CN1632963A - Shape memory alloy enhancement piezo-electric driver for intelligent structure and making technique steps - Google Patents
Shape memory alloy enhancement piezo-electric driver for intelligent structure and making technique steps Download PDFInfo
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- CN1632963A CN1632963A CN200410065659.1A CN200410065659A CN1632963A CN 1632963 A CN1632963 A CN 1632963A CN 200410065659 A CN200410065659 A CN 200410065659A CN 1632963 A CN1632963 A CN 1632963A
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 229910001285 shape-memory alloy Inorganic materials 0.000 title claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 16
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Abstract
This invention relates to the shape memory alloy increasing piezoelectricity driver used in intelligent structure and its process steps. The driver is composed of shape memory alloy film, piezoelectricity ceramic deoxidizing layer and piezoelectricity layer. Its process method comprises the following steps: to process single side deoxidizing to piezoelectricity ceramic base materials under 800 to 1000 degrees; then take it in the air for cooling to form needed arc structure and to clear and polish its surface; to put the sample in the special clamper for magnetic control splash and to deposit the shape memory alloy film on the deoxidizing layer and to take out through vacuum crystal and annealing; finally to coat two end surfaces with conductive glue as electrode.
Description
Affiliated technical field:
The present invention relates to a kind of high driving efficiency that has, the high-performance piezoelectric actuator of big bearing capacity can be used for the actuation element of intelligence structure or other association area.
Background technology:
The research of smart material and structure originates from the U.S. in the mid-80, and the development of this technology and application mean the enhancing of engineering structure function, the raising of structure service efficiency, the optimization of version and the reduction of structural maintenance cost.Its notion just causes the very big attention of the main developed country in the world once appearance, classifies it as first developing field one after another.Smart material and structure all has broad application prospects in military fields such as Aero-Space, naval vessel weapon and fields such as mechanical structure, civil engineering, has obtained Preliminary Applications at present.
The intelligence structure biggest advantage is its intellectuality, promptly at first by sensor-based system identification external parameter, then pass through the analysis and the judgement of control system, make corresponding action by drive system at last, thus mechanical properties such as the shape of change intelligence structure, rigidity, position, natural frequency, damping.Obviously, drive material and element thereof and in intelligence structure, accounting for very important effect.To a certain extent, the height of driving element performance has directly determined the height of intelligence structure intelligence.And, sensing technology is relative with control technology ripe at present, therefore, the research of driving element has become a bottleneck of restriction intelligence structure development, and the driving material of the high comprehensive performance that R and D are novel and element are the developing task of top priority of current intelligence structure.
Piezoelectric is because response speed is fast, and active force is big, and steady performance has become widely used driving material in the intellectual material structure.But the shortcoming of piezoelectric drive element maximum is limiting strain too little (only having about 1000 μ ε), usually is difficult to satisfy the actual requirement of the big displacement drive of structure, is necessary to study the method that improves its driving force.At present, improve the drive characteristic that drives material and element thereof and mainly contain two kinds of approach: the one, the performance of raising material self, promptly all kinds of piezoelectric constants, electrostriction coefficient etc.; The 2nd, improve structure, as improving enlarger etc.
With regard to improving the piezoelectric performance, can carry out study on the modification to existing piezoelectric, improve its service behaviour, comprise temperature stability, ageing stability etc.; Can develop the piezo-electricity composite material of the organic and inorganic of different mode of communicating; Can greatly develop piezoelectric film material, its direction towards microminiaturization is developed; Can develop the single-crystal iron electric material of especially big strain.At present, all obtained certain progress at this aspect several.Especially University of Pennsylvania in 1997 has developed and has been referred to as ferro-electricity single crystal piezoelectric ceramic " infant genius ", that have relaxation property, in tripartite crystal orientation＜001〉strain even up to 1.7% on the direction, the strain of the piezoelectric ceramic that the strain ratio of these relaxation type piezoelectric single crystal is common has had the raising of an order of magnitude.But the research of these piezoelectric aspect of performances mainly also rests on laboratory stage, also has a segment distance from practicability.
In addition, with regard to the improvement of activation configuration aspect, various novel Drive Structure emerge in an endless stream, as bimorph formula, multilayer piezoelectric bimorph formula, only stone piezo crystals chip or the like.What use was maximum now is the crooked driving element of linear multiple field driver and double-disk, and they all have higher displacement and certain motive force.The research of this respect 10 years was a focus at the first two, had also obtained certain achievement.As late nineteen eighties, Britain J. P. Morgan ﹠ Co. has developed d
33Can reach the high-performance piezoelectric actuator of 850PC/N; Material system of Univ Pennsylvania USA had made " Moonie " type brass-PZT driving element, its d in 1991
33Can reach 2500PC/N, be 4～5 times of conventional PZT; The early 1990s, Japanese NEC Corporation has successfully developed the superimposed elements of class leaded multilayer ceramic capacitor structure, has advantages such as volume is little, driving voltage is low, displacement is big.Domestic aspect, BJ University of Aeronautics ﹠ Astronautics and Nanjing Aero-Space University have obtained certain achievement in research.But this quasi-driver has their unsurmountable disadvantages, because they all belong to the application of mechanical amplification mechanism, when obtaining big strain, has also reduced actuating force, is that cost obtains bigger displacement to sacrifice actuating force promptly.This is worthless in a lot of actual uses.
In recent years, a kind of brand-new preset stress formula Drive Structure has occurred.RAINBOW driving element (ReducedAnd Internally Biased Oxide Wafer) promptly belongs to a kind of of better performances wherein.The RAINBOW driver is by reducing zone and reducing zone is not two-layer forms, and unique domes are arranged.It can produce the axial displacement than conventional piezoelectricity, the big order of magnitude of ferroelectric driver under electric field action.Wherein, what really play driving action is the not reducing zone of RAINOBW element, type of drive generally is piezoelectric effect and antiferroelectric-ferroelectric phase transition, and reducing zone has lost the original crystal structure of basis material through behind the high temperature reduction, do not drive function, but it has played to the prefabricated stress of element, improve the effect that drives efficient, therefore essential, simultaneously, it also is the feature of RAINBOW structure maximum.Because the existence of prefabricated stress, the bearing capacity of RAINBOW element improves a lot, and, since reducing zone be not chemical bond between the reducing zone, thereby overcome the defect that the interior easy fatigue of adhesive linkage of other preset stress formula Drive Structure comes off.Can say so, the RAINBOW element also can carry bigger stress when producing big strain, and working stability, and service time is long.These advantages be other kinds driver can not compare.Its preparation method is that common piezoelectricity or ferroelectric material are placed on the graphite substrate, and reduction reaction at high temperature takes place, at room temperature cool off fast subsequently because reducing zone and not the coefficient of expansion between the reducing zone have difference, formed after the cooling and had inner prestressed domes.Because the RAINBOW element is from occurring till now, time in a few years not, thereby total bibliographical information is few.At present, its research mainly concentrates on the U.S..For example: the RAINBOW element based on different PSZT material prescriptions has been studied by ceramic engineering system of U.S. Clemmensen (Clemson) university, the result shows, its maximum axial displacement under electric field action can reach 100～273 μ m, is about 200 times of common piezoelectric actuator; The NASA Langley Research Center of the U.S. has then been made the storehouse based on the RAINBOW structure, it is reported, its maximum drive displacement and actuating force have reached 10mm and 250g[56 respectively], near degree of being practical; People such as Dausch have studied the electricdomain motion in the RAINBOW element, have summed up arrange again relation with extra electric field of 90 ° of electricdomains by the test of reality; People such as M.W.Hooker have studied the coercive field of RAINOBOW element and the relation between the reducing zone thickness, have provided a kind of non-destructive method of testing reducing zone thickness.Domestic research in this respect is comparatively weak, is in the starting stage substantially, has only some relevant introductory articles.
In sum, utilize the RAINBOW structure might prepare the piezoelectric actuator of the big drive displacement of large driving force.But a lot of aspects all need to study further.For example: lack that the foundation of model and optimizing design scheme, reduction reaction mechanism are not clear, microstructure and macroscopic properties research is not enough, combination property remains further to be studied etc.In addition,, make both driving force stacks, then might prepare and drive the higher driving element of efficient, but not find the correlative study of this respect at present both at home and abroad if can RAINBOW element and marmem (SMA) is integrated by certain method.
Summary of the invention:
Problem according to above-mentioned prior art existence, the objective of the invention is at the demand of intelligence structure the high-performance piezoelectric actuator, proposed marmem film and RAINBOW structure piezoelectric ceramic are carried out integrated thinking, thereby developed high performance piezoelectric actuator.For intelligence structure provides a kind of response fast, drive displacement, the driving element that actuating force is big.It has not only kept the characteristics of the big driving efficient of RAINBOW structure, but also has introduced the driving effect of marmem, and has effectively improved the weak shortcoming of reducing zone in original RAINBOW structure, has improved the bearing capacity of driver greatly.
For achieving the above object, specification requirement of the present invention comprises: the 1) design of activation configuration, promptly determine the piezoelectric reducing zone and the thickness ratio of reducing zone not according to the result of mechanical analysis; 2) suitable basis material promptly is selected to suitable piezoelectric ceramic of branch and marmem to improve processing technology; 3) high temperature reduction of piezoelectric ceramic is promptly formulated the domes that suitable reducing process parameter obtains driver; 4) integrated with marmem is promptly at the reducing zone of the piezoelectric ceramic method deposition shape memorial alloy film by magnetron sputtering; 5) displacement measurement of driver and demarcation.
For reaching specification requirement, concrete formation of the present invention is, piezoelectric ceramic produces the domes of layering by high temperature reduction, and the lower floor of arch is the reducing zone of piezoelectric ceramic, the upper strata is unreduced piezoelectric layer, and is coated with the marmem film on the reducing zone of piezoelectric ceramic.Wherein the reducing zone of piezoelectric ceramic accounts for 1/5～2/5 of gross thickness, and the marmem film is 3～6 μ m.
The present invention: the manufacturing process steps that is used for the shape memory alloy enhancement piezo driver of intelligence structure is:
1. adopt the stress state of each layer of analysis of finite element method driver;
2. determine marmem film, reducing zone, reducing zone thickness separately not according to mechanical analysis;
3. the piezoelectric ceramic basis material was reduced 40～60 minutes at 800 ℃～1000 ℃ following single faces;
4. after reaching the recovery time piezoelectric ceramic is taken out cooling at room temperature from high temperature;
5. the piezoelectric ceramic that will cool off and have domes fully carries out ultrasonic waves for cleaning;
6. make the required frock clamp of plating mould;
7. show deposition 5 μ m marmem (TiNi) films with magnetically controlled sputter method at reducing zone;
8. sample is carried out subsequent annealing to the marmem film under condition of high vacuum degree;
9. cover conducting resinl as electrode at two end face Tu of driver, and polarization;
10. test its drive displacement and bearing capacity, and demarcate;
The invention has the beneficial effects as follows: 1) by high temperature reduction piezoelectric ceramic is carried out prefabricated stress, thereby improve the piezoelectric effect of piezoelectric element, the electricity that has obtained super large causes displacement; 2) integrated by with shape memory alloy film eliminated the contained microdefect of reducing zone, improved the bearing capacity of driver greatly; 3) introducing of marmem helps improving piezoelectric layer shared ratio in total; 4) marmem has hot driving force, also can be used as a kind of driving mechanism when needing.In sum, compare with traditional piezoelectric actuator, under the identical situation of component size, the present invention all has the raising about twice on drive displacement and bearing capacity, and can suitably reduce driving voltage and then improve the fail safe of its use.Utilize the present invention can fully satisfy the demand of intelligence structure, realize the start effect that the intelligence structure response is fast, drive displacement is big and bearing capacity is strong, promote the practical application of intelligence structure greatly the high-performance piezoelectric actuator.In addition, the present invention also can be used for other association area.
Description of drawings:
Fig. 1 is a shape memory alloy enhancement piezo driver schematic diagram.
Number in the figure title: 1. marmem film (TiNi), the 2. reducing zone of piezoelectric ceramic, the 3. piezoelectric layer of piezoelectric ceramic (not reducing zone).
Fig. 2 is the reduction schematic diagram of piezoelectric ceramic.
Embodiment:
As shown in Figure 1, the shape memory alloy enhancement piezo driver of the present invention-be used for intelligence structure is a kind of layer-stepping driving element with domes, is made up of the reducing zone (2) and the piezoelectric layer (3) of marmem film (1), piezoelectric ceramic.Reducing zone mainly plays a part the prefabricated stress of piezoelectric layer, and piezoelectric layer and marmem play driving action.Driver manufacturing process is:
At first according to the difference of thermal coefficient of expansion between the reducing zone of marmem film, piezoelectric ceramic and the piezoelectric layer, adopt each ply stress state behind the analysis of finite element method high temperature reduction, and determine separately thickness according to analysis result.Then piezoelectric ceramic basis material (Φ 20 * 0.5 for PZT5, size) is carried out the single face reduction under 1000 ℃ of high temperature, take out cooling rapidly in air subsequently, clean and polished surface behind the required domes to be formed.Sample is put into special-purpose frock clamp carry out magnetron sputtering, show deposition shape memorial alloy film at reducing zone, and through taking out behind the vacuum subsequent annealing.At last at two end face coated with conductive glue as electrode.Most important two stages are as follows in its preparation process:
1, the high temperature reduction of piezoelectric ceramic
As shown in Figure 2, the PZT5 piezoelectric ceramic that is of the required size directly is put on reducing agent-graphite, again zirconia is placed on the piezoelectric ceramic and reduction reaction takes place with the top that prevents potsherd.At last potsherd, graphite, zirconia are put into high temperature sintering furnace, 800 ℃～1000 ℃ following insulations were taken out air cooling after 40～60 minutes.Because the bottom of piezoelectric ceramic piece contacts with graphite reduction reaction takes place, generate reducing zone, its thermal coefficient of expansion increases greatly, and its top owing to zirconic protective effect reduction reaction does not take place, and thermal coefficient of expansion is constant.Therefore, arch appears in structure.Realization is to the prefabricated stress of piezoelectric ceramic piece.According to the result of finite element analysis, it is best that reducing zone accounts for 1/5 of gross thickness～2/5 o'clock prefabricated stress effect.
2, integrated with the marmem film
Piezoelectric patches after the reduction is carried out cleaning polishing, remove the oxide particle of staying the reducing zone surface after reducing.To clean sample and adopt special fixture to put into magnetron sputtering coater, and show depositing TiN i film at reducing zone, thickness is 3～6 μ m.Because the vapour deposition of rete can be filled up the microdefect that reducing zone shows, thereby has improved the forward bearing capacity and the intensity of inner driver greatly; And because the thermal coefficient of expansion of TiNi film is higher than piezoelectric layer, therefore, the stress changes that depositional coating brings is favourable to whole driver.
Claims (3)
1. shape memory alloy enhancement piezo driver that is used for intelligence structure is characterized in that: it is by the piezoelectric layer (3) of piezoelectric ceramic, reducing zone (2) and the layer-stepping driving element with domes formed at the marmem film (1) of reducing zone (2) the surface plating of piezoelectric ceramic.
2. the shape memory alloy enhancement piezo driver that is used for intelligence structure according to claim 1 is characterized in that: the marmem thickness is 3～6 μ m, and the reducing zone of piezoelectric ceramic accounts for 1/5～2/5 of gross thickness.
3. manufacturing process steps that is used for the shape memory alloy enhancement piezo driver of intelligence structure is characterized in that:
1) stress state of each layer of employing analysis of finite element method driver;
2) determine marmem film, reducing zone, reducing zone thickness separately not according to mechanical analysis;
3) the piezoelectric ceramic basis material was reduced 40～60 minutes at 800 ℃～1000 ℃ following single faces;
4) reach after the recovery time piezoelectric ceramic to be taken out cooling at room temperature from high temperature;
5) piezoelectric ceramic that will cool off and have domes fully carries out ultrasonic waves for cleaning;
6) make the required frock clamp of plating mould;
7) show deposition 5 μ m marmem (TiNi) films with magnetically controlled sputter method at reducing zone;
8) sample is carried out subsequent annealing to the marmem film under condition of high vacuum degree;
9) at two end face coated with conductive of driver glue as electrode, and the polarization;
10) test its drive displacement and bearing capacity, and demarcate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200410065659.1A CN1632963A (en) | 2004-11-10 | 2004-11-10 | Shape memory alloy enhancement piezo-electric driver for intelligent structure and making technique steps |
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| CN200410065659.1A CN1632963A (en) | 2004-11-10 | 2004-11-10 | Shape memory alloy enhancement piezo-electric driver for intelligent structure and making technique steps |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104272481A (en) * | 2012-05-09 | 2015-01-07 | 高通股份有限公司 | Piezoelectric active cooling device |
| CN113043582A (en) * | 2019-12-26 | 2021-06-29 | 中国科学技术大学 | Method for improving piezoelectric response of polymer material |
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2004
- 2004-11-10 CN CN200410065659.1A patent/CN1632963A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104272481A (en) * | 2012-05-09 | 2015-01-07 | 高通股份有限公司 | Piezoelectric active cooling device |
| CN104272481B (en) * | 2012-05-09 | 2017-04-12 | 高通股份有限公司 | Piezoelectric active cooling device |
| CN113043582A (en) * | 2019-12-26 | 2021-06-29 | 中国科学技术大学 | Method for improving piezoelectric response of polymer material |
| CN113043582B (en) * | 2019-12-26 | 2023-03-31 | 中国科学技术大学 | Method for improving piezoelectric response of polymer material |
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