CN1670254A - Method for deactivation of semiconductor laser cavity surface - Google Patents
Method for deactivation of semiconductor laser cavity surface Download PDFInfo
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- CN1670254A CN1670254A CN 200510067963 CN200510067963A CN1670254A CN 1670254 A CN1670254 A CN 1670254A CN 200510067963 CN200510067963 CN 200510067963 CN 200510067963 A CN200510067963 A CN 200510067963A CN 1670254 A CN1670254 A CN 1670254A
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Abstract
The invention belongs to the semiconductor laser field. It comprises the following steps: cleaving the semiconductor laser to ropes in the air, then loading a fixture and putting it into an electron-beam vapor vacuum chamber; ion precleaning, that is to remove the oxidant and impurity substance in the cleaved cavity surface and the non-radiative recombination center as formed surface state and interface state with low energy ion current, which is less than 100eV , in the air of the electron-beam vapor vacuum chamber; ion precleaning the front cavity surface(4) for 30 seconds to 6 minutes; depositing broad forbidden band low absorbing material such as ZnSe or ZnS on the front cavity surface(4) to be an inactivating blocking layer(3) in the way of electron-beam vapor deposition; plating reflection reducting coating(1) on the front cavity surface(4); ion precleaning the rear cavity surface(5) from the back of the fixture for 30 seconds to 6 minutes; depositing ZnSe or ZnS on the rear cavity surface(5) in the way of electron-beam vapor deposition; plating high negative coating(2) on the rear cavity surface(5). The invented inactivating film is of stable performance, improved reliability, simple preparation, which can be used in lasers with different wave lengths or structures.
Description
One. technical field
The present invention relates to a kind of method of deactivation of semiconductor laser cavity surface, be suitable for the semi-conductor ridge waveguide laser apparatus of multiple different wave length, wide laser apparatus.
Two. background technology
Semiconductor laser is the core devices in fields such as optical communication, optical pumping, optical storage.Its chamber face is because interfacial state, impurity contamination or strained influence, make photoabsorption strengthen, temperature is acute to be risen, strengthened the absorption of light conversely again, be easy to take place oxidation, produce defective, make that laser performance takes place to fail and the catastrophic optical damage damage occurs, this seems particularly outstanding to high power laser.For reducing the influence of these factors, improve laser device reliability, can carry out plated film to laser cavity surface usually.Usually, this plated film had both been protected the chamber face, had played the effect of regulating threshold current and slope efficiency simultaneously again.Previous directly play passivation and provide protection to the chamber face with speculum, speculum is used various oxide dielectric films more.But oxide compound as speculum or passivation protection layer the Sauerstoffatom in long term operation rear oxidation thing can with the laser material mutual diffusion, make device property degenerate.In order to address this problem, Chang Yong way is to plate skim Si earlier as passivation barrier before the plating speculum in the world.And, in ultrahigh vacuum(HHV), implement cleavage usually, and plate passivation layer and speculum immediately for to make the oxidation of chamber face reduce to minimum degree.Though the reliability of the reasonable raising device of this method energy, to the requirement harshness of equipment, complex process, cost is too high.
Three. summary of the invention
Purpose of the present invention is exactly the processing method that proposes a kind of simple deactivation of semiconductor laser cavity surface, has both made laser device reliability obtain big raising, the difficulty that reduces cost again and operate simultaneously.
The method of a kind of deactivation of semiconductor laser cavity surface provided by the invention is characterized in that, may further comprise the steps:
1) after the cleavage slivering, the plated film unit clamp of packing into is put into the electron beam evaporation vacuum chamber to semiconductor laser then in air;
2) ion pre-washing, promptly in the vacuum chamber of electron beam evaporation with energy less than the oxide compound on the harmless chamber face of removing cleavage in air of the low energy large beam ion of 100eV and surface state and these non-radiative recombination centers of interfacial state of impurity and formation thereof; Carried out described ion pre-washing 30 seconds to 6 minutes at semiconductor laser front facet 4;
3) the deposited by electron beam evaporation mode as passivation barrier 3, prevents the diffusion of the materials such as oxygen of chamber face mirror medium to the chamber face at the low absorbing material of front facet 4 evaporation ZnSe or ZnS broad stopband;
4) plate anti-reflection films 1 according to prior art at front facet 4;
5) behind the anchor clamps turn-over rear facet 5 is carried out art breading, carries out above-mentioned steps 2 at semiconductor laser rear facet 5) described ion pre-washing 30 seconds to 6 minutes;
6) electron-beam evaporation mode hangs down absorbing material as passivation barrier 3 at rear facet 5 evaporation ZnSe or ZnS broad stopband;
7) plate high-reflecting films 2 according to prior art at rear facet 5.
(2.7eV and 3.7eV) is more much bigger than GaAs, non-crystalline silicon etc. for the band gap of ZnSe and ZnS material, can reduce to absorb and compound on the surface of restriction electronics and hole.ZnSe crystal and polycrystalline lattice parameter and GaAs are approaching, and mismatch ratio is 0.23%; Particularly the thermal expansivity of ZnSe and ZnS is respectively that (7 * 10-6K-1 and 6.5 * 10-6K-1), (6 * 10-6K-1) much at one with GaAs.Difference than the Si and the GaAs coefficient of expansion is little more than 3 times.The coupling of rerum natura can reduce film that the difference of the stress between film and the substrate and the coefficient of expansion may cause and peel off and break under high heat effect.
The processing method of foregoing invention has the following advantages:
1. cleavage in air greatly reduces the difficulty and the production cost of operation.
2. used passivation barrier material ZnSe (or ZnS) is very close with the GaAs characteristic, and is again wide bandgap material, makes that the passive film performance is more stable, and passivation effect is better.
3. this processing method, than after the cleavage in air directly the technology of plated film better improved the reliability of semiconductor laser.
4. this processing method is simple, is convenient to be applied to actual production.
5. this method is applicable to the laser apparatus of multiple different wave length or structure.
Four. description of drawings
Institute's accompanying drawing is a laser cavity surface Processing Structure synoptic diagram
(1) anti-reflection film among the figure, (2) high-reflecting film, (3) passivation barrier, (4) front facet, (5) rear facet.
Five. embodiment
(1) after the cleavage slivering, the plated film unit clamp of packing into is put into the electron beam evaporation vacuum chamber to semiconductor laser then in air;
(2) ion pre-washing: select Ar or the little ion source of other damage all can; Carried out ion pre-washing 30 seconds or 3 minutes or 6 minutes at semiconductor laser front facet 4;
(3) low absorbing material prevents the diffusion to the chamber face of the oxygen of chamber face mirror medium and impurity as passivation barrier 3 to the deposited by electron beam evaporation mode in front facet 4 evaporation ZnSe or ZnS broad stopband;
(4) plate anti-reflection films 1 according to prior art at front facet 4;
(5) behind the anchor clamps turn-over rear facet 5 is carried out art breading, carry out above-mentioned steps (2) at semiconductor laser rear facet 5;
(6) electron-beam evaporation mode is at rear facet 5 evaporation ZnSe or ZnS;
(7) plate high-reflecting films 2 according to prior art at rear facet 5.
Treat after finishing that temperature reduces and to take out.Taking out back sintering encapsulation gets final product.
Under same senile experiment condition, according to present weathering test data as can be known, do not pass through the semiconductor laser that ion pre-washing and evaporation ZnSe handle, compare with the laser apparatus that the above technology is made, its deterioration velocity be the latter 3-5 doubly, the wide semiconductor laser deterioration velocity of different wave length and bar can be slightly different; Show that by this deterioration velocity analysis its life-span is improved through the semiconductor laser of ion pre-washing and ZnSe passivation technology, this technology of strong explanation has improved the reliability of semiconductor laser effectively.
Claims (1)
1, a kind of method of deactivation of semiconductor laser cavity surface is characterized in that, may further comprise the steps:
1) after the cleavage slivering, the plated film unit clamp of packing into is put into the electron beam evaporation vacuum chamber to semiconductor laser then in air;
2) ion pre-washing, promptly in the vacuum chamber of electron beam evaporation with energy less than the oxide compound on the harmless chamber face of removing cleavage in air of the low energy large beam ion of 100eV and surface state and these non-radiative recombination centers of interfacial state of impurity and formation thereof; Carried out described ion pre-washing 30 seconds to 6 minutes at semiconductor laser front facet (4);
3) the deposited by electron beam evaporation mode as passivation barrier (3), prevents the diffusion of the materials such as oxygen of chamber face mirror medium to the chamber face at the low absorbing material of front facet (4) evaporation ZnSe or ZnS broad stopband;
4) plate anti-reflection film (1) according to prior art at front facet (4);
5) noise spectra of semiconductor lasers rear facet (5) carries out above-mentioned steps 2 behind the anchor clamps turn-over) described ion pre-washing 30 seconds to 6 minutes;
6) electron-beam evaporation mode hangs down absorbing material as passivation barrier (3) at rear facet (5) evaporation ZnSe or ZnS broad stopband;
7) plate high-reflecting film (2) according to prior art at rear facet (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100679634A CN100388573C (en) | 2005-04-30 | 2005-04-30 | Method for deactivation of semiconductor laser cavity surface |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100679634A CN100388573C (en) | 2005-04-30 | 2005-04-30 | Method for deactivation of semiconductor laser cavity surface |
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| Publication Number | Publication Date |
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| CN1670254A true CN1670254A (en) | 2005-09-21 |
| CN100388573C CN100388573C (en) | 2008-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005100679634A Expired - Fee Related CN100388573C (en) | 2005-04-30 | 2005-04-30 | Method for deactivation of semiconductor laser cavity surface |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022894A (en) * | 2012-11-22 | 2013-04-03 | 长春理工大学 | Semiconductor laser cavity surface passivation film structure and preparation method thereof |
| CN103178440A (en) * | 2013-01-18 | 2013-06-26 | 西安卓铭光电科技有限公司 | Method and device for passivating cavity surface of semiconductor laser |
| CN104377543A (en) * | 2014-11-14 | 2015-02-25 | 西安立芯光电科技有限公司 | Method for manufacturing semiconductor laser endoscope |
| CN109234673A (en) * | 2018-11-06 | 2019-01-18 | 长春理工大学 | A kind of high damage threshold anti-reflection film method prepared containing passivation layer |
| CN112366516A (en) * | 2020-09-28 | 2021-02-12 | 武汉光安伦光电技术有限公司 | Chip cavity processing method and semiconductor laser |
| CN112736641A (en) * | 2021-01-12 | 2021-04-30 | 度亘激光技术（苏州）有限公司 | Passivation method of semiconductor device |
| CN117096724A (en) * | 2023-10-20 | 2023-11-21 | 度亘核芯光电技术(苏州)有限公司 | Cavity surface cleaning and passivating method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5668049A (en) * | 1996-07-31 | 1997-09-16 | Lucent Technologies Inc. | Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur |
| US6744796B1 (en) * | 2000-03-30 | 2004-06-01 | Triquint Technology Holding Co. | Passivated optical device and method of forming the same |
| US6812152B2 (en) * | 2001-08-09 | 2004-11-02 | Comlase Ab | Method to obtain contamination free laser mirrors and passivation of these |
| CN1534839A (en) * | 2003-03-31 | 2004-10-06 | 中国科学院半导体研究所 | Method of semiconductor laser cavity surface passivation |
-
2005
- 2005-04-30 CN CNB2005100679634A patent/CN100388573C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022894A (en) * | 2012-11-22 | 2013-04-03 | 长春理工大学 | Semiconductor laser cavity surface passivation film structure and preparation method thereof |
| CN103178440A (en) * | 2013-01-18 | 2013-06-26 | 西安卓铭光电科技有限公司 | Method and device for passivating cavity surface of semiconductor laser |
| CN104377543A (en) * | 2014-11-14 | 2015-02-25 | 西安立芯光电科技有限公司 | Method for manufacturing semiconductor laser endoscope |
| CN104377543B (en) * | 2014-11-14 | 2017-09-26 | 西安立芯光电科技有限公司 | A kind of semiconductor laser cavity mirror preparation method |
| CN109234673A (en) * | 2018-11-06 | 2019-01-18 | 长春理工大学 | A kind of high damage threshold anti-reflection film method prepared containing passivation layer |
| CN112366516A (en) * | 2020-09-28 | 2021-02-12 | 武汉光安伦光电技术有限公司 | Chip cavity processing method and semiconductor laser |
| CN112366516B (en) * | 2020-09-28 | 2023-03-14 | 武汉光安伦光电技术有限公司 | Chip cavity processing method and semiconductor laser |
| CN112736641A (en) * | 2021-01-12 | 2021-04-30 | 度亘激光技术（苏州）有限公司 | Passivation method of semiconductor device |
| CN112736641B (en) * | 2021-01-12 | 2022-03-29 | 度亘激光技术（苏州）有限公司 | Passivation method of semiconductor device |
| CN117096724A (en) * | 2023-10-20 | 2023-11-21 | 度亘核芯光电技术(苏州)有限公司 | Cavity surface cleaning and passivating method |
| CN117096724B (en) * | 2023-10-20 | 2024-02-06 | 度亘核芯光电技术(苏州)有限公司 | Cavity surface cleaning and passivating method |
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| Publication number | Publication date |
|---|---|
| CN100388573C (en) | 2008-05-14 |
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