CN106125502A - A kind of nano-imprinting apparatus is with photoresist - Google Patents
A kind of nano-imprinting apparatus is with photoresist Download PDFInfo
- Publication number
- CN106125502A CN106125502A CN201610429964.7A CN201610429964A CN106125502A CN 106125502 A CN106125502 A CN 106125502A CN 201610429964 A CN201610429964 A CN 201610429964A CN 106125502 A CN106125502 A CN 106125502A
- Authority
- CN
- China
- Prior art keywords
- parts
- nano
- photoresist
- imprinting apparatus
- agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Epoxy Resins (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
The invention discloses a kind of nano-imprinting apparatus with photoresist, a kind of nano-imprinting apparatus is counted the most by weight, consisting of: organic molecule solvent 60 80 parts, epoxy resin 30 50 parts, cross-linking agent 15 parts, stabilizer 13 parts, nano silicon 10 15 parts, nano aluminium oxide 10 15 parts, light trigger 15 parts, photo polymerization monomer 12 parts, auxiliary agent 13 parts.It is stable that the present invention has surface property, improves stripping result, improves impressing precision, reduces the feature of impressing defect.
Description
Technical field
The present invention relates to a kind of nano-imprinting apparatus with photoresist.
Background technology
Nano impression is affected by the Next Generation Lithography of extensive concern, in high precision, high-resolution, cheap feature make it
Being likely to become main flow photoetching technique of future generation, photoresist is nano impression critical material, its performance will affect coining pattern answer
Precision processed, graphic defects rate and figure be Etch selectivity when ground shifts, and fluoropolymer can be preferable as Other substrate materials
Reduction photoresist surface tension, but photoresist Etch selectivity can be caused to decline, also can reduce the photoresist adhesion to ground
Power.Meanwhile, for meeting film forming and the adhesion to ground, use organosilicon or the Other substrate materials that fluoropolymer is main body can only be by
Surface can be reduced to a bigger numerical value, is difficult to obtain satisfied stripping result to the impressing of large area high resolution structures.
Summary of the invention
The object of the invention: the invention aims to solve deficiency of the prior art, it is provided that a kind of surface property is steady
Fixed, improve stripping result, improve impressing precision, reduce the nano-imprinting apparatus of impressing defect with photoresist.
The purpose of the present invention is achieved through the following technical solutions a kind of nano-imprinting apparatus with photoresist, and described one is received
Rice Embosser is counted the most by weight, consisting of:
Further, the one during cross-linking agent is difunctional, polyfunctional monomer.
Further, auxiliary agent is felt well selected from stabilizer, levelling agent, defoamer, anticrater agent, adhesion promoter and surface
At least one in lubrication prescription.
Further, at least one during organic molecule solvent is acrylate, vinyl ethers.
The present invention has the advantage that compared with existing photoresist organic molecule solvent, as bulk composition, reduces
Low viscosity, it is provided that preferably mobility, it is possible to regulation thickness, promote film forming, epoxy resin determine photoresist polymerization process and
Filming performance, improves the raising of photoresist work efficiency in process of production, and the photoresist after cross-linking agent makes solidification has enough
Mechanical strength, reduce photoresist deformation in moulding process, thus ensure the quality of impressing, light trigger causes polymerization anti-
Should, absorbing ultraviolet light, auxiliary agent can regulate levelling and surface property, makes surface property stable, improves stripping result, improves impressing
Precision, nano silicon improves the anti-etching ability of photoresist, reduces impressing defect, and nano aluminium oxide thermostability is strong, molding
Property good, more accurate when making impressing, quality is unaffected, improves the template life-span, improves stripping result.
Detailed description of the invention
In order to deepen the understanding of the present invention, below we the invention will be further described, this embodiment be only used for solve
Release the present invention, be not intended that limiting the scope of the present invention.
Implement raw material: organic molecule solvent, epoxy resin, cross-linking agent, stabilizer, nano silicon, nano oxidized
Aluminum, light trigger, photo polymerization monomer, auxiliary agent.
Implementation process: above-mentioned formula material is all commercially available, according to the weight of constituent, weighs corresponding part
Number, through corresponding working procedure processing plastic.
Embodiment 1
Organic molecule solvent 60 parts, epoxy resin 50 parts, cross-linking agent 1 part, stabilizer 1 part, nano silicon 12 parts,
Above-mentioned several materials are sequentially added in beaker by nano aluminium oxide 12 parts, light trigger 1 part, photo polymerization monomer 1 part, auxiliary agent 1 part
Heat and stir, at a temperature of 50 DEG C, stablizing half an hour, filtering through 0.1 μm bore filter device and i.e. obtain surface conditioning agent, above behaviour
Make all to carry out under the conditions of lucifuge, obtain nano-imprinting apparatus with photoresist.
Embodiment 2
Organic molecule solvent 70 parts, epoxy resin 30 parts, cross-linking agent 3 parts, stabilizer 2 parts, nano silicon 10 parts,
Above-mentioned several materials are sequentially added in beaker by nano aluminium oxide 10 parts, light trigger 3 parts, photo polymerization monomer 2 parts, auxiliary agent 2 parts
Heat and stir, at a temperature of 50 DEG C, stablizing half an hour, filtering through 0.1 μm bore filter device and i.e. obtain surface conditioning agent, above behaviour
Make all to carry out under the conditions of lucifuge, obtain nano-imprinting apparatus with photoresist.
Embodiment 3
Organic molecule solvent 80 parts, epoxy resin 40 parts, cross-linking agent 5 parts, stabilizer 3 parts, nano silicon 15 parts,
Above-mentioned several materials are sequentially added in beaker by nano aluminium oxide 15 parts, light trigger 5 parts, photo polymerization monomer 1 part, auxiliary agent 3 parts
Heat and stir, at a temperature of 50 DEG C, stablizing half an hour, filtering through 0.1 μm bore filter device and i.e. obtain surface conditioning agent, above behaviour
Make all to carry out under the conditions of lucifuge, obtain nano-imprinting apparatus with photoresist.
Above-mentioned detailed description of the invention, is only technology design and the architectural feature of the explanation present invention, it is therefore intended that allow and be familiar with this
The stakeholder of item technology can implement according to this, but above content is not limiting as protection scope of the present invention, every according to this
Any equivalence that bright spirit is made changes or modifies, and all should fall under the scope of the present invention.
Claims (4)
1. a nano-imprinting apparatus is with photoresist, it is characterised in that: described a kind of nano-imprinting apparatus is the most by weight
Number meter, consisting of:
。
A kind of nano-imprinting apparatus the most according to claim 1 is with photoresist, it is characterised in that: described cross-linking agent is double officials
One in energy group, polyfunctional monomer.
A kind of nano-imprinting apparatus the most according to claim 1 is with photoresist, it is characterised in that: described auxiliary agent is selected from stable
At least one in agent, levelling agent, defoamer, anticrater agent, adhesion promoter and surface slipping agent.
A kind of nano-imprinting apparatus the most according to claim 1 is with photoresist, it is characterised in that: described organic molecule is molten
Agent is at least one in acrylate, vinyl ethers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610429964.7A CN106125502A (en) | 2016-06-17 | 2016-06-17 | A kind of nano-imprinting apparatus is with photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610429964.7A CN106125502A (en) | 2016-06-17 | 2016-06-17 | A kind of nano-imprinting apparatus is with photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106125502A true CN106125502A (en) | 2016-11-16 |
Family
ID=57470697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610429964.7A Pending CN106125502A (en) | 2016-06-17 | 2016-06-17 | A kind of nano-imprinting apparatus is with photoresist |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106125502A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110305239A (en) * | 2019-05-17 | 2019-10-08 | 华中科技大学 | A kind of photoresist of high strength |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1719338A (en) * | 2005-08-01 | 2006-01-11 | 西安交通大学 | Ultraviolet ray solidification cation type etching glue for nano embessing |
| CN103676471A (en) * | 2012-09-13 | 2014-03-26 | 日立化成株式会社 | Method for manufacturing patterned resin layer and resin composition applied thereto |
-
2016
- 2016-06-17 CN CN201610429964.7A patent/CN106125502A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1719338A (en) * | 2005-08-01 | 2006-01-11 | 西安交通大学 | Ultraviolet ray solidification cation type etching glue for nano embessing |
| CN103676471A (en) * | 2012-09-13 | 2014-03-26 | 日立化成株式会社 | Method for manufacturing patterned resin layer and resin composition applied thereto |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110305239A (en) * | 2019-05-17 | 2019-10-08 | 华中科技大学 | A kind of photoresist of high strength |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161116 |