CN1719338B - Ultraviolet ray solidification cation type etching glue for nano embossing - Google Patents
Ultraviolet ray solidification cation type etching glue for nano embossing Download PDFInfo
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- CN1719338B CN1719338B CN 200510043034 CN200510043034A CN1719338B CN 1719338 B CN1719338 B CN 1719338B CN 200510043034 CN200510043034 CN 200510043034 CN 200510043034 A CN200510043034 A CN 200510043034A CN 1719338 B CN1719338 B CN 1719338B
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Abstract
The present invention discloses an UV photocuring cationic etchant for nano press-printing process. Its composition includes 10%-60% of fatty epoxide resin, 0%-30% of organic silicone epoxy resin, 10%-40% of vinyl ether, 0%-20% of polycaprolactone polyalcohol, 0%-15% of long-chain fatty epoxide resin, 1%-10% of photo-initiator and 0%-8% of adjuvant. The photo-initiator is one or more than one compounds selected from diaryl iodine onium phosphate, triaryl sulphur onium hexafluoroantimonate or triaryl sulphur onium hexafluoroarsenate, and the adjuvant includes organic silane coupling agent, organic silane flow agent and organic alcohols or polyether alkyl comodified silicone oil defoaming agent.
Description
Technical field
The present invention relates to a kind of etching glue, the ultraviolet ray solidification cation type etching glue that uses during particularly a kind of nano impression is made.
Background technology
In traditional photoetching process ic manufacturing process, adopt the mask exposure method to form the shape or the transoid of integrated circuit in the appointed area of photoresist, its employed photoresist is positive photoresist or negative photoresist, for the ease of forming certain thickness film, positivity or negative photoresist all contain volatile solvent, need to dry the PROCESS FOR TREATMENT of volatile solvent after applying film forming.But make in fine feature (the comprising integrated circuit) technology at nano impression, positivity or negative photoresist are owing to contain volatile solvent, shrink shortcoming such as big and can not be suitable for fully.
It is at first to go up at base material (polysilicon or other material) to apply the liquid photocuring etching glue of one deck that nano impression is made fine feature (comprising integrated circuit), to be carved with then under the suprasil template of fine feature (100-500 nanometer) and be pressed on the liquid etching glue, by the time after the liquid etching glue is extruded in the microlaser cavity with fine feature fully, shine exposure with ultraviolet light, liquid etching glue generation photopolymerization reaction after UV-irradiation and solidifying, thereby on etching glue, form the transoid fine feature corresponding with the micro-mould feature, open mould then and the etching glue after the demoulding is carried out plasma etching, fine feature transfer is formed to the base material have the integrated circuit or the fine feature of single layer structure.In this process, because conventional lithography glue (positivity or negative photoresist) all contains volatile solvent, micro-mould presses down volatile solvent is enclosed in the microlaser cavity after applying, and exposure can produce bubble or make the solidification intensity step-down when solidifying, thereby makes the replica deterioration in accuracy; Make solvent evaporates if carry out back baking processing after applying, through after the etching glue handled of baking through becoming solid or semisolid, the process that presses down of suprasil micro-mould can not squeeze into fine feature die cavity with solid or semi-solid etching glue substantially, thereby the inapplicable nano impression manufacturing process of traditional etching glue.
Summary of the invention
The object of the present invention is to provide a kind of ultraviolet ray solidification cation type etching glue for nano embessing, solved in the nano impression manufacturing process, the tradition etching glue easily produces bubble or makes the solidification intensity step-down, thereby makes the replica deterioration in accuracy or can not fully squeeze into the problem of the fine feature die cavity of mould.
The technical solution adopted in the present invention is, ultraviolet ray solidification cation type etching glue for nano embessing, and by weight percentage, it consists of:
Alicyclic epoxy 10%～60%;
γ-glycidyl ether oxygen propyl trimethoxy silicane 3% or β-(3,4 epoxycyclohexyl)-ethyl trimethoxy silane 10%;
Vinyl ether 10%～40%;
Polycaprolactone dibasic alcohol or polycaprolactone trihydroxy alcohol 10%, perhaps the polycaprolactone trihydroxy alcohol 20%;
1,2-epoxy radicals dodecane 5%;
Light trigger 1%～10%;
Auxiliary agent 0%～8%; The weight sum of each component is 100%,
Wherein, light trigger is selected from following one or more composition: diaryl iodine phosphate, triaryl sulphur hexafluoro antimonate or triaryl sulphur hexafluoro arsenate,
Auxiliary agent comprises organic silane coupling agent, organosilicon alkanes levelling agent, organic alcohols or polyoxyalkylene alkyl co-modified silicone oil defoamer.
Characteristics of the present invention also are:
Alicyclic epoxy is selected from following one or more composition: 3,4-epoxy radicals hexahydrobenzoid acid-3 ', 4 '-epoxy radicals cyclohexyl methyl esters, two-(3,4-epoxy radicals cyclohexyl)-adipate, bicyclopentadiene dioxide, 3,4-epoxy radicals-6-methyl-cyclohexyl base formic acid-3 ', 4 '-epoxy radicals-6 '-the methylcyclohexyl methyl esters, α-titanium dioxide dicyclo amyl ether, β-titanium dioxide dicyclo amyl ether, bicyclopentadiene dioxide glycol ether or vinylcyclohexene monoxide.
Organosilicon epoxy resin is selected from following one or more composition: linear, bodily form polydimethylsiloxane--modified bis cyclohexane epoxy, β-(3,4 epoxycyclohexyl)-ethyl trimethoxy silane, γ-glycidyl ether oxygen propyl trimethoxy silicane.
Vinyl ether is selected from following one or more composition: triethylene glycol divinyl ether, 1,4-cyclohexyl dimethanol divinyl ether, glycerol carbonate propenyl ether or dodecyl vinyl.
Polycaprolactone polyol is polycaprolactone dibasic alcohol or polycaprolactone trihydroxy alcohol.
Long-chain fat family epoxy is 1,2-epoxy radicals hexadecane or 1,2-epoxy radicals dodecane.
Ultraviolet ray solidification cation type etching glue for nano embessing of the present invention has following performance:
1. low viscosity is convenient to the film of spin coating coating processes operation formation below 1 micron.
2. low the contraction guarantees the least amount of deformation in the solidification process, and small deformation can guarantee high replica precision.
3. high curing rate can guarantee high nano impression replica efficient.
4. film forming good stability, film is even, guarantees impression replica precision and efficient.
5. tack is good, and base material obtains better protect in the time of can making etching, and fine feature is not lost type after etching.
6. corrosion stability is good, can improve the etching efficient of base material, guarantees etching precision.
Description of drawings
Fig. 1 is that nano impression is made fine feature process schematic diagram, and wherein a is the process that presses down of quartz template, and b is an etching glue curing molding process, and c is the shape after the demoulding.
Fig. 2 is the shape of etching glue behind impression.
Among the figure, 1. quartz template, 2. fine die cavity, 3. etching glue, 4. silicon wafer.
Embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments.
Ultraviolet ray solidification cation type etching glue for nano embessing of the present invention, by weight percentage, it consists of: alicyclic epoxy 10%～60%, organosilicon epoxy resin 0%～30%, vinyl ether 10%～40%, polycaprolactone polyol 0%～20%, long-chain fat family epoxy 0%～15%, light trigger 1%～10%, auxiliary agent 0%～8%, the weight sum of each component is 100%, wherein, light trigger is selected from following one or more composition: diaryl iodine phosphate, triaryl sulphur hexafluoro antimonate or triaryl sulphur hexafluoro arsenate, auxiliary agent comprises organic silane coupling agent, organosilicon alkanes levelling agent, organic alcohols or polyoxyalkylene alkyl modified silicon oil defoamer.
Alicyclic epoxy in the etching glue of the present invention and organosilicon epoxy resin are film forming matters, it is the main component of decision ultraviolet light polymerization etching glue physical and mechanical properties, many important performances to etching glue have very big influence as rigidity, viscosity, curing rate, adhesion, pliability, water resisting property, etch resistant properties etc.Alicyclic epoxy has bigger open loop tension force owing to containing the epoxy radicals that links to each other with the saturated fat hexatomic ring, can carry out cationic ring-opening polymerization, because saturated hexa-atomic alicyclic ring exists, can give etching glue better hardness and etch resistance, by adjusting the segmented structure between the alicyclic ring, make etching glue have certain pliability simultaneously, can not cause the brittle failure of fine characteristic when being convenient to curing and demolding.Alicyclic epoxy is selected from following one or more composition among the present invention: 3,4-epoxy radicals hexahydrobenzoid acid-3 ', 4 '-epoxy radicals cyclohexyl methyl esters, two-(3,4-epoxy radicals cyclohexyl)-adipate, bicyclopentadiene dioxide, 3,4-epoxy radicals-6-methyl-cyclohexyl base formic acid-3 ', 4 '-epoxy radicals-6 '-the methylcyclohexyl methyl esters, α-titanium dioxide dicyclo amyl ether, β-titanium dioxide dicyclo amyl ether, bicyclopentadiene dioxide glycol ether or vinylcyclohexene monoxide are when selecting more than one compositions, there is not the requirement of content ratio between each component, as long as the ratio of total content in etching glue satisfies 10%～60%.
Organosilicon epoxy resin also has epoxy bond and cationic ring-opening polymerization can take place, simultaneously because the existence of silicon oxygen bond can give etching glue lower surface energy, make etching glue when being stamped the type-approval process and the demoulding, adhesive attraction between etching glue and the micro-mould is little and be convenient to the demoulding, also can improve mould access times and life-span simultaneously.Alicyclic epoxy and organosilicon epoxy generation ring-opening polymerization, polymerization process is the transformation from the covalent bond to the covalent bond, thereby has the little characteristics of volumetric contraction.Organosilicon epoxy resin is selected from following one or more composition among the present invention: linear, bodily form polydimethylsiloxane--modified bis cyclohexane epoxy, β-(3,4 epoxycyclohexyls)-ethyl trimethoxy silane, γ-glycidyl ether oxygen propyl trimethoxy silicane, when selecting more than one compositions, there is not the requirement of content ratio between each component.
The alkene ether structure that vinyl ether has makes it can carry out cationic photopolymerization, simultaneously, vinyl ether has dilution effect preferably owing to having very low viscosity, can make etching glue have lower viscosity, thereby be convenient to carry out the even adhesive process of spin coating, form the submicron order film.Vinyl ether is selected from following one or more composition among the present invention: triethylene glycol divinyl ether, 1,4-cyclohexyl dimethanol divinyl ether, glycerol carbonate propenyl ether or dodecyl vinyl, when selecting more than one combinations, there is not the requirement of content ratio between each component yet.
Have hydroxyl in the polycaprolactone polyol, thereby can participate in cationic polymerization, polycaprolactone polyol can be given the good toughness of etching glue and improve crosslinking degree simultaneously, thereby makes etching glue have hard and tough characteristics, improves the corrosion stability of etching glue.Preferred polycaprolactone dibasic alcohol of polycaprolactone polyol or polycaprolactone trihydroxy alcohol among the present invention.
Long-chain fat family epoxy has an epoxy radicals, the kation ring-opening reaction can take place in the activated monomer that belongs to simple function group, and long aliphatic chain is given etching glue good flexible and paving property in the molecule, the low viscosity that it had simultaneously can also play diluting effect, reduces the viscosity of etching glue.Long-chain fat family epoxy is preferred 1 among the present invention, 2-epoxy radicals hexadecane or 1,2-epoxy radicals dodecane.
Light trigger consumption in the photocuring etching glue is very little, but the curing rate of etching glue, storage stability etc. are had very big influence.The present invention adopts diaryl iodine phosphate, and one or more composition does not have the requirement of content ratio in triaryl sulphur hexafluoro antimonate or the triaryl sulphur hexafluoro arsenate in the said composition.
Auxiliary agent plays in etching glue and eliminates bubble, the formation film is smooth and the effect of stable state film.Auxiliary agent of the present invention comprises organic silane coupling agent, organosilicon alkanes levelling agent, organic alcohols or polyoxyalkylene alkyl modified silicon oil defoamer, can also add antioxidant and thermal stabilizer etc. in the auxiliary agent.
When making etching glue of the present invention, the component of selective light initiating agent at first: diaryl iodine phosphate, one or more composition in triaryl sulphur hexafluoro antimonate or the triaryl sulphur hexafluoro arsenate, the control light trigger accounts for 1%～10% of total etching glue weight, when containing diaryl iodine phosphate in the initiating agent, diaryl iodine phosphate is dissolved with vinyl ether under 50 ℃, be cooled to room temperature after having dissolved, again triaryl sulphur hexafluoro antimonate or triaryl sulphur hexafluoro arsenate are added and stir, the vinyl ether consumption is 10%～40% of a general assembly (TW) ratio, forms homogeneous solution A; With general assembly (TW) than the alicyclic epoxy that is respectively 10%～60%
0%～30% organosilicon epoxy resin
0%～20% polycaprolactone polyol
0%～15% long-chain fat family epoxy adding apparatus high speed stirs, mix and form uniform liquid B after 2 hours, add solution A then, mix again to stir and obtained uniform liquid C in 2 hours, add general assembly (TW) afterwards while stirring successively than auxiliary agents such as the defoamer that is 0%～8%, levelling agent, coupling agents, add to stir again behind the auxiliary agent and promptly obtained ultraviolet ray solidification cation type etching glue for nano embessing in 2 hours.
What Fig. 1 showed is the process principle figure that nano impression is made fine feature.Base material is selected silicon wafer 4 for use, with etching glue 3 even spin coatings or be sprayed on silicon wafer 4, the suprasil template that will be carved with fine feature (100-500 nanometer) then is pressed in for 1 time on the liquid etching glue 3, by the time after liquid etching glue 3 is extruded in the microcavity of the fine die cavity 2 with fine feature fully, shine exposure 0.1 second～1 second with ultraviolet light, photopolymerization reaction takes place and solidifies in liquid etching glue 3 after UV-irradiation, thereby on etching glue 3, form the transoid fine feature corresponding with impressing mould 2 features, open mould then and the etching glue after the demoulding 3 is carried out plasma etching, fine feature transfer is formed to the silicon wafer 4 have the integrated circuit or the fine feature of single layer structure.
Embodiment 1
At first choose the potpourri of diaryl iodine phosphate and triaryl sulphur hexafluoro antimonate and do light trigger, the weight of light trigger is 3% of total etching glue weight, wherein diaryl iodine phosphate accounts for 70% of light trigger, triaryl sulphur hexafluoro antimonate accounts for 30% of light trigger, get the triethylene glycol divinyl ether of gross weight 15%, light trigger diaryl iodine phosphate is dissolved with triethylene glycol divinyl ether under 50 ℃, add the stirring of triaryl sulphur hexafluoro antimonate after being cooled to room temperature, form homogeneous solution A; Respectively with gross weight than be 53.6% 3,4-epoxy radicals cyclohexanecarboxylic acid-3 ', 4 '-epoxy radicals cyclohexyl methyl esters
15% linear polydimethylsiloxane-
10% polycaprolactone dibasic alcohol adding apparatus high speed stirs, mix and form uniform liquid B after 2 hours, add solution A then, mix again to stir and obtained uniform liquid C in 2 hours, add general assembly (TW) while stirring afterwards than the organic pure defoamer that is respectively 0.4%, 1% polyether-modified dimethyl siloxane levelling agent, 2% organosilicon alkanes coupling agent auxiliary agent, add to stir again behind the auxiliary agent and promptly obtained ultraviolet ray solidification cation type etching glue for nano embessing in 2 hours.
Embodiment 2
At first select general assembly (TW) and do light trigger than the potpourri that is respectively 1% diaryl iodine phosphate and 1% triaryl sulphur hexafluoro arsenate, light trigger diaryl iodine phosphate is following to 1 at 50 ℃, the dissolving of 4-cyclohexyl dimethanol divinyl ether, 1,4-cyclohexyl dimethanol divinyl ether consumption is 10% of a general assembly (TW) ratio, be cooled to room temperature after the dissolving and add triaryl sulphur hexafluoro arsenate and stir, form homogeneous solution A; With general assembly (TW) than be respectively 40% 3,4-epoxy radicals cyclohexanecarboxylic acid-3 ', 4 '-potpourri of epoxy radicals cyclohexyl methyl esters and two-(3,4-epoxy radicals cyclohexyl)-adipate of 20%
20% polycaprolactone trihydroxy alcohol adding apparatus high speed stirs, mix and form uniform liquid B after 2 hours, add solution A then, mix again to stir and obtained uniform liquid C in 2 hours, add general assembly (TW) while stirring than the polyoxyalkylene alkyl co-modified silicone oil defoamer, levelling agent and the coupling agent auxiliary agent that are 8% afterwards, add to stir again behind the auxiliary agent and promptly obtained ultraviolet ray solidification cation type etching glue for nano embessing in 2 hours.
Embodiment 3
At first select general assembly (TW) and do light trigger than the potpourri that is respectively 0.2% diaryl iodine phosphate and 0.8% triaryl sulphur hexafluoro antimonate, use the mixed liquor of glycerol carbonate propenyl ether and dodecyl vinyl to dissolve down at 50 ℃ diaryl iodine phosphate light trigger, the mixed liquor of glycerol carbonate propenyl ether and dodecyl vinyl is 40% of a general assembly (TW) ratio, be cooled to room temperature after having dissolved and add triaryl sulphur hexafluoro antimonate and stir, form homogeneous solution A; With general assembly (TW) than be respectively 10% 3,4-epoxy radicals-6-methyl-cyclohexyl base formic acid-3 ', 4 '-epoxy radicals-6 '-methylcyclohexyl methyl esters and 30% body dimethyl silicone polymer
15% 1,2-epoxy radicals hexadecane is put into the device high speed and is stirred, mix and form uniform liquid B after 2 hours, add solution A then, mix again to stir and obtained uniform liquid C in 2 hours, add general assembly (TW) afterwards while stirring than the auxiliary agent that is 4%, auxiliary agent comprises polyoxyalkylene alkyl co-modified silicone oil defoamer, levelling agent, coupling agent, antioxidant and thermal stabilizer, adds to stir behind the auxiliary agent promptly to obtain ultraviolet ray solidification cation type etching glue for nano embessing in 2 hours again.
Embodiment 4
General assembly (TW) is dissolved with dodecyl vinyl under 50 ℃ than the diaryl iodine phosphate light trigger that is 10%, and the dodecyl vinyl consumption is 30% of a general assembly (TW) ratio, forms homogeneous solution A; With general assembly (TW) than being respectively β-titanium dioxide dicyclo amyl ether of 35% and β-(3,4 epoxycyclohexyl)-ethyl trimethoxy silane of 10%
10% polycaprolactone trihydroxy alcohol
5% 1,2-epoxy radicals dodecane is put into the device high speed and is stirred, and mixes to form uniform liquid B after 2 hours, adds solution A then, mixes to stir obtaining uniform liquid C in 2 hours again, liquid C promptly is a ultraviolet ray solidification cation type etching glue for nano embessing.
Embodiment 5
General assembly (TW) is at room temperature dissolved with the glycerol carbonate propenyl ether than the triaryl sulphur hexafluoro arsenate light trigger that is 8%, and glycerol carbonate propenyl ether consumption is 25% of a general assembly (TW) ratio, forms homogeneous solution A; With general assembly (TW) than the bicyclopentadiene dioxide that is respectively 20%
27%3,4-epoxy radicals-6-methyl-cyclohexyl base formic acid-3 '
4 '-epoxy radicals-6 '-methylcyclohexyl methyl esters and γ-glycidyl ether oxygen propyl trimethoxy silicane of 3%
15% 1,2-epoxy radicals hexadecane is put into the device high speed and is stirred, mix and form uniform liquid B after 2 hours, add solution A then, mix again to stir and obtained uniform liquid C in 2 hours, add general assembly (TW) afterwards while stirring than the auxiliary agent that is 2%, auxiliary agent comprises polyoxyalkylene alkyl co-modified silicone oil defoamer, levelling agent and coupling agent, adds to stir behind the auxiliary agent promptly to obtain ultraviolet ray solidification cation type etching glue for nano embessing in 2 hours again.
Above-mentioned five kinds of ultraviolet ray solidification cation type etching glue for nano embessing are carried out various performance tests, and it the results are shown in Table 1.
Ultraviolet ray solidification cation type etching glue for nano embessing of the present invention is with employed positivity of microelectronic industry or negative photoresist are compared at present, having non-volatility solvent, low viscosity, fast, the low contraction of curing rate, high adhesion force, high corrosion stability, is that a kind of nano impression good, environmental protection is made dedicated optical curing etching glue.
Claims (3)
1. ultraviolet ray solidification cation type etching glue for nano embessing, by weight percentage, it consists of: alicyclic epoxy 10%～60%;
γ-glycidyl ether oxygen propyl trimethoxy silicane 3% or β-(3,4 epoxy cyclohexyl)-ethyl trimethoxy silane 10%;
Vinyl ether 10%～40%;
Polycaprolactone dibasic alcohol or polycaprolactone trihydroxy alcohol 10%, perhaps the polycaprolactone trihydroxy alcohol 20%;
1,2-epoxy radicals dodecane 5%;
Light trigger 1%～10%;
Auxiliary agent 0%～8%; The weight sum of each component is 100%,
Wherein, light trigger is selected from following one or more composition: diaryl iodine phosphate, triaryl sulphur hexafluoro antimonate or triaryl sulphur hexafluoro arsenate,
Auxiliary agent comprises organic silane coupling agent, organosilicon alkanes levelling agent, organic alcohols or polyoxyalkylene alkyl co-modified silicone oil defoamer.
2. according to the described etching glue of claim 1, it is characterized in that, described alicyclic epoxy is selected from following one or more composition: 3,4-epoxy radicals hexahydrobenzoid acid-3 ', 4 '-epoxy radicals cyclohexyl methyl esters, two-(3,4-epoxy radicals cyclohexyl)-adipate, bicyclopentadiene dioxide, 3,4-epoxy radicals-6-methyl-cyclohexyl base formic acid-3 ', 4 '-epoxy radicals-6 '-the methylcyclohexyl methyl esters, α-titanium dioxide dicyclo amyl ether, β-titanium dioxide dicyclo amyl ether, bicyclopentadiene dioxide glycol ether or vinylcyclohexene monoxide.
3. according to the described etching glue of claim 1, it is characterized in that described vinyl ether is selected from following one or more composition: triethylene glycol divinyl ether, 1,4-cyclohexyl dimethanol divinyl ether, glycerol carbonate propenyl ether or dodecyl vinyl.
Through becoming solid or semisolid, the process that presses down of suprasil micro-mould can not squeeze into fine feature die cavity with solid or semi-solid etching glue substantially, thereby the inapplicable nano impression manufacturing process of traditional etching glue.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200510043034 CN1719338B (en) | 2005-08-01 | 2005-08-01 | Ultraviolet ray solidification cation type etching glue for nano embossing |
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| CN 200510043034 CN1719338B (en) | 2005-08-01 | 2005-08-01 | Ultraviolet ray solidification cation type etching glue for nano embossing |
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| CN1719338B true CN1719338B (en) | 2011-07-27 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20070105040A (en) * | 2006-04-25 | 2007-10-30 | 엘지.필립스 엘시디 주식회사 | Resist composition, method of fabricating resist pattern using the same and array substrate fabricated using the same |
| CN100400555C (en) * | 2006-08-25 | 2008-07-09 | 南京大学 | Solidifiable composition material by ultraviolet light and application |
| CN101220253B (en) * | 2007-12-18 | 2012-06-20 | 杨钢 | Single-component stable luminescent device embedding composition at room temperature |
| JP4617387B2 (en) * | 2009-06-17 | 2011-01-26 | キヤノン株式会社 | Manufacturing method of fine structure |
| CN101930171B (en) * | 2009-06-26 | 2012-06-20 | 比亚迪股份有限公司 | Ultraviolet curing composition and preparation method thereof and pattern preparation method |
| CN102373406A (en) * | 2010-08-13 | 2012-03-14 | 鸿富锦精密工业（深圳）有限公司 | Film plating method |
| CN103937303B (en) * | 2014-03-21 | 2017-06-06 | 中国科学院化学研究所 | A kind of cationic polymerization hydrophilic coating materials and its application in printing plate preparation |
| CN104932197B (en) * | 2015-05-26 | 2020-01-17 | 南方科技大学 | Expansion polymerization imprinting adhesive for nanoimprint |
| CN106125502A (en) * | 2016-06-17 | 2016-11-16 | 无锡英普林纳米科技有限公司 | A kind of nano-imprinting apparatus is with photoresist |
| CN107957654A (en) * | 2017-12-22 | 2018-04-24 | 青岛理工大学 | A kind of ultraviolet light for large-area nano coining cures hybrid systems coining glue |
| TW202212480A (en) * | 2020-09-29 | 2022-04-01 | 美商陶氏有機矽公司 | Curable silicone composition and cured product thereof |
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| US4645781A (en) * | 1983-03-29 | 1987-02-24 | Union Carbide Corporation | Blends of cyclic vinyl ether containing compounds and expoxides |
| US5525645A (en) * | 1988-02-19 | 1996-06-11 | Asahi Denka Kogyo K.K. | Resin composition for optical molding |
| US20020013380A1 (en) * | 1999-01-15 | 2002-01-31 | Cecil C. Chappelow | Photopolymerizable vinyl ether based monomeric formulations and polymerizable compositions which may include certain novel spiroorthocarbonates |
| US20050064333A1 (en) * | 2002-05-16 | 2005-03-24 | Rensselaer Polytechnic Institute | Thianthrenium salt cationic photoinitiators |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4645781A (en) * | 1983-03-29 | 1987-02-24 | Union Carbide Corporation | Blends of cyclic vinyl ether containing compounds and expoxides |
| US5525645A (en) * | 1988-02-19 | 1996-06-11 | Asahi Denka Kogyo K.K. | Resin composition for optical molding |
| US20020013380A1 (en) * | 1999-01-15 | 2002-01-31 | Cecil C. Chappelow | Photopolymerizable vinyl ether based monomeric formulations and polymerizable compositions which may include certain novel spiroorthocarbonates |
| US20050064333A1 (en) * | 2002-05-16 | 2005-03-24 | Rensselaer Polytechnic Institute | Thianthrenium salt cationic photoinitiators |
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