CN1710491A - Odd phase-difference in-situ detection method of photoetching machine porjection objective lens - Google Patents
Odd phase-difference in-situ detection method of photoetching machine porjection objective lens Download PDFInfo
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- CN1710491A CN1710491A CN 200510026450 CN200510026450A CN1710491A CN 1710491 A CN1710491 A CN 1710491A CN 200510026450 CN200510026450 CN 200510026450 CN 200510026450 A CN200510026450 A CN 200510026450A CN 1710491 A CN1710491 A CN 1710491A
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Abstract
Based on offsets of imaging positions measured under different quantities of defocus, the method realizes accurate measurement for wavefront tilt, coma aberration and triple wave difference at same time. Detecting odd aberration based on changing quantities of defocus, the invention avoids works for optimizing multiple different numerical apertures of projection objective in photo etching device as well as parts of coherent factors. Advantages are: simple test procedure and raised detection precision caused by increased variable range of sensitivity coefficient.
Description
Technical field
The present invention relates to litho machine, particularly a kind of odd phase-difference in-situ detection method of photoetching machine porjection objective lens, the particularly in-situ detection method of wavetilt in the strange aberration of projection lens of lithography machine, coma, three ripple differences.
Background technology
In the integrated circuit manufacturing equipment, the projection mask aligner that is used for optical lithography is known.In projection mask aligner, the mask of integrated circuit pattern is carved with in the exposing light beam illumination, and mask is imaged on the substrate through projection objective, and the photoresist that is coated on the substrate is exposed.
Along with the raising of SIC (semiconductor integrated circuit) integrated level, more and more higher to the requirement of photoetching resolution and alignment precision.The aberration of projection objective is a key factor that influences photoetching resolution and alignment precision.The aberration of projection objective uses wave aberration to represent usually, and wave aberration can be decomposed into the form of zernike polynomial.The wave aberration of decomposing according to zernike polynomial can be divided into idol difference and strange aberration two classes.Strange aberration comprises wavetilt, coma and three ripple differences etc.Along with constantly reducing of lithographic feature size, the especially use of photoetching resolution enhancement techniques such as off-axis illumination, the strange aberration of projection objective becomes more and more outstanding to the influence of photoetching resolution and alignment precision.Therefore the strange aberration in situ detection of high-precision projection lens of lithography machine technology is indispensable.
DAMIS (Displacement At Multiple Illumination Settings) is a kind of aberration detection technique based on the numerical aperture that projection objective is set, partial coherence factor, coma in can the strange aberration of in situ detection projection lens of lithography machine is (referring to technology [1] formerly, Joost Sytsma, Hans vander Laan, Marco Moers, Rob Willekers. " Improved Imaging Metrology Neededfor Advanced Lithography " .Semiconductor international 2001,4).Formerly in the technology [1], numerical aperture, the partial coherence factor of different projection objectives is set at first, the mask exposure that will have a plurality of test badges is scribbling on the substrate of photoresist.The structure of arbitrary test badge as shown in Figure 1 on the mask.After substrate carried out back baking and develop, form the figure of mask test badge on the photoresist on the substrate.By the optical alignment system in the litho machine these figures are aimed at, (X Y), and obtains imaging offset (Δ X, Δ Y) after ideal position is compared to obtain the image space of mask test badge.Utilize lithography simulation software to determine different numerical apertures, the sensitivity coefficient under the partial coherence factor then.According to obtaining different imaging offset and sensitivity coefficient under different numerical apertures, the partial coherence factor, utilize specific mathematical model and algorithm to obtain characterizing the zernike coefficient Z of projecting objective coma aberration
7, Z
8, Z
14, Z
15DAMIS utilizes intrinsic hardware of litho machine and Function detection aberration, need not to increase additional hardware, has realized the in situ detection of photo-etching machine projecting objective coma aberration, and detection method is simple, direct.Regrettably the method will be optimized work to numerical aperture, the partial coherence factor of projection objective before detecting, and needs to repeat to be provided with multiple different numerical aperture, partial coherence factor, testing process complexity in the testing process; Simultaneously, along with the raising of photoetching resolution, DAMIS can't satisfy the needs of the strange aberration of projection objective on accuracy of detection and detection speed gradually.
Summary of the invention
At technology [1] above shortcomings formerly, the invention provides a kind of high-precision odd phase-difference in-situ detection method of photoetching machine porjection objective lens.
High accuracy in-situ detected when this method had realized wavetilt in the strange aberration of projection lens of lithography machine, coma, three ripple differences based on the change of imaging plane defocusing amount.Testing process complexity in the technology [1] formerly, accuracy of detection is low and detection speed is slow problem have been solved.
Technical solution of the present invention is as follows:
A kind of odd phase-difference in-situ detection method of photoetching machine porjection objective lens, this method may further comprise the steps:
1. open the litho machine light source, adjust photo-etching machine work-piece platform, make the substrate of work stage carrying be positioned at position with certain defocusing amount;
2. the light beam that described light source sends is radiated on the mask after adjusting through the photo-etching machine illumination system; Test badge on this mask is imaged on the described substrate through projection objective, and the acquisition of exposure back has the latent image of the test badge of this defocusing amount;
3. change the defocusing amount Δ f of substrate, repeat above-mentioned steps 2., acquisition has the latent image of the test badge of a series of different defocusing amounts on substrate;
4. after baking is developed behind the substrate after will exposing, utilize the optical alignment system of litho machine to measure the image space of mask test badge figure on the substrate, compare with the theoretical image space of mask test badge figure, obtain side-play amount (the Δ X of described substrate image space of mask test badge under the condition of a series of defocusing amounts
i, Δ Y
i);
5. according to imaging offset (the Δ X of described out of focus position
i, Δ Y
i) determine the sensitivity coefficient [S] of strange aberration;
6. utilize described imaging offset (Δ X
i, Δ Y
i) and sensitivity coefficient [S], pass through Z
k=[S]
-1Δ X
iCalculate the strange aberration Z of projection lens of lithography machine
k
The described process of determining the sensitivity coefficient [S] of strange aberration may further comprise the steps:
1. a zernike coefficient Z in the selected zernike coefficient
kNumerical value x with mutually should zernike coefficient according to selected a series of out of focus position, utilizes lithography simulation software to carry out emulation and progressively obtains this zernike coefficient Z
kFollowing a series of image space emulation side-play amount (Δ x
i, Δ y
i);
2. utilize image space emulation side-play amount (Δ x
i, Δ y
i), according to S
i=Δ x
i/ x calculates the sensitivity coefficient S of unusual aberration
i
The a series of defocusing amount of the substrate of described work stage carrying is that with several defocusing amounts that certain out of focus stepping amount is the interval, its number should be greater than 4 near the out of focus scope of selecting the focal plane.
Described mask test badge comprises one group of vertical intensive lines with a group of the intensive lines of level, and the cycle of mask test badge is identical with the alignment mark cycle that described optical alignment system uses.
The quantity of described mask test badge has more than 5 or 5, and evenly distributes in the exposure visual field.
The present invention has the following advantages:
1, compare with technology [1] formerly, imaging offset increases with respect to the sensitivity coefficient variation range of described strange aberration under the different defocusing amounts that the present invention adopts, and has improved the accuracy of detection of described strange aberration.
2, compare with technology [1] formerly, the test badge that the present invention adopts uses one group of level and vertical intensive lines to replace formerly in the technology [1] two groups of levels and vertical intensive lines, improve the speed of utilizing alignment system to detect the image space of mask test badge, thereby improved the detection speed of strange aberration.
3, compare with technology [1] formerly, the strange aberration in-situ detection method of projection objective that the present invention proposes comes restriction that the strange aberration of in situ detection projection objective, the accuracy of detection of strange aberration be not subjected to the numerical aperture of projection objective, partial coherence factor setting and influences based on the out of focus of imaging plane.
4, compare with technology [1] formerly, the present invention has avoided before detecting multiple numerical aperture, partial coherence factor being optimized work, need not during detection to repeat to be provided with multiple different numerical aperture, partial coherence factor, and testing process is simple.
Description of drawings
Fig. 1 is the structural representation of test badge described in the technology [1] formerly;
Fig. 2 projection mask aligner structural representation;
The testing process figure of the strange aberration detection technique of projection objective that Fig. 3 the present invention proposes;
The structural representation of arbitrary test badge on Fig. 4 mask of the present invention;
The sensitivity coefficient change curve that obtains under the different defocusing amounts of Fig. 5 the present invention;
Embodiment
The invention will be further described below by embodiment.
The present invention is applied in as shown in Figure 2 the projection mask aligner, this litho machine mainly comprises: the light source 1 that produces exposing light beam, be used to adjust the illuminator 2 that light source 1 sends the light beam light distribution, with the projection objective 5 of pattern imaging on the mask 3 on substrate 7, carrying mask 3 also can pinpoint mask platform 4, work stage 8 is used for bearing substrate 7 and can accurately adjusts the defocusing amount of described substrate 7, is used to measure on the substrate 7 optical alignment system 6 of figure on the photoresist.
The testing process of the strange aberration in-situ detection method of projection objective of the present invention after preliminary work 10, enters imaging offset acquisition process 100, sensitivity coefficient calibration process 200 and data handling procedure 300 as shown in Figure 3.The concrete operations step of imaging offset acquisition process 100, sensitivity coefficient deterministic process 200 and data handling procedure 300 is as follows:
Imaging offset acquisition process 100:
(11) determining of test technology condition: refer to conditions such as photoresist type, photoresist thickness, back baking temperature, back baking time, development time, identical with general photoetching situation;
(12) test exposure: adjust work stage 8, make the substrate 7 of work stage 8 carryings be positioned at defocusing amount Δ f
1Down; The light beam that light source 1 sends shines in mask 3 through illuminator 2, and the test badge on the mask 3 is imaged on the substrate 7 that scribbles photoresist through projection objective 5; Selecting out of focus stepping amount is Δ f, is respectively Δ f in defocusing amount
1+ Δ f, Δ f
1+ 2 Δ f, Δ f
1+ 3 Δ f, Δ f
1Under+4 Δ f, the mask test badge is exposed on the substrate that scribbles photoresist 7 that is in a series of out of focus position;
(13) PROCESS FOR TREATMENT: the substrate 7 that is exposed in the above-mentioned steps (12) is carried out back baking or back baking back development;
(14) optical alignment is measured: utilize optical alignment system 6 respectively the figure of the mask test badge on the photoresist on the substrate 7 in the above-mentioned steps (13) to be aimed at, obtain the image space of mask test badge under different defocusing amounts, be designated as (X, Y);
(15) imaging offset is calculated: according to the theoretical position of the imaging in the exposure visual field of arbitrary test badge on the mask 3 nominal position (X just
m, Y
m), and utilize the image space information that obtains in it and the above-mentioned steps (14) to calculate the imaging offset (Δ X, Δ Y) of arbitrary test badge on the mask 3 by (1) formula,
Obtain corresponding to defocusing amount Δ f by (1) formula
1, Δ f
1+ Δ f, Δ f
1+ 2 Δ f, Δ f
1+ 3 Δ f, Δ f
1The imaging offset of+4 Δ f (Δ X
Δ f1, Δ Y
Δ f1), (Δ X
Δ f1+ Δ f, Δ Y
Δ f1+ Δ f), (Δ X Δ f
1+2 Δ f, Δ Y
Δ f1+2 Δ f), (Δ X
Δ f1+3 Δ f, Δ Y
Δ f1+3 Δ f), (Δ X
Δ f1+4 Δ f, Δ Y
Δ f1+4 Δ f).
Sensitivity coefficient deterministic process 200:
(21) select a zernike coefficient Z
kWith the numerical value x of this zernike coefficient, utilize lithography simulation software to carry out emulation, obtain respective imaging position emulation side-play amount;
(22) lithography simulation software emulation: the process conditions of utilizing above-mentioned steps (11) to determine, utilize lithography simulation software emulation actual exposure, back baking, developing process, obtain the image space emulation offset x of mask test badge under the different defocusing amounts
k(Δ f
1) or Δ y
k(Δ f
1), Δ x
Δ f1+ Δ fOr Δ y
Δ f1+ Δ f, Δ x
Δ f1+2 Δ fOr Δ y
Δ f1+2 Δ f, Δ x
Δ f1+3 Δ fOr Δ y
Δ f1+3 Δ f, Δ x
Δ f1+4 Δ fOr Δ y
Δ f1+4 Δ f
(23) sensitivity coefficient is determined: under certain defocusing amount, image space emulation side-play amount is big or small linear with the zernike coefficient that characterizes strange aberration.Utilize the image space emulation offset x of the mask test badge that above-mentioned steps (22) obtains
k(Δ f
1) or Δ y
k(Δ f
1), imaging offset is at defocusing amount Δ f
1Following sensitivity coefficient S with respect to zernike coefficient Zk
Δ f1, ZkCalculate by (2) formula,
By (2) Shi Kede corresponding to defocusing amount Δ f
1+ Δ f, Δ f
1+ 2 Δ f, Δ f
1+ 3 Δ f, Δ f
1The sensitivity coefficient of+4 Δ f is S
Δ f1+ Δ f, Zk, S
Δ f1+2 Δ f, Zk, S
Δ f1+3 Δ f, Zk, S
Δ f1+4 Δ f, Zk
Data handling procedure 300:
(31) strange aberration calculates: by obtaining corresponding to defocusing amount Δ f in the above-mentioned steps (15)
1, Δ f
1+ Δ f, Δ f
1+ 2 Δ f, Δ f
1+ 3 Δ f, Δ f
1Imaging offset (the Δ X of the arbitrary test badge of mask of+4 Δ f
Δ f1, Δ Y
Δ f1), (Δ X
Δ f1+ Δ f, Δ Y
Δ f1+ Δ f), (Δ X
Δ f1+2 Δ f, Δ Y
Δ f1+2 Δ f), (Δ X
Δ f1+3 Δ f, Δ Y
Δ f1+3 Δ f), (Δ X
Δ f1+4 Δ f, Δ Y
Δ f1+4 Δ f).Obtain under above-mentioned defocusing amount imaging offset with respect to Z by above-mentioned steps (23)
kSensitivity coefficient be respectively S
Δ f1, Zk, S
Δ f1+ Δ f, Zk, S
Δ f1+2 Δ f, Zk, S
Δ f1+3 Δ f, Zk, S
Δ f1+4 Δ f, Zk, wherein k can be taken as 2,3,7,8,10,11,14,15 respectively.The strange aberration of projection objective utilizes least square method to calculate by (3) formula,
(3)；
Light source 1 is light sources such as ultraviolets such as mercury lamp or excimer laser, deep ultraviolet in the above-mentioned steps (12).
The quantity of test badge should guarantee to have at least 5 mark in the exposure visual field with distribution on the described mask 3, and is marked at evenly distribution in the visual field.Wherein arbitrary mark structure should comprise one group of vertical intensive lines two parts with a group of the intensive lines of level, as shown in Figure 4.
The described test badge cycle is identical with the cycle of the employed alignment mark of optical alignment system in the litho machine.
Described a series of out of focus position refers to that with several out of focus positions that certain out of focus stepping amount is the interval, its number should be greater than 4 in selected out of focus scope.
The semiconductor material wafer that described substrate 7 fingers have certain crystalline network is as wafers such as silicon chips.
Lithography simulation software refers to the accurately software of emulation photoetching process and effect in the above-mentioned steps (21), as PROLITH, and lithography simulation softwares such as SOLID-C.
A zernike coefficient in the described zernike coefficient refers to characterize a zernike coefficient in the zernike coefficient of wavetilt in the strange aberration, coma, three ripple differences, i.e. any one zernike coefficient in the table 1.
Table 1 zernike coefficient is pairing strange aberration with it
| ??Z 2 | X is to wavetilt |
| ??Z 3 | Y is to wavetilt |
| ??Z 7 | X is to three rank comas |
| ??Z 8 | Y is to three rank comas |
| ??Z 10 | X is poor to three ripples |
| ??Z 11 | Y is poor to three ripples |
| ??Z 14 | X is to five rank comas |
| ??Z 15 | Y is to five rank comas |
Fig. 2 is the structural representation of the used projection mask aligner of present embodiment, and wherein, light source 1 adopts the deep ultraviolet excimer laser.The defocusing amount scope of work stage 9 is 0.2um～1.6um, and out of focus stepping amount is 0.2um.Substrate 7 uses silicon chip.Process conditions are: Sumitomo PAR710 type photoresist, glue thick for 1000nm, back baking temperature be that 95 °, back baking time are that 60s, development time are 60s; The test badge cycle is 8um.Zernike coefficient is Z
7, numerical value is 9.65nm.Use the PROLITH lithography simulation software of KLA-Tencor company to carry out emulation.
The laser that light source 1 sends is through being radiated on the mask 3 after the illuminator 2.Under different defocusing amounts, test badge is imaged on the substrate 7 that scribbles photoresist through projection objective 5 on the mask 3.After substrate 7 carried out back baking, develops, utilize on 6 pairs of substrates 7 of alignment system on the photoresist figure of mask test badge to aim at, obtain the image space of mask test badge under the different defocusing amounts.Through the lithography simulation software emulation stage 22, obtain imaging offset under the different defocusing amounts with respect to the zernike coefficient Z that characterizes coma
7Sensitivity coefficient, as shown in Figure 5.
As shown in Figure 4, the test badge that the present invention adopts is half of test badge among the DAMIS, thereby utilizes the time of the image space of alignment system certification mark to shorten half, and the detection speed of described strange aberration improves 1 times.Among Fig. 5, the variation range of sensitivity coefficient is 2.1, and formerly the variation range of technology [1] medium sensitivity coefficient is 1.6.As seen the variation range of the sensitivity coefficient among the present invention is compared with technology [1] formerly and has been increased 0.5, has therefore improved the accuracy of detection of the strange aberration of projection objective.Under the certain situation of imaging offset accuracy of detection, the accuracy of detection of the strange aberration in-situ detection method of projection objective of the present invention is compared with technology [1] formerly and has been improved 31.3%.
Claims (5)
1, a kind of odd phase-difference in-situ detection method of photoetching machine porjection objective lens is characterized in that this method may further comprise the steps:
1. open litho machine light source (1), adjust photo-etching machine work-piece platform (8), make the substrate (7) of work stage carrying be positioned at position with certain defocusing amount;
2. the light beam that described light source (1) sends is radiated on the mask (3) after adjusting through photo-etching machine illumination system (2); Test badge on this mask is imaged on the described substrate (7) through projection objective (5), and the acquisition of exposure back has the latent image of the test badge of this defocusing amount;
3. change the defocusing amount Δ f of substrate (7), repeat above-mentioned steps 2., go up the latent image that acquisition has the test badge of a series of different defocusing amounts at substrate (7);
4. after substrate (7) the back baking after will exposing is developed, utilize the optical alignment system (6) of litho machine to measure the image space that substrate (7) is gone up mask test badge figure, compare with the theoretical image space of mask test badge figure, obtain side-play amount (the Δ X of described substrate (7) image space of mask test badge under the condition of a series of defocusing amounts
i, Δ Y
i);
5. according to imaging offset (the Δ X of described out of focus position
i, Δ Y
i) determine the sensitivity coefficient [S] of strange aberration;
6. utilize described imaging offset (Δ X
i, Δ Y
i) and sensitivity coefficient [S], pass through Z
k=[S]
-1Δ X
iCalculate the strange aberration Z of projection lens of lithography machine
k
2, according to the described odd phase-difference in-situ detection method of photoetching machine porjection objective lens of claim 1, it is characterized in that the described process of determining the sensitivity coefficient [S] of strange aberration, may further comprise the steps:
1. a zernike coefficient Z in the selected zernike coefficient
kNumerical value x with mutually should zernike coefficient according to selected a series of out of focus position, utilizes lithography simulation software to carry out emulation and progressively obtains this zernike coefficient Z
kFollowing a series of image space emulation side-play amount (Δ x
i, Δ y
i);
2. utilize image space emulation side-play amount (Δ x
i, Δ y
i), according to
Calculate the sensitivity coefficient S of unusual aberration
i
3, according to the strange aberration detection method of the described projection objective of claim 1, the a series of defocusing amount that it is characterized in that the substrate (7) of described work stage (8) carrying is near the out of focus scope of selecting the focal plane, with several defocusing amounts that certain out of focus stepping amount is the interval, its number should be greater than 4.
4, according to the strange aberration detection method of the described projection objective of claim 1, it is characterized in that described mask test badge comprises one group of vertical intensive lines with a group of the intensive lines of level, the cycle of mask test badge is identical with the alignment mark cycle that described optical alignment system uses.
5,, it is characterized in that the quantity of described mask test badge has more than 5 or 5, and in the exposure visual field, evenly distribute according to the strange aberration detection method of the described projection objective of claim 1.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2007112625A1 (en) * | 2006-04-04 | 2007-10-11 | Shanghai Micro Electronics Equipment Co., Ltd. | Method for in-situ aberration measurement of optical imaging system in lithographic tools |
| CN101799640A (en) * | 2010-03-10 | 2010-08-11 | 中国科学院光电技术研究所 | Device and method for determining optimal focal plane position of lithography machine |
| CN102200697A (en) * | 2011-06-03 | 2011-09-28 | 中国科学院上海光学精密机械研究所 | System and method for detecting wave aberration of photoetching projection objective |
| CN102540751A (en) * | 2010-12-28 | 2012-07-04 | 上海微电子装备有限公司 | Method for detecting distortion and curvature of field of projection objective |
| CN104303090A (en) * | 2012-05-17 | 2015-01-21 | 西铁城控股株式会社 | Aberration correction device and laser microscope |
| US9423701B2 (en) | 2011-04-05 | 2016-08-23 | Asml Netherlands B.V. | Lithographic method and assembly |
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| WO2002052620A1 (en) * | 2000-12-22 | 2002-07-04 | Nikon Corporation | Wavefront aberration measuring instrument, wavefront aberration measuring method, exposure apparatus, and method for manufacturing microdevice |
| US20030051224A1 (en) * | 2001-09-07 | 2003-03-13 | I-Hsiung Huang | Aggressive optical proximity correction method |
| JP3626448B2 (en) * | 2001-11-28 | 2005-03-09 | 株式会社東芝 | Exposure method |
| EP1336899A1 (en) * | 2002-02-15 | 2003-08-20 | ASML Netherlands B.V. | Lithographic apparatus, alignment method and device manufacturing method |
| JP2004012598A (en) * | 2002-06-04 | 2004-01-15 | Adtec Engineeng Co Ltd | Projection aligner |
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| WO2007112625A1 (en) * | 2006-04-04 | 2007-10-11 | Shanghai Micro Electronics Equipment Co., Ltd. | Method for in-situ aberration measurement of optical imaging system in lithographic tools |
| US8035801B2 (en) | 2006-04-04 | 2011-10-11 | Shanghai Micro Electronics Equipment Co., Ltd. | Method for in-situ aberration measurement of optical imaging system in lithographic tools |
| CN101799640A (en) * | 2010-03-10 | 2010-08-11 | 中国科学院光电技术研究所 | Device and method for determining optimal focal plane position of lithography machine |
| CN101799640B (en) * | 2010-03-10 | 2012-03-21 | 中国科学院光电技术研究所 | Device and method for determining optimal focal plane position of lithography machine |
| CN102540751A (en) * | 2010-12-28 | 2012-07-04 | 上海微电子装备有限公司 | Method for detecting distortion and curvature of field of projection objective |
| US9423701B2 (en) | 2011-04-05 | 2016-08-23 | Asml Netherlands B.V. | Lithographic method and assembly |
| CN102200697A (en) * | 2011-06-03 | 2011-09-28 | 中国科学院上海光学精密机械研究所 | System and method for detecting wave aberration of photoetching projection objective |
| CN102200697B (en) * | 2011-06-03 | 2012-12-26 | 中国科学院上海光学精密机械研究所 | System and method for detecting wave aberration of photoetching projection objective |
| CN104303090A (en) * | 2012-05-17 | 2015-01-21 | 西铁城控股株式会社 | Aberration correction device and laser microscope |
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