CN1655321A - Process for preparing silicon-germanium material on insulator based on silicon-germanium / silicon structure separation-by-implantation-of-oxygen - Google Patents
Process for preparing silicon-germanium material on insulator based on silicon-germanium / silicon structure separation-by-implantation-of-oxygen Download PDFInfo
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- CN1655321A CN1655321A CN 200410093369 CN200410093369A CN1655321A CN 1655321 A CN1655321 A CN 1655321A CN 200410093369 CN200410093369 CN 200410093369 CN 200410093369 A CN200410093369 A CN 200410093369A CN 1655321 A CN1655321 A CN 1655321A
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Abstract
This invention discloses a method to process the silicon and germanium materials on the insulation based on silicon germanium structure oxygen isolation device, which orderly comprises silicon dioxide protective layer growth, ion injection and high temperature annealing and silicon dioxide layer removing. The invention is characterized by the following: growing silicon dioxide layer on the silicon and germanium before injection with thickness of 20~120nm; ion injection energy range is 15~80keV with dose range is 1.0x10<17>~6.0x10<17>m<-2>; annealing in range of 1200~1375Deg. C within time of one to twenty four hours; the annealing gas is argon or oxygen mixture with oxygen volume content is 0%~20%; removing silicon oxide protective layer.
Description
Technical field
The invention discloses a kind of method of annotating the silicon germanium material (SGOI:silicon germanium-on-insulator) on the oxygen isolation preparation insulator based on the SiGe/Si structure.Compared with prior art, adopt the silicon germanium material oxygen buried layer on the insulator of method provided by the invention preparation continuous, lattice quality is good, the Ge content height, and full release satisfied practical requirement, belongs to the manufacturing process of sophisticated semiconductor material.
Background technology
Along with the characteristic size of industrial silicon integrated circuit reaches 90 nanometer range, the silicon development of integration technology is near its physics limit, and it is arduous further further to reduce the difficulty that live width will face; Strained silicon technology becomes the another selection that reduces outside the live width owing to can increase substantially the performance of integrated circuit on the prior integrated circuit process basis.The maturation of the growth technology of the development of strained silicon technology and high quality silicon germanium alloy is undivided.Because the lattice constant of silicon is littler than germanium, on no strained silicon Germanium during epitaxially grown silicon, silicon crystal lattice can be by stretching to a certain degree, thus the formation strained silicon.Strained silicon technology utilize the stretching of lattice can obtain than the higher electronics of body silicon and hole mobility and with existing ic process compatibility, can realize the raising of device application and device performance.
The backing material of initial stage strained silicon technology is the SiGe/Si structure, but this structure is difficult to avoid leakage problem and latch-up under the process conditions of low live width, thereby makes its application be subjected to very big restriction.SGOI structure in conjunction with (SOI) technology of the silicon on the insulator and characteristics development is introduced a SiO in silicon germanium structure
2Insulating buried layer, thereby have the superiority of SOI technology and SiGe technology concurrently, can reduce the device short-channel effect, avoid floater effect, and has a characteristic of low parasitic capacitance, highly anti-radiation ability, high electron hole mobility and low inefficacy leakage current, can improve the MOS device performance, be very desirable to manufacturing high-performance, low energy-consumption electronic device platform.In addition, one or more layers device layer can be grown on the SGOI platform, as strained silicon, and strained Germanium, strain Si
1-yGe
y(x＜y or x＞y), InGaP or GaAs (x=1), these structures have a extensive future at microelectronics and optoelectronic areas.
The technology that is used to prepare the SGOI structure at present mainly contains smart peeling (SMART-CUT) technology, SOI extension (Epitaxy) SiGe and injection oxygen isolation technology (SIMOX) technology.
The SMART-CUT technology obtains the SGOI material by the method with SiGe/Si sheet and wafer bonding, general germanium-silicon layer of SGOI structure and silicon dioxide layer thickness that this method obtains are bigger, need further to handle, its technical process more complicated, and the reliability of bonding is a very big difficult problem.The SOI-Epitaxy technology is meant by injection oxygen isolation technology behind silicon chip notes oxygen formation SOI sheet, epitaxial growth SiGe on top layer silicon again, carry out high annealing at last, utilize the High temperature diffusion of germanium, make SOI sheet top layer silicon and germanium form the method that sige alloy obtains the SGOI structure, the method requires the top layer silicon of SOI extremely thin, need carry out reduction processing to the SOI sheet, and the technology that extension obtains SiGe on the SOI sheet also is not very ripe, crystal mass still needs further raising, and the method by High temperature diffusion obtains sige alloy and also requires further study aspect the component uniformity.
Annotate oxygen (SIMOX) technology of isolating and in the SOI material preparation, obtained successful application, and compatible mutually with the manufacturing process of present very lagre scale integrated circuit (VLSIC).The preparation of SGOI structure also can be adopted the SIMOX technology.By the SIMOX technology, the technical process that forms the SGOI structure is fairly simple, and oxygen is injected SiGe, obtains SiO on the SiGe/Si substrate
2Buried regions forms the SGOI structure.Compare with the SMART-CUT technology, adopt the SIMOX technology to prepare the SGOI structure and can carry out insulating buried layer thickness by the corresponding adjustment of dosage, energy, the adjustment of top layer silicon germanium material thickness has enlarged the range scale and the range of application of SGOI structure.Especially exhausting MOSFET device application field entirely, the SIMOX technology adopts low dosage can obtain the germanium-silicon layer and the insulating buried layer of thickness about 60 nanometers.The exploitation of ultra low-volume SIMOX technology also can further reduce the yardstick of SGOI structure.
But, also there are many difficult problems that will overcome in present conventional SIMOX technology in SGOI structure preparation field: directly the SIMOX technology often need high temperature more than 1300 ℃ long term annealing to improve the oxygen buried layer quality, but when the content of germanium in the germanium-silicon layer is higher than 10%, the fusing point of SiGe near in addition be lower than annealing temperature, the problem that germanium runs off in the annealing process is difficult to overcome, germanium-silicon layer with bury the oxygen quality and also can not get guaranteeing.Specifically can be with reference to Zhenghua An (Zhenghua An, Relaxed silicon germanium oninsulator substrates by oxygen implantation into pseudomorphicsilicon germanium silicon heterostructure, Applied Physics Letters82 (15), 2003, people's result of study such as pp.2452-2454), the silicon germanium material of 14% Ge content is after the SIMOX technology, though utilized double annealing technology, Ge content still has a large amount of losses, is reduced to and has only 8%; Behind the high annealing, because the consequence of selective oxidation, the gathering of germanium can appear in the interface, and causes the insulating buried layer formation of defective and dislocation at the interface, and lattice quality worsens.
In view of conventional injection oxygen isolation technology prepares the problem that the silicon-on-insulator germanium material exists, the present invention proposes to annotate based on the SiGe/Si structure method of oxygen isolation preparation silicon-on-insulator germanium material.
Summary of the invention
The purpose of this invention is to provide a kind of method based on SiGe/Si structure notes oxygen isolation preparation silicon-on-insulator germanium material, it is continuous that the silicon germanium material on the prepared insulator has oxygen buried layer, and lattice quality is good, Ge content height, the full advantage that discharges; In the SGOI zone, the density of silicon island and pin hole is very low in the buried oxide layer simultaneously.
The difference of annotating the injection oxygen isolation technology of the method for oxygen isolation preparation silicon-on-insulator germanium material and conventional SGOI material based on the SiGe/Si structure that adopts that the present invention proposes is; before ion injects; the silicon dioxide layer of protection of on the SiGe of top layer, growing in advance; to reduce the outdiffusion of germanium, keep the sige alloy component stable.Its mechanism is: in the high-temperature annealing process, the diffusion coefficient of germanium can increase gradually along with temperature raises, and conventional SIMOX technology prepares the SGOI materials process, and annealing can cause the outdiffusion of germanium, causes the loss of Ge content in the sige alloy; The present invention utilizes the little mechanism of germanium diffusion coefficient in the silicon dioxide layer, and the silicon dioxide layer of growing before annealing can limit the outdiffusion of germanium to a great extent, solves the difficult problem of germanium loss in the high-temperature annealing process; On the other hand, ion implantation process can have certain destruction to the top layer SiGe, and growth layer of silicon dioxide protective layer can well be protected the quality of top layer SiGe before injection.Concrete processing step is as follows:
(a) growthing silica protective layer;
(b) select the dosage of optimization and energy to carry out the ion injection;
(c) high annealing forms continuous insulating buried layer;
(d) remove silicon dioxide layer of protection.
Protective layer in the step (a) is SiO
2Film.The film thickness scope is 20nm～120nm, to play protection top layer SiGe, keeps the stable effect of germanium component, but can not be blocked up to influence the evenness of SiGe outer boundary, exceeds with 120nm.Silicon dioxide layer of protection is by the preparation of thermal oxidation or chemical vapor deposition (CVD), promptly can the blocks ions injection process more than the thickness 20nm to the destruction of lattice, and the outdiffusion of restriction germanium in high-temperature annealing process.
It is the key that forms silicon germanium material on the high-quality insulation that step (b) intermediate ion injects.Energy range when ion injects is 15～80keV, and corresponding dosage range is 1.0 * 10
17～6.0 * 10
17Cm
-2The pairing dosage of 25keV is 1.5 * 10
17Cm
-2, the pairing dosage of 60keV is 3.0 * 10
17Cm
-2Energy and dosage ground are optimized close like linear.The ion that injects removes O
+Can also be outward O
2 +, HO
+, H
2O
+Etc. oxygen containing ion to form buried oxide layer.If inject the ion of nitrogen oxygen, can form the mixing buried regions of silicon oxynitride.The process of injecting comprises once to be injected and repeatedly injects.Underlayer temperature is 400～700 ℃ during injection.Angle during injection between ion beam and the silicon germanium material normal is 7 °
Step (c) high annealing is that injection oxygen isolation technology prepares the important step that the silicon-on-insulator germanium material forms insulating buried layer.The temperature of annealing is 1200～1375 ℃, and annealing time is 1～24 hour. Annealing atmosphere is the mist of argon gas or nitrogen and oxygen, and wherein the volume content of oxygen can be 0%～20%.
Silicon germanium material on the insulator of the present invention is a broad sense, comprises silicon, germanium, sige alloy, GaAs or other IV-IV, the binary of III-V and II-VI family and ternary semiconductor or the sandwich construction between them as the material of Semiconductor substrate.
The present invention utilizes the little characteristic of germanium diffusion coefficient in silicon dioxide, and the selective oxidation of oxygen and silicon, germanium can not be spread in annealing process easily run off away, thereby improved the Ge content of SGOI structure, this method can be applied to Ge content and surpass 10% SGOI material preparation.Because the dosage that injects is low, does not directly form during injection and bury oxygen among the present invention.In high-temperature annealing process, the oxonium ion that is injected into reacts with silicon on every side and generates the silicon dioxide buried regions, and formed burying do not have the silicon island to exist in the oxygen.Simultaneously, because oxygen buried layer is thinner, the silicon Germanium lattice constant is more less than the big caused cubical expansivity of body silicon, and the defective between top layer SiGe and the SGOI zone is considerably less in the silicon germanium material on the insulator of Xing Chenging at last, and transition region is very precipitous, the surface smoothness height.Can find out very intuitively that from following Figure of description method provided by the invention is in the advantage aspect the preparation SGOI material.
Description of drawings
Fig. 1 is the structural representation of the silicon germanium material on the insulator that adopts method preparation of annotating oxygen isolation preparation silicon-on-insulator germanium material based on the SiGe/Si structure provided by the invention.
Fig. 2 is a processing step schematic diagram of annotating the silicon germanium material on the oxygen isolation preparation insulator based on the SiGe/Si structure:
(1) is used for the backing material structural representation that the SGOI material preparation is used;
(2) at SiGe/Si structural table layer growth silicon dioxide layer of protection to be used for the sample structure schematic diagram that ion injects;
(3) structural representation of SiGe/Si material after annotating oxygen;
(4) the sample structure schematic diagram behind the high annealing;
(5) get rid of the SGOI structural representation that obtains behind the silicon dioxide of top layer.
Fig. 3 is Auger spectroscopy (AES) analysis result of the silicon germanium material on the insulator that adopts method preparation provided by the invention.
In the accompanying drawing of Fig. 1 to Fig. 2,1 is the body silicon substrate; 2 is the body germanium-silicon layer; 3 are oxygen that injects or the oxygen buried layer of annealing back formation; 4 is the top layer SiGe; 5 is silicon dioxide layer of protection.
Embodiment
Following specific embodiment helps to understand the features and advantages of the present invention, but enforcement of the present invention never only is confined to this embodiment.
On 4 inches p types (100) SiGe sheet, 800 ℃, under the pure oxygen atmosphere, the SiO that thermal oxide growth 30nm is thick
2Film (among Fig. 2 5); Inject O then
+Ion, the energy of selecting during injection are 60keV, and the dosage of optimization is 3.0 * 10
17Cm
-2, underlayer temperature remains 680 ℃ during injection.The SiGe chip architecture is body silicon/silicon germanium buffer/SiGe (Ge content 15%); Carry out high annealing at last, annealing is at Ar+1%O
2Carry out in the atmosphere, annealing process is: stablized 1 hour after room temperature rises to 1000 degree, rise to 1300 ℃ again, be incubated 5 hours.The annealing back obtains the SGOI structure with 15% hydrofluoric acid selective etching top layer silicon dioxide.
Can find out on ground the characteristics of annotating the method for oxygen isolation preparation silicon-on-insulator germanium material based on the SiGe/Si structure provided by the invention from Fig. 2.The lattice damage and the germanium loss difficult problem that are difficult to overcome at conventional SIMOX prepared SGOI structure; method provided by the invention is by before ion injects; introduce silicon dioxide layer of protection; can limit the outdiffusion of germanium to a great extent; protection germanium-silicon layer lattice quality; satisfied simultaneously and buried the high annealing condition that oxygen forms needs, obtained the silicon germanium material on the high-quality insulator.
Can find that from Fig. 3 adopt the silicon-on-insulator germanium material of method preparation provided by the invention to have sandwich construction clearly, the Ge content of top layer SiGe is not loss almost, and is evenly distributed, the interface is precipitous between the sandwich construction.
Concrete steps and condition are with embodiment 1, and difference is the thick SiO of chemical vapor deposition growth 50nm on sige alloy
2Protective layer.
Concrete steps are with embodiment 1, difference be backing material be monocrystalline silicon thin film/silicon-germanium alloy film/sandwich construction, do not have resilient coating.Protective layer used in the present embodiment is identical with embodiment 1, is the thick SiO of 100nm of thermal oxide growth
2Film.Annealing conditions is with embodiment 1.
Concrete steps are with embodiment 1, difference be backing material be monocrystalline silicon thin film/silicon-germanium alloy film/sandwich construction, do not have resilient coating.Protective layer used in the present embodiment is identical with embodiment 2, is the SiO of CVD deposition
2Film.Annealing conditions is with embodiment 1.Injection is with 2 injection methods, and injecting total metering is 6.0 * 10
17Cm
-2, energy is 80keV.
Concrete steps utilize the method removal top layer silicon dioxide of ion etching to obtain the SGOI structure with embodiment 1 after difference is to anneal.
Embodiment 6
Concrete steps are with embodiment 1, difference be backing material be III-V or II-VI compounds of group/silicon-germanium alloy film/sandwich construction, do not have resilient coating.Protective layer used in the present embodiment is identical with embodiment 2, is the SiO of CVD deposition
2Film.Annealing conditions is with embodiment 1.
Claims (9)
1. the method based on SiGe/Si structure notes oxygen isolation preparation silicon-on-insulator germanium material is characterized in that comprising successively silicon dioxide layer of protection growth, ion injection, high annealing and removal silicon dioxide layer, and specific embodiment is:
(1) before the injection, growthing silica layer on SiGe, bed thickness 20～120nm;
(2) energy range of ion injection is 15～80keV, and the corresponding dosage scope is 1.0 * 10
17～6.0 * 10
17Cm
-2Underlayer temperature is 400～700 ℃;
(3) anneal in 1200～1375 ℃ of scopes, annealing time 1～24 hour, annealing atmosphere are the mist of argon gas or nitrogen and oxygen, and wherein the volume content of oxygen is 0%～20%;
(4) behind the high annealing, remove silicon dioxide layer of protection.
2. by the described method of annotating oxygen isolation preparation silicon-on-insulator germanium material based on the SiGe/Si structure of claim 1, it is characterized in that described Semiconductor substrate comprises body silicon, body germanium, sige alloy, GaAs and other IV-IV, a kind of or sandwich construction between them in the binary of III-V and II-VI family and the ternary compound.
3. by the described method of claim 1, it is characterized in that described silicon dioxide layer of protection is that thermal oxidation or chemical vapor deposition (CVD) method generate based on SiGe/Si structure notes oxygen isolation preparation silicon-on-insulator germanium material.
4. by the described method of claim 1, it is characterized in that the pairing dosage of 25keV is 1.5 * 10 based on SiGe/Si structure notes oxygen isolation preparation silicon-on-insulator germanium material
17Cm
-2The pairing dosage of 60keV is 3.0 * 10
17Cm
-2, energy and dosage ground are optimized close like linear.
5. by the described method based on SiGe/Si structure notes oxygen isolation preparation silicon-on-insulator germanium material of claim 1, the angle when it is characterized in that the ion injection between ion beam and the silicon germanium material normal is 7 °.
6. by the described method of claim 1, it is characterized in that the ion injection comprises once injection or repeatedly injection technology based on SiGe/Si structure notes oxygen isolation preparation silicon-on-insulator germanium material.
7. by the described method of claim 1, it is characterized in that the ion that injects is O based on SiGe/Si structure notes oxygen isolation preparation silicon-on-insulator germanium material
+, O
2 +, HO
+Or H
2O
+A kind of in the oxygen containing ion buries insulating layer of silicon oxide with formation.
8. by the described method based on SiGe/Si structure notes oxygen isolation preparation silicon-on-insulator germanium material of claim 1, it is characterized in that injecting ion is that nitrogen oxygen hybrid ionic injects to form silicon oxynitride mixing buried regions.
9. annotate the method for oxygen isolation preparation silicon-on-insulator germanium material by claim 1 is described based on the SiGe/Si structure, it is characterized in that high annealing after, utilize selective etching of hydrofluoric acid liquid phase or etching to remove the top layer silicon dioxide layer of protection.
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| CNB2004100933698A CN1322547C (en) | 2004-12-22 | 2004-12-22 | Process for preparing silicon-germanium material on insulator based on silicon-germanium / silicon structure separation-by-implantation-of-oxygen |
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| CN102402125A (en) * | 2010-09-16 | 2012-04-04 | 上海华虹Nec电子有限公司 | Photoetching label structure used in manufacture of germanium silicon carbon device and preparation method of photoetching label structure |
| CN102623304A (en) * | 2011-01-30 | 2012-08-01 | 陈柏颖 | Wafer suitable for nanometer technology and method for manufacturing the same |
| CN103474333A (en) * | 2013-09-16 | 2013-12-25 | 中国科学院半导体研究所 | Doping method for p-type zinc telluride single crystal thin-film material |
| CN103646910A (en) * | 2013-12-24 | 2014-03-19 | 中国科学院上海微系统与信息技术研究所 | Preparation method for SGOI (silicon germanium on insulator) structure |
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| JP3376211B2 (en) * | 1996-05-29 | 2003-02-10 | 株式会社東芝 | Semiconductor device, method of manufacturing semiconductor substrate, and method of manufacturing semiconductor device |
| US6300218B1 (en) * | 2000-05-08 | 2001-10-09 | International Business Machines Corporation | Method for patterning a buried oxide thickness for a separation by implanted oxygen (simox) process |
| US6593205B1 (en) * | 2002-02-21 | 2003-07-15 | International Business Machines Corporation | Patterned SOI by formation and annihilation of buried oxide regions during processing |
| US6946373B2 (en) * | 2002-11-20 | 2005-09-20 | International Business Machines Corporation | Relaxed, low-defect SGOI for strained Si CMOS applications |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102402125A (en) * | 2010-09-16 | 2012-04-04 | 上海华虹Nec电子有限公司 | Photoetching label structure used in manufacture of germanium silicon carbon device and preparation method of photoetching label structure |
| CN102623304A (en) * | 2011-01-30 | 2012-08-01 | 陈柏颖 | Wafer suitable for nanometer technology and method for manufacturing the same |
| CN102623304B (en) * | 2011-01-30 | 2015-03-25 | 陈柏颖 | Wafer suitable for nanometer technology and method for manufacturing the same |
| CN103474333A (en) * | 2013-09-16 | 2013-12-25 | 中国科学院半导体研究所 | Doping method for p-type zinc telluride single crystal thin-film material |
| CN103646910A (en) * | 2013-12-24 | 2014-03-19 | 中国科学院上海微系统与信息技术研究所 | Preparation method for SGOI (silicon germanium on insulator) structure |
| CN103646910B (en) * | 2013-12-24 | 2016-06-15 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of SGOI structure |
| CN112490113A (en) * | 2020-11-12 | 2021-03-12 | 武汉新芯集成电路制造有限公司 | Manufacturing method of semiconductor device |
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