CN1722362A - Semiconductor manufacturing apparatus - Google Patents
Semiconductor manufacturing apparatus Download PDFInfo
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- CN1722362A CN1722362A CNA2005100841667A CN200510084166A CN1722362A CN 1722362 A CN1722362 A CN 1722362A CN A2005100841667 A CNA2005100841667 A CN A2005100841667A CN 200510084166 A CN200510084166 A CN 200510084166A CN 1722362 A CN1722362 A CN 1722362A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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Abstract
Disclosed herein is a semiconductor manufacturing apparatus. The apparatus comprises a transfer module, first and second process modules equipped to adjacent first and second faces of the transfer module while defining an acute angle to the first and second faces of the transfer module, respectively, and a load-lock chamber connected to a third face of the transfer module. The adjacent process modules are disposed parallel to each other. As such, the process modules are close to or in contact with each other on the transfer module, thereby reducing an area occupied by the apparatus without reducing manufacturing efficiency. A source supply unit can be enlarged towards an adjacent face of the adjacent process modules, so that various source materials for forming semiconductor chips can be effectively supplied to the semiconductor manufacturing apparatus through the enlarged source supply unit.
Description
Technical field
The present invention relates to semiconductor manufacturing facility, and more particularly, relate to having and can not reduce the treatment chamber of making efficient and the semiconductor manufacturing facility of transfer chamber than the zonule through effectively being configured to occupy.
Background technology
In general, semiconductor manufacturing facility is used to make semiconductor chip.Particularly, semiconductor manufacturing facility is used for vapour deposition or sputter process with depositing semiconductor layers on Semiconductor substrate, or is used for etching or exposes handling to form predetermined pattern on Semiconductor substrate.
Fig. 1 is the schematic diagram of the conventional semiconductor manufacturing facility of explanation.
As shown in fig. 1, conventional semiconductor manufacturing facility comprises: a shift module 10 has the transfer mechanical arm 45 of the assembling of heart place therein; A plurality of processing module 30a and 30b (also can by reference number 30 expression), it with a circumference form preset distance separated from one another, and has the predetermined condition that is used to make semiconductor chip around shift module 10; With a load lock chamber 20, it is assemblied in shift module 10 is used to handle or be in wait state on every side after described processing with reception Semiconductor substrate.Described semiconductor manufacturing facility further comprises one and is assemblied in the cooling chamber 40 of a surface of shift module with cooling of semiconductor element.
Each processing module 30 comprises one and is used to carry out the resource provisioning unit 36 that controller 34 and that the reaction chamber 32, of making the semiconductor chip process is used to control the operation of each processing module 30 is used to supply extra resource.
Described semiconductor manufacturing facility is disclosed in detail that Korean Patent special permission is openly announced 2000-20876 number and Korean Utility Model is announced in 1996-8156 number.
Yet, in the conventional semiconductor manufacturing facility of as indicated above and construction, a plurality of processing module 30a and 30b with the circumference form be positioned at shift module 10 around, simultaneously V-shaped separated from one another with respect to the center of shift module 10.As a result, semiconductor manufacturing facility occupies big zone, has limited the number of assembling semiconductor manufacturing facility in the confined space whereby.Thereby there is a problem in conventional semiconductor manufacturing facility, that is, must provide enough spaces to obtain desired manufacturing efficient.In addition, when the resource provisioning unit that enlarges corresponding to various treatment conditions, the occupied zone of semiconductor manufacturing facility has also increased.Equally, conventional semiconductor manufacturing facility enlarge aspect the resource provisioning unit restricted.
Summary of the invention
The present invention is used to address the above problem, and one object of the present invention is to provide a kind of semiconductor manufacturing facility, it has around the shift module each other the processing module than neighbor configuration, can easily enlarge the resource provisioning unit whereby and reduce the occupied space of equipment (promptly, the zone of semiconductor manufacturing facility), can not reduce manufacturing efficient.
According to an aspect of the present invention, above-mentioned and other purpose can realize that described semiconductor manufacturing facility comprises by following semiconductor manufacturing facility is provided: a shift module; One first processing module and one second processing module, it is assemblied in the first surface and the second surface of shift module respectively, and first surface and the second surface with shift module defines an acute angle simultaneously, and first surface and second surface are located adjacent one another; With a load lock chamber that is connected to the 3rd surface of shift module.
The angle of preferred definition one 10 to 90 degree between the longitudinal axis of each first surface and second surface and each processing module.At this, first processing module and the second processing module preferable separate 30cm or distance still less.
According to another aspect of the present invention, provide a kind of semiconductor manufacturing facility, it comprises: a plurality of shift modules; One first processing module and one second processing module, it is assemblied in the first surface and the second surface of each shift module respectively, and first surface and the second surface with each shift module defines an acute angle simultaneously, and first surface and second surface are located adjacent one another; With a load lock chamber that is connected to the 3rd surface of each shift module.
According to another aspect of the present invention, provide a kind of semiconductor manufacturing facility, it comprises: a shift module; One first processing module and one second processing module, it is connected respectively to the first surface and the second surface of shift module, and is simultaneously parallel to each other; With a load lock chamber that is connected to the 3rd surface of shift module.
First processing module preferably is separated with second processing module, and feasible direction with longitudinal axis is parallel to second processing module.
Shift module preferably has one and is selected from circular or polygonal shape.In addition, the width summation of first processing module and second processing module preferably is equal to or greater than the width of shift module.Semiconductor manufacturing facility preferably between shift module and first processing module and second processing module and between shift module and load lock chamber, further comprise several the seam valve.
Each first processing module and second processing module preferably comprise a reaction chamber, and are used for driving governor and that gas provisioning controller, to the reaction chamber supply gas is used to drive related process module and are used for resource provisioning unit to reaction chamber source of supply material.
First processing module is preferably separated 30cm or distance still less with second processing module.
According to a further aspect in the invention, provide a kind of semiconductor manufacturing facility, it comprises: a plurality of shift modules parallel to each other; One first processing module and one second processing module, it is connected respectively to the first surface and the second surface of each shift module, and location parallel to each other; Load lock chamber with the 3rd surface that is connected to each shift module.
Preferably, a plurality of first processing modules and second processing module that is connected to a plurality of shift modules is configured in parallel.
Description of drawings
From following detailed description in conjunction with the accompanying drawings, can more be expressly understood aforementioned and other purpose and feature of the present invention, wherein:
Fig. 1 is the schematic diagram of the conventional semiconductor manufacturing facility of explanation;
Fig. 2 is the schematic diagram of explanation according to the semiconductor manufacturing facility of one embodiment of the invention;
Fig. 3 is deposited on the chart of shift module according to one embodiment of the invention processing module for explanation;
Fig. 4 a and Fig. 4 b are respectively the chart of explanation according to the structure of the processing module of one embodiment of the invention;
Fig. 5 is to the schematic diagram of Fig. 7 for explanation semiconductor manufacturing facility according to another embodiment of the invention; With
Fig. 8 and Fig. 9 are respectively the cross-sectional view of explanation according to the semiconductor manufacturing facility of other embodiments of the invention.
Embodiment
Hereinafter will describe the preferred embodiments of the present invention in detail referring to accompanying drawing, wherein similar elements is represented by same reference numbers.Should be appreciated that to the invention is not restricted to embodiments disclosed herein, and can various modifications or substitute and realize.The those skilled in the art should understand that embodiments disclosed herein are used for complete understanding of the present invention.
Fig. 2 is the schematic diagram of explanation according to the semiconductor manufacturing facility of one embodiment of the invention.
Referring to Fig. 2, semiconductor manufacturing facility of the present invention comprises a shift module 110 and is assemblied in the processing module 130a and the 130b (also can be represented by reference number 130) of described shift module 110 at least two vicinities on every side.Semiconductor manufacturing facility of the present invention can further comprise a cooling chamber 140 and that is used to cool off Semiconductor substrate and be used to receive the load lock chamber 120 that is used to handle or be in the Semiconductor substrate of wait state after described processing.Alternatively, semiconductor manufacturing facility of the present invention can further comprise: one is used to aim at the flat site of substrate to carry out the flat site aligner (not shown) of described processing; One substrate storage lift (not shown); And be placed in seam valve (not shown) between shift module 110 and each processing module 130.
The center that shift module 110 is positioned at semiconductor manufacturing facility is loaded into processing module 130a and 130b with the substrate that will be in wait state in load lock chamber 120 or from processing module 130a and 130b unloading.For this purpose, shift module 110 comprises the transfer mechanical arm 145 that the substrate that the substrate that is in wait state can be loaded into after maybe can will handling in the processing module 130 is unloaded to load lock chamber 120 from processing module 130.In addition, according to the present invention, that the periphery of shift module 110 has is round-shaped, elliptical shape or other polygonal shape, for example, and rectangular shape, pentagon shaped, hexagonal shape, octagon-shaped etc.In the present embodiment, as shown in Figure 2, shift module 110 has the hexagon periphery.Load lock chamber 120 is along two lower surfaces assembling of hexagon shift module 110, and two processing module 130a and 130b are assembled to respectively towards two upper surfaces of the hexagon shift module 110 of two lower surfaces of hexagon shift module 110.Hereinafter will describe processing module 130 and be deposited on shift module 110.Cooling chamber 140 is assembled to another surface (zone between processing module and load lock chamber) of shift module 110.In addition, shift module 110 can comprise a plurality of transfer mechanical arms 145 mentioned above, and making can be with the substrate load/unload in different disposal chamber 130.
Each processing module 130a and 130b comprise a resource provisioning unit 36 that is used for carrying out the course of reaction supply extra resource that controller 134 and that the reaction chamber 132, of making the semiconductor device process is used for the operation of control treatment module 130a and 130b carries out according to reaction chamber 132.Each processing module 130a and 130b can further comprise an outlet.Each processing module 130a and 130b can further comprise the RF energy generator that is used for producing plasma in reaction chamber.
At this, the patterning chamber that is used for depositing the deposition chambers of predetermined semiconductor layer or be used for formation predetermined pattern at least one substrate at least one substrate can be used as reaction chamber 132.The patterning chamber comprises etching chamber and ash chamber, and deposition chambers can comprise various chambers according to the type of semiconductor layer.It should be noted that to the invention is not restricted to these chambers, and be used to make the various chambers of semiconductor chip applicable to the present invention.For example, expose chamber applicable to the present invention.
In the present embodiment, as shown in Figure 2, reaction chamber 132 is applicable to the deposition of carrying out semiconductor layer or carries out four patterned process on the substrate simultaneously.Controller 134 comprises a driving governor and that is used to drive processing module 130a and 130b and is used for gas provisioning controller to reaction chamber 132 supply gas.Hereinafter these devices will be described.
Each seam valve is connected a side of processing module 130, so that processing module 130 is connected to shift module 110, and is connected the opposite side of the periphery of shift module 110.
Processing module 130 arrangements located adjacent one another are tilted simultaneously toward each other.Contiguous first and second processing module 130a and 130b can make and separate about 100cm or still less therebetween through settling.In other words, as shown in Figure 2, the first and second processing module 130a and 130b can be through settling to contact with each other or to make and separate a preset distance therebetween through settling.Preferably, first and second contiguous processing module 130a and 130b make therebetween maximum separation 50cm or still less through settling, and be simultaneously parallel to each other.More preferably, separate 30cm or littler distance.More preferably, separate 20cm or littler distance.Described separation permission equipment is easier to safeguard.At this moment, when the separation between the processing module becomes excessive, then can appear at the problem that lowers efficiency in the zone of semiconductor manufacturing facility of the present invention.
Will be referring to the deposition and the structure of graphic description processing module 130.
Fig. 3 is the chart of explanation according to the deposition of the processing module of the embodiment of the invention, and Fig. 4 a and 4b are respectively the chart of explanation according to the structure of the processing module of embodiment.
Referring to Fig. 3, the conventional treatment module is mounted to the peripheral surface of hexagon shift module 110, make the angle θ 3 between the related peripheral surface of the longitudinal axis of each processing module and shift module 110 be the right angle, allow the far-end of processing module extensively to stretch whereby with respect to the center of shift module 110.
On the contrary, according to the present invention, the first and second processing module 130a and 130b being close to first and second surfaces of shift module 110, make respectively the first and second surface definition, one acute angles with shift module 110 through assembling.
Preferably, the angle θ 4 between the relevant surfaces of vertical line of each processing module 130 (that is longitudinal axis) and shift module 110 is an acute angle.In this way, contiguous processing module 130 is placed on the peripheral surface of shift module 110, makes closer to each other.Preferably, the angle θ 4 between the relevant surfaces of the vertical line of each processing module 130 and shift module 110 is in the scope of 10 to 90 degree.More preferably, angle θ 4 is in the scope of 35 to 60 degree.As the angle θ 4 between the relevant surfaces of the vertical line of each processing module 130 and shift module 110 during less than aforesaid scope, first and second processing module 130 is overlapping, and then can not be placed on the surface of shift module 110.On the contrary, as angle θ 4 during greater than scope mentioned above, space of the present invention reduces effect and reduces.Described angle can change in aforesaid scope according to the shape that is provided in the shift module 110 under the processing module.At this moment, load lock chamber 120 is connected to the 3rd surface of shift module 110.
According to the present invention, processing module 130 is located adjacent one another, and is assembled to two contiguous peripheral surfaces of shift module 110 symmetrically.That is to say that contiguous processing module 130a and 130b minute surface are settled symmetrically.For example, the inlet that is used for the first processing module 130a of load substrates is positioned at the right side, and the inlet that is used to load the second processing module 130b of other substrate simultaneously is positioned at the left side.Perhaps, two contiguous processing modules 130 can make and can be contacted with each other by two defined zenith directions of contiguous peripheral surface of shift module 110 through settling.In addition, need the first and second processing module 130a and 130b to be installed in parallel with each other, simultaneously separated from one another with the direction of longitudinal axis.
Simultaneously, the overall width of the first and second processing module 130a and 130b (that is the transverse width in the plane of Fig. 2) is equal to or greater than the width that is positioned at the shift module 110 under the first and second processing module 130a and the 130b.In this way, the substrate of the size with increase may be installed in processing module 130a and 130b, and a large amount of substrates may be installed in single chamber.Yet the size of the increase of shift module 110 does not allow reducing as the equipment size by the effect that the present invention obtained.
In addition, be connected to definition one predetermined angular between the contiguous seam valve of contiguous first and second processing module 130a and 130b.That is to say that described seam valve defines the interior angle of 60 to 170 degree respectively between settling with the contiguous seam valve that is being connected to contiguous first and second processing module 130a and 130b.Preferably, the interior angle between the seam valve is in 110 to 150 degree scopes.As a result, the situation of the comparable arranged parallel seam of the conveying of substrate valve is simple.For obtaining this structure, the first and second processing module 130a and 130b can settle as mentioned above located adjacent one anotherly.
Simultaneously, as indicated above in conventional equipment, the angle θ 1 between the surface of processing module and the peripheral surface of shift module is about 90 degree.Yet according to the present invention, the interior angle θ 2 between the peripheral surface of the neighbouring surface of the first and second processing module 130a and 130b and shift module 110 is 90 degree or bigger.Because the first and second processing module 130a and 130b are located adjacent one another, so can not infinitely increase the described interior angle that defines between neighbouring surface and the peripheral surface.Therefore, having the interior angle that is defined in 90 to the 165 degree scopes is effectively, and preferably in the scopes of 100 to 150 degree.
According to the present invention, processing module 130 can have pentagonal cross section, and the regional A and the B of the position of controller 134 and resource provisioning unit 136 and conventional module change to some extent.In addition, the conduit of the position of conduit in each processing module and distribution and conventional module and the position of distribution change to some extent.The position that is used to install the substrate support member of substrate also can change to allow to adjust the angle between the mechanical arm that is defined in processing module and shift module.
Equally, processing module 130a and 130b settle close to each other with the direction (that is, with the direction of neighbouring surface) on shift module summit, allow to eliminate the space (for example, regional A and B) of Fig. 3 whereby.In addition, suppose that conventional semiconductor manufacturing facility has the 1 zone (T1 among Fig. 1 * H1), semiconductor manufacturing facility so of the present invention has 0.4 to 0.8 zone, allows to realize in 40% to 80% zone of conventional equipment the manufacturing efficient identical with conventional semiconductor manufacturing facility whereby.More particularly, conventional semiconductor manufacturing facility has 3, the T1 of 600mm and 2, and the H1 of 700mm, and semiconductor manufacturing facility of the present invention has 2, the T2 of 000mm and 2, the H2 of 800mm.As indicated above, suppose that conventional semiconductor manufacturing facility has 100% zone, semiconductor manufacturing facility so of the present invention has about 58% zone, allows whereby to realize the manufacturing efficient identical with conventional semiconductor manufacturing facility with less zone.In addition, as shown in Figure 3, because the also no change of the position of the treatment chamber 132 in each processing module and conventional treatment module, so but the variation of moving of energy minimization transfer tool arm 145.Processing module 130 can have other polygon cross section.
As shown in Fig. 4 a and Fig. 4 b, driving governor 135 and form the gas provisioning controller 133 of controller 134 can different shape and structure be positioned at around the reaction chamber 132.That is to say, because driving governor 135 comprises various circuit and transducer, and gas provisioning controller 133 comprises various valves and conduit, so the configuration of driving governor 135 and gas provisioning controller 133 is not limited to a customized configuration, and can change according to the feature and the purpose of equipment.As indicated above, driving governor 135 and gas provisioning controller 133 with the minute surface balanced configuration in each contiguous processing module 130a and 130b, and thereby the various assemblies in each processing module (for example, valve, conduit and distribution) are preferably with the minute surface balanced configuration.
According to the present invention, the direction that resource provisioning unit 136 can neighbouring surface enlarges, and the various source materials that are used for semiconductor chip whereby can be fed to semiconductor manufacturing facility effectively from it.The position of resource provisioning unit 136 can change to contiguous described neighbouring surface from the edge of the first and second processing module 130a and 130b or away from the zone of described neighbouring surface.Various processing can be carried out by the ability of maximization resource provisioning unit 136 to be enlarged in single processing module 130.
Fig. 5 is the schematic diagram of explanation according to the semiconductor manufacturing facility of other embodiments of the invention to Fig. 7.
, comprise according to the semiconductor manufacturing facility of present embodiment: a pentagon or octagonal shift module 110 to as shown in Fig. 7 as Fig. 5; First and second processing module 130a and the 130b, it is connected to first and second surfaces of shift module 110, and is simultaneously parallel to each other; With a load lock chamber 120 that is connected to the 3rd surface of shift module 110.
As shown in Figure 5, the first and second processing module 130a and 130b are disposed on first and second surfaces of vicinity of octagon shift module located adjacent one anotherly, make the two towards each other.At this moment, the surface of the vicinity of the first and second processing module 130a and 130b contacts with each other.Perhaps, as shown in Figure 6, the first and second processing module 130a and 130b are configurable on two contiguous peripheral surfaces of pentagon shift module 110, and location parallel to each other.Perhaps, as shown in Figure 7, the first and second processing module 130a and 130b are configurable on two contiguous peripheral surfaces of octagon shift module 110, and parallel surface towards each other.At this moment, parallel surface towards each other the first and second processing module 130a and the slit between the 130b be preferably 1m or littler.More preferably, the slit is 30cm or littler.
Other structure of the semiconductor manufacturing facility of present embodiment with as those structures of embodiment illustrated in fig. 3 identical.
Equally, semiconductor manufacturing facility of the present invention is unrestricted in the kind and the function aspects of the shape of shift module and treatment chamber.In addition, semiconductor manufacturing facility of the present invention allows the productivity ratio identical with conventional semiconductor manufacturing facility in only 60% the zone in conventional semiconductor control equipment zone, and also allows to carry out in single treatment chamber various processing.
According to the present invention, a plurality of processing modules and shift module are configurable on a line, make to dispose a large amount of processing modules in the confined space.To be described referring to graphic about this respect, and wherein be repeated in this description and to omit hereinafter.
Fig. 8 and Fig. 9 are respectively the cross-sectional view of explanation semiconductor manufacturing facility according to other embodiments of the present invention.
Referring to Fig. 8 and Fig. 9, a plurality of shift module 110-1 are placed on the line to 110-n, wherein each shift module have at least two processing module 130a-1 being connected to it to 130a-n and 130b-1 to 130b-n.That is to say that semiconductor manufacturing facility of the present invention comprises: a plurality of shift module 110-1 separated from one another are to 110-n; To 130b-n, it is placed in shift module 110-1 respectively to the first and second contiguous separately surfaces of 110-n to the first and second processing module 130a-1 to 130a-n and 130b-1, and first and second surfaces with shift module define an acute angle respectively simultaneously; Be connected to shift module 110-1 to the load lock chamber 120-1 on the 3rd surface separately of 110-n to 120-n.
Simultaneously, the first and second processing module 130a-1 arrive separately first and second surfaces of a plurality of shift module 110-1 to 110-n to 130a-n and 130b-1 to the 130b-n preferred fit, and location parallel to each other.
At this, preferably, along with shift module 110-1 is placed in the equipment to the 110-n order, the first and second processing module 130a-1 that are connected to a shift module 110-1 are contiguous with 130b-1 or contact other processing module 130a-2 and the 130b-2 that is connected to next processing module 110-2.More preferably, processing module is through settling so that parallel to each other.That is to say, as shown in Figure 8, have the first and second processing module 130a-1 that are connected to it the 1st to n shift module 110-1 to 130a-n and 130b-1 to 130b-n to 110-n through configuration continuously, make the second processing module 130b-1 of the shift module 110-1 that wins be parallel to the first processing module 130a-2 of the second shift module 110-2.
In addition, for ease of safeguarding, resource provisioning unit 136-1 can dispose in the following manner to 136-n, and for example, resource provisioning unit 136-1 and 136-2 are configured to the first and second processing module 130a-1 that are connected to a shift module 110-1 and the opposite end of 130b-1.Perhaps, the resource provisioning unit 136-2 of the resource provisioning unit 136-1 of the second processing module 130b-1 and the first shift module 130a-2 can generally be used in the state of the second processing module 130b-1 of the first shift module 110-1 of the first processing module 130a-2 that is configured to contact the second shift module 110-2.
In this way, even disposed a plurality of modules, the space that is used for configuration module still can significantly reduce, and compared with prior art, can provide more block configuration in the confined space.That is to say that the width of supposing conventional equipment is 1, the width of equipment so of the present invention is in 0.6 to 0.95 scope.Therefore, for example,, need the length of a 10m respectively for settling five shift modules continuously with the conventional treatment module that is connected to it.Yet, according to the present invention, compare with conventional equipment, about 20% if equipment of the present invention reduces on width, the length of 8m is enough to five shift modules that configuration continuously has the processing module that is connected to it respectively so.That is to say, may in the length of 10m, dispose six shift modules, the space that significantly reduces to be used to dispose a plurality of modules whereby, and compared with prior art, allow more block configuration in the confined space.
Simultaneously, although a plurality of load lock chamber 120-1 are illustrated as separated from one anotherly in graphic to 120-n, the present invention is not limited to this structure.Perhaps, being close to load lock chamber 120-1 can closer to each other and/or contact to 120-n.
According to the present invention, processing module and shift module can otherwise dispose.For example, in Fig. 8, being connected to shift module 110-1 can the vertical symmetry configuration to 130b-n to 130a-n and 130b-1 to 130a-1 to the processing module of the vicinity of 110-n.That is to say that a plurality of processing modules are disposed on the shift module 101-1 continuously.On the contrary, in Fig. 9, being connected to shift module 110-1 can the horizontal symmetrical configuration to 130b-n to 130a-n and 130b-1 to 130a-1 to the processing module of the vicinity of 110-n.
First and second processing modules with the vicinity that is connected to it can dispose to 110-n in the following manner continuously to the shift module 110-1 of 130a-1 to 130a-n and 130b-1 to 130b-n, that is, but the first and second contiguous processing modules 130a-1 is disposed to the 130b-n alternatively up and down to 130a-n and 130b-1.More particularly, a plurality of processing module 130a-1 dispose to 110-n to 130b-n and shift module 110-1 in the following manner to 130a-n and 130b-1, promptly, for example, the first and second processing module 130a-1 of the first shift module 110-1 and 130b-1 be configuration upwards, the first and second processing module 130a-2 and the 130b-2 of the second shift module 110-2 dispose downwards, and the then first and second processing module 130a-3 and the 130b-3 upwards configuration again of the 3rd shift module 110-3.
As a result, be connected to shift module 110-1 can be provided for service equipment to the both sides of 130b-n to 130a-n and 130b-1 to the processing module 130a-1 of 110-n enough spaces.
As may be obvious that from above describing, according to the present invention, processing module is closer to each other or contact on shift module, reduces the occupied zone of semiconductor manufacturing facility whereby and can not reduce manufacturing efficient.
In addition, the resource provisioning unit can enlarge towards the surface of the vicinity of contiguous processing module, makes the various source materials that are used to form semiconductor chip to be fed to semiconductor manufacturing facility by the resource provisioning unit that enlarges.
In addition, can in single processing module, carry out various processing.
Should be understood that to illustrative purposes and described aforesaid embodiment and accompanying drawing, and the present invention is subjected to the restriction of following claims.In addition, be understood by those skilled in the art that, can under the situation that does not break away from the scope and spirit of setting forth as additional claims of the present invention, allow various modifications, interpolation and alternative.
Claims (13)
1. semiconductor manufacturing facility, it comprises:
One shift module;
One first processing module and one second processing module, it is assembled to a first surface and a second surface of described shift module respectively, define an acute angle with the described first surface and the described second surface of described shift module respectively simultaneously, described first surface and described second surface are located adjacent one another; With a load lock chamber that is connected to one the 3rd surface of described shift module.
2. equipment according to claim 1 wherein vertically defines one 10 to 90 angles of spending in one of each described first surface and second surface and each processing module between the week axle.
3. equipment according to claim 2, wherein said first processing module is separated a 30cm or distance still less with described second processing module.
4. semiconductor manufacturing facility, it comprises:
A plurality of shift modules;
One first processing module and one second processing module, it is assembled to a first surface and a second surface of each shift module respectively, define an acute angle with the described first surface and the described second surface of each shift module respectively simultaneously, described first surface and described second surface are located adjacent one another; With
One is connected to the load lock chamber on one the 3rd surface of each shift module.
5. semiconductor manufacturing facility, it comprises:
One shift module;
One first processing module and one second processing module, it is connected respectively to a first surface and a second surface of described shift module, and is simultaneously parallel to each other; With
One is connected to the load lock chamber on one the 3rd surface of described shift module.
6. equipment according to claim 5, wherein said first processing module and described second processing module are separated, and a feasible direction with a longitudinal axis is parallel to described second processing module.
7. equipment according to claim 5, wherein said shift module have one and are selected from a circular and polygonal shape.
8. equipment according to claim 5, the width summation of wherein said first processing module and second processing module is equal to or greater than a width of described shift module.
9. equipment according to claim 5, it further comprises: the seam valve between described shift module and described first processing module and second processing module and between described shift module and described load lock chamber.
10. equipment according to claim 5, wherein each described first processing module and described second processing module comprise:
One reaction chamber;
One is used for the gas provisioning controller to described reaction chamber supply gas;
One is used to drive the driving governor of a related process module; With
One is used for supplying to described reaction chamber the resource provisioning unit of a source material.
11. according to the described equipment of arbitrary claim in the claim 5 to 9, wherein said first processing module is separated a 30cm or distance still less with described second processing module.
12. a semiconductor manufacturing facility, it comprises:
A plurality of shift modules parallel to each other;
One first processing module and one second processing module, it is connected respectively to a first surface and a second surface of each shift module, and location parallel to each other; With
One is connected to the load lock chamber on one the 3rd surface of each shift module.
13. equipment according to claim 12 wherein is connected to described a plurality of described first processing module and the described second processing module configured in parallel of described a plurality of shift modules.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20040055209 | 2004-07-15 | ||
| KR1020040055209 | 2004-07-15 | ||
| KR1020050053297 | 2005-06-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1722362A true CN1722362A (en) | 2006-01-18 |
Family
ID=35912538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005100841667A Pending CN1722362A (en) | 2004-07-15 | 2005-07-14 | Semiconductor manufacturing apparatus |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101123624B1 (en) |
| CN (1) | CN1722362A (en) |
| TW (1) | TW200618099A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847737A (en) * | 2012-02-29 | 2017-06-13 | 应用材料公司 | Decontamination and strip process chamber in configuration |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001127044A (en) * | 1999-10-29 | 2001-05-11 | Hitachi Ltd | Vacuum processor, and vacuum processing system |
-
2005
- 2005-06-21 KR KR1020050053297A patent/KR101123624B1/en not_active IP Right Cessation
- 2005-07-14 TW TW094123829A patent/TW200618099A/en unknown
- 2005-07-14 CN CNA2005100841667A patent/CN1722362A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847737A (en) * | 2012-02-29 | 2017-06-13 | 应用材料公司 | Decontamination and strip process chamber in configuration |
| US10566205B2 (en) | 2012-02-29 | 2020-02-18 | Applied Materials, Inc. | Abatement and strip process chamber in a load lock configuration |
| US10943788B2 (en) | 2012-02-29 | 2021-03-09 | Applied Materials, Inc. | Abatement and strip process chamber in a load lock configuration |
| US12094715B2 (en) | 2012-02-29 | 2024-09-17 | Applied Materials, Inc. | Abatement and strip process chamber in a load lock configuration |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060048449A (en) | 2006-05-18 |
| KR101123624B1 (en) | 2012-03-20 |
| TW200618099A (en) | 2006-06-01 |
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