CN1696355A - Technical method for drawing silicon single-crystal - Google Patents
Technical method for drawing silicon single-crystal Download PDFInfo
- Publication number
- CN1696355A CN1696355A CN 200410018223 CN200410018223A CN1696355A CN 1696355 A CN1696355 A CN 1696355A CN 200410018223 CN200410018223 CN 200410018223 CN 200410018223 A CN200410018223 A CN 200410018223A CN 1696355 A CN1696355 A CN 1696355A
- Authority
- CN
- China
- Prior art keywords
- crystal
- silicon single
- stove
- silicon
- monocrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims description 25
- 239000010703 silicon Substances 0.000 title claims description 25
- 239000013078 crystal Substances 0.000 title claims description 24
- 238000000034 method Methods 0.000 title abstract description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000010453 quartz Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052786 argon Inorganic materials 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000002994 raw material Substances 0.000 claims abstract description 6
- 239000002210 silicon-based material Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 238000003672 processing method Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 230000004927 fusion Effects 0.000 claims description 3
- 230000006837 decompression Effects 0.000 claims description 2
- 230000002950 deficient Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000003723 Smelting Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100182237A CN1333115C (en) | 2004-05-11 | 2004-05-11 | Technical method for drawing silicon single-crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100182237A CN1333115C (en) | 2004-05-11 | 2004-05-11 | Technical method for drawing silicon single-crystal |
Publications (2)
Publication Number | Publication Date |
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CN1696355A true CN1696355A (en) | 2005-11-16 |
CN1333115C CN1333115C (en) | 2007-08-22 |
Family
ID=35349243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2004100182237A Expired - Fee Related CN1333115C (en) | 2004-05-11 | 2004-05-11 | Technical method for drawing silicon single-crystal |
Country Status (1)
Country | Link |
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CN (1) | CN1333115C (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102168302A (en) * | 2011-04-13 | 2011-08-31 | 天津市环欧半导体材料技术有限公司 | Double-quartz-crucible device and method for producing czochralski silicon single crystal |
CN102409397A (en) * | 2011-12-06 | 2012-04-11 | 江西旭阳雷迪高科技股份有限公司 | Monocrystalline silicon rod drawing process |
CN101571502B (en) * | 2009-06-15 | 2012-06-13 | 重庆大全新能源有限公司 | Method for measuring content of boron and content of phosphorus in polysilicon |
WO2012092691A1 (en) * | 2011-01-05 | 2012-07-12 | Liu Wenxiang | Regular semiconductor |
CN103074681A (en) * | 2013-02-17 | 2013-05-01 | 英利集团有限公司 | Secondary feeding method |
CN103282555A (en) * | 2010-12-28 | 2013-09-04 | 硅电子股份公司 | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
CN103397389A (en) * | 2013-07-30 | 2013-11-20 | 英利能源(中国)有限公司 | Production method of monocrystal rods |
CN104499048A (en) * | 2014-12-07 | 2015-04-08 | 海安县石油科研仪器有限公司 | Monocrystalline silicon growth process based on continuous feeding |
CN104746134A (en) * | 2015-03-30 | 2015-07-01 | 江苏盎华光伏工程技术研究中心有限公司 | N-type monocrystalline silicon drawing method by using compensation silicon material |
CN106795647A (en) * | 2014-08-29 | 2017-05-31 | 信越半导体株式会社 | Resistivity control method and N-shaped monocrystalline silicon |
CN107541772A (en) * | 2017-07-17 | 2018-01-05 | 晶科能源有限公司 | A kind of preparation method for mixing algan single crystal rod |
CN110396715A (en) * | 2019-09-04 | 2019-11-01 | 内蒙古中环光伏材料有限公司 | A kind of pulling of crystals repeatedly throws technique again |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2952548B2 (en) * | 1993-03-15 | 1999-09-27 | コマツ電子金属株式会社 | Semiconductor single crystal manufacturing equipment |
JPH0840794A (en) * | 1994-08-03 | 1996-02-13 | Hitachi Ltd | Recharging method in process for producing single crystal silicon |
JP2935337B2 (en) * | 1994-11-21 | 1999-08-16 | 信越半導体株式会社 | Apparatus and method for supplying granular raw material |
TW588127B (en) * | 2000-02-01 | 2004-05-21 | Komatsu Denshi Kinzoku Kk | Apparatus for pulling single crystal by CZ method |
JP4854357B2 (en) * | 2006-03-27 | 2012-01-18 | 東芝機械株式会社 | Transfer apparatus and transfer method |
-
2004
- 2004-05-11 CN CNB2004100182237A patent/CN1333115C/en not_active Expired - Fee Related
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101571502B (en) * | 2009-06-15 | 2012-06-13 | 重庆大全新能源有限公司 | Method for measuring content of boron and content of phosphorus in polysilicon |
CN103282555A (en) * | 2010-12-28 | 2013-09-04 | 硅电子股份公司 | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
CN103282555B (en) * | 2010-12-28 | 2016-08-17 | 硅电子股份公司 | Silicon single crystal manufacture method, silicon single crystal and wafer |
WO2012092691A1 (en) * | 2011-01-05 | 2012-07-12 | Liu Wenxiang | Regular semiconductor |
CN102168302B (en) * | 2011-04-13 | 2012-11-07 | 天津市环欧半导体材料技术有限公司 | Double-quartz-crucible device and method for producing czochralski silicon single crystal |
CN102168302A (en) * | 2011-04-13 | 2011-08-31 | 天津市环欧半导体材料技术有限公司 | Double-quartz-crucible device and method for producing czochralski silicon single crystal |
CN102409397A (en) * | 2011-12-06 | 2012-04-11 | 江西旭阳雷迪高科技股份有限公司 | Monocrystalline silicon rod drawing process |
CN103074681A (en) * | 2013-02-17 | 2013-05-01 | 英利集团有限公司 | Secondary feeding method |
CN103074681B (en) * | 2013-02-17 | 2016-03-16 | 英利集团有限公司 | A kind of secondary charging method |
CN103397389A (en) * | 2013-07-30 | 2013-11-20 | 英利能源(中国)有限公司 | Production method of monocrystal rods |
CN103397389B (en) * | 2013-07-30 | 2016-08-10 | 英利能源(中国)有限公司 | The production method of monocrystal rod |
US10400353B2 (en) | 2014-08-29 | 2019-09-03 | Shin-Etsu Handotai Co., Ltd. | Method for controlling resistivity and N-type silicon single crystal |
CN106795647B (en) * | 2014-08-29 | 2020-02-07 | 信越半导体株式会社 | Resistivity control method and n-type monocrystalline silicon |
CN106795647A (en) * | 2014-08-29 | 2017-05-31 | 信越半导体株式会社 | Resistivity control method and N-shaped monocrystalline silicon |
CN104499048A (en) * | 2014-12-07 | 2015-04-08 | 海安县石油科研仪器有限公司 | Monocrystalline silicon growth process based on continuous feeding |
CN104746134A (en) * | 2015-03-30 | 2015-07-01 | 江苏盎华光伏工程技术研究中心有限公司 | N-type monocrystalline silicon drawing method by using compensation silicon material |
CN107541772A (en) * | 2017-07-17 | 2018-01-05 | 晶科能源有限公司 | A kind of preparation method for mixing algan single crystal rod |
CN110396715A (en) * | 2019-09-04 | 2019-11-01 | 内蒙古中环光伏材料有限公司 | A kind of pulling of crystals repeatedly throws technique again |
Also Published As
Publication number | Publication date |
---|---|
CN1333115C (en) | 2007-08-22 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI KAMUDANKE SOLAR ENERGY TECHNOLOGY CO., L Free format text: FORMER OWNER: KAMUDANKE SEMICONDUCTOR CO., LTD., SHANGHAI Effective date: 20071116 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20071116 Address after: 201300 Shanghai Huinan town Simon intelligent court Patentee after: Shanghai Comtec Solar Technology Co., Ltd. Address before: 201300 Shanghai Huinan town Nanhui District Simon intelligent court Patentee before: Kamudanke Semiconductor Co., Ltd., Shanghai |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180611 Address after: 226601 Donghai Road (East) 12, Haian Development Zone, Haian County, Nantong, Jiangsu. Patentee after: Comtec Solar (Jiangsu) Co., Ltd. Address before: 201300 Shanghai Huinan town Simon intelligent court Patentee before: Shanghai Comtec Solar Technology Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070822 Termination date: 20190511 |
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CF01 | Termination of patent right due to non-payment of annual fee |