CN1632052A - Luminescent film and its preparation method and use - Google Patents

Luminescent film and its preparation method and use Download PDF

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Publication number
CN1632052A
CN1632052A CN 200410072629 CN200410072629A CN1632052A CN 1632052 A CN1632052 A CN 1632052A CN 200410072629 CN200410072629 CN 200410072629 CN 200410072629 A CN200410072629 A CN 200410072629A CN 1632052 A CN1632052 A CN 1632052A
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China
Prior art keywords
film
electron beam
beam evaporation
light
temperature
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CN 200410072629
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Chinese (zh)
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CN1304527C (en
Inventor
李岚
张晓松
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Tianjin University of Technology
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Tianjin University of Technology
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Publication of CN1304527C publication Critical patent/CN1304527C/en
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Abstract

The invention include a lightening film and its preparing method and application. The chemical formula of lightening film: Y3(1-x-y)(AlzGa(1-z))5O12:Tb3x, A3y, 0.0001<x <=0.3; 0.0001<y<=0.3; 0<=z<=1; A=Ce, Nd, Tm, Pr or mix of the two elements. Its preparing method is: burn the material for making target according to need, use electron beam evaporation coating to grow lightening film on the washed substrate and the time for growth id decided by speed and width of growth, finally place the film into program furnace to be heated to reach 500-700deg.C by the speed of 100deg.C/h, and kept for 2-3h. The lightening film prepared by the invention has average and compact surface without crack, average size of particle, and its width can be controlled, with outstanding lightening performance.

Description

A kind of light-emitting film and preparation method thereof and purposes
[technical field]
The present invention relates to luminous physical material and technique of display, especially a kind of light-emitting film and preparation method thereof and purposes.
[technical background]
The display screen that luminescent material is made plays crucial effect in cathode tube, electroluminescent and field emission display.The display applications of at present luminescenjt powder being made exists many obstacles in Field Emission Display.Because the contact resistance between the particle, cause the specific conductivity of shielding not high.In addition, the sticking power problem between the particle and between particle and the substrate also is difficult to overcome.Simultaneously, the screen surfaces of this method preparation is coarse, and densification and lack of homogeneity cause reflection of light and stability bad easily, and resolving power is also lower.Therefore, the light-emitting film that processability is good becomes an important directions of this area research.
[summary of the invention]
Purpose of the present invention is exactly in order to solve the problems of the prior art, and provides a kind of luminescent properties good light-emitting film, and the preparation method of this light-emitting film and purposes.
The present invention addresses the above problem the technical scheme that is adopted to provide a kind of light-emitting film, it is characterized in that its chemical expression is:
Y 3(1-x-y)(Al zGa (1-z)) 5O 12∶Tb 3x，A 3y
Wherein: 0.0001＜x≤0.3;
0.0001＜y≤0.3；
0≤z≤1；
A=Gd or Ce, Nd, Tm, Pr, or the wherein mixing of any two elements.
The present invention prepares the method for light-emitting film, it is characterized in that may further comprise the steps:
1) raw material is mixed according to stoichiometric ratio and fully grinding, adopt solid state reaction, calcination is 2 hours under 1400-1600 ℃ of high temperature, obtains target material; Target material is through press forming, and through 600-800 ℃ of sintering 2 hours, making diameter was the electron beam evaporation target of 3mm then;
2) adopt the electron beam evaporation deposition system, substrate surface is cleaned after mask hides, be loaded on the swivel mount, put into the reaction chamber of electron beam evaporation deposition system, the electron beam evaporation target is packed in the crucible; Reaction chamber vacuum tightness is extracted into 10 at least -5Torr, heated substrate then, making underlayer temperature is 100-400 ℃; Determine vacuum tightness, base reservoir temperature, open the electron beam gun power supply, evaporate;
3) will put into the temperature programming stove by the film of electron beam evaporation preparation, and be heated to 500-700 ℃ with the temperature of 100 ℃/h, and kept 2-3 hour.
The purposes of light-emitting film of the present invention is characterized in that light-emitting film is applied to the display screen of fabricating yard emission display.
Even, the fine and close nothing cracking in the light-emitting film surface of the present invention's preparation.The film particles size is even, and the thickness of film can be controlled.The luminescent properties of film is good.Use the screen that this light-emitting film makes and not only can overcome the shortcoming of prior art, but also have that thermostability height, venting rate are little, strong adhesion, surface finish advantages of higher.
[embodiment]
The chemical expression of light-emitting film of the present invention is: (in molar ratio)
Y 3(1-x-y)(Al zGa (1-z)) 5O 12∶Tb 3x，A 3y
Wherein: 0.0001＜x≤0.3;
0.0001＜y≤0.3；
0≤z≤1；
A can be Gd or Ce, Nd, Tm, Pr, also can be the wherein combination of any two elements.
Employed raw material among the present invention, selecting purity for use is 99.99% Y 2O 3, Tb 2O 3, Ga 2O 3, Al 2O 3, Gd 2O 3, Ce 2O 3, Nd 2O 3, Tm 2O 3, Pr 2O 3Solvent is water or ethanol.
At this film Y 3 (1-x-y)(Al zGa (1-z)) 5O 12: Tb 3x, A 3yIn the chemical expression, x, y, the numerical value of z also can be in following scope:
0.0001＜x≤0.1；
0.0001＜y≤0.1；
0≤z≤1。
Perhaps x, y, the numerical value of z are in following scope:
0.1＜x≤0.3；
0.1＜y≤0.3；
0≤z≤1。
Reasonable light-emitting film can be expressed as with following chemical expression:
(1)Y 2.88(Al 0.9Ga 0.1) 5O 12∶Tb 0.09，Gd 0.03
(2)Y 2.4(Al 0.6Ga 0.4)5O 12∶Tb 0.3，Gd 0.3
The data that the specific embodiment of light-emitting film can also be pressed in the tabulation are determined:
????X ????Y ????Z ????A＝
????1 ????0.03， ????0.01 ????0.9 ????Gd
????2 ????0.1 ????0.1 ????0.6 ????Gd
????3 ????0.05 ????0.05 ????0.8 Gd and Tm
????4 ????0.2 ????0.2 ????0.7 Tm and Nd
????5 ????0.3 ????0.3 ????0.6 ????Gd
????6 ????0.003 ????0.009 ????0.5 ????Gd
????7 ????0.06 ????0.15 ????0.7 ????Gd
????8 ????0.19 ????0.006 ????0.82 ????Gd
????9 ????0.22 ????0.21 ????0.56 ????Gd
????10 ????0.069 ????0.25 ????0.64 ????Gd
The preparation of light-emitting film of the present invention:
According to stoichiometric ratio, with the Y in the aforementioned light-emitting film Example formulations 2O 3, Tb 2O 3, Ga 2O 3, Al 2O 3, Gd 2O 3Deng mixing, and fully grind, adopt solid state reaction, calcination is 2 hours under 1500 ℃ of high temperature, obtains target material, and target material is through press forming, and through 700 ℃ of sintering 2 hours, making diameter was the electron beam evaporation target of 3mm then.Adopt the electron beam evaporation deposition systems produce, select ito glass, substrate surface is cleaned after mask hides, be loaded on the swivel mount, put into the reaction chamber of electron beam evaporation deposition system, the electron beam evaporation target is packed in the selected crucible as substrate.Reaction chamber vacuum tightness is extracted into 10 -5Torr, heated substrate then, making underlayer temperature is 200 ℃, definite vacuum tightness, temperature in normal range of operation, base reservoir temperature reaches under the prerequisite of preset value, opens the electron beam gun power supply, evaporate.The time of concrete growth, the speed of growth of present embodiment was set at 5 /s by the speed of growth and thickness decision, and the thickness of film is 200nm.The film of electron beam evaporation preparation is put into the temperature programming stove, be heated to 600 ℃ with the temperature of 100 ℃/h, and kept 3 hours.Can obtain even, the fine and close nothing cracking in surface, film particles light-emitting film of uniform size.
The substrate material of light-emitting film can also adopt silicon, sapphire or glass etc. except that adopting ito glass.
When electron beam evaporation prepares film, heated substrate, preferred temperature is 200-300 ℃.

Claims (7)

1. light-emitting film is characterized in that its chemical expression is:
Y 3(1-x-y)(Al zGa (1-z)) 5O 12:Tb 3x，A 3y
Wherein: 0.0001＜x≤0.3;
0.0001＜y≤0.3；
0≤z≤1；
A=Gd or Ce, Nd, Tm, Pr, or the wherein mixing of any two elements.
2. according to the described film of claim 1, it is characterized in that said
0.0001＜x≤0.1；
0.0001＜y≤0.1；
0≤z≤1。
3. according to the described film of claim 1, it is characterized in that said
0.1＜x≤0.3；
0.1＜y≤0.3；
0≤z≤1。
4. according to the described film of claim 3, it is characterized in that its chemical expression is:
Y 2.88(Al 0.9Ga 0.1) 5O 12:Tb 0.09，Gd 0.03
5. according to the described film of claim 2, it is characterized in that chemical expression is:
Y 2.4(Al 0.6Ga 0.4) 5O 12:Tb 0.3，Gd 0.3
6. one kind is exclusively used in the method for preparing claim 1 light-emitting film, it is characterized in that may further comprise the steps:
1) raw material is mixed according to stoichiometric ratio and fully grinding, adopt solid state reaction, calcination is 2 hours under 1400-1600 ℃ of high temperature, obtains target material; Target material is through press forming, and through 600-800 ℃ of sintering 2 hours, making diameter was the electron beam evaporation target of 3mm then;
2) adopt the electron beam evaporation deposition system, substrate surface is cleaned after mask hides, be loaded on the swivel mount, put into the reaction chamber of electron beam evaporation deposition system, the electron beam evaporation target is packed in the crucible; Reaction chamber vacuum tightness is extracted into 10 at least -5Torr, heated substrate then, making underlayer temperature is 100-400 ℃; Determine vacuum tightness, base reservoir temperature, open the electron beam gun power supply, evaporate;
3) will put into the temperature programming stove by the film of electron beam evaporation preparation, and be heated to 500-700 ℃ with the temperature of 100 ℃/h, and kept 2-3 hour.
7. the purposes of claim 1 light-emitting film is characterized in that light-emitting film is applied to the display screen of Field Emission Display.
CNB2004100726293A 2004-11-05 2004-11-05 Luminescent film and its preparation method and use Expired - Fee Related CN1304527C (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
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CN1632052A true CN1632052A (en) 2005-06-29
CN1304527C CN1304527C (en) 2007-03-14

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Cited By (7)

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WO2011022879A1 (en) * 2009-08-26 2011-03-03 海洋王照明科技股份有限公司 Luminescent element, producing method thereof and luminescence method using the same
CN102719252A (en) * 2012-06-12 2012-10-10 北京工业大学 Up-and-down-conversion luminescent high-transmittance amorphous fluoride film and preparation method thereof
CN104093259A (en) * 2008-03-21 2014-10-08 Asml荷兰有限公司 Target material, source, EUV lithographic apparatus and device manufacturing method using same
US9096796B2 (en) 2009-08-26 2015-08-04 Ocean's King Lighting Science & Technology Co., Ltd. Luminescent element, preparation method thereof and luminescence method
US9101035B2 (en) 2009-08-26 2015-08-04 Ocean's King Lighting Science & Technology Co., Ltd. Luminescent element, its preparation method thereof and luminescene method
US9096792B2 (en) 2009-08-26 2015-08-04 Ocean's King Lighting Science & Technology Co., Ltd. Luminescent element including nitride, preparation method thereof and luminescence method
US9102874B2 (en) 2009-08-26 2015-08-11 Ocean's King Lighting Science & Technology Co., Ltd. Luminescent element, preparation method thereof and luminescence method

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104093259A (en) * 2008-03-21 2014-10-08 Asml荷兰有限公司 Target material, source, EUV lithographic apparatus and device manufacturing method using same
CN104093259B (en) * 2008-03-21 2017-01-11 Asml荷兰有限公司 Target material, source, EUV lithographic apparatus and device manufacturing method using same
WO2011022879A1 (en) * 2009-08-26 2011-03-03 海洋王照明科技股份有限公司 Luminescent element, producing method thereof and luminescence method using the same
CN102576651A (en) * 2009-08-26 2012-07-11 海洋王照明科技股份有限公司 Luminescent element, producing method thereof and luminescence method using the same
CN102576651B (en) * 2009-08-26 2015-01-07 海洋王照明科技股份有限公司 Luminescent element, producing method thereof and luminescence method using the same
US9096796B2 (en) 2009-08-26 2015-08-04 Ocean's King Lighting Science & Technology Co., Ltd. Luminescent element, preparation method thereof and luminescence method
US9096799B2 (en) 2009-08-26 2015-08-04 Ocean's King Lighting Science & Technology Co., Ltd. Luminescent element, preparation method thereof and luminescence method
US9101035B2 (en) 2009-08-26 2015-08-04 Ocean's King Lighting Science & Technology Co., Ltd. Luminescent element, its preparation method thereof and luminescene method
US9096792B2 (en) 2009-08-26 2015-08-04 Ocean's King Lighting Science & Technology Co., Ltd. Luminescent element including nitride, preparation method thereof and luminescence method
US9102874B2 (en) 2009-08-26 2015-08-11 Ocean's King Lighting Science & Technology Co., Ltd. Luminescent element, preparation method thereof and luminescence method
CN102719252A (en) * 2012-06-12 2012-10-10 北京工业大学 Up-and-down-conversion luminescent high-transmittance amorphous fluoride film and preparation method thereof

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