CN1713075B - 光刻装置和器件制造方法 - Google Patents

光刻装置和器件制造方法 Download PDF

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Publication number
CN1713075B
CN1713075B CN200510079476.XA CN200510079476A CN1713075B CN 1713075 B CN1713075 B CN 1713075B CN 200510079476 A CN200510079476 A CN 200510079476A CN 1713075 B CN1713075 B CN 1713075B
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CN
China
Prior art keywords
gas
substrate
lithographic equipment
base station
patterning device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200510079476.XA
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English (en)
Chinese (zh)
Other versions
CN1713075A (zh
Inventor
J·洛夫
J·C·H·穆肯斯
J·J·S·M·梅坦斯
A·J·范德米特
R·范德哈姆
N·拉勒曼特
M·贝克斯
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ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Publication of CN1713075A publication Critical patent/CN1713075A/zh
Application granted granted Critical
Publication of CN1713075B publication Critical patent/CN1713075B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933Purge, e.g. exchanging fluid or gas to remove pollutants
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN200510079476.XA 2004-06-23 2005-06-23 光刻装置和器件制造方法 Expired - Fee Related CN1713075B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/873,650 US7057702B2 (en) 2004-06-23 2004-06-23 Lithographic apparatus and device manufacturing method
US10/873650 2004-06-23

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2010102497928A Division CN101916050B (zh) 2004-06-23 2005-06-23 光刻装置和器件制造方法

Publications (2)

Publication Number Publication Date
CN1713075A CN1713075A (zh) 2005-12-28
CN1713075B true CN1713075B (zh) 2010-08-04

Family

ID=34938361

Family Applications (2)

Application Number Title Priority Date Filing Date
CN200510079476.XA Expired - Fee Related CN1713075B (zh) 2004-06-23 2005-06-23 光刻装置和器件制造方法
CN2010102497928A Expired - Fee Related CN101916050B (zh) 2004-06-23 2005-06-23 光刻装置和器件制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2010102497928A Expired - Fee Related CN101916050B (zh) 2004-06-23 2005-06-23 光刻装置和器件制造方法

Country Status (7)

Country Link
US (1) US7057702B2 (https=)
EP (1) EP1610183A3 (https=)
JP (2) JP2006013502A (https=)
KR (1) KR100695553B1 (https=)
CN (2) CN1713075B (https=)
SG (2) SG138618A1 (https=)
TW (1) TWI277837B (https=)

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KR101431938B1 (ko) 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
SG141426A1 (en) 2003-04-10 2008-04-28 Nikon Corp Environmental system including vacuum scavange for an immersion lithography apparatus
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
TWI442694B (zh) * 2003-05-30 2014-06-21 Asml荷蘭公司 微影裝置及元件製造方法
KR101476087B1 (ko) 2003-06-19 2014-12-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
KR101440743B1 (ko) * 2004-01-05 2014-09-17 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101250155B1 (ko) 2004-03-25 2013-04-05 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7522261B2 (en) * 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119876B2 (en) * 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) * 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070132976A1 (en) * 2005-03-31 2007-06-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7834974B2 (en) * 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7170583B2 (en) * 2005-06-29 2007-01-30 Asml Netherlands B.V. Lithographic apparatus immersion damage control
US7432513B2 (en) * 2005-10-21 2008-10-07 Asml Netherlands B.V. Gas shower, lithographic apparatus and use of a gas shower
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7728952B2 (en) * 2007-01-25 2010-06-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for closing plate take-over in immersion lithography
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) * 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
NL1035908A1 (nl) 2007-09-25 2009-03-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP2009094145A (ja) * 2007-10-04 2009-04-30 Canon Inc 露光装置、露光方法およびデバイス製造方法
NL2005586A (en) * 2009-12-02 2011-06-06 Asml Netherlands Bv Lithographic apparatus and sealing device for a lithographic apparatus.
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
US9341942B2 (en) * 2010-08-24 2016-05-17 Nikon Research Corporation Of America Vacuum chamber assembly for supporting a workpiece
NL2008199A (en) * 2011-02-28 2012-08-29 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.
NL2008695A (en) * 2011-05-25 2012-11-27 Asml Netherlands Bv Lithographic apparatus comprising substrate table.
JP5809364B2 (ja) * 2011-11-22 2015-11-10 エーエスエムエル ネザーランズ ビー.ブイ. 露光装置
NL2010916A (en) 2012-07-06 2014-01-07 Asml Netherlands Bv A lithographic apparatus.
US9568828B2 (en) * 2012-10-12 2017-02-14 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
NL2014893A (en) * 2014-07-04 2016-03-31 Asml Netherlands Bv Lithographic apparatus and a method of manufacturing a device using a lithographic apparatus.
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield
CN107783283B (zh) * 2016-08-30 2020-01-24 上海微电子装备(集团)股份有限公司 镜片防污染装置及方法
CN109283797B (zh) * 2017-07-21 2021-04-30 上海微电子装备(集团)股份有限公司 物镜保护装置、物镜系统以及光刻设备
EP3620858B1 (en) * 2018-09-10 2023-11-01 Canon Kabushiki Kaisha Exposure apparatus and method of manufacturing article
WO2020216643A1 (en) * 2019-04-26 2020-10-29 Asml Holding N.V. Lithographic apparatus and illumination uniformity correction system
WO2021032356A1 (en) * 2019-08-20 2021-02-25 Asml Netherlands B.V. Substrate holder, lithographic apparatus and method
WO2021133436A1 (en) * 2019-12-26 2021-07-01 Zeng An Andrew Tool architecture for wafer geometry measurement in semiconductor industry
EP3919978A1 (en) * 2020-06-05 2021-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and a method of forming a particle shield
US11740564B2 (en) * 2020-06-18 2023-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus and method using the same
CN113262956B (zh) * 2021-07-21 2021-10-15 四川洪芯微科技有限公司 一种半导体晶圆表面处理装置
DE102023204744A1 (de) * 2023-05-22 2024-05-16 Carl Zeiss Smt Gmbh Optisches system und projektionsbelichtungsanlage

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US6559922B2 (en) * 2000-05-03 2003-05-06 Eric C. Hansell Method and apparatus for a non-contact scavenging seal
CN1501172A (zh) * 2002-11-12 2004-06-02 Asml 光刻装置和器件制造方法

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US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
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EP1429188B1 (en) * 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
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US6559922B2 (en) * 2000-05-03 2003-05-06 Eric C. Hansell Method and apparatus for a non-contact scavenging seal
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CN1501172A (zh) * 2002-11-12 2004-06-02 Asml 光刻装置和器件制造方法

Also Published As

Publication number Publication date
US7057702B2 (en) 2006-06-06
JP5064979B2 (ja) 2012-10-31
JP2006013502A (ja) 2006-01-12
TWI277837B (en) 2007-04-01
JP2008072139A (ja) 2008-03-27
CN101916050A (zh) 2010-12-15
US20050286032A1 (en) 2005-12-29
KR20060048484A (ko) 2006-05-18
EP1610183A2 (en) 2005-12-28
EP1610183A3 (en) 2007-10-31
TW200612207A (en) 2006-04-16
KR100695553B1 (ko) 2007-03-14
SG138618A1 (en) 2008-01-28
CN1713075A (zh) 2005-12-28
CN101916050B (zh) 2013-11-20
SG118391A1 (en) 2006-01-27

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SE01 Entry into force of request for substantive examination
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Granted publication date: 20100804

Termination date: 20170623