CN1677071A - Oxygen leakage detecting method - Google Patents
Oxygen leakage detecting method Download PDFInfo
- Publication number
- CN1677071A CN1677071A CN 200410033255 CN200410033255A CN1677071A CN 1677071 A CN1677071 A CN 1677071A CN 200410033255 CN200410033255 CN 200410033255 CN 200410033255 A CN200410033255 A CN 200410033255A CN 1677071 A CN1677071 A CN 1677071A
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- Prior art keywords
- wafer
- color
- load chamber
- metallic film
- oxygen
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000001301 oxygen Substances 0.000 title claims abstract description 45
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 44
- 238000001514 detection method Methods 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052721 tungsten Inorganic materials 0.000 claims description 14
- 239000010937 tungsten Substances 0.000 claims description 14
- 238000012360 testing method Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 68
- 238000010586 diagram Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910001930 tungsten oxide Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000008595 infiltration Effects 0.000 description 3
- 238000001764 infiltration Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
Abstract
The invention discloses a leak oxygen survey technique which includes first get a survey crystal plate comprising basal plate, metal film formed on the plate with a first color, then put the crystal plate into a reaction room, survey the plate after taken out to get a second color. When the second color is different from the first color, then the oxygen leakage is happening.
Description
Technical field
The present invention relates to a kind of leakage oxygen detection method, particularly a kind of step is simple and can obtain the leakage oxygen detection method of test result fast, in order to check whether oxygen infiltrates in the load chamber (loading area) of a vertical reactor.
Background technology
In present semiconductor industry,,, can make the cost savings of semiconductor technology many so utilize high temperature reaction stove on silicon wafer, to react because high temperature reaction stove (furnance) can allow the multi-disc silicon wafer to carry out (batch) processing in batches simultaneously.Therefore, high temperature reaction stove is applied to many semiconductor technologies, technologies such as for example thermal oxide, chemical vapor deposition or thermal diffusion.
Please refer to Fig. 1, Fig. 1 is the synoptic diagram of a vertical reactor (vertical-type processing furnance).As shown in Figure 1, vertical reactor 10 mainly comprises a tubular reaction chamber (reactiontube) 12, one is arranged at the load chamber 11 of the below of tubular reaction chamber 12, one movable shield (shutter) 13, be arranged between load chamber 11 and the tubular reaction chamber 12, one wafer boat (waferboat) 14, be arranged within the load chamber 11, be used for loading a plurality of wafers (wafer) 16, and a wafer boat lifter (boat elevator) 18, be used for mobile wafer boat 14 and wafer boat 14 can be moved up and down along the direction shown in the double-head arrow AA '.Wherein, each wafer 16 is at first sent into the wafer boat 14 in the load chamber 11 in order, and then opens movable shield 13, and wafer boat lifter 18 is sent into wafer boat 14 within the tubular reaction chamber 12.After treating that wafer boat 14 fully is admitted in the tubular reaction chamber 12, just close movable shield 13, and carry out a thermal response on each wafer 16 in wafer boat 14.As previously mentioned, the thermal response of being carried out in the tubular reaction chamber 12 comprises reactions such as thermal oxide, chemical vapor deposition or thermal diffusion, and thermal oxidative reaction is to carry out under aerobic environment usually, and reactions such as chemical vapor deposition and thermal diffusion then are to carry out under oxygen-free environment.
In addition, because the thermal response in the tubular reaction chamber 12 is normally at high temperature carried out, so when in tubular reaction chamber 12, carrying out the thermal response of anaerobic, just must guarantee to keep oxygen-free environment within tubular reaction chamber 12 and the load chamber 11, otherwise, if when extraneous air infiltrated tubular reaction chamber 12 or carries within the dress chamber 11, airborne oxygen just may enter within the wafer boat 16, and forms non-essential oxide on the surface of each wafer 16.For example, Fig. 2 is a synoptic diagram of making the method for silicon nitride layer 26, and the silicon nitride layer 26 of Fig. 2 is to be made in vertical reactor shown in Figure 1 10.As shown in Figure 2, wafer 16 comprises semiconductor substrate 20, at least one bit line (bit line) 22 is formed at semiconductor substrate 20 surfaces and a tungsten metal level 24 is formed on the bit line 22.Then, wafer 16 is sent within the tubular reaction chamber 12 of vertical reactor 10, subsequently and carry out a chemical vapour deposition reaction, to form a silicon nitride layer 26 on semiconductor substrate 20.Yet as shown in Figure 2, if extraneous air leaks inlet pipe shape reaction chamber 12 and load chamber 11, oxygen just can be under high temperature the surface of tungsten oxide metal level 24, and form a tungsten oxide layer 28, thereby improve the resistance value of tungsten metal level 24 in the surface of tungsten metal level 24.
Usually, vertical reactor 10 includes the motor (not shown) of bleeding in addition, is used for extracting the gas in the tubular reaction chamber 12, so within the tubular reaction chamber 12 situation that oxygen infiltrates can not take place usually.In addition, be to utilize fan or feed a large amount of nitrogen within the load chamber 11, so that the oxygen concentration within the load chamber 11 is lower than setting value, yet owing to utilize the exhaust efficiency of two kinds of methods such as fan and feeding nitrogen lower, so if air infiltrates the words within the load chamber 11, the air that infiltrates just can't be effectively and immediately is discharged from load chamber 11, this moment is if open movable shield 13, high temperature within the tubular reaction chamber 12 just can impel oxygen to produce oxidation reaction, and then just may form unnecessary accessory substance (by-product) on the surface of each wafer 16.In addition; though can be provided with an oxygen detection device (oxygen detector) (not shown) within the load chamber 11 usually; be used for monitoring the oxygen content in the load chamber 11; but because mostly the oxygen detection device is maintenance in a year once; therefore operate when malfunctioning when the oxygen detection device; the equipment personnel can't learn at once and repair; this moment, if the process engineer just can't immediately control the oxygen content in the load chamber 11 because part is loosening or valve such as does not fasten at factor and cause air to infiltrate load chamber 11.Whether therefore, seek a simple oxygen detection method of leaking, infiltrate within the load chamber 11 so that operating personnel can momentarily detect oxygen, be an important topic that improves the manufacture craft qualification rate.
Summary of the invention
The purpose of this invention is to provide a kind of leakage oxygen detection method, in order to check whether oxygen infiltrates in the load chamber of a reacting furnace, to solve foregoing problems.
According to purpose of the present invention, in preferred embodiment of the present invention, at first provide one to detect wafer, detect wafer and comprise that a substrate and is formed at the metallic film on the substrate, and metallic film has one first color.To detect wafer then is written in the reaction chamber by a load chamber, also take out subsequently and detect wafer, observe the surface of detecting wafer at last, to obtain one second color, and when second color differs from first color, show the situation that oxygen infiltrates has taken place in the load chamber.
Because the present invention only need observe the change color that detects wafer, can judge whether that just the aerobic air infiltration goes in the load chamber, therefore method of the present invention can be rapidly and is obtained testing result clearly.In addition, again because to detect the production process of wafer simple and easily, therefore the invention provides a leakage oxygen detection method that meets economic benefit.
Description of drawings
Fig. 1 is the synoptic diagram for a vertical reactor.
Fig. 2 is for making the method synoptic diagram of a silicon nitride layer 26.
Fig. 3 is the employed detection wafer of preferred embodiment of the present invention synoptic diagram.
Fig. 4 and Fig. 5 are the operation charts for the employed vertical reactor of the preferred embodiment of the present invention.
Fig. 6 is the process flow diagram for the leakage oxygen detection method of the preferred embodiment of the present invention.
Description of reference numerals
10 vertical reactors, 11 load chambers
12 tubular reaction chambers, 13 movable shields
14 wafer boats, 16 wafers
18 wafer boat lifters, 20 semiconductor substrates
22 bit lines, 24 tungsten metal levels
26 silicon nitride layers, 28 tungsten oxide layer
30 detect wafer 32 substrates
34 buffer thin films, 36 testing films
40 vertical reactors, 41 load chambers
42 tubular reaction chambers, 43 movable shields
44 wafer boats, 48 wafer boat lifters
50,52,54,56,58,60,62 leak oxygen detection step
Embodiment
The invention provides a kind of leakage oxygen detection method, and whether the present invention utilizes a detection wafer to check in the load chamber of a vertical reactor to be free air infiltration to go into, therefore, below explanation is to introduce employed detection chip architecture of leakage oxygen detection method of the present invention and relevant device earlier.Please refer to Fig. 3 to Fig. 5, Fig. 3 is the employed detection wafer of a preferred embodiment of the present invention synoptic diagram, and Fig. 4 to Fig. 5 is the operation chart of the employed vertical reactor of the preferred embodiment of the present invention.As shown in Figure 3, one detects wafer 30 comprises that a substrate 32, is formed at the testing film 36 on the substrate 32, and a buffer thin film 34 that is formed between substrate 32 and the testing film 36, is used for promoting the adhesive ability of 36 pairs of substrates 32 of testing film.In a preferred embodiment of the invention, substrate 32 is silicon substrates, 34 of buffer thin films are by titanium nitride (titanium nitride, TiN) constitute, and testing film 36 is tungsten metallic film (tungsten of a gold, W), its thickness approximately between 4000 and 8000 , is preferably 6000 .
Extremely shown in Figure 6 as Fig. 4, one vertical reactor 40 consists predominantly of a tubular reaction chamber 42, one is located at the load chamber 41 of tubular reaction chamber 42 belows, one is located at the movable shield 43 between load chamber 41 and the tubular reaction chamber 42, one is located at the wafer boat 44 within the load chamber 41, and a wafer boat lifter 48 that is used for mobile wafer boat 44.And as shown in Figure 4, when leakage oxygen detection method of the present invention is implemented on vertical reactor 40, at first, send in the load chamber 41 of vertical reactor 40 detecting wafer 30, and will detect wafer 30 and be loaded within the wafer boat 44, simultaneously and feed nitrogen constantly within load chamber 41.Subsequently,, open movable shield 43, utilize wafer boat lifter 48 that wafer boat 44 is sent within the tubular reaction chamber 42 along the direction shown in the arrow B B ' then, but do not carry out any thermal response in tubular reaction chamber 42 as Fig. 4 and shown in Figure 5.And, in the temperature in the tubular reaction chamber 42 and the tubular reaction chamber 42 institute to desire the process conditions of the thermal response of carrying out identical, the interior temperature of common tubular reaction chamber 42 is preferably 700 ℃ between 600 ℃ and 800 ℃.In addition, the nitrogen flow rates in the load chamber 41 also are same as the general technology condition, generally speaking, the flow velocity of nitrogen between 100 (rise/minute, L/min) and between the 200L/min, 150L/min preferably.
Then, as shown in Figure 4, utilize wafer boat lifter 48 that wafer boat 44 is moved along the direction shown in the arrow C C ', with wafer boat 44 in tubular reaction chamber 42 moves to load chamber 41, will detect wafer 30 subsequently again and take out from vertical reactor 40.At last, observe the color that detects wafer 30 surfaces, when if the color on detection wafer 30 surfaces presents the situation of non-gold (for example: yellow green or blueness), that is the color that detects wafer 30 surfaces is when differing from tungsten metallic film 36 golden, just represent to be subjected within the load chamber 41 pollution of oxygen, and must check whether vertical reactor 40 has the loosening or valve of part situation such as not fasten.
What deserves to be mentioned is, because the temperature in the tubular reaction chamber 42 is between 600 ℃ and 800 ℃, therefore if extraneous air infiltrates the words within the load chamber 41, then when movable shield 43 is opened, oxygen in the air just can oxidation detect the tungsten metallic film 36 on wafer 30 surfaces, and forms a tungsten oxide layer in the surface of detecting wafer 30.And it is golden that the color of tungsten metallic film 36 is generally, and the color of tungsten oxide layer then presents different colors, for example yellow green or blueness according to degree of oxidation.Therefore, when the color that detects wafer 30 surfaces present non-when golden, but just be subjected to the pollution of oxygen within the inference load chamber 41, and the present invention is the change color that detects wafer 30 via observing, to judge whether oxygen infiltrates within the load chamber 41.
Please refer to Fig. 6, Fig. 6 is the process flow diagram of the leakage oxygen detection method of the preferred embodiment of the present invention.As shown in Figure 6, leakage oxygen detection method of the present invention comprises the following steps:
Step 50: beginning;
Step 52: provide one to detect wafer 30, the surface that detect wafer 30 this moment is one first color;
Step 54: will detect wafer 30 and pack in the tubular reaction chamber 42 by the load chamber 41 of vertical reactor 40;
Step 56: will detect wafer 30 and from vertical reactor 40, take out;
Step 58: the color of observing detection wafer 30 surfaces is to obtain one second color;
Step 60: compare first color and second color, when first color is equal to second color, the load chamber 41 of vertical reactor 40 is that the situation that oxygen infiltrates does not take place, otherwise, when first color was different from second color, the load chamber 41 of vertical reactor 40 was that the situation that oxygen infiltrates has taken place;
Step 62: finish.
In brief, the invention provides one and detect wafer 30, and will detect wafer 30 and be written in the vertical reactor 40, to detect wafer 30 subsequently again takes out, last also by observing the change color that detects wafer 30 surfaces, whether there is the situation of gas leakage to take place to judge vertical reactor 40 interior load chambers 41.
Must be noted that leakage oxygen detection method of the present invention is not can only be implemented in the vertical reactor 40, and may be implemented in any reaction cavity (chamber) that must under high temperature and oxygen-free environment, react.And the material of testing film 36 also is not limited to the tungsten metal, any to oxygen sensitive and color and the visibly different material of its oxide all applicable to testing film 36.
Compared with prior art, whether the present invention utilizes detection wafer 30 to check to have the situation of leaking oxygen to take place in the load chamber 41 of vertical reactor 40.Because the present invention only need observe the physical change (being change color) that detects wafer 30, can judge whether that just the aerobic air infiltration goes in the load chamber 41 of vertical reactor 40, therefore method of the present invention can be rapidly and is obtained testing result clearly.In addition, again because to detect the production process of wafer 30 simple and easily, therefore the invention provides a leakage oxygen detection method that meets economic benefit.
The above only is the preferred embodiments of the present invention, and all equivalences of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (12)
1. one kind leaks the oxygen detection method, and this method comprises:
Provide one to detect wafer, described detection wafer comprises that a substrate and is formed at the metallic film on the described substrate, and described metallic film has one first color;
Described detection wafer is packed in the reaction chamber with a load chamber, take out described detection wafer subsequently; And
Observe the surface of described detection wafer, obtaining one second color, and when described second color differs from described first color, show that oxygen has taken place in the described load chamber to infiltrate.
2. the method for claim 1, wherein said metallic film is a tungsten metallic film, and described first color is golden.
3. method as claimed in claim 2, wherein said substrate is a silicon substrate, and described detection wafer also comprises the titanium nitride layer, described titanium nitride layer is formed between described tungsten metallic film and the described silicon substrate, is used for improving the adhesive ability of described tungsten metallic film to described silicon substrate.
4. method as claimed in claim 1, wherein said load chamber and described reaction chamber are installed within the vertical reactor, and described vertical reactor also comprises:
One wafer boat is arranged in the described load chamber and is used for loading described semiconductor wafer; And
One wafer boat lifter is used for described wafer boat is moved between described load chamber and described reaction chamber.
5. method as claimed in claim 4, wherein said method also comprise constantly feed nitrogen in described load chambers, and the flow velocity of described nitrogen is between 100 liters/minute and 200 liters/minute.
6. method as claimed in claim 5, the temperature of wherein said reaction chamber is between 600 ℃ and 800 ℃.
7. one kind leaks the oxygen detection method, and described method comprises:
Provide one to detect wafer, described detection wafer comprises that a substrate and is formed at the testing film on this substrate, and described testing film has one first color;
Described detection wafer is packed in the reaction chamber with a load chamber, take out described detection wafer subsequently; And
Observe the surface of described detection wafer, obtaining one second color, and when described second color differs from described first color, show that oxygen has taken place in the described load chamber to infiltrate.
8. method as claimed in claim 7, wherein said substrate is a silicon substrate, and described testing film is a metallic film.
9. method as claimed in claim 7, wherein said detection wafer also comprises a buffer thin film, described buffer thin film is formed between described metallic film and the described silicon substrate, is used for improving the adhesive ability of described metallic film to described silicon substrate.
10. method as claimed in claim 9, wherein said metallic film are tungsten metallic films, and described first color is golden, and described buffer thin film is the titanium nitride layer.
In described load chamber, feed nitrogen 11. method as claimed in claim 7, wherein said method also comprise constantly, and the flow velocity of described nitrogen is between 100L/min and 200L/min.
12. method as claimed in claim 11, the temperature of wherein said reaction chamber is between 600 ℃ and 800 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410033255 CN1677071A (en) | 2004-03-29 | 2004-03-29 | Oxygen leakage detecting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410033255 CN1677071A (en) | 2004-03-29 | 2004-03-29 | Oxygen leakage detecting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1677071A true CN1677071A (en) | 2005-10-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410033255 Pending CN1677071A (en) | 2004-03-29 | 2004-03-29 | Oxygen leakage detecting method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1677071A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111279173A (en) * | 2017-11-02 | 2020-06-12 | 三菱电机株式会社 | Method for testing semiconductor device and method for manufacturing semiconductor device |
-
2004
- 2004-03-29 CN CN 200410033255 patent/CN1677071A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111279173A (en) * | 2017-11-02 | 2020-06-12 | 三菱电机株式会社 | Method for testing semiconductor device and method for manufacturing semiconductor device |
| CN111279173B (en) * | 2017-11-02 | 2022-06-24 | 三菱电机株式会社 | Method for testing semiconductor device and method for manufacturing semiconductor device |
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