CN1632946A - Method for making polysilicon high-ohmic resistor of integrated circuit - Google Patents
Method for making polysilicon high-ohmic resistor of integrated circuit Download PDFInfo
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- CN1632946A CN1632946A CN 200310122634 CN200310122634A CN1632946A CN 1632946 A CN1632946 A CN 1632946A CN 200310122634 CN200310122634 CN 200310122634 CN 200310122634 A CN200310122634 A CN 200310122634A CN 1632946 A CN1632946 A CN 1632946A
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- resistance
- polysilicon
- integrated circuit
- high resistant
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Abstract
This invention relates to integration circuit multi-silicon high resistance process method, which comprises the following steps: to prepare proper silicon pads; second to deposit multi-silicon layer on the silicon pad as multi-crystal resistance; third to inject impurity elements into the multi-silicon layer to adjust the resistance rate of multi-silicon high resistance; fourth to etch the multi-crystal resistance to form resistance graph; fifth to increase the temperature of alloy into 435DEG C to 470DEG C and accomplish the alloy contact in the mixture gas of N#-[2]/H#-[2].
Description
Technical field
The present invention relates to a kind of manufacture method of integrated circuit, relate in particular to a kind of manufacture method of integrated circuit polysilicon high resistant resistance.
Background technology
In the manufacturing process of existing large scale integrated circuit, it is the important process that increases integrated level and dwindle the large scale integrated circuit volume that polysilicon high resistance film resistance (number formulary is generally several kilohms) directly is integrated into circuit inside, but, because the resistance of polysilicon high resistance film resistance is difficult to accurately control, the difficult requirement that reaches accurate control on the technology.For this reason, except polysilicon membrane high resistant resistance must being integrated into the large scale integrated circuit in the circuit inside, have to adopt the form of peripheral circuit to realize some specific function for general simulation and hybrid circuit.
Yet, in the existing processes process, mainly study the deposition process of polycrystal film, all want higher requirement for film thickness and pattern; Inject simultaneously and annealing process research and require also very thoroughly, require the CONCENTRATION DISTRIBUTION of the big or small and impurity of assurance polycrystalline particle, to reach the mobility ideal distribution of polysilicon for polysilicon; And the resistance that guarantees polysilicon resistance is stable also strengthening aspect the polysilicon graphics etching monitoring.
But from current polysilicon membrane state of art, because technology controlling and process is difficult to reach requirement, therefore the discreteness of polysilicon resistance film is bigger, especially in the integrated circuit of having relatively high expectations, can not meet the demands for resistance precision, cause qualification rate low and technological fluctuation is big, caused very big loss.
And, temperature for alloy, consider Kirhcndall (Ke Kandaer) effect, the Kirhcndall effect is meant that the solid solubility of contacting metal in semiconductor is different with the solid solubility of semiconductor in metal, cause the transportation of material inhomogeneous during heat treatment, thereby when semiconducting alloy, can cause the cavity to produce.Therefore,,, cause to form good ohmic contact easily like this, cause HPO high-resistance inhomogeneous by causing in temperature controlling drift so take the lower temperature alloy for fear of this Kirhcndall effect.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of integrated circuit polysilicon high resistant resistance, it can accurately control the resistance of polysilicon high resistance film resistance on ic manufacturing process.
The object of the present invention is achieved like this:
A kind of manufacture method of integrated circuit polysilicon high resistant resistance is characterized in may further comprise the steps:
Step 1 is prepared suitable silicon chip;
Step 2, the deposit polysilicon layer is as polycrystalline resistance on silicon chip;
Step 3, implanted dopant element on polysilicon layer is in order to regulate the resistivity of polysilicon high resistant resistance;
Step 4, etching polycrystalline resistance on the polysilicon layer behind the implanted dopant element forms resistance pattern;
Step 5 is brought up between 435 ℃ to 470 ℃ at alloy temperature, and finishes the alloy contact in N2/H2 (nitrogen oxygen mixed gas) atmosphere.
In the manufacture method of above-mentioned integrated circuit polysilicon high resistant resistance, wherein, in described step 2, the thickness of deposit polysilicon layer is 450 microns to 550 microns (um) on the silicon chip.
In the manufacture method of above-mentioned integrated circuit polysilicon high resistant resistance, wherein, in described step 3, the impurity element that injects on polysilicon layer is a phosphonium ion.
In the manufacture method of above-mentioned integrated circuit polysilicon high resistant resistance, wherein, in described step 5, the described time of finishing the alloy contact in N2/H2 (nitrogen oxygen mixed gas) atmosphere is half an hour.
The manufacture method of integrated circuit polysilicon high resistant resistance of the present invention owing to adopted above-mentioned technical scheme, makes it compared with prior art, has tangible advantage and good effect.
1. the present invention is owing to improved alloy technique, general alloy temperature is brought up between 435 ℃ to 470 ℃, thereby reduced the variance of polysilicon resistance film, the precision of polysilicon resistance film and the stability of technology have been guaranteed, make in identical atmosphere and identical time, improved alloy the time ohmic contact level;
2. the present invention has been owing to taked the method for on-line monitoring, thereby guarantees that the resistance of polysilicon resistance film satisfies the circuit requirement of degree of precision, has improved the qualification rate of product;
3. the present invention is by suitably improving alloy temperature, in the stability of precision that has guaranteed polysilicon resistance film and technology, also can control the Kirhcndall effect preferably, promptly both avoid the generation in cavity when semiconducting alloy, prevent that again HPO is high-resistance inhomogeneous.
Description of drawings
Embodiment by following manufacture method to integrated circuit polysilicon high resistant resistance of the present invention can further understand purpose of the present invention, specific structural features and advantage in conjunction with the description of its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 is the structural representation of integrated circuit polysilicon high resistant resistance.
Embodiment
See also shown in Figure 1, this be integrated circuit polysilicon high resistant resistance structural representation, the manufacture method of integrated circuit polysilicon high resistant resistance of the present invention may further comprise the steps:
Step 1 is prepared suitable silicon chip;
Step 2, the deposit polysilicon layer is as polycrystalline resistance on silicon chip, and the thickness of polysilicon layer is 450 microns to 550 microns (um);
Step 3, implanted dopant element on polysilicon layer, the common impurity element that injects is a phosphonium ion, in order to regulate the resistivity of polysilicon high resistant resistance;
Step 4, etching polycrystalline resistance on the polysilicon layer behind the implanted dopant element forms resistance pattern;
Step 5 is brought up to alloy temperature between 435 ℃ to 470 ℃, and carries out the alloy contact in N2/H2 nitrogen oxygen mixed gas atmosphere, and in the present embodiment, the time of finishing the alloy contact in N2/H2 nitrogen oxygen mixed gas atmosphere is half an hour.In sum, the manufacture method of integrated circuit polysilicon high resistant resistance of the present invention, owing to improve the method for making that technology has been set up a kind of new polysilicon resistance, and alloy temperature is brought up between 435 ℃ to 470 ℃, thereby can improve the precision of polysilicon resistance effectively, reduced fabrication error, improved alloy the time ohmic contact level; Simultaneously, owing to taked the method for on-line monitoring, guarantee that the resistance of polysilicon resistance film satisfies the circuit requirement of degree of precision, improved the qualification rate of product, and can control the Kirhcndall effect preferably, thereby can be used in the integrated circuit CSLIC product of communication class special use, therefore very practical.
Claims (4)
1. the manufacture method of an integrated circuit polysilicon high resistant resistance is characterized in that may further comprise the steps:
Step 1 is prepared suitable silicon chip;
Step 2, the deposit polysilicon layer is as polycrystalline resistance on silicon chip;
Step 3, implanted dopant element on polysilicon layer is in order to regulate the resistivity of polysilicon high resistant resistance;
Step 4, etching polycrystalline resistance on the polysilicon layer behind the implanted dopant element forms resistance pattern;
Step 5 is brought up between 435 ℃ to 470 ℃ at alloy temperature, and finishes the alloy contact in nitrogen oxygen mixed gas atmosphere.
2. the manufacture method of integrated circuit polysilicon high resistant resistance as claimed in claim 1 is characterized in that: in described step 2, the thickness of deposit polysilicon layer is 450 microns to 550 microns on the silicon chip.
3. the manufacture method of integrated circuit polysilicon high resistant resistance as claimed in claim 1 is characterized in that: in described step 3, the impurity element that injects on polysilicon layer is a phosphonium ion.
4. the manufacture method of integrated circuit polysilicon high resistant resistance as claimed in claim 1 is characterized in that: in described step 5, the described time of finishing the alloy contact in nitrogen oxygen mixed gas atmosphere is half an hour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101226346A CN100378958C (en) | 2003-12-22 | 2003-12-22 | Method for making polysilicon high-ohmic resistor of integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101226346A CN100378958C (en) | 2003-12-22 | 2003-12-22 | Method for making polysilicon high-ohmic resistor of integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1632946A true CN1632946A (en) | 2005-06-29 |
| CN100378958C CN100378958C (en) | 2008-04-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101226346A Expired - Fee Related CN100378958C (en) | 2003-12-22 | 2003-12-22 | Method for making polysilicon high-ohmic resistor of integrated circuit |
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| CN (1) | CN100378958C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100409415C (en) * | 2005-12-06 | 2008-08-06 | 上海华虹Nec电子有限公司 | Method for using alpha polycrystal silicon in integrated circuit |
| CN101673671B (en) * | 2009-09-22 | 2013-02-27 | 上海宏力半导体制造有限公司 | Method for manufacturing high-resistance resistors |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4602421A (en) * | 1985-04-24 | 1986-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Low noise polycrystalline semiconductor resistors by hydrogen passivation |
| JPH0322562A (en) * | 1989-06-20 | 1991-01-30 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| US5236857A (en) * | 1991-10-30 | 1993-08-17 | Texas Instruments Incorporated | Resistor structure and process |
| JPH05275619A (en) * | 1992-03-24 | 1993-10-22 | Sony Corp | Manufacture of semiconductor device |
| SE504969C2 (en) * | 1995-09-14 | 1997-06-02 | Ericsson Telefon Ab L M | Polysilicon resistor and method for making one |
| US6242314B1 (en) * | 1998-09-28 | 2001-06-05 | Taiwan Semiconductor Manufacturing Company | Method for fabricating a on-chip temperature controller by co-implant polysilicon resistor |
| US6306718B1 (en) * | 2000-04-26 | 2001-10-23 | Dallas Semiconductor Corporation | Method of making polysilicon resistor having adjustable temperature coefficients |
-
2003
- 2003-12-22 CN CNB2003101226346A patent/CN100378958C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100409415C (en) * | 2005-12-06 | 2008-08-06 | 上海华虹Nec电子有限公司 | Method for using alpha polycrystal silicon in integrated circuit |
| CN101673671B (en) * | 2009-09-22 | 2013-02-27 | 上海宏力半导体制造有限公司 | Method for manufacturing high-resistance resistors |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100378958C (en) | 2008-04-02 |
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Granted publication date: 20080402 Termination date: 20151222 |
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