CN1677236A - Method for cutting film workpiece - Google Patents
Method for cutting film workpiece Download PDFInfo
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- CN1677236A CN1677236A CN 200410026777 CN200410026777A CN1677236A CN 1677236 A CN1677236 A CN 1677236A CN 200410026777 CN200410026777 CN 200410026777 CN 200410026777 A CN200410026777 A CN 200410026777A CN 1677236 A CN1677236 A CN 1677236A
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- film
- photoresist
- cutting method
- plating substrate
- workpiece cutting
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Abstract
The invention is a film workpiece cutting method, including the following steps: coating photetching glue on the surface of a coated substrate; then baking the coated substrate to enhance the sensitivity of the photoetching glue; covering the surface of the coated substrate with a shade having many cutting lines; exposing the photoetching glue exposed out of the shade so as to form an exposure region with cutting lines on the surface of the coated substrate; placing and developing the exposed substrate in developer solution; dissolving the photoetching glue in the exposure region in the developer solution so as to expose the exposure region out of the coated substrate; etching the coated substrate in the exposure region to remove the coating so as to expose the substrate; removing the photoetching glue on the surface of the film, using the cutting tool to cut the substrate along the exposed cutting lines, and after washing, obtaining the final film workpiece.
Description
[technical field]
The invention relates to a kind of film workpiece cutting method, especially about a kind of cutting method with optically coated optical element.
[background technology]
Optics and semiconductor science and technology have very big influence to social development, and particularly at electronic information and communication field, thin film technique is that one of them uses branch.These films can be the single or multiple lift plated films that is plated in matrix.At present, there has been multiple precision Control Technology developed, make that the deposit multilayer film becomes possibility on matrix, but, the increase of rete number can cause the internal stress of film filter plate rete to increase, if the rete of film filter plate just has bigger internal stress when forming, need guarantee when then cutting that this stress can excessively not increase, in fact, excessive stress can cause this rete to become fragile and is destroyed or peel off from matrix in cutting operation.
Film workpiece normally is made of glass basis and the plated film that invests on the glass basis, and its cutting method commonly used is the worktable that this film workpiece is placed a cutting equipment, adopts diamond blade to cut this film matrix to preliminary dimension by this cutting equipment subsequently.
Above-mentioned existing method is because the directionless guiding of diamond blade departs from cut direction easily, and directly cutting causes the additonal pressure that rete is interior easily, increase the internal stress of rete, the unrelieved stress stack of additonal pressure and rete, to make spectrum that film workpiece becomes distortion, cutting pressure may be damaged this rete when adopting existing method to cut simultaneously.
In view of this, provide a kind of have cut direction guiding and can reduce the film cutting method of rete internal stress influence real in necessary.
[summary of the invention]
The object of the present invention is to provide a kind of film workpiece cutting method.
The invention relates to a kind of film workpiece cutting method, may further comprise the steps:
(1) at film plating substrate surface applied photoresist;
(2) cover in the film plating substrate surface with the light shield that has a plurality of Cutting Roads;
(3) to exposing the resist exposure of light shield, then film plating substrate surface formation one has the exposure region of Cutting Road;
(4) substrate after will exposing is put into developer solution and is developed, and the photoresist of exposure region is dissolved in developer solution, and then exposure region exposes film plating substrate;
(5) film plating substrate to exposure region carries out etching, and plated film is removed, and exposes ground;
(6) remove the photoresist of film surface, utilize cutting tool substrate to be cut, obtain final film workpiece after the cleaning along the Cutting Road that exposes ground.
Compare prior art, the present invention utilizes optics to develop and etching technique forms a Cutting Road at film surface, cutting tool accurately cuts film plating substrate along Cutting Road, and because the film of Cutting Road is removed by etching, can not produce additional internal stress to film when then cutting.
[description of drawings]
Fig. 1 is the structural representation of the suitable film plating substrate of film workpiece cutting method of the present invention;
Fig. 2 is the structural representation behind the suitable film plating substrate coating photoresist of film workpiece cutting method of the present invention;
Fig. 3 is light shield and the film plating substrate synoptic diagram that film workpiece cutting method of the present invention is suitable for;
Fig. 4 is the structural representation after the suitable film plating substrate exposure of film workpiece cutting method of the present invention;
Fig. 5 is the structural representation after the suitable film plating substrate of film workpiece cutting method of the present invention develops.
[embodiment]
The present invention is applicable to the cutting of the optical module with surface coating.
The present invention includes following steps:
(1) at film plating substrate surface applied photoresist;
(2) film plating substrate behind the baking coating photoresist is to improve the sensitivity of photoresist;
(3) cover in the film plating substrate surface with the light shield that has a plurality of Cutting Roads;
(4) to exposing the resist exposure of light shield, then film plating substrate surface formation one has the exposure region of Cutting Road;
(5) substrate after will exposing is put into developer solution and is developed, and the photoresist of exposure region is dissolved in developer solution, and then exposure region exposes film plating substrate;
(6) film plating substrate to exposure region carries out etching, and plated film is removed, and exposes ground;
(7) remove the photoresist of film surface, utilize cutting tool substrate to be cut, obtain final film workpiece after the cleaning along the Cutting Road that exposes ground.
As shown in Figure 1, film plating substrate 1 in the above-mentioned steps (1) comprises two parts, be respectively ground 10 and plated film 20, wherein the material of ground 10 is glass or polycarbonate (PC, polycarbonate), polymethylmethacrylate transparent polymers such as (PMMA, polymethyl methacrylate).The material of plated film 20 can be silicon (Si) oxide, silicon (Si) nitride, metal and oxide and diamond like carbon film etc. such as Ti, Al, Cu, Ta.Photoresist 30 (as shown in Figure 2) is a kind of eurymeric photoresist, and promptly available developing technique is removed the type of irradiates light part.
For improving the sensitivity of photoresist 30, need toast the film plating substrate that has photoresist 30 1 that obtains through step (1) at low temperatures, general baking temperature is between 50 ℃-150 ℃, and stoving time is 5-10 minute.
Please be simultaneously with reference to shown in Figure 3, after the baking, one light shield 50 with a plurality of Cutting Roads 501 is covered in photoresist 30 surfaces, wherein the width of Cutting Road 501 is 10-100 μ m, with laser light or ultraviolet light (figure does not show) irradiation light shield 50, then under illumination, expose then, stop irradiating laser or ultraviolet light from the photoresist 30 that Cutting Road 501 exposes, light shield 50 is taken off, then form an exposure region 301 (as shown in Figure 4) on photoresist 30 surfaces.
Carry out dry etching (dry etching) along 302 pairs of film plating substrates that expose of stria shape Cutting Road 1, utilize plated film 20 etchings on film plating substrate 1 surface that engraving methods such as reactive ion etching (RIE) or magnetron reactivity ion etching will expose to remove, expose ground 10.
Remaining photoresist 30 is soaked in the concentrated acid (as the concentrated sulphuric acid or red fuming nitric acid (RFNA)) after the heating, and then photoresist 30 can be dissolved by concentrated acid and remove, and exposes the plated film 20 of film plating substrate 1.Clean substrate 1 surface with pure water then, remove remaining acid solution.Use cutting tool (as diamond blade) film plating substrate 1 to be cut into optical work at last with film along stria shape Cutting Road 302.
Claims (10)
1. film workpiece cutting method may further comprise the steps:
(1) at film plating substrate surface applied photoresist;
(2) cover in the film plating substrate surface with the light shield that has a plurality of Cutting Roads;
(3) to exposing the resist exposure of light shield, then film plating substrate surface formation one has the exposure region of Cutting Road;
(4) substrate after will exposing is put into developer solution and is developed, and the photoresist of exposure region is dissolved in developer solution, and then exposure region exposes film plating substrate;
(5) film plating substrate to exposure region carries out etching, and plated film is removed, and exposes ground;
(6) remove the photoresist of film surface, utilize cutting tool substrate to be cut, obtain final film workpiece after the cleaning along the Cutting Road that exposes ground.
2. film workpiece cutting method as claimed in claim 1 is characterized in that: described film plating substrate comprises ground and coatings.
3. film workpiece cutting method as claimed in claim 2 is characterized in that: described photoresist is the eurymeric photoresist.
4. film workpiece cutting method as claimed in claim 3 is characterized in that: the baking film plating substrate is to improve the sensitivity of photoresist behind the coating photoresist, and baking temperature is 50-100 ℃.
5. film workpiece cutting method as claimed in claim 4 is characterized in that: the width of described Cutting Road is 10-100 μ m.
6. film workpiece cutting method as claimed in claim 5 is characterized in that: described exposure process adopts laser or ultraviolet light.
7. film workpiece cutting method as claimed in claim 6 is characterized in that: described developer solution is a kind of in the inorganic alkali solutions such as sodium phosphate, calcium phosphate, NaOH, calcium hydroxide, also can be organic base solution.
8. film workpiece cutting method as claimed in claim 7 is characterized in that: adopt dry etching method in the described etching process.
9. film workpiece cutting method as claimed in claim 8 is characterized in that: described photoresist is removed by the concentrated acid dissolving after heating.
10. film workpiece cutting method as claimed in claim 9 is characterized in that: described concentrated acid is the concentrated sulphuric acid or red fuming nitric acid (RFNA).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100267771A CN100468198C (en) | 2004-04-02 | 2004-04-02 | Method for cutting film workpiece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100267771A CN100468198C (en) | 2004-04-02 | 2004-04-02 | Method for cutting film workpiece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1677236A true CN1677236A (en) | 2005-10-05 |
| CN100468198C CN100468198C (en) | 2009-03-11 |
Family
ID=35049822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100267771A Expired - Fee Related CN100468198C (en) | 2004-04-02 | 2004-04-02 | Method for cutting film workpiece |
Country Status (1)
| Country | Link |
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| CN (1) | CN100468198C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543862A (en) * | 2010-12-22 | 2012-07-04 | 威盛电子股份有限公司 | Reticle set modification to produce multi-core dies |
| CN103594335A (en) * | 2013-11-21 | 2014-02-19 | 中国电子科技集团公司第四十一研究所 | Cutting-up method for plate capacitor |
| CN105448648A (en) * | 2014-07-30 | 2016-03-30 | 北大方正集团有限公司 | Wafer tapeout method |
| CN107079582A (en) * | 2017-01-22 | 2017-08-18 | 乐健科技（珠海）有限公司 | Circuit substrate and its manufacture method, circuit board and its manufacture method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000340492A (en) * | 1999-05-28 | 2000-12-08 | Nec Corp | Mask for electron beam exposure and manufacture of semiconductor device using the same |
| FR2839508B1 (en) * | 2002-05-07 | 2005-03-04 | Saint Gobain | GLAZING CUTTING WITHOUT RIPPING |
| CN1228619C (en) * | 2002-08-05 | 2005-11-23 | 友达光电股份有限公司 | Cutting method for metal coated glass sheet |
-
2004
- 2004-04-02 CN CNB2004100267771A patent/CN100468198C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543862A (en) * | 2010-12-22 | 2012-07-04 | 威盛电子股份有限公司 | Reticle set modification to produce multi-core dies |
| CN102543862B (en) * | 2010-12-22 | 2014-12-10 | 威盛电子股份有限公司 | Reticle set modification to produce multi-core dies |
| CN103594335A (en) * | 2013-11-21 | 2014-02-19 | 中国电子科技集团公司第四十一研究所 | Cutting-up method for plate capacitor |
| CN105448648A (en) * | 2014-07-30 | 2016-03-30 | 北大方正集团有限公司 | Wafer tapeout method |
| CN105448648B (en) * | 2014-07-30 | 2018-09-25 | 北大方正集团有限公司 | A kind of wafer track method |
| CN107079582A (en) * | 2017-01-22 | 2017-08-18 | 乐健科技（珠海）有限公司 | Circuit substrate and its manufacture method, circuit board and its manufacture method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100468198C (en) | 2009-03-11 |
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