CN1688011A - Method for improving nano-carbno tube film cold cathode field transmitting uniformity - Google Patents
Method for improving nano-carbno tube film cold cathode field transmitting uniformity Download PDFInfo
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- CN1688011A CN1688011A CN 200510034772 CN200510034772A CN1688011A CN 1688011 A CN1688011 A CN 1688011A CN 200510034772 CN200510034772 CN 200510034772 CN 200510034772 A CN200510034772 A CN 200510034772A CN 1688011 A CN1688011 A CN 1688011A
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- cold cathode
- tube film
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- tube
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- 238000000034 method Methods 0.000 title claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000002041 carbon nanotube Substances 0.000 claims description 31
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 31
- 239000002238 carbon nanotube film Substances 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000010891 electric arc Methods 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000000608 laser ablation Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 238000004626 scanning electron microscopy Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
This invention discloses a method for improving the uniformity of carbon nm tube film cold-cathode field emit characterizing in taking the carbon nm tube film as the cold cathode, a conductor as the anode fixing their relative positions with a pre-determined gap under the vacuum environment, adding positive voltage at the anode to generate field emit current till reaching to a current constant value of striking the film surface projection and continuing at the value, which can reduce the working voltage of the cathode and avoid short circuit of the cathode with other electrodes.
Description
Technical field
The carbon nano-tube that the present invention relates in the microelectronic vacuum field is used, and is a kind of method of improving nano-carbno tube film cold cathode field transmitting uniformity.
Background technology
Carbon nano-tube is a kind of nano material with unique physical chemical property, and carbon nano-tube film has been used as the negative electrode of Field Emission Display, pixel pipe, cold light source.But the field transmitting uniformity of carbon nano-tube thin film cathode never is well solved, so that the employing carbon nano-tube film makes the field emission display of negative electrode and the uniformity of light source device never is well solved.Simultaneously, because the height difference of carbon nano-tube in the nano-carbno tube film cold cathode, make under a lot of applicable cases, negative electrode easily and control electrode be short-circuited.Still do not have good technology or method at present and solve the problems referred to above.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, provide a kind of, make the consistent method of each nanotube height trend, in order to improve the carbon nano-tube film field transmitting uniformity and to reduce its operating voltage by the protrusion of surface of fusing carbon nano-tube film.
A kind of method of improving nano-carbno tube film cold cathode field transmitting uniformity of the present invention, it comprises following processing step: under vacuum environment, make cold cathode with carbon nano-tube film, make anode with conducting objects, both are with the fixing position toward each other of predetermined space; Add positive voltage at anode, produce an emission current until the current constant value that reaches the protrusion of surface of fusing carbon nano-tube film, and with the definite value time remaining.
Processed cold cathode is to use the single wall of method preparations such as chemical vapour deposition technique (CVD), laser ablation, arc discharge, silk screen printing, spin coating or the carbon nano-tube cold cathode of many walls.Nano-carbno tube film cold cathode is prepared on the conductive substrates.The anode conducting thing can be metal, silicon, indium tin oxide target glass, alloy, as stainless steel etc.
The vacuum degree of described vacuum environment is higher than 1.0 * 10
-3Pa; The spacing distance of described anode and carbon nano-tube cold cathode is 1 μ m～1cm; Described positive voltage is 10V～10kV; The density of described electric current is 1mA/cm
2～6A/cm
2The described definite value processing time is 1s～1hr.
Vacuum degree is high more, causes the destruction of carbon nano-tube film more little by residual gas molecule ion bombardment, and the effect of big current processing is good more, and vacuum degree is lower than 1.0 * 10
-3Pa is easy to the destroying carbon nanometer tube film, so vacuum degree will be higher than 1.0 * 10
-3Pa.
Theoretically, the distance of anode and negative electrode not simultaneously, the effect that obtains is the same.Institute's making alive value difference when difference is to handle.When distance was big, it was just high to handle required voltage.For example, for the relatively poor carbon nano-tube film of field emission characteristic, when adopting the spacing of 1cm, voltage will reach 10kV.Voltage in order to reduce to handle can reduce the distance of anode and negative electrode, and when distance reduced to 1 μ m, anode voltage just had only tens volts.
The size of handling electric current is decided by the highest emission current that can bear of carbon nano-tube film, and the processing electric current is lower than this peak and gets final product.If highly higher quantity of carbon nanotubes is seldom in the carbon nano-tube film, for example have only 1, use 1mA/cm this moment
2Current density just can handle.So minimum processing electric current is 1mA/cm
2And the highest emission current of some carbon nano-tube film is very high, can reach several A/cm
2So, must use high processing electric current.
Experiment showed, for individual other carbon nano-tube film, the very little carbon nano-tube film of area for example, higher quantity of carbon nanotubes seldom, alive duration 1s just can be removed, so the shortest processing time is 1s.And the processing time is long more, and then treatment effect is obvious more, but handles the J-V characteristic meeting phase strain differential of back carbon nano-tube film.Take all factors into consideration the effect and the efficient of processing, the longest 1hr that is generally of processing time.
In above-mentioned processing procedure, in order to improve treatment effeciency, can handle simultaneously, thereby realize batch process a plurality of carbon nano-tube cold cathodes.
By above-mentioned processing step, the carbon nano-tube of carbon nano-tube film protrusion of surface is produced Joule heat by big field emission current and fuses.The carbon nano-tube height trend on carbon nano-tube film surface is consistent, and its field transmitting uniformity improves.
The nano-carbno tube film cold cathode that uses method of the present invention to make can be widely used in Field Emission Display, cold cathode luminous source etc., owing to handle its surperficial carbon nano-tube height unanimity of back, so when using, can reduce the distance of negative electrode and control electrode, thereby reduce the operating voltage of nano-carbno tube film cold cathode; Simultaneously owing to the outstanding carbon nano-tube in nano-carbno tube film cold cathode surface is removed, so can avoid carbon nanotube cathod and other electric pole short circuits effectively.
Description of drawings
Fig. 1 is a treatment process device schematic diagram;
Fig. 2 (a) and Fig. 2 (c) handle the SEM photo of the surface topography of preceding nano-carbno tube film cold cathode for adopting method of the present invention;
Fig. 2 (b) and Fig. 2 (d) handle the SEM photo of the surface topography of back nano-carbno tube film cold cathode for adopting method of the present invention;
Fig. 3 (a) handles the field emission picture (dotted line is represented the size of sample) of preceding nano-carbno tube film cold cathode for adopting method of the present invention;
Fig. 3 (b) handles the field emission picture (dotted line is represented the size of sample) of back nano-carbno tube film cold cathode for adopting method of the present invention;
Fig. 4 handles the J-V characteristic curve of front and back nano-carbno tube film cold cathode for adopting method of the present invention;
Photo when Fig. 5 does for the pixel plumber who adopts method processed carbon nanotubes film cold cathode of the present invention.
Wherein: anode 1, cold cathode 2
Embodiment
How the present embodiment accompanying drawings adopts method of the present invention that a kind of nano-carbno tube film cold cathode is handled to improve its field-causing electron emission uniformity.The carbon nano-tube film that present embodiment will give after how will handling is applied to cold cathode pixel pipe to reduce the operating voltage of pixel pipe.
The carbon nano-tube thin film cathode that present embodiment is handled is to adopt hot CVD method carbon nanotubes grown film on the stainless steel disk.Adopt scanning electron microscopy (SEM) to observe the surface topography of the carbon nano-tube before handling, its typical SEM photo can find that the carbon nano-tube height on cold cathode surface is variant shown in Fig. 2 (a) and Fig. 2 (c).The height of most of carbon nano-tube is about 20 μ m, and the length of the carbon nano-tube of some projection is up to 60 μ m, and only a few is up to 80 μ m.Field emission characteristic before handling can be measured with the transparent anode method.Sample is placed high vacuum, and (vacuum degree is higher than 1.0 * 10
-5Pa), adopt transparent ITO electro-conductive glass, current density one voltage (J-V) characteristic of record carbon nano-tube thin film cathode field emission and an emission picture as anode.Distance between anode and the carbon nano-tube thin film cathode is 100 μ m.The J-V characteristic curve of measuring gained is shown in solid side's point curve of Fig. 4, and (corresponding current density is 10 μ A/cm to open electric field
2) and threshold field (corresponding current density is 10mA/cm
2) be respectively 2.9MV/m and 5.4MV/m.When emission current was 300 μ A, its emission picture was shown in Fig. 3 (a), and emission location density has only 7.0 * 10
2/ cm
2
Adopt processing method of the present invention that above-mentioned carbon nano-tube is handled.Adopt molybdenum sheet as anode, the distance of molybdenum sheet and carbon nano-tube thin film cathode sample is about 100 μ m.Add the voltage of 1kV at anode, (corresponding current density is 55mA/cm to make an emission current reach 1.0mA
2), and kept 5 minutes.
Adopt scanning electron microscopy (SEM) to observe the surface topography of the sample after handling.Typical SEM photo is shown in Fig. 2 (b) and Fig. 2 (d), and the height that can find the carbon nano-tube on the cathode surface is all below 30 μ m, and unanimity highly.Adopt transparent ITO electro-conductive glass to measure a J-V characteristic and an emission picture of the carbon nano-tube thin film cathode after handling as anode.The J-V characteristic curve of gained is shown in the black triangle curve of Fig. 4, and (corresponding current density is 10 μ A/cm to obtain opening electric field from figure
2) and threshold field (corresponding current density is 10mA/cm
2) be respectively 3.8MV/m and 6.9MV/m, respectively than about 1.0MV/m that raise before handling.When emission current was 300 μ A, its emission picture was shown in Fig. 3 (b), and emission location density is 3.6 * 10
3/ cm
2, improved an order of magnitude than (Fig. 3 (a)) before handling.The above results shows, adopts method of the present invention can improve the field transmitting uniformity of nano-carbno tube film cold cathode effectively.
Below introduce above-mentioned processed carbon nanotubes film cathode is applied to the pixel pipe to reduce its operating voltage.Owing to the carbon nano-tube height unanimity on carbon nano-tube film surface, therefore can reduce distance to the 10 μ m of grid and negative electrode, still can avoid being short-circuited between grid and the negative electrode, thereby reduce cold cathode luminous tube cut-in voltage and operating voltage.Photo when pixel plumber does can be observed luminous uniformly as shown in Figure 5.The J-V characteristic curve of pixel pipe is shown in the circle point curve of Fig. 4, and (corresponding current density is 10 μ A/cm to cut-in voltage
2) have only 150V, (corresponding current density is 7.5mA/cm to operating voltage
2) have only 300V.
Claims (7)
1. method of improving nano-carbno tube film cold cathode field transmitting uniformity is characterized in that comprising following processing step:
(a) make cold cathode (2) with carbon nano-tube film, make anode (1) with conducting objects, both are with the fixing position toward each other of predetermined space;
(b) in vacuum environment, add positive voltage at anode, produce an emission current.Increase described current strength, when electrical current heat can fuse the carbon nano-tube of carbon nano-tube film protrusion of surface, stop to increase, and continue the definite value time with this intensity.
2. by the described a kind of method of improving nano-carbno tube film cold cathode field transmitting uniformity of claim 1, it is characterized in that: described cold cathode is with the single wall of methods such as chemical vapour deposition technique, laser ablation, arc discharge, silk screen printing, spin coating preparation or the carbon nano-tube cold cathode of many walls.
3. by the described a kind of method of improving nano-carbno tube film cold cathode field transmitting uniformity of claim 1, it is characterized in that: described conducting objects can be metal, silicon, indium tin oxide target glass, alloy.
4. by the described a kind of method of improving nano-carbno tube film cold cathode field transmitting uniformity of claim 1, it is characterized in that: the vacuum degree of described vacuum environment is higher than 1.0 * 10
-3Pa.
5. by the described a kind of method of improving nano-carbno tube film cold cathode field transmitting uniformity of claim 1, it is characterized in that: the spacing distance of described anode (1) and nano-carbno tube film cold cathode (2) is 1 μ m～1cm.
6. by the described a kind of method of improving nano-carbno tube film cold cathode field transmitting uniformity of claim 1, it is characterized in that: described positive voltage is 10V～10kV; Described current density is 1mA/cm
2～6A/cm
2
7. by the described a kind of method of improving nano-carbno tube film cold cathode field transmitting uniformity of claim 1, it is characterized in that: the described definite value time is 1s～1hr.
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|---|---|---|---|
| CN 200510034772 CN1688011A (en) | 2005-05-25 | 2005-05-25 | Method for improving nano-carbno tube film cold cathode field transmitting uniformity |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510034772 CN1688011A (en) | 2005-05-25 | 2005-05-25 | Method for improving nano-carbno tube film cold cathode field transmitting uniformity |
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|---|---|
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101049906B (en) * | 2007-05-09 | 2010-08-04 | 中山大学 | Method for fabricating Nano pointed cone |
| CN101540253B (en) * | 2008-03-19 | 2011-03-23 | 清华大学 | Method for preparing field-emission electron source |
| CN101425438B (en) * | 2007-11-02 | 2011-03-30 | 鸿富锦精密工业（深圳）有限公司 | Producing method for field emission type electron source |
| CN102231351A (en) * | 2011-04-26 | 2011-11-02 | 中山大学 | Post-processing approach for improving lager-area carbon nanotube cathode field emission uniformity |
| CN101538031B (en) * | 2008-03-19 | 2012-05-23 | 清华大学 | Carbon nano tube needlepoint and method for preparing same |
| CN105668513A (en) * | 2016-01-15 | 2016-06-15 | 中山大学 | Method and device for improving crystallinity through field emission self-heating inducing nanometer structure |
-
2005
- 2005-05-25 CN CN 200510034772 patent/CN1688011A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101049906B (en) * | 2007-05-09 | 2010-08-04 | 中山大学 | Method for fabricating Nano pointed cone |
| CN101425438B (en) * | 2007-11-02 | 2011-03-30 | 鸿富锦精密工业（深圳）有限公司 | Producing method for field emission type electron source |
| US7988515B2 (en) | 2007-11-02 | 2011-08-02 | Tsinghua University | Method for manufacturing field emission electron source having carbon nanotubes |
| CN101540253B (en) * | 2008-03-19 | 2011-03-23 | 清华大学 | Method for preparing field-emission electron source |
| CN101538031B (en) * | 2008-03-19 | 2012-05-23 | 清华大学 | Carbon nano tube needlepoint and method for preparing same |
| CN102231351A (en) * | 2011-04-26 | 2011-11-02 | 中山大学 | Post-processing approach for improving lager-area carbon nanotube cathode field emission uniformity |
| CN105668513A (en) * | 2016-01-15 | 2016-06-15 | 中山大学 | Method and device for improving crystallinity through field emission self-heating inducing nanometer structure |
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