CN1632951A - Thin-film transistor array substrate and mending method thereof - Google Patents
Thin-film transistor array substrate and mending method thereof Download PDFInfo
- Publication number
- CN1632951A CN1632951A CN 200510003834 CN200510003834A CN1632951A CN 1632951 A CN1632951 A CN 1632951A CN 200510003834 CN200510003834 CN 200510003834 CN 200510003834 A CN200510003834 A CN 200510003834A CN 1632951 A CN1632951 A CN 1632951A
- Authority
- CN
- China
- Prior art keywords
- picture element
- film transistor
- thin
- element unit
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
It is a thin film transistor group base plate and its amending method, wherein the group comprises one base plate, multiple scanning lines, multiple material aligning lines, multiple sharing aligning lines and multiple picture element units. Each picture element unit comprises one thin film transistor, one picture element electrode, one upper electrode and one guide wire, wherein the picture element electrode is set on the relative sharing aligning lines top; the top electrode is set between the picture element electrode and its relative sharing aligning lines; the guide wire is set out of the sharing aligning lines and is coupled with the picture element electrode.
Description
Technical field
The invention relates to a kind of active assembly array base plate and method for repairing and mending thereof, and particularly relevant for a kind of plurality of groups of substrates of thin-film transistor and method for repairing and mending thereof.
Background technology
Thin Film Transistor-LCD (TFT LCD) is made of plurality of groups of substrates of thin-film transistor, colorized optical filtering multiple substrate and liquid crystal layer, wherein plurality of groups of substrates of thin-film transistor is the thin-film transistor of being arranged with array by a plurality of, and forms with the pixel electrode (pixel electrode) of the corresponding configuration of each thin-film transistor.Thin-film transistor is intended for the switch module of picture element unit, and in order to control other picture element unit, usually by choosing specific picture element unit with data wiring (date line) by the scan wiring (scan line) that couples with thin-film transistor, and it is granted suitable operating voltage, to show the video data of corresponding this picture element unit.
The many trend developments towards high brightness, high contrast, large tracts of land demonstration and wide viewing angle of existing LCD, wherein in order to improve the visual angle of LCD, existing multiple wide viewing angle technology is suggested.More common wide-angle liquid crystal display for example has multidomain vertical alignment type (Multi-Domain Vertical Alignment at present, MVA) LCD, copline change type (In-Plane Switching, IPS) LCD and fringe field change type (Fringe Field Switching, FFS) LCD or the like.With regard to multiple domain vertical orientation type liquid crystal display, it for example is to form a plurality of strip slits (slit) on pixel electrode, and on relative colorized optical filtering multiple substrate the configuration a plurality of strip thrusts (protrusion), to pass through collocation by slit and thrust, make liquid crystal molecule in the liquid crystal layer present and multidirectionally topple over, and reach the effect that wide viewing angle shows.
What deserves to be mentioned is; prior art is in order to promote the function of picture element unit for the storage and the maintenance of video data; the subregion of pixel electrode is covered on scan wiring or the shared wiring (common line); to form metal level-insulating barrier-indium tin oxide layer (Metal-Insulator-ITO; MII) storage capacitors of structure (storage capacitor, Cst).In addition, when making data wiring, source electrode and drain, more can be at configuration one top electrode between each pixel electrode and the corresponding shared wiring (or scan wiring), and with pixel electrode and top electrode electric connection, make top electrode, shared wiring (or scan wiring) and be positioned at top electrode and shared wiring (or scan wiring) between dielectric layer form the storage capacitors of a kind of metal-insulator-metal (Metal-Insulator-Metal is hereinafter to be referred as MIM) structure.
Please refer to Figure 1A and Figure 1B, wherein Figure 1A illustrates the local top view for the plurality of groups of substrates of thin-film transistor of a kind of MIM of having storage capacitors of prior art, and Figure 1B illustrates the A-A ' profile into Figure 1A.Shown in Figure 1A and 1B, the subregion of pixel electrode 150 is to be positioned at its pairing shared wiring 110 tops, and disposes a top electrode 130 between pixel electrode 150 and the corresponding shared wiring 110.In addition, dispose a dielectric layer 120 between top electrode 130 and the corresponding shared wiring 110 and keep electrically isolated, and also dispose a dielectric layer 140 between top electrode 130 and the corresponding pixel electrode 150, wherein dielectric layer 140 has a contact hole (contact hole) 142, so that top electrode 130 can see through this contact hole 142 and corresponding pixel electrode 150 electric connections.Thus, by just constituting MIM storage capacitors 102 by shared wiring 110, dielectric layer 120 and top electrode 130.
Yet, have now when making plurality of groups of substrates of thin-film transistor, often easily because of processing procedure defective (defect) or other factors, and the situation that storage capacitors lost efficacy takes place, make the picture element unit become a flaw picture element unit.Please respectively with reference to figure 2A～Fig. 4 A and Fig. 2 B～Fig. 4 B, wherein Fig. 2 A～Fig. 4 A illustrates the top view into existing multiple flaw picture element unit respectively, and Fig. 2 B～Fig. 4 B illustrates the A-A ' profile into Fig. 2 A～Fig. 4 A respectively.
Shown in Fig. 2 A and 2B, have some flaws 122 in the dielectric layer 120 between shared wiring 110 and the top electrode 130, it for example is because of processing procedure pollutes a formed particle (particle) or a hole, and this flaw 122 will cause taking place between top electrode 130 and the shared wiring 110 problem of capacitance leakage (leakage).In addition, shown in Fig. 3 A and Fig. 3 B, have now when making data distribution 160 with top electrode 130, may be between data wiring 160 and top electrode 130 conductive material 170 (as aluminium) of residual fraction, make pixel electrode 150 through top electrode 130 and mislead with data wiring 160.In addition, shown in Fig. 4 A and Fig. 4 B, have now when making pixel electrode 150, conductive material 180 also may take place between adjacent pixel electrode 150, and (as indium tin oxide, ITO) residual makes adjacent pixel electrode 150 mislead.Wherein, no matter above-mentioned which kind of situation can make that all the picture element unit can't normally show, thereby cause the display quality of LCD not good.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of plurality of groups of substrates of thin-film transistor exactly, in order to the problem of avoiding can't normally showing because of picture element unit that the processing procedure defective is caused, and then provides preferable process rate.
Another object of the present invention provides a kind of method for repairing and mending of plurality of groups of substrates of thin-film transistor, in order to the plurality of groups of substrates of thin-film transistor with flaw picture element unit is repaired, and then improves the process rate of plurality of groups of substrates of thin-film transistor.
Based on above-mentioned or other purpose, the present invention proposes a kind of plurality of groups of substrates of thin-film transistor, it comprises a substrate and is disposed at the plurality of scanning wirings on the substrate, many data distributions, many shared wiring and a plurality of picture elements unit, wherein scan wiring and data wiring are to mark off a plurality of picture elements zone on substrate, and the part of each shared wiring be positioned at picture element zone one of them.In addition, each picture element unit be positioned at picture element zone one of them, with by being driven by its pairing scan wiring and data wiring, and each picture element unit comprises a thin-film transistor, a pixel electrode, a top electrode and a lead.Wherein, thin-film transistor is to be coupled to its pairing scan wiring and data wiring, pixel electrode is the top that is disposed at its pairing shared wiring, and be coupled to thin-film transistor, top electrode is between pixel electrode and its pairing shared wiring, and an end of lead is a side that is connected in top electrode, and the other end of lead is to extend to outside the shared wiring, and is coupled to pixel electrode.
In a preferred embodiment of the present invention, above-mentioned plurality of groups of substrates of thin-film transistor for example more comprises a protective layer, and it is the cover film transistor, and is disposed between top electrode and the pixel electrode.In addition, each picture element unit for example more comprises a contact hole, and it is to be positioned at protective layer, and these contact holes are to be connected between its pairing lead and the pixel electrode.In addition, each lead for example comprises a bridge part and a contact site, and wherein contact site is to be connected to its pairing contact hole, and bridge part is to be connected between contact site and its pairing top electrode.
In one of the present invention preferred embodiment, each above-mentioned top electrode for example comprises one first sub-top electrode, one second sub-top electrode and a junction, wherein an end of lead is a side that is connected in the first sub-top electrode, and connecting portion is to be connected between its pairing first sub-top electrode and the second sub-top electrode.In addition, for example have one first opening and one second opening on the position corresponding to each the first sub-top electrode and the second sub-top electrode of pixel electrode.In addition, also for example can have one the 3rd opening on the position corresponding to the connecting portion of each top electrode of shared wiring.
In a preferred embodiment of the present invention, above-mentioned pixel electrode corresponding to for example having one the 4th opening on the position of each lead.
The present invention proposes a kind of method for repairing and mending of plurality of groups of substrates of thin-film transistor in addition, and it is suitable for above-mentioned plurality of groups of substrates of thin-film transistor is repaired.Wherein, when top electrode one of them and shared wiring have particle and/or hole between one of them, and make when its pairing picture element unit becomes a flaw picture element unit, this method for repairing and mending comprises the part lead that removes flaw picture element unit, so that the top electrode and the pixel electrode of flaw picture element unit are electrically insulated.
In a preferred embodiment of the present invention, the method for repairing and mending of above-mentioned plurality of groups of substrates of thin-film transistor more was included in one the 4th opening that forms on the pixel electrode of flaw picture element unit corresponding to lead before the part lead that removes flaw picture element unit.This 4th opening is when avoiding removing lead, pixel electrode and lead short circuit.In addition, the method that removes the part lead of flaw picture element unit for example is that laser removes.
In a preferred embodiment of the present invention, the method for repairing and mending of above-mentioned plurality of groups of substrates of thin-film transistor more comprises the top electrode and its pairing shared wiring welding mutually with flaw picture element unit.In addition, with the top electrode of flaw picture element unit and its pairing shared wiring mutually before the welding, more be included in one second opening that forms on the pixel electrode of flaw picture element unit corresponding to weld, this second or first opening mainly is to avoid top electrode, shared wiring and pixel electrode short circuit.In addition, with the top electrode of flaw picture element unit and its pairing shared wiring mutually the method for welding for example be laser welding.
The present invention proposes a kind of method for repairing and mending of plurality of groups of substrates of thin-film transistor again, and it is suitable for above-mentioned plurality of groups of substrates of thin-film transistor with the first sub-top electrode and second sub-top electrode is repaired.Wherein, when the first sub-top electrode one of them and data wiring have a conduction residue between one of them, and make when its pairing picture element unit becomes a flaw picture element unit, this method for repairing and mending comprises the part connecting portion of the top electrode that removes flaw picture element unit, so that the first sub-top electrode of flaw picture element unit and the second sub-top electrode are electrically insulated.And, remove the part lead of flaw picture element unit, so that the first sub-top electrode and the pixel electrode of flaw picture element unit are electrically insulated.In addition, with the second sub-top electrode and its pairing shared wiring welding mutually of flaw picture element unit, make this second sub-top electrode with its form the storage capacitors of a MII structure between the corresponding pixel electrode, and make this flaw picture element unit can recover normal operation.
In a preferred embodiment of the present invention, the method for repairing and mending of above-mentioned plurality of groups of substrates of thin-film transistor for example more was included in shared one the 3rd opening that fits over line formation corresponding to connecting portion of flaw picture element unit before the part connecting portion of the top electrode that removes flaw picture element unit.This 3rd opening is when avoiding removing connecting portion, top electrode and shared wiring short circuit.In addition, before removing this lead of part of this flaw picture element unit, for example more be included in one the 4th opening that forms on the pixel electrode of flaw picture element unit corresponding to lead.In addition, with the second sub-top electrode of flaw picture element unit and its pairing shared wiring mutually before the welding, for example more be included in one first or two openings that form on the pixel electrode of flaw picture element unit corresponding to weld.
In a preferred embodiment of the present invention, the method for the above-mentioned part lead that removes flaw picture element unit or the part connecting portion of top electrode for example is that laser removes.In addition, with the second sub-top electrode of flaw picture element unit and its pairing shared wiring mutually the method for welding for example be laser welding.
The present invention more proposes a kind of method for repairing and mending of plurality of groups of substrates of thin-film transistor, and it is suitable for above-mentioned plurality of groups of substrates of thin-film transistor with the first sub-top electrode and second sub-top electrode is repaired.Wherein, when the second sub-top electrode one of them and data wiring have a conduction residue between one of them, and make when its pairing picture element unit becomes a flaw picture element unit, method for repairing and mending comprises the part connecting portion of the top electrode that removes flaw picture element unit, so that the second sub-top electrode of flaw picture element unit and the first sub-top electrode are electrically insulated.
In a preferred embodiment of the present invention, the method for repairing and mending of above-mentioned plurality of groups of substrates of thin-film transistor more was included in a shared opening that fits over line formation corresponding to connecting portion of flaw picture element unit before the part connecting portion of the top electrode that removes flaw picture element unit.In addition, the method that removes the part connecting portion of top electrode for example is that laser removes.
The present invention more proposes a kind of method for repairing and mending of plurality of groups of substrates of thin-film transistor, and it is suitable for above-mentioned plurality of groups of substrates of thin-film transistor is repaired.Wherein, when having a conduction residue between the two adjacent pixel electrodes or between pixel electrode one of them and its pairing shared wiring, having particle and/or hole, and make its pairing picture element unit one of them when becoming a flaw picture element unit, this method for repairing and mending comprises the part pixel electrode that removes flaw picture element unit, so that the pixel electrode of conduction residue and remainder is electrically insulated.
In the method for repairing and mending of above-mentioned plurality of groups of substrates of thin-film transistor, each pixel electrode for example has at least one slit, and each slit is the top that is across its pairing top electrode, and by by this pixel electrode of part of this flaw picture element unit that is removed with and pairing this slit, can make this conduction residue and this lead be electrically insulated.In addition, the method that removes the part pixel electrode of flaw picture element unit for example is that laser removes.
Because after carrying out above-mentioned method for repairing and mending, may cause the variation of the storage capacitors value of flaw picture element unit, cause its feed-trough voltage (feed through voltage) to be different from and other normal picture element unit, and influence display quality.Therefore, in plurality of groups of substrates of thin-film transistor of the present invention, each thin-film transistor for example comprises a gate, a channel layer, one source pole/drain and an extension electrode, and wherein gate is to be coupled to its pairing distribution that scans, and channel layer is to be disposed on the gate.In addition, source/drain is to be disposed on the channel layer of gate top, and be coupled to its pairing data wiring and pixel electrode respectively, and extension electrode is a side that is coupled to source/drain, and extension electrode is to extend to its pairing top that scans distribution, with scan distribution and form a parasitic capacitance (parasitic capacitor).Thus, when flaw picture element unit is repaired, for example more comprise at least partly extension electrode that removes in this flaw picture element unit, change the size that scans the parasitic capacitance value between distribution and extension electrode, by the variation of the storage capacitors value that causes because of repairing with compensation.
Based on above-mentioned, plurality of groups of substrates of thin-film transistor of the present invention and method for repairing and mending thereof are by the designs such as connecting portion by lead and top electrode, reach the purpose that the flaw picture element unit of different kenels is repaired, show so that this flaw picture element unit recovers normal.Therefore, by can effectively improving the problem that the picture element unit that caused because of the processing procedure defective can't normally show by plurality of groups of substrates of thin-film transistor of the present invention and method for repairing and mending thereof, and then improve process rate.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Figure 1A illustrates the local top view for the plurality of groups of substrates of thin-film transistor of the existing a kind of MIM of having storage capacitors;
Figure 1B illustrates the A-A ' profile into Figure 1A;
Fig. 2 A～4A illustrates the local top view into the MIM storage capacitors of existing multiple inefficacy respectively;
Fig. 2 B～4B illustrates the A-A ' profile into Fig. 2 A～4A respectively;
Fig. 5 A illustrates the local top view into the plurality of groups of substrates of thin-film transistor of the display panels of a kind of multiregional vertical align of the present invention;
Fig. 5 B illustrates the B-B ' profile into Fig. 5 A;
Fig. 6 A illustrates the local top view that has the plurality of groups of substrates of thin-film transistor of flaw electric capacity for a kind of;
Fig. 6 B illustrates the B-B ' profile into Fig. 6 A;
Fig. 7 A illustrates the local top view that has the plurality of groups of substrates of thin-film transistor of flaw electric capacity for a kind of;
Fig. 7 B illustrates the B-B ' profile into Fig. 7 A;
Fig. 8 A illustrates the local top view that has the plurality of groups of substrates of thin-film transistor of flaw electric capacity for a kind of;
Fig. 8 B illustrates the B-B ' profile into Fig. 8 A;
Fig. 9 A illustrates the local top view that has the plurality of groups of substrates of thin-film transistor of flaw electric capacity for a kind of;
Fig. 9 B illustrates the A-A ' profile into Fig. 9 A;
Figure 10 A illustrates the local top view that has the plurality of groups of substrates of thin-film transistor of flaw electric capacity for a kind of;
Figure 10 B illustrates the A-A ' profile into Figure 10 A;
It is the driving voltage waveform figure of a Thin Film Transistor-LCD that Figure 11 illustrates;
Figure 12 illustrates the schematic diagram into a kind of plurality of groups of substrates of thin-film transistor of the present invention.
Embodiment
Please refer to Fig. 5 A and 5B, wherein Fig. 5 A illustrates the local top view into a kind of plurality of groups of substrates of thin-film transistor of the present invention, and Fig. 5 B illustrates the B-B ' profile into Fig. 5 A, and wherein this plurality of groups of substrates of thin-film transistor for example is applicable to a multiregional vertical align formula display panels.Shown in Fig. 5 A and 5B, substrate 500 for example is a glass substrate, for example disposes plurality of scanning wirings 502 and many data distributions 504 on it, is used to mark off on the substrate 500 a plurality of picture elements zone 500a.In addition, more dispose many shared wiring 506 on the substrate 500, it for example is to form simultaneously with scan wiring 502, and its material for example comprises chromium (Cr) or aluminium conductivity good metal such as (Al), and each shared wiring 506 is to be positioned at its pairing picture element zone 500a.
Refer again to Fig. 5 A and Fig. 5 B, for example dispose a picture element unit 510 in each picture element zone 500a, and each picture element unit 510 comprises a thin-film transistor 512, a top electrode 514, a pixel electrode 516 and a lead 518.Wherein, thin-film transistor 512 is to be coupled to its pairing scan wiring 502 and data wiring 504, with by being driven by scan wiring 502 and data wiring 504.In addition, top electrode 514 is to be disposed at shared wiring 506 tops, and this top electrode 514 for example is to form simultaneously with data wiring 504, and its material for example comprises chromium (Cr) or aluminium conductivity good metal such as (Al).In one embodiment, each top electrode 514 for example comprises one first sub-top electrode 514a and one second sub-top electrode 514b, and the junction of each first sub-top electrode 514a pairing with it second sub-top electrode 514b for example has a junction 514c.In addition, for example dispose a dielectric layer 522 between top electrode 514 and the shared wiring 506, its material for example is silicon nitride (SiNx).
Refer again to Fig. 5 A and Fig. 5 B, lead 518 is to be disposed at one of top electrode 514 side, it for example is to form simultaneously with data wiring 504, and a junction of lead 518 is the lateral margin that is connected in the first sub-top electrode 514a, and extends to the zone beyond the shared wiring 506.In addition; pixel electrode 516 is to be disposed at top electrode 514 tops; has a dielectric layer 524 (for example being protective layer) therebetween; and pixel electrode 516 is by be coupled to a contact site of lead 518 by contact hole 524a one of in the dielectric layer 524, to form the storage capacitors 530 of a mim structure between top electrode 514 and its pairing shared wiring 506.In addition, for example have a plurality of slits 528 on the pixel electrode 516, it for example is to be continuous bending (zigzag), and the both sides of the edge of each slit 528 for example have outward extending a plurality of sub-slit 528a, and makes the edge indentation (jag profile) of each slit 528.Wherein, the material of pixel electrode 516 for example is indium tin oxide (Indium-Tin-Oxide, transparent conductive material such as ITO), and by the effect by slit 518, can change the suffered direction of an electric field of liquid crystal molecule (not illustrating) of pixel electrode 516 tops, so that the vertical orientation of multizone to be provided, and then reach wide-visual angle effect.
What deserves to be mentioned is that in one embodiment of this invention, lead 518 is for example between adjacent two slits 528, and the bearing of trend of lead 518 is parallel with slit 528.Thus, lead 518 plurality of groups of substrates of thin-film transistor and colored optical filtering substrates (not illustrating) group upright after, can correspondence be positioned at the below of the strip projected parts thing (not illustrating) on the colored optical filtering substrates (not illustrating), so can't cause limit the original aperture opening ratio of display panels (not illustrating).In addition, in plurality of groups of substrates of thin-film transistor of the present invention, can form a plurality of openings in addition on the pixel electrode 516, in order to the carrying out of follow-up repairing action.For example, for example can be formed with an opening 516a on the lead 518 pairing pixel electrodes 516, and for example be formed with opening 516b and 516c on the first sub-top electrode 514a and the pairing pixel electrode 516 of the second sub-top electrode 514b respectively, and for example be formed with opening 506a on the pairing shared wiring 506 of connecting portion 514c, wherein the effect about these openings 516a, 516b, 516c and 506a will describe in detail in method for repairing and mending hereinafter.
Hereinafter will illustrate and be applied in the above-mentioned plurality of groups of substrates of thin-film transistor, in order to the method that flaw picture element unit is repaired.
Please refer to Fig. 6 A and Fig. 6 B, wherein Fig. 6 A illustrates the local top view that has the plurality of groups of substrates of thin-film transistor of flaw picture element unit for a kind of, and Fig. 6 B illustrates the B-B ' profile into Fig. 6 A.Shown in Fig. 6 A and Fig. 6 B; some flaws 542 are in the dielectric layer 522 between top electrode 514 and shared wiring 506; wherein this flaw 542 for example is to pollute a particle or the hole of one of forming because of processing procedure; and this flaw 542 will cause taking place between the first top electrode 514a and the shared wiring 506 problem of capacitance leakage, cause 510 inefficacies of picture element unit and become flaw picture element unit.
Refer again to Fig. 6 A and Fig. 6 B, method for repairing and mending of the present invention for example is by removed the lead 518 of part by laser, so that pixel electrode 516 is electrically insulated with top electrode 514.Wherein, the part lead 518 that is removed for example can corresponding be positioned at the opening 516a of pixel electrode 516, directly pixel electrode 516 processing is caused producing misleading with lead 518 after pixel electrode 516 meltings to avoid laser.In addition, the present invention more for example can with the storage capacitors 532 of formation one MII structure between top electrode 514 and pixel electrode 516, and make picture element unit 510 can recover normal effect the welding mutually of the pairing shared wiring 506 of top electrode 514 and its.Wherein, with top electrode 514 and shared wiring 506 mutually the method for welding for example be laser welding, and weld for example can be positioned at the opening 516b or the 516c of pixel electrode 516, to avoid laser, make pixel electrode 516 produce misleading with top electrode 514 mutual weldings directly to pixel electrode 516 processing.What deserves to be mentioned is, the above-mentioned lead 518 that removes part and with top electrode 514 and shared wiring 506 mutually step such as welding there is no specific sequencing.In other words, method for repairing and mending of the present invention also can select elder generation with top electrode 514 and shared wiring 506 welding mutually, removes the lead 518 of part again.
Please refer to Fig. 7 A and Fig. 7 B, wherein Fig. 7 A illustrates the local top view that has the plurality of groups of substrates of thin-film transistor of flaw electric capacity for another kind, and Fig. 7 B illustrates the B-B ' profile into Fig. 7 A.Shown in Fig. 7 A and 7B, for example has a conduction residue 544 between the first sub-top electrode 514a and the data wiring 504, wherein the first sub-top electrode 514a sees through conduction residue 544 and misleads with data wiring 504, make picture element unit 510 be subjected to the display signal on the data wiring 504 influence and can't normal operation.Generally speaking, this conduction residue 544 for example is when making top electrode 514 with data distribution 504, because of etching not exclusively or other fabrication errors residual aluminium or other conductive material.
Refer again to Fig. 7 A and 7B, method for repairing and mending of the present invention is by removed the lead 518 of part by laser, so that the pixel electrode 516 and the first sub-top electrode 514 are electrically insulated.Wherein, the part lead 518 that is removed can corresponding be positioned at the opening 516a of pixel electrode 516 equally, produces misleading with lead 518 mutual weldings to avoid pixel electrode 516.In addition, method for repairing and mending of the present invention is also by removed the connecting portion 514c of top electrode 514 partly by laser, so that the first sub-top electrode 514a and the second sub-top electrode 514b are electrically insulated.Wherein, can be pre-formed opening 506a equally on the shared wiring 506, when avoiding removing part connecting portion 514c, shared wiring 506 produces misleading with top electrode 514 mutual weldings.In addition, method for repairing and mending of the present invention is also with the second sub-top electrode 514b and its pairing shared wiring 506 welding mutually, with the storage capacitors 534 of formation one MII structure between the second sub-top electrode 514b and pixel electrode 516, and make picture element unit 510 can recover normal effect.Wherein, with the second sub-top electrode 514b and shared wiring 506 mutually the method for welding for example be laser welding, and weld for example can be positioned at the opening 516c of pixel electrode 516, to avoid laser, make the pixel electrode 516 and the second sub-top electrode 514 mutual weldings and produce misleading directly to pixel electrode 516 processing.What deserves to be mentioned is, the above-mentioned lead 518 that removes part, remove part top electrode 514 connecting portion 514c and with top electrode 514 and shared wiring 506 mutually step such as welding also do not have specific order, in other embodiments, determine the sequencing of above-mentioned steps when visual actual demand.
Please refer to Fig. 8 A and 8B, wherein Fig. 8 A illustrates the local top view that has the plurality of groups of substrates of thin-film transistor of flaw electric capacity for another, and Fig. 8 B illustrates the B-B ' profile into Fig. 8 A.Shown in Fig. 8 A and 8B, for example has a conduction residue 546 between the second sub-top electrode 514b and the data wiring 504, wherein the second sub-top electrode 514b sees through conduction residue 544 and misleads with data wiring 504, make picture element unit 510 be subjected to the display signal on the data wiring 504 influence and can't normal operation.This conduction residue 546 for example is when making top electrode 514 with data distribution 504, because of etching not exclusively or other fabrication errors residual aluminium or other conductive material.
Refer again to Fig. 8 A and 8B, method for repairing and mending of the present invention is the connecting portion 514c by the top electrode 514 that is removed part by laser, so that the first sub-top electrode 514a and the second sub-top electrode 514b are electrically insulated, wherein preformed opening 506a helps when removing part connecting portion 514c on the shared wiring 506, avoids shared wiring 506 to produce misleading with top electrode 514 mutual weldings.Thus, still can form the storage capacitors 536 of mim structure, and make picture element unit 510 recover normal effect by the first sub-top electrode 514a, dielectric layer 522 and shared wiring 506.
Please refer to Fig. 9 A and 9B, wherein Fig. 9 A illustrates the local top view that has the plurality of groups of substrates of thin-film transistor of flaw electric capacity for another, and Fig. 9 B illustrates the A-A ' profile into Fig. 9 A.Shown in Fig. 9 A and 9B, for example have a conduction residue 548 between the pixel electrode 516 of adjacent two picture element unit 510, mislead and make two pixel electrodes 516 see through conduction residue 548.Generally speaking, the method of making pixel electrode 516 is for example earlier by by sputter (sputtering) or steaming film build methods such as (coevaporation) altogether after forming transparent conductive film (not illustrating) on the substrate 500, again this transparent conductive film (not illustrating) is carried out little shadow (photographing), etching steps such as (etching), with the pixel electrode 516 that obtains this patterning.Therefore, if incomplete, just may form above-mentioned conduction residue 548 to the etching of conductive film (not illustrating).
Refer again to Fig. 9 A and 9B, method for repairing and mending of the present invention is by being removed the pixel electrode 516 of part by laser, so that conduction residue 548 separates with lead 518, and allowing the adjacent two picture element unit 510 that originally misleaded be electrically insulated.Wherein, the zone that removes more may extend on the conduction residue 548 between data wiring 504 and the pixel electrode 516, separates fully with the pixel electrode 516 of remainder to guarantee to conduct electricity residue 548.What deserves to be mentioned is, owing to have slit 528 on the pixel electrode 516 of present embodiment, and slit 528 is the tops that are across its pairing top electrode 514.Therefore, only need remove the part pixel electrode 516 that is positioned at top electrode 514 both sides, and make and remove the zone and extend to slit 528, just effectively separated wires 518 with conduct electricity residue 548.
Please refer to Figure 10 A and 10B, wherein Figure 10 A illustrates the local top view that has the plurality of groups of substrates of thin-film transistor of flaw electric capacity for another kind, and Figure 10 B illustrates the A-A ' profile into Figure 10 A.Shown in Figure 10 A and 10B; some flaws 550 are between pixel electrode 516 and shared wiring 506; and be positioned at dielectric layer 522 and dielectric layer 524; wherein this flaw 550 for example is to pollute a particle or the hole of one of forming because of processing procedure; and this flaw 550 will cause taking place between pixel electrode 516 and the shared wiring 506 problem of capacitance leakage, thereby cause picture element unit 510 normally to show.
Refer again to Figure 10 A and 10B, method for repairing and mending of the present invention is by being removed the pixel electrode 516 of part by laser, invocation point flaw 550 being separated, to avoid the capacitance leakage between pixel electrode 516 and the shared wiring 506 with lead 518 equally.Wherein, by by the slit on the pixel electrode 516 528, when removing part pixel electrode 516, same need remove the part pixel electrode 516 that is positioned at top electrode 514 both sides, and make and remove the zone and extend to slit 528, just effectively separated wires 518 and some flaw 550.
What deserves to be mentioned is; in the above-mentioned method for repairing and mending of the present invention; be no lack of and remove partly sub-top electrode or steps such as pixel electrode partly; wherein these steps may cause the variation of the storage capacitors value of flaw picture element unit; cause its feed-trough voltage (feed through voltage) to be different from and other normal picture element unit, and influence display quality.
In more detail, please refer to Figure 11, it illustrates the driving voltage waveform figure of a Thin Film Transistor-LCD.In the T1, thin-film transistor can be opened during writing, and liquid crystal capacitance CLC and the storage capacitors Cst in the picture element unit can charge to a magnitude of voltage Vp at this moment.Then, in the T2, thin-film transistor can cut out during keeping, the pressure drop that just can produce a feed-trough voltage (feedthrough voltage) Vft this moment.Generally speaking, this feed-trough voltage Vft=(Vgh-Vgl) Cgd/ (CLC+Cst), wherein Vgh is the gate voltage that thin-film transistor is in opening, and Vgl is the gate voltage that thin-film transistor is in closed condition.
Hold above-mentionedly,,, will cause the increase (as shown in phantom in Figure 11) of feed-trough voltage Vft therefore according to above-mentioned formula because method for repairing and mending of the present invention may cause the change of the storage capacitors value of flaw picture element unit.In such cases, can make flaw picture element unit different with the demonstration GTG of other normal picture element unit, for example under the picture of dark attitude, produce the problem of bright spot.
In view of this, the present invention more proposes the design of another kind of plurality of groups of substrates of thin-film transistor.Please refer to Figure 12, it illustrates the schematic diagram into a kind of plurality of groups of substrates of thin-film transistor of the present invention, wherein is simplicity of illustration, and Figure 12 only draws the part assembly, about other detailed structure and variation, please refer to the explanation of the foregoing description.As shown in figure 12, thin-film transistor 1210 for example comprises a gate 1212, a channel layer 1214, one source pole/drain 1216 and an extension electrode 1218.Wherein, gate 1212 is to be coupled to scan distribution 1220, and channel layer 1214 is to be disposed on the gate 1212.In addition, source/drain 1216 is to be disposed on the channel layer 1214 of gate 1212 tops, and is coupled to its pairing data wiring 1230 and pixel electrode 1240 respectively.In addition, extension electrode 1218 for example is to be the structure with one deck with source/drain 1216, and it for example is to form simultaneously with source/drain 1216.Extension electrode 1218 is sides that are coupled to source/drain 1216, and extends to its pairing top that scans distribution 1220, with scan distribution 1220 and form parasitic capacitances (parasitic capacitor).
Thus, when flaw picture element unit is repaired, if relate to the situation that changes the storage capacitors value, at least partly extension electrode 1218 in then removable this flaw picture element unit.For example, the part that is connected of for example removable extension electrode 1218 and source/drain 1216 or directly remove the part that scans distribution 1220 tops or whole extension electrodes 1218, change the size of the parasitic capacitance value that scans 1218 of distribution 1220 and extension electrodes, by the variation of the storage capacitors value that causes because of repairing with compensation.
Plurality of groups of substrates of thin-film transistor of the present invention and method for repairing and mending thereof are to can be applicable in the display panels of a multiregional vertical align, cooperate wherein that original slit comes pixel electrode is cut on the pixel electrode, so that corresponding to the part pixel electrode of flaw electric capacity can be really and lead be electrically insulated, and keep the normal demonstration of this picture element unit.Certainly, plurality of groups of substrates of thin-film transistor of the present invention and method for repairing and mending thereof are not only applicable on the LCD of multiregional vertical align, in other embodiments of the invention, it more for example can be stable twisted nematic (Twisted Nematic, TN) or STN Super TN type (Super Twisted Nematic, STN) wait the display panels of other type, even and do not have slit on the pixel electrode of plurality of groups of substrates of thin-film transistor, method for repairing and mending of the present invention still can be by by changing the purpose that cutting path reaches isolated flaw electric capacity.
In addition, the foregoing description and diagram thereof only are for example usefulness, and the position, quantity etc. of wherein for example putting flaw or conduction residue are when different with practical situation, and the factor that forms flaw electric capacity also is not limited to above-mentioned some flaw or conduction residue.In addition, though each top electrode that the foregoing description illustrated only comprises one first sub-top electrode and one second sub-top electrode, but in not breaking away from spiritual scope of the present invention, have the knack of quantity, shape or position that this skill person more can change top electrode according to actual state and design requirement, and connecting portion also is an optionally design, and its effect is to reduce man-hour and the cost that laser removes required cost.
In sum, plurality of groups of substrates of thin-film transistor of the present invention and method for repairing and mending thereof have following feature and advantage at least:
(1) by moving to outside the top electrode by the link position (contact hole) of a lead with top electrode and pixel electrode, the lead that wherein only need remove part just can make top electrode and pixel electrode be electrically insulated, therefore help to simplify to repair action, and can improve the yield of repairing.
When (two) being applied to the display panels of multiregional vertical align, lead can corresponding be disposed at the below of the strip projected parts thing on the colored optical filtering substrates, therefore can the aperture opening ratio of display panels not impacted.
When (three) being applied to the display panels of multiregional vertical align, original slit is repaired on the pixel electrode of can arranging in pairs or groups, and therefore can dwindle working (finishing) area, and then reduce the required man-hour of expending.
(4) original slit is repaired on the collocation pixel electrode, and does not need the pixel electrode of metal level (as shared wiring or top electrode etc.) top is processed, and therefore can avoid the metal level of below is caused damage, and then improve the yield of repairing.
(5) lead, top electrode are to form simultaneously with data wiring (and source/drain of thin-film transistor), therefore need not increase extra fabrication steps, and can not cause the burden on the cost.
(6) can when making pixel electrode, form a plurality of openings, miss welding, and laser welding when helping repairing and laser such as remove at the carrying out of step with lead or the top electrode of avoiding pixel electrode and below corresponding to lead, top electrode.
(7) can scan between distribution and the source/drain design one parasitic capacitance, the difference of the feed-trough voltage that may cause after repairing in order to compensation, and then guarantee the quality that shows.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (34)
1. a plurality of groups of substrates of thin-film transistor is characterized in that, comprising:
One substrate;
A plurality of scan wirings are disposed on this substrate;
A plurality of data wirings are disposed on this substrate, and this data wiring and this scan wiring are to mark off a plurality of picture elements zone on this substrate;
A plurality of shared wiring are disposed on this substrate, and the part of each this shared wiring be positioned at this picture element zone one of them;
A plurality of picture elements unit, be disposed on this substrate, and each this picture element unit be positioned at this picture element zone one of them, with by one of them drives by its pairing this scan wiring one of them and this data wiring, wherein each this picture element unit comprises:
One thin-film transistor is to be coupled to its pairing this scan wiring and this data wiring;
One pixel electrode is disposed at the top of its pairing this shared wiring, and is coupled to this thin-film transistor;
One top electrode is between this pixel electrode and its pairing this shared wiring;
And
One lead, one of this lead end are to be connected in one of this top electrode side, and the other end of this lead is to extend to outside this shared wiring, and are coupled to this pixel electrode.
2. plurality of groups of substrates of thin-film transistor as claimed in claim 1 is characterized in that, more comprises a protective layer, and it is to cover this thin-film transistor, and is disposed between this top electrode and this pixel electrode.
3. plurality of groups of substrates of thin-film transistor as claimed in claim 2 is characterized in that, each this picture element unit more comprises a contact hole, and this contact hole is to be positioned at this protective layer, and is connected between its pairing this lead and this pixel electrode.
4. plurality of groups of substrates of thin-film transistor as claimed in claim 3, it is characterized in that, each this lead comprises a bridge part and a contact site, and wherein this contact site is to be connected to its pairing this contact hole, and this bridge part is to be connected between this contact site and its pairing this top electrode.
5. plurality of groups of substrates of thin-film transistor as claimed in claim 1 is characterized in that, each this top electrode comprises:
One first sub-top electrode, one of them a end of this lead is a side that is connected in this first sub-top electrode;
One second sub-top electrode; And
A junction, it is to be connected between this first sub-top electrode and this second sub-top electrode.
6. plurality of groups of substrates of thin-film transistor as claimed in claim 5 is characterized in that, described this pixel electrode has one first opening on the position corresponding to each this first sub-top electrode.
7. plurality of groups of substrates of thin-film transistor as claimed in claim 5 is characterized in that, described this pixel electrode has one second opening on the position corresponding to each this second sub-top electrode.
8. plurality of groups of substrates of thin-film transistor as claimed in claim 5 is characterized in that, described this shared wiring has one the 3rd opening on the position corresponding to each this connecting portion.
9. plurality of groups of substrates of thin-film transistor as claimed in claim 1 is characterized in that, described this pixel electrode has one the 4th opening on the position corresponding to each this lead.
10. plurality of groups of substrates of thin-film transistor as claimed in claim 1 is characterized in that, described each this pixel electrode has at least one slit.
11. plurality of groups of substrates of thin-film transistor as claimed in claim 10 is characterized in that, the edge of described each this slit is an indentation.
12. plurality of groups of substrates of thin-film transistor as claimed in claim 10 is characterized in that, described each this lead is between two adjacent slits, and the bearing of trend of each this lead is that this slit of being adjacent is parallel.
13. plurality of groups of substrates of thin-film transistor as claimed in claim 1 is characterized in that, described each this thin-film transistor comprises:
One gate is coupled to its pairing this and scans distribution;
One channel layer is disposed on this gate;
One source pole/drain is disposed on this channel layer of this gate top, and is coupled to its pairing this data wiring and this pixel electrode respectively; And
One extension electrode is coupled to a side of this source/drain, and this extension electrode is to extend to its pairing this to scan the top of distribution, forms a parasitic capacitance to scan distribution with this.
14. the method for repairing and mending of a plurality of groups of substrates of thin-film transistor, be suitable for the described plurality of groups of substrates of thin-film transistor of claim 1 is repaired, it is characterized in that, when this top electrode one of them and this shared wiring have particle and/or hole between one of them, and make when its pairing this picture element unit becomes a flaw picture element unit that this method for repairing and mending comprises:
Remove this lead of part of this flaw picture element unit, so that this top electrode of this flaw picture element unit and this pixel electrode are electrically insulated; And
This top electrode and its pairing this shared wiring welding mutually with this flaw picture element unit.
15. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 14, it is characterized in that, before removing this lead of part of this flaw picture element unit, more be included in one first opening that forms on this pixel electrode of this flaw picture element unit corresponding to this lead.
16. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 14 is characterized in that, the described method that removes this lead of part of this flaw picture element unit comprises that laser removes.
17. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 14, it is characterized in that, with this top electrode of this flaw picture element unit and its pairing this shared wiring mutually before the welding, more be included in one second opening that forms on this pixel electrode of this flaw picture element unit corresponding to weld.
18. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 14 is characterized in that, with pairing this shared wiring of this top electrode and its of this flaw picture element unit mutually the method for welding comprise laser welding.
19. the method for repairing and mending of a plurality of groups of substrates of thin-film transistor, be suitable for the described plurality of groups of substrates of thin-film transistor of claim 5 is repaired, it is characterized in that, when this first sub-top electrode one of them and this data wiring have a conduction residue between one of them, and make when its pairing this picture element unit becomes a flaw picture element unit that this method for repairing and mending comprises:
Remove this connecting portion of part of this top electrode of this flaw picture element unit, so that this first sub-top electrode of this flaw picture element unit and this second sub-top electrode are electrically insulated;
Remove this lead of part of this flaw picture element unit, so that this first sub-top electrode and this pixel electrode of this flaw picture element unit are electrically insulated; And
This second sub-top electrode and its pairing this shared wiring welding mutually with this flaw picture element unit.
20. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 19, it is characterized in that, before this connecting portion of part of this top electrode that removes this flaw picture element unit, more be included in should sharing of this flaw picture element unit and fit over one three opening of line formation corresponding to this connecting portion.
21. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 19, it is characterized in that, before removing this lead of part of this flaw picture element unit, more be included in one the 4th opening that forms on this pixel electrode of this flaw picture element unit corresponding to this lead.
22. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 19, it is characterized in that, with this second sub-top electrode of this flaw picture element unit and its pairing this shared wiring mutually before the welding, more be included in one second opening that forms on this pixel electrode of this flaw picture element unit corresponding to weld.
23. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 19 is characterized in that, the method for this connecting portion of part of described this top electrode that removes this flaw picture element unit comprises that laser removes.
24. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 19 is characterized in that, the described method that removes this lead of part of this flaw picture element unit comprises that laser removes.
25. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 19 is characterized in that, with this second sub-top electrode of this flaw picture element unit and its pairing this shared wiring mutually the method for welding comprise laser welding.
26. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 19 is characterized in that, described each this thin-film transistor comprises a gate, is coupled to its pairing this and scans distribution; One channel layer is disposed on this gate; One source pole/drain is disposed on this channel layer of this gate top, and is coupled to its pairing this data wiring and this pixel electrode respectively; And an extension electrode is coupled to a side of this source/drain, and this extension electrode is to extend to its pairing this to scan the top of distribution, forms a parasitic capacitance to scan distribution with this, and this method for repairing and mending more comprises:
Remove at least partly this extension electrode in this flaw picture element unit, to change the size of this parasitic capacitance value.
27. the method for repairing and mending of a plurality of groups of substrates of thin-film transistor, be suitable for the described plurality of groups of substrates of thin-film transistor of claim 5 is repaired, it is characterized in that, when this second sub-top electrode one of them and this data wiring have a conduction residue between one of them, and make when its pairing this picture element unit becomes a flaw picture element unit that this method for repairing and mending comprises:
Remove this connecting portion of part of this top electrode of this flaw picture element unit, so that this second sub-top electrode of this flaw picture element unit and this first sub-top electrode are electrically insulated.
28. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 27, it is characterized in that, before this connecting portion of part of this top electrode that removes this flaw picture element unit, more be included in should sharing of this flaw picture element unit and fitted over line and form corresponding to one of this connecting portion opening.
29. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 27 is characterized in that, the method for this connecting portion of part of described this top electrode that removes this flaw picture element unit comprises that laser removes.
30. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 27 is characterized in that, described each thin-film transistor comprises a gate, is coupled to its pairing this and scans distribution; One channel layer is disposed on this gate; One source pole/drain is disposed on this channel layer of this gate top, and is coupled to its pairing this data wiring and this pixel electrode respectively; And an extension electrode is coupled to a side of this source/drain, and this extension electrode is to extend to its pairing this to scan the top of distribution, forms a parasitic capacitance to scan distribution with this, and this method for repairing and mending more comprises:
Remove at least partly this extension electrode in this flaw picture element unit, to change the size of this parasitic capacitance value.
31. the method for repairing and mending of a plurality of groups of substrates of thin-film transistor, be suitable for the described plurality of groups of substrates of thin-film transistor of claim 1 is repaired, it is characterized in that, maybe between this pixel electrode one of them and its pairing this shared wiring, have particle and/or hole when having a conduction residue between the two adjacent pixel electrodes, and make when its pairing this picture element unit becomes a flaw picture element unit that this method for repairing and mending comprises:
Remove this pixel electrode of part of this flaw picture element unit, so that this conduction residue and this lead are electrically insulated.
32. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 31, it is characterized in that, described each this pixel electrode has at least one slit, and each this slit is the top that is across its pairing this top electrode, and by by this pixel electrode of part of this flaw picture element unit that is removed with and pairing this slit, can make this conduction residue and this lead be electrically insulated.
33. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 31 is characterized in that, the described method that removes this pixel electrode of part of this flaw picture element unit comprises that laser removes.
34. the method for repairing and mending of plurality of groups of substrates of thin-film transistor as claimed in claim 31 is characterized in that, described each this thin-film transistor comprises a gate, is coupled to its pairing this and scans distribution; One channel layer is disposed on this gate; One source pole/drain is disposed on this channel layer of this gate top, and is coupled to its pairing this data wiring and this pixel electrode respectively; And an extension electrode is coupled to a side of this source/drain, and this extension electrode is to extend to its pairing this to scan the top of distribution, forms a parasitic capacitance to scan distribution with this, and this method for repairing and mending more comprises:
Remove at least partly this extension electrode in this flaw picture element unit, to change the size of this parasitic capacitance value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100038349A CN100380662C (en) | 2005-01-12 | 2005-01-12 | Thin-film transistor array substrate and mending method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100038349A CN100380662C (en) | 2005-01-12 | 2005-01-12 | Thin-film transistor array substrate and mending method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1632951A true CN1632951A (en) | 2005-06-29 |
| CN100380662C CN100380662C (en) | 2008-04-09 |
Family
ID=34853005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100038349A Active CN100380662C (en) | 2005-01-12 | 2005-01-12 | Thin-film transistor array substrate and mending method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100380662C (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3492582B2 (en) * | 2000-03-03 | 2004-02-03 | Ｎｅｃ液晶テクノロジー株式会社 | Liquid crystal display device and method of manufacturing the same |
| JP4497641B2 (en) * | 2000-03-29 | 2010-07-07 | シャープ株式会社 | Liquid crystal display device and defect repair method thereof |
| JP4049589B2 (en) * | 2002-01-18 | 2008-02-20 | シャープ株式会社 | Substrate for liquid crystal display device, liquid crystal display device including the same, and manufacturing method thereof |
| CN100374941C (en) * | 2003-04-07 | 2008-03-12 | 友达光电股份有限公司 | Picture element structure |
| CN1560899B (en) * | 2004-02-16 | 2010-05-05 | 友达光电股份有限公司 | Thin film transistor array substrate and its repair method |
-
2005
- 2005-01-12 CN CNB2005100038349A patent/CN100380662C/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN100380662C (en) | 2008-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100335958C (en) | IPS type LCD and method for fabricating the same | |
| CN1220909C (en) | Liquid crystal display device and image display unit | |
| US8035768B2 (en) | Liquid crystal display and a defect correcting method for the same | |
| CN1267783C (en) | Liquid crystal display unit | |
| US7551254B2 (en) | Displaying device with predetermined pattern for repairing electrical defects having slit region in TFT controlled electrode in which a first slit therein corresponds to a space separating first and second capacitor electrodes | |
| CN101038410A (en) | Liquid crystal device and electronic apparatus | |
| CN101055361A (en) | Lateral electric field type liquid-crystal display device | |
| CN1932594A (en) | Liquid crystal display and driving method thereof | |
| CN101051642A (en) | Thin film transistor array base board and its repairing method | |
| CN101075054A (en) | Array base plate for liquid-crystal display device and its production | |
| CN1186761C (en) | Active matrix liquid crystal display unit and its driving and manufacturing method | |
| US7576806B2 (en) | Thin film transistor array substrate with pixel area having a slit located between upper capacitance electrodes and method for repairing the same | |
| US7253851B2 (en) | Pixel and method for pixel repair | |
| CN1514294A (en) | Liquid crystal display | |
| CN101030583A (en) | Thin-film transistor array and its repairing method | |
| CN1255702C (en) | In-plane switching liquid crystal display with high aperture ratio | |
| US7330221B2 (en) | Thin film transistor array substrate and repairing method thereof | |
| CN1318908C (en) | Thin film transistor array | |
| US7324183B2 (en) | Thin film transistor array substrate and repairing method thereof | |
| CN1632951A (en) | Thin-film transistor array substrate and mending method thereof | |
| CN1673842A (en) | Image element structure and patching method thereof | |
| CN1920652A (en) | Liquid crystal display device, active component array substrate and testing method thereof | |
| CN1847961A (en) | Display module with repairable electric performance and its repairing method | |
| CN1570742A (en) | Thin film transistor array base plate and patching method thereof | |
| CN1317595C (en) | Thin film transistor array base plate and patching method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |