CN1679173A - Gate electrode and manufacturing method thereof - Google Patents
Gate electrode and manufacturing method thereof Download PDFInfo
- Publication number
- CN1679173A CN1679173A CN 03819984 CN03819984A CN1679173A CN 1679173 A CN1679173 A CN 1679173A CN 03819984 CN03819984 CN 03819984 CN 03819984 A CN03819984 A CN 03819984A CN 1679173 A CN1679173 A CN 1679173A
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- gate electrode
- opening
- aforementioned
- electron beam
- manufacture method
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- LGRFSURHDFAFJT-UHFFFAOYSA-N phthalic anhydride Chemical compound C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- GKPGJMUBFVSCRE-UHFFFAOYSA-N propane-1,2-diol;urea Chemical compound NC(N)=O.CC(O)CO GKPGJMUBFVSCRE-UHFFFAOYSA-N 0.000 description 1
- 239000003380 propellant Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 235000005875 quercetin Nutrition 0.000 description 1
- 229960001285 quercetin Drugs 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003333 secondary alcohols Chemical class 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- NVBFHJWHLNUMCV-UHFFFAOYSA-N sulfamide Chemical compound NS(N)(=O)=O NVBFHJWHLNUMCV-UHFFFAOYSA-N 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 239000001648 tannin Substances 0.000 description 1
- 235000018553 tannin Nutrition 0.000 description 1
- 229920001864 tannin Polymers 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Substances [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- DQFBYFPFKXHELB-VAWYXSNFSA-N trans-chalcone Chemical compound C=1C=CC=CC=1C(=O)\C=C\C1=CC=CC=C1 DQFBYFPFKXHELB-VAWYXSNFSA-N 0.000 description 1
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
A method for fabricating a micro gate electrode by reducing the dimensions of an opening formed by a conventional electron beam lithography by increasing the thickness of the opening. The method comprises a multilayer resist forming step of forming a multilayer resist including an electron beam resist layer as a lowermost layer on a gate electrode forming surface, an opening forming step of forming an opening extending through the other layers than the lower most layer, a gate electrode opening forming step of forming an opening for a gate electrode in the lowermost layer, a gate electrode opening reducing step of selectively reducing the opening for the gate electrode, and a gate electrode forming step of forming the gate electrode in the opening for the gate electrode. The gate electrode opening reducing step of a preferable mode is such that a material for increasing the thickness of a resist pattern is applied to the surface of the lowermost layer at least once to reduce the dimensions of the opening for the gate electrode. Another preferable mode includes an electron beam directing step of directing an electron beam to the vicinity of the opening for the gate electrode before the gate electrode opening reducing step.
Description
Technical field
The present invention relates to a kind of manufacture method of gate electrode, the gate electrode of manufacture method manufacturing that utilizes this gate electrode and semiconductor device and the manufacture method thereof that adopts this gate electrode; the manufacture method of this gate electrode is dwindled opening size by the gate electrode that utilizes common electron beam exposure to form is thickened with the diaphragm opening; can make fine gate electrode expeditiously, this gate electrode excellent in high-frequency characteristics, be applicable to as the transmitting-receiving of submillimeter millimere-wave band electric wave with so that high speed signal handle useful field-effect transistor with (optical communication with) device.
Background technology
The field-effect transistor of excellent in high-frequency characteristics is handled with (optical communication is used) device useful as the transmitting-receiving of submillimeter millimere-wave band electric wave with device and even high speed signal.Wherein, in the exploitation of the employed gate electrode of device of special requirement excellent in high-frequency characteristics, extensively utilize electron beam exposure and form grid imperceptibly and form and use opening, and shorten the research of grid length as far as possible.
In the past, form grid in order to utilize electron beam exposure imperceptibly and form and to use opening, thought needs: the miniaturization of the size of the electron beam that (1) will be used to expose own, expose imperceptibly; (2) heat-treat with the diaphragm of opening forming above-mentioned grid formation, and make its thermal softening, opening size is dwindled, etc.
But in these cases, there are the following problems.That is, under the situation of above-mentioned (1), though can utilize existing technology with the beam diameter miniaturization to 0.04 μ m degree, if the manufacturing stability when considering integrated several thousand transistors etc., also hard to say is mature technique very.In addition, under the situation of above-mentioned (2), the reduction volume of the opening size that stably obtains surpasses the dwindling of significantly opening size of this value in 0.04 μ m, also have problems aspect uniformity, can not be towards batch process.In addition, original identical opening is difficult to be used in the big groove of opening size difference and forms with opening and gate electrode and form with in the opening.
Summary of the invention
The objective of the invention is to, provide a kind of and dwindle opening size, can make the manufacture method of the gate electrode of micro gate electrode expeditiously by thickening the opening that utilizes common electron beam exposure to form.In addition, the objective of the invention is to, provide a kind of utilize this gate electrode the manufacture method manufacturing, excellent in high-frequency characteristics, be applicable to as the transmitting-receiving of submillimeter millimere-wave band electric wave with so that high speed signal handle the gate electrode of the field-effect transistor useful with (optical communication with) device.In addition, the objective of the invention is to, a kind of high performance semiconductor device and high efficiency manufacture method thereof that adopts this gate electrode is provided.
The manufacture method of gate electrode of the present invention is characterized in that comprising: on gate electrode formation face, form the lamination diaphragm formation operation that comprises the lamination diaphragm of electron beam protective layer at least at orlop; The opening that forms opening on the layer beyond aforementioned orlop forms operation; Form gate electrode at the aforementioned orlop that exposes from aforementioned opening and form operation with opening with the gate electrode of opening; Optionally dwindle this gate electrode and dwindle operation with opening with the gate electrode of opening; Form operation at this gate electrode with the gate electrode that opening forms gate electrode.
In the manufacture method of gate electrode of the present invention, form in the operation at aforementioned lamination diaphragm, on gate electrode formation face, form the lamination diaphragm that comprises the electron beam protective layer at least at orlop.Form in the operation at aforementioned opening, the layer beyond aforementioned orlop forms opening.Form in the operation with opening at aforementioned gate electrode, form the gate electrode opening at the aforementioned orlop that exposes from aforementioned opening.Dwindle in the operation with opening at aforementioned gate electrode, optionally dwindle aforementioned gate electrode opening.Form in the operation at aforementioned gate electrode, form gate electrode with opening at aforementioned gate electrode.Thus, make high-performance, fine gate electrode.
In addition, before aforementioned gate electrode dwindles operation with opening, comprise and make electron beam incident under near the electron beam incident operation situation the gate electrode usefulness opening, by changing the amount of incident of this electron beam, can regulate aforementioned gate electrode dwindles the opening size of the gate electrode usefulness opening in the operation with opening reduction volume.
In addition, after aforementioned gate electrode forms operation with opening, before aforementioned gate electrode dwindles operation with opening, comprising with gate electrode uses opening as mask, the gate electrode formation face that the driving gate electrode forms face tunnels under the situation of operation, directly to use opening as mask with the gate electrode that opening forms the broad that forms in the operation at gate electrode, form grooved area, then, gate electrode is dwindled operation with opening proceed to desirable gate electrode opening, easily in grooved area, not cause the mode of offset, on the position of regulation, form gate electrode thus.
Gate electrode of the present invention is characterized in that, makes by the manufacture method of gate electrode of the present invention.This gate electrode owing to have the short and fine structure of grid length, so excellent in high-frequency characteristics, can be applicable to as the transmitting-receiving of submillimeter millimere-wave band electric wave with so that high speed signal handle useful field-effect transistor with (optical communication with) device.
The manufacture method of semiconductor device of the present invention is characterized in that, comprises the manufacture method of gate electrode of the present invention.In the manufacture method of semiconductor device of the present invention, owing to can form fine gate electrode, field-effect transistor that therefore can stably integrated a plurality of these gate electrodes of employing, and make high performance semiconductor device expeditiously.In addition, because manufacture method by aforementioned gate electrode, the different a plurality of gate electrodes of miniaturization degree can be formed, a plurality of offset gates of any adjusting amount of bias can also be formed, therefore can high efficiency and make multi-functional and high performance semiconductor device easily.
Semiconductor device of the present invention is characterized in that, makes by the manufacture method of aforementioned semiconductor device.Semiconductor device of the present invention owing to have the micro gate electrode that is suitable for field-effect transistor etc., is high performance therefore.In addition, under the situation with the different a plurality of gate electrodes of miniaturization degree, or having under the situation of a plurality of offset gates of any adjusting amount of bias, is multi-functional and high performance.
Description of drawings
Fig. 1 is the curve chart of the relation of expression electron beam incident amount and diaphragm amount of swelling.
Fig. 2 is the diagrammatic illustration figure of an example that is used to illustrate the manufacture method of gate electrode of the present invention.
Fig. 3 is the diagrammatic illustration figure of an example of electron beam incident operation that is used for illustrating the manufacture method of gate electrode of the present invention.
Fig. 4 A, 4B, 4C and 4D are the manufacture methods that is used to illustrate by gate electrode of the present invention, make the diagrammatic illustration figure of an example of gate electrode of the present invention (adopt 1 opening, do not need the involutory example of aperture position).
Fig. 5 A, 5B, 5C and 5D are the manufacture methods that is used to illustrate by gate electrode of the present invention, make the diagrammatic illustration figure of an example of gate electrode of the present invention (offset gate).
Embodiment
(gate electrode and manufacture method thereof)
The manufacture method of gate electrode of the present invention; comprise the lamination diaphragm form operation, opening form operation, gate electrode with opening form operation, gate electrode with opening dwindle operation, gate electrode forms operation, comprises suitable as required other operation of selecting in addition.
Gate electrode of the present invention is made by the manufacture method of gate electrode of the present invention.Below, by the manufacture method of gate electrode of the present invention is described, illustrate the content of gate electrode of the present invention.
-lamination diaphragm formation operation-
Aforementioned lamination diaphragm forms operation, is on gate electrode formation face, forms the operation that comprises the lamination diaphragm of electron beam protective layer at least at orlop.
Form face as aforementioned gate electrode, do not limit especially, can select according to purpose is suitable, for example, the gate electrode formation face in the various semiconductor devices etc. of can giving an example, but the transmitting-receiving that is suitable as in these, submillimeter millimere-wave band electric wave is especially for example used and even the gate electrode of high speed signal processing useful field-effect transistor with (optical communication is used) device forms face.
Preferably, on aforementioned gate electrode formation face, be formed with Ohmic electrode etc.As this Ohmic electrode, do not limit especially, can from known Ohmic electrode, suit to select, for example, can be for example on the semiconductive GaAs substrate, the electrode of stacked formation resilient coating, InGaAs electronics mobile layer, AlGaAs electron supply layer, GaAs conductive formation etc.The lamination of each layer in this Ohmic electrode for example, can utilize vacuum vapour deposition to wait and carry out.For electric resolution element each other, can form the active region by injecting oxygen.
In addition, also can form nitride films such as SiN, to improve the zygosity of this gate electrode with formation face and aforementioned lamination diaphragm at aforementioned gate electrode with on the formation face.
In addition, also can also can form grooved area at aforementioned gate electrode with being formed with conductive formation on the formation face by this conductive formation part of removals such as etch processes.
As aforementioned lamination diaphragm, except that at least orlop comprises the electron beam protective layer, do not limit especially, can be according to suitable its stacked number, diaphragm kind, the thickness of each layer, the bore of opening etc. selected of purpose.
Structure as aforementioned lamination diaphragm; do not limit especially; can select according to purpose is suitable, but be particularly suitable for for example, peel off the intermediate layer of easiness and 3-tier architecture that the superiors constitute etc. with orlop, the realization of opening by the gate electrode of the foundation that is formed for forming gate electrode.
As aforementioned undermost material, so long as the electron beam diaphragm does not limit especially; can select according to purpose is suitable; but preferably the material that can thicken by aforementioned diaphragm pattern thickening material for example, is more preferably polymethyl methacrylate (PMMA) class diaphragm.
At aforementioned orlop is under the situation of polymethyl methacrylate (PMMA) class diaphragm, advantage be by aforementioned diaphragm pattern thickening material produce to thicken effect good.
Material as aforementioned intermediate layer; do not limit especially; can select according to purpose is suitable; but the material that can not thicken preferably by aforementioned diaphragm pattern thickening material; consider from the viewpoint of the top grid portion that forms aforementioned gate electrode effectively; but be more preferably the material of lateral etch, for example, preferably gather polydimethyl glutarimide (PMGI) class diaphragm etc.
Material as the aforementioned the superiors; do not limit especially; can select according to purpose is suitable; compare with the aforementioned orlop of opening with the aforementioned gate electrode of formation; the low material of degree that thickens by aforementioned diaphragm pattern thickening material preferably; can from known electron beam diaphragm, light diaphragm etc., suit to select, but preferably contain the diaphragm that contains poly styrene polymer etc. of poly styrene polymer and allyl resin.
As the material of each layer in the aforementioned lamination protective layer, can suit to adopt product sold on the market.
Each layer in the aforementioned lamination protective layer, can by be coated with, the diaphragm material of dry this layer waits and forms.In addition,, do not limit especially, can from known method, suit to select according to purpose as the method for aforementioned coating, for example, the spin-coating method etc. of can giving an example.
In the present invention; as aforementioned lamination protective layer; preferably aforementioned orlop is formed by polymethyl methacrylate (PMMA) class diaphragm; aforementioned intermediate layer is formed by aforementioned poly-polydimethyl glutarimide (PMGI) class diaphragm; the aforementioned the superiors are by the film formed 3-tier architecture of the protection that contains the aforementioned polystyrene polymer; can stably form aforementioned gate electrode with opening (fine gate openings), can stablize and make aforementioned gate electrode expeditiously.
-opening formation operation-
Aforementioned opening forms operation, is the operation that forms opening on the layer beyond aforementioned orlop.
Form the method for opening as the layer beyond aforementioned orlop; do not limit especially; can select according to purpose is suitable; for example; have at aforementioned lamination protective layer under the situation of the 3-tier architecture that constitutes by aforementioned orlop, aforementioned intermediate layer and the aforementioned the superiors; can give an example; to these the superiors; pass through electron beam exposure; in the superiors, form the superiors' opening,, alkaline development is carried out in aforementioned intermediate layer handled from aforementioned the superiors opening; and in this formation intermediate layer, intermediate layer opening, the method for this intermediate layer opening of lateral etch (part is taken in formation) simultaneously.
In addition, the exposure of aforementioned electronic bundle can adopt known electron beam lithography system to carry out.In addition, aforementioned alkaline development treatment can adopt known alkaline-based developer, waits according to known condition and carries out.
In addition, if the aforementioned intermediate layer of lateral etch (part is taken in formation) opening can be formed for forming the space of the top grid portion of gate electrode, in addition, peel off easily, so be preferred.
The opening size of the superiors' opening that forms as the aforementioned the superiors in aforementioned lamination diaphragm does not limit especially, can select according to purpose is suitable, still, and for example, preferably in 0.20～1.00 μ m degree.
-gate electrode with opening form operation-
Gate electrode forms operation with opening, is to form the operation of gate electrode with opening (fine gate openings) at aforementioned orlop.
Aforementioned gate electrode can form by carrying out electron beam exposure at aforementioned orlop with opening (fine gate openings).
As the method for aforementioned electronic bundle exposure, do not limit especially, can according to known condition, adopt known electron beam lithography system to wait and carry out according to purpose.
The gate electrode that forms by aforementioned electronic bundle exposure does not limit especially with the opening size of opening, can select according to purpose is suitable, but for example, in 0.1～0.2 μ m degree.
-gate electrode with opening dwindle operation-
Aforementioned gate electrode dwindles operation with opening, is the operation that aforementioned gate electrode is dwindled with opening.
As the method that aforementioned gate electrode is dwindled with the size of opening; do not limit especially; can select according to purpose is suitable; but particularly preferably; for example; at least carry out once by at aforementioned gate electrode with opening coating (opening formation) the diaphragm pattern thickening material that develops, make the method for the processing that this opening size (bore) dwindles.
Aforementioned diaphragm pattern thickening material; even aforementioned orlop is the neutral diaphragm material of aforementioned polymethyl methacrylate (PMMA) class diaphragm etc.; it is also good to thicken effect, can thicken expeditiously to be formed on this undermost aforementioned gate electrode opening, so be preferred.
Dwindle in the operation with opening at aforementioned gate electrode; can be fit to adopt aforementioned diaphragm pattern thickening material; in this case; if at aforementioned gate electrode with opening coating, crosslinked this diaphragm pattern thickening material; this gate electrode is thickened with opening; form the top layer at this gate electrode on opening, and dwindle the opening size (size) of this superiors' opening.Its result above separating as boundary of the electron beam that adopts, forms finer gate electrode opening when forming aforementioned the superiors opening.
In addition; at this moment; the aforementioned gate electrode amount of swelling of opening; be the reduction volume of aforementioned gate electrode with the opening size of opening; can be controlled in the desirable scope by the suitable composition of regulating aforementioned diaphragm pattern thickening material, ratio of components, use level, concentration, viscosity, coating thickness, baking temperature, stoving time etc.
As the composition of aforementioned diaphragm pattern thickening material, ratio of components, use level, concentration, viscosity etc.; do not limit especially; can select according to purpose is suitable; but from the amount of swelling of aforementioned gate electrode with opening; be that aforementioned gate electrode considers that with the viewpoint of the control of the reduction volume of the opening size of opening preferably the total content of the composition beyond the water in this diaphragm pattern thickening material is at 5～40 quality %.In addition, the reduction volume of aforementioned opening size also can wait by the concentration of the resin in the aforementioned diaphragm pattern thickening material, surfactant, crosslinking agent etc. and regulate.
---diaphragm pattern thickening material---
Aforementioned diaphragm pattern thickening material contains resin, crosslinking agent, surfactant and forms, and also contains resin, organic solvent, other one-tenth that the suitable as required water-soluble aromatic compounds of group of selecting, part contain aromatic compound in addition and grades and form.
Aforementioned diaphragm pattern thickening material is water-soluble and even alkali-soluble.
As the form of aforementioned diaphragm pattern thickening material, can be any in the aqueous solution, colloidal solution, the latax etc., but the aqueous solution preferably.
As aforementioned resin, do not limit especially, can select according to purpose is suitable, but the resin of preferably water-soluble and even alkali-soluble more preferably can produce cross-linking reaction, though or do not produce cross-linking reaction but the resin that can mix with water-soluble cross-linker.
In aforementioned resin is under the situation of water-soluble resin, as this water-soluble resin, preferably to the water miscible resin more than 25 ℃ the water 100g demonstration dissolving 0.1g.
As aforementioned water-soluble resin, for example, can enumerate polyvinyl alcohol, polyvinyl acetal, polyethylene vinyl acetate, polyacrylic acid, polyvinylpyrrolidone, polymine, poly(ethylene oxide), styrene-maleic acid, polyvinylamine, PAH, Han oxazolinyl water-soluble resin, water-soluble melamine resin, water soluble urea resin, alkyd resins, sulphamide resin etc.
In aforementioned resin is under the situation of alkali-soluble, as this buck soluble resin, preferably shows the resin of the alkali-soluble more than the dissolving 0.1g for 25 ℃ 2.38%TMAH aqueous solution 100g.
As the aforementioned bases soluble resin, for example, can enumerate novolac resin, vinyl benzene phenol resin, polyacrylic acid, polymethylacrylic acid, poly-p-hydroxybenzene acrylate, poly-p-hydroxybenzene methacrylate, their copolymer etc.
Aforementioned resin can a kind be used separately, also can 2 kinds or it is above and use.Wherein, preferably polyvinyl alcohol, polyvinyl acetal, polyethylene vinyl acetate etc.
As the content in the aforementioned diaphragm pattern thickening material of aforementioned resin, different because of the kind content of aforementioned crosslinking agent etc. etc., can not stipulate without exception, can determine according to purpose is suitable.
As aforementioned crosslinking agent, do not limit especially, can select according to purpose is suitable, but preferably produce crosslinked water-soluble cross-linked dose by heat or acid, for example, the amino class crosslinking agent of preferably giving an example.
As aforementioned amino class crosslinking agent, for example, preferably give an example melamine derivative, urea derivative, connection urea (ウ リ Le) derivative etc.These can a kind use separately, also can 2 kinds or it is above and use.
As the aforementioned urea derivative, for example, the urea of can giving an example, alkoxyl methylene urea, N-alkoxyl methylene urea, ethylidene urea, ethylidene urea carboxylic acid, their derivative etc.
As aforementioned melamine derivative, for example, the alkoxy methyl melamine of can giving an example, their derivative etc.
As aforementioned urea derivative, for example, the benzo guanamine of can giving an example, ethylene glycol connection urea, their derivative etc.
As the content in the aforementioned diaphragm pattern thickening material of aforementioned crosslinking agent, different because of the kind content of aforementioned resin etc., can not stipulate without exception, can determine according to purpose is suitable.
As aforementioned surfactants, do not limit especially, can select can give an example nonionic surfactant, cationic surfactant, anionic surfactant, amphoteric surfactant etc. according to purpose is suitable.These both can a kind use separately, also can 2 kinds or it is above and use.Wherein, never contain the viewpoint consideration of metal ion, preferably nonionic surfactant.
As aforementioned nonionic surfactant, can be fit to be selected from for example the surfactant of metal alkoxides class surfactant, fatty acid ester surfactant, amide surfactants, alcohol surfactants and ethylenediamines surfactant.In addition, as their concrete example, can give an example polyoxyethylene-polyoxypropylene condensation product compound, the polyoxyalkylene alkyl ether compound, the polyoxyethylene alkyl ether compound, the polyoxyethylene deriv compound, the sorbitan fatty acid ester compound, the glycerol fatty acid ester compound, primary alcohol ethylate compound, phenol ethylate compound, nonyl phenol ethylate compounds, octyl phenol ethylate compounds, laruyl alcohol ethylate compounds, oleyl alcohol ethylate compounds, fatty acid ester, amide-type, natural alcohols, ethylenediamines, the ethylate compounds of secondary alcohol etc.
As the aforementioned male ionic surfactant, do not limit especially, can select according to purpose is suitable, for example, the alkyl cationic surfactant of can giving an example, acid amide type level Four cationic surfactant, ester type level Four cationic surfactant etc.
As aforementioned amphoteric surfactant, do not limit especially, can select for example can give an example oxidation amine surfactant, betaines surfactant etc. according to purpose is suitable.
As the content of above surfactant in aforementioned diaphragm pattern thickening material, different because of the kind content of aforementioned resin, aforementioned crosslinking agent etc. etc., can not stipulate without exception, can select according to purpose is suitable.
If aforementioned diaphragm pattern thickening material contains the water-soluble aromatic compounds of group, then can significantly improve the elching resistant of aforementioned gate electrode, so be preferred with opening.
As aforementioned water-soluble aromatic compounds of group, so long as aromatic compound, have water-soluble, then do not limit especially, can select according to purpose is suitable, but preferably show dissolving 1g or water miscible more than it, more preferably show dissolving 3g or water miscible more than it, most preferably show dissolving 5g or the water miscible aromatic compound more than it for 25 ℃ water 100g for 25 ℃ water 100g for 25 ℃ water 100g.
As aforementioned water-soluble aromatic compounds of group, for example, can give an example polyphenolic substance, aromatic carboxy acid compound, naphthalene polyol compound, benzophenone cpd, flavonoids, porphines, water-soluble phenoxy resin, contain aromatic water colo(u)r, their derivative, their glucoside etc.These can a kind use separately, also can more than 2 kinds and use.
As aforementioned polyphenolic substance and derivative thereof, for example, can give an example catechol, anthocyanidin (pelargonidin type (4 '-hydroxyl), anthocyanidin (3 ', 4 '-dihydroxy), delphinidin type (3 ', 4 ', 5 '-trihydroxy)), flavane-3,4-glycol, furans anthocyanidin, resorcinol, resorcinol [4] aromatic hydrocarbons, pyrogallol, gallic acid, their derivative or glucoside etc.
As aforementioned aromatic carboxy acid compound and derivative thereof, for example, the salicylic acid of can giving an example, phthalandione, dihydroxy benzoic acid, tannin, their derivative or glucoside etc.
As aforementioned naphthalene polyol compound and derivative thereof, for example, the naphthalene glycol of can giving an example, naphthalene triol, their derivative or glucoside etc.
As aforementioned benzophenone cpd and derivative thereof, for example, the allizarin yellow of can giving an example, their derivative or glucoside etc.
As aforementioned flavonoids and derivative thereof, for example, can give an example flavones, isoflavones, flavanols, flavanones, flavonols, flavones-3-alcohol, dragon (オ one ロ Application), chalcone, dihydroxy chalcone, Quercetin, their derivative or glucoside etc.
Even in aforementioned water-soluble aromatic compounds of group, consider from water-soluble good angle, preferably have 2 or its above polar group, more preferably have 3 or its above polar group, most preferably have the water-soluble aromatic compounds of group of 4 or its above polar group.
About aforementioned polar group, do not limit especially, can select according to purpose is suitable, for example, can give an example hydroxyl, carboxyl, carbonyl, sulfonyl etc.
As the content of aforementioned water-soluble aromatic compounds of group in the diaphragm pattern thickening material, can be according to the kind content of aforementioned resin, aforementioned crosslinking agent etc. etc., suitablely determine.
If aforementioned diaphragm pattern thickening material contains the resin that part contains aromatic compound, then can significantly improve the elching resistant of aforementioned the superiors opening, so be preferred.
Contain the resin that aromatic compound forms as aforementioned part; do not limit especially; can select according to purpose is suitable; but preferably can produce cross-linking reaction; for example, can be fit to polyvinyl aryl acetal resin for example, polyvinyl aryl ether resin, polyvinyl aryl ester resin, their derivative etc., at least a kind of preferably from them, selecting; based on water-soluble and even alkali-soluble this point, more preferably has the resin of acetyl group with appropriateness.These can a kind use separately, also can 2 kinds or it is above and use.
As aforementioned polyvinyl aryl acetal resin, do not limit especially, can select according to purpose is suitable, for example, the β that can give an example-resorcinol acetal etc.
As aforementioned polyvinyl aryl ether resin, do not limit especially, can select according to purpose is suitable, for example, the 4-hydroxybenzyl ether etc. of can giving an example.
As aforementioned polyvinyl aryl ester resin, do not limit especially, can select according to purpose is suitable, for example, the benzoate etc. of can giving an example.
As the manufacture method of aforementioned polyvinyl aryl acetal resin, do not limit especially, can select according to purpose is suitable, for example, the suitable manufacture method that adopts known polyvinyl acetal reaction for example etc.This manufacture method for example, is under acid catalyst, make polyvinyl alcohol and, with the method for the formaldehyde generation acetal reaction of the required amount of polyvinyl alcohol stoichiometry, concrete, be fit to for example at USP5,169,897; USP5,262,270; Disclosed method in the Japanese patent laid-open 5-78414 communique etc.
Manufacture method as aforementioned polyvinyl aryl ether resin, do not limit especially, can select according to purpose is suitable, for example, can be for example under the condition of the polymerization reaction that has corresponding ethenyl aromatic yl ether monomer and vinylacetate, base catalysis, polyvinyl alcohol and have the etherification reaction (the ether synthetic reaction of Williamson) etc. of the aromatic compound of haloalkyl, particularly, being fit to for example to open 2001-40086 communique, spy the Japan Patent spy opens 2001-181383 communique, spy and opens disclosed method in the flat 6-116194 communique etc.
Manufacture method as aforementioned polyvinyl aryl ester resin, do not limit especially, can select according to purpose is suitable, for example, can be for example under the condition of the polymerization reaction that has corresponding ethenyl aromatic yl ester monomer and vinylacetate, base catalysis, the esterification of polyvinyl alcohol and aromatic carboxylic acid halide etc.
Has aromatic compound in the resin that aforementioned aromatic compound forms as part, do not limit especially, can select according to purpose is suitable, for example, be fit to compound (polycyclic aromatic series such as naphthalene, anthracene) that the aromatic benzene derivative of monocycle, pyridine derivate etc., a plurality of aromatic ring for example connect to etc.
Part has the aromatic compound in the resin that aforementioned aromatic compound forms, for example, consider from having suitable water miscible viewpoint, be fit to have 1 hydroxyl at least, the aromatic compound of functional group such as cyano group, alkoxyl, carboxyl, amino, amide groups, alkoxy carbonyl, hydroxy alkyl, carbonyl, anhydride group, lactone group, cyanate ester based, NCO, ketone group or sugar derivatives, more preferably have 1 at least from hydroxyl, amino, carbonyl, carboxyl, and the functional group that selects of the base that constitutes of their derivative.
As the mole containing ratio that has the aromatic compound in the resin that aforementioned aromatic compound forms in part, only otherwise influence elching resistant, do not limit especially, can select according to purpose is suitable, under the situation of the high elching resistant of needs, preferably at 5mol% or more than it, more preferably at 10mol% or more than it.
In addition, have the mole containing ratio of the aromatic compound in the resin that aforementioned aromatic compound forms, for example, can adopt NMR to wait and measure in part.
Have the content of resin in aforementioned diaphragm pattern thickening material that aforementioned aromatic compound forms as part, can be according to the kind content of aforementioned resin, crosslinking agent etc. etc., suitablely determine.
Aforementioned organic solvent is contained in the aforementioned diaphragm pattern thickening material by making it, can improve the dissolubilities in this diaphragm pattern thickening material such as aforementioned resin, crosslinking agent.
As aforementioned organic solvent, do not limit especially, can select according to purpose is suitable, for example, the alcohol organic solvent of can giving an example, chain ester class organic solvent, cyclic ester class organic solvent, organic solvent of ketone, chain ether organic solvent, ring-type ether organic solvent etc.
As aforementioned alcohol organic solvent, for example, can give an example methyl alcohol, ethanol, propyl alcohol, isopropyl alcohol, butanols etc.
As chain ester class organic solvent, for example, the ethyl lactate of can giving an example, propylene glycol methyl ether acetate (PGMEA) etc.
As cyclic ester class organic solvent, for example, lactone organic solvents such as the gamma-butyrolacton of can giving an example etc.
As organic solvent of ketone, for example, the organic solvent of ketone such as acetone, cyclohexanone, pentanone etc. of can giving an example.
As the chain ether organic solvent, for example, the glycol dimethyl ether etc. of can giving an example.
As the ring-type ether organic solvent, for example, can give an example oxolane, diox etc.
These organic solvents can a kind use separately, also can 2 kinds or it is above and use.Wherein, base with can fine thickening this point, preferably have the organic solvent of the boiling point of 80～200 ℃ of degree.
As the content of aforementioned organic solvent in aforementioned diaphragm pattern thickening material, can be according to the kind content of aforementioned resin, aforementioned crosslinking agent, aforementioned surfactants etc. etc., suitablely determine.
As aforementioned other composition, only otherwise damage effect of the present invention, do not limit especially, can select according to purpose is suitable, the known various additive of can giving an example for example, hot acid propellant, amine, amide-type, is the quencher etc. of representative with ammonium chloride etc.
As the content of aforementioned other composition in aforementioned diaphragm pattern thickening material, can be according to the kind content of aforementioned resin, aforementioned crosslinking agent etc. etc., suitablely determine.
If with opening coating, crosslinked aforementioned diaphragm pattern thickening material, then thicken this gate electrode opening, form the top layer at this gate electrode on opening, thereby this gate electrode is dwindled with the opening size (size) of opening at aforementioned gate electrode.The separating of electron beam that can surpass in the electron beam lithography system that adopts when forming aforementioned gate electrode with opening looks like boundary, forms finer gate electrode opening.
In addition; at this moment; the aforementioned gate electrode amount of swelling of opening; be the reduction volume of aforementioned gate electrode with the opening size (size) of opening; can be controlled in the desirable scope by the suitable composition of regulating aforementioned diaphragm pattern thickening material, ratio of components, use level, concentration, viscosity, coating thickness, baking temperature, stoving time etc.
As the composition of aforementioned diaphragm pattern thickening material, ratio of components, use level, concentration, viscosity etc.; do not limit especially; can select according to purpose is suitable; but from the amount of swelling of aforementioned gate electrode with opening; be that aforementioned gate electrode considers that with the viewpoint of the control of the reduction volume of the opening size (bore) of opening preferably the total content of the composition beyond the water in this diaphragm pattern thickening material is at 5～40 quality %.
After aforementioned coating, can carry out development treatment.If carry out this development treatment, then can remove and the aforementioned unnecessary aforementioned diaphragm pattern thickening material that is not formed with mixed layer between undermost.
Aforementioned development treatment can be a water development, also can be the development that utilizes weak base aqueous solution, but considers from carrying out the development treatment this point low-cost, expeditiously, preferably water development.
In addition, dwindle in the operation with opening, by carrying out 1 time at least, or carry out repeatedly as required, aforementioned gate electrode can be controlled at desirable degree with the opening size of opening from the above aforementioned processing that is applied to aforementioned development at aforementioned gate electrode.
In addition,, do not limit especially as the method for the coating of aforementioned diaphragm pattern thickening material, can be according to purpose, the suitable selection from known coating process for example, can be fit to for example spin-coating method etc.Under the situation of this spin-coating method, about its condition, for example, revolution is 100～10000rpm degree, is preferably 800～5000rpm, and the time is 1 second～10 minutes degree, is preferably 1 second～90 seconds.
Coating thickness during as aforementioned coating, (10～1,000nm) degree is preferably 2,000～5,000 (200～500nm) scope to be generally 100～10,000 .
In addition, when aforementioned coating,, can in aforementioned diaphragm pattern thickening material, not contain yet, and before this diaphragm pattern thickening material of coating, be coated with in addition about aforementioned surfactants.
From can be on the interface of aforementioned orlop and aforementioned diaphragm pattern thickening material; high efficiency produces this diaphragm pattern thickening material and considers to the angle that aforementioned orlop mixes (impregnation) etc.; preferably when aforementioned coating and even thereafter, the aforementioned diaphragm pattern thickening material to coating carries out preliminary drying (heat drying).
In addition, as the condition of aforementioned preliminary drying (heat drying), method etc., only otherwise make aforementioned orlop softening, do not limit especially, can select according to purpose is suitable, for example, temperature is 40～120 ℃ of degree, be preferably 70～100 ℃, the time is 10 seconds～5 minutes degree, is preferably 40 seconds～100 seconds.
In addition; from can be on the interface of aforementioned orlop and aforementioned diaphragm pattern thickening material; high efficiency is carried out the angle of cross-linking reaction etc. of the part of aforementioned mixing (impregnation) and is considered; preferably afterwards at aforementioned preliminary drying (heat drying); aforementioned diaphragm pattern thickening material to coating carries out crosslinked baking (cross-linking reaction).
In addition,, only otherwise make aforementioned orlop softening, do not limit especially, can select according to purpose is suitable, but can adopt usually than the high temperature conditions of aforementioned preliminary drying (heat drying) as the condition of aforementioned crosslinked baking (cross-linking reaction), method etc.As the condition of aforementioned crosslinked baking (cross-linking reaction), for example, temperature is 70～150 ℃ of degree, is preferably 90～130 ℃, and the time is 10 seconds～5 minutes degree, is preferably 40 seconds～100 seconds.
In addition, preferably in aforementioned crosslinked baking (cross-linking reaction) afterwards, the aforementioned diaphragm pattern thickening material to coating carries out development treatment.In this case; can dissolve in the aforementioned diaphragm pattern thickening material of removing coating, not with crosslinked part and even the crosslinked weak part (water-soluble high part) of aforementioned orlop; and the diaphragm figure that develop (obtaining) thickens is so be preferred.
-gate electrode formation operation-
Aforementioned gate electrode forms operation, is the operation that forms gate electrode at aforementioned gate electrode with opening.
As the formation method of aforementioned gate electrode, do not limit especially, can select according to purpose is suitable, for example, can be fit to the vapour deposition method etc. of giving an example.
As the metal material that utilizes aforementioned vapour deposition method evaporation, can for example, be fit to Al, Ti, Pt, Au etc. for example from suiting the material known to select as electrode material.These can a kind use separately, also can 2 kinds or it is above and use.In addition, also can form aforementioned T type electrode, in this case, for example, be fit to form by the stack membrane of Ti, Pt, Au for example the mode of aforementioned T type electrode by stacked these metals.
In addition, after aforementioned gate electrode forms, need to remove aforementioned lamination diaphragm,, for example, or peel off method, etching method etc. for example, wherein be fit to peel off for example method as the removal method of this lamination diaphragm.About the condition of these methods etc., do not limit especially, can be from as suitable selection the known condition etc.
Form in the operation at aforementioned gate electrode, protect film formed peristome, form T type electrode at the aforementioned lamination of perforation.Particularly,, form the foundation of aforementioned gate electrode, in the aforementioned opening that forms in lateral etch, form the top grid portion in the aforementioned gate electrode in the part of aforementioned gate electrode with opening.Then, remove aforementioned lamination diaphragm, can obtain gate electrode.
-other operation-
As aforementioned other operation, do not limit especially, can select according to purpose is suitable, for example, can be fit to the aforementioned gate electrode in aforementioned orlop for example with opening near incident beam the electron beam incident operation, with aforementioned gate electrode with opening as mask and tunnel the gate electrode formation face driving operation etc. that gate electrode forms face.
In addition, will form face portion by the aforementioned gate electrode that aforementioned gate electrode formation face driving operation is tunneled sometimes, and be called " grooved area ", the end wall that will be somebody's turn to do in " grooved area " is called " groove ends ".
-electron beam incident operation-
Aforementioned electronic bundle incident operation, before aforementioned gate electrode dwindles operation with opening, carry out, with the aforementioned gate electrode of electron beam incident in aforementioned orlop with near the operation the opening.
Aforementioned electronic bundle incident operation can be carried out in the front and back of aforementioned opening formation operation, also can carry out with the front and back that opening forms operation at aforementioned gate electrode.
As the electron beam in the aforementioned electronic bundle incident operation to aforementioned undermost amount of incident, the dosage that the Eth that preferably develops (diaphragm does not present deliquescent maximum dose to developer solution) or its are following.If aforementioned amount of incident at aforementioned development Eth or below it, just can thicken this orlop in that aforementioned orlop is made under the situation of figure, expeditiously so be preferred.
In the present invention, in aforementioned electronic bundle incident operation, if to aforementioned orlop irradiating electron beam, then the aforementioned orlop part of this electron beam incident is thickened by aforementioned diaphragm pattern thickening material easily.The relation of the amount of incident of the electron beam when Fig. 1 represents 95 ℃ of thickening temps and the amount of swelling of diaphragm figure, as shown in Figure 1, the aforementioned electronic bundle roughly has proportionate relationship to aforementioned undermost amount of incident with by the amount of swelling of aforementioned diaphragm pattern thickening material.Therefore, by the suitable amount of incident that changes the electron beam in the aforementioned electronic bundle incident operation, can regulate gate electrode dwindles the opening size of the aforementioned gate electrode usefulness opening in the operation with opening reduction volume arbitrarily, can be formed on aforementioned undermost a plurality of gate electrodes by the exposure of aforementioned electronic bundle with among the opening, form the different opening of its opening size, can on same gate electrode formation face, separately make the different gate electrode of miniaturization degree arbitrarily, so be favourable.
Electron beam in the aforementioned electronic bundle incident operation is to aforementioned undermost incident, can be by making electron beam evenly and even symmetrically or inhomogeneous and even asymmetricly be incident on aforementioned gate electrode with carrying out near the opening.
Make electron beam evenly and even symmetrically be incident on aforementioned gate electrode with near the situation the opening under, can be evenly and even thicken aforementioned gate electrode symmetrically with near the opening, carrying out aforementioned gate electrode when forming operation, aforementioned opening and aforementioned gate electrode are positioned at one heart with opening, adopting aforementioned gate electrode to form under the situation of grooved area with opening, and source electrode and drain electrode together are being set with the gate electrode that obtains, and design under the transistorized situation, can make the source electrode side in the gate electrode and form distance between the source electrode side groove ends in the grooved area of aforementioned gate electrode, identical with drain electrode side groove ends and the distance between the drain electrode side in the gate electrode in the grooved area that forms this gate electrode.
Make electron beam non-homogeneous so that asymmetricly be incident on aforementioned gate electrode with near the situation the opening under, can non-homogeneous and even asymmetricly thicken aforementioned gate electrode with near the opening, carrying out aforementioned gate electrode when forming operation, forming the opening and the gate electrode that form in the operation at aforementioned opening is not positioned at one heart with opening, and adopt aforementioned gate electrode to form under the situation of grooved area with opening, and source electrode and drain electrode together are being set with the gate electrode that obtains, and design under the transistorized situation, can make the source electrode side in the gate electrode and form distance between source electrode side groove ends in the grooved area of aforementioned gate electrode, with drain electrode side groove ends and the distance between the drain electrode side in the gate electrode different (making so-called offset gate or biasing groove) in the grooved area that forms this gate electrode.
Herein, if be described in detail the manufacturing of aforementioned offset gate, for example, under the situation of the gate electrode end of wanting to prolong the drain electrode side and the distance between the groove ends in the grooved area, promptly, distance between the groove ends in wanting the grooved area that makes the gate electrode end in the electrode side of source and form aforementioned gate electrode, be shorter than under the situation of drain electrode side groove ends in the grooved area (conductive formation is removed the zone) that forms this gate electrode and the distance between the aforementioned drain electrode side, forming operation by aforementioned gate electrode with opening, form aforementioned gate electrode with opening after, before aforementioned gate electrode dwindles operation with opening, to the drain electrode side periphery in the aforementioned gate electrode usefulness opening, carry out comparing, carry out the electron beam incident operation of electron beam incident (dosage) more with source electrode side periphery.
Then, removing the aforementioned gate electrode of zone (grooved area) length with the decision conductive formation uses opening as mask, driving, removal are present in aforementioned gate electrode and form near the conductive formation of face, form conductive formation and remove zone (grooved area), carry out such gate electrode formation face driving operation.
In addition; if then adopt aforementioned diaphragm pattern thickening material; carry out aforementioned gate electrode and dwindle operation with opening; then compare with source electrode side, a side of the drain electrode side in the aforementioned gate electrode opening more thickens, and the reduction volume of the opening size in this drain electrode side is greater than the reduction volume of the opening size in the electrode side of source; in the aforementioned grooves zone; asymmetricly dwindle opening size, in the aforementioned grooves zone, on the position that aforementioned source electrode lateral deviation is moved, form aforementioned gate electrode opening (displacement).
Then, form in the operation,, just can make aforementioned offset gate if form aforementioned gate electrode at aforementioned gate electrode.
-gate electrode formation face driving operation-
Aforementioned gate electrode formation face driving operation is to use opening as mask with aforementioned gate electrode, and the driving gate electrode forms the operation of face.
Aforementioned gate electrode formation face driving operation for example, can be fit to be undertaken by etch processes, as this etch processes, does not limit especially, for example, is preferably dry-etching etc.
As the condition of aforementioned etch processes etc., do not limit especially, can select according to purpose is suitable.
Aforementioned gate electrode formation face driving operation, preferably aforementioned gate electrode forms operation with opening after, aforementioned gate electrode carries out before dwindling operation with opening, under the situation of carrying out aforementioned electronic bundle incident operation, particularly preferably aforementioned gate electrode forms operation with opening after, aforementioned gate electrode carries out dwindle operation and aforementioned electronic bundle incident operation with opening before.
Aforementioned gate electrode forms operation with opening after, before aforementioned gate electrode dwindles operation with opening, carry out under the situation of aforementioned gate electrode formation face driving operation, make in the past, according to forming grooved area with forming opening, after forming grooved area, form the formation of gate electrode offset gate (biasing groove) of irrealizable atomic thin and tall precision with the mode of opening, can adopt 1 opening to carry out not adopting grooved area to form with opening and gate electrode under the situation with two openings of opening.
Aforementioned gate electrode forms operation with opening after, before aforementioned gate electrode dwindles operation with opening, carry out under the situation of aforementioned gate electrode formation face driving operation, at first, form aforementioned gate electrode with forming opening, after forming the aforementioned grooves zone as the mask driving, dwindle this gate electrode opening, use opening as mask, form gate electrode with this gate electrode that dwindles.Therefore, do not produce the offset of aforementioned grooves zone and aforementioned gate electrode (micro gate electrode).Form and be used to form aforementioned gate electrode and form owing to be used to form the figure of the grooved area (conductive formation is removed the zone) of gate electrode for 1 time, so the aperture position when not needing to make figure is involutory with the figure of opening.Under the involutory situation of this aperture position of needs, decide and limit the formation precision of the peripheral structure of gate electrode according to the involutory precision in its position, involutory precision is not enough and occur under the situation of offset in this position, have the aforementioned grooves zone and the gate electrode that forms between produce the problem of offset.In the hyperfrequency device, holding the distance of the groove ends the aforementioned grooves zone from aforementioned gate electrode (micro gate electrode) is 0.1 μ m or its following degree, if be offset based on aforementioned location, there is deviation in this distance, then exist uniformity to reduce as device, become the reason that causes circuit work frequency to reduce, produce the problem of fluctuation on the device property.But, aforementioned gate electrode forms operation with opening after, before aforementioned gate electrode dwindles operation with opening, carry out not needing the position involutory under the situation of aforementioned gate electrode formation face driving operation, do not need the interlayer of electron beam lithography system to overlap, just do not have above-mentioned problem yet.
In addition; when adopting 1 opening to carry out the formation of grooved area and gate electrode with the formation of opening; after the regional opening size that forms the opening of usefulness of aforementioned grooves need being set as 0.2 μ m degree; the opening size of this opening is narrowed down to 0.1 μ m degree; but in the present invention; dwindle in the operation with opening at aforementioned gate electrode; by adopting aforementioned diaphragm pattern thickening material; gate electrode to opening size with 0.2 μ m degree thickens with opening, can be easily this gate electrode be narrowed down to 0.1 μ m degree with the opening size of opening.
In addition, the aforementioned gate electrode reduction volume of the opening size of opening, because of the function of the semiconductor devices such as transistor made different, but in the present invention, in aforementioned electronic bundle incident operation, by using opening to suit to change the amount of incident of aforementioned electronic bundle, can easily reduction volume be controlled at desirable degree by each aforementioned gate electrode.
In addition, if can only form offset gate on the position arbitrarily, help the design of device, but in the present invention, in aforementioned electronic bundle incident operation, by each aforementioned gate electrode with opening independently, the non-homogeneous and even bundle of incident aforementioned electronic asymmetricly, can in desirable degree, change amount of bias arbitrarily.Therefore, in the device circuitry of making, can also separately make the different offset gate of a plurality of amount of bias.
The gate electrode of making by the manufacture method of gate electrode of the present invention of the present invention, can be offset gate, also can not be, can be suitable for various semiconductor devices etc., for example be suitable for using in the field-effect transistor, be particularly suitable in semiconductor device of the present invention, using.
(semiconductor device and manufacture method thereof)
The manufacture method of semiconductor device of the present invention comprises the manufacture method of above-mentioned gate electrode of the present invention at least, comprises suitable other operation of selecting.
As aforementioned other operation, do not limit especially, can be according to the semiconductor device of making, the suitable selection from known operation.
In addition, semiconductor device of the present invention is made by the manufacture method of semiconductor device of the present invention.Semiconductor device of the present invention is suitable as field-effect transistor, or as its integrated circuit etc. and use.
Below, specify embodiments of the invention, but the present invention is not limited to these embodiment.
(embodiment 1)
On the semiconductive GaAs substrate, pass through mocvd method, stack gradually and form resilient coating, InGaAs electronics mobile layer, AlGaAs electron supply layer, reach the GaAs conductive formation, in addition, after forming the active region by injection oxygen, adopt AuGe (20nm)/Au (200nm) electrode, form Ohmic electrode.
Secondly, in gate electrode formed aforementioned active region in the zone, the two ends at the position that forms fine grid (gate electrode) by driving, remove the conductive formation part in the zone of wide 0.2 μ m degree, formed grooved area.
Secondly, as shown in Figure 2, on the substrate 1 that forms gate electrode; by spin-coating method, the mode that reaches 300nm with thickness is coated with PMMA class diaphragm (ZEP2000, Japanese ゼ オ Application (exabyte) company makes); 180 ℃ of heat treatments 5 minutes, form orlop 2 thus.In the above, by spin-coating method, the mode that reaches 500nm with thickness is coated with PMGI (manufacturing of MCC company), 180 ℃ of heat treatments 3 minutes, forms intermediate layer 3 thus.In the above, by spin-coating method, the mode that reaches 300nm with thickness is coated with the diaphragm that contains poly styrene polymer (ZEP520-A7, Japanese ゼ オ Application company makes), 180 ℃ of heat treatments 3 minutes, forms the superiors 4 thus.By more than, form the lamination protective layer 5 of 3-tier architecture.More than be that aforementioned lamination protective layer forms operation.
Secondly, as shown in Figure 2,, carry out electron beam exposure, in the superiors 4, form the wide opening of 0.7 μ m along the sense of current to the superiors in the lamination protective layer 54.Then,, adopt alkaline-based developer, carry out lateral etch the intermediate layer 3 of exposing from this opening.More than be that aforementioned opening forms operation.
Secondly, the orlop 2 to exposing from the opening that forms operation formation by aforementioned opening carries out electron beam exposure, forms the wide gate electrode opening of 0.12 μ m along the sense of current.More than be that aforementioned gate electrode forms operation with opening.
Secondly, with near the periphery of opening, promptly develop Eth or its following dosage (60 μ C) of the dosage of incident development orlop 2 forms electron beam incident zone 7 symmetrically to this gate electrode of forming.It more than is aforementioned electronic bundle incident operation.
In addition, the dosage among the embodiment 1 is 60 μ C, but is not exposing orlop 2; together form under the state of lamination protective layer 5 with the intermediate layer 3 and the superiors 4; also can be from lamination protective layer 5 incident aforementioned electronic bundles, for example, as shown in Figure 3; also can be by above lamination protective layer 5; for lamination protective layer 5, change the amount of incident of electron beam 50, form electron beam incident zone 7a, 7b and 7c; dosage as this moment is preferably 90 μ C degree.In this case, only handle, just can finish figure and form by carrying out once electron beam exposure.
Secondly, carry out aforementioned gate electrode and dwindle operation with opening.At first, modulation diaphragm pattern thickening material.Promptly, contain polyvinyl acetal resin (ponding chemical company manufacturing as aforementioned resin, KW-3) 16 weight portions, as tetramethoxy propylene glycol urea (manufacturing of ponding chemical company) 1 weight portion of aforementioned crosslinking agent, (rising sun electrification company makes as the poly(ethylene oxide) monoalky lether surfactant of aforementioned surfactants, TN-80, non-ionic surface active agent) 0.0625 weight portion.In addition, as the main solvent composition except that aforementioned resin, aforementioned crosslinking agent and aforementioned surfactants, (mass ratio is pure water (deionized water): isopropyl alcohol=82.6: 0.4) to use the mixed liquor of pure water (deionized water) and isopropyl alcohol.Secondly, as shown in Figure 2,, after 3000rpm, 60 seconds being coated with this diaphragm pattern thickening material, carried out preliminary drying in 70 seconds, aforementioned gate electrode is mixed with opening and aforementioned diaphragm pattern thickening material, as shown in Figure 2, form mixed layer 6 at 85 ℃ by spin-coating method.Then, carry out crosslinked baking, make mixed layer 6 crosslinked, and form crosslinked mixed layer 20 95 ℃ of 70 second.Then, by water carry out 60 second development treatment, the diaphragm pattern thickening material beyond the crosslink part is removed in dissolving.
Its result; only by being coated with aforementioned diaphragm pattern thickening material with opening at aforementioned gate electrode; just can be easily and expeditiously; specific opening in aforementioned gate electrode usefulness opening; promptly in aforementioned electronic bundle incident operation incident in the opening of dosage; opening size is narrowed down to 0.08 μ m imperceptibly, the opening size of other opening is also narrowed down to 0.1 μ m imperceptibly.In addition, dwindle between the operation with opening at aforementioned gate electrode, the opening size of the opening in the intermediate layer 3 and the superiors 4 does not change.
Secondly, carry out aforementioned gate electrode and form operation.That is, adopt the high vacuum vapor deposition device, evaporation forms the electrode of the thick 10nm of Ti, the thick 10nm of Pt, the thick 300nm of Au.Afterwards,, remove aforementioned lamination protective layer, form fine T type gate electrode thus by peeling off method (N-methyl-2-pyrrolidinyl, 75 ℃, 60 minutes).
(embodiment 2)
In embodiment 1, except that aforementioned gate electrode forms operation with opening after, aforementioned electronic bundle incident operation and aforementioned gate electrode carry out the aforementioned gate electrode formation face driving operation before dwindling operation with opening, and be identical with embodiment 1.
That is, particularly, shown in Fig. 4 A, on the surface of semiconductor substrate, at regular intervals, form source electrode S and drain electrode D, and form the SiN film.Then, form operation, on this SiN film, form the lamination protective layer 5 that constitutes by orlop 2, intermediate layer 3 and the superiors 4 by aforementioned lamination protective layer.Then, form operation by aforementioned opening, the superiors 4 in lamination protective layer 5 and intermediate layer 3 form opening.Then, form operation by aforementioned gate electrode with opening, forming opening size is the gate electrode opening 10 of 0.2 μ m.
Secondly, shown in Fig. 4 B,, use opening 10 as mask, dig into, form grooved area (conductive formation is removed the zone) 10a thus except that the conductive formation part in the surface of aforesaid semiconductor substrate with gate electrode by aforementioned gate electrode formation face driving operation.
Secondly, similarly to Example 1, carry out aforementioned electronic bundle incident operation and aforementioned gate electrode and dwindle operation, shown in Fig. 4 C, the gate electrode of opening size 0.2 μ m is narrowed down to 0.1 μ m with the opening size of opening 10.Secondly, similarly to Example 1, carry out gate electrode and form operation, shown in Fig. 4 D, form gate electrode 30.In addition, by peeling off method, lamination protective layer 5 is removed in dissolving, forms fine gate electrode (mushroom gate electrode) 30 on gate electrode formation face.
In addition, in embodiment 2, carry out aforementioned preliminary drying in 70 seconds, carry out aforementioned crosslinked baking in 70 seconds at 105 ℃ at 95 ℃.In addition; dosage in the electron beam incident operation among the embodiment 2; similarly to Example 1; be 60 μ C; but do not exposing orlop 2; together form under the state of lamination protective layer 5 with the intermediate layer 3 and the superiors 4; also can be above lamination protective layer 5 incident aforementioned electronic bundle; for example, also can be by above lamination protective layer 5, for lamination protective layer 5; change the amount of incident of electron beam 50; form electron beam incident zone 7a, 7b and 7c, the dosage as in the electron beam incident operation of this moment is preferably 90 μ C degree.In this case, only handle, just can finish figure and form by carrying out once electron beam exposure.
By more than, the FET that can obtain having micro gate electrode.In this FET, with respect to gate electrode 30, the groove length of source electrode S side and the groove length of drain electrode D side are identical.
(embodiment 3)
In embodiment 2, in aforementioned electronic bundle incident operation, because with the drain electrode D side in the gate electrode opening, optionally dwindle its opening size, therefore, only in this drain electrode D side, incident development Eth or its following dosage (60 μ C) are (with reference to Fig. 5 A～C).
As a result, shown in Fig. 5 D, for gate electrode 30, the groove length of drain electrode D side obtains having the field-effect transistor of offset gate than the long 0.04 μ m of groove length of source electrode S side.
At this, if note optimal way of the present invention is then as follows:
The manufacture method of (note 1) a kind of gate electrode is characterized in that comprising: on gate electrode formation face, form the lamination diaphragm formation operation that comprises the lamination diaphragm of electron beam protective layer at least at orlop; The opening that layer beyond aforementioned orlop forms opening forms operation; At the aforementioned orlop that exposes from aforementioned opening, the formation gate electrode forms operation with the gate electrode of opening with opening; Optionally dwindle this gate electrode and dwindle operation with opening with the gate electrode of opening; Form operation at this gate electrode with the gate electrode that opening forms gate electrode.
(note 2) is as the manufacture method of note 1 described gate electrode; wherein; gate electrode dwindles operation with opening, is to carry out at least once at undermost surface coated diaphragm pattern thickening material, and makes the operation that is formed on the processing that this undermost gate electrode dwindles with the opening size of opening.
(note 3) as the manufacture method of any described gate electrode in the note 1～2, wherein, is included in gate electrode and dwindles before the operation with opening, makes electron beam incident near the electron beam incident operation of gate electrode with opening.
(note 4) as the manufacture method of note 3 described gate electrodes, wherein, the amount of incident of electron beam is development Eth or its following dosage.
(note 5) wherein, in the electron beam incident operation, makes electron beam incide gate electrode symmetrically with near the opening as the manufacture method of any described gate electrode in the note 3～4.
(note 6) wherein, in the electron beam incident operation, makes electron beam asymmetricly incide gate electrode with near the opening as the manufacture method of any described gate electrode in the note 3～4.
(note 7) wherein, by changing the amount of incident of the electron beam in the electron beam incident operation, regulates gate electrode dwindles the opening size of the gate electrode usefulness opening in the operation with opening reduction volume as the manufacture method of any described gate electrode in the note 3～6.
(note 8) is as the manufacture method of any described gate electrode in the note 1～5, wherein, be included in gate electrode with opening form the back, before gate electrode dwindles operation with opening, with gate electrode with opening as mask, the driving gate electrode forms the gate electrode formation face driving operation of face.
(note 9) as the manufacture method of note 8 described gate electrodes, and wherein, gate electrode formation face driving operation is undertaken by in dry-etching and the Wet-type etching any one.
As the manufacture method of any described gate electrode in the note 1～9, wherein, orlop is formed by the material that can thicken by the diaphragm pattern thickening material (note 10).
As the manufacture method of any described gate electrode in the note 1～10, wherein, orlop is formed by the electron beam diaphragm (note 11).
As the manufacture method of any described gate electrode in the note 1～11, wherein, orlop is formed by polymethyl methacrylate (PMMA) class diaphragm (note 12).
(note 13) as the manufacture method of any described gate electrode in the note 1～12, and wherein, lateral etch can be carried out in the intermediate layer directly over undermost.
(note 14) as the manufacture method of any described gate electrode in the note 1～13, and wherein, the intermediate layer directly over undermost is formed by the light diaphragm.
(note 15) as the manufacture method of any described gate electrode in the note 1～14, and wherein, the intermediate layer directly over undermost is formed by poly-polydimethyl glutarimide (PMGI) class diaphragm.
As the manufacture method of any described gate electrode in the note 1～15, wherein, the superiors are formed by the electron beam diaphragm (note 16).
As the manufacture method of any described gate electrode in the note 1～16, wherein, the superiors are formed by the diaphragm that contains poly styrene polymer (note 17).
(note 18) is as the manufacture method of any described gate electrode in the note 1～17; wherein; the lamination protective layer constitutes by 3 layers; orlop is formed by polymethyl methacrylate (PMMA) class diaphragm; intermediate layer directly over this is undermost is formed by poly-polydimethyl glutarimide (PMGI) class diaphragm, and the superiors directly over this intermediate layer are formed by the diaphragm that contains poly styrene polymer.
As the manufacture method of any described gate electrode in the note 1～18, wherein, when carrying out gate electrode formation operation, opening and gate electrode are not positioned at opening with one heart (note 19).
(note 20) as the manufacture method of any described gate electrode in the note 1～19, wherein, gate electrode forms operation, after forming gate electrode by vapour deposition method, carries out the removal of lamination protective layer.
As the manufacture method of note 20 described gate electrodes, wherein, the removal of lamination protective layer is undertaken by peeling off method (note 21).
(note 22) as the manufacture method of any described gate electrode in the note 1～21, wherein, the diaphragm pattern thickening material contains resin, crosslinking agent and surfactant.
(note 23) as the manufacture method of note 22 described gate electrodes, wherein, the diaphragm pattern thickening material is water-soluble and even alkali-soluble.
(note 24) as the manufacture method of any described gate electrode in the note 22～23, wherein, and glass or plastic containers.
(note 25) as the manufacture method of any described gate electrode in the note 22～25, and wherein, resin is to be selected from least a in polyvinyl alcohol, polyvinyl acetal and the polyvinylacetate.
(note 26) as the manufacture method of any described gate electrode in the note 22～26, and wherein, crosslinking agent is to be selected from least a in melamine derivative, urea derivative, the connection urea derivative.
(note 27) as the manufacture method of any described gate electrode in the note 22～26, and wherein, the diaphragm pattern thickening material contains from part and has select the resin that water-soluble aromatic compounds of group and aromatic compound form at least a.
(note 28) is as the manufacture method of note 27 described gate electrodes, wherein, the water-soluble aromatic compounds of group, from polyphenolic substance, aromatic carboxy acid compound, naphthalene multivalence alcoholic compound, benzophenone compound, flavonoids, they derivative and their glucoside select, part has the resin that aromatic compound forms, and selects from polyethylene allyl acetal resin, polyethylene allyl ether resin and polyethylene allyl ester resin.
(note 29) as the manufacture method of any described gate electrode in the note 22～28, wherein, the diaphragm pattern thickening material contains organic solvent.
(note 30) as the manufacture method of note 29 described gate electrodes, wherein, organic solvent is select from alcohols solvent, chain esters solvent, cyclic ester kind solvent, ketones solvent, chain ether solvent, cyclic ether kind solvent at least a.
(note 31) a kind of gate electrode, it is characterized in that: the manufacture method by any described gate electrode in the note 1～30 is made, the manufacture method manufacturing of this gate electrode comprises: on gate electrode formation face, form the lamination diaphragm formation operation that comprises the lamination diaphragm of electron beam protective layer at least at orlop; The opening that layer beyond aforementioned orlop forms opening forms operation; Form gate electrode at the aforementioned orlop that exposes from aforementioned opening and form operation with opening with the gate electrode of opening; Optionally dwindle this gate electrode and dwindle operation with opening with the gate electrode of opening; Form operation at this gate electrode with the gate electrode that opening forms gate electrode.
(note 32) is as note 31 described gate electrodes, wherein, source electrode side in the gate electrode and form distance between the source electrode side groove ends in the grooved area of aforementioned gate electrode is identical with drain electrode side groove ends and the distance between the drain electrode side in the gate electrode in the grooved area that forms this gate electrode.
(note 33) is as note 31 described gate electrodes, wherein, source electrode side in the gate electrode and form distance between the source electrode side groove ends in the grooved area of aforementioned gate electrode, and drain electrode side groove ends and the distance between the drain electrode side in the gate electrode in the grooved area that forms this gate electrode are inequality.
(note 34) can be used for field-effect transistor as any described gate electrode in the note 31～33.
The manufacture method of (note 35) a kind of semiconductor device, it is characterized in that: the manufacture method that comprises any described gate electrode in the note 1～30, the gate electrode manufacture method that promptly comprises following operation: on gate electrode formation face, form the lamination diaphragm formation operation that comprises the lamination diaphragm of electron beam protective layer at least at orlop; The opening that layer beyond aforementioned orlop forms opening forms operation; Form gate electrode at the aforementioned orlop that exposes from aforementioned opening and form operation with opening with the gate electrode of opening; Optionally dwindle this gate electrode and dwindle operation with opening with the gate electrode of opening; Form operation at this gate electrode with the gate electrode that opening forms gate electrode.
(note 36) a kind of semiconductor device, it is characterized in that: the manufacture method by note 35 described semiconductor devices is made, promptly, the manufacture method of the semiconductor device of the manufacture method by comprising gate electrode is made, the manufacture method of this gate electrode comprises: on gate electrode formation face, form the lamination diaphragm formation operation that comprises the lamination diaphragm of electron beam protective layer at least at orlop; The opening that layer beyond aforementioned orlop forms opening forms operation; Form gate electrode at the aforementioned orlop that exposes from aforementioned opening and form operation with opening with the gate electrode of opening; Optionally dwindle this gate electrode and dwindle operation with opening with the gate electrode of opening; Form operation at this gate electrode with the gate electrode that opening forms gate electrode.
(note 37) is as note 36 described semiconductor devices, it has the source electrode and drain electrode forms, source electrode side in the gate electrode and form distance between the source electrode side groove ends in the grooved area of aforementioned gate electrode is identical with drain electrode side groove ends and the distance between the drain electrode side in the gate electrode in the grooved area that forms this gate electrode.
(note 38) is as note 36 described gate electrodes, it has the source electrode and drain electrode forms, source electrode side in the gate electrode and form distance between the source electrode side groove ends in the grooved area of aforementioned gate electrode, and drain electrode side groove ends and the distance between the drain electrode side in the gate electrode in the grooved area that forms this gate electrode are inequality.
According to the present invention, provide a kind of gate electrode of forming by common electron beam exposure of thickening with the protective layer opening and dwindle opening size, can make the manufacture method of the gate electrode of micro gate electrode thus expeditiously.In addition, the present invention can provide a kind of, transmitting-receiving of being suitable as submillimeter millimere-wave band electric wave that make, excellent in high-frequency characteristics by the manufacture method of this gate electrode with so that high speed signal handle the gate electrode of the field-effect transistor useful with (optical communication with) device.In addition, the present invention can provide a kind of high performance semiconductor device and high efficiency manufacture method thereof that adopts this gate electrode.
Claims (10)
1. the manufacture method of a gate electrode is characterized in that comprising: on gate electrode formation face, form the lamination diaphragm formation operation that comprises the lamination diaphragm of electron beam protective layer at least at orlop; The opening that layer beyond aforementioned orlop forms opening forms operation; Form gate electrode at the aforementioned orlop that exposes from aforementioned opening and form operation with opening with the gate electrode of opening; Optionally dwindle this gate electrode and dwindle operation with opening with the gate electrode of opening; Form operation at this gate electrode with the gate electrode that opening forms gate electrode.
2. the manufacture method of gate electrode as claimed in claim 1; it is characterized in that; it is to carry out at least once at undermost surface coated diaphragm pattern thickening material that gate electrode dwindles operation with opening, and makes the operation that is formed on the processing that this undermost gate electrode dwindles with the opening size of opening.
3. the manufacture method of gate electrode as claimed in claim 1 is characterized in that, is included in gate electrode and dwindles before the operation with opening, makes electron beam incident near the electron beam incident operation of gate electrode with opening.
4. the manufacture method of gate electrode as claimed in claim 3 is characterized in that, in the electron beam incident operation, makes electron beam incide gate electrode symmetrically with near the opening.
5. the manufacture method of gate electrode as claimed in claim 3 is characterized in that, in the electron beam incident operation, makes electron beam asymmetricly incide gate electrode with near the opening.
6. the manufacture method of gate electrode as claimed in claim 3 is characterized in that, by changing the amount of incident of the electron beam in the electron beam incident operation, regulates gate electrode dwindles the opening size of the gate electrode usefulness opening in the operation with opening reduction volume.
7. the manufacture method of gate electrode as claimed in claim 1 is characterized in that, be included in gate electrode with opening form the back, before gate electrode dwindles operation with opening, with gate electrode with opening as mask, the driving gate electrode forms the gate electrode formation face driving operation of face.
8. the manufacture method of gate electrode as claimed in claim 1; it is characterized in that; the lamination diaphragm constitutes by 3 layers; orlop is formed by polymethyl methacrylate (PMMA) class diaphragm; intermediate layer directly over this is undermost is formed by poly-polydimethyl glutarimide (PMGI) class diaphragm, and the superiors directly over this intermediate layer are formed by the diaphragm that contains poly styrene polymer.
9. the manufacture method of gate electrode as claimed in claim 1 is characterized in that, the diaphragm pattern thickening material contains resin, crosslinking agent and surfactant.
10. a gate electrode is characterized in that, makes by the manufacture method of any described gate electrode in the claim 1～9.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002249390A JP4763218B2 (en) | 2002-08-28 | 2002-08-28 | Method for manufacturing gate electrode |
| JP249390/2002 | 2002-08-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1679173A true CN1679173A (en) | 2005-10-05 |
| CN100435355C CN100435355C (en) | 2008-11-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB03819984XA Expired - Lifetime CN100435355C (en) | 2002-08-28 | 2003-08-04 | Gate electrode and manufacturing method thereof |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4763218B2 (en) |
| KR (1) | KR100663151B1 (en) |
| CN (1) | CN100435355C (en) |
| TW (1) | TWI243431B (en) |
| WO (1) | WO2004021450A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112335023A (en) * | 2018-06-27 | 2021-02-05 | 三菱电机株式会社 | Method for manufacturing semiconductor device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4718145B2 (en) * | 2004-08-31 | 2011-07-06 | 富士通株式会社 | Semiconductor device and method for manufacturing gate electrode |
| KR101900976B1 (en) * | 2010-12-27 | 2018-09-20 | 브레우어 사이언스 인코포레이션 | Processes to pattern small features for advanced patterning needs |
| JP7484479B2 (en) | 2020-06-19 | 2024-05-16 | 住友電気工業株式会社 | Method for manufacturing semiconductor device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61284969A (en) * | 1985-06-10 | 1986-12-15 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field effect transistor |
| JP3340493B2 (en) * | 1993-02-26 | 2002-11-05 | 沖電気工業株式会社 | Pattern forming method, method for forming photomask for phase shift method |
| JP2624157B2 (en) * | 1993-12-27 | 1997-06-25 | 日本電気株式会社 | Method for manufacturing field effect transistor |
| JP2894485B2 (en) * | 1996-09-30 | 1999-05-24 | 日本電気株式会社 | Method for manufacturing field effect transistor |
| JP3924910B2 (en) * | 1998-03-31 | 2007-06-06 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| JP3332851B2 (en) * | 1998-04-22 | 2002-10-07 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
| JPH11352692A (en) * | 1998-06-04 | 1999-12-24 | Nippon Zeon Co Ltd | Resist composition |
| JP2001109165A (en) * | 1999-10-05 | 2001-04-20 | Clariant (Japan) Kk | Performance forming method |
| JP2001189283A (en) * | 2000-01-05 | 2001-07-10 | Matsushita Electronics Industry Corp | Manufacturing method for semiconductor device |
-
2002
- 2002-08-28 JP JP2002249390A patent/JP4763218B2/en not_active Expired - Lifetime
-
2003
- 2003-08-04 KR KR20057003156A patent/KR100663151B1/en active IP Right Grant
- 2003-08-04 CN CNB03819984XA patent/CN100435355C/en not_active Expired - Lifetime
- 2003-08-04 WO PCT/JP2003/009865 patent/WO2004021450A1/en active Application Filing
- 2003-08-06 TW TW92121456A patent/TWI243431B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112335023A (en) * | 2018-06-27 | 2021-02-05 | 三菱电机株式会社 | Method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004087967A (en) | 2004-03-18 |
| KR100663151B1 (en) | 2007-01-02 |
| WO2004021450A1 (en) | 2004-03-11 |
| CN100435355C (en) | 2008-11-19 |
| KR20050033656A (en) | 2005-04-12 |
| JP4763218B2 (en) | 2011-08-31 |
| TWI243431B (en) | 2005-11-11 |
| TW200406036A (en) | 2004-04-16 |
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