CN1705415A - Organic electroluminescent display and method for manufacturing same - Google Patents
Organic electroluminescent display and method for manufacturing same Download PDFInfo
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- CN1705415A CN1705415A CN 200410042769 CN200410042769A CN1705415A CN 1705415 A CN1705415 A CN 1705415A CN 200410042769 CN200410042769 CN 200410042769 CN 200410042769 A CN200410042769 A CN 200410042769A CN 1705415 A CN1705415 A CN 1705415A
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Abstract
An organic electro photoluminescence display device and making method, which contains providing a first substrate, making plurality of active assembly on first substrate, defining plurality of pixel areas on said active assembly, forming a color light filtering layer above pixel areas, making flatness processing to reduce surface roughness, forming a positive electrode, forming organic electro photoluminescence layer on said positive electrode, then forming a negative electrode on laminated layer of organic electro photoluminescence layer.
Description
Technical field
The invention relates to the structure and the manufacture method thereof of a kind of organic electro-luminescent display (OLED) panel, and be particularly to a kind of integral color filter layer in driving component substrate (color filter onarray, COA) structure and the manufacture method thereof of the organic electro-luminescent display panel on.
Background technology
(it is had is enough to replace LCD to each bound pair organic EL component for organic light emitting device, research OLED), and becomes time potentiality of generation display in recent years.Owing to itself be the active illuminating assembly, so organic electro-luminescent display (OLED) seemingly do not need backlight module as the LCD, helps the lightweight of display.In addition, organic electro-luminescent display provides high contrast, fast response, and the visual angle broader than LCD (can reach 160 degree).
Organic electro-luminescent display mainly utilizes Organic Light Emitting Diode (OLED; Organic lightemitting diode) provide initiatively display light source, it is with the light-emitting diode of organic layer as active layers (active layer), and makes positive and negative electrode up and down to constitute a stack architecture (stack) at organic layer.One of above-mentioned electrode is necessary for transparent, so that the light that organic layer sends can penetrate out through hyaline layer thus.
Fig. 1 is the fragmentary cross-sectional view of an existing organic electro-luminescent display 1.As shown in the figure, this organic electro-luminescent display 1 comprises a monochromatic organic electric-excitation luminescent display module 3, and it has the integral color filter layer in driving component substrate (color filter on array, COA) structure on 2, so that the monochromatic light that organic layer 30 sends forms ruddiness, green glow or blue light respectively after via indivedual chromatic filter layers 81,82,83.
As figure, at present in the organic electro-luminescent display 1, generally on substrate 2, deposit indium oxide layer tin (Indium tin oxide, ITO), and select the metallic element of low work function (low-workfunction) or alloy as its corresponding negative electrode 32 (as Ca, Al, Mg/Ag or Al/Li) as transparent anode 31.
Since at the integral color filter layer in driving component substrate (color filter on array, COA) in the structure on 2, chromatic filter layer 81,82, there is certain roughness (Ra is greatly about about 20nm) on 83 surface, if directly in these chromatic filter layers 81,82, form a transparent electrode layer on 83 the surface as anode, then the surface flatness of this transparent electrode layer will be subjected to the influence of chromatic filter layer, form the Ra rough surface about about 20nm greatly, not only can't reach the requirement (Ra generally need less than 10nm) of organic EL component to the electrode surface flatness, and cause the point discharge effect easily, cause the short circuit of thermomechanical components and the generation of leakage current, and then influence there are the efficient and the life-span of thermomechanical components.
For avoiding said circumstances to take place, need in the existing organic electro-luminescent display 1 flatness layer 5 to be set at transparent electrode layer 31 and 81,82,83 of integral color filter layers, to avoid chromatic filter layer 81,82,83 inborn roughness to influence the surface of follow-up transparent electrode layer 31 so that cause the usefulness reduction of whole organic EL component 3.
Summary of the invention
In view of this, the objective of the invention is to improve the surface roughness of chromatic filter layer, be provided with under the prerequisite of a flatness layer not needing more, a smooth transparent electrode layer is provided, be beneficial to the simplification and the lifting that reaches organic electro-luminescent display usefulness of processing procedure.
For reaching above-mentioned purpose, the present invention is between the organic electro-luminescent display processing procedure carries out, forming the integral color filter layer after the structure on the driving component substrate (COA), by chromatic filter layer is handled, to reach the purpose that reduces its surface roughness, can keep smooth surface to guarantee follow-up making transparent electrode layer thereon.
The invention provides a kind of manufacture method of organic electro-luminescent display, its step comprises: one first substrate at first is provided, makes a plurality of driving components on this first substrate, define a plurality of pixel regions simultaneously on these driving components.Form a chromatic filter layer in these pixel region tops afterwards.Then carry out of the present invention one key step: this chromatic filter layer is carried out a planarization, to reduce its surface roughness.Afterwards, form an anode electrode in this chromatic filter layer top.It is laminated in this anode electrode top then to form an organic electric-excitation luminescent, forms a cathode electrode again in the laminated top of this organic electric-excitation luminescent.The manufacture method of above-mentioned organic electro-luminescent display also can further comprise and one second substrate is set on cathode electrode, and subtend is in the step of first substrate.
According to the present invention, preferable being reduced to below the 10nm of color filter surfaces roughness after the above-mentioned planarization.And being formed on the electrode of color filter surfaces, its surface roughness Ra is preferable also below 10nm, that is between 0~10nm.
According to the present invention, above-mentioned planarization for example is that UV optical processing, oxygen plasma are handled or milled processed.The UV optical processing is preferably Excimer UV light (Excimer UV) processing or surface corona (Corona) is handled; Milled processed for example is a cmp.Above-mentioned chromatic filter layer and anode electrode are preferable all to be handled or milled processed through this UV optical processing, oxygen plasma, with the flatness of guaranteeing that it is surperficial.
According to the present invention, above-mentioned anode electrode is for example by being made up of tin indium oxide (ITO), indium oxide lead or other metal oxide; The composition material of above-mentioned cathode electrode for example is metal alloy, Ca, Al, Mg, Mg/Ag alloy, Al/Li alloy or its combination.Above-mentioned planarization also can utilize the Ar, oxygen or the aqueous vapor that are fed before this indium tin oxide layer of formation to reduce between surface roughness Ra to the 0~10nm of this chromatic filter layer to form the electricity slurry.
The present invention provides a kind of organic electro-luminescent display simultaneously, comprising: an integral color filter layer in the driving component substrate (color filter on array, COA) on, wherein the surface roughness Ra of this integral color filter layer is between 0~10nm; One anode electrode is formed on this integral color filter layer, and its surface roughness is between 0~10nm; One organic electric-excitation luminescent is laminated, is formed on this anode electrode; And one cathode electrode be formed at this organic electric-excitation luminescent laminated on.Above-mentioned organic electro-luminescent display also can further comprise a substrate and be arranged on this cathode electrode, and subtend is in this driving component substrate.
According to the present invention, above-mentioned anode electrode, organic electric-excitation luminescent is laminated and the formation of cathode electrode can be the organic electric-excitation luminescent display module, white light organic electroluminescence display module for example.Laminated electron injecting layer, electron transfer layer, luminescent layer, electric hole transport layer and the electric hole implanted layer of comprising of above-mentioned organic electric-excitation luminescent.
According to the present invention, above-mentioned driving component can comprise amorphous silicon (a-Si) thin-film transistor or low temperature polycrystalline silicon (LTPS) thin-film transistor.
Description of drawings
Fig. 1 is the fragmentary cross-sectional view of an existing organic electro-luminescent display.
Fig. 2 A-Fig. 2 B is in the flow process of driving component substrate in order to explanation preparation one integral color filter layer.
The integral color filter layer is in the fragmentary cross-sectional view of driving component substrate 200 in chromatic filter layer 208 districts among Fig. 3 A displayed map 2B.
Fig. 4 A-Fig. 4 D is the follow-up making flow process in order to organic electro-luminescent display among the explanation embodiment.
Symbol description:
200,200 '~substrate;
202~resilient coating;
204~gate insulator;
206~dielectric layer;
207~chromatic filter layer fate;
208~chromatic filter layer;
Chromatic filter layer after 208 '~planarization;
212~transparency electrode;
214~insulating barrier;
220~polycrystalline SiTFT;
221~drain electrode;
The laminated fate of 222~organic electric-excitation luminescent;
230~organic electric-excitation luminescent is laminated;
240~electrode layer;
250~grid;
251~source electrode;
255~raceway groove;
256~source/drain regions;
257~contact hole;
701~electron injecting layer;
702~electron transfer layer; 703~luminescent layer;
704~electric hole transport layer; 705~electric hole implanted layer.
1~organic electro-luminescent display;
2~integral color filter layer is in active substrate (COA);
3~organic electric-excitation luminescent display module; 30~organic layer;
31~anode; 32~negative electrode; 5~flatness layer;
81,82,83~chromatic filter layer.
Embodiment
In order to allow above-mentioned purpose of the present invention, feature and advantage become apparent, cited below particularlyly go out preferred embodiment, and cooperate appended diagram, be described in detail below:
Embodiment
Below with reference to Fig. 2 A-Fig. 4 D, present embodiment organic electro-luminescent display and preparation method thereof is described.
At first, prepare an integral color filter layer in the flow process of driving component module board with reference to figure 2A-Fig. 2 B explanation, integral color filter layer among the present invention is in driving component module board top, for example be the pixel drive assembly that constituted by amorphous silicon film transistor array (a-Si TFTs array) transparent substrates (for example, substrate of glass), or for low-temperature polysilicon film transistor (LTPS-TFT) the driving component substrate that array constituted.
The driving component substrate that present embodiment is constituted with the low-temperature polysilicon film transistor array is an example, and be that example illustrates that it makes flow process with the pattern of top grid (top gate), yet the present invention also can be applicable to the driving component substrate of bottom-gate (bottom gate).
At first, please refer to Fig. 2 A, one substrate 200 is provided, on this substrate 200, form a resilient coating (buffer layer) 202, and on this resilient coating 202, form a plurality of tops grid low-temperature polysilicon film transistor 220, wherein this top grid low-temperature polysilicon film transistor 220 comprises: a grid 250, one source pole 251, drain electrode 221, one gate insulator 204, a raceway groove 255 and a source (S/D) 256, and this drain electrode 221 and couple with this source/drain regions 256 via the contact hole 257 of a dielectric layer 206.Wherein the upper surface of this dielectric layer 206 is to have a chromatic filter layer fate 207, and the Organic Light Emitting Diode luminescence unit that is formed afterwards is the top that is formed in this chromatic filter layer fate 207.Above-mentioned substrate 200 can be a transparency carrier, can be the plastic material of glass or printing opacity.If plastic base, its material can be polyethylene terephthaldehyde ester (polyethyleneterephthalate), polyester (polyester), Merlon (polycarbonates), polyacrylate (polyacrylates) or polystyrene (polystyrene); And this polycrystalline SiTFT is the control unit as this organic electro-luminescent display, can be with the low temperature manufacturing technology person of finishing.
Then, please refer to Fig. 2 B, form a chromatic filter layer 208 on this chromatic filter layer fate 207, and the use of this chromatic filter layer 208 can substitute, and for example can form Red lightscreening plate, green color filter and blue color filter in regular turn in array of pixels according to the needs of array of pixels.And the filter that the use of this chromatic filter layer also can be with two kinds of colors reaches full-color effect.The generation type of this chromatic filter layer 208 can be pigment dispersing method, decoration method, electricity method or print process.
The integral color filter layer is in the fragmentary cross-sectional view of driving component substrate 200 in chromatic filter layer 208 districts among Fig. 3 A displayed map 2B, because the roughness on chromatic filter layer 208 surfaces is excessive, if directly carry out the deposition of subsequent electrode again, can cause the electrode surface unevenness, influence display performance.Therefore, then carry out a committed step of the present invention at this: chromatic filter layer 208 is carried out planarization.
In addition, also can be in board in order to deposition subsequent electrode (as indium tin oxide layer), when carrying out the pre-treatment step of depositing electrode, under the Ar, oxygen or the aqueous vapor atmosphere that feed board, produce the electricity slurry to carry out the planarization of chromatic filter layer, to reduce its surface roughness Ra to 10nm.
Adopt Excimer UV light (wavelength 308nm) to come chromatic filter layer 208 is carried out planarization in the present embodiment, table 1 was listed through different disposal after the time, handled the surface roughness result of back chromatic filter layer 208 '.Show by the result, after the Excimer UV optical processing, can effectively the surface roughness of chromatic filter layer 208 be reduced to below the 10nm, and guarantee that the electrode layer surface roughness of subsequent deposition on it is also below 10nm, to meet the demand of OLED.
Table 1 Excimer UV optical processing result
????No. | Processing time (sec) | Surface roughness Ra (nm) |
????1 | ????10 | ????7.4 |
????2 | ????25 | ????8.0 |
????3 | ????60 | ????7.1 |
????4 | ????120 | ????6.4 |
Afterwards, shown in Fig. 4 A, form a transparency electrode 212 in this integral color filter layer 208 ' on driving component substrate 200.At first compliance forms a transparency conducting layer 212 in the drain electrode 221 of polycrystalline SiTFT 220, and is coupled to the drain electrode 221 of polycrystalline SiTFT 220, then utilizes the lithography mode to remove partially transparent conductive layer 212 again.The etching mode of wherein removing partially transparent conductive layer 212 can be dry ecthing or wet etching mode.This transparency electrode 212 can be indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO) or zinc oxide (ZnO).And this transparency conducting layer 212 can be formed by sputtering method, electron beam evaporation plating method, hot vapour deposition method, chemical gaseous phase coating method and spray pyrolysis method.Forming transparency electrode 212 after the step on the planarization chromatic filter layer 208 ', can more comprise and use a cmp processing procedure that planarization is carried out on the surface of transparency electrode 212.The transparency electrode 212 of this planarization helps avoid assembly short circuit and leakage current.
Please refer to Fig. 4 B, form an insulating barrier (insulator layer) 214 on this transparency electrode 212, again with transparency electrode 212 as etching stopping layer, to these insulating barrier 214 etchings, to define the laminated fate 222 of organic electric-excitation luminescent on this transparency electrode 212.Then,, form an organic electric-excitation luminescent laminated 230 on the laminated fate 222 of the organic electric-excitation luminescent on this transparency electrode 212 and this insulating barrier 214, so that this organic electric-excitation luminescent laminated 230 contacts with these transparency electrode 212 upper surfaces as Fig. 4 C.This organic electric-excitation luminescent laminated 230 can be micromolecule or macromolecule Organic Light Emitting Diode material, if micromolecule Organic Light Emitting Diode material can utilize the vacuum evaporation mode to be formed with the OLED material layer; If macromolecule Organic Light Emitting Diode material then can use modes such as rotary coating, ink-jet or screen painting to be formed with the OLED material layer.In this preferred embodiment, this layer Organic Light Emitting Diode material layer is to be luminescent material with white OLED or white polymer light-emitting diode, and it comprises: an electron injecting layer 701 (EIL; Electron injection layer), an electron transfer layer 702 (ETL; Electron transport layer), a luminescent layer 703 (EL; Emittinglayer), electric hole transport layer 704 (HTL; Hole transport layer) and electric hole implanted layer 705 (HIL; Hole injection layer).
Then, shown in Fig. 4 D, form an electrode layer 240 on organic electric-excitation luminescent laminated 230, so that this electrode layer 240 contacts with this organic electric-excitation luminescent laminated 230, wherein electrode layer 240 is the negative electrodes as this Organic Light Emitting Diode.The mode that forms this electrode layer 240 can be vacuum thermal evaporation or sputtering way.For cooperating demand as the cathode electrode of OLED, should select for use and be fit to the electronics person that injects the organic semiconducting materials, as low-work-function materials such as Ca, Al, Mg, Mg/Ag alloy, Al/Li alloys, the preferably is Mg or Mg-Ag alloy, or is the laminated of Mg or Mg-Ag alloy and tin indium oxide (ITO).
At last, a substrate 200 ' is set on cathode electrode 240, subtend is so far finished the making of present embodiment organic electro-luminescent display in this driving component substrate 200.
The structure of present embodiment organic electro-luminescent display, shown in Fig. 4 D, comprise integral color filter layer 208 ' in the driving component substrate (color filter on array, COA) 200, wherein the surface roughness Ra of integral color filter layer 208 ' is between 0~10nm; Anode electrode 212 is formed on the integral color filter layer 208 ', and its surface roughness is between 0~10nm; Organic electric-excitation luminescent is laminated 230, is formed on the anode electrode 212; Cathode electrode 240 is formed on the organic electric-excitation luminescent laminated 230; And substrate 200 ' is arranged on the cathode electrode 240, and subtend is in driving component substrate 200.Above-mentioned organic electric-excitation luminescent laminated 230 also comprises electron injecting layer 701, electron transfer layer 702, luminescent layer 703, electric hole transport layer 704 and electric hole implanted layer 705.
As above-mentioned, the structure of organic electro-luminescent display of the present invention and manufacture method, by in advance planarization being carried out on chromatic filter layer 208 surfaces, further reduce its surface roughness, can keep smooth surface to guarantee follow-up making transparent electrode layer thereon.
In addition, the present invention can actually improve the surface roughness of chromatic filter layer, do not needing more under the prerequisite that a flatness layer is set above the chromatic filter layer, a smooth transparent electrode layer can be provided, be beneficial to the simplification and the lifting that reaches organic electro-luminescent display usefulness of processing procedure.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking appended the claim scope person of defining.
Claims (10)
1. the manufacture method of an organic electro-luminescent display comprises:
One substrate is provided;
On this substrate, form a plurality of driving components, and define a plurality of pixel regions;
Form a chromatic filter layer in those pixel region tops;
This chromatic filter layer is carried out a planarization, to reduce its surface roughness; And
Form an electrode in this chromatic filter layer top.
2. the manufacture method of organic electro-luminescent display according to claim 1, wherein this planarization comprises that UV optical processing, oxygen plasma handle or milled processed.
3. the manufacture method of organic electro-luminescent display according to claim 2, wherein this UV optical processing comprises that Excimer UV optical processing or surface corona handle.
4. the manufacture method of organic electro-luminescent display according to claim 1 wherein more comprises this electrode is carried out UV optical processing, oxygen plasma processing or milled processed.
5. the manufacture method of organic electro-luminescent display according to claim 1, it more comprises:
It is laminated in this electrode top to form an organic electric-excitation luminescent; And
Form one second electrode in the laminated top of this organic electric-excitation luminescent.
6. the manufacture method of organic electro-luminescent display according to claim 5, wherein this electrode, this organic electric-excitation luminescent is laminated with this second electrode is to constitute a monochromatic organic electric-excitation luminescent display module.
7. the manufacture method of organic electro-luminescent display according to claim 1, wherein this electrode comprises an indium tin oxide layer, indium zinc oxide or other metal oxide.
8. the manufacture method of organic electro-luminescent display according to claim 7, wherein the planarization of this chromatic filter layer is before forming this indium tin oxide layer, in board, feed Ar, oxygen or aqueous vapor with after producing the electricity slurry, reduce between surface roughness to the 0~10nm of this chromatic filter layer.
9. organic electro-luminescent display comprises:
One chromatic filter layer, wherein this chromatic filter layer is to make its surface roughness between 0~10nm through a planarization;
One electrode is formed on this chromatic filter layer, and its surface roughness is between 0~10nm;
One organic electric-excitation luminescent is laminated in this electrode top; And
One second electrode is in the laminated top of this organic electric-excitation luminescent.
10. organic electro-luminescent display according to claim 9, wherein this chromatic filter layer comprises an amorphous silicon film transistor or a low-temperature polysilicon film transistor.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103681773A (en) * | 2013-12-27 | 2014-03-26 | 京东方科技集团股份有限公司 | Organic electroluminescent display device, preparation method thereof and display device |
CN113467143A (en) * | 2021-06-25 | 2021-10-01 | 惠科股份有限公司 | Array substrate manufacturing method, array substrate and display panel |
CN115236902A (en) * | 2022-06-16 | 2022-10-25 | 京东方科技集团股份有限公司 | Array substrate, liquid crystal display panel and liquid crystal display device |
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2004
- 2004-05-26 CN CNB2004100427696A patent/CN100470880C/en not_active Expired - Fee Related
Cited By (6)
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CN103681773A (en) * | 2013-12-27 | 2014-03-26 | 京东方科技集团股份有限公司 | Organic electroluminescent display device, preparation method thereof and display device |
WO2015096367A1 (en) * | 2013-12-27 | 2015-07-02 | 京东方科技集团股份有限公司 | Organic electroluminescent display device and preparation method therefor, and display apparatus |
US9660192B2 (en) | 2013-12-27 | 2017-05-23 | Boe Technology Group Co., Ltd. | Organic electroluminescent display device with metal reflective layer |
CN113467143A (en) * | 2021-06-25 | 2021-10-01 | 惠科股份有限公司 | Array substrate manufacturing method, array substrate and display panel |
CN115236902A (en) * | 2022-06-16 | 2022-10-25 | 京东方科技集团股份有限公司 | Array substrate, liquid crystal display panel and liquid crystal display device |
CN115236902B (en) * | 2022-06-16 | 2023-11-28 | 京东方科技集团股份有限公司 | Array substrate, liquid crystal display panel and liquid crystal display device |
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