplifier Active Interferometric |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03103837A (en) * | 1989-09-19 | 1991-04-30 | Nippon Telegr & Teleph Corp <Ntt> | Optical wavelength converter |
KR19990055420A (en) * | 1997-12-27 | 1999-07-15 | 정선종 | Fully Optical Wavelength Converter Using Semiconductor Optical Amplifier and Polarization Interferometer |
JP2001117128A (en) * | 1999-10-14 | 2001-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Wavelength conversion element |
JP3833179B2 (en) * | 2002-02-13 | 2006-10-11 | キヤノン株式会社 | Optical wavelength conversion device and optical wavelength conversion method |
CN1190696C (en) * | 2003-07-25 | 2005-02-23 | 华中科技大学 | All optical wavelength converter |
CN1588220A (en) * | 2004-09-10 | 2005-03-02 | 上海理工大学 | Full light wave converter based on laser four wave mixing effect |
-
2005
- 2005-08-10 CN CNB2005100192708A patent/CN100367104C/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107289977A (en) * | 2017-05-09 | 2017-10-24 | 上海大学 | The Distributed optical fiber sensor system and localization method of semiconductor optical amplifier Active Interferometric |
CN107289977B (en) * | 2017-05-09 | 2020-10-30 | 上海大学 | Semiconductor optical amplifier active interference distributed optical fiber sensing system and positioning method |
Also Published As
Publication number | Publication date |
---|---|
CN100367104C (en) | 2008-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6061481A (en) | Optoelectronic circuit | |
CN102882601B (en) | Silicon photonic integrated high-speed optical communication transceiver module | |
CN104601244A (en) | 400 Gbps hot-plug high-speed optical transceiver module | |
CN202872791U (en) | A high-speed optical communication transmitting and receiving module using silicon photon integration technology | |
CN102713703A (en) | Waveguide optically pre-amplified detector with passband wavelength filtering | |
CN109254365A (en) | Light-receiving mould group and preparation method thereof, light receiving element | |
CN1276600C (en) | WDM transmission, WDM transmission system and WDM transmission method | |
US8478130B2 (en) | Optical communication device | |
CN100367104C (en) | Semiconductor full optical wavelength converter | |
CN1737674A (en) | Clamp-on filtering semiconductor light amplifier | |
CN107462956A (en) | Light-receiving secondary module and optical module | |
CN100485512C (en) | High-performance free space fibre-optical amplifier module | |
CN102289129B (en) | Integrated high-speed all-optical wavelength conversion device | |
CN111276562A (en) | Photoelectric monolithic integration system based on lithium niobate-silicon nitride wafer | |
CN202720428U (en) | Device for improving gain of fiber parameter amplifier by adopting phase-shifting grating | |
WO2022033062A1 (en) | Device for adjusting wavelength | |
CN101261418B (en) | Optical wavelength converter | |
WO2005012972A1 (en) | Photonic integrated circuit based optical transceiver | |
JP2002303900A (en) | Hybrid wavelength converter | |
CN1258101C (en) | Intelligent type double channel optical fiber amplifier for metropolitan area network | |
CN109802745A (en) | A kind of 8 channel wave band multiplex/demultiplex devices for 200G/400G optical transceiver module | |
CN215934862U (en) | CML optical component for 10GPON application and OLT optical component thereof | |
CN112054842B (en) | Device for adjusting wavelength | |
CN110221455B (en) | Microwave photon band-pass filter chip based on silicon waveguide stimulated Brillouin scattering effect | |
WO2024001688A1 (en) | Passive communication terminal, passive communication system, and passive communication method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080206 Termination date: 20150810 |
|
EXPY | Termination of patent right or utility model |