CN1706984A - Silicon nitride layer forming process - Google Patents
Silicon nitride layer forming process Download PDFInfo
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- CN1706984A CN1706984A CN 200410042967 CN200410042967A CN1706984A CN 1706984 A CN1706984 A CN 1706984A CN 200410042967 CN200410042967 CN 200410042967 CN 200410042967 A CN200410042967 A CN 200410042967A CN 1706984 A CN1706984 A CN 1706984A
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Abstract
The silicon nitride layer forming process has one depositing furnace tube provided, and the depositing furnace tube includes outer tube, crystal boat, gas injector and gas homogenizing injector. The crystal boat configured inside the outer tube is for bearing wafers; the gas injector is located between the outer tube and the crystal boat; and the gas homogenizing injector located between the outer tube and the crystal boat outputs gas homogeneously distributed inside the depositing furnace tube. When silicon containing gas is fed through the gas injector into the depositing furnace tube, nitrogen containing gas with mixed carrier gas is fed through the gas homogenizing injector into the depositing furnace tube so as to form deposited silicon nitride layer on the surface of wafers.
Description
Technical field
The present invention relates to a kind of formation method of film, particularly relate to a kind of utilization and have the formation method of the deposition boiler tube of microporous air injector with the silicon nitride layer of formation silicon nitride layer.
Background technology
Forming film on wafer has many modes of taking, wherein a kind of method be for chemical Vapor deposition process (Chemical Vapor Deposition, CVD).Chemical vapour deposition is that reactant gases is delivered in the High Temperature Furnaces Heating Apparatus, and makes reactant gases produce chemical reaction with placing the wafer in the stove, to deposit thin film at crystal column surface.The employed deposition boiler tube of chemical vapor deposition process includes horizontal deposition boiler tube and vertical type deposition boiler tube.Wherein the reactor of vertical type deposition boiler tube is to dispose in axial mode, and because its required overall volume is less, therefore the trend of substitution level formula deposition boiler tube is gradually arranged in the use.
With the deposition of silicon nitride layer, when utilizing the vertical type deposition boiler tube to carry out, dichlorosilane (Dichlorosilane, SiH
2Cl
2), ammonia (NH
3) wait reactant gases to enter in the deposition boiler tube respectively by the bottom of gas injection tube from deposition boiler tube, and common produce chemical reaction, with at crystal column surface formation silicon nitride layer with each wafer that is placed on the brilliant boat (Boat).Yet, because these reactant gasess are only can enter deposition boiler tube from the bottom of deposition boiler tube, so reactant gases, particularly react the lower reactant gases of required ratio, can't fully arrive the top of deposition boiler tube, and cause the deposition uniformity between each wafer on the brilliant boat not good.With the silicon nitride layer in the MEMS (micro electro mechanical system) (MEMS), depositing the required reactant gases of this silicon nitride layer generally is to be dichlorosilane and ammonia, and because MEMS (micro electro mechanical system) (MEMS) has the demand of low-stress for silicon nitride layer, therefore the flow of employed dichlorosilane generally can be greater than the flow of ammonia, to form many silicon silicon nitride layer.But, in the process of deposited silicon nitride layer, because the less ammonia of flow can't fully arrive the top of deposition boiler tube, therefore can make between each wafer on the brilliant boat silicon nitride layer on it, deposition uniformity is not good.In other words, even each position on the brilliant boat all is placed with wafer, the wafer that still only is positioned at brilliant boat subregion just can form the silicon nitride layer of low-stress, so the output of the wafer of primary depositing processing procedure can be affected.
On the other hand, in MEMS (micro electro mechanical system) (MEMS), because the thickness of the silicon nitride layer of required formation is generally all between 7000 dust to 10000 dusts, the silicon nitride layer in the general element is thick.Therefore in micro-electro-mechanical systems element, if can't form the silicon nitride layer of low-stress, the silicon nitride layer in the general element with easier peeling off, and then causes the problem of component failure.For instance, a little integrated circuit component that is positioned on the ink gun, it is to draw ink in the ink cartridges by siphonage.Yet if this is the integrated circuit component of chamber wall with the silicon nitride layer, its silicon nitride layer stress is excessive and when peeling off, can make integrated circuit component can't draw ink again, and the problem that causes ink gun to re-use.Therefore, for micro-electro-mechanical systems element, its requirement for low-stress more is far more than general element.But thus, the wafer count that can reach the low-stress standard of MEMS (micro electro mechanical system) in brilliant boat will more reduce, thus volume production micro-electro-mechanical systems element difficulty more.
This shows that the formation method of above-mentioned existing silicon nitride layer obviously still has inconvenience and defective, and demands urgently further being improved in formation method and use.The problem that exists for the formation method that solves silicon nitride layer, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and general method does not have appropriate formation method to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that the formation method of above-mentioned existing silicon nitride layer exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and expertise thereof, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of formation method of new silicon nitride layer, can improve the formation method of general existing silicon nitride layer, make it have more practicality.Through constantly research, design, and after studying repeatedly and improving, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective of the formation method existence of existing silicon nitride layer, and provide a kind of formation method of new silicon nitride layer, technical problem to be solved is that it can be solved in the processing procedure of micro-electro-mechanical systems element, the problem that the wafer volume production is difficult for, thereby be suitable for practicality more, and have the utility value on the industry.
Another object of the present invention is to, a kind of formation method of silicon nitride layer is provided, technical problem to be solved is to make it can solve existing prior art method on a brilliant boat, the problem that the deposition uniformity between each wafer is not good, thus be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.The formation method of a kind of silicon nitride layer that proposes according to the present invention is applicable to the processing procedure of MEMS (micro electro mechanical system) (MEMS) element, and may further comprise the steps: a deposition boiler tube is provided, and this deposition boiler tube comprises: an outer tube; One brilliant boat is configured in the inside of this outer tube, in order to carry most wafers; One air injector is between this outer tube and this crystalline substance boat; And the even injection device of a gas, between this outer tube and this crystalline substance boat, and the gas of being exported by the even injection device of this gas can be uniformly distributed in this deposition boiler tube; And a silicon containing gas body source is delivered in this deposition boiler tube by this air injector, and a nitrogenous gas source that will be mixed with a carrier gas is delivered in the deposition boiler tube by the even injection device of this gas, to deposit a silicon nitride layer at those crystal column surfaces, wherein the flow of this silicon containing gas body source is the flow greater than the nitrogenous gas source.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The formation method of aforesaid silicon nitride layer, wherein said air injector comprise a microporous air injector, and this microporous air injector is along the bearing of trend extension of this crystalline substance boat.
The formation method of aforesaid silicon nitride layer, the even injection device of wherein said gas comprises a microporous air injector, and this microporous air injector is along the bearing of trend extension of this crystalline substance boat.
The formation method of aforesaid silicon nitride layer, wherein said microporous air injector has the gas delivery outlet more than 5.
The formation method of aforesaid silicon nitride layer, the throughput ratio in wherein said silicon containing gas body source and this nitrogenous gas source is at least greater than 3: 1.
The formation method of aforesaid silicon nitride layer, wherein said silicon containing gas body source comprises dichlorosilane (Dichlorosilane, SiH
2Cl
2).
The formation method of aforesaid silicon nitride layer, wherein said nitrogenous gas source comprises ammonia (NH
3).
The formation method of aforesaid silicon nitride layer, the blending ratio in wherein said carrier gas and this nitrogenous gas source is between 1: 1 to 10: 1.
The formation method of aforesaid silicon nitride layer, wherein said carrier gas comprises nitrogen.
The formation method of aforesaid silicon nitride layer, wherein in the process that forms this silicon nitride layer, the pressure in this deposition boiler tube is between between the 0.1torr to 1torr.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.The formation method of a kind of silicon nitride layer that proposes according to the present invention, it may further comprise the steps: a deposition boiler tube is provided, and this deposition boiler tube comprises: an outer tube; One brilliant boat is configured in the inside of this outer tube, in order to carry most wafers; One air injector is between this outer tube and this crystalline substance boat; And the even injection device of a gas, between this outer tube and this crystalline substance boat, and the gas of being exported by the even injection device of this gas can be uniformly distributed in this deposition boiler tube; And one first reacting gas source is delivered in this deposition boiler tube by this air injector, and one second reacting gas source is delivered in this deposition boiler tube by the even injection device of this gas, to deposit a silicon nitride layer at those crystal column surfaces, wherein the flow of this first reacting gas source is the flow greater than this second reacting gas source.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The formation method of aforesaid silicon nitride layer, wherein said air injector comprise a microporous air injector, and this microporous air injector is along the bearing of trend extension of this crystalline substance boat.
The formation method of aforesaid silicon nitride layer, the even injection device of wherein said gas comprises a microporous air injector, and this microporous air injector is along the bearing of trend extension of this crystalline substance boat.
The formation method of aforesaid silicon nitride layer, wherein said microporous air injector has the gas delivery outlet more than 5.
The formation method of aforesaid silicon nitride layer, wherein said first reacting gas source be for a silicon containing gas body source and a nitrogenous gas source one of them, and this second reacting gas source is to be wherein another.
The formation method of aforesaid silicon nitride layer, wherein said silicon containing gas body source comprises dichlorosilane.
The formation method of aforesaid silicon nitride layer, wherein said nitrogenous gas source comprises ammonia.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of formation method of silicon nitride layer, this formation method is applicable to the processing procedure of micro-electro-mechanical systems element, this formation method is that a deposition boiler tube (Deposition Furnace) is provided earlier, and this deposition boiler tube comprises an outer tube (Outer Tube), a brilliant boat (Boat), an air injector (GasInjector) and the even injection device of a gas (Gas Uniform Injection Apparatus).Wherein brilliant boat is configured in outer tube inside, in order to carry most wafers.In addition, air injector is between outer tube and brilliant boat.In addition, the even injection device of gas is between outer tube and brilliant boat, and the gas exported of the even injection device of gas can be evenly distributed in the deposition boiler tube thus.Wherein the even injection device of this gas for example is the bearing of trend extension of microporous air injector (Multi-Apertures Gas Injector) along brilliant boat.Then, the silicon containing gas body source is delivered in the deposition boiler tube by air injector, and the nitrogenous gas source that will be mixed with carrier gas is delivered in the deposition boiler tube by the even injection device of gas, with in the crystal column surface deposited silicon nitride layer, the flow of wherein above-mentioned silicon containing gas body source is the flow greater than the nitrogenous gas source.
In above-mentioned processing procedure, because the even injection device of this gas can make the less nitrogenous gas source of flow be uniformly distributed in the deposition boiler tube.Therefore when deposited silicon nitride layer, each the regional silicon containing gas body source in the deposition boiler tube and the blending ratio in nitrogenous gas source are to have consistence.So it is thicker that each crystal column surface that can be in brilliant boat forms thickness, and the lower silicon nitride layer of stress, to meet the demand of micro-electro-mechanical systems element.
The present invention proposes the formation method of another kind of silicon nitride layer, and this formation method is that a deposition boiler tube is provided earlier, and this deposition boiler tube comprises an outer tube, a brilliant boat, an air injector and the even injection device of a gas.Wherein brilliant boat is configured in outer tube inside, in order to carry most wafers.In addition, air injector is between outer tube and brilliant boat.In addition, the even injection device of gas is between outer tube and brilliant boat, and the gas exported of the even injection device of gas can be evenly distributed in the deposition boiler tube thus.Wherein the even injection device of this gas for example is the microporous air injector, along the bearing of trend extension of brilliant boat.Then, first reacting gas source is delivered in the deposition boiler tube by air injector, and second reacting gas source is delivered in the deposition boiler tube by the even injection device of gas, with in the crystal column surface deposited silicon nitride layer, the flow of the first wherein above-mentioned reacting gas source is the flow greater than second reacting gas source.
In above-mentioned processing procedure, because the even injection device of this gas can make the second less reacting gas source of flow be uniformly distributed in the deposition boiler tube.Therefore when deposited silicon nitride layer, first reacting gas source in each zone in the deposition boiler tube and the blending ratio of second reacting gas source have consistence.So, can be so that have good deposition uniformity between each wafer in the brilliant boat.
Via as can be known above-mentioned, the formation method of silicon nitride layer of the present invention is that deposition boiler tube is provided earlier, and this deposition boiler tube comprises outer tube, brilliant boat, air injector and the even injection device of gas.Wherein brilliant boat is configured in outer tube inside, in order to carry most wafers.In addition, air injector is between outer tube and brilliant boat.In addition, the even injection device of gas is between outer tube and brilliant boat, and the gas exported of the even injection device of gas can be uniformly distributed in the deposition boiler tube thus.Then, the silicon containing gas body source is delivered in the deposition boiler tube by air injector, and the nitrogenous gas source that will be mixed with carrier gas is delivered in the deposition boiler tube by the even injection device of gas, with in the crystal column surface deposited silicon nitride layer.
By technique scheme, the formation method of silicon nitride layer of the present invention has following advantage at least:
1, because the even injection device of gas of the present invention can be so that the second less relatively reacting gas source of flow be uniformly distributed in the deposition boiler tube, therefore when deposited silicon nitride layer, first reacting gas source in each zone in the deposition boiler tube and the blending ratio of second reacting gas source are to have consistence.So, can be so that have good deposition uniformity between each wafer in the brilliant boat.
2, since utilize method of the present invention can so that the wafer at brilliant boat bottom to top its go up formed silicon nitride layer, its thickness has consistence, so can improve the wafer throughput of primary depositing processing procedure.
3, for micro-electro-mechanical systems element, because the even injection device of gas of the present invention can make the less nitrogenous gas source of flow be uniformly distributed in the deposition boiler tube.Therefore when deposited silicon nitride layer, each the regional silicon containing gas body source in the deposition boiler tube and the blending ratio in nitrogenous gas source are to have consistence.So it is thicker that each crystal column surface that can be in brilliant boat forms thickness, and the lower silicon nitride layer of stress, to meet the demand of micro-electro-mechanical systems element.
In sum, the formation method of silicon nitride layer of the present invention can solve the problem that the wafer volume production is difficult in the processing procedure of micro-electro-mechanical systems element, also can solve prior art method in the not good problem of deposition uniformity between each wafer on the brilliant boat.It has above-mentioned plurality of advantages and practical value, and in class methods, do not see have similar design to publish or use and really genus innovation, no matter it is all having bigger improvement on method or on the function, have technically than much progress, and produced handy and practical effect, thereby being suitable for practicality more, having the extensive utility value of industry, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technique means of the present invention, and can be implemented according to the content of specification sheets, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 is the diagrammatic cross-section according to a kind of vertical type deposition boiler tube of a preferred embodiment of the present invention.
100: deposition boiler tube 102: outer tube
104: interior pipe 106: brilliant boat
108: air injector 110: the microporous air injector
112: gas outlet end 114: brilliant boat pedestal
116: wafer 118,122: gas input part
120: gas efferent 124: extension
126: gas delivery outlet 130: bottom base
Embodiment
Reach technique means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, its embodiment of formation method, formation method, step, feature and the effect thereof of the silicon nitride layer that foundation the present invention is proposed, describe in detail as after.
Seeing also shown in Figure 1ly, is the diagrammatic cross-section of a kind of vertical type deposition boiler tube of a preferred embodiment of the present invention.
The formation method of silicon nitride layer of the present invention is the vertical type deposition boiler tube 100 that at first provides as shown in Figure 1.This deposition boiler tube 100 includes outer tube 102, interior pipe 104, brilliant boat 106, air injector 108 and the even injection device of gas.Wherein the even injection device of gas for example is a microporous air injector 110 or can be so that the gas of being exported is uniformly distributed in other the suitable gas injection apparatus in the deposition boiler tube 100.
The inwall of above-mentioned outer tube 102 is to define a cvd reactive chamber, and its material for example is quartzy.And, more comprising having gas outlet end 112 on the outer tube 102, this gas outlet end 112 is to be connected with the pump (not shown), in order to extract by product or unreacted reactant gases that deposition reaction produced out reaction chamber.In addition, interior pipe 104 be disposed at outer tube 102 in, its material for example is quartzy.In addition, brilliant boat 106 is the inside of pipe 104 in the configuration, and is positioned on the brilliant boat pedestal 114, in order to carry most wafers 116.
In addition, this air injector 108 is made of gas input part 118 and gas efferent 120.Wherein gas input part 118 is connected with gas efferent 120 via bottom base 130.And gas efferent 120 is between interior pipe 104 and brilliant boat 106, so that reactant gases is exported in the deposition boiler tube 100.
In addition, microporous air injector 110 is made of gas input part 122 and extension 124, and is to have most gas delivery outlets 126 on the extension 124.Wherein gas input part 122 is connected with extension 124 via bottom base 130.And extension 124 is between interior pipe 104 and brilliant boat 106, and extends along the bearing of trend of brilliant boat 106, and it for example is to extend up.In addition, the gas delivery outlet 126 on the extension 124 can make reactant gases be uniformly distributed in the deposition boiler tube 100.Particularly, the length of extension 124 with and on the number of gas delivery outlet 126 and without particular limitation, as long as that is the reactant gases of being imported is uniformly distributed in the deposition boiler tube 100.In a preferred embodiment, the number of gas delivery outlet 126 is greater than more than 5.
Then, first reacting gas source is delivered in the deposition boiler tube 100 by this air injector 108, and second reacting gas source is delivered in the deposition boiler tube 100 by microporous air injector 110, to form silicon nitride layer on wafer 116 surfaces.Wherein, the flow of the first above-mentioned reacting gas source is the flow greater than second reacting gas source.In a preferred embodiment, first reacting gas source for example is the nitrogenous gas source, and second reacting gas source for example is the silicon containing gas body source, and therefore formed silicon nitride layer is to be many nitrogen (Nitrogen-Rich) silicon nitride layer.In another preferred embodiment, first reacting gas source for example is the silicon containing gas body source, and second reacting gas source for example is the nitrogenous gas source, and formed silicon nitride layer is to be many silicon (Silicon-Rich) silicon nitride layer.Wherein above-mentioned silicon containing gas body source for example is dichlorosilane or other suitable siliceous gas, and above-mentioned nitrogenous gas source for example is ammonia or other suitable nitrogenous gas.
In addition, in another embodiment, air injector 108 also can be similar microporous air injector 110 shown in Figure 1, and it is made of gas input part and extension, and is to have most gas delivery outlets on the extension.
Owing to have most gas delivery outlets 126 on the above-mentioned microporous air injector 110, therefore the second less reacting gas source of flow can be uniformly distributed in the deposition boiler tube 100, and then makes blending ratio each zone in deposition boiler tube 100 of the win reacting gas source and second reacting gas source have consistence.Thus, wafer 116 surfaces at eleutheromorph boat 106 bottoms to top all can form the silicon nitride layer of film thickness unanimity.
In addition, with the processing procedure of MEMS (micro electro mechanical system) (MEMS) element,, be to be good to form many silicon silicon nitride layer in order to meet its requirement to the low-stress of silicon nitride layer.In a preferred embodiment, above-mentioned silicon containing gas body source for example is a dichlorosilane, and the nitrogenous gas source for example is an ammonia, and the flow proportional of this dichlorosilane and ammonia is in this way at least greater than 3: 1, wherein the flow of dichlorosilane unit time for example is 450ml, and the flow of ammonia unit time for example is 90ml.Because in the forming process of silicon nitride layer, have most gas delivery outlets 126 on the microporous air injector 110, therefore the less nitrogenous gas source of flow can be uniformly distributed in the deposition boiler tube 100, and then makes each zone of blending ratio in deposition boiler tube 100 in silicon containing gas body source and nitrogenous gas source have consistence.Thus, it is consistent and have a silicon nitride layer of low-stress that wafer 116 surfaces at eleutheromorph boat 106 bottoms to top all can form thickness.In addition, the nitrogenous gas source that flow is lower is to be mixed with carrier gas, in order to carry and to dilute this nitrogenous gas source.In a preferred embodiment, the blending ratio in carrier gas and nitrogenous gas source for example is between 1: 1 to 10: 1, and wherein this carrier gas for example is nitrogen or other suitable gas, and the nitrogenous gas source for example is ammonia or other suitable nitrogenous gas.
What is particularly worth mentioning is that, if in order to the carrier gas in dilution nitrogenous gas source and the blending ratio in nitrogenous gas source is between 1: 1 to 10: 1, and in the process that forms silicon nitride layer, pressure in the deposition boiler tube 100 is between between the 0.1torr to 1torr, then utilize above-mentioned these process conditions can be, and also have good deposition uniformity between each wafer so that the silicon nitride layer of the wafer more than 100 on the brilliant boat 106 on it all has low-stress.In addition, utilize above-mentioned method more can form thickness, to meet the demand of micro-electro-mechanical systems element greater than the silicon nitride layer more than 3000 dusts.Therefore, the formation method of silicon nitride layer of the present invention also is applicable to the volume production micro-electro-mechanical systems element.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (17)
1, a kind of formation method of silicon nitride layer is applicable to the processing procedure of MEMS (micro electro mechanical system) (MEMS) element to be characterised in that this formation method may further comprise the steps:
One deposition boiler tube is provided, and this deposition boiler tube comprises:
One outer tube;
One brilliant boat is configured in the inside of this outer tube, in order to carry most wafers;
One air injector is between this outer tube and this crystalline substance boat; And
The even injection device of one gas, between this outer tube and this crystalline substance boat, and the gas of being exported by the even injection device of this gas can be uniformly distributed in this deposition boiler tube; And
One silicon containing gas body source is delivered in this deposition boiler tube by this air injector, and a nitrogenous gas source that will be mixed with a carrier gas is delivered in this deposition boiler tube by the even injection device of this gas, to deposit a silicon nitride layer at those crystal column surfaces, wherein the flow of this silicon containing gas body source is the flow greater than this nitrogenous gas source.
2, the formation method of silicon nitride layer according to claim 1 is characterized in that wherein said air injector comprises a microporous air injector, and this microporous air injector is along the bearing of trend extension of this crystalline substance boat.
3, the formation method of silicon nitride layer according to claim 1 is characterized in that the even injection device of wherein said gas comprises a microporous air injector, and this microporous air injector is along the bearing of trend extension of this crystalline substance boat.
4, the formation method of silicon nitride layer according to claim 3 is characterized in that wherein said microporous air injector has the gas delivery outlet more than 5.
5, the formation method of silicon nitride layer according to claim 1, the throughput ratio that it is characterized in that wherein said silicon containing gas body source and this nitrogenous gas source is at least greater than 3: 1.
6, the formation method of silicon nitride layer according to claim 5 is characterized in that wherein said silicon containing gas body source comprises dichlorosilane (Dichlorosilane, SiH
2Cl
2).
7, the formation method of silicon nitride layer according to claim 5 is characterized in that wherein said nitrogenous gas source comprises ammonia (NH
3).
8, the formation method of silicon nitride layer according to claim 1 is characterized in that the blending ratio in wherein said carrier gas and this nitrogenous gas source is between 1: 1 to 10: 1.
9, the formation method of silicon nitride layer according to claim 8 is characterized in that wherein said carrier gas comprises nitrogen.
10, the formation method of silicon nitride layer according to claim 8 is characterized in that wherein in the process that forms this silicon nitride layer, the pressure in this deposition boiler tube is between between the 0.1torr to 1torr.
11, a kind of formation method of silicon nitride layer is characterized in that this formation method may further comprise the steps:
One deposition boiler tube is provided, and this deposition boiler tube comprises:
One outer tube;
One brilliant boat is configured in the inside of this outer tube, in order to carry most wafers;
One air injector is between this outer tube and this crystalline substance boat; And
The even injection device of one gas, between this outer tube and this crystalline substance boat, and the gas of being exported by the even injection device of this gas can be uniformly distributed in this deposition boiler tube; And
One first reacting gas source is delivered in this deposition boiler tube by this air injector, and one second reacting gas source is delivered in this deposition boiler tube by the even injection device of this gas, to deposit a silicon nitride layer at those crystal column surfaces, wherein the flow of this first reacting gas source is the flow greater than this second reacting gas source.
12, the formation method of silicon nitride layer according to claim 11 is characterized in that wherein said air injector comprises a microporous air injector, and this microporous air injector is along the bearing of trend extension of this crystalline substance boat.
13, the formation method of silicon nitride layer according to claim 11 is characterized in that the even injection device of wherein said gas comprises a microporous air injector, and this microporous air injector is along the bearing of trend extension of this crystalline substance boat.
14, the formation method of silicon nitride layer according to claim 13 is characterized in that wherein said microporous air injector has the gas delivery outlet more than 5.
15, the formation method of silicon nitride layer according to claim 11, it is characterized in that wherein said first reacting gas source be for a silicon containing gas body source and a nitrogenous gas source one of them, and this second reacting gas source is to be wherein another.
16, the formation method of silicon nitride layer according to claim 15 is characterized in that wherein said silicon containing gas body source comprises dichlorosilane.
17, the formation method of silicon nitride layer according to claim 15 is characterized in that wherein said nitrogenous gas source comprises ammonia.
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| CN 200410042967 CN1706984A (en) | 2004-06-04 | 2004-06-04 | Silicon nitride layer forming process |
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| CN101368289B (en) * | 2007-08-14 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Deposition boiler tube |
| WO2012071929A1 (en) * | 2010-12-01 | 2012-06-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray device and crystal membrane growth apparatus |
| CN102051601B (en) * | 2009-10-29 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | Thin film deposition method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101368289B (en) * | 2007-08-14 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Deposition boiler tube |
| CN102011099B (en) * | 2009-09-07 | 2012-07-25 | 和舰科技(苏州)有限公司 | Deposition doped polysilicon machine board |
| CN102051601B (en) * | 2009-10-29 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | Thin film deposition method |
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