CN1706993A

CN1706993A - Batch spherical semiconductor grain producing equipment and method

Info

Publication number: CN1706993A
Application number: CNA2005100729987A
Authority: CN
Inventors: 浜川圭弘; 室园干男; 高仓秀行; 山口由岐夫; 山形顺; 安田英典
Original assignee: KALIN 21 RISK INVESTMENT CO Ltd
Current assignee: KALIN 21 RISK INVESTMENT CO Ltd
Priority date: 2000-11-24
Filing date: 2001-11-26
Publication date: 2005-12-14
Also published as: JP3490969B2; JP2002164554A

Abstract

The invention relates to mass-producing method and apparatus for mass-producing spherical semiconductor particles. The method comprises storing a semiconductor in the crucible; the semiconductor in the crucible is heated and fused by induction heating means, then the fused semiconductor in a gas phase in the crucible is dropped from a nozzle. The fused semiconductor in the crucible and the fused semiconductor dropped from the nozzle are irradiated with excitation means. The method and apparatus of the invention can mass production of globular semiconductor which has uniform grain size with a simple operation comprising dropping the semiconductor fused in the crucible and irradiating the fused semiconductor. Thereby, the particles made by the above process are easily transfered into single crystal or polycrystal particles in a gas phase.

Description

The batch manufacturing method of spherical semiconductor grain and equipment

Technical field

The present invention relates to a kind of optoelectronic device and a kind of batch manufacturing method and equipment that is applicable to a large amount of making spherical semiconductor grains of making optoelectronic device etc.

In as herein described disclosing, term " pin knot " is understood to include following structure, be formed with n-, i-and p-type semiconductor layer in that the photo-electric conversion element of almost spherical is dried, and make these semiconductor layers outwards be provided with or inwardly be provided with thus from the outside with the inside of described order from this almost spherical photo-electric conversion element.

Background technology

The included photo-electric conversion element of the optoelectronic device that common prior art provides is made by the crystal silicon semiconductor wafer.The optoelectronic device of prior art is because its crystal making step complexity and cost is higher.In addition, the step of making semiconductor wafer is not only complicated, because it comprises cutting, section and the polishing of bulk-shaped monocrystal; And the also relatively waste of this step, because reaching the about more than 50% of initial bulk-shaped monocrystal on the volume by the crystal waste material of generations such as cutting, section, polishing.

The included photo-electric conversion element of the optoelectronic device that another prior art provides is made by non-crystalline silicon (being called for short " a-Si ") film, and it has solved problem recited above.Because the film photoelectric conversion layer is formed by plasma CVD (chemical Vapor deposition process) method, so the prior art optoelectronic device has following advantage, the for example bulk-shaped monocrystal cutting of many steps, section and polishing that no longer essential traditional method is required, and deposited film can be whole as device active layers.Yet this non-crystalline silicon optoelectronic device has following shortcoming, because non-crystal structure makes semi-conductor inside have a large amount of lattice defects (being gap state), non-crystal silicon solar cell has the problem that photoelectric transformation efficiency reduces because of the light-induced degradation phenomenon.Be head it off, now developed a kind of by adopting hydrogen treatment subduing the technology of lattice defect, thereby realized manufacturing such as electron devices such as non-crystal silicon solar cells.

Even yet this processing can not be eliminated the negative impact of lattice defect fully, for example non-crystal silicon solar cell still has the weakness of photoelectric transformation efficiency reduction by 15% to 25%.

A kind of development technology recently that is used to suppress light-induced degradation realizes a kind of stacking type solar cell, and wherein photoelectric activity i-type layer is made as thin as a wafer, and adopts 2 knot or 3 joint solar cells, can successfully light-induced degradation be suppressed to about 10% thus.Obviously its light-induced degradation degree reduces when the working temperature of solar cell is higher.Although now developed the building block technique that solar cell is worked under above-mentioned this condition, it can not satisfy all demands, thereby also needs further improvement.

Another is disclosed among the Japanese patent announcement JP-B27-54855 (1995) that has examined the prior art that overcomes the problems referred to above.According to the prior art, make a solar array in the following manner.Each spheroidal particle with p-type silicon spheroid and n-type silicon top layer is embedded in the aluminium foil with a plurality of holes.By removing n-type silicon top layer from the rear side etching of aluminium foil, the p-type silicon spheroid of inside is exposed.To expose formula silicon spheroid is connected on another aluminium foil plate.

In the prior art, in order to reduce cost by the consumption that reduces HIGH-PURITY SILICON, must be by reducing the mean thickness that the particulate external diameter reduces whole device.In order to improve efficiency of conversion, must increase optical receiving surface, for this purpose, particle must be provided with more close each other.In a word, it is densely arranged and be connected on the aluminium foil plate to need to have in a large number the particle of less external diameter.This makes that the step that particle is connected on the aluminium foil plate is complicated, and the result can not realize that sufficient cost reduces.

Need above-mentioned this spherical semiconductor grain to make as being disclosed in the solar array among the JP-B2 7-54855.In this solar array,, can obtain the photoelectricity power that produces to the silicon spherical semiconductor grain by irradiates light by the silicon spherical semiconductor grain is electrically connected on the tinsel substrate.

As U.S. Patent No. 5; 012; disclosed in 619; this spheroidal particle is made as follows; and solid-state material is crushed to particle with irregular profile; the gained particle adds one and is provided with grinding with in the garden tube of liner, and forms gas cyclone so that particle and liner collide or particle is run foul of each other in the tube of garden.

The prior art needs a lot of time and work to make spherical semiconductor grain, thereby is being relatively poor aspect the cost reduction.

Another prior art is disclosed among the patent announcement JP-A 8-239298 (1996) of Japanese unexamined.In the prior art, make a thinner silicon rod with following manner.Keep the end of vertical silicon rod to melt with one by ratio-frequency heating.After on the silicon rod that the silicon seed fusion bonding is extremely melted, silicon seed and silicon rod is vertically separated from one another, thus obtain the thin silicon rod of fineness degree less than 1mm.The prior art is to make thin silicon rod with the speed of for example 5mm/min to 10mm/min.But people expect and can make a large amount of spherical semiconductor grains with the speed more much higher than this manufacturing speed.

Summary of the invention

The object of the present invention is to provide the reliable high efficiency optoelectronic device of a kind of height, it can easily be made in a large number and reduce for example consumption of HIGH-PURITY SILICON of semiconductor material simultaneously, also promptly provides a kind of height the reliably high efficiency optoelectronic device that can use than the low cost manufacturing of a small amount of resource and energy expenditure.

Another object of the present invention is to provide a kind of method and apparatus that can easily make spherical semiconductor grain of simple operations in a large number.

A first aspect of the present invention provides a kind of optoelectronic device, comprising:

(a) a plurality of photo-electric conversion elements, each photo-electric conversion element has the shape of almost spherical and comprises one first semiconductor layer and one second semiconductor layer that is positioned at the first semiconductor layer outside, be used between first and second semiconductor layer, producing photoelectricity power, second semiconductor layer has an opening, and a part of first semiconductor layer comes out by this opening; With

(b) bearing, comprise one first conductor, one second conductor, and one be used to isolator that first and second conductor is electrically insulated from each other between first and second conductor, this bearing has the groove of a plurality of settings adjacent one another are, the groove internal surface constitutes by first conductor or by the tectum that is formed on first conductor, photo-electric conversion element is arranged in corresponding grooves, make photo-electric conversion element be shone by first conductor part that constitutes groove or tectum part institute beam reflected formed thereon, first conductor is electrically connected to second semiconductor layer of photo-electric conversion element, and second conductor is electrically connected to the expose portion of first semiconductor layer.

According to the present invention, the photo-electric conversion element of almost spherical is located in the corresponding recesses of bearing, and the internal surface of corresponding recesses constitutes by first conductor or by the tectum that is formed on first conductor.Therefore, external beam for example the daylight direct irradiation on each photo-electric conversion element, and after being positioned at first conductor part on the groove internal surface or being formed on tectum partial reflection on first conductor, be radiated on each photo-electric conversion element.

Because photo-electric conversion element is arranged in corresponding recesses,, that is to say that its setting is not intensive therebetween so be formed with at interval.Yet, having reduced the quantity of used photo-electric conversion element, the result can reduce the consumption of the high purity material (for example silicon) of photo-electric conversion element, and can more easily carry out photo-electric conversion element is connected to the step of bearing conductor.

In addition, groove is provided with adjacent one another arely, thereby external beam is reflected then by the internal surface of groove and is radiated on the photo-electric conversion element.Therefore, photo-electric conversion element can effectively utilize external beam and produce photoelectricity power.Realized that correspondingly the per unit area relative with the photo-electric conversion element light source produces the maximization of electric energy.

Photo-electric conversion element can be made by monocrystalline, polycrystalline or amorphous material, and can be made by silicon materials, compound semiconductor materials etc.Photo-electric conversion element can have pn structure, pin structure, Schottky barrier structure, MIS (metal-insulator-semiconductor, metal-insulator semiconductor) structure, homojunction structure, heterojunction structure etc.

Part exposes inner first semiconductor layer by the opening of outside second semiconductor layer, and the photoelectricity power output that this produces between first and second semiconductor layer when making rayed becomes possibility.Second semiconductor layer that is arranged in the corresponding light electric transition element of bearing corresponding recesses is electrically connected to first conductor of bearing.The expose portion of inside first semiconductor layer of corresponding light electric transition element is electrically connected to second conductor, and second conductor is formed on first conductor, and has isolator mediate.To form in the planar structure, photo-electric conversion element is connected with each other on the direction that is parallel to first and second conductors, thereby can produce big electric current at first conductor and second conductor extension.

Photo-electric conversion element can be complete spheroid, perhaps has the outside surface of approximate complete sphere.First semiconductor layer can be solid and the shape with almost spherical.Alternatively, first semiconductor layer can be formed on the outside surface of a core of making in advance.As further alternative, almost spherical first semiconductor layer can have a hollow middle body.

In the present invention, the preferred light electric transition element has the external diameter of 0.5mm to 2.0mm.

According to the present invention, photo-electric conversion element can have the external diameter of 0.5mm to 2.0mm, is preferably 0.8mm to 1.2mm, more preferably about 1.0mm.This make can reduce fully material for example HIGH-PURITY SILICON consumption and make the maximization of electric energy generation become possibility.In addition, thus spherical photo-electric conversion element in manufacturing processed, can easily process and can boost productivity.

In the present invention, the opening of preferred second semiconductor layer has 45 ° to 90 ° central angle θ 1.

By central angle θ 1 being set in 45 ° to 90 °, preferably set at 60 ° to 90 °, can reduce the amount of first semiconductor layer and second semi-conductor discarded part when forming opening, that is to say and can reduce spillage of material.In addition, central angle θ 1 being set in this scope makes opening can have enough areas to be used for being electrically connected between second conductor of first semiconductor layer and bearing.

In the present invention, the groove of preferred bearing has corresponding Polygons (for example honeycomb Polygons) opening, opening adjacent one another are is a successive, each groove is along narrowing down to its bottom direction, and first semiconductor layer of each photo-electric conversion element and second semiconductor layer are electrically connected to second conductor and first conductor respectively near the bottom of groove or its.

In the present invention, preferred first conductor is provided with circular first connecting hole, this first connecting hole is formed near the bottom of groove or its, described isolator is provided with circular second connecting hole, has common axis line with first connecting hole, photo-electric conversion element is arranged near the partial fixing of the second semiconductor layer opening at first connecting hole, the outer surface part that is positioned at second semiconductor layer opening top be electrically connected to first conductor first connecting hole end face or be electrically connected near its this end face part, and the expose portion of first semiconductor layer of photo-electric conversion element is electrically connected to second conductor by described second connecting hole.

In the present invention, the outer diameter D 1 of preferred light electric transition element, the inside diameter D 2 of the second semiconductor layer opening, and the inside diameter D 4 satisfied D1＞D3＞D2＞D4 that concern of the inside diameter D 3 of first connecting hole and second connecting hole.

According to the present invention, photo-electric conversion element is arranged near first connecting hole of the partial fixing of opening at first conductor, the expose portion of first semiconductor layer of photo-electric conversion element is electrically connected to second conductor by second connecting hole of the isolator of bearing, and first conductor of bearing and second conductor can easily be electrically connected to second semiconductor layer and first semiconductor layer of photo-electric conversion element respectively.

As for being electrically connected between second semiconductor layer and first conductor, the part that the second semiconductor layer outside surface is positioned at opening top is electrically connected near part this end face of the end face of first connecting hole and/or first conductor, and also promptly the inner peripheral surface of first connecting hole and/or first conductor are positioned near first connecting hole and around the part (see figure 1) of first connecting hole.

For example, each protuberance of second conductor that forms by elastic deformation can be inserted through second connecting hole, and is electrically connected to first semiconductor layer by the opening exposed portions.Alternatively, first semiconductor layer by the opening exposed portions can be located in second connecting hole electroconductive binder or via the conduction flange for example metal rim be connected to second conductor.

Outer diameter D 1 and inside diameter D 2-D4 be set at satisfy above-mentioned inequality and make it possible to achieve reliable electrical connection and can not cause disadvantageous short circuit.

In the present invention, preferred optically focused is chosen in than x=S1/S2 in 2 to 8 the scope, and wherein S1 is the port area of each groove of bearing, and S2 is the area that photo-electric conversion element comprises the cross section at its center.

A second aspect of the present invention provides a kind of optoelectronic device, comprising:

(a) a plurality of photo-electric conversion elements, each photo-electric conversion element has the shape of almost spherical and comprises one first semiconductor layer and one second semiconductor layer that is positioned at the first semiconductor layer outside, be used between first and second semiconductor layer, producing photoelectricity power, second semiconductor layer has an opening, and a part of first semiconductor layer exposes by this opening; With

(b) bearing, comprise one first conductor, one second conductor, and one be used to isolator that first and second conductor is electrically insulated from each other between first and second conductor, this bearing has the groove of a plurality of settings adjacent one another are, the groove internal surface is made of first conductor or the tectum that is formed on first conductor, photo-electric conversion element is arranged in corresponding grooves, make photo-electric conversion element be shone by first conductor part that constitutes groove or tectum part institute beam reflected formed thereon, first conductor is electrically connected to second semiconductor layer of photo-electric conversion element, and second conductor is electrically connected to the expose portion of first semiconductor layer

Wherein each photo-electric conversion element has the external diameter of 0.5mm to 2mm, and optically focused is chosen in than x=S1/S2 in 2 to 8 the scope, and wherein S1 is the port area of each groove of bearing, and S2 is the area that photo-electric conversion element comprises the cross section at its center.

A third aspect of the present invention provides a kind of optoelectronic device, comprising:

Wherein each photo-electric conversion element has the external diameter of 0.8mm to 1.2mm, and optically focused is chosen in than x=S1/S2 in 4 to 6 the scope, and wherein S1 is the port area of each groove of bearing, and S2 is the area that photo-electric conversion element comprises the cross section at its center.

For example, the opening of the corresponding recesses of bearing is for example hexagon of honeycomb Polygons.Each groove is along narrowing down to its bottom direction, and photo-electric conversion element is located at the bottom of each groove.Each photo-electric conversion element is in the bottom of groove or be electrically connected to the conductor of bearing near it.Because the opening of corresponding recesses is Polygons and is mutual successive, so can be radiated on the photo-electric conversion element by bearing all light beams that all surface received relative with light source (for example daylight) except that the photo-electric conversion element zone.Therefore, can realize so-called light-focusing type photo-electric conversion element, wherein optically focused is set in for example 2 to 8 (preferred 4 to 6) than x=S1/S2.This feasible interval that can increase between the photo-electric conversion element, the quantity of reduction photo-electric conversion element, and simplification becomes possibility with the step that photo-electric conversion element is connected to bearing.Therefore, can reduce, thereby can implement the present invention inexpensively as the semi-conductive consumption of the high purity of photo-electric conversion element material.Bearing has quite simple structure, thereby has the advantage of productivity aspect and can easily make.

The experiment that the inventor carries out shows, if will be according to optoelectronic device of the present invention, wherein the silicon photo-electric conversion element of almost spherical has 800 μ m to 1, the external diameter of 000 μ m and optically focused ratio are set in 4-6, convert imaginary flat type to, the weight of its used silicon equals to constitute the weight of the silicon of all photo-electric conversion elements of optoelectronic device, and its area equal optoelectronic device with the plane perpendicular from the light beam of light source on shadow area, then this imaginary flat board has the thickness of about 90 μ m to 120 μ m.This explanation is used to produce that the silicon consumption of 1W electric power is low reaches 2g, and it has epoch making significance.Be formed in first kind of prior art of the photo-electric conversion element on the semiconductor wafer composed of monocrystalline silicon in above-mentioned employing, thick 350 μ m to the 500 μ m that reach of silicon single-crystal, its thickness is up to 1mm under the situation that comprises the loss of cutting into slices.Therefore, in first kind of prior art, the silicon consumption that is used to produce the 1W electric power is about 15 to 20g.It is much lower to be appreciated that the present invention can make in first kind of prior art of silicon amount ratio.

When optically focused is set at greater than 8 the time than x, can reduce the quantity of required photo-electric conversion element, and can further reduce the silicon consumption that is used to produce the 1W electric power.Yet in fact,, will reduce, thereby the corresponding performance that reduces optoelectronic device as the light gathering efficiency of luminous energy that photo-electric conversion element absorbs with the ratio that is incident on the luminous energy on the groove along with the increase of optically focused than x.

By as mentioned above the external diameter of each photo-electric conversion element being set in 0.5mm to 2.0mm (being preferably 0.8mm to 1.2mm) and optically focused is set at 2 to 8 (being preferably 4 to 6) than x, can reduce the quantity of photo-electric conversion element, the silicon consumption that is used to produce the 1W electric power can be reduced, and the step that photo-electric conversion element is electrically connected to bearing can be simplified.Therefore, the external diameter value of each photo-electric conversion element and optically focused than the combination of x for the quantity that reduces photo-electric conversion element with to reduce the silicon consumption that is used to produce the 1W electric power be important.

When the external diameter of each photo-electric conversion element during less than 0.5mm, although the silicon consumption reduces, the quantity of required photo-electric conversion element becomes excessive.When the external diameter of each photo-electric conversion element during less than 2mm, although the quantity of required photo-electric conversion element reduces, the silicon consumption becomes excessive.

When optically focused than less than 2 the time, can not reduce the silicon consumption fully.When optically focused than greater than 8 the time, light gathering efficiency becomes less than for example 80%, thus the corresponding reduction of its performance.By optically focused is set in the suitable scope than x, the present invention can make light gathering efficiency greater than 80% or even 90%.

According to the present invention, be set in above-mentioned scope by external diameter value and optically focused than x with each photo-electric conversion element, can be achieved as follows remarkable advantage, promptly the quantity of required photo-electric conversion element and the being used to silicon consumption that produces the 1W electric power can be reduced to 15 to 1/10 of respective numbers described in the third prior art significantly.

In adopting non-crystalline silicon photo-electric conversion element and the optoelectronic device of optically focused than the gathering light beam with above-mentioned scope, the temperature of photo-electric conversion element can be increased to 40 ℃ to 80 ℃, is higher than the situation that adopts non-crystalline silicon sheet-type photo-electric conversion element.This makes the degeneration can suppress the non-crystalline silicon photo-electric conversion element, thereby can prolong the life-span of optoelectronic device.

In the present invention, the preferred light electric transition element has the pn knot of following mode, second semiconductor layer that promptly has a kind of conductivity type is formed on the outside of first semiconductor layer with another kind of conductivity type, and second semiconductor layer has wideer optical band gap (seeing Figure 14) than first semiconductor layer.

In the present invention, the preferred light electric transition element has the pin knot of following mode, promptly has a kind of first semiconductor layer, noncrystal intrinsic semiconductor layer of conductivity type, noncrystal second semiconductor layer that has than the another kind of conductivity type of the wideer optical band gap of first semiconductor layer outwards is provided with (seeing Figure 15 and 16) with this order.

In the present invention, preferred first semiconductor layer and second semiconductor layer are made by n-type silicon and the noncrystal SiC of p-type respectively.

In the present invention, the n-type silicon of preferably making first semiconductor layer is n-type silicon single crystal or n-type crystallite (μ c) silicon.

According to the present invention, form pn or pin heterojunction window structure by different types of non-crystalline semiconductor.The optical band gap of second semiconductor layer that is positioned at light incident side and is made by window material is set the optical band gap of being wider than inner first semiconductor layer for.With this method, make the optical absorption coefficient of second semiconductor layer less, that is to say, few by the light beam that second semiconductor layer absorbs, thus reduced the speed of the electronics-hole recombine of upper layer, thereby reduced the optical absorption loss.In addition, thus the light sensitivity that has improved shortwave one side obtains wide crack window role.Result as these effects can improve effciency of energy transfer.

Especially, the pin junction structure can import the intrinsic semiconductor layer (i layer) that produces layer as photoelectricity power with more luminous energy, thereby the light sensitivity that has improved shortwave one side obtains wide crack window role.The invention enables the far better Conversion of energy operation of the third particle of the prior art that to carry out being formed on p-type silicon spheroid outside than n-type silicon top layer.

The effect of i layer with photo-electric conversion element of pin knot is that the photoabsorption by wherein forms electron-hole pair, produces photoelectric current, and is carried.The effect of p layer and n layer is to come the gathered light current carrier by fermi level being fixed near the position of valence band or conduction band, and produces electronics and the hole that an internal electric field is used for the i layer is produced and be transported to two electrodes.

The invention provides a kind of batch manufacturing method of spherical semiconductor grain, comprising: storing semiconductor in crucible; By the semi-conductor in heating unit heating and the fusion crucible; Fused semiconductor from crucible is dripped from nozzle; With by described fused semiconductor in the vibrating device vibration crucible or the fused semiconductor that in gas phase, drips.

The present invention also provides a kind of batch manufacturing method of spherical semiconductor grain, comprising: crystallisation step is used for by crystallization apparatus liquid state or the solid granulates that is present in gas phase being heated, thereby described particle is transformed into monocrystalline or polycrystalline particle.

The present invention also provides a kind of batch manufacturing method of spherical semiconductor grain, the crystal semiconductor particle that makes a kind of conductivity type is by the passage in the material gas, contain adulterated atom of crystal semiconductor particle needs or molecule in this material gas, thereby on each crystal semiconductor particle, form the upper layer of another kind of conductivity type.

The present invention also provides a kind of batch process equipment of spherical semiconductor grain, comprising: crystallization apparatus is used for the liquid state or the solid granulates that are present in gas phase are heated, thereby described particle is transformed into monocrystalline or polycrystalline particle.

The present invention also provides a kind of batch process equipment of spherical semiconductor grain, comprise: dispersion device, be used for making the passage of a kind of crystal semiconductor particle of conductivity type by a material gas, contain adulterated atom of crystal semiconductor particle needs or molecule in this material gas, thereby on each crystal semiconductor particle, form the upper layer of another kind of conductivity type.

A fourth aspect of the present invention provides a kind of batch process equipment of spherical semiconductor grain, comprising: crucible is used for storing semiconductor; Heating unit is used for heating the also semi-conductor of fusion crucible; Nozzle is used for the fused semiconductor drippage from crucible; And vibrating device, be used to vibrate described fused semiconductor, and the fused semiconductor that will drip is transformed into the spheroidal particle with single-size diameter in gas phase.

According to the present invention, semi-conductor exists in the crucible and by heating unit makes its fusing.The gained fused semiconductor vibrates from the nozzle drippage and by vibrating device.Consequently, the fused semiconductor from the nozzle drippage is transformed into spheroidal particle gas phase.Spheroidal particle has the diameter of approximately constant.In this way, can easily make spherical semiconductor grain in a large number with simple operations.Term " gas phase " can be air or rare gas elementes such as Ar, N2, even comprises vacuum.

Be in liquid form rather than solid form of straight lines from the fused semiconductor of nozzle drippage.Therefore, can easily make a large amount of spherical semiconductor grains at short notice at high speed.For example, the present invention can be by making spherical semiconductor grain from nozzle with the speed drippage fused semiconductor of 1cm/s to 1m/s, and this speed is more much higher than above-mentioned speed of the prior art.

In the present invention, preferably produce equipment in batches and further comprise the device that is used for the pressurization of crucible fused semiconductor.

In the present invention, preferred described pressurizing device is a source of the gas, and being used for that air pressure is higher than atmospheric rare gas element provides to the space of crucible semi-conductor top.

In the present invention, the spatial air pressure that preferably jet exit is communicated is chosen as the air pressure that is lower than semi-conductor superjacent air space in the crucible.

In the present invention, preferably be provided with a plurality of nozzles, each nozzle has the length of internal diameter and the 1mm to 100mm of 1 ± 0.5mm.

In the present invention, preferably each nozzle has the length of 5mm to 10mm.

According to the present invention, the fused semiconductor in the crucible can pressurize with gas or liquid or by adopting piston to wait.The fused semiconductor of pressurization drips from crucible.For example, in order to use the gas pressurization fused semiconductor, air pressure is higher than atmospheric rare gas element Ar, N2 etc. provides the space of semi-conductor top to the crucible from source of the gas.Alternatively, jet exit below spatial air pressure can be set at the air pressure that is lower than semi-conductor superjacent air space in the crucible, feasible fused semiconductor from crucible drips from nozzle.Nozzle inside diameter and length are made as 1 scholar 0.5mm and 1mm to 100mm (preferred 5mm to 10mm) respectively, for example the pressurization by pressurizing device can make fused semiconductor drip with the constant flow velocity from nozzle, and can be owing to its deadweight causes with too high flow velocity drippage.This makes can accurately make the spheroidal particle with single-size diameter.

In the present invention, preferred heating unit comprises the high frequency electric source that is located near the load coil of crucible and is used to encourage load coil.

In the present invention, preferred heating unit is the resistive heating device that is used for heating crucible.

That is to say, be used for the semi-conductive heating unit of heating crucible and can have the structure that is used for induction heating, comprise ruhmkorff coil and high frequency electric source, perhaps can be the electric heater that resistive heating device is for example used the joule heating heating crucible.

In the present invention, preferred vibrating device has the vibrational frequency of 10Hz to 1kHz.

Be provided with by this, fused semiconductor is transformed into the spherical semiconductor grain with single-size diameter, make and to make spherical semiconductor grain in a large number.

In the present invention, preferred vibrating device applies sound wave or ultrasonic wave to the fused semiconductor that is dripping, thus the fused semiconductor that vibration is being dripped.

According to the present invention, apply sound wave or ultrasonic wave and can accurately fused semiconductor be transformed into spheroidal particle with single-size diameter to the fused semiconductor that is dripping is feasible.

In the present invention, preferred nozzle is vibrated, and vibrating device comes vibrating nozzle by to-and-fro movement.

In the present invention, preferred vibrating device drives nozzle makes jet exit along the direction vibration perpendicular to nozzle axis, and its Oscillation Amplitude A is less than waiting to make 1/2 of particle outer diameter D 1.

In the present invention, preferred vibrating device is along the axis direction vibrating nozzle of nozzle.

According to the present invention, make the nozzle vibration so that reciprocating near its outlet at least, this makes can accurately make the spherical semiconductor grain with single-size diameter.Make jet exit along (also being A＜D1/2), make and accurately to make spheroidal particle less than waiting to make 1/2 of particle outer diameter D 1 so that have the homogeneous granules diameter with outer diameter D 1 perpendicular to the vibration of the direction of its axis and amplitude A.Alternatively, nozzle can vibrate along axis, also i.e. vibration vertically.This also makes can make the spheroidal particle with homogeneous diameter (D1).

In the present invention, preferred vibrating device is the air pressure modifier that is used for changing the air pressure of crucible semi-conductor superjacent air space.

In the present invention, preferred vibrating device involving vibrations film, it is arranged to communicate with the space of semi-conductor top in the crucible, and drive source, is used to make described tympanum to-and-fro movement.

In the present invention, preferred vibrating device comprises actuator chamber, and it links to each other with the space of semi-conductor top in the crucible, and drive source, is used to make the air pressure vibration in the described actuator chamber.

According to the present invention, the vibrating device that is used for vibrating fused semiconductor is to be used for applying the air pressure modifier that air pressure changes this space air pressure by the space to crucible semi-conductor top.The air pressure modifier may be embodied as a tympanum and one and is used to make the reciprocating drive source of this tympanum (for example motor and crank), is used to change the drive source that this actuator chamber volume makes the air pressure vibration in this actuator chamber thereby perhaps be embodied as an actuator chamber and one.

In the present invention, preferred vibrating device makes the crucible vibration.

According to the present invention,, can wherein store the crucible of fused semiconductor by the drive source vibration in order to vibrate fused semiconductor temporarily.

In the present invention, the equipment of preferably producing in batches further comprises the Lorentz force generation device, is used for applying Lorentz force to the fused semiconductor from the nozzle drippage, thereby forms particle by the clamping action that reduces the fused semiconductor cross section.

According to the present invention, electric current is flowed through from the conduction fused semiconductor of nozzle drippage, and around fused semiconductor, form AC magnetic field, thereby Lorentz force is applied on the fluid column formula fused semiconductor, the clamping action of generation reduces its cross section.This makes and can accurately the fused semiconductor from the nozzle drippage be transformed into the spheroidal particle with homogeneous diameter.

A fifth aspect of the present invention provides a kind of spherical semiconductor grain to produce equipment in batches, and comprising: crucible is used for storing semiconductor temporarily; Heating unit is used for heating the also semi-conductor of fusion crucible; Nozzle is used for the fused semiconductor drippage from crucible; Vibrating device is used to vibrate described fused semiconductor, and the fused semiconductor that will drip in gas phase is transformed into the spheroidal particle with single-size diameter; And crystallization apparatus, be used in gas phase heating from the liquid state of nozzle drippage or solid granulates controlling its speed of cooling, thereby described particle is transformed into monocrystalline or polycrystalline particle.

A sixth aspect of the present invention provides a kind of spherical semiconductor grain to produce equipment in batches, comprises crystallization apparatus, is used for the liquid state or the solid granulates that are present in gas phase are heated, thereby described particle is transformed into monocrystalline or polycrystalline particle.

According to the present invention, the liquid state or the solid granulates that drip from nozzle are also melted once more by the crystallization apparatus heating, thereby particle is transformed into monocrystalline or polycrystalline particle in gas phase.

Particle to be heated can be fusion (promptly liquid) semiconductor grain or the solid granulates that formed through cooling by the fused semiconductor particle from the nozzle drippage, perhaps or even by the particle that grinds or the bulk semiconductor of crushing obtains.

In the present invention, preferred crystallization apparatus is a laser source, is used for to described particle irradiating laser.

In the present invention, preferred crystallization apparatus is a radiant heat source, is located at and particle path position adjacent, is used for by the radiant heat heated particle.

In the present invention, preferred crystallization apparatus heated particle makes the particulate speed of cooling have a gentle distribution, thereby prevention cracks in particle and it is noncrystal to stop particle to become.

According to the present invention, crystallization apparatus can be laser source or be used to produce photothermal radiant heat source.Temperature lowering speed when crystallization apparatus has reduced the particle cooling, thus prevention cracks in particle and it is noncrystal to stop particle to become.Consequently, can form monocrystalline or polycrystalline spheroidal particle reliably.

A seventh aspect of the present invention provides a kind of spherical semiconductor grain to produce equipment in batches, comprises crucible, is used for storing semiconductor temporarily; Heating unit is used for heating the also semi-conductor of fusion crucible; Nozzle is used for the fused semiconductor drippage from crucible; Vibrating device is used to vibrate described fused semiconductor, and the fused semiconductor that will drip in gas phase is transformed into the spheroidal particle with single-size diameter; Crystallization apparatus is used in gas phase heating from the liquid state of nozzle drippage or solid granulates controlling its speed of cooling, thereby described particle is transformed into monocrystalline or polycrystalline particle; And dispersion device, be used for making the passage of a kind of crystal semiconductor particle of conductivity type by a material gas, contain adulterated atom of crystal semiconductor particle needs or molecule in the material gas, thereby on each crystal semiconductor particle, form the upper layer of another kind of conductivity type.

The invention provides a kind of spherical semiconductor grain and produce equipment in batches, wherein a kind of crystal semiconductor particle of conductivity type is by the passage in the material gas, contain adulterated atom of crystal semiconductor particle needs or molecule in the material gas, thereby on each crystal semiconductor particle, form the upper layer of another kind of conductivity type.

According to the present invention, adopt that gaseous diffusion method or solid-state diffusion method can each goes up the upper layer of the another kind of conductivity type of formation (for example n-type) at the crystal semiconductor particle of a kind of conductivity type (for example p-type) with simple operations.The gaseous diffusion method is a kind of technology that impurity is added the high temperature silicon surface with gas form.The solid-state diffusion method is that a kind of diffusant that will contain impurity is deposited on the silicon face then at high temperature to its technology of heat-treating.

In the present invention, preferred described passage vertically extends, and carries out the upper layer diffusion when the crystal semiconductor particle falls by this passage.

An example that forms diffusion layer by method of diffusion on the surface of each silicon spheroid is illustrated below for forming shallow n-type diffusion layer by the gaseous diffusion method in each p-type silicon spheroid.Adopt gases such as P2O5, POCl3, PH3 as diffuse source.At first, the rare gas element that will contain diffuse source and small quantity of hydrogen imports a diffusion layer and forms the space, and it is adjacent with the laser beam irradiation space and isolate with the latter aspect atmosphere that diffusion layer forms the space, and diffusion layer formation space is full of rare gas element.Carrying out high quality by laser beam irradiation once more after the crystallization, p-type silicon spheroid forms sky from its top by diffusion layer and asks to its bottom, remains on high temperature simultaneously.Along with p-type silicon spheroid forms the space by diffusion layer, its each on its whole surface, be formed with for each silicon spheroid as solar cell institute must the degree of depth n-type diffusion layer.By continuous importing rare gas element and suitably the control diffusion layer form spatial atmosphere, can carry out this step continuously, thereby make the silicon spheroid that all is formed with upper layer on a large amount of each.

In the present invention, preferably, has the upper layer of desired thickness with formation thereon to owing to the crystal semiconductor particle that is deposited with diffusant on it is heated by described passage.

According to the present invention, for example make p-type silicon spheroid form the space to its bottom, and in this process from its top by diffusion layer, its each on its whole surface, all be formed with n-type diffusion layer.Then a large amount of gained silicon spheroid is added in the container of making by quartz etc. and once more through heat-treated.Thereby formation has the n-type diffusion layer of desired thickness.

In the present invention, preferred semiconductor is a silicon.

According to the present invention, the present invention can implement with another kind of semi-conductor.

Of the present invention the provides a kind of photo-electric conversion element from all directions, comprises a plurality of semiconductor layers that formed by above-mentioned batch process equipment.

A ninth aspect of the present invention provides a kind of optoelectronic device, comprises a plurality of above-mentioned photo-electric conversion elements.

A tenth aspect of the present invention provides a kind of spherical semiconductor grain a large amount of making methods, comprises the steps: heating and melting semiconductor; Drippage fused semi-conductor in gas phase; And vibrate described fused semi-conductor.

A eleventh aspect of the present invention provides a kind of spherical semiconductor grain a large amount of making methods, comprise the steps: in gas phase the semiconductor grain that is dripping is heated and fusing once more, thereby and semiconductor grain is transformed into monocrystalline or poly semiconductor particle.

In the present invention, preferred a large amount of making methods also are included in and contain the step that described monocrystalline or poly semiconductor particle need mix and spread in the gas of composition.

According to the present invention, adopt the above-mentioned photo-electric conversion element of making by spherical semiconductor grain can easily make optoelectronic device.Adopt the optoelectronic device of this photo-electric conversion element to produce the highest electric power of relative per unit area with light source with the least possible monocrystalline or polycrystalline semiconductor material.Photo-electric conversion element can not only be made by monocrystalline or polycrystalline, also can be made by amorphous material.

According to the present invention,, can improve photoelectric transformation efficiency by between first semiconductor layer and pin knot layer, introducing crystallite (μ c) semiconductor layer with high conductivity.The heterojunction of noncrystal pin layer or the noncrystal pin layer and second semiconductor layer can be realized efficient photocarrier gathering, and has reduced the recombine loss of photocarrier.

Non-crystalline semiconductor layer its temperature when receiving by bearing groove internal surface beam reflected is increased to 40 ℃ to 80 ℃.This has suppressed the deterioration of light transfer characteristic, thereby is favourable.Because each photo-electric conversion element all has the shape of almost spherical, suppressed to be used to receive the increase of incident light energy of the per unit area of direct beam or reflected beam, this constrains the deterioration of having made light transfer characteristic.

In the present invention, preferred first semiconductor layer is the direct band-gap semicondictor layer.

In the present invention, preferred described direct band-gap semicondictor layer is made by the semi-conductor that is selected from following group, and this group comprises InAs, GaSb, CuInSe2, Cu (InGa) Se2, CuInS, GaAs, InGaP and CdTe.

According to the present invention, adopt to absorb first semiconductor layer of the direct band-gap semicondictor layer of light beam easily as inside, make to obtain sufficiently high electronics and hole migration probability that this also helps to improve photoelectric transformation efficiency.

In the present invention, preferably each all has a plurality of bearings setting adjacent one another are of outward extending peripheral portion, and first conductor part of a bearing peripheral portion and mutual be electrically connected stacked on top of each other with second conductor part of another bearing peripheral portion in every pair of bearing adjacent one another are.

In the present invention, preferred described peripheral portion have upwards protuberance or downward protuberance, and in every pair of bearing adjacent one another are a bearing the portion that projects upwards or the portion that projects upwards of protuberance and another bearing or downward protuberance contact with each other and are electrically connected mutually downwards.

According to the present invention, in a plurality of bearings of photo-electric conversion element are installed, first conductor part of a bearing peripheral portion and mutual be electrically connected stacked on top of each other in every pair of bearing adjacent one another are with second conductor part of another bearing peripheral portion, thus the photoelectricity power of the corresponding bearing that will be produced by photo-electric conversion element is connected in series mutually.This makes can export required high pressure.

According to the present invention, in every pair of bearing adjacent one another are the portion that projects upwards of peripheral portion and downwards protuberance, a plurality ofly project upwards portion or a plurality of downward protuberance is electrically connected (seeing Figure 12 and 13) mutually, thereby can make the groove of each bearing more close each other, and groove as much as possible and photo-electric conversion element can be arranged in the limited area.

The present invention is by reducing the quantity of photo-electric conversion element, make the consumption and the simplification that can reduce photo-electric conversion element material (particularly Ang Gui silicon) significantly that photo-electric conversion element is connected to the step of bearing, thereby improved productivity and reduced cost.Especially, adopt, make it possible to achieve a kind of making method that can save resource and energy according to photo-electric conversion element of the present invention.Daylight etc. are reflected by first conductive surface that constitutes each groove internal surface of bearing or tectal surface formed thereon, and the gained reflected light is radiated on the photo-electric conversion element.In this way, can utilize incident light efficiently.First conductor or tectum formed thereon not only are used to reflect incident light, and are used to guide electric current (first conductor is connected to second semiconductor layer of corresponding light electric transition element).Owing to have simple structure, so bearing has higher productivity.

Especially, be set in 0.5mm to 2.0mm (being preferably 0.8mm to 1.2mm) and optically focused is set at 2 to 8 (being preferably 4 to 6) than x by external diameter each photo-electric conversion element, the present invention can be achieved as follows remarkable advantage, the quantity that promptly is used to produce the silicon consumption of 1W electric power and required photo-electric conversion element can be reduced to significantly the third of the prior art 1/5 to 1/10.The consumption that reduces silicon makes and can realize optoelectronic device with low cost.Thereby the quantity simplification that reduces required photo-electric conversion element is electrically connected to the step of bearing with photo-electric conversion element, thereby has improved productivity, and this also helps to realize optoelectronic device cheaply.

Therefore, the present invention can the reliable high efficiency optoelectronic device of a kind of height.

By the optical band gap of noncrystal second semiconductor layer of outside being set for the optical band gap of first semiconductor layer of being wider than center side, form pn or pin knot.With this method, light beam absorbs seldom by second semiconductor layer of the light incident side that window material is made, thereby has reduced the recombine speed of upper layer, and obtains wide crack window role.Result as these effects can improve effciency of energy transfer.

Crystallite (μ c) semiconductor layer that will have high conductivity is inserted between center side first semiconductor layer and the outside pin knot layer and can improves effciency of energy transfer.

The present invention also can improve effciency of energy transfer by adopting direct band gap first semiconductor layer.

In addition, the present invention makes the manufacturing of photo-electric conversion element become easy.

The present invention makes and can make the spherical semiconductor grain with single-size diameter in a large number by semi-conductor that has melted crucible from the nozzle drippage and the simple operations that makes this fused semiconductor vibration.So the particle of making can easily be transformed into monocrystalline or polycrystalline particle in gas phase.Can easily on each crystal semiconductor particle, form upper layer by mixing.

Description of drawings

From the detailed description that provides with reference to the accompanying drawings other and further purpose, characteristic and advantage can be clearer of the present invention.In the accompanying drawing:

Fig. 1 is the local amplification view of optoelectronic device 1 according to an embodiment of the invention;

Fig. 2 is the sectional view of the structure of expression optoelectronic device 1;

Fig. 3 is the decomposition diagram of the optoelectronic device 1 of Fig. 2;

Fig. 4 is the orthographic plan of bearing 3 parts;

Fig. 5 is the sectional view of photo-electric conversion element 31, and wherein photo-electric conversion element 31 is the pattern before each photo-electric conversion element 2 is installed on the bearing 3;

Fig. 6 is a sectional view, the making method of the assembly 4 of expression light face conversion element 2 and bearing 3;

Fig. 7 is a sectional view, and expression forms the method for opening 32 by cutting each photo-electric conversion element 31;

Fig. 8 is a simplified perspective view, and expression is inserted method in the corresponding recesses 17 of bearing 3 with photo-electric conversion element 2;

Fig. 9 is a skeleton view, and how interconnection the assembly 4 and the 4b of expression photo-electric conversion element 2 and bearing 3 be;

Figure 10 is

peripheral portion

61 and 61b and near the view sub-anatomy thereof of assembly 4 shown in Fig. 9 and 4b;

Figure 11 is a simplified side view, and how

expression assembly

4,4b and 4c are electrically connected mutually;

Figure 12 is the sectional view of the electric connection structure of assembly 4 adjacent one another are according to another embodiment of the present invention and 4b;

Figure 13 be according to yet another embodiment of the invention assembly adjacent one another are 4 and the sectional view of the electric connection structure of 4b;

Figure 14 is the part sectioned view of photo-electric conversion element 2 according to another embodiment of the present invention;

Figure 15 is the part sectioned view of photo-electric conversion element 2 according to yet another embodiment of the invention;

Figure 16 is the part sectioned view of photo-electric conversion element 2 according to yet another embodiment of the invention;

Figure 17 represents the one-piece construction of spherical semiconductor grain batch process equipment according to a further aspect of the present invention with simplified way;

Figure 18 is the workflow diagram of the equipment of Figure 17;

Figure 19 represents to be used for fused semiconductor is provided to nozzle 209 and with its structure from nozzle 209 drippages from crucible 208 with simplified way;

Figure 20 is the simplified cross-sectional view of melt portions 207;

Figure 21 represents from the fused semiconductor of jet exit 218 drippages of each nozzle 209 be how to form spheroidal particle;

Figure 22 A-22D represents the analog result of being undertaken by the inventor, and the cubes fused semiconductor particle that shows drippage is how to change its shape to become spheric;

Figure 23 A and 23B are the sectional view of semiconductor grain according to another embodiment of the present invention;

Figure 24 is the simplified cross-sectional view of vibrating device 228 according to another embodiment of the present invention;

Figure 25 is the simplified cross-sectional view of vibrating device 234 according to yet another embodiment of the invention;

Figure 26 forms the sectional view of the concrete structure of device 225 for upper layer; And

Figure 27 represents the structure of upper layer formation device 238 according to another embodiment of the present invention with simplified way.

Embodiment

The preferred embodiments of the present invention are described with reference to the accompanying drawings.

Fig. 1 is the local amplification view of optoelectronic device according to an embodiment of the invention.Fig. 2 is the sectional view of expression optoelectronic device 1 structure.Fig. 3 is the decomposition diagram of the optoelectronic device 1 of Fig. 2.Optoelectronic device 1 has following basic structure.A plurality of common spherical photo-electric conversion elements 2 and bearing 3 construction components 4 that photo-electric conversion element 2 is installed, be embedded in by lucite material PVB (poly (vinylbutyral) for example, polyvinyl butyral) or in the packing layer 5 made of EVA (ethylene vinyl acetate, ethylene vinyl acetate copolymer).The transparent protection plate of being made by polycarbonate or analogue 6 is located at light source (for example daylight) side of packing layer 5 and is fixed thereon.A waterproof rear cowl 12 is fixed on the surface of packing layer 5 side (bottom side of Fig. 2) opposite with protecting sheet 6.Like this, optoelectronic device 1 presents writing board shape on the whole.

Each photo-electric conversion element 2 has first semiconductor layer 7 and is positioned at second semiconductor layer 8 of first semiconductor layer, 7 outsides.Be formed with opening 9 at second semiconductor layer 8.The part 10 of first semiconductor layer 7 (bottom of Fig. 1) exposes by opening 9.When light beam during from the irradiation of the top of Fig. 1, generation photoelectricity power between first semiconductor layer 7 of photo-electric conversion element 2 and second semiconductor layer 8.

By an isolator 15 is clipped between first conductor 13 and second conductor 14, construct bearing 3 in this way.That is to say that first conductor 13 and second conductor 14 are electrically insulated from each other by isolator 15.Each first conductor 13 and second conductor 14 can be aluminium foil plate or other metal sheet.Isolator 15 can for example polyimide or certain other insulating material be made by the synthetic resins material.Be provided with a plurality of grooves 17 adjacent to each other.The internal surface of groove 17 is the surface of first conductor 13.Photo-electric conversion element 2 is located at the bottom of corresponding recesses 17.

Fig. 4 is the orthographic plan of bearing 3 parts.In the present invention, the opening 18 of groove 17 is Polygons.In this embodiment, they present cellular, also are regular hexagonal.According to another embodiment of the present invention, the opening 18 of each groove 17 presents the Polygons that another kind has three above summits.The length W1 of each opening 18 (sees for example 2mm that is of figure.Opening 18 adjacent one another are is successive; That is to say that groove 17 is connected to each other by inverted U-shaped curved part 19 (see figure 1)s.This structure makes can hold groove 17 as much as possible in the zone relative with light beam 11, and makes that the internal surface (i.e. the surface of first conductor 13) of groove 17 can be reflected incident light and the gained reflected light is directed in the corresponding photo-electric conversion element 2.Therefore, this structure provides bigger optically focused ratio.

Each groove 17 narrows down to the bottom, and presents for example para-curve cross section.In the bottom of each groove 17, first semiconductor layer 7 of photo-electric conversion element 2 is electrically connected on second conductor 14 of bearing 3 by connection portion 21.Near the bottom of each groove 17 or its, second semiconductor layer 8 of photo-electric conversion element 2 is electrically connected on first conductor 13 of bearing 3 by connection portion 21.

Fig. 5 is the sectional view of photo-electric conversion element 31, and wherein photo-electric conversion element 31 is the pattern before each photo-electric conversion element 2 is installed on the bearing 3.The cross-section structure of Fig. 5 photo-electric conversion element 31 is similar to the cross-section structure of each photo-electric conversion element 2 shown in Fig. 1.Spherical first semiconductor layer 7 is made by n-type silicon, can be non-crystalline silicon, silicon single crystal or polysilicon.Second semiconductor layer 8 that is positioned at first semiconductor layer, 7 outsides is made by p-type silicon, also can be non-crystalline silicon, silicon single crystal or polysilicon.When the optical band gap of second semiconductor layer 8 is set to such an extent that be wider than the optical band gap (for example second semiconductor layer 8 is made by p-type a-SiC) of first semiconductor layer 7, can obtain wide crack window effect (wide gap windowaction).

According to another embodiment of the present invention, first semiconductor layer 7 is made by the direct band-gap semicondictor that is selected from following group shown in Fig. 5, and this group semi-conductor comprises InAs, CulnSe2, Cu (InGa) Se2, CuInS, GaAs, InGaP and the CdTe that is n-type electroconductibility.Second semiconductor layer 8 is formed on first semiconductor layer of being made by this direct band-gap semicondictor 7.Second semiconductor layer 8 is made by the semi-conductor that is selected from following group, and this group semi-conductor comprises AlGaAs, the CuInSe2, Cu (InGa) Se2, GaAs, AlGaP and the CdTe that are p-type electroconductibility and similar compounds semi-conductor with it.Form the pn junction structure in this way.

When non-crystalline semiconductor is used as first semiconductor layer 7 and second semiconductor layer 8,, can form (the back explanation of pin junction structure by between first semiconductor layer 68 and second semiconductor layer 70, forming an i-type semiconductor layer 69; See Figure 15).

The following describes the method for the assembly 4 that is used to make photo-electric conversion element 31 (see figure 5)s and bearing 3 (see figure 1)s.

Fig. 6 sectional view is represented the making method of the assembly 4 of photo-electric conversion element 2 and bearing 3.After having made the spherical photo-electric conversion element 31 shown in Fig. 5, photo-electric conversion element 2 is cut as shown in Figure 6.In the photo-electric conversion element 2 of each acquisition, as shown in Figure 6, the part 10 of first semiconductor layer 7 is exposed by the opening 9 of second semiconductor layer 8.The shape of opening 9 obtains by plane cutting photo-electric conversion element 31, has less than 18 °.Central angle θ 1.Central angle θ 1 can be in 45 ° to 90 ° scope for example.Central angle θ 1 is preferred in 60 ° to 90 ° scope.The outer diameter D 1 of each photo-electric conversion element 31 can be in the scope of for example 0.5mm to 2.0mm.Outer diameter D 1 is preferred in the scope of 0.8mm to 1.2mm.In Fig. 6, symbol D2 represents the internal diameter of opening 9.In 2 to 8 scope, wherein S1 is the port area of each groove 17 of bearing 3 to optically focused than x=S1/S2, and S2 comprises the area that cuts at its center for each photo-electric conversion element 2.Optically focused than x preferably in 4 to 6 scope.

Fig. 7 sectional view is represented to form the method for opening 9 by cutting each photo-electric conversion element 31.When vacuum suck is carried out by absorption layer 34 in the top of spherical photo-electric conversion element 31 with each, grind by 35 pairs of spherical photo-electric conversion elements 31 of endless belt shape abrasive material.Thereby abrasive material 35 is wrapped on

roll shaft

36 and 37 and is driven in rotation.

Return Fig. 6, make bearing 3 with following manner.First conductor 13 that preparation is made by aluminium foil, and form connecting hole 39 therein.The inside diameter D 3 of each connecting hole 39 is set less than the outer diameter D 1 of each photo-electric conversion element 2 and greater than the inside diameter D 2 of the opening 9 of second semiconductor layer 8 (D1＞D3＞D2).Preparation plate-shaped isolator 15 also forms connecting hole 40 therein.The inside diameter D 4 of each connecting hole 40 is set less than the inside diameter D 2 of the opening 9 of each photo-electric conversion element 2 (D2＞D4).First conductor 13 with connecting hole 39 is arranged on the isolator 15 with connecting hole 40 and is bonding with it, thereby first conductor 13 and isolator 15 become one each other.The every pair of connecting hole 39 and 40 has the common axis.Resulting structures is arranged on second conductor 14 and is bonding with it, thereby they are become one each other to make plate bearing 3a.According to another embodiment of the present invention, it is stacked on top of each other and simultaneously bonding to have first conductor 13 of connecting hole 39, the isolator 15 with connecting hole 40 and second conductor 14, thereby makes it to form as one each other.First conductor 13, second conductor 14 and isolator 15 respectively have for example thickness of 60 μ m.Peripheral part of each photo-electric conversion element 2 opening 9 is fixed in the connecting hole 39 and is relative with the connecting hole 40 of isolator 15.Alternatively, peripheral part of opening 9 can be arranged on first conductor 13 with relative with connecting hole 39.

And with reference to Fig. 1.Be positioned at Fig. 1 split shed 9 tops on the outside surface of second semiconductor layer 8 of each photo-electric conversion element 2 and around the part of opening 9, first conductor 13 that is electrically connected to bearing 3a (or 3) is positioned near the part the connecting hole 39, also is that the inner peripheral surface of connecting hole 39 or first conductor 13 are positioned near the connecting hole 39 and around the parts of connecting hole 39.The side (Fig. 1 top) that the periphery 45 that connection portion 44 (see figure 1)s that the outside surface of second semiconductor layer 8 is connected to first conductor 13 are positioned at photo-electric conversion element 2 basal surfaces that comprise opening 9 is relative with second conductor 14, thus prevent that reliably first conductor 13 is electrically connected with first semiconductor layer 7.Connection portion 44 is parallel to the basal surface of the photo-electric conversion element 2 that comprises opening 9, and than the imaginary plane 47 more close openings 9 (being than the below among Fig. 1) by photo-electric conversion element 2 centers 46.

Then, make plate bearing 3a stand plastic deformation, thereby a plurality of grooves 17 are set adjacent to each other.Second conductor 14 is deformed into the connecting hole 40 (among Fig. 6) protruding upward that makes it by isolator 15, also promptly makes it to pass connecting hole 40 and also gives prominence on it, thereby become connection portion 21.Gained bearing 3 for example can have the approximately height H 1 of 1mm.

First semiconductor layer 7 is electrically connected to the step of second conductor 14 and the step that second semiconductor layer 8 is electrically connected to first conductor 13 can (can be carried out arbitrary step earlier) in turn or carries out simultaneously.

Each photo-electric conversion element 2 that all has opening 9 is contained in the corresponding recesses 17 of formation like this.

According to another embodiment of the present invention, bearing 3 usefulness following manners are made.With the 3-tier architecture plastic deformation of first conductor 13, isolator 15 and second conductor 14 with after forming groove 17, in first conductor 13 and isolator 15,

form connecting hole

39 and 40 respectively by adopting two kinds of laser beams.

Fig. 8 is a simplified perspective view, and expression is inserted method in the corresponding recesses 17 of bearing 3 with photo-electric conversion element 2.By under by the state of absorption layer 34 vacuum suck photo-electric conversion elements 31, photo-electric conversion element 31 being cut into one group of photo-electric conversion element 2, making it opening 9 and carry down and insert in the corresponding recesses 17 of bearing 3.For example, with 100 absorption layer 34 linear arrangement.After inserting one group of photo-electric conversion element 2 in the corresponding recesses 17 by absorption layer 34, bearing 3 is moved the distance of a spacing that equals groove 17 along direction 42, and by employing absorption layer 34 another is organized photo-electric conversion element 2 with aforesaid way and insert in the new groove 17.By repeating aforesaid operations photo-electric conversion element 2 is inserted in all grooves 17.Then, carry out each photo-electric conversion element 2 is electrically connected to the operation of bearing 3 in the bottom of each groove 17.

First semiconductor layer 7 of each photo-electric conversion element 2 comes out by opening 9, and is electrically connected to connection portion 21 by the connecting hole 40 of second conductor 14.Being positioned at part on the opening 9 on second semiconductor layer, 8 outside surfaces of each photo-electric conversion element 2 is electrically connected to first conductor 13 and is positioned near the connecting hole 39 part.Can be by adopting laser beam (formation eutectic), electroconductive binder or metal rim, first semiconductor layer 7 and second semiconductor layer 8 of each photo-electric conversion element 2 is electrically connected to second conductor 14 and first conductor 13 respectively.In this way, need not to adopt solder containing pb to be electrically connected, this is preferred aspect environment protection.

Fig. 9 is a skeleton view, and how interconnection the assembly 4 and the 4b of expression photo-electric conversion element 2 and bearing 3

be.Assembly

4 and 4b are electrically connected mutually in its outward extending planar

peripheral part

61 and 61b place.

Figure 10 is

peripheral portion

61 and 61b and near the view sub-anatomy thereof of assembly 4 shown in Fig. 9 and 4b.Second conductor 14 of the bearing 3b of assembly 4b is positioned on first conductor 13 of bearing 3 of another assembly 4, is electrically connected with it and fixing with it.In this way,

assembly

4,4b ... the photoelectricity power that produces of photo-electric conversion element 2 connect mutually, thereby can export required high-voltage.

The simplified side view how Figure 11 is electrically connected mutually for

expression assembly

4,4b and 4c.The peripheral portion 61b of assembly 4b is arranged on aforesaid way on the peripheral portion 61 of assembly 4 and with it and is electrically connected.In addition, the peripheral portion 61c of assembly 4c is arranged on the peripheral portion 61b1 (being positioned at the opposite side of peripheral portion 61b) of assembly 4b and with it and is electrically connected.In the structure of Figure 11, the peripheral portion 61b of assembly 4b is positioned on the peripheral portion 61 of assembly 4, and another peripheral portion 61b1 of assembly 4b is positioned under the peripheral portion 61c of assembly 4c.In this way, each assembly is connected to each other, its mode make two peripheral portioies of each assembly lay respectively on two adjacent components and under, thereby form one two stage structure.Along the left and right directions of Figure 11, the overlapping length L 61 between peripheral portion 61 and the 61b and between peripheral portion 61b1 and the 61c can be set in for example 1mm.

Figure 12 is the sectional view of the electric connection structure of assembly 4 adjacent one another are according to another embodiment of the present invention and 4b.The peripheral portion 61 of an assembly 4 projects upwards and the peripheral portion 61b of another assembly 4b is outstanding downwards.Second conductor 14 of peripheral portion 61 is electrically connected to first conductor 13 of peripheral portion 61b.

Figure 13 be according to yet another embodiment of the invention assembly adjacent one another are 4 and the sectional view of the electric connection structure of 4b.This embodiment is similar to the embodiment of Figure 12, and itself and the latter's difference is that first conductor 13 of the peripheral portion 61 (projecting upwards) of assembly 4 is electrically connected to second conductor 14 of the peripheral portion 61b of assembly 4b (outstanding) downwards.Figure 12 and 13 syndeton can make the groove 17 of

bearing

3 and 3b more close each other, thereby groove 17 as much as possible and photo-electric conversion element 2 can be set in limited area.

Figure 14 is the part sectioned view of photo-electric conversion element 2 according to another embodiment of the present invention.Although each semiconductor layer is painted as and has even shape in Figure 14-16 (expansion along the circumferential direction), in fact semiconductor layer is that radially outside (among Figure 14-16 up) is stacked successively, thereby has spherical surface.

In the photo-electric conversion element 2 of Figure 14, radially outwards be stacked with n-type crystallite (μ c) silicon layer 63, n-type polysilicon layer 64, p-type a-SiC layer 65 and p-type crystallite SiC layer 66 (layer 64-66 constitutes a double heterojunction layer) successively.The structure that each of Figure 14-16 has the photo-electric conversion element 2 of pn knot is summarised in the table 1.

Table 1

Figure	The number mark	Layer
Figure	The number mark	Layer	??14	??66	P crystallite SiC
??65	??pa-SiC			??66	P crystallite SiC
??65	??pa-SiC	??64		The n polysilicon
??63	N crystallite-Si	??64		The n polysilicon
??63	N crystallite-Si	??15		??70	??pa-SiC
??69	??ia-SiC			??70	??pa-SiC
??69	??ia-SiC		??68	N crystallite-Si
??16	??77		??68	N crystallite-Si	P crystallite-Si
	??77	??76	??pa-SiC		P crystallite-Si
	??75	??76	??pa-SiC	??ia-SiC
	??75	??74	??ia-Si	??ia-SiC
	??73	??74	??ia-Si	N crystallite-Si

Figure 15 is the part sectioned view of photo-electric conversion element 2 according to yet another embodiment of the invention.The details of semiconductor layer 68-70 is as shown in table 1.Alternatively, in the photo-electric conversion element 2 of Figure 15, semiconductor layer 68 can be made by n-type silicon single crystal or polysilicon.

Figure 16 is the part sectioned view of photo-electric conversion element 2 according to yet another embodiment of the invention.The details of semiconductor layer 73-77 is as shown in table 1.Alternatively, the semiconductor layer among Figure 16 73 and 74 can be made by n-type silicon single crystal.Semiconductor layer 74 also can be made by i-type microcrystal silicon.

In the present invention, photo-electric conversion element 2 also can have and above-mentioned different structure.

According to another embodiment of the present invention, bearing 3 can be substituted by the bearing of the another kind of type of following making, by molded (for example injection molding) for example insulating synthetic resin material (for example polycarbonate) form a structure with groove, then in its surface the coating electrically conductive material for example Ni to form first and second conductors.This first and second conductor can be made by for example aluminium foil.Alternatively, they can form by coating Cr or coating Ag.As further substituting, they can wait and form by evaporation plating or sputter metallizing Ni, Cr, Al, Ag.On first conductor, can form one deck tectum, and this tectum can be made by metal (forming) or synthetic resins by modes such as plating.

Figure 17 represents the one-piece construction of spherical semiconductor grain extensive capital equipment according to a further aspect of the present invention with simplified way.Figure 18 is the operation workflow figure of the equipment of Figure 17.The spherical semiconductor grain of being made by silicon for mass production is to be used to make optoelectronic device etc., and at first silicon partly being led not, raw material adds top hopper 201.The inside of hopper 201 always remains under the normal pressure, and raw material offers middle hopper 203 from hopper 201 through close/open valve 202.The inside of middle hopper 203 remains under the normal pressure when it accepts raw material, and remains under the operating air pressure when it is supplied raw materials.Raw material offers bottom hopper 205 from middle hopper 203 by close/open valve 204.The inside of bottom hopper 205 always remains under the operating air pressure.Solid-state raw material rests in the bottom hopper 205.In this way, the step s1 in Figure 18 provides the particulate Si raw semiconductor to top hopper 201.At step s2,, under the state that external pressure is shielded, raw material is provided to bottom hopper 205 via middle hopper 203 from top hopper 201 with constant speed by the effect of close/open valve 202 and 204.

At step s3, in solid-state preliminary heating section 206, to being provided, the raw material from bottom hopper 205 preheats by high-frequency induction heating.According to another embodiment of the present invention, substitute high-frequency induction heating, in reverberatory furnace, electronic oven etc., carry out radiation heating.

At step s4, thereby in melt portions 207, pre-warmed raw material in solid-state preliminary heating section 206 is heated fusing.In melt portions 207, raw material can be as being melted by high-frequency induction heating in solid-state preliminary heating section 206.According to another embodiment of the present invention, raw material is by carrying out radiation heating and heat and melting with reverberatory furnace, electronic oven etc.Melt portions 207 is provided with a crucible 208, and fused semiconductor is stored in the crucible 208 temporarily.Fused semiconductor in the crucible 208 is pressurizeed by the operating air pressure of space generation above it, vibrates (step s4a) simultaneously.The bottom of crucible 208 is provided with a plurality of nozzles 209, with fused semiconductor by with constant flow rate drippage, the air pressure that flow velocity produces corresponding to fused semiconductor superjacent air space in crucible 208.Alternatively, be provided with single-nozzle 209 in the bottom of crucible 208.

Figure 19 represents to be used for fused semiconductor is provided to nozzle 209 and with its structure from nozzle 209 drippages from crucible 208 with simplified way.In melt portions 207, pressurizing device 211 usefulness rare gas elementes are Ar gas or the N2 gas generation of the space above fused semiconductor air pressure in crucible 208 for example.Thereby the semi-conductor in the crucible 208 is as mentioned above by heating unit 212 heating fusings.Vibrated by vibrating device 213 from the fused semiconductor stream of nozzle 209 drippages.

Figure 20 is the simplified cross-sectional view of melt portions 207.Comprise source of the gas 214, pressurizing device 211 provides rare gas element in the space of fused semiconductor top to the crucible 208.For heat by induction heating and fusion crucible 208 in semi-conductor, from high frequency electric source 215 for example 200 to 500KHz high-frequency energy provide to load coil 216 around crucible 208.In this way, the semi-conductor in the crucible 208 is carried out induction heating.For example make by carbon or graphite by the refractory electro-conductive material for crucible 208.Each nozzle 209 has the length of internal diameter and the 1mm to 100mm (being preferably 5mm to 10mm) of 1 ± 0.5mm.In this way, can be with fused semiconductor with flow velocity corresponding to the air pressure that produces at the fused semiconductor superjacent air space by source of the gas 214, for example set constant flow rate is from nozzle 209 drippages.The air pressure in the space 217 that the jet exit 218 of each nozzle 209 communicates with it is normal atmosphere.

According to another embodiment of the present invention, substitute by source of the gas 214 and produce air pressure at the fused semiconductor superjacent air space, space in crucible 208 above the fused semiconductor is set at normal atmosphere, and the air pressure in the space 217 that the jet exit 218 of each nozzle 209 is communicated is with it set the air pressure that is lower than fused semiconductor superjacent air space in the crucible 208 for.Semi-conductor in the crucible 208 can heat by the resistive heating device with electric heater and melt, and electric heater is fixed on the crucible 208 or is located near it.

Receive from 10Hz to the 1KHz sound wave of vibrating device 213 from the fused semiconductor stream of nozzle 209 drippage and to be vibrated.Alternatively, vibrational frequency can be at ultrasonic wave range.

Figure 21 represents from the fused semiconductor of jet exit 218 drippages of each nozzle 209 be how to form spheroidal particle.Is successive from the fused semiconductor of jet exit 218 drippages at vertical direction.Yet, along with fused semiconductor further drips, the oscillating action that it is subjected to vibrating device 213 at hard Nogata to being divided into particle.

Figure 22 A-22D represents the analog result of being undertaken by the inventor, and the cubes fused semiconductor particle that shows drippage is how to change its shape to become spheric.Figure 22 A represents an isolating fused semiconductor particle after nozzle 209 drippages.This fused semiconductor particle becomes round gradually, shown in Figure 22 B and 22C, and finally is approximate complete sphere, shown in Figure 22 D.

According to another embodiment of the present invention, drive each nozzle 209, make jet exit 218 along direction (promptly along left and right directions among Figure 19-21) vibration, and the side-to-side vibrations amplitude A of each nozzle 218 is set at less than waiting to make 1/2 of particle diameter D1 perpendicular to its axis.This method can also be produced the particle with accurate diameter D1.According to still a further embodiment, each nozzle 209 is along the vibration of its axis, also i.e. above-below direction vibration in Figure 19-21.Nozzle 209 can be an inflexible or elastic.

Return Figure 17 and 18, its shape of fused semiconductor stream change of dripping from nozzle 209 becomes sphere.Along with particle passes through cooling drum 221, its steradian improves and its surface becomes more bright and clean.In cooling drum 221, cool off control (step s6 among Figure 18).At step s7, chilled particle is classified; For example, only select the particle of its diameter D1 in 1 ± 0.5mm scope.At step s8, the laser beam 223 that sends with self-excitation light source 222 shines selected particle.Specifically, at step s8, the solid granulates that drips from nozzle 209 shines gas phase with laser beam 223, thereby is heated and fusing once more.As a result, each particle becomes monocrystalline or polycrystalline, and it is noncrystal to prevent from simultaneously to crack in its surface and prevent that particle from becoming.Laser source 222 is used to make the particle crystallization and constitutes crystallization apparatus 224.So the crystalline particle at step s9 by subseries again; Only select the particle of its diameter D1 in above-mentioned 1 ± 0.5mm scope, and it is directed to upper layer formation device 225.At step s10, carry out the upper layer punishment.Specifically, form in the device 225 at upper layer, make the monocrystalline or the poly semiconductor particle of a kind of conductivity type (for example p-type) pass through a passage, the diffuse source that in this passage, has form in the gas phase, contain adulterated atom of particle surface layer needs or molecule in the diffuse source, thereby form the upper layer of another kind of conductivity type (for example n-type).Passage vertically extends, and follows particle to pass through this passage and falls to taking place the upper layer diffusion.Diffuse source can be p2O5, POC13, PH3 etc.In this way, form upper layer by the gas phase diffusion method.According to another embodiment of the present invention, its surface is heated by the particle that passage is deposited with diffusion material once more with it, have the upper layer of desired thickness with formation; Upper layer forms by the solid-state diffusion method.Upper layer also can form by vacuum evaporation coating.

The particle that has been formed with upper layer is subjected to cooling (step s11) in cooling drum 227.In this way, its steradian is improved and upper layer is controlled remaining on required state, thus the photo-electric conversion element that obtains not have crackle etc. and have good steradian and surface shape at step s12.

Figure 23 A and 23B are the sectional view of semiconductor grain according to another embodiment of the present invention.Have been found that, particle (seeing Figure 23 A) by the acquisition of crushing silicon semiconductor, when particle falls in gas phase, use the 20W laser beam 223 that sends from YAG laser source 222 that its irradiation 10ms is heated and melt particle, can make it to change over the spheroidal particle shown in Figure 23 B.The particle of Xing Chenging has the more crystalline degree in this way.

Figure 24 is the simplified cross-sectional view of vibrating device 228 according to another embodiment of the present invention.This vibrating device 228 has the tympanum 229 and the drive source 231 that communicate with the space of semi-conductor top in the crucible 208, is used for making tympanum 229 to-and-fro movements along the vertical direction of Figure 24.Drive source 231 can have a motor and by motor-driven crank mechanism.Along with tympanum 229 moves along the vertical direction among Figure 24, the pressure cycle that acts on the space 233 of fused semiconductor 232 tops sexually revises to realize vibration.

Figure 25 is the simplified cross-sectional view of vibrating device 234 according to yet another embodiment of the invention.Actuator chamber 236 links to each other with the space 233 of semi-conductor 232 tops in the crucible 208 by pipeline 235.The volume of drive source 237 periodic variation actuator chambers 236, thus its internal pressure and air pressure changed.In this way, the air pressure in space 233 can be changed, thereby fused semiconductor 232 vibrations can be made.

Figure 26 forms the sectional view of the concrete structure of device 225 for upper layer.Form device 225 usefulness aforesaid ways by upper layer and form upper layer by crystallization apparatus 224 crystallizations and solidified particle.In this embodiment, the silicon spheroid forms surface diffusion layer by the gaseous diffusion method.The following describes the exemplary methods that each p-type silicon spheroid is formed shallow n-type diffusion layer.Diffuse source is P2O5, POCl3, PH3 etc.At first, the rare gas element that will contain diffuse source and small quantity of hydrogen imports diffusion layer and forms space 239, and it is adjacent with the laser beam irradiation space and isolate with the latter in atmosphere side that diffusion layer forms space 239, and diffusion layer formation space 239 is full of rare gas element.Diffusion layer forms space 239 and accounts for about 5m at vertical direction, and the temperature of its top 241 and bottom 242 is set in about 1,400 ℃ and about 1,350 ℃ respectively.Carrying out high quality by laser beam irradiation once more after the crystallization, p-type silicon spheroid 241 forms space 239 to bottom 242 by diffusion layer from the top, keeps high temperature simultaneously.P-type silicon spheroid forms space 239 by diffusion layer and takes about 1 second.Along with p-type silicon spheroid forms space 239 by diffusion layer, its each be formed with the n-type diffusion layer of the about 0.5 μ m of the degree of depth on its whole surface, this is essential for each silicon spheroid as solar cell.By continuous importing rare gas element and suitably the control diffusion layer form the atmosphere in space 239, can carry out this step continuously, thereby make on a large amount of each, all be formed with the silicon spheroid of upper layer.

Figure 27 represents the structure of upper layer formation device 238 according to another embodiment of the present invention with simplified way.In this embodiment, diffusion layer forms space 243 and is similar to above-mentioned diffusion layer formation space 239, and its temperature is set in about 1,200 ℃.Make p-type silicon spheroid 244 form space 243 to bottom 245 from the top with above-mentioned same way as by diffusion layer with about 1 second.Along with the silicon spheroid forms space 243 by diffusion layer, be formed with the shallow n-type diffusion layer of the about 0.1 μ m of the degree of depth on its whole surface.Then, resulting a large amount of silicon spheroids are added in the container of being made by quartz etc. 246,, thereby obtain required n-type diffusion layer then 900 ℃ to 1,000 ℃ thermal treatments approximately tens of minutes once more.

The relevant experimental result of particulate is made in the fusing of passing through in having the crucible of nozzle that the following describes that the inventor carries out.

The equipment that is used to test: high-frequency heating apparatus, model name YKN-5 (making) by Nippon Koshuha company limited

High frequency output rating: 5kW

Essential power supply: 3 phase 200V, 11kVA

Vibrational frequency: about 400kHz

Size: wide 600mm * high by 1,170mm * dark 700mm

Weight: about 250kg

Method of cooling: air cooling

Example 1

The silicon materials of about 1.5ml are added in the plumbago crucible.This plumbago crucible has the external diameter of 20mm, the outer length of 40mm, and its volume represented by internal diameter 10mm and length 35mm, and is contained in the airtight and adiabatic container of pottery, container one end has the nozzle of an internal diameter 1mm and length 5mm.Carrying out before particle makes at once, about 20 minutes of the high-frequency induction power that applies 4.6kW with the stable particle manufacturing conditions such as temperature.The nitrogen pressure that applies about 300Pa begins particle makes, thereby makes the silicon spheroid with the about 1mm of mean diameter.For reduce between silicon and the graphite level of response and because there is the degree cause graphite burning in oxygen, when beginning to apply high-frequency induction power, keep the nitrogen pressure of about 100Pa in the system of flow velocity vanishing therein, to stop the cooling phenomenon of this moment.In order to reduce because the degree that the nozzle temperature that causes of thermal radiation reduces, the temperature retaining part of an about 10mm of length by after take a sample.

Example 2

The silicon materials of about 1.5ml are added in the plumbago crucible.This plumbago crucible has the external diameter of 20mm, the outer length of 40mm, and its volume represented by internal diameter 10mm and length 30mm, and is contained in the airtight and adiabatic container of pottery, container one end has the nozzle of an internal diameter 1mm and length 10mm.Carrying out before particle makes at once, about 15 minutes of the high-frequency induction power that applies 4.6kW with the stable particle manufacturing conditions such as temperature.The nitrogen pressure that applies about 500Pa begins particle makes, thereby makes the silicon spheroid with the about 1mm of mean diameter.For reduce between silicon and the graphite level of response and because there is the degree cause graphite burning in oxygen, when beginning to apply high-frequency induction power, keep the nitrogen pressure of about 100Pa in the system of flow velocity vanishing therein, to stop the cooling phenomenon of this moment.In order to reduce because the degree that the nozzle temperature that causes of thermal radiation reduces, the temperature retaining part of an about 10mm of length by after take a sample.

Example 3

The silicon materials of about 1.2ml are added in the plumbago crucible.This plumbago crucible has the external diameter of 20mm, the outer length of 40mm, and its volume represented by internal diameter 10mm and length 25mm, and is contained in the airtight and adiabatic container of pottery, container one end has the nozzle of an internal diameter 1mm and length 10mm.Carrying out before particle makes at once, about 20 minutes of the high-frequency induction power that applies 3.6kW with the stable particle manufacturing conditions such as temperature.The nitrogen pressure that applies about 300Pa begins particle makes, thereby makes the silicon spheroid with the about 1mm of mean diameter.For reduce between silicon and the graphite level of response and because there is the degree cause graphite burning in oxygen, when beginning to apply high-frequency induction power, keep the nitrogen pressure of about 100Pa in the system of flow velocity vanishing therein, to stop the cooling phenomenon of this moment.In order to reduce because the degree that the nozzle temperature that causes of thermal radiation reduces, the temperature retaining part of an about 20mm of length by after take a sample.The reason that the high-frequency induction power that is applied is lower than in the example 2 is, is used for gas pressurization and reduced thermal radiation by fix a graphite cover with 1mm inner diameter hole on the plumbago crucible of internal diameter 10mm and length 25mm at the other end of nozzle.

Example 4

The silicon materials of about 1.2ml are added in the plumbago crucible.This plumbago crucible has the external diameter of 20mm, the outer length of 40mm, and its volume represented by internal diameter 10mm and length 25mm, and is contained in the airtight and adiabatic container of pottery, container one end has the nozzle of an internal diameter 1mm and length 10mm.Carrying out before particle makes at once, apply about 20 minutes of high-frequency induction power 3.6kW with the stable particle manufacturing conditions such as temperature.The nitrogen pressure that applies about 200Pa begins particle makes, thereby makes the silicon spheroid with the about 1mm of mean diameter.For reduce between silicon and the graphite level of response and because there is the degree cause graphite burning in oxygen, when beginning to apply high-frequency induction power, keep the nitrogen pressure of about 100Pa in the system of flow velocity vanishing therein, to stop the cooling phenomenon of this moment.In order to reduce because the degree that the nozzle temperature that causes of thermal radiation reduces, the temperature retaining part of an about 20mm of length by after take a sample.The reason that nitrogen pressure is lower than in the example 3 is to discharge the vibration that direction is applied with frequency 30Hz and the about 0.1mm of stroke along nozzle.Apply vibration to obtain more sharp-pointed particle diameter distribution.When applying vibration under the discharge condition at particle diameter 1mm, the diameter of output spheroid becomes less than 1mm.

The following describes the relevant experimental result of melting crystal that the inventor carries out.

The equipment that is used to test: superpower, high-speed pulse YAG laser-beam welding machine, model ML-2650A (making) by Miyachi Technos company limited

Maximum rated output rating: 500W

Maximum output energy: 70J/ pulse (pulse width: 10m/s)

Pulse width: 0.5ms to 30.0ms (step-length: 0.1ms)

Pulse-repetition frequency: 1pps to 500pps

Resonance wavelength: 1.064 μ m

Example 5

The ore crushing silicon materials of volume corresponding to the 1mm diameter sphere are added in the conical bore of quartz plate.With the laser beam irradiation silicon materials 30ms of 50W, thus the silicon metal spheroid of the about 1mm of acquisition diameter.

Example 6

The spherical amorphous silicon material of volume corresponding to the 1mm diameter sphere added in the conical bore of quartz plate.With the laser beam irradiation silicon materials 30ms of 50W, thus the silicon metal spheroid of the about 1mm of acquisition diameter.

Example 7

The spherical amorphous silicon material adding of volume corresponding to the 1mm diameter sphere had in the silica tube of 2.5mm internal diameter.With the laser beam irradiation silicon materials 30ms of 50W, thus the silicon metal spheroid of the about 1mm of acquisition diameter.

Example 8

The spherical amorphous silicon material of volume corresponding to the 1mm diameter sphere sticked on the filament with tackiness agent.With the laser beam irradiation silicon materials 10ms of 36W, thus the silicon metal spheroid of the about 1mm of acquisition diameter.

Each laser beam irradiation carries out as follows, and promptly making laser beam irradiation by watch-dog is being the border circular areas of center, the about 0.6mm of diameter with irradiation target center of gravity corresponding points.After cooling off the circle letter, taking a sample.

In this specification sheets, term " pin knot " comprises following structure, and n, i and p-type semiconductor layer inwardly or outwards are formed on the photo-electric conversion element 2 of almost spherical with described order with arranging.

The spherical semiconductor grain of making according to the present invention is a photo-electric conversion element 2.Above-mentioned optoelectronic device can be constructed with the photo-electric conversion element 2 of making like this.

The present invention can be implemented and can not be departed from its spirit or principal character with other specific form.Thereby described each embodiment to should be understood to all be exemplary and nonrestrictive in all respects, scope of the present invention is provided rather than is provided by above stated specification by each appended claim, and therefore being in the implication of claim equivalent and all changes in the scope all should comprise in the present invention.

Claims

1. the batch manufacturing method of a spherical semiconductor grain comprises:

Storing semiconductor in crucible;

By the semi-conductor in heating unit heating and the fusion crucible;

Fused semiconductor from crucible is dripped from nozzle; With

By described fused semiconductor in the vibrating device vibration crucible or the fused semiconductor that in gas phase, drips.

2. the batch manufacturing method of spherical semiconductor grain as claimed in claim 1 is characterized in that this method further comprises:

By pressurizing device fused semiconductor in the crucible is pressurizeed.

3. the batch manufacturing method of spherical semiconductor grain as claimed in claim 2 is characterized in that described pressurizing device is a source of the gas, and being used for that air pressure is higher than atmospheric rare gas element provides to the space of crucible semi-conductor top.

4. the batch manufacturing method of spherical semiconductor grain as claimed in claim 1 is characterized in that the spatial air pressure that will communicate with jet exit is chosen as the air pressure that is lower than semi-conductor superjacent air space in the crucible.

5. the batch manufacturing method of spherical semiconductor grain as claimed in claim 1 is characterized in that being provided with a plurality of nozzles, and each nozzle has the length of internal diameter and the 1mm to 100mm of 1 ± 0.5mm.

6. the batch manufacturing method of spherical semiconductor grain as claimed in claim 5 is characterized in that each nozzle has the length of 5mm to 10mm.

7. the batch manufacturing method of spherical semiconductor grain as claimed in claim 1 is characterized in that described heating unit comprises the high frequency electric source that is located near the load coil of crucible and is used to encourage load coil.

8. the batch manufacturing method of spherical semiconductor grain as claimed in claim 1 is characterized in that described heating unit is the resistive heating device that is used for heating crucible.

9. the batch manufacturing method of spherical semiconductor grain as claimed in claim 1 is characterized in that described vibrating device has the vibrational frequency of 10Hz to 1kHz.

10. the batch manufacturing method of spherical semiconductor grain as claimed in claim 1 is characterized in that described vibrating device applies sound wave or ultrasonic wave to the fused semiconductor that is dripping, thus the fused semiconductor that vibration is being dripped.

11. the batch manufacturing method of spherical semiconductor grain as claimed in claim 1 it is characterized in that described nozzle vibrates, and described vibrating device comes vibrating nozzle by to-and-fro movement.

12. the batch manufacturing method of spherical semiconductor grain as claimed in claim 11 is characterized in that described vibrating device drives nozzle, makes jet exit along the direction vibration perpendicular to nozzle axis, its Oscillation Amplitude A is less than waiting to make 1/2 of particle outer diameter D 1.

13. the batch manufacturing method of spherical semiconductor grain as claimed in claim 11 is characterized in that the axis direction vibrating nozzle of described vibrating device along nozzle.

14. the batch manufacturing method of spherical semiconductor grain as claimed in claim 1 is characterized in that described vibrating device is the air pressure modifier that is used for changing the air pressure of crucible semi-conductor superjacent air space.

15. the batch manufacturing method of spherical semiconductor grain as claimed in claim 14 is characterized in that described vibrating device comprises:

Tympanum, its be arranged to communicate with the space of semi-conductor top in the crucible and

Drive source is used to make described tympanum to-and-fro movement.

16. the batch manufacturing method of spherical semiconductor grain as claimed in claim 14 is characterized in that described vibrating device comprises:

Actuator chamber, its link to each other with the space of semi-conductor top in the crucible and

Drive source is used to make the air pressure vibration in the described actuator chamber.

17. the batch manufacturing method of spherical semiconductor grain as claimed in claim 1 is characterized in that described vibrating device makes the crucible vibration.

18. the batch manufacturing method of spherical semiconductor grain as claimed in claim 1 is characterized in that this method further comprises:

Apply Lorentz force by the Lorentz force generation device to fused semiconductor, thereby form particle by the clamping action that reduces the fused semiconductor cross section from the nozzle drippage.

19. the batch manufacturing method of spherical semiconductor grain as claimed in claim 1 is characterized in that this method comprises:

In gas phase to heating from the liquid state of nozzle drippage or solid granulates controlling its speed of cooling, thereby described particle is transformed into monocrystalline or polycrystalline particle.

20. the batch manufacturing method of spherical semiconductor grain as claimed in claim 19 is characterized in that this method comprises:

The crystal semiconductor particle that makes a kind of conductivity type contains adulterated atom of crystal semiconductor particle needs or molecule by the passage in the material gas in this material gas, thereby forms the upper layer of another kind of conductivity type on each crystal semiconductor particle.

21. the batch manufacturing method of a spherical semiconductor grain comprises:

Crystallisation step is used for by crystallization apparatus liquid state or the solid granulates that is present in gas phase being heated, thereby described particle is transformed into monocrystalline or polycrystalline particle.

22. as the batch manufacturing method of claim 19 or 21 described spherical semiconductor grains, it is characterized in that described crystallization apparatus is a laser source, be used for to described particle irradiating laser.

23., it is characterized in that described crystallization apparatus is a radiant heat source as the batch manufacturing method of claim 19 or 21 described spherical semiconductor grains, be located at and particle path position adjacent, be used for by the radiant heat heated particle.

24. spherical semiconductor grain batch manufacturing method as claimed in claim 22, wherein said crystallization apparatus heated particle makes the particulate speed of cooling have a gentle distribution, thereby prevention cracks in particle and it is noncrystal to stop particle to become.

25. the batch manufacturing method of a spherical semiconductor grain, it is characterized in that making a kind of crystal semiconductor particle of conductivity type by the passage in the material gas, contain adulterated atom of crystal semiconductor particle needs or molecule in this material gas, thereby on each crystal semiconductor particle, form the upper layer of another kind of conductivity type.

26. the batch manufacturing method of spherical semiconductor grain as claimed in claim 20 is characterized in that described passage vertically extends, and carries out the upper layer diffusion when the crystal semiconductor particle falls by this passage.

27. the batch manufacturing method of spherical semiconductor grain as claimed in claim 26 is characterized in that having the upper layer of desired thickness with formation thereon to by the crystal semiconductor particle that is deposited with diffusant is heated.

28. the batch manufacturing method of spherical semiconductor grain as claimed in claim 20 is characterized in that described semi-conductor is a silicon.

29, a kind of batch process equipment of spherical semiconductor grain comprises:

Crucible is used for storing semiconductor;

Heating unit is used for heating the also semi-conductor of fusion crucible;

Nozzle is used for the fused semiconductor drippage from crucible; With

Vibrating device is used to vibrate described fused semiconductor, and the fused semiconductor that will drip in gas phase is transformed into the spheroidal particle with single-size diameter.

30, a kind of batch process equipment of spherical semiconductor grain comprises:

Crystallization apparatus is used for the liquid state or the solid granulates that are present in gas phase are heated, thereby described particle is transformed into monocrystalline or polycrystalline particle.

31, a kind of batch process equipment of spherical semiconductor grain comprises:

Dispersion device, be used for making the passage of a kind of crystal semiconductor particle of conductivity type by a material gas, contain adulterated atom of crystal semiconductor particle needs or molecule in this material gas, thereby on each crystal semiconductor particle, form the upper layer of another kind of conductivity type.