CN1645631A - Optical sensor and display - Google Patents
Optical sensor and display Download PDFInfo
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- CN1645631A CN1645631A CNA200410102658XA CN200410102658A CN1645631A CN 1645631 A CN1645631 A CN 1645631A CN A200410102658X A CNA200410102658X A CN A200410102658XA CN 200410102658 A CN200410102658 A CN 200410102658A CN 1645631 A CN1645631 A CN 1645631A
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Abstract
The present invention provides a light sensor and a display device, to avoid the problem with conventional light sensor which is prepared in a separate module by a separate process and thus the number of components and manufacturing costs can not be reduced and the size of the display device can not be reduced. The light sensor is realized by a TFT provided on an insulation substrate. The TFT is used as a light sensor which detects a photo-current generated by an incident light from outside when the TFT is in a 'turned off' state. A light sensor with excellent sensitivity is realized by enlarging the width of the gate of the TFT. The light sensor can be built in a same substrate of an EL display device as the light sensor can be realized with a TFT provided on a glass substrate.
Description
Technical field
The invention relates to optical sensor and display unit, particularly about in optical sensor that uses thin-film transistor and the display unit that on same substrate, has optical sensor and display part.
Background technology
Present display equipment is the market demands in response to miniaturization, lightweight, slimming, and (flat panel display) is just universal for the flat panel display unit.The a lot of systems of this display equipment are for example by blocking light, detecting the optical touch control panel of input coordinate, or detect outer light with the brightness of the picture of controlling display unit etc., the person that is assembled with the optical sensor.
For example in an example of the 7th figure (A) display optical formula contact panel.The photophore 303 of infrared ray etc. and the light-receiving device 304 of accepting light are sent in the periphery configuration that optical touch control panel 301 ties up to display surface 302.This optical touch control panel system interdicts by waiting with the finger that will carry out the infrared ray that coordinate input photophore 303 sends, and is used as input coordinate with the point of infrared ray no show light-receiving device 304 and detects (for example with reference to patent documentation 1).
The 7th figure (B) ties up to liquid crystal indicator (LCD) 305 optical sensor 306 is installed, according to the light on every side that is subjected to light, and the display equipment of (backlight) backlight brightness of control LCD display unit face.This optical sensor for example uses the light-to-current inversion assembly 306 (for example with reference to patent documentation 2) of Cds unit (cell).
[patent documentation 1] Japanese kokai publication hei 5-35402 communique (the 2nd figure of 2-3 page or leaf)
[patent documentation 2] Japanese kokai publication hei 6-11713 communique (the 3rd page the 1st figure)
Summary of the invention
In existing flat panel display unit, general display part and optical sensor system make with individual other module (module) product via the individual processes of utilizing indivedual production equipments, finish product in same framework with manufacturing by these module parts of assembling.Therefore, the manufacturing cost that reduce the number of parts of machine and reduce each module part has boundary naturally.
Particularly for example the mobile terminal of mobile phone, PDA etc. is very universal now, and therefore, display equipment is required further miniaturization, lightweight, slimming.That is to say, about the employed optical sensor of this display equipment, preferably can miniaturization or cut down number of parts, so that can provide at an easy rate.
The present invention is the creation of carrying out in view of above-mentioned problem, and first scheme of its solution is a kind of optical sensor, comprises:
Gate electrode (gate electrode) is equipped on the substrate;
Semiconductor layer is across this gate electrode and dielectric film and set;
Raceway groove (channel) is equipped on this semiconductor layer; And
Source electrode (source) and drain electrode (drain) are equipped on the both sides of this raceway groove, wherein
Make that the grid of this gate electrode is wide to be the long length more than 10 times of the grid of this gate electrode.
And it is characterized by aforementioned grid wide is that 5 μ m are to 10000 μ m.
And, it is characterized by the aforesaid semiconductor layer if, then produce photoelectric current (photocurrent) between aforementioned source electrode and aforementioned raceway groove or the engaging zones irradiates light between aforementioned drain electrode and aforementioned raceway groove.
And, it is characterized by between the aforementioned source electrode of aforesaid semiconductor layer and aforementioned raceway groove or be provided with the low concentration impurity zone between aforementioned drain electrode and aforementioned raceway groove.
And, it is characterized by aforementioned low concentration impurity zone system and be located at the photoelectric current side that output produces by incident light.
And, it is characterized by each preset time and apply voltages to aforementioned gate electrode, this optical sensor is driven.
Alternative plan of the present invention is a kind of display unit, is following member is equipped on the single insulating substrate:
Display part sets a plurality of pixels (pixel) with thin-film transistor;
Gate electrode is equipped on the insulating properties substrate;
Semiconductor layer is across this gate electrode and dielectric film and set;
Raceway groove is equipped on this semiconductor layer; And
Optical sensor has the source electrode and the drain electrode that are equipped on these raceway groove both sides, wherein
Make that the grid of this gate electrode is wide to be the long length more than 10 times of the grid of this gate electrode.
A kind of display unit of the tertiary system of the present invention is that following member is equipped on the single insulating substrate:
Display part sets a plurality of pixels that are made of EL assembly and thin-film transistor;
Gate electrode is equipped on the insulating properties substrate;
Semiconductor layer is across this gate electrode and dielectric film and set;
Raceway groove is equipped on this semiconductor layer; And
Optical sensor has the source electrode and the drain electrode that are equipped on these raceway groove both sides, wherein
Make that the grid of gate electrode of aforementioned lights transducer is wide to be the long length more than 10 times of the grid of this gate electrode.
And, be the luminescent layer that has first electrode, second electrode at least and clipped by aforementioned EL assembly by aforementioned first and second electrode.
And, be the light around accepting by the aforementioned lights transducer, the brightness of control aforementioned display.
And, it is characterized by the luminescence component that has more corresponding aforementioned lights transducer and set, aforementioned lights transducer system is subjected to light and blocking in order to detect from the light of aforementioned luminescence component.
And, it is characterized by a plurality of aforementioned lights transducers that are connected in parallel, and total grid of aforementioned each optical sensor wide be that 5 μ m are to 10000 μ m.
And, it is characterized by the aforementioned lights transducer and tie up between aforementioned source electrode and aforementioned raceway groove or the aforesaid semiconductor layer of the either party between aforementioned drain electrode and aforementioned raceway groove is provided with the low concentration impurity zone.
And, it is characterized by aforementioned thin-film transistor and comprise:
By same with the aforementioned dielectric film of aforementioned lights transducer, aforementioned gate electrode and the aforesaid semiconductor layer respectively membranous dielectric film that constitutes, gate electrode and semiconductor layer.
And the wide grid to the long aforementioned thin-film transistor of ratio of grid of grid that it is characterized by an aforementioned lights transducer is wide big to the long ratio of grid.
Cubic case of the present invention is a kind of display unit, is following member is equipped on the single insulating substrate:
Display part sets a plurality of pixels with thin-film transistor;
Gate electrode is equipped on the insulating properties substrate;
Semiconductor layer is across this gate electrode and dielectric film and set;
Raceway groove is equipped on this semiconductor layer; And
Optical sensor has the source electrode and the drain electrode that are equipped on these raceway groove both sides, wherein
Make the wide grid of the grid of aforementioned gate electrode long also long, and make that Ioff is 1 * 10 than this gate electrode
-9More than the A.
And it is a plurality of around aforementioned display to it is characterized by the configuration of aforementioned lights transducer system.
The of the present invention the 5th is a kind of optical sensor, is to constitute by being connected in parallel a plurality of following members:
Gate electrode is equipped on the substrate;
Semiconductor layer is across this gate electrode and dielectric film and set;
Raceway groove is equipped on this semiconductor layer; And
Thin-film transistor has source electrode and the drain electrode that is equipped on these raceway groove both sides, wherein
The grid length of aforementioned a plurality of each aforementioned gate electrodes of film crystal piping disposes along a plurality of directions.
And, it is characterized by long direction of the grid that makes aforementioned gate electrode and semiconductor layer and be orthogonal and dispose.
(effect of invention)
According to the present invention, because of detect when the disconnection (off) of TFT because of outside the photoelectric current that produces of the incident of light, utilize as optical sensor, so the available TFT that is formed on the insulated substrate realizes high performance optical sensor.By the wide W of grid that strengthens TFT, can increase the generation zone of photoelectric current, obtain the good optical sensor of sensitivity.The wide W of grid does not realize the optical sensor that sensitivity is good because of only pattern (pattern) change just being strengthened so can not increase the work number in addition.And (Lightly DopedDrain: lightly doped drain electrode) structure can make leakage current characteristic (leak characteristic) stable to make IDD by the taking-up side with the Ioff of the semiconductor layer of optical sensor.
Moreover, because of the optical sensor of this example is TFT, so, can make TFT conducting (on) by applying predetermined voltage to gate electrode.That is to say, by will put on gate electrode, drain electrode and/or the source electrode of optical sensor at the voltage that flows through electric current in the opposite direction with the side of flowing through photoelectric current at preset time, and make optical sensor new (refresh) again, and can make TFT stability of characteristics as optical sensor.
And, can provide to set optical sensor 100 and the display unit of display part on same substrate.But the equal light quantity of light quantity that optical sensor 100 is accepted because of sensing and display part 200, thus can according to around light quantity automatically regulate brightness, in order to do increasing brightness under the bright around situation, and in dark situation decline low-light level.In view of the above, can improve Visual Confirmation, but and power saving.Therefore, in the display unit of the self-luminous assembly that for example uses EL assembly etc., can increase the life-span of this luminescence component.
In addition, in the display unit of assembling optical sensor, by the grid that makes optical sensor wide/grid length than the grid of TFT in the pixel or the 2nd TFT wide/grid is long also big, be more preferred from than the grid of first in pixel and the 2nd TFT wide/grid is long also big, can obtain high function, high performance display device.
And, can help to assemble miniaturization, the slimming of the display unit of optical sensor.Each inscape of optical sensor because of can with the same technology of the TFT of the display equipment that uses organic el element in same membranous formation, set display part and optical sensor even die in same substrate, also can realize the simplification of technology and the reduction of number of parts.
Description of drawings
The 1st figure (A) is the profile that the optical sensor of explanation first example of the present invention is used, and (B) is vertical view, (C) is synoptic diagram.
The 2nd figure (A) and (B) be the performance plot of relation that shows the Vg-Id of optical sensor of the present invention.
The 3rd figure (A) is that explanation has the synoptic diagram that the optical sensor of LDD of the present invention structure is used, and (B) is performance plot.
The 4th figure (A) is the vertical view of the display unit of explanation second example of the present invention, (B) is vertical view, (C) is profile.
The 5th figure (A) is the vertical view of the display unit of explanation the 3rd example of the present invention, (B) is profile, (C) is the circuit synoptic diagram.
The 6th figure is the performance plot that shows the relation of light source of the present invention and Ioff.
The 7th figure (A) is the profile of explanation prior art, (B) is vertical view.
[primary clustering symbol description]
10 insulating properties substrates, 11,111,141 grids
12 gate insulating films, 13,113,143 semiconductor layers
13c, 113c, 143c raceway groove 13d, 113d, 143d drain electrode
13LD, the drain electrode of 113LD low concentration impurity zone
13s, 113s, 143s source electrode 14 dielectric films
16,116 drain electrodes of 15 interlayer dielectrics
17 planarization insulating films, 18 source electrodes
The grid of 100 optical sensors 141 the 2nd TFT
151 signal lines, 152 drain signal line
153 driving power supply lines 154 keep capacitance electrode line
155 capacitance electrodes, 158 source electrodes
161 anodes, 162 electric hole transfer layer
163 luminescent layers, 164 electron supplying layers
165 organic EL layers, 166 negative electrodes
170 keep electric capacity 200 display parts
210 the one TFT 220 the 2nd TFT
230 display unit, 240 luminescence components
250 contact panels, 260 reflecting elements
301 optical touch control panels, 302 display surfaces
303 photophores, 304 light-receiving devices
305 liquid crystal indicators, 306 optical sensors
Id drain current J engaging zones
The long Vd drain voltage of L grid
Vg grid voltage Vs source voltage
The W grid is wide
Embodiment
Explain example of the present invention with reference to the 1st figure to the 6 figure.At first show first example at the 1st figure to the 3 figure.
The thin-film transistor (Thin Film Transistor :) that constitutes by gate electrode, dielectric film and semiconductor layer in the system of the optical sensor shown in first example hereinafter referred to as TFT.
Shown in the 1st figure (A), on the insulating properties substrate 10 that constitutes by quartz glass, alkali-free glass etc., set the dielectric film (SiN, the SiO that become resilient coating (buffer layer)
2Deng) 14, layer laminate is by the semiconductor layer 13 of polysilicon (Poly-Silicon is hereinafter referred to as [p-Si]) film formation thereon.At semiconductor layer 13 superimposed layers by SiN, SiO
2Deng the gate insulating film 12 that constitutes, form gate electrode (being designated hereinafter simply as grid) 11 in the above by the refractory metal formation of chromium (Cr), molybdenum (Mo) etc.
At semiconductor layer 13, the below that is positioned at grid 11 sets the raceway groove 13c that becomes essence (intrinsic) or be essentially essence.And, be equipped with n in the both sides of raceway groove 13c
+The source electrode 13s of the diffusion zone of type impurity and drain electrode 13d.
The vertical view that shows the TFT become optical sensor 100 (semiconductor layer 13 with gate pole 11) at the 1st figure (B).The grid 11 of TFT is that semiconductor layer 13 quadratures are disposed.At this moment, the wide W of the grid of grid 11 system is much larger than the long L of grid.If the long L of grid is more than the 0.5 μ m, the wide W of grid is more than the 5 μ m, then can be used as optical sensor and moves.On concrete, the long L of grid is about 5 μ m～15 μ m, and the wide W of grid is that 5～10000 μ m left and right sides are preferable.In addition, the wide W of grid is the width of the overlapping part of finger grid 11 and semiconductor layer 13 as shown in the figure.It is preferable more than 10 times making long L of grid and the ratio of the wide W of grid.
The 1st figure (C) is that three-D ground shows the raceway groove 13c of semiconductor layer 13 and near the ideograph that can be with (energy band) figure of engaging zones of source electrode 13s (or drain electrode 13d).
In the p-SiTFT of above-mentioned structure, if when TFT disconnects (off), light incides semiconductor layer 13 by the outside, and then the boundary vicinity at raceway groove 13c and source electrode 13s or raceway groove 13c and drain electrode 13d produces engaging zones (junction area) J.Engaging zones J means shown in the 1st figure (A) and dotted line (B), near the zone the boundary portion of the source electrode 13s of adjoining raceway groove 13c (or drain electrode 13d).Near the raceway groove 13c that is essentially essence and the composition surface of source electrode 13s with predetermined impurity concentration, poor because of both impurity concentrations, shown in the 1st figure (C), produce and can be with the zone of moving.And composition surface (boundary portion) impurity concentration on every side can be thought of as the scope of the centre that becomes raceway groove 13c and source electrode 13s.Claim that in this example near the zone this boundary portion is engaging zones J.
In engaging zones J, electronics-electric hole (electron-hole pair) produces photoelectromotive force to because of electric field is drawn back, and obtains photoelectric current.Being that increase with this photoelectric current utilizes as optical sensor in this example, is Ioff to call the photoelectric current that obtains in the following text when this disconnects.Ioff is big more, and is good more as the sensitivity of optical sensor.
Because of the incident of light produces electronics-electric hole to being the engaging zones J with source electrode 13s shown in the hacures in scheming and raceway groove 13c.That is to say, if guarantee then can obtain bigger Ioff by this engaging zones J widely.Be the wide W of grid that directly helps engaging zones J by enlarging in this example,, realize the good optical sensor of sensitivity to guarantee the area of engaging zones J widely.
The Vg-Id curve that shows the TFT that becomes optical sensor 100 at the 2nd figure.The 2nd figure (A) is that the wide W of grid is 600 μ m, and the 2nd figure (B) is 6 μ m.And any all is that the long L of grid is 13 μ m.This figure is the TFT that shows one example use n channel-type, under the condition of drain voltage Vd=10V, source voltage Vs=GND, the situation (solid line) of incident light and the situation (dotted line) of no incident light is arranged.
In the drawings, grid voltage Vg=0V～-become off-state below the 1V, if grid voltage Vg surpasses initial value, then TFT becomes on-state, drain current Id increases.For example if be conceived near the grid voltage Vg=-3V of the complete off-state of TFT, then the situation of the 2nd figure (A) when no incident light, 1 * 10
-12Ioff system about A is increased to 1 * 10 by the irradiation of light
-9About A.
On the other hand, the little situation of the wide W of grid shown in the 2nd figure (B), the situation of no incident light, 1 * 10
-14The photoelectric current of A becomes 1 * 10 because of the incident of light
-11A.The situation of the 2nd figure (B) is that Ioff can detect, and only if become the grade of this level, then because of very small, pretends the difficulty that the feedback (feedback) into Ioff becomes, and the possibility that can't be used as optical sensor and bring into play function is arranged.Therefore, being designed to Ioff is 1 * 10
-9A is above preferable.
So, by strengthening the wide W of grid, if identical light quantity, then little with the wide W of grid situation comparison can obtain big Ioff, and, even the outer light of trace also can obtain big Ioff.
And semiconductor layer 13 is good if be provided with the words in low concentration impurity zone in the taking-up side of photoelectric current, the 3rd figure show three-D ground represent its can with ideograph.
The low concentration impurity zone mean adjoining in source electrode 13s or drain electrode 13d raceway groove 13c side and set, impurity concentration is than source electrode 13s or drain electrode 13d low zone.By setting this low concentration impurity zone, can relax the electric field that concentrates on source electrode 13s (or drain electrode 13d) end.But if excessively reduce impurity concentration, then electric field increases, and the width in low concentration impurity zone (by the length of source electrode 13s end towards raceway groove 13c direction) also influences electric field strength.That is to say that the wide optimum value that exists of impurity concentration and zone in the low concentration impurity zone is for example about 0.5 μ m～3 μ m.
In this example, be provided with low concentration impurity zone 13LD in (or between raceway groove and drain electrode) between for example raceway groove and source electrode, be used as so-called low concentration doping drain electrode LDD (Lightly DopedDrain) structure.
If make the LDD structure, then the zone of the impurity concentration of the centre between raceway groove 13c and source electrode 13s broadens.That is meaning that the engaging zones J that represents with hacures enlarges in source electrode 13s side, the inclination that can be with is mild.
When the wide W of grid was equal situation, the mild person that tilts more made than gradient Gao Zheke and helps engaging zones J that photoelectric current produces in the long L direction increase of grid.That is to say, can make the atomicity of the impurity among the engaging zones J, photoelectric current is easy to generate.
At the 3rd figure (B) is to show the relatively situation that has or not of LDD structure.Figure system shows at the sampling A that does not set the LDD structure, with the drain current Id of the sampling B investigation of the LDD structure with the width 1.4 μ m ratio to the variation of incident light, represents the value of the Igrad of this ratio.In addition, the Igrad of figure (ave) means each Igrad average of white, red, blue, green light source.Wherein, sampling A is that grid wide (W) is identical with sampling B, but long (L) difference of grid.But grid length is the above situation of 5 μ m the poor of the Ioff that causes in the long L difference of grid of almost having no way of, to relatively there not being influence.
In view of the above, do not having among the sampling A of LDD structure, with Igrad (ave) be 1.3579 relatively, in the sampling B with LDD structure, Igrad (ave) becomes 2.05.So, learn that the light of available trace obtains bigger Ioff by making the LDD structure.And, for example with shown in the dotted line of the 2nd figure (A) and the 2nd figure (B), Vg-Id characteristic instability when the situation system of non-LDD structure disconnects, but because of making its stabilisation by it being made the LDD structure, that is leakage current characteristic is stable, so produce the boundary (margin) that each voltage is set, be used as the optical sensor utilization easily.
Above-mentioned optical sensor is owing to being TFT, so by applying predetermined voltage to grid 11, can connect TFT.That is to say,, make optical sensor new again, can make TFT stability of characteristics as optical sensor by putting on grid, drain electrode and/or the source electrode of optical sensor at the voltage that flows through electric current in the opposite direction with the side of flowing through photoelectric current at preset time.But, if this be diode but not the situation of TFT,, be equipotential so grid and source electrode become frequent because of being connected with grid and source electrode (or drain electrode), grid and source electrode independently can't apply voltage, can't be new again.Moreover so the leakage current characteristic instability the when situation of the diode of pn maqting type is not shone because of light is inappropriate to optical sensor.
More than be to illustrate, even but make the opposite bottom gate polar form (bottomgate type) of laminated layer sequence of grid, gate insulating film and semiconductor layer TFT too at so-called top grid type (top gate type) TFT.
Secondly, use the 4th figure that second example is described.Second example system configuration display part and the display unit 230 of above-mentioned optical sensor on same substrate.
The 4th figure (A) is the vertical view that shows display unit 230.Display part 200 is that the pixel that configuration is made of organic el element and thin-film transistor becomes a plurality of rectangular.The above-mentioned optical sensor 100 of (for example four corners) configuration around this display part.Optical sensor 100 is the light around accepting, the brightness of control display part 200.
The 4th figure (B) is the vertical view of a display pixel that shows the display part of the 4th figure (A), and the 4th figure (C) is the profile that shows the A-A line (pixel portion is A '-A ' line of the 4th figure (B)) of the 4th figure (A).But because of optical sensor partly is simplification, so only show the profile of a transducer.
Shown in the 4th figure (B), be formed with display pixel by signal line 151 and drain signal line 152 area surrounded.A near TFT210 who the intersection point of two holding wires, possesses switch module, the source electrode 113s system of the one TFT210 has maintenance capacitance electrode 154 described later and the capacitance electrode 155 that constitutes electric capacity 170 concurrently, and is connected in the grid 141 of the 2nd TFT220 that drives organic el element.The source electrode 143s system of the 2nd TFT220 is connected in the anode 161 of organic el element, and the drain electrode 143d system of other party is connected in the driving power supply line 153 that drives organic el element.
And near TFT, keep capacitance electrode 154 with signal line 151 parallel disposing.This keeps capacitance electrode 154 is to be made of chromium etc., across gate insulating film 12 store charge between the capacitance electrode 155 that is connected with the source electrode 113s of a TFT210, and formation electric capacity.This keeps electric capacity 170 is to set in order to the voltage of the grid 141 that keeps putting on the 2nd TFT220.
Use the 4th figure (C), the TFT210 of the TFT that uses at switch, the 2nd TFT220 and the optical sensor 100 that drive with TFT illustrate.
In addition, the TFT of first example shown in the structure of a TFT210 and the 2nd TFT220 and the 1st figure (A) is much the same, and the Therefore, omited is about the detailed description of repeating part.
The one TFT210 ties up to and sets the dielectric film 14 that becomes resilient coating on the insulating properties substrate 10 that is made of quartz glass, alkali-free glass etc.The semiconductor layer 113 that constitutes by the p-Si film of layer laminate thereon.Be equipped with the raceway groove 113c that becomes essence or be essentially essence at semiconductor layer 113, be equipped with low concentration region 113LD, be equipped with the n type source electrode 113s and the drain electrode 113d of area with high mercury in its outside, have so-called LDD structure in the both sides of raceway groove 113c.
Set gate insulating film 12 on semiconductor layer 113, layer sets the signal line 151 that has the grid 111 that is made of refractory metal concurrently and keeps capacitance electrode line 154 thereon.
Comprehensive lamination interlayer dielectric 15 on gate insulating film 12, grid 111, signal line 151 and maintenance capacitance electrode line 154, fill metal at the contact hole that the drain electrode 113d of corresponding gate insulating film 12 and interlayer dielectric 15 sets, set the drain electrode (drain electrode) 116 that has drain signal line 152 concurrently.In addition, source electrode 113s is extended to constitute and keeps electric capacity 170.
More constitute by organic resin, make the planarization insulating film 17 that has an even surface in for example be equipped with comprehensively.
The 2nd TFT220 ties up on identical insulating properties substrate 10 and the resilient coating 14 and sets semiconductor layer 143.Semiconductor layer 143 in intrinsic-OR in fact the raceway groove 143c of intrinsic implement ion doping (ion doping) in the both sides of raceway groove 143c therewith, to be equipped with source electrode 143s and drain electrode 143d.
The lamination grid 141 that forms gate insulating film 12 and constitute successively on semiconductor layer 143 by refractory metal.
And the same interlayer dielectric 15 that forms with a TFT210 is filled metal at the contact hole that correspondence drain electrode 143d sets, and configuration is connected in the driving power supply line 153 of driving power.And the contact hole that sets at corresponding source electrode 143s sets source electrode (source electrode) 158.More fully form planarization insulating film 17, to should planarization insulating film 17 and the position of the source electrode 158 of interlayer dielectric 15 form contact hole, across this contact hole, set that (Indium Tin Oxide: indium tin oxide) first electrode (anode) 161 of the organic el element of Gou Chenging is on planarization insulating film 17 by the ITO that contacts with source electrode 158.
Organic EL layer 165 ties up on the anode 161 according to electric hole transfer layer 162, luminescent layer 163 and electron supplying layer 164 laminations.More lamination forms second electrode (negative electrode) 166 that is made of magnesium, indium alloy.This negative electrode 166 be equipped on the substrate 10 that forms the organic EL display shown in the 4th figure (B) comprehensively or display part 200 comprehensively.
And the electric hole that organic el element system is implanted by anode combines in the inside of luminescent layer with the electronics of being implanted by negative electrode again, excites the organic molecule that forms luminescent layer, produces exciton (exciton).This exciton is emitted light by luminescent layer in the process of radiation inactivation, this spectrum is released to outside and luminous by transparent anode via transparent insulation substrate.
The detailed construction of TFT that becomes optical sensor 100 is because also identical with shown in the 1st figure (A), the explanation that the Therefore, omited is detailed, and the resilient coating 14 of optical sensor 100, semiconductor layer 13, gate insulating film 12, grid 11 and interlayer dielectric 15, planarization insulating film 17 ties up to two TFT210 that constitute display part 200,220 resilient coating 14, semiconductor layer 113,143, gate insulating film 12, grid 111,141 and interlayer dielectric 15, planarization insulating film 17 same technologies in the same membranous film that forms.That is to say, can form optical sensor simultaneously at same substrate in the technology of display part, identical person realizes because of available inscape with display part, so can help the simplification of technology and the reduction of number of parts widely.
And the thickness system thickness identical with the TFT of display part of the semiconductor layer 13 of optical sensor 100 only changed pattern and can be strengthened the wide W of grid.At this moment, make the wide ratio long of the grid of optical sensor 100 (grid wide/grid is long) to grid than the grid of TFT in the pixel or the 2nd TFT wide/grid is long also preferable greatly.Be more preferred from than the grid of first in pixel and the 2nd TFT wide/grid is long also big.In view of the above, can obtain high function, high performance display device.In addition, be equipped with the not photomask of icon at display part 200, thought does not set preferable on optical sensor 100, in view of the above, but the more outer light of incident.
Then, use the 5th figure to show the 3rd example.This example also is the display unit that optical sensor is assembled in same substrate, by making finger or pen contact display part, with the so-called contact panel (touch panel) 250 of obtaining this input coordinate.
The 5th figure (A) is the vertical view of contact panel 250, and the 5th figure (B) is the B-B line profile of the 5th figure (A).Around as the display part 200 of figure, dispose luminescence component 240 and optical sensor 100.Display part 200 is because of also the display part with second example is the same, the Therefore, omited explanation.Luminescence component 240 is and the pixel identical construction that constitutes display part 200 along display part 200 both sides on every side, to set a plurality of at certain intervals.
And optical sensor 100 is paired with luminescence component 240, and other both sides along display part dispose at certain intervals, with the TFT identical construction shown in the 1st figure.Moreover luminescence component reason substrate is luminous to the top, so the reflecting element 260 of mirror etc. is to be equipped on the same substrate 10, in order to do the light of luminescence component 240 by display part 200 tops, arrival optical sensor 100.
One example of the detection method of input coordinate then is described.The luminescence component 240 that is disposed at the limit of a side among the luminescence component 240 is that each assembly is luminous successively at first, and secondly, the luminescence component 240 that is disposed at the limit of other party is that each assembly is luminous successively.This is luminous if all it's not true on the top of display part 200; be subjected to light through regular meeting at optical sensor 100; only as if the precalculated position that touches display part 200 by finger or input pen etc., the luminous of then specific luminescence component 240 interdicted, and this luminous not becoming is received by specific optical sensor 100.The output of the fluorescent lifetime of luminescence component 240 and optical sensor 100 thus, input coordinate is detected in the luminous zone of being interdicted of sensing, Quadratic Finite Element ground.
It is a plurality of that also to be optical sensor 100 dispose along the both sides of display part this situation, only divides an optical sensor 100 and be connected in parallel, and the wide W of the grid of total becomes 100 μ m.This situation, for example the length of wide W of grid and the long L of grid is about 10 times of inequalities, and the profile of a TFT roughly becomes rectangle, turn 90 degrees so as the 5th figure (C) TFT is revolved, and it is also passable to dispose its direction alternately.By setting a plurality of TFT, can possess superfluous abundant property, be subjected to the average voltinism of light as optical sensor.
In addition, for the situation of acceptance like this, the emission side coloured light that turns blue is got final product from the light of luminescence component.The 6th figure by the relation of the brightness of display light source and Ioff also can understand, and is blue because of the slope of the line among the figure is big, so even micro-light also can obtain big Ioff.
As above-mentioned, the display unit of this example system set the good optical sensor of sensitivity and set this optical sensor in the same substrate of flat panel display unit on.Therefore, be not limited at the structure shown in the second and the 3rd embodiment, all can be suitable for if on same substrate, make the structure of display part and optical sensor, so display part is not limited to use organic el element person uses inorganic EL assembly, LCD assembly, the electric display module etc. starched all can.
And, though illustrate at the bottom emissive type of exporting via insulating properties substrate 10 from the spectrum of luminescence component (bottom emission type) in a second embodiment, only the present invention is defined in this, also can be that the light from luminescence component outputs to and insulating properties substrate 10 rightabout top emission structure (top emission type).
Claims (19)
1. optical sensor comprises:
Gate electrode is equipped on the substrate;
Semiconductor layer is across this gate electrode and dielectric film and set;
Raceway groove is equipped on this semiconductor layer; And
Source electrode and drain electrode are equipped on the both sides of this raceway groove, wherein
Make that the grid of this gate electrode is wide to be the long length more than 10 times of the grid of this gate electrode.
2. optical sensor as claimed in claim 1, wherein this grid is wide is that 5 μ m are to 10000 μ m.
3. optical sensor as claimed in claim 1, wherein this semiconductor layer is if at the engaging zones irradiates light that maybe is somebody's turn to do between this source electrode and this raceway groove between drain electrode and this raceway groove, then produce photoelectric current.
4. optical sensor as claimed in claim 1 wherein maybe is being provided with the low concentration impurity zone between this drain electrode and this raceway groove between this source electrode of this semiconductor layer and this raceway groove.
5. optical sensor as claimed in claim 4, wherein this low concentration impurity zone system is located at the photoelectric current side that output produces by incident light.
6. optical sensor as claimed in claim 1, wherein each preset time applies voltages to this gate electrode, and this optical sensor is driven.
7. display unit is that following member is equipped on the single insulating substrate:
Display part sets a plurality of pixels with thin-film transistor;
Gate electrode is equipped on the insulating properties substrate;
Semiconductor layer is across this gate electrode and dielectric film and set;
Raceway groove is equipped on this semiconductor layer; And
Optical sensor has the source electrode and the drain electrode that are equipped on these raceway groove both sides, wherein
Make that the grid of this gate electrode is wide to be the long length more than 10 times of the grid of this gate electrode.
8. display unit is that following member is equipped on the single insulating substrate:
Display part sets a plurality of pixels that are made of EL assembly and thin-film transistor;
Gate electrode is equipped on the insulating properties substrate;
Semiconductor layer is across this gate electrode and dielectric film and set;
Raceway groove is equipped on this semiconductor layer; And
Optical sensor has the source electrode and the drain electrode that are equipped on these raceway groove both sides, wherein
Make that the grid of gate electrode of this optical sensor is wide to be the long length more than 10 times of the grid of this gate electrode.
9. display unit as claimed in claim 8, wherein this EL assembly luminescent layer of having first electrode, second electrode at least and being clipped by this first and second electrode.
10. as claim 7 or 8 described display unit, the light around wherein this optical sensor system accepts and control the brightness of this display part.
11. as claim 7 or 8 described display unit, wherein have more the luminescence component to should optical sensor and setting, this optical sensor system is subjected to light and blocking by what this luminescence component detected light.
12. as claim 7 or 8 described display unit, a plurality of these optical sensors that wherein are connected in parallel, total grid of this each optical sensor is wide to be that 5 μ m are to 10000 μ m.
13. as claim 7 or 8 described display unit, wherein this optical sensor this semiconductor layer of tying up between this source electrode and this raceway groove the either party between maybe this drain electrode and this raceway groove is provided with the low concentration impurity zone.
14. as claim 7 or 8 described display unit, wherein this thin-film transistor comprises:
By identical with this dielectric film, this gate electrode and this semiconductor layer of this optical sensor respectively membranous dielectric film that constitutes, gate electrode and semiconductor layer.
15. as claim 7 or 8 described display unit, the wide grid to long this thin-film transistor of ratio of grid of the grid of one of them this optical sensor is wide big to the long ratio of grid.
16. a display unit is that following member is equipped on the single insulating substrate:
Display part sets a plurality of pixels with thin-film transistor;
Gate electrode is equipped on the insulating properties substrate;
Semiconductor layer is across this gate electrode and dielectric film and set;
Raceway groove is equipped on this semiconductor layer; And
Optical sensor has the source electrode and the drain electrode that are equipped on these raceway groove both sides, wherein
Make the wide grid of the grid of this gate electrode long also long, make that Ioff is 1 * 10 than this gate electrode
-9More than the A.
17. as claim 7 or 8 described display unit, wherein this optical sensor system configuration is a plurality of around this display part.
18. an optical sensor is to constitute by being connected in parallel a plurality of following members:
Gate electrode is equipped on the substrate;
Semiconductor layer is across this gate electrode and dielectric film and set;
Raceway groove is equipped on this semiconductor layer; And
Thin-film transistor has the source electrode and the drain electrode that are equipped on these raceway groove both sides, wherein
The grid length of these a plurality of each these gate electrodes of film crystal piping disposes along a plurality of directions.
19. optical sensor as claimed in claim 18, wherein this gate electrode is the long direction quadrature of grid and disposing.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003427195 | 2003-12-24 | ||
| JP2003427195 | 2003-12-24 |
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| CN1645631A true CN1645631A (en) | 2005-07-27 |
| CN100369270C CN100369270C (en) | 2008-02-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB200410102658XA Expired - Fee Related CN100369270C (en) | 2003-12-24 | 2004-12-24 | Optical sensor and display |
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| CN (1) | CN100369270C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100419557C (en) * | 2005-08-31 | 2008-09-17 | 爱普生映像元器件有限公司 | Liquid crystal display device |
| CN101847343A (en) * | 2009-03-27 | 2010-09-29 | 索尼公司 | Display panel and display device |
| CN102759400A (en) * | 2011-04-25 | 2012-10-31 | 三星电子株式会社 | Light-sensing apparatus and method of driving the same |
| CN101458430B (en) * | 2007-12-11 | 2013-05-22 | 株式会社日本显示器西 | Light sensor and display |
| CN104765422A (en) * | 2015-04-28 | 2015-07-08 | 小米科技有限责任公司 | Screen module of mobile equipment and mobile equipment |
| CN104867948A (en) * | 2015-06-10 | 2015-08-26 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method and control method thereof, control assembly, and display device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3541625B2 (en) * | 1997-07-02 | 2004-07-14 | セイコーエプソン株式会社 | Display device and active matrix substrate |
| US6437403B1 (en) * | 1999-01-18 | 2002-08-20 | Sony Corporation | Semiconductor device |
| CN100485943C (en) * | 1999-06-02 | 2009-05-06 | 株式会社半导体能源研究所 | Semiconductor device |
| SG143942A1 (en) * | 2001-02-19 | 2008-07-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
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2004
- 2004-12-24 CN CNB200410102658XA patent/CN100369270C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100419557C (en) * | 2005-08-31 | 2008-09-17 | 爱普生映像元器件有限公司 | Liquid crystal display device |
| CN101458430B (en) * | 2007-12-11 | 2013-05-22 | 株式会社日本显示器西 | Light sensor and display |
| CN101847343A (en) * | 2009-03-27 | 2010-09-29 | 索尼公司 | Display panel and display device |
| CN102759400A (en) * | 2011-04-25 | 2012-10-31 | 三星电子株式会社 | Light-sensing apparatus and method of driving the same |
| CN102759400B (en) * | 2011-04-25 | 2017-06-06 | 三星电子株式会社 | Light sensing apparatus and the method for driving light sensing apparatus |
| CN104765422A (en) * | 2015-04-28 | 2015-07-08 | 小米科技有限责任公司 | Screen module of mobile equipment and mobile equipment |
| CN104867948A (en) * | 2015-06-10 | 2015-08-26 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method and control method thereof, control assembly, and display device |
| CN104867948B (en) * | 2015-06-10 | 2018-01-19 | 京东方科技集团股份有限公司 | Array base palte and its manufacture method, control method, control assembly and display device |
| US10102822B2 (en) | 2015-06-10 | 2018-10-16 | Boe Technology Group Co., Ltd. | Array substrate, manufacturing method thereof, control method, control assembly, and display device |
| US10629164B2 (en) | 2015-06-10 | 2020-04-21 | Boe Technology Group Co., Ltd. | Array substrate, manufacturing method thereof, control method, control assembly, and display device |
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| Publication number | Publication date |
|---|---|
| CN100369270C (en) | 2008-02-13 |
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