CN1670550A - Method for realizing silicon based silicon dioxde waveguide polarization irrelevancy by employing non-planar process - Google Patents
Method for realizing silicon based silicon dioxde waveguide polarization irrelevancy by employing non-planar process Download PDFInfo
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- CN1670550A CN1670550A CN 200410031518 CN200410031518A CN1670550A CN 1670550 A CN1670550 A CN 1670550A CN 200410031518 CN200410031518 CN 200410031518 CN 200410031518 A CN200410031518 A CN 200410031518A CN 1670550 A CN1670550 A CN 1670550A
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Abstract
This invention relates to a silicon base dioxide silicon wave polarization switch method by use of non-plane process and is characterized by the following steps: a, etching the ion on the silicon underlay for wave guide core area space; b, forming down cover layer and side cover layer with thickness of 15 mu m; c, growing core area by use of ion strengthening chemical gas deposition method and flame solution in wave guide core area; d, growing upper cover layer of 15 mu m by use of ion strengthening chemical gas deposition method or flame solution; f, polishing and removing the core layer of the oxidation layer, upper cover of materials; whole silicon dioxide silicon polarization wave guide process.
Description
Technical field
The present invention relates to the device of silicon based silicon dioxide stress optical waveguide one class, in order to realize the polarization-insensitive of such waveguide, particularly silicon based silicon dioxide array waveguide grating (AWG), photoswitch and Mach-Ceng Degan relate to the polarization-insensitive of (MZI) type device.
Background technology
The silicon based silicon dioxide optical waveguide is the optical waveguide that forms after etching at first deposition of silica on the silicon substrate, because the thermal expansivity of silicon dioxide and silicon substrate is inconsistent, the waveguide of preparation exists stress asymmetric, and such optical waveguide shows as bigger stress birefrin, double refractive inde about 10
-4Magnitude, and general device all requires polarization-insensitive, needs the double refractive inde of whole wave guide is dropped to 10
-5Magnitude, therefore realize silicon based silicon dioxide stress optical waveguide polarization insensitive be the prerequisite of the type waveguide widespread use.
At present in the world the method for silicon based silicon dioxide polarization correlative compensation there is the deposition of amorphous silicon films method, insert the half-wave plate method, the stress relief channel process, top covering heavy doping B, the P method, the waveguide of different in width mixes integrated method, twin-core Qu Fa etc. (see document: [1] Hiroshi Takahashi, YoshinoriHibino, Yasuji Ohmori, Masao Kawachi.Polarisation-Insensitive Arrayed-Waveguide Wavelength Multiplexer with Birefringence Compensation Film.IEEE Photonics Technology Letters, 1993,5 (6): 707-709.[2] Yasuyuki Inoue, Hiroshi Takahashi, Shinji Ando, et al.Elimination of polarization sensitivity insilica-based wavelength division multiplexer using a polyimide half waveplate, IEEE J.of Lightwave Technology.1997,15 (10): 1974-1957.[3] S.Suzuki, S.Sumida, Y.Inoue, et al.Polarisation insensitive arrayed-waveguide gratingsusing dopant rich silica-based glass with ghermal expansion adjusted to Sisubstrate.Electronics Letters.1997,33 (13): 1173-1174.[4] E.Wildermuth, Ch.Nadler, M.Lanker, et al.Penalty-free polarisation compensation of SiO
2/ Siarrayed waveguide grating wavelength multiplexers using stress releasegrooves.Electronics letters, 1998,34 (20): 1661:1662.[5] Y.Inoue, M.Itoh, Y.Hibino, et al.Novel birefringence compensating AWG design.Optical Soc-iety of America.2000, WB4-1.[6] K.Worhoff, B.J.Offrein, P.V.Lambeck, etal.Rirefringence Compensation Applying Double-Core Waveguide Structures.IEEE Photonics Technology Letters, 11 (2): 206-208.).And change traditional slab guide preparation technology, adopt the method for first etching rear oxidation, growth, make waveguide sandwich one deck silicon (Si) material of preparation, utilize the big thermal expansivity of Si material to carry out the lateral stress compensation, silicon based silicon dioxide wave is reached unanimity with the suffered stress of vertical direction in the horizontal direction.Realize the polarization-insensitive of waveguide and related device, also do not report in the world.
Adopt analysis of finite element method to have the stress distribution of skim silicon in the side direction of silicon based silicon dioxide wave, the Stress calculation model as shown in Figure 1, its numerical simulation result such as Fig. 2, wherein Fig. 2-1 is respectively that the waveguide side direction does not have the Si material and Si material stress distribution is in the horizontal direction arranged with Fig. 2-2, Fig. 2-3 and Fig. 2-4 are respectively that the waveguide side direction does not have the Si material and the stress distribution of Si material in vertical direction arranged, in the horizontal direction owing to there are silicon materials in the vertical direction in waveguide, its big thermal expansivity can make waveguide consistent with horizontal direction institute compression chord at vertical direction institute compression chord, so at level and vertical mould refractive index n
TE, n
TMAlso reach unanimity, the stress birefrin coefficient B reduces, and the stress birefrin of waveguide is eliminated.
Summary of the invention
The purpose of this invention is to provide a kind of insensitive method of silicon based silicon dioxide stress optical waveguide polarization that realizes.Key is to adopt the technology in growth core district behind the first etching core district figure, when generating top covering and side direction covering, thermal oxide can stay the big silicon materials of thermal expansivity in the both sides in core district, but this side direction silicon materials balance silicon based silicon dioxide wave is at the stress of level and vertical direction, make the stress unanimity of waveguide at this both direction, do not need additional technique just can realize the polarization independence of silicon based silicon dioxide wave, can realize the polarization-insensitive of silicon based silicon dioxide AWG and silicon based silicon dioxide MZI type device.
The present invention realizes by following method:
A kind of method that adopts non-planar surface process to realize the silicon based silicon dioxide wave polarization irrelevant of the present invention is characterized in that, comprises the steps:
(1) carries out reactive ion etching earlier at silicon substrate, etch space, waveguide core district;
(2) high-temperature thermal oxidation forms about 15 μ m thick under-clad layer and side direction covering;
(3) use plasma reinforced chemical vapour deposition method or flame hydrolysis growth core district in space, waveguide core district;
(4) plasma reinforced chemical vapour deposition method or the flame hydrolysis 15 μ m top coverings of growing;
(5) polish away sandwich layer, the top covering material that is grown on the oxidation covering, whole silicon based silicon dioxide polarization-insensitive stress optical waveguide preparation finishes.
The optical waveguide spacing that wherein adopts this method to make should be not less than 30 μ m.
The optical waveguide that wherein adopts this method to make can be straight wave guide, curved waveguide or the combination of the two.
Wherein the space, waveguide core district in the step (1) is the trapezoidal shape that obtains with wet etching method.
Can realize the polarization-insensitive of silicon based silicon dioxide stress optical waveguide and related device by this method.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 adopts finite element method to carry out the stress analysis illustraton of model;
Fig. 2 is the horizontal and meridional stress distribution plan that has or not side direction Si material that adopts finite element method to obtain;
Fig. 3 realizes the insensitive section process flow diagram of silicon based silicon dioxide stress optical waveguide polarization with dry process;
Fig. 4 realizes the insensitive section process flow diagram of silicon based silicon dioxide stress optical waveguide polarization with wet processing.
Embodiment
See also Fig. 3, Fig. 3-1, Fig. 3 the-the 2nd, carries out reactive ion etching (RIE) earlier at silicon substrate 11, etches space, rectangular waveguide core district 12, and space width is 22.8 μ m, and etching depth is not less than 21 μ m, and core district spatial separation is not less than 30 μ m; Fig. 3-the 3rd, high-temperature thermal oxidation form about 15 μ m thick under-clad layer and side direction covering 13, with the leakage of restriction light; Fig. 3-the 4th uses plasma reinforced chemical vapour deposition method (PECVD) or flame hydrolysis (FHD) growth core district 14 in space, waveguide core district, the THICKNESS CONTROL of sandwich layer is 6 μ m, refractive index is 0.75% to determine that core material can be P according to the refringence of core district and covering
2O
5-GeO
2-SiO
2, GeO
2-SiO
2, SiON or P
2O
5-SiO
2Fig. 3-the 5th is 15 μ m top coverings 15 with FHD method or PECVD method growth thickness, and the top covering material can be P
2O
5-B
2O
3-SiO
2, SiO
2, SiON or B
2O
3-SiO
2Fig. 3-the 6th polishes away the sandwich layer, the top covering material that are grown on the oxidation covering.Whole silicon based silicon dioxide polarization-insensitive stress optical waveguide preparation finishes.Can realize the polarization-insensitive of silicon based silicon dioxide stress optical waveguide and related device by this method.
See also Fig. 4, Fig. 4-1, Fig. 4 the-the 2nd, carries out wet method Si corrosion at silicon substrate 11, erodes away space, the core of falling trapezoidal waveguide district 12, and space width is 22.8 μ m, and etching depth is not less than 21 μ m, and core district spatial separation is not less than 30 μ m; Fig. 4-the 3rd, high-temperature thermal oxidation form about 15 μ m thick under-clad layer and side direction covering 13, with the leakage of restriction light; Fig. 4-the 4th uses plasma reinforced chemical vapour deposition method (PECVD) or flame hydrolysis (FHD) growth core district 14 in space, waveguide core district, the THICKNESS CONTROL of sandwich layer is 6 μ m, refractive index is 0.75% to determine that core material can be P according to the refringence of core district and covering
2O
5-GeO
2-SiO
2, GeO
2-SiO
2, SiON or P
2O
5-SiO
2Fig. 4-the 5th is 15 μ m top coverings 15 with FHD method or PECVD method growth thickness, and the top covering material can be P
2O
5-B
2O
3-SiO
2, SiO
2, SiON or B
2O
3-SiO
2Fig. 4-the 6th polishes away the sandwich layer, the top covering material that are grown on the oxidation covering.Whole silicon based silicon dioxide polarization-insensitive stress optical waveguide preparation finishes.Can realize the polarization-insensitive of silicon based silicon dioxide stress optical waveguide and related device by this method.
What see also etching among Fig. 3-1, Fig. 3-2, Fig. 4-1, Fig. 4-2 again can be the combination of curved waveguide or straight wave guide and curved waveguide.At first be to carry out RIE etching or wet etching at silicon substrate, etch the space, waveguide core district of the combination of curved waveguide or straight wave guide and curved waveguide, space width is 22.8 μ m, and etching depth is not less than 21 μ m, and core district spatial separation is not less than 30 μ m; Then be that high-temperature thermal oxidation forms about 15 μ m thick under-clad layer and side direction covering, with the leakage of restriction light; Be with plasma reinforced chemical vapour deposition method (PECVD) or flame hydrolysis (FHD) growth core district then in space, waveguide core district, the THICKNESS CONTROL of sandwich layer is 6 μ m, refractive index is 0.75% to determine that core material can be P according to the refringence of core district and covering
2O
5-GeO
2-SiO
2, GeO
2-SiO
2, SiON or P
2O
5-SiO
2Be 15 μ m top coverings with FHD method or PECVD method growth thickness again, the top covering material can be P
2O
5-B
2O
3-SiO
2, SiO
2, SiON or B
2O
3-SiO
2Polish away the sandwich layer, the top covering material that are grown on the oxidation covering at last.Silicon based silicon dioxide polarization-insensitive wave guide process finishes.Can realize the polarization-insensitive of the combination of silicon based silicon dioxide curved waveguide or straight wave guide and curved waveguide by this method.
What other saw also etching among Fig. 3-1, Fig. 3-2, Fig. 4-1, Fig. 4-2 can be the AWG element layout.At first be to carry out RIE etching or wet etching at silicon substrate, etch the space, waveguide core district of AWG device, space width is 22.8 μ m, and etching depth is not less than 21 μ m, and core district spatial separation is not less than 30 μ m; Then be that high-temperature thermal oxidation forms about 15 μ m thick under-clad layer and side direction covering, with the leakage of restriction light; Be with plasma reinforced chemical vapour deposition method (PECVD) or flame hydrolysis (FHD) growth core district then in space, waveguide core district, the THICKNESS CONTROL of sandwich layer is 6 μ m, refractive index is 0.75% to determine that core material can be P according to the refringence of core district and covering
2O
5-GeO
2-SiO
2, GeO
2-SiO
2, SiON or P
2O
5-SiO
2Be 15 μ m top coverings with FHD method or PECVD method growth thickness again, the top covering material can be P
2O
5-B
2O
3-SiO
2, SiO
2, SiON or B
2O
3-SiO
2Polish away the sandwich layer, the top covering material that are grown on the side direction covering at last.Silicon based silicon dioxide polarization-insensitive AWG preparation finishes.Can realize the polarization-insensitive of silicon based silicon dioxide AWG by this method.
What see also etching among Fig. 3-1, Fig. 3-2, Fig. 4-1, Fig. 4-2 can be the MZI element layout.At first be to carry out RIE etching or wet etching at silicon substrate, etch the space, waveguide core district of MZI device, space width is 22.8 μ m, and etching depth is not less than 21 μ m, and core district spatial separation is not less than 30 μ m; Then be that high-temperature thermal oxidation forms about 15 μ m thick under-clad layer and side direction covering, with the leakage of restriction light; Be with plasma reinforced chemical vapour deposition method (PECVD) or flame hydrolysis (FHD) growth core district then in space, waveguide core district, the THICKNESS CONTROL of sandwich layer is 6 μ m, refractive index is 0.75% to determine that core material can be P according to the refringence of core district and covering
2O
5-GeO
2-SiO
2, GeO
2-SiO
2, SiON or P
2O
5-SiO
2Be 15 μ m top coverings with FHD method or PECVD method growth thickness again, the top covering material can be P
2O
5-B
2O
3-SiO
2, SiO
2, SiON or B
2O
3-SiO
2Polish away the sandwich layer, the top covering material that are grown on the oxidation covering at last.Silicon based silicon dioxide polarization-insensitive AWG preparation finishes.Can realize the polarization-insensitive of silicon based silicon dioxide MZI type device by this method.
Claims (4)
1, a kind of method that adopts non-planar surface process to realize the silicon based silicon dioxide wave polarization irrelevant is characterized in that, comprises the steps:
(1) carries out reactive ion etching earlier at silicon substrate, etch space, waveguide core district;
(2) high-temperature thermal oxidation forms about 15 μ m thick under-clad layer and side direction covering;
(3) use plasma reinforced chemical vapour deposition method or flame hydrolysis growth core district in space, waveguide core district;
(4) plasma reinforced chemical vapour deposition method or the flame hydrolysis 15 μ m top coverings of growing;
(5) polish away sandwich layer, the top covering material that is grown on the oxidation covering, whole silicon based silicon dioxide polarization-insensitive stress optical waveguide preparation finishes.
2, employing non-planar surface process according to claim 1 is realized the method for silicon based silicon dioxide wave polarization irrelevant, it is characterized in that, the optical waveguide spacing that wherein adopts this method to make should be not less than 30 μ m.
3, employing non-planar surface process according to claim 1 is realized the method for silicon based silicon dioxide wave polarization irrelevant, it is characterized in that, the optical waveguide that wherein adopts this method to make can be straight wave guide, curved waveguide or the combination of the two.
4, employing non-planar surface process according to claim 1 is realized the method for silicon based silicon dioxide wave polarization irrelevant, it is characterized in that, wherein the space, waveguide core district in the step (1) is the trapezoidal shape that obtains with wet etching method.
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| CN101833138A (en) * | 2010-04-30 | 2010-09-15 | 华中科技大学 | Method for manufacturing polarization-independent grating coupler |
| CN103869477A (en) * | 2014-01-26 | 2014-06-18 | 浙江工业大学 | Tunable light wave beam splitter based on fluid light guide |
| CN103882407A (en) * | 2012-12-20 | 2014-06-25 | 上海信电通通信建设服务有限公司 | Method for making silica film on surface of quartz substrate |
| CN105829954A (en) * | 2013-12-23 | 2016-08-03 | 3M创新有限公司 | Integrated optical component and method of making |
| CN109738989A (en) * | 2019-03-01 | 2019-05-10 | 苏州科沃微电子有限公司 | 2 × 2 integrated optical switch and manufacturing method led based on silicon planar lightwave |
| CN110658584A (en) * | 2019-10-08 | 2020-01-07 | 浙江大学 | Ultra-large bandwidth silicon-based waveguide MEMS optical switch |
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| CN113380711A (en) * | 2021-05-07 | 2021-09-10 | 三明学院 | Stress-controllable stress silicon and preparation method thereof |
Family Cites Families (4)
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| KR100277695B1 (en) * | 1998-09-12 | 2001-02-01 | 정선종 | Method for manufacturing a substrate for hybrid optical integrated circuit using S-O optical waveguide |
| GB2344933B (en) * | 1998-12-14 | 2001-08-29 | Bookham Technology Ltd | Process for making optical waveguides |
| CN1174469C (en) * | 2001-12-07 | 2004-11-03 | 中国科学院半导体研究所 | Method for preparing polarization-insensitive semiconductor optical amplifier |
| KR100456672B1 (en) * | 2002-03-30 | 2004-11-10 | 한국전자통신연구원 | Optical waveguide platform and manufacturing method thereof |
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| CN101833138A (en) * | 2010-04-30 | 2010-09-15 | 华中科技大学 | Method for manufacturing polarization-independent grating coupler |
| CN103882407A (en) * | 2012-12-20 | 2014-06-25 | 上海信电通通信建设服务有限公司 | Method for making silica film on surface of quartz substrate |
| CN105829954B (en) * | 2013-12-23 | 2018-11-09 | 3M创新有限公司 | Integrated optical component and its manufacturing method |
| CN105829954A (en) * | 2013-12-23 | 2016-08-03 | 3M创新有限公司 | Integrated optical component and method of making |
| US10018850B2 (en) | 2013-12-23 | 2018-07-10 | 3M Innovative Properties Company | Integrated optical component and method of making |
| US10379369B2 (en) | 2013-12-23 | 2019-08-13 | 3M Innovative Properties Company | Integrated optical component and method of making |
| US10488673B2 (en) | 2013-12-23 | 2019-11-26 | 3M Innovative Properties Company | Integrated optical component and method of making |
| CN103869477B (en) * | 2014-01-26 | 2016-09-07 | 浙江工业大学 | Tunable optical ripple beam splitter based on optical waveguide |
| CN103869477A (en) * | 2014-01-26 | 2014-06-18 | 浙江工业大学 | Tunable light wave beam splitter based on fluid light guide |
| CN109738989A (en) * | 2019-03-01 | 2019-05-10 | 苏州科沃微电子有限公司 | 2 × 2 integrated optical switch and manufacturing method led based on silicon planar lightwave |
| WO2020232792A1 (en) * | 2019-05-23 | 2020-11-26 | 上海交通大学 | Ultra-compact silicon waveguide mode conversion device employing metasurface structure |
| CN110658584A (en) * | 2019-10-08 | 2020-01-07 | 浙江大学 | Ultra-large bandwidth silicon-based waveguide MEMS optical switch |
| CN113380711A (en) * | 2021-05-07 | 2021-09-10 | 三明学院 | Stress-controllable stress silicon and preparation method thereof |
| CN113380711B (en) * | 2021-05-07 | 2023-07-28 | 三明学院 | Stress silicon with controllable stress and preparation method thereof |
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