CN1664633A - Nanocrystalline quantum dot optical fiber and optical fiber amplifier - Google Patents

Nanocrystalline quantum dot optical fiber and optical fiber amplifier Download PDF

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CN1664633A
CN1664633A CN 200510049180 CN200510049180A CN1664633A CN 1664633 A CN1664633 A CN 1664633A CN 200510049180 CN200510049180 CN 200510049180 CN 200510049180 A CN200510049180 A CN 200510049180A CN 1664633 A CN1664633 A CN 1664633A
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quantum dot
semiconductor nanocrystal
optical fiber
described semiconductor
radiation
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CN1317574C (en
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程成
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Zhejiang University of Technology ZJUT
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Zhejiang University of Technology ZJUT
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Abstract

This invention provides one nanometer transistor quanta fiber and its amplifier, which adopts human nanometer transistor PbSe and CdSe as fiber mixture to form quanta fiber. The quanta fiber and pump source, input fiber coupler and output fiber coupler form quanta fiber amplifier.

Description

Nanocrystalline quantum dot optical fiber and fiber amplifier
(1) technical field
The invention belongs to the photoelectron technology field, be a kind of optical communication device, especially a kind of optical fiber and fiber amplifier.
(2) background technology
Traditional fiber amplifier is a fiber amplifier of mixing natural rare earth element (for example erbium, thulium, ytterbium etc.).Because it has characteristics such as wide bandwidth, high-gain, low noise, has been a Primary Component in the communication of dense wave division multipurpose all optical network.At present, studying and use maximum is Erbium-Doped Fiber Amplifier (EDFA) (EDFAs).For the flat gain and the bandwidth that increase fiber amplifier, people have used many diverse ways, for example traditional wavestrip (C-band) and the two fibre core Er-doped fibers of long wave band (L-band) are connected in series, and can obtain the amplifier of super bandwidth, flat gain.The flat gain of this novel amplifier in the 1515-1620nm interval is 15dB, and the change in gain between C wavestrip (1515-1555nm) is 1.3dB, is 1.5dB between L wavestrip (1562-1620nm), and noise spectrum is 4.5-4.8dB on whole wavestrip.These flat gains and band merit have been represented the best level of present EDFAs, the limit of also having represented EDFAs to reach substantially substantially.
Though natural element mixes and serial connection technology etc. is greatly improved the fiber amplifier performance, but, because radiation (absorption) spectrum wavelength and the spectrum width of natural element are constant, therefore, important indicators such as its flat gain, broadband, noise all are restricted, and can't further improve.In recent years, there are many new development in artificial nano crystalline material (quantum dot) field.Quantum dot is accurate zero-dimension nano material, and it is made of a spot of atom.The size of three dimensions of quantum dot all below tens nanometers, all limited to by the motion of its internal electron on all directions, so quantum effect is obvious especially.The low density of states, the sharpening and the three-dimensional restrained motion of energy level in the quantum dot, the discontinuous electronic energy stage structure that causes similar atom, its electric property and optical property and macroface ratio are had significant change, also make semiconductor-quantum-point have very wide application prospect aspect many at life science, medicine, functional material, catalysis, magnetic medium, optoelectronic device etc.
In the artificial nano crystalline material, for communication optical fiber, even having possessed of having good be desirable absorption and radiation spectrum.Wherein the radiation and the absorption spectra of quantum dots such as PbSe, CdSe, CdTe and CdS have almost covered from the wavestrip of the broadness of 465-2340nm.In addition, when preparation artificial nano crystalline material, the width of quantum well be can regulate and control, thereby the wavelength location at regulation and control absorption peak and radiation peak and the overall with half high (FWHM) of spectrum reached by the yardstick of artificial regulatory nanocrystal.By dissimilar doping or different scale size, also can wholely move absorption and radiation spectrum.
(3) summary of the invention
In order to break through the restriction of key indexs such as traditional Er-doped fiber and gain of EDFA, broadband and noise, the invention provides a kind of nanocrystalline quantum dot optical fiber that can obviously improve the fiber amplifier performance, and high flat gain, wide bandwidth, quantum dot light fiber amplifier that noise is extremely low.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of nanocrystalline quantum dot optical fiber comprises fibre core, covering, and described optical fiber adopts semiconductor nanocrystal as alloy, and the concentration of described semiconductor nanocrystal is: (0.6～5.0) * 10 24m -3This semiconductor nanocrystal diameter is 1.9～9nm, in the radiation of visible and infrared band and the wavestrip of absorption covering 465～2340nm.
Described nanocrystalline quantum dot optical fiber, described semiconductor nanocrystal are one of following: (1), PbSe quantum dot; (2), CdSe quantum dot; (3), CdTe quantum dot; (4), CdS quantum dot.Wherein preferred semiconductor nanocrystal is the PbSe quantum dot, and the concentration of described semiconductor nanocrystal is: (0.6～3.0) * 10 24m -3Described semiconductor nanocrystal diameter is 4.5～9nm.When the semiconductor nanocrystal of selecting was the CdSe quantum dot, the concentration of described semiconductor nanocrystal was: (0.6～3.0) * 10 24m -3Described semiconductor nanocrystal diameter is 1.9～6.7nm.
A kind of nanocrystalline quantum dot optical fiber amplifier, comprise pump light source, input optical fibre coupling mechanism, quanta point optical fiber, output optical fibre coupling mechanism, described quanta point optical fiber adopts semiconductor nanocrystal as alloy, and the concentration of described semiconductor nanocrystal is: (0.6～5.0) * 10 24m -3This semiconductor nanocrystal diameter is 1.9～9nm, in the radiation of visible and infrared band and the wavestrip of absorption covering 465～2340nm, fiber lengths is 10～60 meters, the fiber core radius is 2～6 μ m, the refringence of fibre core and covering is 0.005～0.01, pumping wavelength is 400～2300nm, and pump power is 10～200mW.
Further, available semiconductor nanocrystal is one of following: (1), PbSe quantum dot; (2), CdTe quantum dot; (3), CdSe quantum dot; (4), CdS quantum dot.
Further, preferred PbSe quantum dot nano crystal quanta point optical fiber, the PbSe quantum dot concentration of described semiconductor nanocrystal is: (0.6～3.0) * 10 24m -3Described semiconductor nanocrystal diameter is 4.5～9nm; Fiber lengths is 13.3～23.5 meters, and the fiber core radius is 3.1～5.1 μ m, and the refraction difference of fibre core and covering is 0.0053～0.0073, and pumping wavelength is 1433.7～1483.7nm, and pump power is 25～75mW.
In the artificial nano crystalline material, for communication optical fiber, even having possessed of having good be desirable absorption and radiation spectrum.Wherein, the absorption and the radiation spectrum of quantum dots such as PbSe, CdSe, CdTe and CdS have almost covered from the wavestrip of the broadness of 465-2340nm.In addition, when preparation artificial nano crystalline material, the width of quantum well be can regulate and control, thereby the wavelength location at regulation and control absorption peak and radiation peak and the overall with half high (FWHM) of spectrum reached by the yardstick of artificial regulatory nanocrystal.By dissimilar doping or different scale size, also can wholely move absorption and radiation spectrum.Adopt the quanta point optical fiber of doped semiconductor nanocrystal, and the quantum dot light fiber amplifier that constitutes by this quanta point optical fiber.One of below described semiconductor nanocrystal is preferred: (1) PbSe quantum dot; (2) CdSe quantum dot.
Described PbSe quantum dot nano crystal has one of following feature:
(1) the about 4.5nm of diameter, the radiation peak position is in 1200 ± 100nm, and first absorption peak is positioned at 1100 ± 100nm, and radiation (absorption) spectrum overall with half height is 100～200nm;
(2) the about 5nm of diameter, the radiation peak position is in 1400 ± 100nm, and first absorption peak is positioned at 1310 ± 100nm, and radiation (absorption) spectrum overall with half height is 100～200nm;
(3) the about 5.5nm of diameter, the radiation peak position is in 1630 ± 100nm, and first absorption peak is positioned at 1550 ± 100nm, and radiation (absorption) spectrum overall with half height is 100～200nm;
(4) the about 7nm of diameter, the radiation peak position is in 1810 ± 100nm, and first absorption peak is positioned at 1750 ± 100nm, and radiation (absorption) spectrum overall with half height is 100～200nm;
(5) the about 8nm of diameter, the radiation peak position is in 1950 ± 100nm, and first absorption peak is positioned at 1900 ± 100nm, and radiation (absorption) spectrum overall with half height is 100～200nm;
(6) the about 9nm of diameter, the radiation peak position is in 2340 ± 100nm, and first absorption peak is positioned at 2300 ± 100nm, and radiation (absorption) spectrum overall with half height is 100～200nm.
Described CdSe quantum dot nano crystal has one of following feature:
(1) the about 1.9nm of diameter, the radiation peak position is in 465 ± 10mm, and first absorption peak is positioned at 445 ± 10nm, molecular weight 0.015mg/nmol;
(2) the about 2.1nm of diameter, the radiation peak position is in 500 ± 10nm, and first absorption peak is positioned at 480 ± 10nm, molecular weight 0.021mg/nmol;
(3) the about 2.4nm of diameter, the radiation peak position is in 520 ± 10nm, and first absorption peak is positioned at 510 ± 10nm, molecular weight 0.029mg/nmol;
(4) the about 2.7nm of diameter, the radiation peak position is in 545 ± 10nm, and first absorption peak is positioned at 530 ± 10nm, molecular weight 0.042mg/nmol;
(5) the about 3.2nm of diameter, the radiation peak position is in 570 ± 10nm, and first absorption peak is positioned at 560 ± 10nm, molecular weight 0.070mg/nmol;
(6) the about 4.0nm of diameter, the radiation peak position is in 595 ± 10nm, and first absorption peak is positioned at 585 ± 10nm, molecular weight 0.13mg/nmol;
(7) the about 5.2nm of diameter, the radiation peak position is in 618 ± 10nm, and first absorption peak is positioned at 610 ± 10nm, molecular weight 0.29mg/nmol;
(8) the about 6.7nm of diameter, the radiation peak position is in 640 ± 10nm, and first absorption peak is positioned at 634 ± 10nm, molecular weight 0.67mg/nmol;
Described semiconductor nanocrystal quanta point optical fiber, the concentration of mixing PbSe or CdSe quantum dot is (0.6～3.0) * 10 24m -3Described nanocrystalline quantum dot optical fiber amplifier comprises: pump light source, input optical fibre coupling mechanism, quanta point optical fiber, output optical fibre coupling mechanism, wherein fiber lengths is 10～60 meters, the fiber core radius is 2～6 μ m, the refringence of fibre core and covering is 0.005～0.01, pumping wavelength is 400～2300nm, and pump power is 10～200mW.
Beneficial effect of the present invention mainly shows: do not adopt traditional natural element (for example: erbium) as the alloy of optical fiber, and adopt artificial nano crystal PbSe and CdSe quantum dot as the alloy of optical fiber, constitute quanta point optical fiber thus.Can form the quantum dot light fiber amplifier by this quanta point optical fiber.Compare with traditional Erbium-Doped Fiber Amplifier (EDFA), this quantum dot light fiber amplifier has outstanding advantages such as high flat gain, wide bandwidth, noise are extremely low.
(4) embodiment
Embodiment 1
A kind of semiconductor nanocrystal quantum dot light fiber amplifier.Adopting wherein a kind of PbSe quantum dot is the optical fiber alloy, and its diameter is 5.5nm, and the radiation peak position is in 1630nm, and first absorption peak is positioned at 1550nm, and radiation (absorption) spectrum overall with half height is 150, and doping content is 1.0 * 10 24m -3Described nanocrystalline quantum dot optical fiber amplifier comprises: pump light source, input optical fibre coupling mechanism, quanta point optical fiber, output optical fibre coupling mechanism, wherein fiber lengths is 18.3 meters, the fiber core radius is 4.1 μ m, the refringence of fibre core and covering is 0.0063, pumping wavelength is 1458.7nm, and pump power is 50mW.
People have measured the absorption of described semiconductor nanocrystal PbSe quantum dot and the relative value of radiation spectrum.For the absolute value of absorption cross section, can calculate by the Beer-Lambert law: the receptivity that the PbSe quantum dot is positioned at the first absorption peak place is A=ε C=1600 Δ ED 3CL, wherein C (mol/L) is a volumetric molar concentration, and L (m) is the radiation path length of record absorption spectra, and ε (L/mol.m) is the extinction coefficient of every mole of quantum dot, and Δ E (ev) is the radiation photon energy, D (nm) is the diameter of quantum dot.Correspondingly, the peak value of absorption cross section is σ a = A / L n q , N wherein q(m -3) be PbSe quantum dot population density, it can be obtained by the Mass Calculation of concentration and each quantum dot.Because the diameter of PbSe particle (～5.5nm) compare Er 3+Ion is a lot of greatly, and dense, generally can reach 2.5mg/mL, therefore, and the erbium ion Er that PbSe quantum dot absorption cross section peakedness ratio is common 3+The cross section exceed about 2～3 magnitudes.
In the communication wavestrip between 1400-1800nm, the absorption of described PbSe quantum dot and radiation spectrum have unimodal characteristics.Can adopt two energy level models to describe QDFA.For rotational symmetry optical fiber, the frequency of propagating in fibre core is v kSignal and pumping light power equation be:
dP k ( z ) dz = u k σ ek ∫ 0 a i k ( r ) n 2 ( r , z ) [ P k ( z ) + mhv k Δv k ] 2 πrdr - u k σ ak ∫ 0 a i k ( r ) n 1 ( r , z ) P k ( z ) 2 πrdr - u k l k P k ( z ) - - - ( 1 )
σ wherein Ek(σ Ak) be radiation (absorption) cross section, i kBe normalization transverse mode intensity, n 1,2Be following energy level population density, the l of going up of quantum dot kBe fiber loss (comprise scattering loss, leak out loss of fibre core or the like), Δ v kBe effective noise bandwidth, mhv Δ v kIt is the contribution of spontaneous radiation.Light can be along forward direction (u k=+1) or the back to (u k=-1) propagates, for the noise power of spontaneous radiation, m=2; For signal and pump power, m=0.Notice that following formula is to frequency v k, generally need wavestrip of research, thereby, need serial discrete frequencies is studied.First of following formula is the increase to luminous power of radiation and noise, and second is the absorption of luminous power, and the 3rd is fiber loss.
The population density equation of last energy level is
dn 2 dt = Σ k P k i k σ ak hv k n 1 - Σ k P k i k σ ek hv k n 2 - n 2 τ , - - - ( 2 )
Wherein τ is a upper level lifetime, and all frequencies are sued for peace.Under steady state approximation,
n 2 ( r , z ) = E q τ Σ k σ ak hv k P k ( z ) i k ( r ) 1 + τ Σ k σ ak + σ ek hv k P k ( z ) i k ( r ) , - - - ( 3 )
Gross density n wherein q=n 1+ n 2, it can be determined by the concentration of quantum dot and the data such as quality of every quantum dot.
For the ease of comparing, can be set as with the product of general Alcatel-Lucent identical with the refractive indices n and the fiber core radius a of covering fibre core with present general EDFAs.As single mode light distribution i kOne regularly, and above-mentioned equation is through simplifying merger, Amplifier Gain G sAnd bandwidth deltaf finally can be expressed as fiber lengths L f, pump wavelength pWith the function of such three parameters of upper level lifetime τ, promptly
G s = 10 log P out P in = F ( L f , λ p , τ ) , - - - ( 4 )
Or Δ=F ' (L f, λ p, τ), (4 ')
Wherein bandwidth can be common definition-three dB bandwidth.
A little less than to lead approximate and signal be that the condition of single mode should satisfy.Frequency v kSingle mode light distribution i kCan adopt zero Bessel function.Because signal gain and input signal power are inversely proportional to, be directly proportional with pump power, therefore, only needing with one group of signal power and pump power is that example gets final product.Here, establish input pumping power P p=50mW, the horizontal P of input signal power s=-30dBm.Signal is made up of a series of wavelength, can establish the shortest signal of wavelength and pumping wavelength interval D, and promptly signal wavelength is distributed as from λ p+ D is to 1750nm.Wavelength (comprising signal and pumping) adopts the mode of scanning, and scope can be 1nm at interval from 1450nm to 1750nm.
The data such as cross section that quantum dot is only arranged still can't be estimated the performance of QDFAs.This is because we can't predict fiber lengths L in advance f, amplifier pump wavelength pAnd life-span τ what could constitute a good QDFA on earth, and the characteristic of these parameter pair amplifiers is most important, therefore, need be to L f, λ p, τ is optimized.Can adopt the genetic algorithm of development in recent years than global optimization faster.Specific as follows: as at first, to produce three parameter L by random function f, λ p, the random value of τ, numerical solution equation (1)-(4), encoded back obtain gain bandwidth (GB), i.e. " objective function " value.Then, use inverse approach, that is:,,, oppositely obtain three parameters (gene) required when this target function value by global search by genetic algorithm from objective function.To chromosome by genomic constitution, carry out quality ordering according to the size of target function value, eliminate half chromosome of difference, stayed the chromosome of half.The chromosome that stays is carried out gene intersect, form the chromosome (daughter chromosome) of new half.Daughter chromosome and half the chromosome that before stays are formed the chromosome of a new generation, rank again.The sudden change that the chromogene occurrence probability is very little.Afterwards, enter circulation of future generation.After tens of generation circulations, till all chromosome all trends towards an optimum value.At this moment, three parameter L that obtained f, λ p, τ is optimum parameter, and promptly under these three parameters, this QDFA has maximum gain bandwidth (GB).In order to take into account gain and bandwidth, the objective function in the genetic algorithm may be defined as f Obj=G s+ γ Δ, wherein γ weight factor.Adjust γ, can obtain the combination of different gain bandwidth (GB)s as required.
QDFA provided by the invention has characteristics such as high flat gain, wide bandwidth and noise are extremely low.Has bandwidth 45nm when for example, gaining to 35.9dB; Or gain has bandwidth 18nm during for 40.5dB, and simultaneously, their noise spectrum is all near the quantum limit of 3dB.Gain and bandwidth can be adjusted as required.But when gain increased, bandwidth reduced; Or bandwidth is when increasing, and gain reduces.Noise spectrum then maintains on the level of 3.01dB all the time.
Compare with the technical indicator of the about 30dB gain of usually typical single-stage EDFAs, 25nm bandwidth and 4dB noise spectrum, the gain of QDFA has here improved～10dB, and bandwidth has increased～20nm, and noise spectrum has reduced～1dB.Gain, bandwidth and noise objective improve simultaneously, are the outstanding advantages of QDFA of the present invention.
For the source of quantum dots such as nanocrystal PbSe, existing both at home and abroad production.To the short run sample, how quantum dot mixes in the optical fiber, can adopt the vacuum pressure difference to draw or alternate manner, and the quantum dot nano crystal is sucked in the photonic crystal hollow-core fiber (Photonic Crystal HollowFiber).The photonic crystal hollow-core fiber has ready-made product, for example famous U.S. CorningInc. company etc.For large-scale production, can consider also directly nanocrystal to be created on the mode that is similar to er-doped, mixes ytterbium in the fibre core.
Embodiment 2
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: the doping content of the semiconductor nanocrystal of present embodiment is 5.0 * 10 24m -3, the PbSe lateral size of dots is about 4.5nm, and the radiation peak position is in 1200nm, and first absorption peak is positioned at 1100nm.
Embodiment 3
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: the doping content of the semiconductor nanocrystal of present embodiment is 3.0 * 10 24m -3, the PbSe lateral size of dots is about 4.5nm, and the radiation peak position is in 1200nm, and first absorption peak is positioned at 1100nm.
Embodiment 4
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: doping content is 2.0 * 10 24m -3, the semiconductor nanocrystal PbSe lateral size of dots of present embodiment is about 5nm, and the radiation peak position is in 1400nm, and first absorption peak is positioned at 1310nm.
Embodiment 5
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: doping content is 0.85 * 10 24m -3, the semiconductor nanocrystal PbSe lateral size of dots of present embodiment is about 7nm, and the radiation peak position is in 1810nm, and first absorption peak is positioned at 1750nm.
Embodiment 6
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: doping content is 0.7 * 10 24m -3, the semiconductor nanocrystal PbSe lateral size of dots of present embodiment is about 8nm, and the radiation peak position is in 1950nm, and first absorption peak is positioned at 1900nm.
Embodiment 7
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: doping content is 0.6 * 10 24m -3, the semiconductor nanocrystal PbSe lateral size of dots of present embodiment is about 9nm, and the radiation peak position is in 2340nm, and first absorption peak is positioned at 2300nm.
Embodiment 8
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: the semiconductor nanocrystal of present embodiment is the CdSe quantum dot, and doping content is 3.0 * 10 24m -3The about 1.9nm of diameter, the radiation peak position is in 465nm, and first absorption peak is positioned at 445nm, molecular weight 0.015mg/nmol.
Embodiment 9
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: the semiconductor nanocrystal of present embodiment is the CdSe quantum dot, and doping content is 5.0 * 10 24m -3The about 1.9nm of diameter, the radiation peak position is in 465nm, and first absorption peak is positioned at 445nm, molecular weight 0.015mg/nmol.
Embodiment 10
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: the semiconductor nanocrystal of present embodiment is the CdSe quantum dot, and doping content is 2.5 * 10 24m -3The about 2.1nm of diameter, the radiation peak position is in 500nm, and first absorption peak is positioned at 480nm, molecular weight 0.021mg/nmol.
Embodiment 11
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: the semiconductor nanocrystal of present embodiment is the CdSe quantum dot,, doping content is 2.0 * 10 24m -3The about 2.4nm of diameter, the radiation peak position is in 520nm, and first absorption peak is positioned at 510nm, molecular weight 0.029mg/nmol.
Embodiment 12
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: the semiconductor nanocrystal of present embodiment is the CdSe quantum dot, and doping content is 1.5 * 10 24m -3The about 2.7nm of diameter, the radiation peak position is in 545nm, and first absorption peak is positioned at 530nm, molecular weight 0.042mg/nmol.
Embodiment 13
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: the semiconductor nanocrystal of present embodiment is the CdSe quantum dot, and doping content is 1.0 * 10 24m -3The about 3.2nm of diameter, the radiation peak position is in 570nm, and first absorption peak is positioned at 560nm, molecular weight 0.070mg/nmol.
Embodiment 14
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: the semiconductor nanocrystal of present embodiment is the CdSe quantum dot, and doping content is 0.8 * 10 24m -3The about 4.0nm of diameter, the radiation peak position is in 595nm, and first absorption peak is positioned at 585nm, molecular weight 0.13mg/nmol.
Embodiment 15
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: the semiconductor nanocrystal of present embodiment is the CdSe quantum dot, and doping content is 0.7 * 10 24m -3The about 5.2nm of diameter, the radiation peak position is in 618nm, and first absorption peak is positioned at 610nm, molecular weight 0.29mg/nmol.
Embodiment 16
Basic structure, the principle of work of present embodiment are substantially the same manner as Example 1, and distinctive points is: the semiconductor nanocrystal of present embodiment is the CdSe quantum dot, and doping content is 0.6 * 10 24m -3The about 6.7nm of diameter, the radiation peak position is in 640nm, and first absorption peak is positioned at 634nm, molecular weight 0.67mg/nmol.

Claims (10)

1, a kind of nanocrystalline quantum dot optical fiber comprises fibre core, covering, it is characterized in that: described optical fiber adopts semiconductor nanocrystal as alloy, and the concentration of described semiconductor nanocrystal is: (0.6～5.0) * 10 24m -3
This semiconductor nanocrystal diameter is 1.9～9nm, in the radiation of visible and infrared band and the wavestrip of absorption covering 465～2340nm.
2, nanocrystalline quantum dot optical fiber as claimed in claim 1 is characterized in that: described semiconductor nanocrystal is one of following: (1), PbSe quantum dot; (2), CdSe quantum dot; (3), CdTe quantum dot; (4), CdS quantum dot.
3, nanocrystalline quantum dot optical fiber as claimed in claim 2 is characterized in that: described semiconductor nanocrystal is the PbSe quantum dot.
4, nanocrystalline quantum dot optical fiber as claimed in claim 3 is characterized in that: the concentration of described semiconductor nanocrystal is: (0.6～3.0) * 10 24m -3Described semiconductor nanocrystal diameter is 4.5～9nm.
5, nanocrystalline quantum dot optical fiber as claimed in claim 2 is characterized in that: described semiconductor nanocrystal is the CdSe quantum dot.
6, nanocrystalline quantum dot optical fiber as claimed in claim 5 is characterized in that: the concentration of described semiconductor nanocrystal is: (0.6～3.0) * 10 24m -3Described semiconductor nanocrystal diameter is 1.9～6.7nm.
7, a kind of nanocrystalline quantum dot optical fiber amplifier, comprise pump light source, input optical fibre coupling mechanism, quanta point optical fiber, output optical fibre coupling mechanism, it is characterized in that: described quanta point optical fiber adopts semiconductor nanocrystal as alloy, and the concentration of described semiconductor nanocrystal is: (0.6～5.0) * 10 24m -3
This semiconductor nanocrystal diameter is 1.9～9nm, in the radiation of visible and infrared band and the wavestrip of absorption covering 465～2340nm, fiber lengths is 10～60 meters, the fiber core radius is 2～6 μ m, the refringence of fibre core and covering is 0.005～0.01, pumping wavelength is 400～2300nm, and pump power is 10～200mW.
8, nanocrystalline quantum dot optical fiber amplifier as claimed in claim 7 is characterized in that: semiconductor nanocrystal is one of following: (1), PbSe quantum dot; (2), CdSe quantum dot; (3), CdTe quantum dot; (4), CdS quantum dot.
9, nanocrystalline quantum dot optical fiber amplifier as claimed in claim 8 is characterized in that: described semiconductor nanocrystal is the PbSe quantum dot.
10, nanocrystalline quantum dot optical fiber amplifier as claimed in claim 9, it is characterized in that: the concentration of described semiconductor nanocrystal is: (0.6～3.0) * 10 24m -3Described semiconductor nanocrystal diameter is 4.5～9nm; Fiber lengths is 13.3～23.5 meters, and the fiber core radius is 3.1～5.1 μ m, and the refraction difference of fibre core and covering is 0.0053～0.0073, and pumping wavelength is 1433.7～1483.7nm, pump power 25～75mW.
CNB2005100491803A 2005-03-04 2005-03-04 Nanocrystalline quantum dot optical fiber and optical fiber amplifier Expired - Fee Related CN1317574C (en)

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US8685781B2 (en) 2011-07-20 2014-04-01 Alliance For Sustainable Energy, Llc Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby
CN111120884A (en) * 2019-12-31 2020-05-08 浙江光塔节能科技有限公司 Quantum dot fluorescent optical fiber lamp

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