CN1670850B - 接触探针存储fet传感器及写加热器装置 - Google Patents
接触探针存储fet传感器及写加热器装置 Download PDFInfo
- Publication number
- CN1670850B CN1670850B CN2004100818308A CN200410081830A CN1670850B CN 1670850 B CN1670850 B CN 1670850B CN 2004100818308 A CN2004100818308 A CN 2004100818308A CN 200410081830 A CN200410081830 A CN 200410081830A CN 1670850 B CN1670850 B CN 1670850B
- Authority
- CN
- China
- Prior art keywords
- cantilever
- fet
- medium
- well heater
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/08—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by electric charge or by variation of electric resistance or capacitance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/16—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by mechanical cutting, deforming or pressing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1409—Heads
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- Micromachines (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/736600 | 2003-12-17 | ||
US10/736,600 US7460462B2 (en) | 2003-12-17 | 2003-12-17 | Contact probe storage fet sensor and write heater arrangements |
US10/827,370 US7542402B2 (en) | 2003-12-17 | 2004-04-20 | Contact probe storage FET sensor and write heater arrangements |
US10/827370 | 2004-04-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1670850A CN1670850A (zh) | 2005-09-21 |
CN1670850B true CN1670850B (zh) | 2010-10-20 |
Family
ID=34527193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004100818308A Expired - Fee Related CN1670850B (zh) | 2003-12-17 | 2004-12-17 | 接触探针存储fet传感器及写加热器装置 |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP1544859A1 (zh) |
CN (1) | CN1670850B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7460462B2 (en) * | 2003-12-17 | 2008-12-02 | Hewlett-Packard Development Company, L.P. | Contact probe storage fet sensor and write heater arrangements |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3920930A (en) * | 1974-04-08 | 1975-11-18 | John James Sobczyk | Field effect recordings and semiconductor playback devices |
US5323377A (en) * | 1992-11-27 | 1994-06-21 | Chen Zhi Q | Electrical data recording and retrieval based on impedance variation |
KR950024146A (ko) * | 1994-01-31 | 1995-08-21 | 모리시타 요이찌 | 정보기록재생장치 및 정보기록재생방법 |
US6477132B1 (en) * | 1998-08-19 | 2002-11-05 | Canon Kabushiki Kaisha | Probe and information recording/reproduction apparatus using the same |
KR100366701B1 (ko) * | 1999-11-09 | 2003-01-06 | 삼성전자 주식회사 | 전계 효과 트랜지스터 채널 구조가 형성된 스캐닝 프로브마이크로스코프의 탐침 및 그 제작 방법 |
TW550622B (en) * | 2000-11-03 | 2003-09-01 | Ibm | Data storage device and read/write component for data storage device |
KR100389903B1 (ko) * | 2000-12-01 | 2003-07-04 | 삼성전자주식회사 | 접촉 저항 측정을 이용한 정보 저장 장치 및 그 기록과재생 방법 |
DE10155930B4 (de) * | 2001-11-14 | 2020-09-24 | Nano Analytik Gmbh | Feldeffekttransistor-Sensor |
US7460462B2 (en) * | 2003-12-17 | 2008-12-02 | Hewlett-Packard Development Company, L.P. | Contact probe storage fet sensor and write heater arrangements |
-
2004
- 2004-12-15 EP EP04257814A patent/EP1544859A1/en not_active Withdrawn
- 2004-12-17 CN CN2004100818308A patent/CN1670850B/zh not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
---|
JP特开2002-184051A 2002.06.28 |
Also Published As
Publication number | Publication date |
---|---|
CN1670850A (zh) | 2005-09-21 |
EP1544859A1 (en) | 2005-06-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEAGATE TECHNOLOGY SCIENCE & TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: HEWLETT-PACKARAD DEVELOPMENT INC. Effective date: 20070413 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070413 Address after: American California Applicant after: Seagate Technology LLC Address before: American Texas Applicant before: Hewlett-Packard Development Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101020 Termination date: 20101217 |