CN1662108A - Method for fabricating basal of driving components and dispaly of organic electro photoluminescence - Google Patents
Method for fabricating basal of driving components and dispaly of organic electro photoluminescence Download PDFInfo
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- CN1662108A CN1662108A CN 200410003172 CN200410003172A CN1662108A CN 1662108 A CN1662108 A CN 1662108A CN 200410003172 CN200410003172 CN 200410003172 CN 200410003172 A CN200410003172 A CN 200410003172A CN 1662108 A CN1662108 A CN 1662108A
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- Prior art keywords
- protective layer
- substrate
- active device
- device substrate
- active
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- 238000005424 photoluminescence Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title description 26
- 239000011241 protective layer Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims description 50
- 239000010409 thin film Substances 0.000 claims description 10
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 7
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- LCJRHAPPMIUHLH-UHFFFAOYSA-N 1-$l^{1}-azanylhexan-1-one Chemical group [CH]CCCCC([N])=O LCJRHAPPMIUHLH-UHFFFAOYSA-N 0.000 claims description 3
- 229920002292 Nylon 6 Polymers 0.000 claims description 3
- -1 acryl Chemical group 0.000 claims description 3
- 238000001125 extrusion Methods 0.000 claims description 3
- 229950001919 policapram Drugs 0.000 claims description 3
- 239000011850 water-based material Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims 1
- 239000004033 plastic Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 6
- 238000003860 storage Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Electroluminescent Light Sources (AREA)
Abstract
The base plate includes driving elements, pixel electrodes, and protective layer. The pixel electrodes are connected to driving elements. The protective layer covers pixel electrodes and driving elements fully. The protective layer is formed after step of preparing array segment on base plate is completed. Then cutting, shipping and storing operations are carried out. Before step of fabricating organic electro photoluminescence element, the protective layer is removed in order to prevent photoluminescence element from fine grain, scratches and defilement.
Description
Technical field
The invention relates to active device substrate, particularly relevant for the active device substrate with protective layer and the manufacture method of carrying the organic electro-luminescent display on it.
Background technology
General tradition is to belong to the large substrates processing procedure at Thin Film Transistor-LCD (TFT-LCD) panel, just directly sends into upright (cell) processing procedure of panel sets after array (array) section processing procedure is finished.Yet, with regard to organic electro-luminescent display is made flow process, after substrate is finished array (array) section processing procedure, must cut, send outside and put in storage storage usually, just carry out the organic electroluminescent element processing procedure of back segment.Yet, in cutting and send outside in the process, can cause particulate, scratch or problem such as stained and reduce yield.
Summary of the invention
In view of this; the object of the present invention is to provide a kind of active device substrate with protective layer; be after the substrate with thin-film transistor array is finished array (array) section processing procedure; on substrate, form a protective layer; just remove this protective layer after waiting to finish cutting, send outside and put in storage action such as storage; to avoid particulate, scratch or problem such as stained, so can promote the yield of organic electro-luminescent display.
According to above-mentioned purpose, the invention provides a kind of active device substrate with protective layer, aforesaid substrate comprises active member, pixel electrode and protective layer, and active member and pixel electrode electrically connect, and protective layer is arranged on active member and the pixel electrode.
Above-mentioned active member comprises thin-film transistor (TFT), thin film diode (TFD), PIN diode, MIM diode or field-effect transistor (FET).
In a preferred embodiment, protective layer is a water-based material, for example polyvinyl alcohol (PVA).In another embodiment, protective layer is an organic material, and for example acryl is the eurymeric photoresist.In another embodiment, wherein protective layer is the dry film of fitting in the roll extrusion mode, for example policapram (polyimide, PI), PETG (PET) or Merlon (PC).In addition, protective layer also can be inorganic material, for example silica or silicon nitride.
Description of drawings
Fig. 1 is the making flow chart that shows according to organic electro-luminescent display of the present invention; And
Fig. 2 shows that the present invention has the profile of the active device substrate of protective layer.
Symbol description:
10～substrate;
20～active member;
30～separator;
40～pixel electrode;
100～active device substrate;
200～protective layer;
The making step of 310-350～organic electro-luminescent display.
Embodiment
Below cooperate graphic and preferred embodiment, to illustrate in greater detail the present invention.
Below utilize Fig. 1 that the have active device substrate of protective layer and the making flow chart of organic electro-luminescent display of the present invention are described.
See also Fig. 1, at first please refer to step 310, go up the making active member in a substrate (for example being glass substrate), above-mentioned active member comprises thin-film transistor (TFT), thin film diode (TFD), PIN diode, MIM diode or field-effect transistor (FET).Then, please refer to step 320, form a protective layer on substrate with active member.Please refer to step 330a, before carrying out the organic electroluminescent element processing procedure of back segment, above-mentioned substrate cut with active member must be become be fit to the size of organic electroluminescent element processing procedure.Shown in step 340, remove this protective layer afterwards.According to another better embodiment of the present invention, after completing steps 320, can directly carry out step 330b, the active device substrate that will have protective layer is transported to client or warehouse-in storage.Shown in step 340, remove protective layer more afterwards.At last, please refer to step 350, form organic electroluminescent element on substrate with active member.
Fig. 2 is the profile that shows the active device substrate 100 with protective layer 200.This active device substrate 100 comprises substrate 10, for example a glass substrate.Substrate 10 be provided with active member 20.Above-mentioned active member 20 comprises thin-film transistor (TFT), thin film diode (TFD), PIN diode, MIM diode or field-effect transistor (FET).Between active member 20, has separator 30.Separator 30 is provided with a pixel electrode 40, and this pixel electrode 40 electrically connects with active member 20.
Before carrying out the organic electroluminescent element processing procedure of back segment, above-mentioned active device substrate must be cut into the size that is fit to the organic electroluminescent element processing procedure.Yet present employed cutting equipment major part is the knife flywheel type cutter head, easily has glass chip to be attached to active device substrate after the cutting, in follow-up manufacturing process for cleaning, easily produces problems such as scratch and particulate.Therefore, the present invention increases protective layer 200 and covers thereon comprehensively after substrate is finished array (array) section processing procedure.
In a preferred embodiment, protective layer 200 is made by water-based material, for example polyvinyl alcohol (PVA).Utilizing the mode of rotary coating (spin coating) that polyvinyl alcohol (PVA) solution is revolved is distributed on the tool active device substrate 100; soft roasting temperature after the film forming is about 80～120 ℃; promptly finish the making of protective layer 200 after soft roasting step, the removal method of protective layer 200 can be removed with water-washing method.
In another preferred embodiment, protective layer 200 also can be made by organic material, and for example acryl is the eurymeric photoresist.The mode of utilizing rotary coating (spin coating) is covered in the solution of eurymeric photoresist on the tool active device substrate 100, and soft roasting temperature is about 80～90 ℃ after the film forming, 2～3 minutes.Then, blanket exposure (more than ultraviolet light I-line (I-line) the exposure energy 250mJ) need not toasted (baking) after the exposure, promptly finishes the making of protective layer 200.Remove the organic base solution removal of protective layer 200 method usable concentration 0.1%～1.0%, for example the developer solution of concentration 0.4% tetramethyl ammonium hydroxide (TMAH).
In another preferred embodiment; protective layer 200 is the dry film materials of fitting in the roll extrusion mode; for example with policapram (polyimide, PI), PETG (PET) or Merlon dry films such as (PC) fit on the tool active device substrate 100.The removal method is soaked and can be removed with organic solution.
In addition, protective layer 200 also can be inorganic material, for example silica or silicon nitride.Its generation type can utilize physical vaporous deposition (PVD) or chemical vapour deposition technique (CVD) to be deposited on the tool active device substrate 100.The removal method removes with wet etching or dry ecthing method.
Before carrying out the organic electroluminescent element processing procedure of back segment; remove protective layer 200; to guarantee that the substrate 100 with active member is entering the clean level of back-end process; just carry out the organic electroluminescent element processing procedure, wherein organic electroluminescent element comprises: electric hole transport layer, organic electric-excitation luminescent layer, electron transfer layer and conductive layer.Because the protection of protective layer 200, problems such as particulate that is caused when being avoided cutting or sending outside and scratch significantly improve the yield of organic electro-luminescent display.
Claims (10)
1. active device substrate with protective layer comprises:
One has the substrate of active member; And
One protective layer, comprehensive being covered on this substrate with active member.
2. the active device substrate with protective layer according to claim 1, wherein this substrate with active member comprises:
One substrate, substrate be provided with an active member array;
One separator is arranged on this substrate and between this active member;
One pixel electrode is arranged on this separator, and wherein this pixel electrode and active member electrically connect.
3. the active device substrate with protective layer according to claim 2, wherein the material of this substrate is glass, silicon or plastics.
4. the active device substrate with protective layer according to claim 2, wherein this active member comprises thin-film transistor, thin film diode, PIN diode, MIM diode or field-effect transistor.
5. the active device substrate with protective layer according to claim 1, wherein the material of this protective layer is a water-based material.
6. the active device substrate with protective layer according to claim 5, wherein the material of this protective layer is a polyvinyl alcohol.
7. the active device substrate with protective layer according to claim 1, wherein the material of this protective layer is an organic material.
8. the active device substrate with protective layer according to claim 7, wherein this organic material is that acryl is the eurymeric photoresist.
9. the active device substrate with protective layer according to claim 1, wherein this protective layer is the dry film of fitting in the roll extrusion mode.
10. the active device substrate with protective layer according to claim 9, wherein the material of this dry film is policapram, PETG or Merlon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100031720A CN100539237C (en) | 2004-02-24 | 2004-02-24 | The manufacture method of organic electro-luminescent display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100031720A CN100539237C (en) | 2004-02-24 | 2004-02-24 | The manufacture method of organic electro-luminescent display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1662108A true CN1662108A (en) | 2005-08-31 |
| CN100539237C CN100539237C (en) | 2009-09-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100031720A Expired - Lifetime CN100539237C (en) | 2004-02-24 | 2004-02-24 | The manufacture method of organic electro-luminescent display |
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| CN (1) | CN100539237C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107425126A (en) * | 2017-04-27 | 2017-12-01 | 京东方科技集团股份有限公司 | Pixel defines structure, organic luminescent device and its method for packing, display device |
| CN108258045A (en) * | 2016-12-29 | 2018-07-06 | 无锡华润华晶微电子有限公司 | The preparation method of super-junction semiconductor device |
| JP2020102456A (en) * | 2020-02-18 | 2020-07-02 | 堺ディスプレイプロダクト株式会社 | Organic EL device and manufacturing method thereof |
| US11711955B2 (en) | 2018-04-26 | 2023-07-25 | Sakai Display Products Corporation | Organic electroluminescent device with organic flattening layer having surface Ra of 50 nm or less and method for producing same |
-
2004
- 2004-02-24 CN CNB2004100031720A patent/CN100539237C/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108258045A (en) * | 2016-12-29 | 2018-07-06 | 无锡华润华晶微电子有限公司 | The preparation method of super-junction semiconductor device |
| CN107425126A (en) * | 2017-04-27 | 2017-12-01 | 京东方科技集团股份有限公司 | Pixel defines structure, organic luminescent device and its method for packing, display device |
| US10263055B2 (en) | 2017-04-27 | 2019-04-16 | Boe Technology Group Co., Ltd. | Pixel definition structure, organic light-emitting device, encapsulation method thereof, and display apparatus |
| CN107425126B (en) * | 2017-04-27 | 2019-09-10 | 京东方科技集团股份有限公司 | Pixel defines structure, organic luminescent device and its packaging method, display device |
| US11711955B2 (en) | 2018-04-26 | 2023-07-25 | Sakai Display Products Corporation | Organic electroluminescent device with organic flattening layer having surface Ra of 50 nm or less and method for producing same |
| JP2020102456A (en) * | 2020-02-18 | 2020-07-02 | 堺ディスプレイプロダクト株式会社 | Organic EL device and manufacturing method thereof |
| JP7109492B2 (en) | 2020-02-18 | 2022-07-29 | 堺ディスプレイプロダクト株式会社 | Method for manufacturing organic EL device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100539237C (en) | 2009-09-09 |
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