CN1690847A - Method for acceptable defect location for large size light mask substrate and production of light mask - Google Patents
Method for acceptable defect location for large size light mask substrate and production of light mask Download PDFInfo
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- CN1690847A CN1690847A CNA200410037315XA CN200410037315A CN1690847A CN 1690847 A CN1690847 A CN 1690847A CN A200410037315X A CNA200410037315X A CN A200410037315XA CN 200410037315 A CN200410037315 A CN 200410037315A CN 1690847 A CN1690847 A CN 1690847A
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Abstract
The invention discloses a large scale light shield base material that can receive defect location and its preparation method. It lies on that after the defect information of entire large scale light shield base material (empty light shield) or light shield after etching but not mending is read, classify it to for key zone and non-key zone. What the key zone means can not be accepted as defect zone, and similar to non-key zone. For large scale light shield base material, if defect position is in non-key zone, the material can be accepted; for large scale light shield, lisht shield mending system just need to mend the defect in key zone.
Description
Technical field
The present invention relates to a kind of light shield base material acceptable defect location and light shield production method, particularly, further be divided into critical area and non-critical areas by defect information at a kind of large scale light shield base material acceptable defect location and light shield production method.For large scale light shield base material, if defective locations all is positioned at non-critical areas, then this light shield base material is regarded as and can accepts.And to large scale light shield part, the light shield mending system only needs the mask defect that is positioned at critical area is repaired.
Background technology
LCD has that volume is little, in light weight, low voltage drive, low power consumption, portable advantage such as do not take up space, very wide of its product range of application, ever-changing from daily life field to industrial high-level application etc., comprise clock and watch, counter, TV, communication product, medical equipment, air transportation, commercial unit, military specific use etc., high-quality LCD replaces traditional color-picture tube gradually at present.
LCD (LCD; Liquid Crystal Display) manufacturing process is as follows haply: clean glass substrate (preceding cleaning engineering), form one deck indium tin oxide (ITO on glass substrate; Indium TinOxide) conductive layer (pattern engineering), on the indium tin oxide conductive layer, form one deck alignment film (orientation transfer printing engineering), in between two sheet glass substrates, scatter a clearance material (spacer), megohmite insulant (glue frame coating engineering) in two sheet glass substrate peripherals printing epoxy resin, with two plate bases applyings (combination sealing engineering), cutting and sliver, liquid crystal injects and pressurization, the glass substrate corner chamfering engineering of liquid crystal panel, the liquid crystal panel check, polaroid attaches engineering, and last check.
Wherein, the colored filter of LCD mainly is prior on the aforesaid wherein glass substrate, via distinct program, plates a black surround (Black Matrix) and and has red, blue, green color filter film (Color Filter Film).Then, forming the conductor layer that one deck has pattern (pattern) again, for example is the indium tin oxide conductive layer, as with another sheet glass substrate on thin film transistor (TFT) array (TFT Array; When ThinFilm Transistor Array) engaging, drive the shared electrode (being aforesaid pattern engineering) that liquid crystal is used, so form a colour liquid crystal display device in order to the required colored filter of display color.
In the processing procedure of foregoing liquid crystal display, be that the black surround on pattern engineering, orientation transfer printing engineering or the colored filter and the formation of red, blue, green color filter film all need utilize exposure imaging technology (little shadow technology).For instance, when wanting on glass substrate, to make conductive layer, at first to prepare to have the light shield (photo mask) of required conductive layer pattern earlier, then utilize rubbing method (coating) on glass substrate, to form photoresist layer with sensitometric characteristic.When the directional light from light source is radiated on the photoresist layer through light shield, can form the figure identical in this photoresist layer with conductive layer pattern on the light shield.In other words, profit can intactly be delivered to the pattern on the light shield in the photoresist layer in such a way.Then develop and etch process, just can on glass substrate, form the conductor layer that one deck has required pattern.
For the foregoing reasons, in order effectively to improve whole LCD processing procedure dose rate, the precision of making mask pattern just seems extremely important.The main body of light shield is that the quartz glass by smooth and insulation transparent is constituted, and certainly, its material is not to have only quartz glass a kind of.The material of main part that more often is used has three kinds of soda glass, emulsion light shield and quartz glasss, but is almost replaced by quartz glass at present.
Then, be covered with opaque film of one deck or absorbent material on the surface of quartz glass.It should be noted that the needed pattern of conductive layer, all be formed in this opaque film (as metal level) or the absorbent material.Generally speaking, can select chromium (Cr), nickel (Ni) or aluminium (Al) to be used as the material of metal level.Form a photoresistance then and cover this opaque film, utilize the laser beam light in the exposure machine or the high-resolution exposure technique of electron beam that pattern form is exposed to the sun on photoresistance again.Subsequently, the slip-stick artist shows the pattern form in the opaque film on photoresistance as long as use developer, utilizes technology such as etching again, promptly this design transfer can be arrived opaque film, and form transparent region and zone of opacity on light shield.
Yet, in the manufacture process of light shield, can't form a flawless light shield, therefore when carrying out the micro-photographing process that pattern duplicates, need to repair earlier light shield.Defective on the light shield can be divided into transparency defect and opaque defect, wherein transparency defect ties up to and formerly on the defect area should have opaque film but in fact do not have, and opaque defect then ties up to and formerly on the transparent region should not have opaque film but in fact have.Therefore, light shield mending is filled up needle pore defect and is removed modes such as opaque defect.
Please refer to Figure 1A, it is the top view with light shield of defective, light shield 100 mainly is made up of zone of opacity 102, zone of opacity 104 and transparent region 110, yet is formed with needle pore defect 106 on zone of opacity 104, and on transparent region 110 opaque defect 108 is arranged.Please refer to Figure 1B, its illustrate is the sectional view of the light shield 100 of I-I profile line on Figure 1A, can see needle pore defect 106 and opaque defect 108 from Figure 1B.
Please refer to Fig. 2 A, light shield 100 is carried out light shield mending, can see that the opaque defect 108 in opaque defect removes zone 114 has removed, and formation pin hole repairing area 112 has been repaired needle pore defect 106 on zone of opacity 104.Please refer to Fig. 2 B, its illustrate is the sectional view of the light shield 100 of II-II profile line on Fig. 2 A, from Fig. 2 B, can see pin hole repairing area 112 contain a part zone of opacity 104 and whole needle pore defect 106, and opaque defect 108 has been removed, and finishes the defective of repairing on the light shield 100.
General employed light shield mending technology for example has laser beam (Laser Beam), focused ion beam, and atomic force microscope (Atomic Force Microscopy) etc.Because the resolution of laser beam is limited, laser ablation may remove the opaque film adjacent with defect area, and hurts mask pattern.In addition,,, also can cause the vicinity of opaque defect or the quartz of lower floor to come to harm and roughening, and then reduce the phase place of quartzy transmittance and change transmitted light so not only can dissolve and evaporate opaque defect because laser beam can transmit a large amount of heat energy.Because focused ion beams focusing size much smaller than laser beam, therefore, is just repaired accuracy and output aspect, focused ion beam is occupied very big advantage, so focused ion beam has become the widely technology of a kind of light shield mending of utilization.
Yet the utilization focused ion beam is carried out light shield and is repaiied and still have several problems to be overcome.At first, form because light shield ties up on for example quartzy base material, and quartz is a kind of insulating material, so ion beam can make substrate surface charged, and reduction utilizes ion beam so that the ability of its imaging as a result.In addition, because gallium ion (Ga
+) can be focused into minimum ion beam radius, therefore focused ion beam is generally gallium ion beam under the high resolving power requiring, and the defect area on the gallium ion beam bombardment light shield, near the bombardment zone, produce secondary (Secondary) ion or electronics, and cause in the implanted quartz substrate of gallium ion, and develop gradually and cause electrically charged (Charging) phenomenon in the bombardment zone.Wherein and since the intensity of secondary ion or electronics a little less than, and be lowered into the quality of picture, even cause whole signal to die out, and make independent can't imaging as the pattern (Isolated Pattern) or the small independent defective (Pin Dot) of island.On the other hand, the electrically charged meeting in bombardment zone causes the gallium ion diffusion or even turns to and the loss of accuracy when causing the graphic defects repairing.
In addition, along with the consumer increases day by day to the demand of large scale liquid crystal display, and the popularization of LCD TV (LCDTV) cooperation Digital Television, the size of the required light shield of processing procedure also need increase.Therefore, to the large scale light shield before not repairing after large scale light shield base material (blank light shield) or the etching, its defective number also increases relatively, thus, more difficult except large scale light shield base material (blank light shield) by the existing fair receipts standard, also will spend more time and expense in the repairing of large scale mask defect.
Summary of the invention
In view of the large scale light shield before repairing after large scale light shield base material (blank light shield) in the above-mentioned prior art and the etching, its defective number increases because of size, cause large scale light shield base material (blank light shield) more difficult, also will spend more time and expense in the repairing of large scale mask defect by outside the existing fair receipts standard.So the invention provides a kind of new large scale light shield base material acceptable defect location and light shield production method, avoid said circumstances to produce.
An object of the present invention is to provide a kind of new large scale light shield base material acceptable defect location method, improve the fair yield of large scale light shield base material.
Another object of the present invention provides a kind of new large scale light shield production method, reduces the repairing number of times of large scale light shield.
According to above-described purpose, the invention provides a kind of method of large scale light shield base material acceptable defect location, comprise following steps: place the light shield base material in the light shield check system; Acquisition light shield base material image is in the light shield check system; Comparison light shield base material image in the light shield check system; The defective locations of output light shield base material is in the light shield check system; And the defective locations of judgement light shield base material; Wherein when defective locations all was positioned at non-critical areas, this light shield base material was for accepting.
Wherein, the step of judging the defective locations of light shield base material is finished in the light shield check system.
Wherein, the adjacent pictures of light shield check system acquisition light shield base material image is overlapped.
Wherein, non-critical areas refers to can not reduce the position of overall process yield.
According to above-described purpose, the invention provides the method that a kind of large scale light shield is produced, comprise following steps: repair preceding light shield in the light shield check system after placing etching; Acquisition light shield image is in the light shield check system; Comparison light shield image in the light shield check system; The defective locations of output light shield is in the light shield check system; Judge that light shield is positioned at the defective locations of critical area; And the repairing light shield is positioned at the defective of critical area in the light shield mending system.
Wherein, the step of judging the defective locations of light shield is finished in the light shield check system.
Wherein, the adjacent pictures of light shield check system acquisition light shield image is overlapped.
Wherein, critical area refers to reduce the position of overall process yield.
The present invention is described in detail with instantiation below in conjunction with accompanying drawing.
Description of drawings
Figure 1A is the top view with light shield of defective;
Figure 1B is the sectional view of the light shield of I-I profile line on Figure 1A;
Fig. 2 A is the top view that light shield with defective carries out light shield mending;
Fig. 2 B is the sectional view of the light shield of II-II profile line on Fig. 2 A;
Fig. 3 is a light shield testing fixture calcspar;
Fig. 4 is a light shield testing fixture pick-up image areal map;
Fig. 5 is the process flow diagram of large scale light shield base material acceptable defect location of the present invention; And
Fig. 6 is the process flow diagram for large scale light shield production method of the present invention.
Description of reference numerals: 100 light shields; 102,104 zones of opacity; 106 needle pore defects; 108 opaque defects; 110 transparent regions; 112 pin hole repairing areas; 114 defectives remove the zone; 1 checks controller; 2 master controllers; 3 place the XY platform of light shield; 4 laser scanning optical systems; 5 luminescence detectors; 6 images input divider; 71,72,73,74 image comparers.
Embodiment
Embodiments of the invention are described below.Yet except describing in detail, the present invention can also be widely in other embodiment execution, and therefore scope of the present invention is by appended claim definition.
The method of checking mask defect is that mask pattern is compared with using the computer-aided design (CAD) (CAD) of describing mask pattern.Light shield testing fixture comprises that an XY platform of placing light shield, image capture optical system that an acquisition is positioned over the pattern image of light shield on the XY platform, an image input block, of obtaining pick-up image from the image capture optical system will convert a data converters with reference to image in order to the CAD data of retouching mask pattern to, and one compares with the controller of check pattern defective image comparer and the whole device of a control with pick-up image and with reference to image.
In above-mentioned light shield testing fixture, the platform that is placed with light shield can move, and image capture optical system and image input block then can capture the image of a picture of pattern on the light shield.The image that obtains thus is sent to the image comparer.On the other hand, with reference to image tentatively by the CAD data in the conversion of data converters and obtain, and be sent to the image comparer synchronously with image.The image comparer will be compared to check defective with reference to image and this image.
See also Fig. 3, the light shield testing fixture comprises XY platform 3 and this mask pattern image that is positioned over light shield on the XY platform 3 of acquisition in order to the placement light shield and captures optical system as pick-up image.The image capture optical system comprises a laser scanning optical system 4 and a luminescence detector 5.One image input divider 6 then a picture ground distributes picture of pattern image of acquisition, to be sent to a plurality of image comparer 71-74 with taking over.Each image comparer 71-74 produces one with reference to image and check pattern defective.One checks that controller 1 has and will be dispensed to image comparer 71-74 in order to the CAD data of retouching mask pattern.Check that control 1 has the function that produces check result output, in order to represent by the detected defect information of image comparer 71-74.Laser scanning optical system 4, image input divider 6 and the inspection controller 1 of one master controller, 2 control XY platforms 3, image capture optical system.
When checking beginning, image capture optical system (laser scanning optical system 4 and luminescence detector 5) and image input divider 6 are followed a picture ground pick-up image with a picture, in the mode of taking over switching by channel image are delivered to image comparer 71-74.Each image comparer 71-74 also will check that the reference image (CAD data) that controller 1 sends here compares with the inspection defective with pick-up image.When pick-up image was dispensed to last channel, image input divider 6 came back to first channel.Then, begin another again and distribute circulation.Therefore, each image comparer 71-74 carries out a series of defect inspection action in a cycle period.When the number of channel increased, each image comparer 71-74 can have long processing time.
See also Fig. 4, master controller is sent an instruction and is made XY platform 3 and laser scanning optical system 4 beginning pick-up images.First to the 8th picture system of first test zone that is positioned over the light shield of XY platform 3 obtains via following mode.XY platform 3 moves on directions X with constant speed, and on each default amount of movement on the directions X, laser scanning optical system 4 uses a laser beam in the enterprising line scanning of Y direction.One emission light is detected to obtain a bidimensional image by luminescence detector 5.Then, second test zone is obtained XY platform 3 is moving to an interval of presetting on the Y direction after in the same way.After repeating above-mentioned a series of operation, the image on whole light shield surface is captured.These images of obtaining are detected and deliver to image input divider 6 by luminescence detector 5.
At this moment, be written into two pictures simultaneously, so this is the number that must get capable double line for fear of following problem in each part that obtains double line common in the picture with respect to each adjacent pictures.Each adjacent pictures system is handled by two different comparers among the image comparer 71-74.If any defective occurs at the intersection of two pictures, the information of its near zone can be lost, and defective also thereby can't be found out.
The operation of image comparer 71 below will be described, image comparer 72-74 is in the different time also operation in an identical manner.When checking the action beginning, the take CAD data of first picture of image comparer 71 is launched into a bit map (bit map) with it, and carries out gradually layer and handle (gradation treatment) to produce with reference to image.Gradually the purpose of layer processing makes with reference to image and can compare to carry out defect inspection with pick-up image, and the result of defect inspection delivers to and checks controller 1.Check that double line number that controller 1 will capture picture is included in and consider the back coming the defect inspection result of self imaging comparer 71-74 comprehensive, and produce the defect information of whole light shield and export.
After the defect information that focuses on whole large scale light shield of large scale light shield base material acceptable defect location of the present invention and light shield production method is read out, can divide into the two-part defect information of critical area and non-critical areas.So-called critical area is meant can not received defective locations, and for example on the conductive layer pattern light shield, a defective locations is arranged in conductive layer connecting line pattern just, and this will cause the open circuit of connecting line or the problem that opens circuit to produce, so be can not received defective locations.And non-critical areas be meant can received defective locations, for example on the conductive layer pattern light shield, a defective locations can't influence conductive layer connecting line pattern, also can successive process not impacted simultaneously, be regarded as this moment can received defective locations.Utilize above-mentioned differentiation mode to large scale mask defect information, only need the defective of critical area is repaired, like this, the number of times of the required repairing of mask defect will significantly reduce, therefore can reduce production costs and reduce the production time.Wanting ben be, judges that a mask defect is the identification standard that belongs to critical area or non-critical areas, decides by whether influencing the overall process yield, but not only considers the position of this mask defect at this light shield.
Above-mentioned mode can also be used on the fair receipts standard of large scale light shield base material " blank light shield ", that is through the light shield base material behind the light shield testing fixture, if defective locations all is positioned at non-critical areas, then this light shield base material is regarded as and can accepts.Otherwise if there is a defective locations to be positioned on the critical area, then this light shield base material is regarded as unacceptable.Thus, the supply of large scale light shield base material will have more elasticity.
See also Fig. 5, be the process flow diagram of large scale light shield base material acceptable defect location of the present invention.At first, light shield base material (blank light shield) is placed light shield check system (step 501).The acquisition of light shield check system is also compared light shield base material image, and exports the defect information (step 503) of whole light shield base material.Next be to be positioned at critical area or non-critical areas (step 505) for the defective of judging light shield base material (blank light shield).If defective locations all is positioned at non-critical areas, then this light shield base material is regarded as accepting (step 507).Otherwise if there is a defective locations to be positioned on the critical area 506, then this light shield base material is regarded as unacceptable (step 509).Aforesaid step 505 also can be revised the light shield check system and finish in the lump when exporting the defect information of whole light shield base material.
See also Fig. 6, be the process flow diagram of large scale light shield production method of the present invention.At first, light shield before not repairing after the etching is placed light shield check system (step 601).The light shield check system is compared light shield image and CAD information, and exports the defect information (step 603) of whole light shield.Next be to be positioned at critical area or non-critical areas (step 605) for the defective of judging light shield.Light shield is delivered to the light shield mending system, and the mask defect that is positioned at critical area is repaired (step 607).Repeating step 601-607 all repairs up to all mask defects that are positioned at critical area and to finish (step 609).Aforesaid step 605 also can be revised the light shield check system and finish in the lump when exporting the defect information of whole light shield.
Even the present invention system is described by enumerating several preferred embodiments, but the present invention is not limited to the embodiment that enumerated.Though the specific embodiment of before enumerating and narrating, apparently, other does not break away under the disclosed spirit, and the equivalence of being finished changes or modifies, and all should be included in protection scope of the present invention.In addition, all other do not break away under the disclosed spirit, and other that finished is similar and approximate to be changed or modification, also all is included in protection scope of the present invention.Should explain scope of the present invention with the widest definition simultaneously, use and comprise all modifications and similar structures.
Claims (8)
1, a kind of method of large scale light shield base material acceptable defect location comprises:
Place a light shield base material in a light shield check system;
Capture this light shield base material image in this light shield check system;
This light shield check system is compared this light shield base material image;
The defective locations of exporting this light shield base material is in this light shield check system; And
Judge the defective locations of this light shield base material; Wherein when this defective locations all was positioned at non-critical areas, this light shield base material can be accepted.
2, the method for large scale light shield base material acceptable defect location as claimed in claim 1 judges that wherein the step of the defective locations of this light shield base material is finished in this light shield check system.
3, the method for large scale light shield base material acceptable defect location as claimed in claim 1 or 2, wherein this light shield check system adjacent pictures of capturing this light shield base material image is overlapped.
4, the method for large scale light shield base material acceptable defect location as claimed in claim 1 or 2, wherein this non-critical areas refers to can not reduce the position of overall process yield.
5, a kind of method of large scale light shield production comprises:
Repair preceding light shield in a light shield check system after placing an etching;
Capture this light shield image in this light shield check system;
This light shield image of comparison in this light shield check system;
The defective locations of exporting this light shield is in this light shield check system;
Judge that this light shield is positioned at the defective locations of critical area; And
Repair this light shield and be positioned at the defective of critical area in a light shield mending system.
6, the method for large scale light shield production as claimed in claim 1 judges that wherein the step of the defective locations of this light shield is finished in this light shield check system.
7, the method for producing as claim 5 or 6 described large scale light shields, wherein this light shield check system adjacent pictures of capturing this light shield image is overlapped.
8, as the method for claim 5 or 6 described large scale light shields productions, wherein this critical area is meant the position that can reduce the overall process yield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200410037315XA CN1690847A (en) | 2004-04-27 | 2004-04-27 | Method for acceptable defect location for large size light mask substrate and production of light mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200410037315XA CN1690847A (en) | 2004-04-27 | 2004-04-27 | Method for acceptable defect location for large size light mask substrate and production of light mask |
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| Publication Number | Publication Date |
|---|---|
| CN1690847A true CN1690847A (en) | 2005-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200410037315XA Pending CN1690847A (en) | 2004-04-27 | 2004-04-27 | Method for acceptable defect location for large size light mask substrate and production of light mask |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101925977B (en) * | 2008-01-30 | 2013-02-27 | 韩国标准科学研究院 | Apparatus for repairing photomask and repairing method using same |
| CN110161800A (en) * | 2019-04-26 | 2019-08-23 | 信利光电股份有限公司 | A kind of light shield damage rehabilitation method |
-
2004
- 2004-04-27 CN CNA200410037315XA patent/CN1690847A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101925977B (en) * | 2008-01-30 | 2013-02-27 | 韩国标准科学研究院 | Apparatus for repairing photomask and repairing method using same |
| CN110161800A (en) * | 2019-04-26 | 2019-08-23 | 信利光电股份有限公司 | A kind of light shield damage rehabilitation method |
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Open date: 20051102 |