CN1649042A - Symmetrical type inductance - Google Patents
Symmetrical type inductance Download PDFInfo
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- CN1649042A CN1649042A CN 200410039349 CN200410039349A CN1649042A CN 1649042 A CN1649042 A CN 1649042A CN 200410039349 CN200410039349 CN 200410039349 CN 200410039349 A CN200410039349 A CN 200410039349A CN 1649042 A CN1649042 A CN 1649042A
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- line segment
- conducting line
- contact plunger
- metal level
- conducting
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- 239000002184 metal Substances 0.000 claims abstract description 89
- 230000006698 induction Effects 0.000 description 27
- 238000010586 diagram Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 231100000219 mutagenic Toxicity 0.000 description 1
- 230000003505 mutagenic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
This invention relates to a symmetric inductor including a first metal layer containing first lead segment at the first side of the symmetric line and a second lead segment at the second side, both of them are symmetric to the symmetric line, a second metallic layer containing a third lead segment set at the first side of the line and a fourth lead at its second side symmetric to the line, a first contact plug connecting one end of the first to the third lead segment, a second plug connecting the other end of the first to the third lead segment, a third plug symmetric to the symmetric line with the first plug connecting one end of the second to the fourth leas segment and a fourth plug symmetric to the symmetric line with the second plug for connecting the other end of the second to the fourth lead.
Description
Technical field
The present invention refers to a kind of symmetric form induction structure especially about a kind of induction structure.
Background technology
Inductance is a kind of passive component that utilizes the magnetic field pattern to come storage power, it has resists the mutagenic characteristic of size of current of flowing through, the common collocation mutually with capacitor is applied to be used to provide functions such as stabling current, phase matched, filtering and resonance in the various wireless communication line design.The basic structure of inductance is to be made of lead circulation or coil, and its inductance value then depends on the factors such as the number of turns, thickness, length, radius and circle inner stuffing kind of coil.In manufacture of semiconductor, for induction structure is integrated on the integrated circuit (IC) chip, the present contact plunger that is mostly to utilize the layout patterns design of two layers of metal and is connected between two metal levels forms the lead circulation.
Please refer to Fig. 1, Fig. 1 is an existing induction structure schematic diagram.As shown in Figure 1, existing inductance 10 is a difference induction (differential inductor), it includes a first metal layer, the first metal layer constitutes one by two staggered first conducting line segments 12 that twine with second conducting line segments 14 and is similar to the pie chart case, and first conducting line segment 12 and second conducting line segment 14 include two overlapping regional A and B.Inductance 10 includes one second metal level in addition, and second metal level includes the overlapping region A below that a privates section 20 is located at first conducting line segment 12 and second conducting line segment 14 at least, and a privates section 24 is located at the overlapping region B below of first conducting line segment 12 and second conducting line segment 14.Be provided with a dielectric layer (not shown) and a plurality of contact plunger 16,18,22,26 between second metal level and the first metal layer in addition through between the dielectric layer, to be used for connecting the first metal layer and second metal level.For example, second conducting line segment 14, privates section 20 utilize contact plunger 16,18 to be connected in overlapping region A place, and first conducting line segment 12, privates section 24 then utilize contact plunger 22,26 to be connected in overlapping region B place.
Existing inductance 10 also can't provide a complete symmetrical structure in the overlapping region of first conducting line segment 12 and second conducting line segment 14, for example in overlapping region A place, second conducting line segment 14 need utilize contact plunger 16,18 are connected to privates section 20, first conducting line segment 12 does not then need to utilize contact plunger to be connected to second metal level, and in overlapping region B place, first conducting line segment 12 need utilize contact plunger 22,26 are connected to privates section 24, second conducting line segment 14 does not then need to utilize contact plunger to be connected to second metal level, so differential signal (V+ at inductance 10 two ends, V-) the therefore dissymmetrical structure dead resistance difference of deriving, cause signal asymmetric, and and then cause phase difference and phase noise situations such as (phase noise), have a strong impact on circuit characteristic.
Summary of the invention
Therefore, purpose of the present invention is promptly providing a kind of symmetric form induction structure, to solve problems of the prior art.
In preferred embodiment of the present invention, this symmetric form inductance includes a first metal layer, the first metal layer includes first side that one first conducting line segment is located at a line of symmetry, and one second conducting line segment is located at second side of line of symmetry, and second conducting line segment and first conducting line segment are symmetrical in line of symmetry; One second metal level, second metal level include first side that a privates section is located at line of symmetry, and a privates section is located at second side of line of symmetry, and privates section and privates section are symmetrical in line of symmetry; One first contact plunger is used for connecting the end of first conducting line segment to the privates section; One second contact plunger is used for connecting the other end of first conducting line segment to the privates section; One and first contact plunger is symmetrical in the 3rd contact plunger of line of symmetry, is used for connecting the end of second conducting line segment to the privates section; And one and second contact plunger symmetrical in the 4th contact plunger of line of symmetry, be used for connecting the other end of second conducting line segment to the privates section.
Because the present invention utilizes the design of layout patterns to form the symmetric form inductance, that is utilize the first metal layer to form the first symmetrical conducting line segment in the both sides of straight line, second conducting line segment, utilize second metal level to form symmetrical privates section in the both sides of straight line, the privates section, and further utilize a plurality of contact plungers that are symmetrical in the straight line both sides to connect the first metal layer and second metal level, therefore the present invention can effectively utilize the induction structure of complete symmetry to reduce dead resistance difference, and it is asymmetric to improve signal, problem such as phase difference and phase noise.
Description of drawings
Fig. 1 is an existing induction structure schematic diagram.
Fig. 2 is one of first embodiment of the invention induction structure schematic diagram.
Fig. 3 is one of second embodiment of the invention induction structure schematic diagram.
Fig. 4 is one of third embodiment of the invention induction structure schematic diagram.
Symbol description
10,30,50,70 inductance
12,14,32,34,52,54,72,74 the first metal layers
16,18,22,26,36,40,42,46,56,60,76,80 contact plungers
20,24,38,44,58,78 second metal levels
A, B overlapping region L line of symmetry
Embodiment
Please refer to Fig. 2, Fig. 2 is one of first embodiment of the invention induction structure schematic diagram.As shown in Figure 2, inductance 30 is a difference induction, it includes a first metal layer, the first metal layer is symmetricly set in line of symmetry L both sides by one first conducting line segment 32 and one second conducting line segment 34 and is formed, first conducting line segment 32 and second conducting line segment 34 all comprise at least one spiral figure, and first conducting line segment 32 and at least one pie chart of second conducting line segment, 34 rough formation, line of symmetry LL then is a diameter of this pie chart case.Inductance 30 includes one second metal level in addition, and second metal level includes a privates section 38 at least and a privates section 44 is symmetricly set in line of symmetry L both sides, wherein first conducting line segment, 32 parts are arranged at privates section 38 tops, and second conducting line segment, 34 parts are arranged at privates section 44 tops.In addition, in other embodiments of the invention, second metal level also can be arranged at the first metal layer top, make conducting line segment 32 parts of winning be arranged at privates section 38 belows, and second conducting line segment, 34 parts is arranged at privates section 44 belows.Be provided with at least one dielectric layer (not shown) and a plurality of contact plunger 36,40,42,46 between second metal level and the first metal layer in addition through between the dielectric layer, to be used for connecting the first metal layer and second metal level.For example, first conducting line segment 32 includes a first make contact at least, one second contact contact point respectively with one the 3rd contact point of second conducting line segment 34, one the 4th contact point is symmetrical in line of symmetry L, and first conducting line segment 32 utilizes contact plunger 36 to make its first make contact be connected to an end of privates section 38 respectively, and utilize contact plunger 40 to make its second contact point be connected to the other end of privates section, utilize contact plunger 42 to make its 3rd contact point be connected to an end of privates section 44 respectively as for 34 of second conducting line segments, and utilize contact plunger 46 to make its 4th contact point be connected to the other end of privates section.
Owing to all being symmetrical in the line of symmetry both sides, the first metal layer of the present invention, second metal level and connection patterns such as contact plunger therebetween be provided with, therefore inductance of the present invention can provide the differential signal (V+ at two ends, V-) a complete symmetrical structure, with effective inductance quality of improving, avoid problems such as phase noise.In addition, symmetric form induction structure of the present invention can be further when the layout pattern, make first conducting line segment of the first metal layer and the corner of second conducting line segment form rounding corner (rounded corner), to avoid current concentration in the corner, cause local resistance value to increase, reduce the quality factor (qualityfactor) of inductance.It should be noted that, symmetric form induction structure of the present invention does not limit the induction structure with pie chart case, other utilization is symmetrical in the line of symmetry both sides and the plural layer metal level that is provided with, conducting line segment and connect therebetween the formed various inductive patterns of structures such as contact plunger, all is applicable to the present invention.
Please refer to Fig. 3, Fig. 3 is one of second embodiment of the invention induction structure schematic diagram.As shown in Figure 3, inductance 50 is a difference induction, it includes a first metal layer, the first metal layer is symmetricly set in line of symmetry L both sides by one first conducting line segment 52 and one second conducting line segment 54 and is formed, first conducting line segment 52 and second conducting line segment 54 all comprise at least one spiral figure, and first conducting line segment 52 and at least one pie chart case of second conducting line segment, 54 rough formation, line of symmetry L then is a diameter of this pie chart case.Inductance 50 includes one second metal level 58 in addition, and at least one dielectric layer (not shown) is arranged between the first metal layer 52,54 and second metal level 58, wherein first conducting line segment 52 and second conducting line segment, 54 parts are covered in second metal, 58 tops, in addition, in other embodiments of the invention, second metal level 58 also can be arranged at the first metal layer 52,54 tops, makes win conducting line segment 52 and second conducting line segment, 54 parts be arranged at second metal level, 58 belows.The first metal layer 52,54 and second metal level 58 utilize a plurality of contact plungers 56,60 through between dielectric layer to connect.For example, it is symmetrical in line of symmetry L that first conducting line segment 52 includes one second contact point of a first make contact and second conducting line segment 54 at least, and first conducting line segment 52 utilizes contact plunger 56 to make its first make contact be connected to an end of second metal level 58, and second conducting line segment 54 then utilizes contact plunger 60 to make its second contact point be connected to the other end of second metal level 58.
Owing to all being symmetrical in the line of symmetry both sides, the first metal layer of the present invention, second metal level and connection patterns such as contact plunger therebetween be provided with, therefore inductance of the present invention can provide the differential signal (V+ at two ends, V-) a complete symmetrical structure, with effective inductance quality of improving, avoid problems such as phase noise.In addition, symmetric form induction structure of the present invention can make first conducting line segment of the first metal layer and the corner of second conducting line segment form the rounding corner, to avoid current concentration in the corner further when the layout pattern, cause local resistance value to increase, reduce the quality factor of inductance.It should be noted that, symmetric form induction structure of the present invention does not limit the induction structure with pie chart case, other utilization is symmetrical in the line of symmetry both sides and the plural layer metal level that is provided with, conducting line segment and connect therebetween the formed various inductive patterns of structures such as contact plunger, all is applicable to the present invention.
Please refer to Fig. 4, Fig. 4 is one of third embodiment of the invention induction structure schematic diagram.As shown in Figure 4, inductance 70 is a difference induction, it includes a first metal layer, the first metal layer is symmetricly set in line of symmetry L both sides by one first conducting line segment 72 and one second conducting line segment 74 and is formed, first conducting line segment 72 and second conducting line segment 74 all comprise plural number circle spiral figure, and first conducting line segment 72 and at least one pie chart case of second conducting line segment, 74 rough formation, line of symmetry L then is a diameter of this pie chart case.Inductance 70 includes one second metal level 78 in addition, and at least one dielectric layer (not shown) is arranged between the first metal layer 72,74 and second metal level 78, wherein first conducting line segment 72 and second conducting line segment, 74 parts are covered in second metal, 78 tops, in addition, in other embodiments of the invention, second metal level 78 also can be arranged at the first metal layer 72,74 tops, makes win conducting line segment 72 and second conducting line segment, 74 parts be arranged at second metal level, 78 belows.The first metal layer 72,74 and second metal level 78 utilize a plurality of contact plungers 76,80 through between dielectric layer to connect.For example, it is symmetrical in line of symmetry L that first conducting line segment 72 includes one second contact point of a first make contact and second conducting line segment 74 at least, and first conducting line segment 72 utilizes contact plunger 76 to make its first make contact be connected to an end of second metal level 78, and second conducting line segment 74 then utilizes contact plunger 80 to make its second contact point be connected to the other end of second metal level 78.
Owing to all being symmetrical in the line of symmetry both sides, the first metal layer of the present invention, second metal level and connection patterns such as contact plunger therebetween be provided with, therefore inductance of the present invention can provide the differential signal (V+ at two ends, V-) a complete symmetrical structure, with effective inductance quality of improving, avoid problems such as phase noise.In addition, symmetric form induction structure of the present invention can make first conducting line segment of the first metal layer and the corner of second conducting line segment form the rounding corner, to avoid current concentration in the corner further when the layout pattern, cause local resistance value to increase, reduce the quality factor of inductance.It should be noted that, symmetric form induction structure of the present invention does not limit the induction structure with pie chart case, other utilization is symmetrical in the line of symmetry both sides and the plural layer metal level that is provided with, conducting line segment and connect therebetween the formed various inductive patterns of structures such as contact plunger, all is applicable to the present invention.
Compared to existing asymmetric inductance structure, the present invention utilizes the design of layout patterns to form the symmetric form inductance, that is utilize the first metal layer to form the first symmetrical conducting line segment in the both sides of straight line, second conducting line segment, utilize second metal level to form symmetrical privates section in the both sides of straight line, the privates section, and further utilize a plurality of contact plungers that are symmetrical in the straight line both sides to connect the first metal layer and second metal level, therefore the present invention can effectively utilize the induction structure of complete symmetry to reduce dead resistance difference, and it is asymmetric to improve signal, problem such as phase difference and phase noise.
The above only is preferred embodiment of the present invention, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (15)
1. a symmetric form inductance is characterized in that, includes:
One the first metal layer, this first metal layer include first side that one first conducting line segment is located at a straight line, and one second conducting line segment is located at second side of this straight line, and this second conducting line segment and this first conducting line segment are symmetrical in this straight line;
One second metal level, this second metal level include this first side that a privates section is located at this straight line, and a privates section is located at this second side of this straight line, and this privates section and this privates section are symmetrical in this straight line;
One first contact plunger is used for connecting the end of this first conducting line segment to this privates section;
One second contact plunger is used for connecting the other end of this first conducting line segment to this privates section;
One is symmetrical in the 3rd contact plunger of this straight line with this first contact plunger, is used for connecting the end of this second conducting line segment to this privates section; And
One is symmetrical in the 4th contact plunger of this straight line with this second contact plunger, is used for connecting the other end of this second conducting line segment to this privates section.
2. symmetric form inductance as claimed in claim 1 is characterized in that, this first conducting line segment and this second conducting line segment form at least one pie chart case.
3. symmetric form inductance as claimed in claim 2 is characterized in that, this straight line is a diameter of this pie chart case.
4. symmetric form inductance as claimed in claim 1, it is characterized in that, other includes at least one dielectric layer and is arranged between this first metal layer and this second metal level, and this first contact plunger, this second contact plunger, the 3rd contact plunger and the 4th contact plunger run through this dielectric layer.
5. symmetric form inductance as claimed in claim 1 is characterized in that, this first conducting line segment partly is arranged at this privates section top of this second metal level.
6. symmetric form inductance as claimed in claim 1 is characterized in that, this second conducting line segment partly is arranged at this privates section top of this second metal level.
7. symmetric form inductance as claimed in claim 1 is characterized in that, this first conducting line segment includes at least one rounding corner.
8. symmetric form inductance as claimed in claim 1 is characterized in that, this second conducting line segment includes at least one rounding corner.
9. a symmetric form inductance is characterized in that, includes:
One the first metal layer, this the first metal layer includes first side that one first conducting line segment is located at a straight line, and one second conducting line segment be located at second side of this straight line, this second conducting line segment and this first conducting line segment are symmetrical in this straight line, and this first conducting line segment to include an one of first make contact and this second conducting line segment second contact point symmetrical in this straight line; And
One dielectric layer, include at least one first contact plunger and one second contact plunger in this dielectric layer, this first contact plunger is used for connecting this first make contact to one second metal level, and this second contact plunger is used for connecting this second contact point to this second metal level.
10. symmetric form inductance as claimed in claim 9 is characterized in that, this first conducting line segment and this second conducting line segment form at least one pie chart case.
11. symmetric form inductance as claimed in claim 10 is characterized in that, this straight line is a diameter of this pie chart case.
12. symmetric form inductance as claimed in claim 9 is characterized in that, this first conducting line segment part and this second metal level be storehouse mutually.
13. symmetric form inductance as claimed in claim 9 is characterized in that, this second conducting line segment part and this second metal level be storehouse mutually.
14. symmetric form inductance as claimed in claim 9 is characterized in that, this first conducting line segment includes at least one rounding corner.
15. symmetric form inductance as claimed in claim 9 is characterized in that, this second conducting line segment includes at least one rounding corner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100393492A CN1299303C (en) | 2004-01-30 | 2004-01-30 | Symmetrical type inductance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100393492A CN1299303C (en) | 2004-01-30 | 2004-01-30 | Symmetrical type inductance |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101264248A Division CN101017726B (en) | 2004-01-30 | 2004-01-30 | Symmetric inductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1649042A true CN1649042A (en) | 2005-08-03 |
| CN1299303C CN1299303C (en) | 2007-02-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100393492A Expired - Lifetime CN1299303C (en) | 2004-01-30 | 2004-01-30 | Symmetrical type inductance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1299303C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100481283C (en) * | 2006-07-18 | 2009-04-22 | 威盛电子股份有限公司 | Inductive element and symmetric inductive component |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19739962C2 (en) * | 1997-09-11 | 2000-05-18 | Siemens Ag | Planar, coupled coil arrangement |
-
2004
- 2004-01-30 CN CNB2004100393492A patent/CN1299303C/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100481283C (en) * | 2006-07-18 | 2009-04-22 | 威盛电子股份有限公司 | Inductive element and symmetric inductive component |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1299303C (en) | 2007-02-07 |
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Granted publication date: 20070207 |