CN1671047A - Method for stress compensation of crystal frequency temperature characteristic based on temperature sensing material - Google Patents
Method for stress compensation of crystal frequency temperature characteristic based on temperature sensing material Download PDFInfo
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- CN1671047A CN1671047A CN 200510041941 CN200510041941A CN1671047A CN 1671047 A CN1671047 A CN 1671047A CN 200510041941 CN200510041941 CN 200510041941 CN 200510041941 A CN200510041941 A CN 200510041941A CN 1671047 A CN1671047 A CN 1671047A
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Abstract
This invention discloses a method for compensating crystal frequency temperature property based on temperature sensing material stress, which contains using vacuum plating method to plate temperature sensing double-metal material on the crystal chip or electrode of crystal resonator which can compensate the frequency variation due to temperature of crystal. Said method can make the frequency temperature property of crystal reach positive and negative 0.2ppm and simply the current circuit of temperature compensation with small volume and low cost.
Description
Technical field
The present invention relates to the crystal resonator frequency compensation method, specifically is a kind of method based on temperature sensing material stress compensation crystal temperature effect frequency characteristic.
Background technology
Crystal oscillator has been widely used in technical fields such as communication, post and telecommunications, Aero-Space, defence and military, electronic technology and instrument and meter.Main clock or the standard frequency source that is used as numerous equipment of these aspects.Along with the continuous progress of science and technology, people are more and more higher to the requirement of the frequency-temperature characterisitic of crystal oscillator and volume, power consumption, cost.Frequency-the temperature compensation of existing temperature compensating crystal oscillator almost is the frequency-temperature characterisitic according to quartz crystal device entirely, the method of handling with circuit compensates, promptly handle, produce the variation that the bucking voltage of crystal oscillator is come compensating frequency with simulation, numeral or microcomputer.Generally speaking, with the method for analog compensation, in-50 ℃～+ 85 ℃ scope, can obtain the crystal oscillator of frequency-temperature stability for ± 1-2ppm, its precision is lower; Though and frequency-temperature stability high price height, the power consumption of the crystal oscillator of employing numeral and computer compensation are big.The AT of present domestic employing computer compensation cuts crystal oscillator, in-50 ℃～+ 85 ℃ scope frequency-temperature stability can reach ± more than the 0.5ppm.Because adopt the crystal oscillator structure more complicated of above-mentioned line build-out method compensation, volume is big, power consumption is high, cost is high, be difficult to satisfy the especially needs of mobile phone and the development of other moving communicating field of development in science and technology in recent years; Also be difficult to adapt to the competition in compensation crystal oscillator market.The compensation crystal oscillator of using as the present mobile phone of China is 100% solve by import almost.
Summary of the invention
The objective of the invention is to overcome the deficiency of prior art, a kind of compensation method of handling crystal temperature effect-frequency characteristic based on stress is provided.The frequency of utilizing quartz crystal device comes compensation temperature to the influence that frequency produced with the characteristics that the stress that adds thereon changes, to constitute the temperature compensating crystal oscillator of a new generation.
Realize that technical scheme of the present invention is, adopt the method for vacuum coating,, be plated on the crystal wafer of crystal resonator thermally sensitive sensing material such as bimetallic material, perhaps the single sensing material that expands with heat and contract with cold is plated on the electrode of crystal, forms bimetallic electrode.When variations in temperature, by the distortion of sensing material, produce the stress that puts on crystal, self varies with temperature the frequency change that is produced compensated crystal.When carrying out the compensation of stress processing, zero stress point temperature with temperature sensing material is a reference point, select the pairing frequency-temperature characterisitic frequency band of crystal wafer corner cut to compensate near linearity, when temperature departure zero stress point descends, the sensing material distortion, the stress that is applied on the crystal increases thereupon, causes that the frequency of crystal reduces, and the pulling crystal improves temperature-frequency characteristic.
The present invention only adopts the stress compensation crystal frequency of temperature sensing material, just can the frequency-temperature characterisitic of crystal be reached ± 1ppm-50 ℃～+ 85 ℃ or wideer temperature range.Can satisfy the required precision of most of crystal oscillators.For the higher crystal oscillator of required precision, can be on the basis of carrying out temperature sensing material stress compensation crystal frequency, be aided with single-chip microcomputer or conventional indemnifying measures such as analog or digital process circuit, the frequency-temperature characterisitic of crystal oscillator reached ± 0.2ppm, in addition higher.The compensated line of the present invention then circuit than used usually is simpler.
The present invention utilizes the power-frequency characteristic of crystal and relation that temperature-the frequency characteristic compensates mutually to create new high performance temperature compensated resonator.Its method is that thermally sensitive sensing material directly is fixed on the crystal or crystalline electrode of resonator, and under the condition of variations in temperature, the caused frequency change compensated crystal of the stress frequency that produces with temperature sensing material is with variation of temperature.The pattern of the line build-out that stress compensation method of the present invention fundamentally is different from prior art on the principle and is adopted is a kind of brand-new compensation method.It simplifies even has omitted the various circuits of temperature-compensating greatly, the crystal oscillator designs simplification that is constituted, and precision height, volume are little, and cost is low and power consumption is little.Especially it is to be noted that existing temperature compensating crystal oscillator has almost all adopted fundamental crystal rather than overtone crystal to carry out frequency compensation.Its reason is but that the stimulating of fundamental crystal is good.But its stability and aging characteristics are poor.Though overtone crystal stability and aging index are significantly better than fundamental crystal, the frequency of overtone crystal is difficult to carry out the pulling of broad frequency with the method for prior art, so be difficult to be used in voltage-controlled and the temperature compensating crystal oscillator.The at present external best temperature compensating crystal oscillator of performance all is to adopt good stability and temperature compensating crystal oscillator that crystal such as (as overtone) of stimulating difference is made.Because but the stable fine and stimulating of this crystal is very poor, its output frequency is that the method by frequency synthesis obtains.Such oscillator is generally used on the military products, and prices are rather stiff for it, can't resolve its performance and the conflicting difficult problem of price with the line build-out method of prior art at all.And the method that adopts stress of the present invention to handle then can address this problem satisfactorily.And obtain than the better frequency-temperature characterisitic of the temperature compensating crystal oscillator of prior art, phase noise characteristic, frequency stability and aging characteristics.Exactly because crystal such as the overtone of high stable still have the characteristic that can spur adjusting in narrower frequency range, when the higher precision of needs, can be on the basis that applied stress is handled, only in very narrow frequency range, the method that adopts simple circuit to handle is again regulated, and just can realize further obtaining more high-precision effect.The present invention is with simple stress compensation method, can obtain the effect of good temperature-compensating, so be particularly suitable in enormous quantities, high-precision production to temperature compensating crystal oscillator, combine with simple line build-out technology again, can further improve the starting point and the aggregate level of this class oscillator.For the sizable ordinary temp compensated crystal oscillator of proportion, owing to removed the circuit control section, its short steady index and phase noise characteristic are better.Will obtain huge economic benefit in this application.
Description of drawings
Fig. 1 a is that temperature sensing material of the present invention is fixed on the schematic diagram on the crystal wafer
Fig. 1 b is that temperature sensing material of the present invention is fixed on the schematic diagram on the electrode
Fig. 2 is the frequency-temperature characteristics figure of crystal and crystal oscillator
Fig. 3 is the frequency-temperature characteristics figure of the crystal oscillator behind the stress compensation of the present invention
Fig. 4 is the new line block diagram of the present invention behind stress compensation
Fig. 5 is the temperature compensating crystal oscillator circuit block diagram of prior art
Embodiment
The present invention is described in detail below in conjunction with accompanying drawing.
The present invention along with the characteristics that the variation of the stress that is applied thereto changes, adopts the temperature sensor influence to be added on stress intensity on the crystal resonator according to the frequency of oscillator, and the frequency of coming compensated crystal oscillator is with variation of temperature.And the power of crystal and crystal oscillator-frequency effect is exactly when resonator is subjected to stress, and its resonance frequency can change thereupon.This stress can be by the support of external force, acceleration and vibration, electrode deformation, crystal or other factor and is caused.Along with the increase that applies power, the variation of the frequency of oscillation of crystal also increases, and the variation that power reduces frequency also reduces thereupon.Be the relational expression of concrete crystal frequency increment STRESS VARIATION suffered below with it:
The frequency increment of Δ f-resonator in the formula;
K
fThe Laplace coefficient of-resonator;
The resonance frequency of f-resonator;
N-resonance overtone number of times;
The diameter of D-resonator;
Δ F-STRESS VARIATION.
From (1) formula as can be seen the frequency change of crystal be subjected to the influence of the factors such as frequency, diameter and resonance times of resonator.But concerning same crystal, K
f, f, n, D be constant, this moment, the variation of frequency change stress suffered with it of crystal was linear in theory.Though also have some frequency change of expressing crystal with add with its on expression formula and (1) formula of STRESS VARIATION have difference, the linear changing relation between power-frequency is the same.
The present invention directly is plated in temperature sensing material on the crystal wafer of crystal resonator, perhaps is plated on the electrode of crystal wafer.When temperature changes, total body frequency-temperature characterisitic of crystal and crystal oscillator can change according to the frequency-temperature characterisitic of crystal itself and the comprehensive function result of Qi Li-frequency characteristic, just, variations in temperature produces deformation along with making temperature sensing material earlier, because being tightly linked of this material and crystal, making crystal itself meet with stresses to change and cause that its frequency changes.The purpose of compensation is to make by the caused frequency change of stress to cancel out each other with the frequency change that temperature produces with crystal itself.
In Fig. 1 a, the present invention is plated in the method that produces the temperature sensing material 3 usefulness plated films of the deformation of significantly expanding with heat and contract with cold along with variations in temperature on the crystal wafer 2.In Fig. 1 b, the method for temperature sensing material 3 usefulness plated films is plated on the electrode 1 of crystal.By the deformation of temperature sensing material 3, produce the stress that acts on crystal wafer 2 or electrode 1 corresponding site.The present invention selects with bimetallic materials such as the comparatively sensitive copper-nickel of the deformation of temperature, aluminium-steel, copper-steel, copper-aluminium as temperature sensing material 3.Employing secondary vacuum coating method just bimetallic sensing material 3 directly is plated on the crystal wafer 2.If temperature sensing material 3 is plated on the crystalline electrode 1, because crystalline electrode 1 of the present invention is generally metal aluminium electrode or gold electrode, the tangible single metal material of the distortion of can selecting to expand with heat and contract with cold is plated on the crystalline electrode 1, forms bimetallic sensing material 3.For example, when crystalline electrode 1 is the aluminium electrode, then adopt vacuum coating method, another kind of metal material of copper or steel evaporation on electrode 1, can be formed aluminium-steel or aluminium-copper bi-metal sensing material crystalline electrode; When electrode 1 was gold electrode, then plating aluminium constituted gold-Al bimetal sensing material crystalline electrode.By the deformation force of bimetallic electrode 1, the frequency that changes crystal wafer 2 is with STRESS VARIATION.
As shown in Figure 2, the frequency-temperature characterisitic of crystal and crystal oscillator is different and different according to the machining angle of crystal, mainly is cubic curve or characteristic similarly.
Curve from Fig. 2 draws, and when the corner cut difference of crystal, with the rising of temperature, can make the frequency-temperature characteristics of crystal two kinds of variations of positive slope and negative slope occur in most of temperature ranges.According to the curve of Fig. 2, select the corner cut of crystal, can finish simple linear compensation to the theoretical model that influences of frequency with the stress in (1) formula.In carrying out the stress compensation process, the temperature of choose reasonable zero stress point.So-called zero stress point is exactly at a specific temperature spot, and temperature sensing material 3 is in a deformation-free relatively situation, and when being higher or lower than this temperature, temperature sensing material 3 all can deformation take place and produce stress to crystal wafer 2.Only from the purpose of linear compensation, the zero stress point should be chosen on the edge of crystal 2 operating temperature range, simultaneously, usually will look after the zero temperature coefficient point of crystal 2 itself again.From the processing technology convenience of crystal, zero stress point usually is chosen in high temperature dot.In order to obtain compensation effect, the main frequency-temperature characterisitic section of crystal 2 can be a negative characteristic.Just along with the decrease of temperature frequency values becomes big.For this reason, the present invention selects the corner cut of crystal wafer 2 according to this characteristic.Like this, when temperature departure zero stress point descends, then temperature sensing material 3 impose on crystal wafer 2 stress along with increase, therefore that the frequency of crystal 2 is drop-down gradually.Just make crystal 2 negative frequency-temperature characteristics section originally improve the characteristic curve that becomes comparatively smooth.As long as the corner cut of crystal wafer 2, the effect of temperature sensing material 3 stress compensations etc. can well be cooperated, just can obtain quite good frequency-temperature characterisitic.
Stress compensation crystal frequency of the present invention-temperature characterisitic embodiment:
It is that the crystal corner cut condition of negative characteristic is carried out frequency compensation that the present invention typically selects frequency-temperature characteristics section.Under temperature is vacuum condition about 85 ℃, bimetallic aluminium-copper or aluminium-steel directly are plated in crystal wafer 2 one edges, as shown in Figure 1a.Or on the aluminium electrode 1 of crystal plating layer of copper or steel membrane.The coating shape is identical with aluminium electrode 1 shape, and (perhaps conversely, copper or steel are interior, and aluminium outside) is shown in Fig. 1 b.In this way, the bimetallic aluminium-copper or the aluminium-steel electrode of crystal 2 have been formed.When temperature drops to-50 ℃ process from 85 ℃ of the zero stress point temperature of bimetallic sensing material 3, on the crystal 2 or the bimetallic sensing material 3 aluminium-copper of electrode 1 or aluminium-steel distortion, generation puts on the stress of crystal 2, make the frequency-temperature characteristics of this crystal oscillator in Fig. 2 be rotated counterclockwise variation, frequency deviation is reduced, frequency trend standard value.Obtained as shown in Figure 3 near the compensated curve of linear change.
Through compensation deals of the present invention, can obviously improve the frequency-temperature characterisitic of crystal and crystal oscillator.Can in very wide temperature range, obtain ± frequency-temperature characterisitic about 1ppm.This needs that do not need process can satisfy most products such as mobile phone with the technical indicator of the temperature compensating crystal oscillator that processing method obtained of circuit.Can only reach with the frequency stability of temperature of most of crystal in same temperature range ± tens ppm compare, and its technical indicator is greatly improved.The present invention also provides compensation method for producing high precision temperature compensation crystal oscillator.On the basis of the frequency-temperature characterisitic that obtains above-mentioned compensation, only in very narrow temperature range, be aided with simple, conventional line build-out method, just be easy to obtain the compensation precision of frequency-temperature characterisitic up to ± 0.2ppm.
Also can cut the crystal plated film with above-mentioned sensing material and constitute the compensation effect that electrode produces overtone AT, additional simpler compensated line on the basis of just adopting stress compensation method step compensation of the present invention, can obtain better compensation effect effectively in the frequency that spurs overtone crystal among a small circle.For example, be the overtone crystal of 38.88MHz to frequency, the stress compensation method can produce and be not less than-frequency change of 1KHz.But with the method that traditional circuit is regulated, above-mentioned overtone crystal frequency can only produce the frequency change of several Hz to tens Hz.The difficult problem that this overtone crystal frequency that has just solved good stability preferably is difficult to regulate with circuit of the prior art compensation is for bright prospects have been opened up in the application of temperature-compensating class overtone crystal.
Fig. 1 a, Fig. 1 b and Fig. 4 and Fig. 5 are compared, and as can be seen, in prior art shown in Figure 5, temperature compensating crystal oscillator mainly is made up of temperature sensor, temperature compensation circuit, crystal oscillator three parts, and this three part is indispensable.Owing to have temperature sensor and temperature-compensation circuit, make crystal oscillator have the structure of larger volume and complexity with the art methods compensation.And in stress compensation of the present invention, only need on the crystal wafer among Fig. 1 a 2, plate one deck bimetallic sensing material 3 or in Fig. 1 b, plate monometallic sensing material 3 on the crystalline electrode 1, temperature sensor and temperature compensation circuit two large divisions structure that the frame of broken lines in just can alternate figures 5 goes out.Obviously, than prior art shown in Figure 5, the change on structure, volume and execution mode all is very significant by the present invention shown in Fig. 1 a Fig. 1 b.Even in the new line structured flowchart 4 behind stress compensation, also only outside crystal, added a simple oscillator circuit, but its general structure, volume also are significantly smaller than the prior art among Fig. 5.From Fig. 1 a, Fig. 1 b, Fig. 4 as can be seen, because the present invention has saved a large amount of compensated lines, thereby the volume of crystal oscillator is dwindled greatly, cost reduces.Even if, also be to adopt the simplest circuit treatment measures with the further compensation of circuit.The requirement that this has also reduced significantly to the circuit device has reduced cost from another point of view.
What be worth proposition is that crystal 2 usually negative frequency difference can occur after meeting with stresses.So, to preset positive frequency difference to the processing of crystal wafer 2.The technology of this respect guarantees the overall frequency-temperature characterisitic of the crystal that obtains in the batch process is improved greatly.The qualification rate that satisfies one-pass finished reaches more than 80%.
By the evidence to a large amount of crystal, on the high and low temperature both direction of the zero stress point of crystal (expand and shrink, crooked direction is different), the variation of frequency all is to change to low direction.Can form with the zero stress point be all downward compensation that is bordering on broken line of the both direction at center near linear temperature-compensated frequency characteristic.So just, obtain wideer compensation range.
Claims (5)
1. based on the method for temperature sensing material stress compensation of crystal frequency temperature characteristic, it is characterized in that adopting film plating process, temperature sensing material (3) is plated on the electrode of the crystal wafer (2) of crystal resonator or crystal on (1), when variations in temperature, distortion by sensing material (3), generation puts on the stress of crystal (2), and compensated crystal (2) self varies with temperature the frequency change that is produced.
2. the method based on stress compensation of crystal frequency temperature characteristic according to claim 1, it is characterized in that the zero stress temperature spot with temperature sensing material (3) is a reference point, select the pairing frequency-temperature characterisitic frequency band of crystal (2) corner cut to compensate near linearity, when temperature departure zero stress point descends, the distortional stress of sensing material (3), pulling crystal (2) reduces itself because the caused frequency change of variations in temperature.
3. the method based on stress compensation of crystal frequency temperature characteristic according to claim 1 is characterized in that described temperature sensing material (3) the responsive bimetallic material of can selecting to expand with heat and contract with cold.
4. the method based on stress compensation of crystal frequency temperature characteristic according to claim 1, it is characterized in that adopting the stress compensation crystal frequency of temperature sensing material (3), can the frequency-temperature characterisitic of crystal be reached ± 1ppm-50 ℃～+ 85 ℃ temperature range.
5. the method based on stress compensation of crystal frequency temperature characteristic according to claim 1, it is characterized in that handling on the basis of compensated crystal frequency at stress, be aided with conventional simple compensation line build-out, can obtain the high-precision crystal oscillator of frequency-temperature characterisitic for ± 0.2ppm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104090446A (en) * | 2014-06-27 | 2014-10-08 | 哈尔滨工业大学深圳研究生院 | Method for influencing crystal light refraction index through stress compensation temperature |
| CN107465393A (en) * | 2017-07-05 | 2017-12-12 | 广州昂宝电子有限公司 | Frequency compensated system and method for Real Time Clock System |
| CN109543320A (en) * | 2018-11-29 | 2019-03-29 | 西安电子科技大学 | A kind of progress AT cuts the stress compensation film design method of temperature compensating crystal oscillator |
| CN111404507A (en) * | 2020-03-30 | 2020-07-10 | 西安电子科技大学 | Crystal resonator adopting strip-shaped compensation film for stress compensation |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06310975A (en) * | 1993-04-23 | 1994-11-04 | Keiji Sugiyama | Frequency stabilizing method in wide temperature range for crystal oscillator and temperature compensation type crystal oscillator |
| JPH0888532A (en) * | 1994-09-19 | 1996-04-02 | Daishinku Co | Temperature compensation piezoelectric oscillation device |
| SE514247C2 (en) * | 1999-06-04 | 2001-01-29 | Allgon Ab | Temperature compensated rod resonator |
| US6747389B2 (en) * | 2001-06-11 | 2004-06-08 | Intel Corporation | Apparatus for adjusting the resonance frequency of a microelectromechanical (MEMS) resonator using tensile/compressive strain and applications therefor |
-
2005
- 2005-04-11 CN CNB2005100419410A patent/CN100459428C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104090446A (en) * | 2014-06-27 | 2014-10-08 | 哈尔滨工业大学深圳研究生院 | Method for influencing crystal light refraction index through stress compensation temperature |
| CN107465393A (en) * | 2017-07-05 | 2017-12-12 | 广州昂宝电子有限公司 | Frequency compensated system and method for Real Time Clock System |
| US10734947B2 (en) | 2017-07-05 | 2020-08-04 | Guangzhou On-Bright Electronics Co., Ltd. | Systems and methods for frequency compensation of real-time-clock systems |
| US11012032B2 (en) | 2017-07-05 | 2021-05-18 | Guangzhou On-Bright Electronics Co., Ltd. | Systems and methods for frequency compensation of real-time-clock systems |
| CN109543320A (en) * | 2018-11-29 | 2019-03-29 | 西安电子科技大学 | A kind of progress AT cuts the stress compensation film design method of temperature compensating crystal oscillator |
| CN111404507A (en) * | 2020-03-30 | 2020-07-10 | 西安电子科技大学 | Crystal resonator adopting strip-shaped compensation film for stress compensation |
| CN111404507B (en) * | 2020-03-30 | 2024-04-02 | 西安电子科技大学 | Crystal resonator adopting bar-shaped compensation film stress compensation |
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