CN1633223A - Organic luminous element structure - Google Patents
Organic luminous element structure Download PDFInfo
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- CN1633223A CN1633223A CN 200510003761 CN200510003761A CN1633223A CN 1633223 A CN1633223 A CN 1633223A CN 200510003761 CN200510003761 CN 200510003761 CN 200510003761 A CN200510003761 A CN 200510003761A CN 1633223 A CN1633223 A CN 1633223A
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- element structure
- luminous element
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Abstract
This invention discloses an organic luminous element structure including an anode, a cathode and a luminous complex layer containing a subject bulk and an object bulk, among which, said subject has a valence level used in the hole injection layer or a hole transmission layer, said object bulk has a conduction band level doped in the subject bulk and the energy difference of the two levels is less than 2.5 electron-volt.
Description
Technical field
The present invention relates to organic illuminating element, particularly a kind of structure of organic illuminating element.
Background technology
Figure 1 shows that traditional organic light-emitting structure, the making of general transparent organic light emitting display is to plate the required organic layer of organic illuminating element at anode 102, for example: hole injection layer 104, hole transmission layer 106, luminescent layer 108 and electron transfer layer 110 etc., plate another opposite electrode 102 ' (negative electrode) at last again, the injection quality in hole and interface and the energy level difference between anode and the hole injection layer have very big relation, and the injection character in while hole and the electric charge of element joint efficiency more also are related to efficiency of element and life-span.Therefore improve the injection in hole, avoid electric charge to be accumulated in the interface of anode and organic layer, critical influence is arranged for the lifting of component life.In addition, because the organic layer thickness of element is quite thin, the problem roughness of anode surface can influence whether element leaks electricity, short circuit etc. causes component life to shorten.So the organic layer thickness in the increase element reduces the coarse influence to element of substrate surface, also be a very important direction.But because of the charge-conduction speed of organic layer is not high, the charge transfer that can slow down relatively when thickness increases causes driving voltage to increase.Therefore adding alloy forms p type or n type doped layer to the transferring material conductivity can remedy because increase the problem that thickness may cause driving voltage to increase to improve.(tetrafluoro-tetracyanoquinodimethane F4-TCNQ) is entrained in raising hole-conductive rate in the hole injection layer as the p type, can effectively reduce element drives voltage to have some reported in literature to utilize tetrafluoro-four cyanogen quinone bismethane recently; Yet, because the F4-TCNQ molecule is too little, move easily, so doping content can not be too high in order to avoid the diffusion extinguishing is luminous, or crystallization and cause element function to reduce.
Summary of the invention
Embodiments of the present invention are by add alloy (as: fullerene ((fullerene))) in hole injection layer or hole transmission layer, increasing the hole-conductive rate, thereby can increase the thickness of hole injection layer or hole transmission layer and do not influence the current-voltage characteristic of element.
Embodiments of the present invention provide a kind of organic light-emitting structure, and this organic light-emitting structure comprises anode, negative electrode and luminous composite bed; This luminous composite bed comprises subject and object; This main body has valence-band level, and is used for hole injection layer or hole transmission layer, and this object has conduction level, and is doped in this main body, and wherein, the energy difference of this valence-band level and this conduction level is less than 2.5 electron-volts.
Description of drawings
Fig. 1 is the structure chart of traditional organic illuminating element.
Fig. 2 is the structure chart according to the organic illuminating element of embodiment of the present invention.
Fig. 3 is the energy level schematic diagram of the subject and object of organic light emission shown in Figure 2.
Fig. 4 A is the corresponding relation figure of driving voltage to the drive current that unit are produced of organic light-emitting structure.
Fig. 4 B is the corresponding relation figure of drive current to the brightness that unitary current produced of organic light-emitting structure.
Figure 5 shows that traditional organic light-emitting structure and reliability according to the organic light-emitting structure of embodiment of the present invention.
Following symbol implication in the accompanying drawings is respectively:
EC～conduction level; EV～valence-band level; 102～anode; 102 '～negative electrode; 104～hole injection layer; 106～hole transmission layer; 108～luminescent layer; 110～electron transfer layer; 202～anode; 203～hole injection layer; 204～luminous composite bed; 205～hole transmission layer; 206～negative electrode; 302～main body; 304～object.
Embodiment
With reference to Fig. 2, it is the organic light-emitting structure according to embodiment of the present invention.As shown in Figure 2, this organic light-emitting structure comprises anode 202, negative electrode 206 and luminous composite bed 204; Comprise subject and object in this luminous composite bed 204, this main body is used for hole injection layer 203 or hole transmission layer 205, and this object is doped in this main body.This main body is to have that the hole is injected or the material of hole transport characteristic, for example: phthalocyanine metal dyestuff (MetalPhthalocyanine) and have the compound of triarylamine (Triarylamine), the phthalocyanine metal dye composition can be CuPc, and its structure is as follows:
Triarylamine compound can be MTDATA, 2T-NATA, and NPB, its structure is as follows respectively:
Figure 3 shows that the energy level schematic diagram of main body 302 and object 304, this main body has valence-band level EV, and this object has conduction level EC, and wherein, the energy difference EC-EV of this valence-band level EV and this conduction level EC is less than 2.5 electron-volts.This object can be organic material, and preferably this organic material is Alq; This object also can be inorganic material, and preferably this inorganic material is a fullerene, and this fullerene can comprise C60, C70, C76, C78, C82, C84, C90, C96, its related derivatives and have substituent fullerene.Generally speaking, the molecular dopant concentration of this object can be 0.1% to 50%, and is preferably 1% to 20%, and this object has spreading depth, preferred 5 to 500 nanometers of this spreading depth in this main body.
Fig. 4 A and Fig. 4 B are depicted as traditional organic light-emitting structure and characteristic comparison diagram according to the organic light-emitting structure of embodiment of the present invention.Fig. 4 A is the corresponding relation figure of driving voltage to the drive current that unit are produced of organic light-emitting structure, the curve that diamond data points was linked to be with C60 as object, and spreading depth is 60 nanometers, the curve that circular data point was linked to be with F4-TCNQ as object, and spreading depth is 150 nanometers, as object, and spreading depth is 120 nanometers to the curve that the Square Number strong point is linked to be with C60.Generally speaking, when driving voltage during greater than the critical voltage of organic light-emitting structure, just have significant drive current and produce, critical voltage value then is low more, represents the characteristic of this organic light-emitting structure good more; By Fig. 4 A as can be known, though the critical voltage point at Square Number strong point is higher than circular data point, can't differ from too much, the critical voltage of diamond data points is then low than circular data point.
Fig. 4 B is the corresponding relation figure of drive current to the brightness that unitary current produced of organic light-emitting structure, the curve that diamond data points was linked to be with C60 as object, and spreading depth is 60 nanometers, the curve that circular data point was linked to be with F4-TCNQ as object, and spreading depth is 150 nanometers, as object, and spreading depth is 120 nanometers to the curve that the Square Number strong point is linked to be with C60.Generally speaking, under identical drive current, the brightness that unitary current produced of organic light-emitting structure is high more good more, by Fig. 4 B as can be known, under identical drive current, diamond data points is all high than circular data point with the brightness that unitary current produced at Square Number strong point.Complex chart 4A and Fig. 4 B as can be known, with spreading depth be 60 nanometers C60 as the characteristics of luminescence of the formed organic light-emitting structure of object than traditional be that the F4-TCNQ of 150 nanometers is good as the formed organic light-emitting structure of object with spreading depth.
Figure 5 shows that traditional organic light-emitting structure and reliability according to the organic light-emitting structure of embodiment of the present invention, the longitudinal axis of Fig. 5 is represented the brightness after the normalization, and transverse axis has been represented the operating time of organic light-emitting structure, the A curve with F4-TCNQ as object, and spreading depth is 150 nanometers, the B curve then is as object with C60, and spreading depth is 60 nanometers, and C curve with C60 as object, and spreading depth is 120 nanometers, the deterioration in brightness situation of A curve is very serious as shown in Figure 5, with 250 hours operating times be example, the brightness of A curve approximately only surplus original 75%, and that the brightness of B curve and C curve all also has is original 90%, the reliability of visible organic light-emitting structure according to embodiment of the present invention is far above traditional organic light-emitting structure.
Embodiments of the present invention are by add alloy (as: fullerene) in hole injection layer or hole transmission layer, to increase the hole-conductive rate, so just can increase the thickness of hole injection layer or hole transmission layer and do not influence the current-voltage characteristic of element.
Though the present invention is with reference to preferred embodiment describing; but it is not in order to limit the present invention; any those skilled in the art; under the situation that does not break away from the spirit and scope of the present invention; can carry out some changes and modification to it, so protection scope of the present invention should be as the criterion with the scope that claim was defined.
Claims (9)
1. organic luminous element structure comprises:
Anode;
Negative electrode; And
Luminous composite bed is sandwiched between this anode and the negative electrode, and this luminous composite bed comprises:
Main body has valence-band level, and is used for hole injection layer or hole transmission layer; And
Object has conduction level, and is doped in this main body;
Wherein, the energy difference of this valence-band level and this conduction level is less than 2.5 electron-volts.
2. the organic luminous element structure of claim 1, wherein, this object is an organic material.
3. the organic luminous element structure of claim 2, wherein, this organic material is Alq.
4. the organic luminous element structure of claim 1, wherein, this object is an inorganic material.
5. the organic luminous element structure of claim 4, wherein, this inorganic material is a fullerene.
6. the organic luminous element structure of claim 5, wherein, this fullerene comprises C60, C70, C76, C78, C82, C84, C90, C96, its related derivatives and has substituent fullerene.
7. the organic luminous element structure of claim 1, wherein, the molecular dopant concentration of this object is 0.1% to 50%.
8. the organic luminous element structure of claim 1, wherein, the molecular dopant concentration of this object is 1% to 20%.
9. the organic luminous element structure of claim 1, wherein, this object has spreading depth in this main body, and this spreading depth is 5 to 500 nanometers.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510003761 CN1633223A (en) | 2005-01-11 | 2005-01-11 | Organic luminous element structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200510003761 CN1633223A (en) | 2005-01-11 | 2005-01-11 | Organic luminous element structure |
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| CN1633223A true CN1633223A (en) | 2005-06-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103890136A (en) * | 2011-10-17 | 2014-06-25 | 欧司朗光电半导体有限公司 | Organic electronic component with dopant, use of a dopant and method for the production of the dopant |
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2005
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103890136A (en) * | 2011-10-17 | 2014-06-25 | 欧司朗光电半导体有限公司 | Organic electronic component with dopant, use of a dopant and method for the production of the dopant |
| CN106046030A (en) * | 2011-10-17 | 2016-10-26 | 欧司朗Oled股份有限公司 | Organic Electronic Component with Dopant, Use of a Dopant and Method for the Production of the Dopant |
| CN106046030B (en) * | 2011-10-17 | 2019-07-16 | 欧司朗Oled股份有限公司 | The application of organic electronic device, dopant with dopant and method for manufacturing dopant |
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